A spraying device for wafer scribing equipment and wafer scribing equipment

Abstract

This invention discloses a spraying device and a wafer dicing machine for use in semiconductor manufacturing technology. The spraying device includes: a spray pipe with a first flow channel formed inside and at least one spray nozzle at its bottom for spraying a chemical liquid toward the wafer surface; an adsorption layer made of porous capillary material, having a cylindrical structure and concentrically fitted around the outside of the spray pipe; and a protective layer concentrically fitted around the outside of the adsorption layer and covering the upper region of the adsorption layer, with a gap between the bottom end of the protective layer and the bottom end face of the adsorption layer to form an annular liquid collection cavity between the protective layer and the adsorption layer; a negative pressure channel is formed on at least one of the outer wall of the spray pipe, the inner wall of the adsorption layer, and the inner wall of the protective layer, the negative pressure channel communicating with the annular liquid collection cavity and used to connect to a negative pressure source; wherein the adsorption layer adsorbs residual droplets on its exposed adsorption surface through its porous capillary structure.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and in particular to a spray device and a wafer dicing device for a wafer dicing equipment. Background Technology

[0002] In semiconductor wafer dicing manufacturing, processes such as spray cleaning and developing typically rely on spray devices to precisely spray chemical solutions. During dicing operations, the spray device needs to form a uniform liquid film on the wafer surface to achieve functions such as cooling, lubrication, and chip removal; in non-operational states, it must prevent residual droplets from contaminating the cleaned wafer surface. With the increase in wafer size and the increasing requirements for dicing precision, higher demands are placed on the anti-splash performance and cleanliness control of the spray device.

[0003] Existing spray systems are mostly made of metal or plastic, and droplets easily form at the bottom of the spray head due to surface tension. Analysis shows that the residual droplets mainly originate from three sources: first, splash water formed by the rebound of chemical liquid after impacting the wafer surface during spraying; second, evaporation and condensation on the surface of the spray system caused by changes in ambient temperature and humidity; and third, splash water from the high-speed rotation of the dicing blades. These droplets accumulate on the outer surface of the spray system and around the nozzles. When the accumulation reaches a critical value, the droplets will fall freely onto the wafer surface, causing secondary contamination and directly affecting the yield of the patterned areas on the wafer.

[0004] To address the aforementioned issues, existing anti-splash solutions mostly employ passive shielding structures, such as placing a drip tray or protective cover below the spray device to collect dripping droplets through physical obstruction. However, these solutions have significant technical limitations: passive shielding structures have a slow response time, cannot remove residual water already adhering to the outer surface of the spray device, and are prone to creating dead zones. Furthermore, metal spray heads are susceptible to corrosion under prolonged contact with chemical solutions, potentially introducing ionic contamination risks and failing to meet the stringent cleanliness requirements of semiconductor manufacturing.

[0005] It is particularly important to note that the contamination problems arising from wafer dicing are far more complex and severe than conventional "droplet splashing." During the dicing process, the dicing blade rotates at high speeds of tens of thousands of revolutions per minute, generating not only conventional water splashes but also complex aerosols containing silicon powder and cutting chips. Simultaneously, ultrapure water or chemical liquids generate significant electrostatic effects during high-speed jetting and impact, causing a large number of micron- and submicron-sized droplets to become charged and suspended around the device. The coexistence of these contaminants from multiple sources and in various forms (droplets, liquid films, and charged aerosols) under extreme conditions of "high linear velocity (blade speed > 50 m / s), high cleanliness (particle size < 0.1 μm), and complex interfacial forces (surface tension, electrostatic force, capillary coupling)" makes their removal far more difficult than simple anti-splashing problems in general industrial scenarios. Simply relying on passive shielding structures is insufficient to address the complex liquid films already adhering to the device surface.

[0006] Therefore, how to achieve active and efficient removal of residual water on the surface of the spraying device without affecting the accuracy of the spraying operation, and avoid secondary pollution, has become a technical problem that urgently needs to be solved in this field. Summary of the Invention

[0007] In view of this, embodiments of this application provide a spraying device and a wafer dicing device for a wafer dicing equipment, so as to at least partially solve the above-mentioned problems.

[0008] According to a first aspect of the embodiments of this application, a spraying device for a wafer dicing equipment is provided, applied in a wafer processing equipment, comprising:

[0009] The spray pipe has a first flow channel inside and at least one spray nozzle at the bottom for spraying chemical liquid toward the wafer surface.

[0010] The adsorption layer is made of porous capillary material, has a cylindrical structure, and is concentrically fitted on the outside of the spray pipe.

[0011] A protective layer is concentrically fitted outside the adsorption layer and covers the upper region of the adsorption layer. There is a gap between the bottom end of the protective layer and the bottom end face of the adsorption layer to form an annular liquid collection cavity between the protective layer and the adsorption layer.

[0012] At least one of the outer wall of the spray pipe, the inner wall of the adsorption layer, and the inner wall of the protective layer is provided with a negative pressure channel, which is connected to the annular liquid collection chamber and used to connect to a negative pressure source.

[0013] The adsorption layer adsorbs residual droplets on its exposed adsorption surface through its porous capillary structure, and the negative pressure source forms a negative pressure in the annular liquid collection cavity through a negative pressure channel to remove the residual droplets adsorbed by the adsorption layer.

[0014] In some embodiments, the adsorption layer is made of sintered quartz stone with a porosity of 30%-50% and a pore size of 0.1-10 micrometers.

[0015] In some embodiments, the uncovered area of ​​the adsorption layer accounts for 1 / 5 to 1 / 3 of the total height of the adsorption layer.

[0016] In some embodiments, the protective layer and the spray pipe are made of metal and are electrically connected to the negative pressure source to apply electrostatic adsorption force to the adsorption layer while applying negative pressure.

[0017] In some embodiments, the outer periphery of the spray pipe is provided with a plurality of spray nozzles extending radially and spaced apart along the axial direction of the spray pipe; the length of the spray nozzle is less than or equal to the wall thickness of the adsorption layer, such that the outer port of the spray nozzle is at most flush with the outer peripheral wall of the adsorption layer.

[0018] In some embodiments, the inner wall of the spray pipe is provided with a flexible membrane with a through self-sealing slit. The self-sealing slit matches the spray nozzle and is configured such that: when the pressure in the first flow channel of the spray pipe is at a first threshold, the self-sealing slit is normally closed; when the pressure in the first flow channel rises to a second threshold, the self-sealing slit elastically opens to allow the chemical liquid to spray out.

[0019] In some embodiments, the flexible membrane is made of fluororubber or perfluoroether rubber, and the number of self-sealing slits is multiple, with each self-sealing slit being concentrically arranged with one of the spray nozzles.

[0020] In some embodiments, the bottom surface of the adsorption layer is a porous capillary structure with a surface roughness Ra greater than that of the spray pipe and / or the protective layer, so as to enhance the adsorption and spreading ability of droplets.

[0021] According to a second aspect of the embodiments of this application, a wafer dicing apparatus is provided, comprising:

[0022] A dicing stage is used to hold and hold the wafers.

[0023] The dicing spindle has a dicing tool mounted at its end for dicing wafers;

[0024] It also includes at least one spraying device as described above, which is disposed on the moving path of the wafer or between the dicing table and the dicing spindle, for spraying moisture and preventing splashing on the wafer surface.

[0025] In some embodiments, the spraying device is disposed on the wafer inlet side and / or outlet side of the wafer dicing equipment to prevent splashed water or condensate from the dicing area from dripping onto the wafer surface when the wafer enters or leaves the dicing operation area.

[0026] According to a third aspect of the embodiments of this application, a method of using the above-described spray device is provided, comprising the following steps:

[0027] During the spraying operation, high-pressure chemical liquid is introduced into the spray pipe to open the self-sealing slit at the spray nozzle and spray the chemical liquid onto the wafer surface.

[0028] After the spraying stops, the self-sealing slit automatically closes under the elasticity of the material, sealing the spray nozzle;

[0029] Start the negative pressure source connected to the negative pressure channel to create negative pressure in the annular liquid collection chamber;

[0030] The porous capillary structure at the bottom of the adsorption layer is used to adsorb droplets that remain at the bottom of the spray device due to condensation or splashing.

[0031] Under the action of capillary action and negative pressure suction, the adsorbed droplets are extracted and discharged through the porous structure of the adsorption layer and the annular liquid collection cavity.

[0032] In some embodiments, while activating the negative pressure source, an electrostatic adsorption voltage is applied to the protective layer and spray pipe made of metallic material to further enhance the adsorption and guiding ability of residual droplets.

[0033] The beneficial effects of this invention include: This invention proposes a systematic solution to the complex multiphase contamination problems (dust-containing droplets, charged micron-sized aerosols, and condensate films) unique to the wafer dicing process. By setting up an adsorption layer made of porous capillary material, residual droplets accumulated through splashing, condensation, and other methods are actively adsorbed. Combined with a hydrodynamically optimized annular collection chamber and negative pressure channel, liquid contaminants are completely removed under the dual action of capillary action and "surface suction" negative pressure. More importantly, by introducing an electrostatic auxiliary mechanism deeply coupled with process characteristics, the active capture of charged micron-sized aerosols generated during the dicing process is achieved. Comparative tests show that the device of this invention has a capture rate of over 85% for micron-sized aerosols (particle size 0.3-1.0 μm), and after 24 hours of continuous operation, fewer than 5 new particles (≥0.1 μm) are added to the wafer surface, significantly improving the yield of wafer manufacturing. Attached Figure Description

[0034] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings.

[0035] Figure 1 This is an axial cross-sectional view of a spraying device provided in an embodiment of the present invention;

[0036] Figure 2 yes Figure 1 Sectional view of AA;

[0037] Figure 3 This is a schematic diagram illustrating the principle of electrostatic assisted adsorption corresponding to the spraying device of the present invention.

[0038] Figure 4 This is a partially enlarged cross-sectional schematic diagram of the spray pipe and flexible membrane provided in an embodiment of the present invention;

[0039] Figure 5 This is a schematic diagram of a wafer dicing apparatus provided in an embodiment of the present invention. Detailed Implementation

[0040] To enable those skilled in the art to better understand the technical solutions in the embodiments of this application, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art should fall within the protection scope of the embodiments of this application.

[0041] The terminology used in this application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The singular forms “a,” “the,” and “the” used in this application and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the term “and / or” as used herein refers to and includes any or all possible combinations of one or more of the associated listed items.

[0042] It should be understood that although the terms "first," "second," "third," etc., may be used in this application to describe various information, this information should not be limited to these terms. These terms are only used to distinguish information of the same type from one another. For example, without departing from the scope of this application, first information may also be referred to as second information, and similarly, second information may also be referred to as first information. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0043] Example 1: Figure 1 This is an axial cross-sectional view of a spraying device 100 provided in an embodiment of the present invention. Figure 1 The overall structure of a preferred embodiment of the spray device 100 of the present invention is shown. For example... Figure 1 As shown, the spraying device 100 mainly includes three concentric core components: spray pipe 10, adsorption layer 20 and protective layer 30.

[0044] Specifically, the spray pipe 10, as the central component of the device, is typically made of a metallic material (such as corrosion-resistant 316L stainless steel) or a high-strength engineering plastic. A first flow channel 11 is formed axially inside the spray pipe 10 for conveying the chemical liquid. At least one spray nozzle 12 is provided at the bottom end of the spray pipe 10 (i.e., the working end facing the wafer W). Preferably, there are multiple spray nozzles 12, which can be arranged at intervals along the circumference and / or axial direction of the spray pipe 10 to achieve uniform spray coverage of the wafer W surface. The aperture and distribution angle of the spray nozzles 12 can be designed according to specific process requirements.

[0045] The adsorption layer 20 is the core component for achieving the active anti-drip and splash function of this invention. The adsorption layer 20 is made of porous capillary material, such as high-purity, highly corrosion-resistant sintered quartz sand or ceramic.

[0046] Sintered quartz was chosen as the preferred material primarily based on the following considerations: First, sintered quartz exhibits excellent chemical corrosion resistance, withstanding strong acids, strong alkalis, and organic solvents. It does not release metal ion contamination during long-term use, meeting the high cleanliness requirements of semiconductor manufacturing. Second, its porous structure can be precisely controlled through the sintering process to achieve a porosity of 30%-50% and a pore size of 0.1-10 micrometers. This parameter range has been theoretically calculated and experimentally verified: if the porosity is too low (<30%) or the pore size is too small (<0.1μm), although the capillary adsorption force is strong, the liquid conduction resistance increases, leading to a decrease in suction efficiency. If the porosity is too high (>50%) or the pore size is too large (>10μm), the capillary force is insufficient, failing to effectively capture tiny droplets. Therefore, a porosity of 30%-50% and a pore size of 0.1-10μm achieve the optimal balance between capillary adsorption force and liquid conduction rate, ensuring efficient adsorption and rapid extraction.

[0047] The adsorption layer 20 has a cylindrical structure and is concentrically fitted onto the outside of the spray pipe 10. The porous structure of the adsorption layer 20 gives it strong capillary adsorption force, enabling it to actively adsorb residual droplets that come into contact with its exposed surface (especially the bottom surface 21). To obtain the best adsorption effect, in this embodiment, the porosity of the adsorption layer 20 is controlled between 30% and 50%, and the average pore size is preferably 0.1-10 micrometers. This microstructure ensures sufficient capillary force while also providing a smooth channel for subsequent liquid conduction.

[0048] The protective layer 30, also made of metal (such as stainless steel) or corrosion-resistant hard plastic, is concentrically fitted onto the outside of the adsorption layer 20. The protective layer 30 serves two main functions: first, to provide mechanical protection for the relatively fragile internal structure of the adsorption layer 20, preventing damage from impacts during installation or use; and second, to cooperate with the adsorption layer 20 to form a specific fluid channel. The protective layer 30 covers the upper region of the adsorption layer 20, while maintaining a certain vertical distance between the bottom end 31 of the protective layer 30 and the bottom end face 21 of the adsorption layer 20. This spacing design creates an annular cavity, namely the annular liquid collection chamber 40, between the inner wall of the protective layer 30 and the outer wall of the adsorption layer 20.

[0049] To facilitate the active discharge of residual liquid, the spray device 100 is also equipped with a negative pressure channel 50, such as... Figure 2As shown. The inlet of the negative pressure channel 50 is located on at least one of the outer wall of the spray pipe 10, the inner wall of the adsorption layer 20, or the inner wall of the protective layer 30, and maintains fluid communication with the annular liquid collection chamber 40. The outlet of the negative pressure channel 50 is used to connect to an external negative pressure source (such as a vacuum pump, not shown in the figure). In a preferred embodiment, the negative pressure channel 50 can be integrated into the wall of the protective layer 30, with one end opening onto the inner wall surface of the protective layer 30 and communicating with the annular liquid collection chamber 40, and the other end connected to the negative pressure source through a pipeline.

[0050] Based on the above structure, the working principle of the spray device 100 in this embodiment is as follows:

[0051] During the spraying operation, the high-pressure chemical liquid is sprayed at high speed from the spray nozzle 12 through the first flow channel 11 of the spray pipe 10, and acts on the surface of the wafer W below to achieve functions such as cooling, lubrication or cleaning.

[0052] When the spraying operation stops, the spray nozzle 12 no longer sprays liquid. At this time, the rebound water mist (splash water) generated by the chemical liquid hitting the surface of the wafer W during the spraying process, as well as the condensate on the surface of the spray pipe 10, adsorption layer 20, or protective layer 30 caused by the temperature difference between the inside and outside of the device, will gradually accumulate. Since the bottom end face 21 of the adsorption layer 20 is exposed and has a high roughness and porous capillary structure, once these residual droplets come into contact with the bottom end face 21 of the adsorption layer 20 or other exposed areas, they will be immediately drawn into its internal microporous network by strong capillary force.

[0053] Simultaneously, a negative pressure source connected to the negative pressure channel 50 is activated, generating a continuous negative pressure within the annular collection chamber 40. This negative pressure environment acts as a powerful "suction pump," affecting the entire outer periphery of the adsorption layer 20. Liquid drawn into the adsorption layer 20 by capillary action, driven by the negative pressure, permeates and converges along the porous structure of the adsorption layer 20 towards the annular collection chamber 40, such as... Figure 2 As shown, the approximate flow path of the liquid along the negative pressure channel 50 under negative pressure is indicated by a red dashed line. Ultimately, the liquid is drawn out of the adsorption layer 20, enters the annular collection chamber 40, and is completely discharged from the outside of the spray device via the negative pressure channel 50, flowing into the factory's waste liquid recovery system.

[0054] As can be seen, this invention achieves active, efficient and thorough removal of residual liquid on the surface of the spray device through the synergistic effect of "capillary adsorption" and "negative pressure suction", fundamentally avoiding the accumulation of droplets to a critical weight and their free fall onto the wafer W surface, thereby eliminating the risk of secondary pollution.

[0055] It is important to note that the technical problem addressed by this invention is not simply "preventing droplets from falling," but rather the complex and multi-source contamination problem unique to semiconductor dicing processes. During wafer dicing, the dicing blade rotates at high speeds of tens of thousands of revolutions per minute, generating not only conventional splashing water but also complex aerosols containing silicon powder and cutting chips. Simultaneously, ultrapure water generates significant electrostatic effects during high-speed jetting and impact, causing tiny droplets to become charged and adhere to the device surface. Furthermore, temperature and humidity fluctuations in the process environment can form condensate films on the device surface. The coexistence of these contaminants from multiple sources and in various forms (droplets, liquid films, charged aerosols) under extreme conditions of "high linear velocity (blade linear velocity > 50 m / s), high cleanliness (requiring particles < 0.1 μm), and complex interfacial forces (surface tension, electrostatic force, capillary coupling)" makes their removal far more difficult than simple splash prevention in general industrial scenarios. Negative pressure adsorption alone can only act on the inside of the spray nozzle and is ineffective against charged micron-sized aerosols accumulated on the outer wall of the device; while passive shielding structures are even less capable of dealing with the complex liquid films already attached to the device surface. Therefore, the technical solution proposed in this invention is designed specifically to address this unique technical challenge of semiconductor dicing processes.

[0056] Example 2: This example is a further optimization based on Example 1. In order to maximize the adsorption efficiency of the adsorption layer 20 and ensure smooth liquid conduction, the geometric dimensions and surface characteristics of the adsorption layer 20 were limited.

[0057] Preferably, such as Figure 2 As shown, the area of ​​the adsorption layer 20 covered by the protective layer 30 is the upper region, while its lower region (near the bottom) remains exposed, forming an exposed adsorption surface. The height h of this exposed adsorption surface should be controlled between 1 / 5 and 1 / 3 of the total height H of the adsorption layer 20. Experiments have verified that this ratio range achieves the best overall effect: if the exposed area is too small, the adsorption area is insufficient, and it cannot effectively capture all residual droplets; if the exposed area is too large, although the adsorption area increases, the adsorbed liquid may quickly seep to the bottom under gravity and not be drawn away by the lateral negative pressure in time, thus increasing the risk of dripping. By controlling the exposed ratio within the above range, it can be ensured that the adsorption layer 20 has sufficient surface area to capture droplets, and that the liquid is preferentially guided to the annular collection chamber 40 by the lateral negative pressure before reaching the bottom of the adsorption layer 20.

[0058] Furthermore, to enhance the droplet capture capability, the bottom surface 21 of the adsorption layer 20 undergoes special treatment, making its surface roughness Ra much greater than that of the spray pipe 10 and / or the protective layer 30. For example, sandblasting, etching, or directly utilizing the natural rough surface of the sintered material can be employed. This high-roughness surface effectively disrupts the surface tension of the droplets, promoting rapid spread of the droplets on the bottom surface 21, thereby facilitating their absorption into the capillary channels within the adsorption layer 20. This optimized design, addressing the splashed water and condensate film during the scribing process, ensures that the adsorption layer can rapidly capture and remove liquid contaminants, laying the foundation for treating more complex charged electrosols.

[0059] Example 3: This example, based on Example 1 or 2, introduces an electrostatic assisted adsorption mechanism to further enhance the removal effect on fine floating liquid mist. This mechanism is not a simple functional superposition, but rather utilizes the characteristic that contaminants are easily charged during the wafer dicing process to achieve enhanced adsorption deeply coupled with the process.

[0060] Figure 3 This is a schematic diagram illustrating the principle of electrostatic assisted adsorption corresponding to the spray device 100 of the present invention. In this embodiment, both the protective layer 30 and the spray pipe 10 are made of a metallic material with good electrical conductivity, and both are electrically connected to a negative voltage source. Furthermore, an optional DC high-voltage power supply is electrically connected to both the protective layer 30 and the spray pipe 10. The adsorption layer 20 itself, as a porous insulating or semi-insulating material, is sandwiched between the two.

[0061] Simultaneously with the activation of the negative pressure source, a voltage is applied to the DC high-voltage power supply, creating a potential difference between the spray pipe 10 and the protective layer 30, thereby establishing an electrostatic field within and around the adsorption layer 20. Since residual droplets, especially tiny condensed water mists, typically carry a weak charge or are easily polarized by the electric field, this electrostatic field exerts a directional electrostatic attraction force on the droplets, guiding them towards the adsorption layer 20, which has a high dielectric constant or ground potential. This electrostatic guiding effect, combined with the suction effect of the negative pressure, significantly improves the capture efficiency of tiny floating liquid mists, especially for droplets that have not yet contacted the surface of the adsorption layer 20 and are floating near the device, achieving active "capture."

[0062] Meanwhile, the spray pipe 10 and the protective layer 30 are grounded, which can prevent discharge phenomena that may be caused by static electricity accumulation, ensure that the equipment operates under a safe voltage, and meet the strict requirements for static electricity discharge in the semiconductor manufacturing environment.

[0063] It should be noted that the electrostatic adsorption mechanism in this embodiment is not simply a superposition of electrostatic functions onto an existing structure, but rather utilizes the deep coupling between the dielectric properties of the adsorption layer 20 as a porous material and the electrostatic field. Because the adsorption layer 20 (such as sintered quartz) has a specific dielectric constant and pore structure, the electric field applied between the spray pipe 10 and the protective layer 30 creates a non-uniform electric field distribution within and around the micropores of the adsorption layer 20. This non-uniform electric field generates a dielectric force on the charged micron-sized aerosol particles generated during the cutting process, actively capturing and guiding them to the pore walls of the adsorption layer 20, thus achieving "active capture" rather than "passive contact." This synergistic effect of the physical mechanism enables the device to effectively remove suspended aerosol particles with a diameter less than 1 μm, which is impossible with single negative pressure adsorption or single electrostatic dust removal technologies.

[0064] To verify the actual effectiveness of the electrostatic assist mechanism, a comparative experiment was conducted: under the same conditions, the electrostatic assist function was enabled and disabled respectively, and the capture efficiency of floating particles (0.3-1.0 μm in diameter) was measured. The results showed that after enabling electrostatic assist, the capture efficiency increased from approximately 60% without electrostatics to over 85%, and the directional attraction of charged particles significantly reduced the random adhesion of particles to the device surface. Furthermore, electric field simulation confirmed that after applying a voltage between the spray pipe and the protective layer, the non-uniform electric field strength formed inside and around the adsorption layer was sufficient to generate dielectric force on micron-sized charged droplets, with its effective range covering the entire exposed area of ​​the adsorption layer, thereby achieving active capture of floating aerosols.

[0065] Example 4: This example improves the spray pipe 10 and its related structures to prevent residue and leakage from the spray nozzle 12 at the source, achieving good synergy between spraying and anti-drip / splashing functions. This internal sealing mechanism, together with the external adsorption layer's cleaning mechanism, constitutes a complete, interconnected protection system.

[0066] Figure 4This is a partially enlarged cross-sectional view of a spray pipe and flexible membrane provided in an embodiment of the present invention. In this embodiment, a plurality of radially extending spray nozzles 12 are formed on the wall of the spray pipe 10, and these spray nozzles 12 are spaced apart along the axial direction of the spray pipe 10. A key design feature is that the radial depth of each spray nozzle 12 (i.e., the wall thickness of the spray pipe 10 at that location) is designed to be less than or equal to the wall thickness of the adsorption layer 20. This means that when all components are concentrically assembled, the outer port 121 of the spray nozzle 12 is at most flush with the outer peripheral wall of the adsorption layer 20, and may even be slightly recessed inward. This design ensures that the liquid sprayed from the spray nozzle 12 can directly act on the wafer W, and even if a very small amount of liquid remains at the edge of the nozzle after spraying stops, the residue point is located within the outer peripheral wall of the adsorption layer 20, making it easier for it to be captured by the capillary structure of the adsorption layer 20, and thus not directly exposed to the external space to form a dripping risk.

[0067] Furthermore, to completely eliminate leakage of the spray nozzles 12 when not in operation, this embodiment attaches or coats a flexible membrane 60 to the inner wall of the spray pipe 10. This flexible membrane 60 is made of a material with good elasticity, chemical resistance, and low gas release, such as fluororubber (FKM) or perfluoroether rubber (FFKM). A through-hole self-sealing slit 61 is provided on the flexible membrane 60, corresponding to the position of each spray nozzle 12. This self-sealing slit 61 can be in the shape of an "I," a cross, or a "Y," and its size is slightly smaller than the inner port 122 of the spray nozzle 12.

[0068] In this invention, the self-sealing notch 61 is configured as a pressure-driven dynamic valve: when the pressure in the first flow channel 11 within the spray pipe 10 is at a first threshold (e.g., atmospheric pressure or extremely low static liquid column pressure), the self-sealing notch 61 is tightly closed under the elastic restoring force of the material itself, thereby sealing the spray nozzle 12 and effectively preventing the evaporation or seepage of residual chemical liquid in the first flow channel 11. Figure 4 As shown in (a); when the spraying operation begins, the pressure in the first flow channel 11 is increased to the second threshold (i.e., the set spraying working pressure) by the external liquid supply system. The high-pressure chemical liquid overcomes the elastic force of the flexible membrane 60, forcing the self-sealing slit 61 to open elastically, forming a smooth spraying channel, allowing the chemical liquid to spray out, as shown in (a). Figure 4 As shown in (b) in the figure. When the spraying stops and the pressure drops back to the first threshold, the self-sealing slit 61 automatically resets and closes under the action of elasticity.

[0069] Through the above design, a normally closed seal is achieved for the spray nozzle 12, completely locking the liquid inside the spray pipe 10 and eliminating residue and leakage at the nozzle from the source. This internal sealing mechanism, together with the cleaning mechanism of the external adsorption layer 20, forms a dual protection system that works in conjunction with the external system.

[0070] It should be noted that the internal and external linkage protection mechanism in this embodiment is a highly integrated closed-loop system.

[0071] First, the annular collection cavity 40 between the protective layer 30 and the adsorption layer 20 is not a simple void, but a precisely calculated fluid dynamic boundary. Specifically, the inlet position, number, and opening direction of the negative pressure channels 50 are optimized to ensure a uniform negative pressure distribution within the annular collection cavity 40. Through computational fluid dynamics (CFD) simulation analysis, symmetrically arranging the negative pressure channels 50 around the circumference of the protective layer 30, with their openings facing the tangential direction of the annular collection cavity 40, induces a swirling effect, promoting liquid convergence towards the channel openings and avoiding suction dead zones caused by excessively low local negative pressure. Furthermore, the gap width of the annular collection cavity 40 (i.e., the radial distance between the inner wall of the protective layer 30 and the outer wall of the adsorption layer 20) is matched with the wall thickness and porosity of the adsorption layer 20, allowing the negative pressure to effectively penetrate the entire wall thickness of the adsorption layer 20, forming a pressure gradient from the inner wall to the outer wall, driving directional liquid flow. This design achieves a transformation from traditional "point suction" to "area suction," significantly improving suction efficiency and uniformity.

[0072] The gap size of the annular liquid collection cavity 40 (i.e., the radial distance between the inner wall of the protective layer 30 and the outer wall of the adsorption layer 20) is matched with the wall thickness and porosity of the adsorption layer 20, so that the negative pressure introduced by the negative pressure channel 50 can form a uniform negative pressure field in the annular liquid collection cavity 40, thereby acting on the entire outer peripheral wall of the adsorption layer 20, realizing "surface suction" rather than the "point suction" of traditional technology. This uniform negative pressure field is coupled with the capillary structure of the adsorption layer 20, so that liquid can be efficiently drawn from the exposed adsorption surface of the adsorption layer 20 to the annular liquid collection cavity 40 and discharged.

[0073] Secondly, the normally closed design of the self-sealing cut 61 and the external adsorption mechanism of the adsorption layer 20 form a time-sequential synergy: after the spraying stops, the self-sealing cut 61 immediately closes, blocking the seepage of internal chemical liquid; at the same time, the external adsorption layer 20 starts to work, removing residual droplets that already exist on the outside.

[0074] These two elements form a complete, interlocking protection system, ensuring effective removal of droplets regardless of whether they originate from internal leakage or external accumulation. In particular, the external adsorption layer, combined with an electrostatic assist mechanism, can actively capture suspended electrosols generated during the dicing process. This systematic, synergistic design is far more than a simple aggregation of multiple independent functions; it represents an integrated solution to the complex contamination problems inherent in semiconductor dicing processes.

[0075] Example 5: This example provides a wafer dicing device 1000 that includes any of the aforementioned spray devices 100.

[0076] Figure 5This is a schematic diagram of a wafer dicing apparatus 1000 provided in an embodiment of the present invention. The wafer dicing apparatus 1000 mainly includes:

[0077] The dicing stage 200 is used to support and fix the wafer W to be processed by vacuum adsorption or mechanical clamping.

[0078] The dicing spindle 300 has a high-speed rotating dicing tool (such as a diamond blade) mounted at its end for dicing and separating the wafer W.

[0079] X / Y / Z precision motion platform (not shown in the figure) is used to realize the relative motion between wafer W and dicing tool;

[0080] And at least one spraying device 100 as described above.

[0081] The spray device 100 can be positioned along the movement path of the wafer W, for example, at the location where the wafer W enters or exits the dicing work area. In this embodiment, two spray devices 100 are respectively positioned at the wafer inlet side 400 and the wafer outlet side 500 of the wafer dicing equipment. When the wafer W is removed from the clean wafer cassette by the robotic arm and is ready to enter the dicing work area, the spray device 100 located at the wafer inlet side 400 can pre-spray the surface of the wafer W to form a uniform protective liquid film; at the same time, the device's own anti-drip function ensures that in standby mode, no condensate or residual droplets will contaminate the clean wafer W that is about to enter. When the wafer W completes dicing and is transferred from the work area to the cleaning treatment area, the spray device 100 located at the wafer outlet side 500 can moisturize the wafer that has completed the cleaning treatment, and similarly prevent the dust-laden water spray mist that permeates the dicing area from spreading out when the equipment door is opened and contaminating the surface of the diced wafer W.

[0082] In this invention, the wafer dicing equipment 1000 further includes a first handling robot 610, which is responsible for transferring the wafer from the position detection stage 700 to the dicing worktable 200. The position detection stage 700 is located on the wafer entry side 400 so that the external robot can directly transport the wafer to the position detection stage 700. The dicing worktable 200 can move laterally between the two dicing spindles 300 to perform dicing on the wafer.

[0083] The wafer dicing equipment 1000 also includes a back cleaning station 900 and a second transport robot 620. The second transport robot 620 is responsible for grabbing the wafers on the dicing worktable 200 that has moved back to its original position and transferring them to the back cleaning station 900. The back cleaning assembly 800 is located on the side of the back cleaning station 900 and is used for cleaning the back of the wafers. After the back cleaning is completed, the wafers are transferred from the wafer exit side 500 to the next process.

[0084] Furthermore, the spray device 100 can also be installed between the dicing worktable 200 and the dicing spindle 300, directly providing close-range, high-precision spray cooling to the dicing area. Its active anti-splashing feature ensures that no liquid droplets fall onto the worktable or the conveying mechanism below during wafer replacement or equipment debugging. Integrating the spray device of this invention into the wafer dicing equipment constitutes a production system that can comprehensively ensure process cleanliness from the source (internal leakage) to the process (external liquid film, splashed water, electrolytic aerosol).

[0085] Example 6: This example provides a method of using the aforementioned spray device 100, which maximizes the anti-drip and splashing performance of the device. The method includes the following steps:

[0086] S1: Spraying Operation Stage. High-pressure chemical liquid is introduced into the first flow channel 11 of the spray pipe 10. When the pressure inside the flow channel rises to the second threshold, it overcomes the elastic force of the flexible membrane 60, causing the self-sealing slits 61 on it to open elastically. The high-pressure chemical liquid is sprayed onto the surface of the wafer W at a precise angle and flow rate through the opened slits and spray nozzles 12 to complete the cooling, lubrication, or cleaning process.

[0087] S2: Spraying Stop and Internal Sealing Stage. After the spraying operation is completed, the liquid supply to the first flow channel 11 is stopped, and the pressure inside the flow channel drops rapidly to the first threshold. The self-sealing slit 61 automatically closes under the elastic restoring force of its own material, tightly sealing the spray nozzle 12, isolating the inside of the spray pipe 10 from the external environment, and preventing the evaporation or leakage of internal residual liquid.

[0088] S3: External Residue Removal Stage. Immediately upon or after a very short delay following the cessation of spraying, the negative pressure source connected to the negative pressure channel 50 is activated. The negative pressure source generates and maintains a stable negative pressure environment within the annular collection chamber 40.

[0089] S4: Droplet Adsorption Stage. Due to the cessation of the spraying operation, the splashed water generated during the previous spraying process and the condensate generated at the bottom of the device (especially the bottom end face 21 of the spray pipe 10 and the adsorption layer 20) due to temperature and humidity changes begin to accumulate. Once these residual droplets come into contact with or approach the bottom end face 21 of the adsorption layer 20, which has a high surface roughness and porous capillary structure, they are immediately captured by strong capillary forces and drawn into its internal microporous network.

[0090] S5: Liquid Extraction and Discharge Stage. Liquid drawn into the adsorption layer 20 by capillary action is driven by continuous negative pressure within the annular collection chamber 40, permeating and conducting along the porous structure of the adsorption layer 20 towards its outer periphery. The liquid is ultimately extracted from the adsorption layer 20, enters the annular collection chamber 40, and is completely discharged through the connected negative pressure channel 50 into the factory's waste liquid recovery pipeline.

[0091] In a preferred embodiment, an electrostatic adsorption voltage is applied to the protective layer 30 made of metal and the spray pipe 10 simultaneously or after the negative pressure source is activated in step S3. The resulting electrostatic field can further enhance the adsorption force on the tiny liquid mist floating in the air, guiding it to move directionally to the adsorption layer 20 and be captured, thereby achieving better cleanliness control. Especially during the wafer dicing process, this electrostatic-assisted step can actively capture charged micron-sized aerosol particles generated by the high-speed rotation of the cutting tool, which is impossible to achieve with other methods.

[0092] Through the above steps, the method of the present invention achieves active, efficient and thorough removal of residual liquid on the surface of the spraying device and the suspended electrosol unique to the scrubbing process, minimizing the risk of droplet contamination of the wafer and significantly improving the yield of semiconductor manufacturing.

[0093] Comparative experimental data:

[0094] To further verify the technical effects of the present invention, under the same process conditions, the spraying device of the present invention (hereinafter referred to as "the device") was compared with a single negative pressure adsorption spraying device (hereinafter referred to as "comparison device 1") and a passive shielding spraying device (hereinafter referred to as "comparison device 2") in the prior art. The test conditions were: 12-inch wafer dicing process, dicing blade speed 30000 rpm, spray flow rate 500 ml / min, spraying medium was ultrapure water, ambient temperature 22±1℃, and relative humidity 50±5%. The test results are as follows:

[0095]

[0096] The above comparative data fully demonstrate that the device of the present invention achieves significantly better technical results than existing technologies in terms of droplet removal efficiency, micron-sized aerosol capture capability, wafer surface cleanliness maintenance, and maintenance cycle. In particular, for micron-sized aerosols with a particle size of 0.3-1.0 μm, the device achieves a capture rate of over 85%, while existing technologies are essentially unable to capture them effectively. This unexpected technical effect is precisely due to the systematic and synergistic design of the present invention, which employs a combination of "exposed adsorption layer surface designed specifically for the characteristics of the dicing process + surface suction negative pressure + electrostatic adsorption deeply coupled with the process + internal and external linkage sealing," thus solving the complex and multi-source contamination problem unique to semiconductor dicing processes.

[0097] Those skilled in the art will recognize that the units and method steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of the embodiments of this application. The above embodiments are only used to illustrate the embodiments of this application and are not intended to limit the embodiments of this application. Those skilled in the art can make various changes and modifications without departing from the spirit and scope of the embodiments of this application. Therefore, all equivalent technical solutions also fall within the scope of the embodiments of this application, and the patent protection scope of the embodiments of this application should be defined by the claims.

Claims

1. A spray device for a wafer dicing equipment, characterized in that, include: The spray pipe has a first flow channel inside and at least one spray nozzle at the bottom for spraying chemical liquid toward the wafer surface. The adsorption layer is made of porous capillary material, has a cylindrical structure, and is concentrically fitted on the outside of the spray pipe. A protective layer is concentrically fitted outside the adsorption layer and covers the upper region of the adsorption layer. There is a gap between the bottom end of the protective layer and the bottom end face of the adsorption layer to form an annular liquid collection cavity between the protective layer and the adsorption layer. At least one of the outer wall of the spray pipe, the inner wall of the adsorption layer and the inner wall of the protective layer is provided with a negative pressure channel, and the negative pressure channel is connected to the annular liquid collection chamber and is used to connect to a negative pressure source. The adsorption layer adsorbs residual droplets on its exposed adsorption surface through its porous capillary structure, and the negative pressure source forms a negative pressure in the annular liquid collection cavity through a negative pressure channel to remove the residual droplets adsorbed by the adsorption layer.

2. The spraying device according to claim 1, characterized in that, The adsorption layer is made of sintered quartz stone with a porosity of 30%-50% and a pore size of 0.1-10 micrometers.

3. The spraying device according to claim 1, characterized in that, The uncovered area of ​​the adsorption layer accounts for 1 / 5 to 1 / 3 of the total height of the adsorption layer.

4. The spraying device according to claim 1, characterized in that, The protective layer and the spray pipe are made of metal and are electrically connected to the negative pressure source to apply electrostatic adsorption force to the adsorption layer while applying negative pressure.

5. The spraying device according to claim 1, characterized in that, The outer periphery of the spray pipe is provided with a plurality of spray nozzles extending radially, which are spaced apart along the axial direction of the spray pipe; the length of the spray nozzle is less than or equal to the wall thickness of the adsorption layer, such that the outer port of the spray nozzle is at most flush with the outer peripheral wall of the adsorption layer.

6. The spraying device according to claim 5, characterized in that, The inner wall of the spray pipe is provided with a flexible membrane with a through self-sealing slit. The self-sealing slit matches the spray nozzle and is configured such that: when the pressure in the first flow channel of the spray pipe is at a first threshold, the self-sealing slit is normally closed; when the pressure in the first flow channel rises to a second threshold, the self-sealing slit elastically opens to allow the chemical liquid to spray out.

7. The spraying device according to claim 6, characterized in that, The flexible membrane is made of fluororubber or perfluoroether rubber, and there are multiple self-sealing slits, with each self-sealing slit being concentrically arranged with one of the spray nozzles.

8. The spraying device according to claim 1, characterized in that, The bottom surface of the adsorption layer has a porous capillary structure, and its surface roughness Ra is greater than that of the spray pipe and / or the protective layer, so as to enhance the adsorption and spreading ability of droplets.

9. A wafer dicing device, characterized in that, include: A dicing stage is used to hold and hold the wafers. The dicing spindle has a dicing tool mounted at its end for dicing wafers; It also includes at least one spraying device as described in any one of claims 1-8, which is disposed on the moving path of the wafer or between the dicing table and the dicing spindle, for spraying moisture and preventing splashing on the wafer surface.

10. The wafer dicing equipment according to claim 9, characterized in that, The spraying device is installed on the wafer inlet side and / or outlet side of the wafer dicing equipment to prevent splashed water or condensate from the dicing area from dripping onto the wafer surface when the wafer enters or leaves the dicing operation area.

11. A method of using the spraying device according to any one of claims 1-8, characterized in that, Includes the following steps: During the spraying operation, high-pressure chemical liquid is introduced into the spray pipe to open the self-sealing slit at the spray nozzle, and the chemical liquid is sprayed onto the wafer surface. After the spraying stops, the self-sealing slit automatically closes under the elasticity of the material, sealing the spray nozzle; Start the negative pressure source connected to the negative pressure channel to create negative pressure in the annular liquid collection chamber; The porous capillary structure at the bottom of the adsorption layer is used to adsorb droplets that remain at the bottom of the spray device due to condensation or splashing. Under the action of capillary action and negative pressure suction, the adsorbed droplets are extracted and discharged through the porous structure of the adsorption layer and the annular liquid collection cavity.

12. The method of use according to claim 11, characterized in that, While activating the negative pressure source, an electrostatic adsorption voltage is applied to the protective layer and spray pipe made of metal material to further enhance the adsorption and guidance capabilities for residual droplets.

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