Manufacturing system and method for manufacturing quantum hardware
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- GOOGLE LLC
- Filing Date
- 2024-06-07
- Publication Date
- 2026-06-24
Smart Images
Figure 2026520736000001_ABST
Abstract
Claims
1. A system for manufacturing quantum hardware for use in quantum computing systems, At least one measurement chamber operable to accept a workpiece, wherein the workpiece includes a quantum structure associated with the quantum hardware, and the measurement chamber includes at least one detector operable to characterize atomic-scale parameters associated with the surface of the quantum structure, A process chamber operable to receive the workpiece, wherein the at least one process chamber operable to carry out a manufacturing process on the quantum structure, at least partially based on the atomic-scale parameters, A transfer device that is operable to transfer the workpiece between the at least one measurement chamber and the at least one process chamber without exposure to the surroundings, A system equipped with these features.
2. The system according to claim 1, wherein the transfer device includes a vacuum chamber.
3. The system according to claim 1, wherein the transfer device is operable to transfer the workpiece between the at least one measurement chamber and the at least one process chamber under vacuum pressure.
4. The atomic scale parameter is at least about 1 × 10 １４ atoms / cm ３ The system according to claim 1, which is associated with the detection limit of [the specified value].
5. The system according to claim 1, wherein the quantum structure is part of a superconducting qubit.
6. The system according to claim 1, wherein the at least one detector includes a mass spectrometer.
7. The system according to claim 1, wherein the at least one detector includes a residual gas analysis (RGA) detector.
8. The system according to claim 1, wherein the at least one detector includes a secondary ion mass spectrometry (SIMS) detector or an X-ray photoelectron spectroscopy (XPS) detector.
9. The system according to claim 1, wherein the at least one detector is operable to perform a temperature-controlled desorption gas analysis (TDS) measurement.
10. The system according to claim 1, wherein the at least one measurement chamber includes a surface treatment chamber, and the at least one detector is an in-situ detector in the surface treatment chamber.
11. The system according to claim 10, wherein the in-situ detector includes an ellipsometer, an emission spectroscopy (OES) detector, or a residual gas analysis (RGA) detector.
12. The system according to claim 10, wherein the surface treatment chamber includes a plasma base source or an ion beam source.
13. The system according to claim 1, wherein the at least one process chamber includes a surface treatment chamber.
14. The system according to claim 1, wherein the at least one process chamber includes a film deposition chamber.
15. A method for manufacturing quantum hardware for use in quantum computing systems, To provide a workpiece to a measurement chamber, wherein the workpiece includes one or more surfaces related to the quantum structure of the quantum hardware, Characterizing at least one atomic-scale parameter associated with the surface of the quantum structure using at least one detector in the measurement chamber, After characterizing at least one atomic-scale parameter, the workpiece is transferred to a process chamber under vacuum pressure without being exposed to the surroundings. Performing at least one manufacturing process on the surface of the quantum structure in the process chamber, based at least partially on the atomic-scale parameters, Methods that include...
16. The atomic scale parameter is at least about 1 × 10 １４ atoms / cm ３ The method according to claim 15, which is associated with the detection limit of [the specified term].
17. The method according to claim 15, wherein the measurement chamber is a surface treatment chamber having an in-situ detector.
18. The method according to claim 15, wherein the method comprises transferring the workpiece to a surface treatment chamber and performing a surface treatment process before providing the workpiece to the measurement chamber.
19. A system for manufacturing quantum hardware for use in quantum computing systems, An outgassing chamber operable to accept a workpiece having a quantum structure, comprising a first detector operable to monitor one or more organic compounds using mass spectrometry, A material property evaluation chamber comprising a second detector operable to detect atomic-scale parameters, A heat treatment chamber, wherein the heat treatment chamber includes a third detector, and the third detector includes a temperature-controlled desorption gas analysis (TDS) detector, A surface treatment chamber comprising a plasma source or ion beam source operable to perform a surface treatment process on the workpiece, A film deposition chamber and A system comprising: a transfer chamber coupled to the outgassing chamber, the surface treatment chamber, and the material characterization chamber, wherein the transfer chamber is operable to transfer the workpiece between one or more of the outgassing chamber, the material characterization chamber, the heat treatment chamber, the surface treatment chamber, and the film deposition chamber without exposure to the surrounding environment.
20. The system according to claim 19, wherein the surface treatment chamber includes an in-situ detector, and the in-situ detector includes one or more of an ellipsometer, an emission spectroscopic (OES) detector, or a residual gas analysis (RGA) detector.