A dual linear polarized magneto-electric dipole array antenna

By using the multi-layer structure and slot-coupled feeding method of the dual-polarized magnetoelectric dipole array antenna, the problem of excessively high profile of traditional magnetoelectric dipole antennas is solved, realizing the application of low-profile, miniaturized and broadband 5G base station antennas, meeting the high-performance requirements of the n78 and n79 frequency bands.

CN122370749APending Publication Date: 2026-07-10SHENYANG UNIVERSITY OF TECHNOLOGY

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SHENYANG UNIVERSITY OF TECHNOLOGY
Filing Date
2026-05-29
Publication Date
2026-07-10

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Abstract

This invention discloses a dual-polarized magnetoelectric dipole array antenna. The array antenna consists of antenna elements and a supporting structure. Multiple antenna elements are arrayed within the supporting structure. Each antenna element includes a radiating structure and a feeding structure. The radiating structure is a multi-layer structure with feeding structures arranged between its layers. The feeding structure employs dual-polarized microstrip feed lines. One side of each of the two microstrip feed lines is bridging and cross-laid on the lower surface of the bottom layer of the radiating structure. The feeding structure also includes two orthogonally arranged H-shaped coupling slots, which are arranged on the upper surface of the bottom layer of the radiating structure. This invention achieves ±45° dual-polarization through H-shaped slot coupling feeding and uses a slot coupling feeding and dual-polarized feed line co-layer design, compressing the antenna profile to 0.12λ0. The operating frequency band covers 3.2–5.36 GHz, the array antenna gain is better than 8 dBi, and the dual-polarization port isolation is better than 23 dB. It can simultaneously meet the requirements of the n78 and n79 frequency bands in 5G communication and is suitable for low-cost, miniaturized 5G base station equipment.
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Description

Technical Field

[0001] This invention relates to the field of array antenna technology in the field of fifth-generation mobile communication, and particularly to a dual-polarized magnetoelectric dipole array antenna. Background Technology

[0002] With the large-scale commercial deployment of fifth-generation mobile communication (5G) globally, wireless communication systems are undergoing unprecedented changes. Compared to 4G, 5G has achieved orders-of-magnitude improvements in key indicators such as peak speed, deployment density, and transmission latency, thanks to the introduction of key technologies such as ultra-dense networking, massive MIMO, and millimeter waves. In the Sub-6GHz band, n78 (3.3-3.8GHz) and n79 (4.4-5.0GHz) have become core frequency bands widely deployed by global operators, undertaking the basic coverage and capacity requirements of 5G networks.

[0003] Traditional magnetoelectric dipole antennas offer excellent performance in terms of operating bandwidth, omnidirectional element pattern, and dual-polarization implementation, making them particularly suitable for base station antenna applications. However, their classic Γ-shaped feed structure results in an excessively high overall profile, which contradicts the application requirements of 5G micro base stations for low-profile, miniaturized, and easily integrated antennas. Mainstream approaches have attempted to reduce the antenna profile height by using artificial metamaterial structures and planar feed structures, respectively, in terms of the antenna radiating structure and the feed structure. However, the broadband performance of artificial metamaterial structures needs improvement, making it difficult to simultaneously meet the high-performance requirements of both the n78 and n79 dual-band frequencies. Planar feed structures also encounter challenges in achieving dual polarization due to complex layout and severe mutual coupling. Therefore, a magnetoelectric dipole antenna with low profile characteristics is urgently needed to meet the application requirements of 5G base station antennas. Summary of the Invention

[0004] In view of the shortcomings of the prior art, the purpose of this invention is to provide a dual-polarized magnetoelectric dipole array antenna, which aims to solve the problem that the Γ-shaped feeding structure of traditional magnetoelectric dipole antennas results in an excessively high overall profile, which contradicts the application requirements of 5G micro base stations for low-profile, miniaturized, and easily integrated antennas, and makes it difficult to simultaneously meet the high-performance requirements of both n78 and n79 dual-band antennas.

[0005] To achieve the above objectives, the present invention adopts the following technical solution: A dual-polarized magnetoelectric dipole array antenna is disclosed. The array antenna consists of antenna elements and a support structure. Multiple antenna elements are arrayed within the support structure. Each antenna element includes a radiating structure and a feeding structure. The radiating structure is a multi-layer structure with feeding structures arranged between its layers. The feeding structure employs dual-polarized microstrip feed lines. One side of each of the two microstrip feed lines is bridging and cross-arranged on the lower surface of the bottom layer of the radiating structure. The feeding structure also includes two orthogonally arranged H-shaped coupling slots, which are arranged on the upper surface of the bottom layer of the radiating structure.

[0006] Furthermore, the power feeding structure includes a third dielectric substrate, a first microstrip line, and a second microstrip line. Both the first and second microstrip lines adopt a bell-shaped structure. One side of the first microstrip line and one side of the second microstrip line are connected and intersected on the lower surface of the bottom layer of the radiating structure. The third dielectric substrate is located below the first and second microstrip lines.

[0007] Furthermore, the first microstrip line includes a first L-shaped microstrip line, a second L-shaped microstrip line, and a first circular end. The short sides of the first L-shaped microstrip line and the second L-shaped microstrip line are connected, and the first circular end is connected to the shorting point. The second microstrip line includes a third L-shaped microstrip line, a fourth L-shaped microstrip line, and a second circular end. The short sides of the third L-shaped microstrip line and the fourth L-shaped microstrip line are connected, and the second circular end is connected to the shorting point. The second L-shaped microstrip line and the fourth L-shaped microstrip line are crossed and bridging. A bridging microstrip line is provided on the second L-shaped microstrip line. The bridging microstrip line passes through a through hole and bridging to the upper surface of the bottom layer of the radiation structure.

[0008] Furthermore, the H-type coupling gap includes two symmetrical transverse gaps and a central longitudinal gap. The two transverse gaps are located at both ends of the central longitudinal gap, and the width of the central longitudinal gap is 3 mm.

[0009] Furthermore, the radiating structure includes a first dielectric substrate, a second dielectric substrate, and a ground layer connected sequentially from top to bottom. A radiating layer is provided on the first dielectric substrate. Multiple sets of metal vias are arrayed on the first dielectric substrate, the second dielectric substrate, and the ground layer. The multiple sets of metal vias are arrayed along the intersection of two orthogonally arranged H-shaped coupling gaps, and each set of metal vias consists of three vias arranged in a right-angled triangular array.

[0010] Furthermore, the radiating layer includes four rectangular patches arranged in an array. The rectangular patches are disposed on the upper surface of the first dielectric substrate. The rectangular patches are 9.8 mm in size and have a patch spacing of 3 mm between each pair of rectangular patches. A metal sheet is disposed on the lower surface of the first dielectric substrate, and the rectangular patches are connected to the metal sheet through metallized vias.

[0011] Furthermore, the metal vias connecting the rectangular patch to the ground layer are arranged in groups of three, with a group spacing of 6.2 mm. The spacing between any two vias on the right-angled side of each group is 3 mm.

[0012] Furthermore, the support structure includes a support frame, which contains multiple support columns. The antenna unit is fixed inside the support frame via the support columns, and a support base plate is also provided at the bottom of the support frame.

[0013] Furthermore, a power divider is provided between the support frame and the support base plate. The power divider has multiple internal interfaces, and the support base plate has two external interfaces. The two external interfaces are connected to the power divider. The internal interfaces have internal ports, which are connected to the two microstrip feed lines of the power supply structure.

[0014] The technical solution adopted in this invention has the following beneficial effects: The dual-polarized magnetoelectric dipole antenna element in this invention adopts a slot-coupled feeding method, which avoids the three-dimensional Γ-shaped feeding structure and air reflection layer used in traditional magnetoelectric dipoles. Combined with the same-layer cross-topology layout of the dual-polarized microstrip feed line, the overall profile height of the antenna is greatly compressed to 0.12λ0, which is beneficial for its application in miniaturized low-profile 5G base station equipment.

[0015] The dual-polarized magnetoelectric dipole antenna of this invention operates in the 3.2-5.36GHz frequency band with a relative bandwidth of 50%. The antenna element gain is 5.5dBi, the E-plane and H-plane directions are basically consistent and stable, and the antenna element beamwidth reaches between 90° and 116°. The array antenna gain is better than 8dBi, and the port isolation within the operating frequency band is better than -23dB. It meets the usage requirements in the n78 and n79 frequency bands of 5G communication, and also meets the application requirements of low cost, miniaturization and broadband of 5G base station antennas.

[0016] The dual-polarized magnetoelectric dipole antenna of this invention is made using a multi-layer PCB process, which results in high precision and good consistency. Furthermore, the supporting shell structure is manufactured using photopolymerization 3D printing, avoiding the high cost problem of traditional metal machining. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of a low-profile magnetoelectric dipole antenna array element (placed in the array). Figure 2 Exploded view of a dual-polarized magnetoelectric dipole antenna unit structure; Figure 3 A schematic diagram of a rectangular metal patch in a radial structure; Figure 4 A schematic diagram of a metal patch with a meandering structure; Figure 5 This is a top view of the first dielectric substrate; Figure 6 A schematic diagram of a metal floor with mutually orthogonal H-shaped coupling gaps; Figure 7 A schematic diagram of a dual-polarized microstrip feeder line crossing at the same level; Figure 8 This is a schematic diagram of the bottom of a dual-polarized magnetoelectric dipole antenna element; Figure 9 Exploded view of a dual-polarized magnetoelectric dipole array antenna; Figure 10 This is a schematic diagram of the bottom of a dual-polarized magnetoelectric dipole array antenna; Figure 11 Simulation and measured results of the reflection coefficients |S11|, |S21|, and |S22| of the integrated antenna array; Figure 12 The gain of the integrated antenna array varies with frequency. Figure 13 Simulated and measured radiation patterns of the array antenna at ±45° polarization port at 3.3 GHz; Figure 14 Simulated and measured radiation patterns of the array antenna at ±45° polarization port at 3.8 GHz; Figure 15 Simulated and measured radiation patterns of the array antenna at ±45° polarization port at 4.4 GHz; Figure 16 The simulated and measured radiation patterns of the array antenna at ±45° polarization port at 5.0 GHz are shown.

[0018] 10. Antenna element; 100. Radiation structure; 101. First dielectric substrate layer; 1011. Aperture spacing; 1012. Group spacing; 102. Second dielectric substrate layer; 103. Radiation layer; 1031. Rectangular patch; 1032. Patch spacing; 1034. Metal sheet; 104. Ground layer; 105. Metal via; 200. Feed structure; 201. First microstrip line; 2011. First circular end; 2012. First L-shaped microstrip line; 2013. Bridging microstrip line; 20 14. Second L-shaped microstrip line; 202. Second microstrip line; 2021. Second circular end; 2022. Third L-shaped microstrip line; 2023. Fourth L-shaped microstrip line; 203. H-shaped coupling slot; 2031. Transverse slot; 2032. Central longitudinal slot; 204. Third dielectric substrate; 300. Support structure; 301. Support column; 302. Support frame; 303. Support base plate; 401. Internal interface; 4011. Internal port; 402. Power divider; 403. External interface. Detailed Implementation

[0019] To make the objectives, technical solutions, and effects of this invention clearer and more explicit, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

[0020] A dual-polarized magnetoelectric dipole array antenna, comprising antenna elements 10 and a support structure 300, wherein multiple antenna elements 10 are arrayed within the support structure 300, and each antenna element 10 includes a radiating structure 100 and a feeding structure 200; as shown Figure 1 The diagram shows a schematic of the structure of the dual-polarized magnetoelectric dipole array antenna element 10 of the present invention (the figure is placed in the array). The antenna element 10 is arranged sequentially along the X direction (marked by the dashed line in the figure). The antenna element 10 consists of a radiating structure 100 and a feeding structure 200, and also includes a supporting structure 300.

[0021] Combination Figure 2 The radiating structure 100 is a multi-layer structure, with a power supply structure 200 arranged between its layers. The power supply structure 200 adopts a dual-polarized microstrip power supply line. One side of the two microstrip power supply lines is bridging and cross-arranged on the lower surface of the bottom layer of the radiating structure 100. The power supply structure 200 also has two orthogonally arranged H-shaped coupling gaps 203, which are arranged on the upper surface of the bottom layer of the radiating structure 100.

[0022] In this embodiment, the feeding structure 200 includes a third dielectric substrate 204, a first microstrip line 201, and a second microstrip line 202. Both the first microstrip line 201 and the second microstrip line 202 adopt a bell-shaped structure. One side of the first microstrip line 201 and the other side of the second microstrip line 202 are intersected and arranged on the lower surface of the bottom layer of the radiating structure 100. The two mutually orthogonal microstrip lines are used to achieve ±45° dual-line polarization excitation. A stepped impedance transformation structure is adopted to compensate for the inductive reactance introduced by the H-type coupling slot 203 and broaden the impedance bandwidth of the antenna. The first microstrip line 201 and the second microstrip line 202 feed signal energy to the upper radiating layer 103 through the H-type coupling slot 203 in an electromagnetic coupling manner. The third dielectric substrate 204 is disposed below the first microstrip line 201 and the second microstrip line 202.

[0023] In this embodiment, combined with Figure 2 , Figure 6 and Figure 7The first microstrip line 201 includes a first L-shaped microstrip line 2012, a second L-shaped microstrip line 2014, and a first circular end 2011. The short sides of the first L-shaped microstrip line 2012 and the second L-shaped microstrip line 2014 are connected, and the first circular end 2011 is connected at the shorting point. The second microstrip line 202 includes a third L-shaped microstrip line 2022, a fourth L-shaped microstrip line 2023, and a second circular end 2021. The short sides of the third L-shaped microstrip line 2022 and the fourth L-shaped microstrip line 2023 are connected, and the second circular end 2021 is connected at the shorting point. The second L-shaped microstrip line 2014 and the fourth L-shaped microstrip line 2023 are crossed and connected. The L-shaped microstrip line 2014 is provided with a bridging microstrip line 2013, which passes through a through-hole and bridging to the upper surface of the bottom layer of the radiation structure 100. Energy signals are obtained by electrically connecting to the coaxial feed interface through the first circular end 2011 and the second circular end 2021. The signals flow through the first L-shaped microstrip line 2012, the bridging microstrip line 2013 and the second L-shaped microstrip line 2014, as well as the third L-shaped microstrip line 2022 and the fourth L-shaped microstrip line 2023, respectively, transmitting the signal energy to the H-shaped coupling gap 203. The bridging microstrip line 2013 is on the same layer as the ground layer 104, coupling the electromagnetic energy to the upper radiation layer 103.

[0024] In this embodiment, combined with Figure 5 The H-shaped coupling gap 203 includes two symmetrical transverse gaps 2031 and a central longitudinal gap 2032. The two transverse gaps 2031 are located at both ends of the central longitudinal gap 2032, as shown below. Figure 6 The diagram shows a grounding layer 104 with mutually orthogonal H-shaped coupling slots 203 according to the present invention. The width of the central longitudinal slot 2032 is a key parameter for impedance matching between the microstrip line and the radiating patch. The width of the central longitudinal slot 2032 is 3 mm.

[0025] In this embodiment, as Figure 2 The figure shown is an exploded view of the structure of the dual-polarized magnetoelectric dipole antenna unit 10 of the present invention. The radiating structure 100 includes a first dielectric substrate 101, a second dielectric substrate 102 and a ground layer 104 connected sequentially from top to bottom. A radiating layer 103 is provided on the first dielectric substrate 101. Multiple sets of metal vias 105 are arrayed on the first dielectric substrate 101, the second dielectric substrate 102 and the ground layer 104. The multiple sets of metal vias 105 are arrayed along the intersection of two orthogonally arranged H-shaped coupling slots 203, and each set of metal vias 105 is set to three, arranged in a right-angled triangular array.

[0026] The first dielectric substrate 101, the second dielectric substrate 102, and the third dielectric substrate 204 are all made of polytetrafluoroethylene fiberglass board with a dielectric constant of 3.5 and a loss tangent of 0.0022. The antenna unit 10 is fabricated using standard multilayer PCB technology, achieving both superior electrical performance and compact structure with mass production feasibility. In terms of composition, the antenna unit 10 is formed by stacking four cylinders along the Z1 direction.

[0027] The upper surface of the first dielectric substrate 101 is embedded with a radiation layer 103 composed of four rectangular metal patches, forming an electric dipole radiation unit, wherein, combined with Figure 3 and Figure 4 The radiating layer 103 includes four rectangular patches 1031 arranged in an array. The size of the rectangular patches 1031 is a key parameter that determines the resonant frequency in electric dipole mode. The spacing of the rectangular patches 1031 directly affects the coupling strength between two orthogonal polarization ports. In this embodiment, the rectangular patches 1031 are disposed on the upper surface of the first dielectric substrate 101. The size of the rectangular patches 1031 is 9.8 mm. A patch spacing 1032 of 3 mm is provided between each pair of rectangular patches 1031.

[0028] The lower surface of the first dielectric substrate 101 is provided with a metal sheet 1034, and rectangular patches 1031 are connected to the metal sheet 1034 through metallized vias. Two metal sheets 1034 are attached below each rectangular metal patch, forming a meandering structure. By extending the current path, the patch size is effectively reduced while maintaining electrical performance. This structure forms a standing wave current on the working surface, which is equivalent to an electric dipole radiating electromagnetic waves outward. The ground layer 104 is located below the second dielectric substrate 102. Two mutually orthogonal H-shaped coupling slots 203 are formed on the ground layer 104. Each H-shaped coupling slot 203 consists of two symmetrical transverse slots 2031 and a central longitudinal slot 2032.

[0029] Multiple metal vias 105 penetrate from top to bottom through the first dielectric substrate 101, the second dielectric substrate 102, the ground layer 1041, and the third dielectric substrate 204, electrically connecting the rectangular patch 1031 of the radiating layer 103 to the ground layer 104. These metal vias 105, together with the H-shaped coupling slots 203 on the ground layer 104, form an equivalent magnetic flux loop surrounding the slots, constituting the magnetic dipole radiation part of the antenna. The electric dipole and the magnetic dipole compensate for each other in the radiation field, achieving broadband impedance matching and a stable directional radiation pattern.

[0030] The spacing of the metallized vias affects the resonant frequency and equivalent inductance in the magnetic dipole mode. In this embodiment, the metal vias 105 connecting the rectangular patch 1031 and the ground layer 104 are arranged in groups of three, with a group spacing of 1012 of 6.2 mm. The hole spacing 1011 between the two holes on the right-angled sides of each group of metal vias 105 is 3 mm.

[0031] In this embodiment, the support structure 300 includes a support frame 302, and a plurality of support columns 301 are provided inside the support frame 302. The antenna unit 10 is fixed inside the support frame 302 through the support columns 301. A support base plate 303 is also provided at the bottom of the support frame 302. The support columns 301, the support frame 302 and the support base plate 303 are all made using 3D printing.

[0032] In this embodiment, as Figure 8 , Figure 9 and Figure 10 As shown, a power divider 402 is also provided between the support frame 302 and the support base plate 303. The power divider 402 is a Wilkinson power divider with a four-way split feed network. The power divider 402 has multiple internal interfaces 401, and the support base plate 303 has two external interfaces 403, which are connected to the power divider 402. The external interfaces 403 are the two input ports of the array antenna. The internal interfaces 401 have internal ports 4011, which are connected to the two microstrip feed lines of the feed structure 200. The internal interfaces 401 use SMP-JHD7 connectors selected through testing and comparison. Figure 8 The internal port 4011 is the female connector of the SMP interface.

[0033] By configuring the antenna element 10 as described above, the antenna element 10 achieves a |S11| better than -10dB in the 3.2–5.6GHz frequency band.

[0034] like Figure 11 The figures show the simulation and measured results of the reflection coefficients |S11|, |S21|, and |S22| of the antenna array in a specific embodiment of the present invention. For port one (+45° polarization), |S11| ≤ -10dB in the frequency range of 3.08-5.23GHz, with a relative bandwidth of 51.7%. For port two (-45° polarization), |S11| ≤ -10dB in the frequency range of 3.15-5.3GHz, with a relative bandwidth of 50.9%. Both ports fully cover the required operating frequency bands and meet the initial antenna design requirements. The dual-polarization isolation within the operating frequency band is better than -23dB, reaching -27.7dB and -27.8dB at the center frequencies of the n78 and n79 bands (3.4GHz and 4.7GHz), respectively.

[0035] like Figure 12As shown, the gain of the antenna array varies with frequency in a specific embodiment of the present invention. The gain of port one (+45° polarization) is between 8.5-9.9 dBi in the low-frequency n78 band and between 8-8.7 dBi in the high-frequency n79 band. The gain of port two (-45° polarization) is between 8.8-10.1 dBi in the low-frequency n78 band and between 8.3-9 dBi in the high-frequency n79 band. The overall antenna gain is better than 8 dBi.

[0036] like Figure 13 , 14 Figures 15 and 16 show the simulated and measured radiation patterns of the antenna array at 3.3 GHz, 3.8 GHz, 4.4 GHz, and 5 GHz, respectively, for port 1 (+45° polarization) and port 2 (-45° polarization). The beamwidth of the array antenna is 25°-36°. Within the entire wideband covering n78 and n79, the radiation patterns of the E-plane and H-plane are very stable and symmetrical, without distortion or splitting. The measured cross-polarization ratio is generally better than 15 dB.

[0037] In summary, through the above-mentioned functional layered integration structure, the profile height of this antenna element 10 (from the upper surface of the radiating structure 100 to the lower surface of the first microstrip line 201 and the second microstrip line 202) is successfully compressed to 0.12λ0. The measured operating frequency band covers 3.2-5.36GHz, with a relative bandwidth of 50.5%. The isolation between polarization ports is better than -23dB, and it fully covers the n78 and n79 frequency bands of 5G communication, making it suitable for miniaturized 5G base station equipment.

[0038] The integrated array antenna uses a 402 quadrature Wilkinson power divider feed network, enabling ±45° dual polarization feeding of the antenna. After integration, the antenna array has |S11|≤-10dB in the 3.15-5.23GHz frequency range, with a relative bandwidth of 49.6%. The E-plane and H-plane radiation patterns of the two polarization ports show that the beamwidth is stable at 25°-36°. The dual-line polarized magnetoelectric dipole array antenna has a gain better than 8dBi and a polarization isolation better than -23dB, meeting the performance requirements of miniaturized 5G base station equipment.

Claims

1. A dual-polarized magnetoelectric dipole array antenna, characterized in that, The array antenna consists of antenna elements (10) and a support structure (300). Multiple antenna elements (10) are arrayed within the support structure (300). The antenna elements (10) include a radiating structure (100) and a feeding structure (200). The radiating structure (100) is a multi-layer structure with a feeding structure (200) between its layers. The feeding structure (200) uses dual-polarized microstrip feed lines. One side of the two microstrip feed lines is bridging and cross-laid on the lower surface of the bottom layer of the radiating structure (100). The feeding structure (200) also has two orthogonally arranged H-shaped coupling slots (203). The H-shaped coupling slots (203) are laid on the upper surface of the bottom layer of the radiating structure (100).

2. The dual-polarized magnetoelectric dipole array antenna according to claim 1, characterized in that, The power feeding structure (200) includes a third dielectric substrate (204), a first microstrip line (201), and a second microstrip line (202). Both the first microstrip line (201) and the second microstrip line (202) adopt a bell-shaped structure. One side of the first microstrip line (201) and one side of the second microstrip line (202) are connected and intersected on the lower surface of the bottom layer of the radiation structure (100). The third dielectric substrate (204) is located below the first microstrip line (201) and the second microstrip line (202).

3. The dual-polarized magnetoelectric dipole array antenna according to claim 2, characterized in that, The first microstrip line (201) includes a first L-shaped microstrip line (2012), a second L-shaped microstrip line (2014), and a first circular end (2011). The short sides of the first L-shaped microstrip line (2012) and the second L-shaped microstrip line (2014) are connected, and the first circular end (2011) is connected at the short connection point. The second microstrip line (202) includes a third L-shaped microstrip line (2022), a fourth L-shaped microstrip line (2023), and a second circular end (2014). 021), the short sides of the third L-shaped microstrip line (2022) and the fourth L-shaped microstrip line (2023) are connected, the second circular end (2021) is connected at the short connection, and the second L-shaped microstrip line (2014) and the fourth L-shaped microstrip line (2023) are crossed and connected. The second L-shaped microstrip line (2014) is provided with a bridging microstrip line (2013), and the bridging microstrip line (2013) passes through the through hole and bridging to the upper surface of the bottom layer of the radiation structure (100).

4. The dual-polarized magnetoelectric dipole array antenna according to claim 2, characterized in that, The H-type coupling gap (203) includes two symmetrical transverse gaps (2031) and a central longitudinal gap (2032). The two transverse gaps (2031) are located at both ends of the central longitudinal gap (2032), and the width of the central longitudinal gap (2032) is 3 mm.

5. The dual-polarized magnetoelectric dipole array antenna according to claim 1, characterized in that, The radiating structure (100) includes a first dielectric substrate (101), a second dielectric substrate (102) and a ground layer (104) connected sequentially from top to bottom. A radiating layer (103) is provided on the first dielectric substrate (101). Multiple sets of metal vias (105) are arrayed on the first dielectric substrate (101), the second dielectric substrate (102) and the ground layer (104). The multiple sets of metal vias (105) are arrayed along the intersection of two orthogonally arranged H-shaped coupling gaps (203), and each set of metal vias (105) is set to three, and arranged in a right-angled triangular array.

6. The dual-polarized magnetoelectric dipole array antenna according to claim 5, characterized in that, The radiating layer (103) includes four rectangular patches (1031) arranged in an array. The rectangular patches (1031) are disposed on the upper surface of the first dielectric substrate (101). The rectangular patches (1031) are 9.8 mm in size and the patch spacing (1032) between each pair of rectangular patches (1031) is 3 mm. A metal sheet (1034) is provided on the lower surface of the first dielectric substrate (101), and the rectangular patches (1031) are connected to the metal sheet (1034) through metallized vias.

7. The dual-polarized magnetoelectric dipole array antenna according to claim 6, characterized in that, The rectangular patch (1031) is connected to the ground layer (104) by a metal through hole (105). Three metal through holes (105) are grouped together, and the spacing between the groups is set as a group spacing (1012), which is 6.2 mm. The spacing between the two through holes of the right angle side of each group of metal through holes (1011) is 3 mm.

8. The dual-polarized magnetoelectric dipole array antenna according to claim 1, characterized in that, The support structure (300) includes a support frame (302), which has multiple support columns (301) inside. The antenna unit (10) is fixed inside the support frame (302) through the support columns (301). The support frame (302) also has a support base plate (303) at the bottom.

9. The dual-polarized magnetoelectric dipole array antenna according to claim 8, characterized in that, A power divider (402) is provided between the support frame (302) and the support base plate (303). The power divider (402) is provided with multiple internal interfaces (401), and the support base plate (303) is provided with two external interfaces (403). The two external interfaces (403) are connected to the power divider (402). The internal interfaces (401) are provided with internal ports (4011), and the internal ports (4011) are connected to the two microstrip feed lines of the power supply structure (200).