Method of generating an image, global shutter image sensor and electronic device

Abstract

A method for generating an image, a global shutter image sensor and an electronic device, the method is applied to a global shutter GS image sensor, the GS image sensor includes a first row of pixel circuits and a last row of pixel circuits, the method includes: controlling the first row of pixel circuits and the last row of pixel circuits to expose at the same time, generating a first electrical signal and a second electrical signal, wherein the first electrical signal is an electrical signal generated by the first row of pixel circuits, and the second electrical signal is an electrical signal generated by the last row of pixel circuits; after the first electrical signal is generated, and before the second electrical signal is generated, controlling the first row of pixel circuits to expose again, generating a third electrical signal; generating a first GS image according to the first electrical signal and the second electrical signal; controlling the last row of pixel circuits to expose again, generating a fourth electrical signal; generating a first RS image according to the third electrical signal and the fourth electrical signal. The method can further improve the output frame rate of the GS image sensor, and meet the needs of users for high frame rate applications.

Description

Technical Field

[0001] This application relates to the field of image sensor technology, and more particularly to a method for generating images, a global shutter image sensor, and an electronic device. Background Technology

[0002] In the field of image sensor technology, global shutter (GS) and rolling shutter (RS) are two main image capture methods. GS exposes all pixels simultaneously to avoid image distortion caused by fast-moving objects, while RS exposes all pixels line by line to provide a higher frame rate. To meet the needs of some application scenarios, existing technologies can generate images with both exposure methods using the same image sensor (such as a GS image sensor), allowing users to choose the appropriate image for processing and analysis based on their specific requirements. For example, in some shooting scenarios, GS images generated by a GS image sensor may be blurry due to long exposure times and object movement. To remove the blur caused by object movement, the GS image sensor can generate GS and RS images sequentially using GS and RS exposure methods. Subsequently, the GS image is used as a reference to align the GS and RS images using an algorithm, thereby improving the quality of the GS image.

[0003] While this method can effectively improve the quality of GS images, the frame rate of the GS and RS images output by the GS image sensor cannot meet practical needs. Even if the GS image sensor can immediately start the exposure and readout processing of the RS image after the complete GS image is output, its frame rate still cannot meet the user's needs for high frame rate (such as hundreds of frames per second or more) application scenarios. Summary of the Invention

[0004] To this end, this application provides a method for generating images, a global shutter image sensor, and an electronic device. This method can further improve the output frame rate of the GS image sensor and meet the user's needs for high frame rate application scenarios.

[0005] To achieve the above objectives, this application adopts the following technical solution:

[0006] In a first aspect, a method for generating an image is provided, applied to a GS image sensor, the GS image sensor including a first row pixel circuit and a last row pixel circuit, the method comprising:

[0007] Simultaneous exposure of the first and last row pixel circuits generates a first electrical signal and a second electrical signal, wherein the first electrical signal is generated by the first row pixel circuit and the second electrical signal is generated by the last row pixel circuit; after the first electrical signal is generated and before the second electrical signal is generated, the first row pixel circuit is exposed again to generate a third electrical signal; a first GS image is generated based on the first and second electrical signals; the last row pixel circuit is exposed again to generate a fourth electrical signal; and a first RS image is generated based on the third and fourth electrical signals.

[0008] In some application scenarios (such as those requiring rapid and continuous image capture), the frame rate of the images output by the GS image sensor cannot meet the user's demand for high frame rates. To address this, this application proposes a method for generating images. In this method, the GS image sensor can control the first row pixel circuit to re-expose after the first electrical signal is generated and before the second electrical signal is generated, thereby generating a third electrical signal. This causes the first GS image and the first RS image to overlap in the generation sequence, effectively improving the frame rate of the GS image and RS images output by the GS image sensor and meeting the user's demand for high frame rate application scenarios (such as fast motion capture, high frame rate video shooting, etc.).

[0009] In one possible implementation, the method further includes: after the third electrical signal is generated and before the fourth electrical signal is generated, controlling the first row pixel circuit to be exposed again to generate a fifth electrical signal; controlling the last row pixel circuit to be exposed again to generate a sixth electrical signal; and generating a second RS image based on the fifth and sixth electrical signals.

[0010] In some applications, it may be necessary to utilize information from long-exposure dark areas in RS images to enhance information from short-exposure dark areas in GS images. Therefore, the GS image sensor can generate one GS image (such as the first GS image) and two RS images (such as the first RS image and the second RS image) to facilitate subsequent image enhancement processing. In addition, after the third electrical signal is generated and before the fourth electrical signal is generated, the GS image sensor controls the first row pixel circuit to re-explode, generating the fifth electrical signal. This causes the second RS image and the first RS image to overlap in the generation sequence. This not only saves frame output time and increases the frame rate, but also meets the user's demand for high frame rates in specific scenarios.

[0011] In one possible implementation, the exposure duration of the second RS image is greater than that of the first RS image.

[0012] In certain application scenarios, given that short-exposure images can capture detailed information in bright areas, while long-exposure images can effectively reduce noise in dark areas, GS image sensors can achieve high dynamic range image capture by generating two RS images (such as a first RS image and a second RS image) with short and long exposures. Furthermore, through subsequent image fusion processing (such as fusing the first RS image and the second RS image), a comprehensive image that retains details in bright areas and clearly shows information in dark areas can be generated. This is of great significance for improving image quality and enhancing the visual experience.

[0013] In one possible implementation, the first gain is different from the generation gain of the first RS image; the first gain is the gain of the second RS image.

[0014] In some application scenarios, during the generation of the first GS image, the GS image sensor can successively generate the first RS image and the second RS image, so that the first GS image and the two RS images overlap in generation time, thereby improving the overall output frame rate. During this process, the GS image sensor can use different gains to generate the two RS images. For example, one frame uses gain 1 to clearly preserve the details of the highlight areas of the image, while the other frame uses gain 2 (greater than gain 1) to accurately capture the details of the shadow areas of the image. By merging these two RS images in the subsequent process, an RS image with a wider dynamic range and richer detail can be generated.

[0015] In one possible implementation, before controlling the first row pixel circuit to re-expose and generate the third electrical signal, the method further includes: after the first electrical signal is generated and before the second electrical signal is generated, controlling the first row pixel circuit to generate a seventh electrical signal according to a second gain, the second gain being different from the generation gain of the first GS image; after the second electrical signal is generated, controlling the tail row pixel circuit to generate an eighth electrical signal according to the second gain, the seventh and eighth electrical signals being used to generate the second GS image.

[0016] In some applications, in addition to generating two RS images with different gains (such as the first RS image and the second RS image), GS image sensors can also generate two GS images with different gains. One frame (such as the first GS image) uses gain 01 to clearly preserve the details of the highlight areas of the image, while the other frame (such as the second GS image) uses gain 02 (greater than gain 01) to accurately capture the details of the shadow areas of the image. By merging these two GS images in the subsequent process, a GS image with a wider dynamic range and richer detail can be generated.

[0017] In one possible implementation, the exposure time of the first GS image is shorter than the exposure time of the first RS image.

[0018] In some application scenarios, when generating the first GS image and the first RS image, the GS image sensor can use a shorter exposure time for the first GS image than a preset time (e.g., 2ms), while using a longer exposure time for the first RS image than a preset time (e.g., 2ms). This allows the GS image sensor to generate the first GS image with a shorter exposure time in scenarios that require capturing dynamic changes (or extreme lighting conditions), thereby obtaining clearer and more accurate contour or dynamic information, while using a longer exposure time for the first RS image can capture more details or depth information.

[0019] In one possible implementation, before controlling the first row pixel circuit to be exposed again and generating the third electrical signal, the method further includes resetting the first row pixel circuit.

[0020] Before the first row of pixel circuits is re-exposed, each pixel circuit accumulates photogenerated charge during the exposure stage. Therefore, after the exposure and electrical signal reading of a row of pixel circuits are completed, some incompletely released charge or electrical signal may remain in the pixel circuits. If these residual charges or electrical signals are not reset, they may interfere with the newly generated electrical signal, resulting in a decrease in image quality, such as ghosting, blurring, or signal distortion. By resetting the pixel circuits, it can be ensured that the electrical signal value generated each time is the actual value of the current row of pixels, and is not interfered with by the residual signal generated in the previous generation.

[0021] In one possible implementation, the first row pixel circuit includes a first photosensitive element, a first transfer transistor, a second transfer transistor, a first floating diffusion (FD) node, a first reset transistor, and a first selection transistor. The output terminal of the first photosensitive element is connected to the input terminal of the first transfer transistor, the output terminal of the first transfer transistor is connected to the input terminal of the second transfer transistor, the output terminal of the second transfer transistor is connected to both the first floating diffusion node and the input terminal of the first reset transistor, and the output terminal of the first reset transistor is connected to the input terminal of the first selection transistor. Resetting the first row pixel circuit includes: resetting the first photosensitive element and the first floating diffusion node via the first reset transistor when the first transfer transistor, the second transfer transistor, and the first selection transistor are all closed.

[0022] In one possible implementation, controlling the first row of pixel circuits to re-expose and generate a third electrical signal includes: controlling the first photosensitive element to re-expose the first row of pixel circuits to generate a first row of photogenerated charges; transferring the first row of photogenerated charges to a first floating diffusion node when the first transfer transistor, the second transfer transistor, and the first selection transistor are all closed; and converting the first row of photogenerated charges into an electrical signal through the first floating diffusion node to generate a third electrical signal.

[0023] In one possible implementation, before controlling the trailing pixel circuit to be exposed again and generating the fourth electrical signal, the method further includes resetting the trailing pixel circuit.

[0024] In one possible implementation, the trailing pixel circuit includes a second photosensitive element, a third transfer transistor, a fourth transfer transistor, a second floating diffusion node, a second reset transistor, and a second selection transistor. The output terminal of the second photosensitive element is connected to the input terminal of the third transfer transistor, the output terminal of the third transfer transistor is connected to the input terminal of the fourth transfer transistor, the output terminal of the fourth transfer transistor is connected to both the second floating diffusion node and the input terminal of the second reset transistor, and the output terminal of the second reset transistor is connected to the input terminal of the second selection transistor. Resetting the trailing pixel circuit includes: resetting the second photosensitive element and the second floating diffusion node via the second reset transistor when the third transfer transistor, the fourth transfer transistor, and the second selection transistor are all closed.

[0025] In one possible implementation, controlling the tail pixel circuit to re-expose and generate a fourth electrical signal includes: controlling the second photosensitive element to re-expose the tail pixel circuit to generate a second row of photogenerated charges; transferring the second row of photogenerated charges to a second floating diffusion node when the third transfer transistor, the fourth transfer transistor, and the second selection transistor are all closed; and converting the second row of photogenerated charges into an electrical signal through the second floating diffusion node to generate a fourth electrical signal.

[0026] In a second aspect, embodiments of this application provide a GS image sensor, which includes: a first row pixel circuit, a last row pixel circuit, and a control circuit. Both the first row pixel circuit and the last row pixel circuit include multiple pixel circuits. The control circuit is used to control the GS image sensor to perform the methods described in the first aspect and various possible implementations of the first aspect.

[0027] Thirdly, embodiments of this application provide an electronic device including a GS image sensor, the GS image sensor being used to perform the methods described in the first aspect and various possible implementations of the first aspect.

[0028] Fourthly, embodiments of this application provide a computer-readable storage medium storing a computer program that, when executed by an electronic device, causes the electronic device to perform the methods described in the first aspect and various possible implementations of the first aspect.

[0029] Fifthly, embodiments of this application provide a computer program product comprising: computer program code, which, when executed by an electronic device, causes the electronic device to perform the methods described in the first aspect and various possible implementations of the first aspect.

[0030] In a sixth aspect, embodiments of this application provide an imaging system including a processing circuit and a GS image sensor, the processing circuit being configured to control the GS image sensor to perform the methods described in the first aspect and various possible implementations of the first aspect.

[0031] Optionally, the processing circuit in the above imaging system can be replaced with a processor with equivalent processing capabilities.

[0032] Optionally, the imaging system described above may further include a storage unit connected to the processing circuit (or processor) for storing image data processed by the processing circuit (or processor).

[0033] Optionally, the imaging system may also include a communication interface for enabling communication between the imaging system and external devices.

[0034] The beneficial effects of the technical solutions in the second to sixth aspects of this application can be the same as the beneficial effects of the technical solutions in the first aspect, and will not be repeated here. Attached Figure Description

[0035] Figures 1A to 1J This application provides schematic diagrams of the structure of some pixel circuits in its embodiments.

[0036] Figure 2 A schematic diagram of the hardware structure of an electronic device 100 provided in an embodiment of this application;

[0037] Figure 3 A flowchart illustrating a method 300 for generating an image according to an embodiment of this application;

[0038] Figures 4A to 4B This is a schematic diagram of an application scenario provided by an embodiment of this application;

[0039] Figure 5 This is a schematic diagram illustrating another application scenario provided by an embodiment of this application;

[0040] Figures 6A to 6CThis is a schematic diagram illustrating another application scenario provided by an embodiment of this application;

[0041] Figure 7 This is a schematic diagram illustrating another application scenario provided by an embodiment of this application;

[0042] Figure 8 A schematic diagram of the first row pixel circuit structure provided in an embodiment of this application;

[0043] Figure 9 A schematic diagram of another first-row pixel circuit structure provided in an embodiment of this application;

[0044] Figure 10 This is a schematic diagram of a trailing pixel circuit structure provided in an embodiment of this application;

[0045] Figures 11A to 11B This is a schematic diagram of an application scenario provided by an embodiment of this application;

[0046] Figures 12A to 12C This is a schematic diagram illustrating another application scenario provided by an embodiment of this application;

[0047] Figures 13A to 13B This is a schematic diagram illustrating another application scenario provided by an embodiment of this application;

[0048] Figures 14A to 14B This is a schematic diagram illustrating another application scenario provided by an embodiment of this application;

[0049] Figures 15A to 15B This is a schematic diagram illustrating another application scenario provided in the embodiments of this application. Detailed Implementation

[0050] To clearly describe the technical solutions of the embodiments of this application, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. It should be noted that the embodiments described in this application are only some embodiments of this application, and not all embodiments.

[0051] In the description of the embodiments of this application, unless otherwise stated, " / " means "or", for example, A / B can mean A or B. "And / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, and B alone. "At least one" means one or more, and "more" means two or more. "At least one of the following" or similar expressions refer to any combination of these items, including any combination of single or multiple items. For example, at least one of a, b, or c can represent: a, b, c, a and b, a and c, b and c, or a and b and c, where a, b, and c can be single or multiple. In addition, in order to clearly describe the technical solutions of the embodiments of this application, the terms "first" and "second" are used in the embodiments of this application to distinguish the same or similar items with basically the same function and role. Those skilled in the art will understand that the terms "first" and "second" do not limit the quantity or execution order. For example, the terms "first" in the first transfer transistor and "second" in the second transfer transistor in the embodiments of this application are only used to distinguish different transfer transistors. The descriptions of "first," "second," etc., appearing in the embodiments of this application are only for illustration and to distinguish the described objects, and have no order, nor do they indicate a special limitation on the number of devices in the embodiments of this application, and cannot constitute any limitation on the embodiments of this application.

[0052] In the embodiments of this application, "transfer" and "transmission" have the same meaning, both of which can refer to the movement of charge (such as the first row of photogenerated charge) from one device (such as a storage element) to another device (such as a floating diffusion node), or from one location to another.

[0053] It should be noted that, in the embodiments of this application, the words "exemplary" or "for example" are used to indicate examples, illustrations, or descriptions. Any embodiment or design scheme described as "exemplary" or "for example" in this application should not be construed as being more preferred or advantageous than other embodiments or design schemes. Specifically, the use of the words "exemplary" or "for example" is intended to present the relevant concepts in a specific manner. The terms "comprising," "including," "having," and variations thereof all mean "including but not limited to," unless otherwise specifically emphasized.

[0054] Furthermore, in the embodiments of this application, descriptions such as "under the circumstances", "if", "when", "if", etc. can be used interchangeably. Moreover, these descriptions all refer to the corresponding processing that will be carried out under certain objective circumstances, and are not limited to a specific time. They do not require any judgment action during implementation, nor do they imply any other limitations.

[0055] To facilitate understanding of this application, some technical terms involved in the embodiments of this application will be explained below.

[0056] 1. GS Exposure Method

[0057] GS exposure mode refers to the process in which all pixels on the GS image sensor (or pixel circuit array) start and end exposure at the same time; the simultaneous exposure of all pixels on the entire GS image sensor ensures consistent exposure of the entire image.

[0058] For example, when the shutter of the GS image sensor opens, all pixels of the entire GS image sensor simultaneously collect light, i.e., simultaneous exposure; when the shutter closes, all pixels simultaneously end the exposure and generate an electrical signal (or output or read out an electrical signal). This GS exposure method ensures that the captured images are consistent in time, thereby avoiding image distortion caused by different exposure times.

[0059] 2. RS Exposure Mode

[0060] RS (Repeated Sequence) exposure mode refers to a process where the GS image sensor exposes all pixels sequentially, row by row, during the exposure process. When the shutter of the GS image sensor opens, it exposes each row sequentially, starting from the first row and continuing until the last row is exposed. This RS exposure mode offers lower power consumption and a higher frame rate.

[0061] It should be noted that regardless of whether the GS image sensor uses the GS exposure method or the RS exposure method, the GS image sensor can generate electrical signals in a line-by-line manner after exposure (which can also be understood as reading data in a line-by-line manner). That is, the photogenerated charges (i.e., photons converted into charges) generated after exposure (such as the photogenerated charges in the first line) can be generated into electrical signals line by line. After generating the electrical signals, the GS image sensor can output the electrical signals to the internal readout circuit. The readout circuit can receive and process the electrical signals and finally generate a digital image (such as the first GS image or the first RS image, etc.).

[0062] 3. GS Image Sensor

[0063] like Figure 1A As shown, the GS image sensor may include a control circuit, a pixel circuit array (or pixel unit array), and a readout circuit.

[0064] The control circuit can control the pixel circuit array to perform operations such as photosensitive, reset, and electrical signal generation.

[0065] The area where the pixel circuit array is located can be called the photosensitive circuit area of ​​the GS image sensor; the pixel circuit array can include multiple pixel circuits (also called multiple pixel units), for example, it can include millions or even tens of millions of pixel circuits; the pixel circuit can convert the collected photons into electrical signals (such as the first electrical signal).

[0066] for example, Figure 1A A schematic diagram of a pixel circuit 10 is shown. The pixel circuit 10 may include a photodiode (PD), a floating diffusion node (FD), a charge storage region (capacitor, Cap), a first transfer (TX) transistor (TX1), a second transfer transistor (TX2), a source follower (SF), a reset transistor (RST), and a select transistor (SEL). The PD, as a photosensitive device, converts received photons into electrical charges (also called photogenerated charges or electrons). It should be understood that the PD can be replaced with other devices that convert photons into electrical charges, such as phototransistors or photomultiplier tubes. TX1 controls the transfer of charge from the PD to the Cap. The Cap stores the charge generated by the PD. TX2 controls the transfer of charge from the Cap to the FD. The FD converts the charge from the Cap into a voltage signal (i.e., an electrical signal). (An example); RST is used to control the reset of pixel circuit 10 (e.g., reset PD and FD in pixel circuit 10) to facilitate the next data processing (e.g., charge storage, charge transfer, etc.); SF is used to receive the voltage signal output by FD and output its voltage follower signal according to the voltage signal; the voltage follower signal can be understood as the voltage signal obtained by potential shifting the voltage signal of FD; SEL is used to output the voltage follower signal output by SF to the readout circuit; for example, when SEL is closed, the voltage signal generated by pixel circuit 10 (i.e., the voltage follower signal output by SF) can be output to the readout circuit through SEL.

[0067] The aforementioned readout circuit is connected to the pixel circuit array (i.e., multiple pixel circuits) to receive the voltage signals output by each pixel circuit, convert the received voltage signals into digital signals (i.e., discrete voltage values), and finally generate a digital image (such as the first GS image).

[0068] It should be noted that, typically, the operation of pixel circuit 10 can be divided into two stages: the stage of generating a reference voltage signal and the stage of generating a voltage signal (i.e., an example of an electrical signal). In the stage of generating the reference voltage signal, TX1 and TX2 are disconnected, and the charge generated by PD cannot enter FD. At this time, the voltage of FD is determined by RST. The control circuit can open SEL and output a voltage signal to the readout circuit; this voltage signal is the reference voltage signal. In the stage of generating the voltage signal, the control circuit opens TX1 and TX2, and the charge generated by PD enters FD. Subsequently, FD generates a voltage drop. At this time, the control circuit can open SEL and output a voltage signal (such as a voltage follower signal) to the readout circuit. The readout circuit can determine the actual output voltage value of pixel circuit 10 based on the difference between the reference voltage signal and the voltage signal. It should be noted that... Figure 1A In this context, Vdd represents the drain voltage of RST.

[0069] Combination Figure 1A The schematic diagram of the GS image sensor shown illustrates the working timing flow of each transistor in the pixel circuit 10, as follows: Figure 1B As shown:

[0070] Step (1): At time T1, the control circuit outputs a first transmission signal, a second transmission signal, and a reset signal at a high level, which resets PD and FD. The first transmission signal controls the closing and opening of TX1, the second transmission signal controls the closing and opening of TX2, and the reset signal controls the closing and opening of RST. Subsequently, the control circuit sets the first transmission signal to a low level, which disconnects TX1. The control circuit controls the pixel circuit 10 (i.e., an example of multiple pixel circuits) to start exposure, that is, PD starts collecting photons and converts the photons into charge q, which is stored in Cap.

[0071] It should be noted that before time T1, the control circuit can control TX1 and TX2 to open and RST to close, so that FD is reset; after FD is reset, the control circuit controls SF and SEL to close, and FD can output the first voltage follower signal to the readout circuit through SF and SEL. This first voltage follower signal can be understood as the reference voltage.

[0072] Step (2): At time T2, the control circuit outputs the first transmission signal at a high level, causing TX1 to close again, and the control circuit controls the pixel circuit 10 to stop exposure.

[0073] Step (3): Before time T3, the control circuit outputs a row selection signal and a reset signal at a high level, causing SEL and RST to close; at time T3, the control circuit outputs a second transmission signal at a high level, causing TX2 to close, and the control circuit controls the transfer of charge q in Cap to FD.

[0074] Step (4): After receiving the charge q, the FD converts the charge q into a voltage signal X1 according to the gain D1 and outputs it to the SF; the SF outputs a second voltage follower signal according to the voltage signal X1; since the SEL is closed, the SF can output the second voltage follower signal to the readout circuit through the SEL; the readout circuit can determine the actual output voltage value of the pixel circuit 10 according to the first voltage follower signal and the second voltage follower signal; wherein, the gain D1 can be determined by the capacitor C1.

[0075] It should be noted that, Figure 1A The pixel circuit 10 shown is merely an example of a pixel circuit structure. In practical applications, pixel circuits can have other structural forms, such as... Figure 1C As shown, the pixel circuits included in the above pixel circuit array can also have the structure shown in pixel circuit 20; compared with the structure of pixel circuit 10, pixel circuit 20 adds a gain adjustment circuit 101; the gain adjustment circuit 101 can include a transfer transistor TX3 and a capacitor Cs, wherein TX3 can be used to control the conduction and disconnection of the gain adjustment circuit 101.

[0076] Combination Figure 1C The schematic diagram of the pixel circuit 20 shown illustrates the working timing flow of each transistor in the pixel circuit 20, as follows: Figure 1D As shown:

[0077] It should be noted that before time T3, the workflow of pixel circuit 20 is the same as that of pixel circuit 10 in steps (1) to (4), and will not be repeated here.

[0078] The difference in the workflow between pixel circuit 20 and pixel circuit 10 is as follows:

[0079] Step (5): After time T3 and before time T4, the control circuit outputs a third transmission signal at a high level, causing TX3 to close; after TX3 closes, at time T4, the control circuit outputs a second transmission signal at a high level, causing TX2 to close, and controls the transfer of charge in Cap to FD.

[0080] Step (6): After receiving the charge, FD converts the charge into voltage signal 2 according to gain D2 and outputs it to SF; SF outputs a third voltage follower signal according to the voltage signal 2; since SEL is closed, SF can output the third voltage follower signal to the readout circuit through SEL; the readout circuit can determine the actual output voltage value of pixel circuit 20 according to the first voltage follower signal and the third voltage follower signal; wherein, gain D2 is determined by capacitor Cs and capacitor C1.

[0081] For example, such as Figure 1E As shown, the pixel circuits included in the pixel circuit array described above can also have the structure shown in pixel circuit 30. Compared with the structure of pixel circuit 20, pixel circuit 30 adds a charge collection circuit 102. The charge collection circuit 102 can include a transfer transistor TX4 and a lateral overflow integration capacitor (lofic). TX4 can be used to control the conduction and disconnection of the charge collection circuit 102, and lofic is used to collect the charge overflowing from the Cap due to saturation (also known as photoelectrons). For example, when the amount of charge converted by the PD exceeds the maximum limit that the Cap can originally bear, the excess charge will flow out into the lofic to avoid image overexposure due to overflow.

[0082] Combination Figure 1E The schematic diagram of the pixel circuit 30 shown illustrates the working timing flow of each transistor in the pixel circuit 30, as follows: Figure 1F As shown:

[0083] Step (1): At T 01 At a certain moment, the control circuit outputs a first transmission signal, a second transmission signal, a fourth transmission signal, and a reset signal at a high level, resetting the PD and FD. The first transmission signal controls the opening and closing of TX1, the second transmission signal controls the opening and closing of TX2, the fourth transmission signal controls the opening and closing of TX4, and the reset signal controls the opening and closing of RST. Subsequently, the control circuit sets the first transmission signal low, controlling the pixel circuit 30 (another example of multiple pixel circuits) to begin exposure; that is, the PD begins collecting photons and converting them into charge q1.

[0084] It should be noted that in T 01 Before the specified time, the control circuit can control TX1 and TX2 to be disconnected while RST and TX4 are both closed, so that FD is reset; after FD is reset, the control circuit controls SF and SEL to be closed, and FD can output a voltage follower signal SF0 to the readout circuit through SF and SEL. This voltage follower signal SF0 can be understood as a reference voltage.

[0085] Step (2): T 02 At that moment, the control circuit outputs a first transmission signal at a high level, causing TX1 to close again and controlling the pixel circuit 30 to stop exposure.

[0086] Step (3): At T 03 Before the specified time, the control circuit outputs a row selection signal at a high level, causing SEL to close; T 03At a certain moment, the control circuit outputs the first transmission signal, the second transmission signal, and the fourth transmission signal at a high level, causing TX1, TX2, and TX4 to all close, and the control circuit transfers charge q1 to FD.

[0087] Step (4): After receiving charge q1, FD converts charge q1 into voltage signal X1 according to gain D3 and outputs it to SF; SF outputs voltage follower signal SF1 according to voltage signal X1; since SEL is closed, SF can output SF1 to the readout circuit through SEL; the readout circuit can determine the actual output voltage value of pixel circuit 30 according to SF0 and SF1; wherein, gain D3 (an example of the first gain below) can be determined by capacitor C1 and LOFIC.

[0088] Step (5): At T 03 After time T and at time T 04 Before time T, the control circuit outputs a third transmission signal at a high level, causing TX3 to close; after TX3 closes, at time T... 04 At a certain moment, the control circuit outputs a first transmission signal, a second transmission signal, a third transmission signal, and a reset signal at a high level, causing TX1, TX2, TX3, and RST to close, and transferring charge q1 to FD.

[0089] Step (6): After receiving charge q1, FD converts charge q1 into a voltage signal V according to gain D4. 01 The signal is output to SF; SF outputs the signal according to the voltage signal V. 01 The output voltage follows the signal SF2; since SEL is closed, SF can output SF2 to the readout circuit through SEL; the readout circuit can determine the actual output voltage value of the pixel circuit 30 based on SF0 and SF2; among which, the gain D4 (i.e., another example of the first gain below) can be determined by capacitor C1, capacitor Cs and lofic.

[0090] It should be noted that the control circuit can also output voltage to follow the signal using gains other than D3 and D4. For example, when both TX3 and TX4 are open, the control circuit can output voltage to follow the signal using gain D1, where gain D1 can be determined by capacitor C1. As another example, when TX3 is closed and TX4 is open, the control circuit can output voltage to follow the signal using gain D2, where gain D2 can be determined by capacitors Cs and C1.

[0091] For example, such as Figure 1GAs shown, the pixel circuits included in the above pixel circuit array can also have the structure shown in pixel circuit 40; compared with the structure of pixel circuit 10, the position of the reset signal RST in pixel circuit 40 has changed, that is, the reset signal RST is connected in parallel with TX1.

[0092] Combination Figure 1G The schematic diagram of the pixel circuit 40 shown illustrates the working timing flow of each transistor in the pixel circuit 40, as follows: Figure 1H As shown:

[0093] Step (1): T 11 At a certain moment, the control circuit outputs a first transmission signal, a second transmission signal, and a reset signal at a high level, causing the PD and FD to be reset. The first transmission signal controls the closing and opening of TX1, the second transmission signal controls the closing and opening of TX2, and the reset signal controls the closing and opening of RST. Subsequently, the control circuit sets the first transmission signal to a low level, causing TX1 to open. The control circuit then controls the pixel circuit 40 (i.e., an example of multiple pixel circuits) to start exposure, that is, the PD starts collecting photons and converting the photons into charge q2, which is stored in Cap.

[0094] It should be noted that in T 11 Before the specified time, the control circuit can close TX2 and RST, resetting FD. After FD is reset, the control circuit can close SF and SEL, allowing FD to output a voltage follower signal SF to the readout circuit via SF and SEL. 00 The SF 00 This can be understood as a reference voltage.

[0095] Step (2): T 22 At that moment, the control circuit outputs a first transmission signal at a high level, causing TX1 to close again, and the control circuit controls the pixel circuit 40 to stop exposure.

[0096] Step (3): At T 33 Before the specified time, the control circuit outputs a row selection signal at a high level, causing SEL to close; T 33 At that moment, the control circuit outputs a second transmission signal at a high level, causing TX2 to close, and the control circuit controls the transfer of charge q2 in Cap to FD.

[0097] Step (4): After receiving charge q2, FD converts charge q2 into a voltage signal X2 according to gain D1 and outputs it to SF; SF outputs a voltage follower signal SF based on the voltage signal X2. 01 Since SEL is already closed, SF can output the SF to the readout circuit through SEL. 01 The readout circuit can be based on SF. 00and SF 01 Determine the actual output voltage value of the pixel circuit 40; where the gain D1 can be determined by capacitor C1.

[0098] For example, such as Figure 1I As shown, the pixel circuits included in the above-mentioned pixel circuit array can also have the structure shown in pixel circuit 50; compared to the structure of pixel circuit 40, pixel circuit 50 will Figure 1G The capacitor Cap in the PD is replaced by a transfer transistor TX5. TX5 not only has a charge storage function similar to the original Cap, but also has a switching function, which can control the charge transfer in the PD. The control circuit can adjust the operating voltage of TX5 to ensure that the charge in the PD is fully transferred (or completely transferred).

[0099] Combination Figure 1I The schematic diagram of the pixel circuit 50 shown illustrates the working timing flow of each transistor in the pixel circuit 50, as follows: Figure 1J As shown:

[0100] Step (1): T a At a certain moment, the control circuit outputs a first transmission signal, a second transmission signal, a fifth transmission signal, and a reset signal at a high level, thereby resetting the PD and FD. The first transmission signal controls the closing and opening of TX1, the second transmission signal controls the closing and opening of TX2, the fifth transmission signal controls the closing and opening of TX5, and the reset signal controls the closing and opening of RST. Subsequently, the control circuit sets the first transmission signal to a low level, controlling the pixel circuit 50 (another example of multiple pixel circuits) to start exposure, that is, the PD starts collecting photons and converting the photons into charge q3, which is stored in TX5.

[0101] It should be noted that in T a Before the specified time, the control circuit can close TX2, TX5, and RST, thus resetting the FD. After the FD is reset, the control circuit controls SF and SEL to close, and the FD can output a voltage follower signal SF to the readout circuit through SF and SEL. m The SF m This can be understood as a reference voltage.

[0102] Step (2): T b At a certain moment, the control circuit outputs the first and fifth transmission signals at a high level, causing TX1 and TX5 to close again, and the control circuit controls the pixel circuit 50 to stop exposure.

[0103] Step (3): At T c Before the specified time, the control circuit outputs a row selection signal at a high level, causing SEL to close; T cAt that moment, the control circuit outputs a second transmission signal at a high level, causing TX2 to close, and the control circuit controls the transfer of charge q3 in Cap to FD.

[0104] Step (4): After receiving charge q3, FD converts charge q3 into a voltage signal X3 according to gain D1 and outputs it to SF; SF outputs a voltage follower signal SF based on the voltage signal X3. n Since SEL is already closed, SF can output the SF to the readout circuit through SEL. n The readout circuit can be based on SF. m and SF n Determine the actual output voltage value of the pixel circuit 50; where the gain D1 can be determined by capacitor C1.

[0105] It should be noted that Cap in the above circuit can also be replaced with other devices with storage functions, such as... Figure 1I The transfer transistor TX5 in the embodiment is not limited to this.

[0106] The above has introduced some of the terminology involved in this application. The following section, in conjunction with practical application scenarios, introduces the technical problems that this application needs to solve.

[0107] As described in the background technology description, the GS image sensor can start the exposure and readout processing of the RS image (i.e., the second frame image) immediately after generating the GS image (such as the first frame image). However, since the GS image sensor still reads the GS image line by line, and the exposure and readout processing of the RS image can only begin after all lines have been read out, this does not substantially improve the output frame rate of the GS image and the RS image. Therefore, it is difficult to meet the user's needs for high frame rate application scenarios.

[0108] To this end, this application proposes a method for generating images. This method begins to expose RS images (such as the first RS image) before the GS image sensor generates the electrical signal corresponding to the GS image (such as the first GS image) line by line. This causes the GS image and RS image to overlap in the generation sequence, thereby effectively saving frame output time and improving the frame rate of the GS image sensor when outputting GS images and RS images.

[0109] It should be noted that the above-described method for generating images can be applied to electronic devices.

[0110] In some embodiments, the electronic device may be a GS image sensor, a device including a GS image sensor, or an imaging system including a GS image sensor.

[0111] When the electronic device is a GS image sensor, the GS image sensor can perform the above-described method for generating images.

[0112] When an electronic device includes a GS image sensor, the electronic device can perform the above-described method for generating images through the GS image sensor.

[0113] When the electronic device is an imaging system including a GS image sensor, the imaging system can perform the above-described method for generating images through the GS image sensor.

[0114] Optionally, the imaging system may further include a processing circuit, which can act as a processor. The imaging system can control the GS image sensor to perform the image generation method through the processing circuit. For example, when the imaging system is in the shooting state, the processing circuit can control the GS image sensor to perform the above-mentioned image generation method.

[0115] Optionally, the imaging system may further include a processing circuit and a memory (or storage unit), wherein the processing circuit can act as a processor, and the imaging system can control the GS image sensor to execute the method of generating images through the processing circuit; the memory is connected to the GS image sensor and is used to store image data processed by the GS image sensor.

[0116] Optionally, the imaging system may also include a communication unit, which can serve as a communication interface to enable communication between the imaging system and external devices.

[0117] In other embodiments, the above-mentioned electronic device may be a terminal device with image processing function (hereinafter referred to as terminal device) or an image processing server, etc., and the embodiments of this application do not limit it.

[0118] The aforementioned terminal device with image processing capabilities can also be called user equipment (UE), which can be a surveillance camera, dashcam, camcorder, mobile phone, laptop, tablet, wearable device, virtual reality (VR) device, augmented reality (AR) device, etc. This application does not limit the specific type of terminal device.

[0119] In order to better understand the embodiments of this application, Figure 2 A schematic diagram of the structure of an electronic device 100 applicable to this application is shown.

[0120] Electronic device 100 may include processor 110, external memory interface 120, internal memory 121, universal serial bus (USB) connector 130, charging management module 140, power management module 141, battery 142, antenna 1, antenna 2, mobile communication module 150, wireless communication module 160, display screen 170, and camera 180, etc.

[0121] The processor 110 may include one or more processing units, such as an application processor (AP), a modem processor, a graphics processing unit (GPU), an image signal processor (ISP), a controller, a digital signal processor (DSP), a baseband processor, etc. These different processing units may be independent devices or integrated into one or more processors.

[0122] In some embodiments, the processor 110 can control the GS image sensor to generate GS images (such as a first GS image) and RS images (such as a first RS image and a second RS image, etc.).

[0123] The processor 110 can generate operation control signals based on the instruction opcode and timing signals to control the instruction fetching and execution.

[0124] The processor 110 may also include a memory for storing instructions and data. In some embodiments, the memory in the processor 110 may be a cache memory. This memory can store instructions or data that the processor 110 has used or that are used frequently. If the processor 110 needs to use the instruction or data, it can directly retrieve it from this memory. This avoids repeated accesses, reduces the waiting time of the processor 110, and thus improves the efficiency of the system.

[0125] In some embodiments, the processor 110 may include one or more interfaces. These interfaces may include an inter-integrated circuit (I2C) interface, an inter-integrated circuit sound (I2S) interface, a pulse code modulation (PCM) interface, a universal asynchronous receiver / transmitter (UART) interface, a mobile industry processor interface (MIPI), a general-purpose input / output (GPIO) interface, a subscriber identity module (SIM) interface, and / or a universal serial bus (USB) interface, etc. The processor 110 can connect to modules such as wireless communication modules and displays through at least one of these interfaces. For example, MIPI can be used to connect the processor 110 to peripheral devices such as a display screen 170 and a camera 180. MIPI includes a camera serial interface (CSI), a display serial interface (DSI), etc. In some embodiments, the processor 110 can communicate with the camera 180 via CSI to realize the shooting function of the electronic device 100. The processor 110 can communicate with the display screen 170 via DSI to realize the display function of the electronic device 100.

[0126] It is understood that the interface connection relationships between the modules illustrated in the embodiments of this application are merely illustrative and do not constitute a structural limitation on the electronic device 100. In other embodiments of this application, the electronic device 100 may also employ different interface connection methods or combinations of multiple interface connection methods as described in the above embodiments.

[0127] USB connector 130 is a USB standard-compliant interface used to connect electronic device 100 and peripheral devices. Charging management module 140 receives charging input from a charger, which can be either a wireless or wired charger. Power management module 141 connects to battery 142, and charging management module 140 connects to processor 110. Power management module 141 receives input from battery 142 and / or charging management module 140 to power processor 110, internal memory 121, display screen 170, and wireless communication module 160, etc. In some embodiments, power management module 141 and charging management module 140 may also be housed in the same device.

[0128] The wireless communication function of electronic device 100 can be realized through antenna 1, antenna 2, mobile communication module 150, wireless communication module 160, modem processor and baseband processor, etc.

[0129] The mobile communication module 150 can provide solutions for wireless communication, including 2G / 3G / 4G / 5G, applied to the electronic device 100. The mobile communication module 150 may include at least one filter, switch, power amplifier, low noise amplifier (LNA), etc. In some embodiments, at least some functional modules of the mobile communication module 150 may be housed in the same device as at least some modules of the processor 110.

[0130] The wireless communication module 160 can provide wireless communication solutions for use on electronic devices 100, including wireless local area networks (WLAN) (such as WiFi hotspots), Bluetooth (BT), and near field communication (NFC) technologies.

[0131] The external storage interface 120 can be used to connect an external memory card, such as a Micro SD card, to expand the storage capacity of the electronic device 100. The external memory card communicates with the processor 110 through the external storage interface 120 to perform data storage functions. For example, images, videos, and other files can be saved on the external memory card, or images, videos, and other files can be transferred from the electronic device 100 to the external memory card.

[0132] Internal memory 121 can be used to store computer executable program code, including instructions. Internal memory 121 may include a program storage area and a data storage area. The program storage area may store the operating system, at least one application required for a function (e.g., a camera application), etc. The data storage area may store data created during the use of electronic device 100 (e.g., a first GS image, etc.). In addition, internal memory 121 may include high-speed random access memory, and may also include non-volatile memory, such as at least one disk storage device, flash memory device, universal flash storage (UFS), etc. Processor 110 executes various functional methods or data processing of electronic device 100 by running instructions stored in internal memory 121 and / or instructions stored in memory disposed in the processor.

[0133] Display screen 170 is used to display images (such as a first GS image), videos, etc. Display screen 170 includes a display panel. The display panel may be a liquid crystal display (LCD), an organic light-emitting diode (OLED), etc. In some embodiments, electronic device 100 may include one or more display screens 170.

[0134] Electronic device 100 can perform shooting functions through ISP, camera 180, video codec, GPU, display screen 170 and application processor.

[0135] The ISP (Image Signal Processor) is used to process data fed back from the camera 180. For example, when taking a picture, the shutter is opened, and light is transmitted through the lens to the pixel circuit array of the image sensor of the camera 180. Each pixel circuit in the pixel circuit array (such as pixel circuit 10) converts the light signal into an electrical signal (or photons into charges and electrical signals), and outputs it to the ISP for processing (which can be understood as a readout circuit). The ISP converts the electrical signal into a digital signal. The ISP can also perform algorithmic optimization of image noise, brightness, and skin tone. The ISP can also optimize parameters such as exposure and color temperature of the shooting scene. In some embodiments, the ISP can be set in the camera 180.

[0136] Camera 180 may include a GS image sensor for capturing still images or videos. An object is projected onto the pixel circuit array of the GS image sensor through a lens, generating an optical image. The pixel circuits in the pixel circuit array may be charge-coupled devices (CCDs) or complementary metal-oxide-semiconductor (CMOS). The pixel circuits convert optical signals into electrical signals, which are then passed to an ISP for conversion into digital signals. The ISP outputs the digital signals to a DSP for processing. The DSP converts the digital signals into image signals in standard RGB, YUV, or other formats. In some embodiments, electronic device 100 may include one or more cameras 180, for example, it may include both a front-facing camera and a rear-facing camera.

[0137] It is understood that the structures illustrated in the embodiments of this application do not constitute a specific limitation on the electronic device 100. In other embodiments of this application, the electronic device 100 may also include... Figure 2 More or fewer components, or combining some components, or splitting some components, or different component arrangements. Figure 2 The components can be implemented in hardware, software, or a combination of both.

[0138] The method for generating images provided in the embodiments of this application will be illustrated below with reference to the accompanying drawings.

[0139] like Figure 3 The diagram shown is a flowchart illustrating a method 300 for generating an image according to an embodiment of this application. This method 300 can be executed by a GS image sensor, an electronic device including the GS image sensor, or a chip system including the GS image sensor. The method 300 proposed in this application is executively described below using a GS image sensor as the executing entity, but this application does not limit the executing entity.

[0140] The above method 300 includes steps 301 to 305, which are described in detail below.

[0141] Step 301: The GS image sensor controls the first row pixel circuit and the last row pixel circuit to be exposed simultaneously, generating the first electrical signal and the second electrical signal.

[0142] The simultaneous exposure of the first and last row pixel circuits controlled by the GS image sensor can be understood as follows: the GS image sensor controls the first and last row pixel circuits to collect photons simultaneously, converts the photons collected by the first row pixel circuit into charge 1, and converts the photons collected by the last row pixel circuit into charge 2; then, a first electrical signal is generated based on charge 1, and a second electrical signal is generated based on charge 2.

[0143] The first electrical signal (or the second electrical signal) can be a first voltage signal (or a second voltage signal), or it can be a first current signal (or a second current signal) after voltage conversion; wherein, the first current signal (or the second current signal) can be a signal obtained by converting the first voltage signal (or the second voltage signal) through a certain circuit element (such as a resistor); in addition, the first electrical signal (or the second electrical signal) can also be a signal form that can be read by the GS image sensor and can be converted into a digital signal (or an analog signal) for subsequent processing. The specific signal form is not limited in the embodiments of this application.

[0144] It should be noted that the first and second electrical signals generated by the aforementioned GS image sensor can be used as carriers of exposure information for the GS image sensor to generate the first GS image in subsequent image processing.

[0145] It should also be noted that the aforementioned GS image sensor may include multiple rows of pixel circuits, which may include a first row of pixel circuits and a last row of pixel circuits. Of course, it may also include other intermediate row pixel circuits (such as a third row of pixel circuits, a fourth row of pixel circuits, etc.) in addition to the first row of pixel circuits and the last row of pixel circuits. This application embodiment does not limit this. The first row of pixel circuits is usually located at the top of the GS image sensor, that is, the first row of pixel circuits in the pixel circuit array of the GS image sensor. The last row of pixel circuits is usually located at the bottom of the GS image sensor, that is, the last row of pixel circuits in the pixel circuit array of the GS image sensor.

[0146] In GS exposure mode, the GS image sensor can control all row pixel circuits (such as the first row pixel circuit, the last row pixel circuit, and other intermediate row pixel circuits other than the first row pixel circuit and the last row pixel circuit) to start exposure (i.e. start collecting photons at the same time) at the same time and stop exposure (i.e. stop collecting photons at the same time) at the same time.

[0147] After the first row pixel circuit and the last row pixel circuit have completed exposure, the GS image sensor can store the charge generated by the exposure of the first row pixel circuit in the storage area (e.g., Cap) inside the first row pixel circuit, and store the photogenerated charge generated by the exposure of the last row pixel circuit in the storage area (e.g., Cap) inside the last row pixel circuit; then, the GS image sensor can perform an electrical signal conversion process row by row, that is, convert the stored charge into electrical signals (such as the first electrical signal and the second electrical signal).

[0148] For example, a GS image sensor can convert the charge generated by the exposure of the first row of pixel circuits into a first voltage signal (i.e., an example of a first electrical signal), and the charge generated by the exposure of the last row of pixel circuits into a second voltage signal (i.e., an example of a second electrical signal); the first and second voltage signals can then be read out by the readout circuitry inside the GS image sensor (e.g., ...). Figure 1A As shown, the readout circuit can generate a first GS image based on the first voltage signal and the second voltage signal.

[0149] Step 302: After the first electrical signal is generated, and before the second electrical signal is generated, the GS image sensor controls the first row pixel circuit to be exposed again to generate the third electrical signal.

[0150] The third electrical signal is the electrical signal generated after the first row of pixel circuits is exposed; the explanation of the third electrical signal can be found in the relevant description of the first electrical signal in step 301 above, and will not be repeated here.

[0151] The GS image sensor controls the first row of pixel circuits to re-expose and converts the photons collected by the first row of pixel circuits into charge 3; then, a third electrical signal is generated based on charge 3; the third electrical signal serves as a carrier of exposure information and can be used by the GS image sensor to generate the first RS image in subsequent image processing.

[0152] After the first row pixel circuit and the last row pixel circuit are exposed simultaneously, that is, after the GS image sensor achieves global exposure, electrical signals are generated row by row; for example, starting from the generation of the first electrical signal by the first row pixel circuit, electrical signals are generated row by row until the generation of the second electrical signal by the last row pixel circuit; after the generation of the first electrical signal and before the generation of the second electrical signal, the GS image sensor can control the first row pixel circuit to be exposed again; after the first row pixel circuit completes exposure, the GS image sensor can convert the charge 3 generated by the exposure of the first row pixel circuit (e.g., the photogenerated charge of the first row below) into an electrical signal, that is, convert the charge 3 into a third electrical signal; subsequently, the third electrical signal can be read out by the readout circuit inside the GS image sensor (e.g., ... Figure 1A As shown, the readout circuit can generate a first RS image based on the third electrical signal.

[0153] As can be seen from step 302, the GS image sensor begins the exposure processing of the first RS image before generating the first GS image (i.e., before generating the second electrical signal). This processing causes the first GS image and the first RS image to overlap in the generation sequence, effectively shortening the total time required for the GS image sensor to generate these two frames, thereby improving the overall output frame rate.

[0154] It should be noted that, in some embodiments, the exposure time of the first GS image may be less than the exposure time of the first RS image.

[0155] The exposure duration of the GS image can be understood as the time from when all pixel circuits of the GS image sensor (e.g., the first row pixel circuit, the last row pixel circuit, etc.) start exposure at the same time to when they end exposure at the same time; the exposure duration of the first RS image can be understood as the time required for the GS image sensor to start exposure from the first row pixel circuit and expose row by row until each row pixel circuit in all pixel circuits has completed exposure.

[0156] When generating the first GS image and the first RS image, the GS image sensor can use a shorter exposure time for the first GS image than a preset time (e.g., 2ms), and a longer exposure time for the first RS image than a preset time (e.g., 2ms). This allows the GS image sensor to generate the first GS image with a shorter exposure time in some scenarios that require capturing dynamic changes (or extreme lighting conditions), thereby obtaining clearer and more accurate contour or dynamic information, while using a longer exposure time for the first RS image can capture more details or depth information.

[0157] Step 303: The GS image sensor generates a first GS image based on the first electrical signal and the second electrical signal.

[0158] After the GS image sensor generates the first electrical signal and the second electrical signal, it can output these two signals to the readout circuit inside the GS image sensor. The readout circuit can first perform analog-to-digital conversion and other processing on the two electrical signals to generate the first digital signal and the second digital signal. Then, it generates the first GS image based on the first digital signal and the second digital signal.

[0159] For example, after a GS image sensor synchronously exposes all row pixel circuits (such as the first row pixel circuit, the second row pixel circuit, ..., the last row pixel circuit), it can store the charge generated by the exposure of all row pixel circuits in the storage area (such as Cap) within each row pixel circuit. Subsequently, the GS image sensor can perform an electrical signal conversion process row by row, that is, convert the stored charge into electrical signals. Specifically, the GS image sensor can convert the charge 1 generated by the exposure of the first row pixel circuit into voltage signal 1 (i.e., an example of the first electrical signal), the charge 2 generated by the exposure of the second row pixel circuit into voltage signal 2, ..., and the charge X generated by the exposure of the last row pixel circuit into voltage signal X (i.e., an example of the second electrical signal). Voltage signals 1, 2, ..., and X can then be read out by the readout circuit of the GS image sensor (such as... Figure 1A As shown, the readout circuit can first perform analog-to-digital conversion and other processing on voltage signal 1, voltage signal 2, ..., and voltage signal X respectively to generate the corresponding first digital signal, second digital signal, ..., and X digital signal; then generate the first GS image based on the first digital signal, second digital signal, ..., and X digital signal.

[0160] Step 304: The GS image sensor controls the trailing pixel circuit to re-expose, generating a fourth electrical signal.

[0161] The fourth electrical signal is generated after the tail pixel circuit is exposed; the explanation of the fourth electrical signal can be found in the relevant description of the second electrical signal in step 301 above, and will not be repeated here.

[0162] The GS image sensor controls the trailing pixel circuit to re-expose and converts the photons collected by the trailing pixel circuit into charge 4; then, a fourth electrical signal is generated based on charge 4; the fourth electrical signal serves as the carrier of exposure information and can be used by the GS image sensor to generate the first RS image in subsequent image processing.

[0163] It should be noted that after the GS image sensor re-exposes the first row of pixel circuits in step 302, it can control the tail row of pixel circuits to re-expose. After the tail row of pixel circuits completes its exposure, the GS image sensor can convert the charge 4 generated by the exposure of the tail row of pixel circuits (e.g., the photogenerated charge of the second row below) into an electrical signal, that is, convert the charge 4 generated by the exposure into a fourth electrical signal. Subsequently, the fourth voltage signal can be read out by the readout circuit inside the GS image sensor (e.g., ...). Figure 1A As shown, the readout circuit can generate the first RS image based on the fourth electrical signal.

[0164] Step 305: The GS image sensor generates a first RS image based on the third electrical signal and the fourth electrical signal.

[0165] After the GS image sensor generates the third and fourth electrical signals, these two signals can be output to the readout circuit inside the GS image sensor. The readout circuit can first perform analog-to-digital conversion and other processing on these two electrical signals to generate the third and fourth digital signals. Then, the first RS image is generated based on the third and fourth digital signals.

[0166] For example, the GS image sensor uses RS exposure to sequentially expose all row pixel circuits (such as the first row pixel circuit, the second row pixel circuit, ..., the last row pixel circuit) row by row. After each row exposure, the charge generated by the single row pixel circuit can be converted into an electrical signal, that is, the charge generated by the single row pixel circuit exposure can be converted into an electrical signal. Specifically, the GS image sensor can convert the charge 11 generated by the first row pixel circuit exposure into a voltage signal 11 (i.e., an example of the third electrical signal), the charge 22 generated by the second row pixel circuit exposure into a voltage signal 22, ..., and the charge XX generated by the last row pixel circuit exposure into a voltage signal XX (i.e., an example of the fourth electrical signal); voltage signals 11, 22, ..., and XX can then be read out by the GS image sensor's readout circuit (e.g., ...). Figure 1A As shown, the reading circuit can first perform analog-to-digital conversion and other processing on voltage signals 11, 22, ..., and XX respectively to generate corresponding digital signals 11, 22, ..., and XX; and then generate the first RS image based on the digital signals 11, 22, ..., and XX.

[0167] Therefore, in method 300, the GS image sensor can control the first row pixel circuit to be exposed again after the first electrical signal is generated and before the second electrical signal is generated, so as to generate a third electrical signal, causing the first GS image and the first RS image to overlap in the generation sequence, thereby effectively improving the frame rate of the GS image and RS image output by the GS image sensor, and meeting the user's needs for high frame rate application scenarios (such as fast motion capture, high frame rate video shooting, etc.).

[0168] Method 300 was introduced above; below, we will combine it with... Figures 4A to 4B Method 300 will be further explained. It should be noted that... Figures 4A to 4B In this example, the method 300 is illustrated by taking the GS image sensor as an example to generate two images of different types (such as the first GS image and the first RS image) by using the GS exposure mode and the RS exposure mode respectively.

[0169] In some embodiments, such as Figure 4AAs shown, at time T0, the GS image sensor can control all row pixel circuits (such as the first row pixel circuit, the second row pixel circuit, ..., the nth row pixel circuit and the last row pixel circuit) to perform a reset operation; at time T1, after the reset operation is completed, the GS image sensor can control all row pixel circuits to start exposure, and the exposure duration is S1 (i.e., the time difference between T2 and T1); during the exposure stage, the GS image sensor can control each row pixel circuit to store the charge generated by the exposure in its respective storage area; at time T2, after the exposure is completed, the GS image sensor can transfer the charge in the storage area of ​​the first row pixel circuit (e.g., transfer it to...). Figure 1A In the first GS image sensor, at time T3, the GS image sensor can convert the transferred charge into an electrical signal to generate a voltage signal V1 (an example of the first electrical signal). At time T4, after the voltage signal V1 is generated, the GS image sensor can immediately control the first row pixel circuit to perform a reset operation again, and at time T5, control the first row pixel circuit to be exposed again for an exposure time of S2 (the time difference between T6 and T5). At time T6, after the exposure is completed, the GS image sensor can convert the charge generated by the first row pixel circuit during the exposure stage into an electrical signal to generate a voltage signal V2 (an example of the third electrical signal). This process is repeated. This process causes the first GS image and the first RS image to overlap in the generation sequence, which can effectively save frame output time.

[0170] In other embodiments, such as Figure 4B As shown, the exposure start time of the first RS image is flexible. It does not necessarily start immediately after the GS image sensor generates the first electrical signal (i.e., the first electrical signal corresponding to the first GS image), but can start at any time (e.g., time T11) after the generation of the m-th electrical signal (i.e., the m-th electrical signal corresponding to the first GS image) and before the generation of the second electrical signal (i.e., the last electrical signal corresponding to the first GS image), where the m-th electrical signal is the electrical signal generated by the m-th row pixel circuit, and m is an integer greater than 1 and less than n+1.

[0171] In some other embodiments, the type of image initially output by the GS image sensor is flexible. For example, such as... Figure 4A and Figure 4B As shown, the GS image sensor can first generate a first GS image and then generate a first RS image; or, as... Figure 5 As shown, the GS image sensor can first generate an RS image, and then generate a first GS image and a first RS image.

[0172] In some embodiments, the GS image sensor can sequentially output one GS image (e.g., a first GS image) and two RS images (e.g., a first RS image and a second RS image), enabling the GS image sensor to provide flexible and high-quality image capture capabilities in various complex scenes. The exposure times of the two RS images can be equal or unequal. It should be noted that the generation sequence of the first GS image and the two RS images can overlap, as detailed below. Figures 6A to 6B The example shown.

[0173] For example, the method 300 described above may further include:

[0174] Step S01: After the third electrical signal is generated and before the fourth electrical signal is generated, the GS image sensor controls the first row pixel circuit to be exposed again to generate the fifth electrical signal.

[0175] The fifth electrical signal is also an electrical signal generated after the first row of pixel circuits is exposed; the explanation of the fifth electrical signal can be found in the relevant description of the first electrical signal in step 301 above, and will not be repeated here.

[0176] The GS image sensor controls the first row of pixel circuits to re-expose and converts the photons collected by the first row of pixel circuits into charge 5; then, a fifth electrical signal is generated based on charge 5; the fifth electrical signal serves as a carrier of exposure information and can be used by the GS image sensor to generate a second RS image in subsequent image processing.

[0177] After the third electrical signal is generated and before the fourth electrical signal is generated, which can be understood as before generating the first RS image, the GS image sensor controls the first row pixel circuit to re-expose. After the first row pixel circuit completes exposure, the GS image sensor can convert the charge 5 generated by the exposure of the first row pixel circuit into a fifth electrical signal. The fifth electrical signal can then be read out by the readout circuit inside the GS image sensor (e.g., ...). Figure 1A As shown, the readout circuit can generate a second RS image based on the fifth electrical signal.

[0178] As can be seen from step S01, the GS image sensor has already started the exposure processing of the second RS image before completing the generation of the first RS image. This processing causes the generation time of the first RS image and the second RS image to overlap, effectively shortening the total time required for the GS image sensor to generate these two RS images, thereby improving the overall output frame rate.

[0179] Step S02: The GS image sensor controls the trailing pixel circuit to re-expose, generating the sixth electrical signal;

[0180] The sixth electrical signal is also an electrical signal generated after the tail pixel circuit is exposed; the explanation of the sixth electrical signal can be found in the relevant description of the second electrical signal in step 301 above, and will not be repeated here.

[0181] The GS image sensor controls the trailing pixel circuit to re-expose and converts the photons collected by the trailing pixel circuit into charge 6; then, a sixth electrical signal is generated based on charge 6; the sixth electrical signal serves as the carrier of exposure information and can be used by the GS image sensor to generate a second RS image in subsequent image processing.

[0182] It should be noted that after the GS image sensor re-exposes the first row of pixel circuits in step S01, it can control the tail row of pixel circuits to re-expose; after the tail row of pixel circuits completes exposure, the GS image sensor can convert the charge 6 generated by the exposure of the tail row of pixel circuits into a sixth electrical signal; the sixth electrical signal can then be read out by the internal readout circuit of the GS image sensor (e.g., ...). Figure 1A As shown, the readout circuit can generate a second RS image based on the sixth electrical signal.

[0183] Step S03: The GS image sensor generates a second RS image based on the fifth and sixth electrical signals.

[0184] After the GS image sensor generates the fifth and sixth electrical signals, these two signals can be output to the readout circuit inside the GS image sensor. The readout circuit can first perform analog-to-digital conversion and other processing on these two electrical signals to generate the fifth and sixth digital signals. Then, the second RS image is generated based on the fifth and sixth digital signals.

[0185] For example, a GS image sensor can use RS exposure to sequentially expose all row pixel circuits (such as the first row pixel circuit, the second row pixel circuit, ..., the last row pixel circuit) row by row. After each row exposure, the charge generated by the single row pixel circuit can be converted into an electrical signal, that is, the charge generated by the single row pixel circuit exposure can be converted into an electrical signal. Specifically, the GS image sensor can convert the charge O1 generated by the first row pixel circuit exposure into a voltage signal O1 (i.e., an example of the fifth electrical signal), the charge O2 generated by the second row pixel circuit exposure into a voltage signal O2, ..., and the charge OX generated by the last row pixel circuit exposure into a voltage signal OX (i.e., an example of the sixth electrical signal). The voltage signals O1, O2, ..., and OX can then be read out by the readout circuit inside the GS image sensor (e.g., ...). Figure 1AAs shown, the reading circuit can first perform analog-to-digital conversion and other processing on voltage signals 01, 02, ..., and 0X respectively to generate corresponding digital signals 01, 02, ..., and 0X; then generate a second RS image based on digital signals 01, 02, ..., and 0X.

[0186] In some applications, it may be necessary to utilize information from long-exposure dark areas in RS images to enhance information from short-exposure dark areas in GS images. Therefore, the GS image sensor can generate one GS image (such as the first GS image) and two RS images (such as the first RS image and the second RS image) to facilitate subsequent image enhancement processing. In addition, after the third electrical signal is generated and before the fourth electrical signal is generated, the GS image sensor controls the first row pixel circuit to re-explode, generating the fifth electrical signal. This causes the second RS image and the first RS image to overlap in the generation sequence. This not only saves frame output time and increases the frame rate, but also meets the user's demand for high frame rates in specific scenarios.

[0187] It should be noted that, in some embodiments, the exposure time of the second RS image can be greater than the exposure time of the first RS image.

[0188] The exposure time of the second RS image can be understood as the time it takes for the GS image sensor to expose the image line by line, starting from the first row of pixel circuits, until each row of pixel circuits in all pixel circuits has completed its exposure.

[0189] In some scenarios, when generating RS images, the GS image sensor can use an exposure time of 1 for the first RS image and an exposure time of 2 for the second RS image, where the exposure time 1 is shorter than the exposure time 2. The first RS image with an exposure time of 1 can capture detailed information in bright areas, reduce motion blur, and ensure the clarity of moving objects. The second RS image with an exposure time of 2 can increase the amount of light collected, improve the visibility of static details, and effectively reduce noise in dark areas.

[0190] It should be noted that the first RS image obtained using an exposure time of 1 can also be called a short exposure RS image, and the second RS image obtained using an exposure time of 2 can also be called a long exposure RS image.

[0191] For example, in scenarios requiring the simultaneous capture of both dynamic and static details, the GS image sensor can achieve high dynamic range image capture by generating short-exposure RS images (such as the first RS image) and long-exposure RS images (such as the second RS image). For instance, in autonomous driving scenarios, combining short and long-exposure RS images can capture different aspects of image detail; for example, short-exposure RS images can be used to capture fast-moving objects (such as vehicles and pedestrians) ahead to ensure safety, while long-exposure RS images can be used to capture more static details (such as road signs and traffic signs). Through subsequent image fusion processing (such as fusing the short and long-exposure RS images), a comprehensive image can be generated that retains details in bright areas while clearly displaying information in darker regions. This is significant for improving image quality and enhancing the visual experience.

[0192] In some other embodiments, when generating RS images, the GS image sensor may use an exposure duration of 01 for the first RS image and an exposure duration of 02 for the second RS image, wherein the exposure duration of 02 is less than the exposure duration of 01.

[0193] For example, in environments with significant light variations, the GS image sensor can generate two RS images with different exposure times. For instance, in nighttime or low-light scenes, the GS image sensor can use exposure time 01 to capture sufficient light information to generate the first RS image, ensuring that the first RS image still has rich details and clear outlines in low-light environments. Subsequently, exposure time 02 is used to capture some sudden dynamic events or fast-moving objects to generate the second RS image, in order to avoid motion blur and retain key details.

[0194] The method of generating a set of long and short exposure RS images by combining two exposure methods with GS image sensors can not only improve the overall quality of the fused image, but also support image capture under various complex lighting conditions.

[0195] In other embodiments, the exposure duration of the second RS image may also be equal to the exposure duration of the first RS image.

[0196] In some applications, GS image sensors can generate two RS images with the same exposure time. This provides data redundancy, aiding image processing algorithms in more accurate image analysis and reconstruction. For example, comparing two RS images allows for motion detection, image stabilization, or depth estimation. Furthermore, while GS image sensors already possess good dynamic range performance, under extreme lighting conditions, combining two RS images taken at different times (despite the same exposure time, they may capture different information due to changes in scene lighting) can further extend the dynamic range and improve image quality. Finally, in scenarios requiring high frame rate shooting, GS image sensors can increase the effective frame rate by continuously generating two RS images, thus capturing dynamic scenes more smoothly.

[0197] For example, in applications that require capturing high-speed motion scenes, such as live sports broadcasts and action movie shooting, the GS image sensor can first generate a GS image to ensure that a distortion-free instant is captured, and then generate two RS images with the same exposure time to capture information such as the athlete's motion trajectory.

[0198] The following description, in conjunction with the accompanying drawings and embodiments, further illustrates how the GS image sensor sequentially generates one GS image and two RS images.

[0199] For example, such as Figure 6A As shown, the GS image sensor can start controlling the first row pixel circuit to re-expose after generating the first electrical signal, generating the third electrical signal (i.e., the third electrical signal used to generate the first RS image); similarly, the GS image sensor can start controlling the tail pixel circuit to re-expose after generating the second electrical signal, generating the fourth electrical signal (i.e., the fourth electrical signal used to generate the first RS image), and so on, until all electrical signals corresponding to the first GS image and all electrical signals corresponding to the first RS image are generated; from Figure 6A It can be seen that the GS image sensor overlaps the generation timing of the first GS image and the first RS image, which helps save generation time for both GS and RS images. Furthermore, the GS image sensor can also start controlling the first row of pixel circuits to re-expose after generating the third electrical signal, generating the fifth electrical signal (i.e., the fifth electrical signal used for generating the second RS image); similarly, the GS image sensor can start controlling the tail row of pixel circuits to re-expose after generating the fourth electrical signal, generating the sixth electrical signal (i.e., the sixth electrical signal used for generating the second RS image), and so on, until all electrical signals corresponding to the second RS image are generated; from Figure 6AIt can be seen that the GS image sensor overlaps in the generation time of the first RS image and the second RS image, which helps to save the generation time of two RS images.

[0200] Optionally, such as Figure 6B As shown, the GS image sensor can also start controlling the intermediate row pixel circuit to re-expose after generating intermediate row electrical signal 1 (i.e., the intermediate row electrical signal used to generate the first RS image) in an intermediate row pixel circuit other than the first row pixel circuit and the last row pixel circuit, for example, at time T1, to generate intermediate electrical signal 2 (i.e., the intermediate row electrical signal used to generate the second RS image), so that the first RS image and the second RS image overlap in the generation sequence, so as to save frame output time.

[0201] It should be noted that the above is just an example of how a GS image sensor can generate one frame of GS image and two frames of RS image sequentially. In practical applications, a GS image sensor can also generate one frame of GS image and L frames of RS image sequentially, where L is an integer greater than 2.

[0202] For example, such as Figure 6C As shown, during the generation of the first GS image (e.g., the first GS image), for example at time T1, the GS image sensor can begin processing the first RS image (e.g., the first RS image), so that the generation sequence of the first RS image and the first GS image can overlap. For example, after the GS image sensor generates the electrical signal X1 (e.g., the first electrical signal) corresponding to the first GS image in the X-row pixel circuit (e.g., the first row pixel circuit), it can control the X-row pixel circuit to re-expose and begin generating the electrical signal X2 (e.g., the third electrical signal) corresponding to the first RS image, thus... The generation timing of the first RS image overlaps with the generation timing of the first GS image. Similarly, after the Y-row pixel circuit generates the electrical signal Y1 corresponding to the Mth RS image (such as the first RS image), the GS image sensor can control the Y-row pixel circuit to re-expose and start generating the electrical signal Y2 corresponding to the M+1th RS image, so that the generation timing of the M+1th RS image overlaps with the generation timing of the Mth RS image. The Mth RS image and the M+1th RS image are two adjacent RS images in the first RS image and the Lth RS image.

[0203] It should also be noted that, in the case where the GS image sensor successively generates one frame of GS image and multiple frames of RS image, the multiple frames of RS image may overlap in generation time with each other, or some RS images may overlap in generation time. This application does not limit this.

[0204] In some other embodiments, the GS image sensor may also successively generate a GS image and two RS images with different generation gains, namely a first RS image and a second RS image.

[0205] For example, the method 300 described above can also generate two frames of RS images with different gains through the following steps:

[0206] Step S11: After the GS image sensor generates the third electrical signal and before the fourth electrical signal is generated, it can control the first row pixel circuit to generate the fifth electrical signal according to the first gain, wherein the first gain is different from the generation gain of the first RS image, and the first gain is the gain of the second RS image.

[0207] The fifth electrical signal is also an electrical signal generated after the first row of pixel circuits is exposed; the explanation of the fifth electrical signal can be found in the relevant description of the first electrical signal in step 301 above, and will not be repeated here.

[0208] The generation gain of the first RS image can be understood as a parameter used by the GS image sensor to adjust or amplify the image signal intensity of the first RS image. This parameter plays an important role in improving the image quality, sharpness, and contrast of the first RS image. For example, the generation gain of the first RS image can be as follows: Figure 14B Gain D1 in the middle.

[0209] The first gain can be understood as a parameter used by the GS image sensor to adjust or amplify the image signal intensity of the second RS image. This parameter plays an important role in improving the image quality, sharpness, and contrast of the second RS image.

[0210] The first gain is different from the generation gain of the first RS image. This can be understood as the first gain being greater than the generation gain of the first RS image, or it may be less than the generation gain of the first RS image.

[0211] For example, the first gain can be Figure 12B Gain 22 or Figure 1E D2 or Figure 13B The gain D3 or gain D4 in the middle.

[0212] It should be noted that when the GS image sensor outputs the fifth electrical signal, it does not need to re-control the first row pixel circuit for re-exposure. Instead, it shares the charge 3 generated by the first row pixel circuit exposure with the third electrical signal. The GS image sensor converts charge 3 into the third electrical signal according to the gain X (i.e., the generation gain of the first RS image). After the third electrical signal is generated, and before the fourth electrical signal is generated, charge 3 is converted into the fifth electrical signal through the first gain. The fifth electrical signal generated by the GS image sensor, as a carrier of exposure information, can be used by the GS image sensor to generate the second RS image in subsequent image processing.

[0213] Step S22: After generating the fourth electrical signal, the GS image sensor can control the trailing pixel circuit to generate the sixth electrical signal according to the first gain.

[0214] The sixth electrical signal is generated after the tail pixel circuit is exposed; the explanation of the sixth electrical signal can be found in the relevant description of the second electrical signal in step 301 above, and will not be repeated here.

[0215] It should be noted that when the GS image sensor outputs the sixth electrical signal, it does not need to re-control the trailing pixel circuit for re-exposure. Instead, it shares the charge 4 generated by the single exposure of the trailing pixel circuit with the fourth electrical signal. The GS image sensor converts charge 4 into the fourth electrical signal according to the gain X (i.e., the generation gain of the first RS image). After generating the fourth electrical signal, it converts charge 4 back into the sixth electrical signal through the first gain. The sixth electrical signal generated by the GS image sensor serves as a carrier of exposure information and can be used by the GS image sensor to generate the second RS image in subsequent image processing steps.

[0216] Step S33: The GS image sensor generates a second RS image based on the fifth and sixth electrical signals.

[0217] After the GS image sensor generates the fifth and sixth electrical signals, these two signals can be output to the readout circuit inside the GS image sensor. The readout circuit can first perform analog-to-digital conversion and other processing on these two electrical signals to generate the fifth and sixth digital signals. Then, the second RS image is generated based on the fifth and sixth digital signals.

[0218] The GS image sensor can convert the charge E1 generated by the exposure of the first row of pixel circuits into a voltage signal U1 (an example of the fifth electrical signal) according to a first gain; the charge E2 generated by the exposure of the second row of pixel circuits into a voltage signal U2 according to the first gain, ..., and the photogenerated charge En of the tail row of pixel circuits into a voltage signal Un (an example of the sixth electrical signal) according to the first gain; the voltage signals U1, U2, ..., and Un can then be read out by the readout circuit of the GS image sensor (e.g., ...). Figure 1A As shown, the reading circuit can first perform analog-to-digital conversion and other processing on the voltage signals U1, U2, ..., and Un respectively to generate the corresponding digital signals D1, D2, ..., and Dn; then, the second RS image is generated based on the digital signals D1, D2, ..., and Dn.

[0219] For example, such as Figure 7 As shown, after the first row of pixel circuits generates a first electrical signal, for example at time T1, the GS image sensor can start controlling the first row of pixel circuits to re-expose; at time T2, after the re-expose of the first row of pixel circuits ends, the GS image sensor can control the first row of pixel circuits to generate a third electrical signal using gain 1 and a fifth electrical signal using gain 2, where gain 1 is an example of the generation gain of the first RS image, and gain 2 is an example of the first gain; and so on, after the last row of pixel circuits generates a fourth electrical signal according to gain 1, the GS image sensor can generate a sixth electrical signal according to gain 2; wherein, the third and fourth electrical signals are used to generate the first RS image; and the fifth and sixth electrical signals are used to generate the second RS image.

[0220] Therefore, in some application scenarios, the GS image sensor can generate the first RS image and the second RS image sequentially during the generation of the first GS image, so that the first GS image and the two RS images overlap in generation time, thereby improving the overall output frame rate. In this process, the GS image sensor can use different gains to generate the two RS images, such as one frame using gain 1 to clearly preserve the details of the highlight area, and the other frame using gain 2 to accurately capture the details of the shadow area of ​​the image, where gain 2 is greater than gain 1. By merging these two RS images in the subsequent process, an RS image with a wider dynamic range and richer details can be generated.

[0221] In some other embodiments, prior to step 302, the method 300 may further include the following steps:

[0222] Step a: After the first electrical signal is generated and before the second electrical signal is generated, the GS image sensor can control the first row pixel circuit to generate a seventh electrical signal according to a second gain, which is different from the generation gain of the first GS image.

[0223] The seventh electrical signal is generated after the first row of pixel circuits is exposed; the explanation of the seventh electrical signal can be found in the relevant description of the first electrical signal in step 301 above, and will not be repeated here.

[0224] The generation gain of the first GS image can be understood as a parameter used by the GS image sensor to adjust or amplify the image signal intensity of the first GS image. This parameter plays an important role in improving the image quality, sharpness, and contrast of the first GS image.

[0225] The second gain can be understood as a parameter used by the GS image sensor to adjust or amplify the image signal intensity of the second GS image. This parameter plays an important role in improving the image quality, sharpness, and contrast of the second GS image.

[0226] It should be noted that the second gain is different from the generation gain of the first GS image. This can be understood as the first gain potentially being greater than, or less than, the generation gain of the first GS image. Furthermore, the second gain and the first gain can be the same or different; this application does not limit this. For example, the second gain could be... Figure 12C The gain is 22.

[0227] It should be noted that when the GS image sensor outputs the seventh electrical signal, it does not need to re-control the first row pixel circuit for re-exposure. Instead, it shares the charge 1 generated by the first row pixel circuit exposure with the first electrical signal. The GS image sensor converts charge 1 into the first electrical signal according to the generation gain of the first GS image. After the first electrical signal is generated and before the second electrical signal is generated, charge 1 is converted into the seventh electrical signal through the second gain. The seventh electrical signal generated by the GS image sensor serves as a carrier of exposure information and can be used by the GS image sensor to generate the second GS image in subsequent image processing.

[0228] Step b: After generating the second electrical signal, the GS image sensor can control the trailing pixel circuit to generate the eighth electrical signal according to the second gain. The seventh and eighth electrical signals are used to generate the second GS image.

[0229] The eighth electrical signal is generated by the exposure of the trailing pixel circuit; the explanation of the eighth electrical signal can be found in the relevant description of the second electrical signal in step 301 above, and will not be repeated here.

[0230] It should be noted that when the GS image sensor generates the eighth electrical signal, it does not need to re-control the trailing pixel circuit for re-exposure. Instead, it shares the charge 2 generated by the exposure of the trailing pixel circuit with the second electrical signal. The GS image sensor converts charge 2 into the second electrical signal according to the generation gain of the first GS image. After generating the second electrical signal, the GS image sensor converts charge 2 into the eighth electrical signal through the second gain. The eighth electrical signal generated by the GS image sensor serves as a carrier of exposure information and can be used by the GS image sensor to generate the second GS image in subsequent image processing.

[0231] After the GS image sensor generates the seventh and eighth electrical signals, these two signals can be output to the readout circuit inside the GS image sensor. The readout circuit can first perform analog-to-digital conversion and other processing on these two electrical signals to generate the seventh and eighth digital signals. Then, the second GS image is generated based on the seventh and eighth digital signals.

[0232] The GS image sensor can convert the charge E11 generated by the exposure of the first row of pixel circuits into a voltage signal V11 (an example of the seventh electrical signal) according to the second gain; the charge E22 generated by the exposure of the second row of pixel circuits into a voltage signal V22 according to the second gain; ..., the charge EXX generated by the exposure of the last row of pixel circuits into a voltage signal VXX (an example of the eighth electrical signal) according to the second gain; the voltage signals V11, V22, ..., and VXX can then be read out by the readout circuit of the GS image sensor (e.g., ...). Figure 1A As shown, the readout circuit can first perform analog-to-digital conversion and other processing on the voltage signals V11, V22, ..., and VXX respectively to generate the corresponding digital signals D11, D22, ..., and DXX; then generate the second GS image based on the digital signals D11, D22, ..., and DXX.

[0233] Therefore, in some application scenarios, in addition to generating two RS images with different gains (such as the first RS image and the second RS image), the GS image sensor can also generate two GS images with different gains. That is, one frame image (such as the first GS image) uses gain 01 to clearly preserve the details of the highlight areas of the image, while the other frame image (such as the second GS image) uses gain 02 (greater than gain 01) to accurately capture the details of the shadow areas of the image. By merging these two GS images in the subsequent process, a GS image with a wider dynamic range and richer detail can be generated.

[0234] In one possible implementation, before the GS image sensor controls the first row of pixel circuits to be re-exposed and generate the third electrical signal (i.e., before step 302), the method 300 further includes:

[0235] Step a): The GS image sensor resets the first row of pixel circuits.

[0236] Because some residual charge may remain in the first row pixel circuit after each exposure, and this residual charge may interfere with the next exposure, leading to a decrease in image quality, the GS image sensor can eliminate this residual charge by resetting the first row pixel circuit before controlling it to be exposed again, thus ensuring the accuracy of the next exposure.

[0237] In addition, the GS image sensor performs a reset operation on the first row of pixel circuits, which can initialize the first row of pixel circuits to a known state; this helps to ensure that the performance of the first row of pixel circuits is consistent before each exposure, thereby improving the stability and consistency of the output images of the GS image sensor.

[0238] In some embodiments, the GS image sensor resets the first row pixel circuit by resetting the photosensitive elements (such as photodiodes), charge storage regions (such as Cap or the transfer transistor TX5 mentioned above), and floating diffusion nodes in the first row pixel circuit, so that the first row pixel circuit is in a known and stable state before each exposure.

[0239] For example, such as Figure 1A As shown, taking the first row pixel circuit as an example, which includes multiple pixel circuits 10, when the GS image sensor controls the first row pixel circuit to perform a reset operation, each pixel circuit 10 in the first row pixel circuit can respond synchronously and execute the same reset process; for example, after a certain pixel circuit 10 receives a reset signal sent from the control circuit, it can immediately close TX1, TX2 and RST, so that PD, FD and Cap are all effectively reset.

[0240] In some embodiments, the first row pixel circuit may include a first photosensitive element, a first transfer transistor, a second transfer transistor, a first floating diffusion node, a first reset transistor, and a first selection transistor. The output terminal of the first photosensitive element is connected to the input terminal of the first transfer transistor, the output terminal of the first transfer transistor is connected to the input terminal of the second transfer transistor, the output terminal of the second transfer transistor is connected to both the first floating diffusion node and the input terminal of the first reset transistor, and the output terminal of the first reset transistor is connected to the input terminal of the first selection transistor.

[0241] The first photosensitive element may include multiple photosensitive devices, which are used by the first row pixel circuit to collect light and convert photons into electric charge (also known as photogenerated charge); the photosensitive device may be a photodiode, a phototransistor, or other devices that have the function of converting photons into electric charge, and the embodiments of this application do not limit this.

[0242] The first transfer transistor may include one or more transfer transistors TX; the GS image sensor can control the first photosensitive element to transfer the generated charge to the first charge storage area (such as Cap above) through the first transfer transistor; wherein, the output terminal of the first photosensitive element and the input terminal of the first transfer transistor can be directly connected or indirectly connected (for example, connected through some device in between), and this application embodiment does not limit this.

[0243] Furthermore, the output terminal of the first transfer transistor and the input terminal of the second transfer transistor can be directly connected or indirectly connected (for example, connected through some device in between), and this application embodiment does not limit this.

[0244] The second transfer transistor may also include one or more transfer transistors TX; the GS image sensor can control the transfer of charge from the first charge storage area to the first floating diffusion node through the second transfer transistor; wherein, the output terminal of the second transfer transistor and the input terminal of the first floating diffusion node can be directly connected or indirectly connected (for example, connected through some device in between), and this application embodiment does not limit this.

[0245] The first floating diffusion node may include one or more floating diffusion nodes; the GS image sensor can receive charge from the first charge storage area through the first floating diffusion node and convert the charge into an electrical signal.

[0246] The first reset transistor may include one or more reset transistors; the GS image sensor can reset the first photosensitive element, the first charge storage area and the first floating diffusion node through the first reset transistor; wherein, the output terminal of the second transfer transistor and the input terminal of the first reset transistor can be directly connected or indirectly connected (for example, connected through some device in between), and the embodiments of this application do not limit this.

[0247] The first selection transistor may include one or more selection transistors SEL; the GS image sensor can determine the order of output electrical signals of the single-row pixel circuit (such as the first row pixel circuit) by controlling the first selection transistor; the output terminal of the first reset transistor and the input terminal of the first selection transistor can be directly connected or indirectly connected (for example, connected in the middle through some device (such as a source follower)). This application embodiment does not limit this.

[0248] Optionally, in some other embodiments, in the above-described first-row pixel circuit structure, besides being connected to the input of the second transfer transistor, the output of the first transfer transistor can also be connected to an alternative connection scheme. For example, the output of the first transfer transistor can also be connected to both the input of the second transfer transistor and the input of the first reset transistor; for example, as... Figure 1G As shown, in pixel circuit 40, the output terminal of TX1 (i.e., an example of the first transfer transistor) is connected to the input terminal of TX2 (i.e., an example of the second transfer transistor) and the input terminal of RST (i.e., an example of the first reset transistor), respectively.

[0249] In some embodiments, step a) above can also be implemented by the following steps:

[0250] Step a1): When the first transfer transistor, the second transfer transistor, and the first selection transistor are all closed, the GS image sensor resets the first photosensitive element and the first floating diffusion node through the first reset transistor.

[0251] When the first transfer transistor, the second transfer transistor, and the first selection transistor are all closed (i.e., all conducting), the GS image sensor can reset the first photosensitive element and the first floating diffusion node by closing the first reset transistor. Optionally, the GS image sensor can also reset the first photosensitive element, the first charge storage region, and the first floating diffusion node by closing the first reset transistor.

[0252] It should be noted that the first charge storage region can be Figure 1A (or Figure 1C or Figure 1E or Figure 1G The charge storage region Cap in ) or, can also be Figure 1J The transfer transistor TX5 in the middle also has a charge storage function.

[0253] For example, such as Figure 8 As shown, the first row pixel circuit includes a first pixel circuit and a second pixel circuit, which correspond to the first pixel and the second pixel in the pixel array of the GS image sensor, respectively. The first pixel circuit includes a photodiode PD1, a first transfer transistor TX11, a second transfer transistor TX21, a charge storage region Cap1, a floating diffusion node FD1, a source follower SF1, a reset transistor RST1, and a selection transistor SEL1. The second pixel circuit includes a photodiode PD2, a first transfer transistor TX12, a second transfer transistor TX22, a floating diffusion node FD2, a charge storage region Cap2, a source follower SF2, a reset transistor RST2, and a selection transistor SEL2. When the GS image sensor controls the first row pixel circuit to reset through the control circuit, the reset operation of the first pixel circuit in the first row pixel circuit is as follows: the control circuit controls the first transfer transistor TX11, the second transfer transistor TX21, and the reset transistor RST1 to all close, so that the photodiode PD1, the charge storage region Cap1, and the floating diffusion node FD1 are reset. Meanwhile, the reset operation of the second pixel circuit is as follows: the control circuit controls the first transfer transistor TX12, the second transfer transistor TX22 and the reset transistor RST2 to close, so that the photodiode PD2, the charge storage area Cap2 and the floating diffusion node FD2 are reset.

[0254] Alternatively, the first row pixel circuit can also have, for example, Figure 9The circuit structure shown includes photodiode PD1, photodiode PD2, first transfer transistor TX11, second transfer transistor TX12, charge storage region Cap, floating diffusion node FD, source follower SF, reset transistor RST, and gate transistor SEL. When the GS image sensor controls the first row pixel circuit to reset via the control circuit, the reset operation of the first row pixel circuit is as follows: the control circuit controls the first transfer transistor TX11, first transfer transistor TX12, second transfer transistor TX2, and reset transistor RST to all close, thereby resetting photodiode PD1, photodiode PD2, charge storage region Cap, and floating diffusion node FD.

[0255] In some embodiments, step 302 can also be implemented through the following steps:

[0256] Step 1): The GS image sensor controls the first photosensitive element to re-expose the first row of pixel circuits, generating the first row of photogenerated charges.

[0257] The GS image sensor controls the first photosensitive element to perform an exposure operation, causing the first row of pixel circuits to be exposed again. During the exposure process, the first photosensitive element converts the photons collected by the first row of pixel circuits into the first row of photogenerated charges. After the exposure is completed, the first photosensitive element outputs the first row of photogenerated charges.

[0258] Step 2): With the first transfer transistor, the second transfer transistor, and the first selection transistor all closed, the GS image sensor transfers the first row of photogenerated charges to the first floating diffusion node.

[0259] After the first row of pixel circuits is exposed, the GS image sensor can control the first transfer transistor, the second transfer transistor and the first selection transistor to close, and transfer the first row of photogenerated charge to the first floating diffusion node.

[0260] Step 3): The GS image sensor converts the first row of photogenerated charges into electrical signals through the first floating diffusion node to generate a third electrical signal.

[0261] The GS image sensor receives the first row of photogenerated charges output from the first photosensitive element through the first floating diffusion node, and performs electrical signal conversion on the first row of photogenerated charges to generate a third electrical signal.

[0262] For example, such as Figure 8As shown, the process by which the GS image sensor controls the first row of pixel circuits to generate the third electrical signal is as follows: The process of generating electrical signal 1 in the first row of pixel circuits is as follows: The control circuit controls TX11 to open, controls PD1 to collect photons, and converts the photons into the first photogenerated charge (i.e., one of the photogenerated charges in the first row); closes TX11, and controls the first photogenerated charge to transfer to Cap1; closes TX21, and controls the first photogenerated charge in Cap1 to transfer to FD1; then FD1 converts the first photogenerated charge into electrical signal 1. At the same time, the process by which the second pixel circuit generates electrical signal 2 is as follows: The control circuit controls TX12 to open, controls PD2 to collect photons, and converts the photons into the second photogenerated charge (i.e., one of the photogenerated charges in the first row other than the first photogenerated charge); closes TX12, and controls the second photogenerated charge to transfer to Cap2; closes TX22, and controls the second photogenerated charge in Cap2 to transfer to FD2; FD2 converts the second photogenerated charge into electrical signal 2. The first row of pixel circuits processes electrical signal 1 and electrical signal 2 (such as signal superposition) to obtain the third electrical signal.

[0263] In one possible implementation, before the GS image sensor controls the trailing pixel circuit to re-expose and generate the fourth electrical signal (i.e., before step 304), the method 300 may further include:

[0264] Step b): The GS image sensor resets the trailing pixel circuit.

[0265] It should be noted that the GS image sensor resets the trailing pixel circuit in the same way it resets the first row pixel circuit. The explanation of the GS image sensor resetting the trailing pixel circuit is simply to replace the first row pixel circuit in step a) with the trailing pixel circuit, which will not be explained again here.

[0266] In one possible implementation, the trailing pixel circuit includes a second photosensitive element, a third transfer transistor, a fourth transfer transistor, a second floating diffusion node, a second reset transistor, and a second selection transistor. The output terminal of the second photosensitive element is connected to the input terminal of the third transfer transistor, the output terminal of the third transfer transistor is connected to the input terminal of the fourth transfer transistor, the output terminal of the fourth transfer transistor is connected to both the second floating diffusion node and the input terminal of the second reset transistor, and the output terminal of the second reset transistor is connected to the input terminal of the second selection transistor.

[0267] The second photosensitive element is understood in a similar way to the first photosensitive element. For a description of the second photosensitive element, please refer to the description of the first photosensitive element above. It will not be repeated here.

[0268] The understanding of the third transfer transistor is similar to that of the first transfer transistor. The description of the third transfer transistor can be referred to the description of the first transfer transistor above, and will not be repeated here. The output terminal of the second photosensitive element and the input terminal of the third transfer transistor can be directly connected or indirectly connected (for example, connected through some device). This application embodiment does not limit this.

[0269] Furthermore, the output terminal of the third transfer transistor and the input terminal of the fourth transfer transistor can be directly connected or indirectly connected (for example, connected through some device in between), and this application embodiment does not limit this.

[0270] The understanding of the fourth transfer transistor is similar to that of the second transfer transistor. The description of the fourth transfer transistor can be referred to the description of the second transfer transistor above, and will not be repeated here. The output terminal of the fourth transfer transistor and the input terminal of the second floating diffusion node can be directly connected or indirectly connected (for example, connected through some device). This application embodiment does not limit this.

[0271] The understanding of the second floating diffusion node is similar to that of the first floating diffusion node. For a description of the second floating diffusion node, please refer to the description of the first floating diffusion node above. It will not be repeated here.

[0272] The second reset transistor is understood similarly to the first reset transistor. The description of the second reset transistor can be found in the description of the first reset transistor above, and will not be repeated here. The output terminal of the fourth transfer transistor and the input terminal of the second reset transistor can be directly connected or indirectly connected (for example, connected through some device). This application embodiment does not limit this.

[0273] The second selection transistor is understood similarly to the first selection transistor. The description of the second selection transistor can be found in the description of the first selection transistor above, and will not be repeated here. The output terminal of the second reset transistor and the input terminal of the second selection transistor can be directly connected or indirectly connected (for example, connected through a device (such as a source follower SF)). This application does not limit this.

[0274] Optionally, in some other embodiments, in the above-described trailing pixel circuit structure, besides being connected to the input of the fourth transfer transistor, the output of the third transfer transistor can also be connected to an alternative connection scheme. For example, the output of the third transfer transistor can also be connected to the input of the fourth transfer transistor and the input of the second reset transistor, respectively. Figure 1GAs shown, in pixel circuit 40, the output terminal of TX1 (i.e., an example of the third transfer transistor) is connected to the input terminal of TX2 (i.e., an example of the fourth transfer transistor) and the input terminal of RST (i.e., an example of the second reset transistor), respectively.

[0275] In some embodiments, step b) above can also be implemented by the following steps:

[0276] Step b1): With the third transfer transistor, the fourth transfer transistor, and the second selection transistor all closed, the second photosensitive element and the second floating diffusion node are reset by the second reset transistor.

[0277] When the third transfer transistor, the fourth transfer transistor, and the second selection transistor are all closed (i.e., conducting), the GS image sensor resets the second photosensitive element and the second floating diffusion node by closing the second reset transistor. Optionally, the GS image sensor can also reset the second photosensitive element, the second charge storage region, and the second floating diffusion node by closing the second reset transistor; the understanding of the second charge storage region can refer to the first charge storage region Cap mentioned above, and will not be repeated here.

[0278] For example, such as Figure 10 As shown, the trailing pixel circuit may include a third pixel circuit and a fourth pixel circuit, which correspond to the third and fourth pixel points in the pixel array of the GS image sensor, respectively. The third pixel circuit may include a photodiode PD3, a first transfer transistor TX13, a second transfer transistor TX23, a charge storage region Cap3, a floating diffusion node FD3, a source follower SF3, a reset transistor RST3, and a gating transistor SEL3. The fourth pixel circuit may include a photodiode PD4, a first transfer transistor TX14, a second transfer transistor TX24, a floating diffusion node FD3, a source follower SF3, a reset transistor RST3, and a gating transistor SEL3. The GS image sensor consists of a dynamic diffusion node FD4, a charge storage region Cap4, a source follower SF4, a reset transistor RST4, and a gate transistor SEL4. When the GS image sensor controls the tail pixel circuit to reset via the control circuit, the reset operation of the third pixel circuit in the tail pixel circuit is as follows: the control circuit controls TX13, TX23, and RST3 to close, thereby resetting PD3, Cap3, and FD3. At the same time, the reset operation of the fourth pixel circuit is as follows: the control circuit controls TX14, TX24, and RST4 to close, thereby resetting PD4, Cap4, and FD4.

[0279] It should be noted that the trailing pixel circuit can also have a similar design to the first-row pixel circuit, such as... Figure 9 The circuit structures shown are similar in principle, so no further examples will be given here.

[0280] In some embodiments, step 304 can also be implemented through the following steps:

[0281] Step 11): The GS image sensor controls the second photosensitive element to re-expose the tail pixel circuit, generating the second row of photogenerated charges.

[0282] The GS image sensor controls the second photosensitive element to perform an exposure operation, causing the trailing pixel circuit to be exposed again. During the exposure process, the second photosensitive element converts the photons collected by the trailing pixel circuit into a second row of photocharge. After the exposure is completed, the second photosensitive element outputs the second row of photocharge.

[0283] Step 22): With the third transfer transistor, the fourth transfer transistor, and the second selection transistor all closed, the GS image sensor transfers the second row of photogenerated charges to the second floating diffusion node.

[0284] After the tail pixel circuit exposure is complete, the GS image sensor controls the third transfer transistor, the fourth transfer transistor, and the second selection transistor to close, and transfers the second row of photogenerated charge to the second floating diffusion node.

[0285] Step 33): The GS image sensor converts the photogenerated charge in the second row into an electrical signal through the second floating diffusion node, generating a fourth electrical signal.

[0286] The GS image sensor receives the second row of photogenerated charges output from the second photosensitive element through the second floating diffusion node, and performs electrical signal conversion on the second row of photogenerated charges to generate a fourth electrical signal.

[0287] For example, such as Figure 10 As shown, the process by which the GS image sensor controls the first row of pixel circuits to generate the fourth electrical signal is as follows: The process by which the first pixel circuit in the last row of pixel circuits generates electrical signal 3 is as follows: The control circuit controls TX13 to open, controls PD3 to collect photons, and converts the photons into the third photogenerated charge (i.e., one of the photogenerated charges in the second row); closes TX13, and controls the third photogenerated charge to transfer to Cap3; closes TX23, and controls the third photogenerated charge in Cap3 to transfer to FD3; then FD3 converts the third photogenerated charge into electrical signal 3; At the same time, the process by which the second pixel circuit generates electrical signal 4 is as follows: The control circuit controls TX13 to open, controls PD4 to collect photons, and converts the photons into the fourth photogenerated charge (i.e., one of the photogenerated charges in the second row other than the third photogenerated charge); closes TX14, and controls the fourth photogenerated charge to transfer to Cap4; closes TX24, and controls the fourth photogenerated charge in Cap4 to transfer to FD4; FD4 converts the fourth photogenerated charge into electrical signal 4; The first row of pixel circuits obtains the fourth electrical signal by processing electrical signal 3 and electrical signal 4 (such as signal superposition).

[0288] To facilitate understanding, the following will be combined with... Figure 11A The circuit structure of the GS image sensor shown is as follows: Figure 11B The timing flow of the GS image sensor shown exemplifies the process by which the GS image sensor generates the first GS image and the first RS image through the method 300 described above.

[0289] like Figure 11A As shown, taking a GS image sensor including a control circuit, a first row pixel circuit, a second row pixel circuit, and a readout circuit as an example, the first row pixel circuit can be understood as the first row pixel circuit, and the second row pixel circuit can be understood as the last row pixel circuit; both the first row pixel circuit and the second row pixel circuit can include multiple... Figure 1A The pixel circuit 10 shown can be controlled by a control circuit that outputs two sets of control signals, namely control signal group 1 and control signal group 2, to control the operation of each device in the pixel circuit 10 in the first row pixel circuit and the second row pixel circuit, respectively. Control signal group 1 is used to control the first row pixel circuit to perform operations such as reset, exposure and electrical signal generation, and control signal group 2 is used to control the second row pixel circuit to perform operations such as reset, exposure and electrical signal generation. The readout circuit may include, but is not limited to, a comparator, which is used to receive the voltage signal (i.e., an example of an electrical signal) output by each pixel circuit and output a digital signal (i.e., a discrete voltage value) based on the voltage signal. For example, after receiving the voltage signal output by pixel circuit 1, the comparator can compare the voltage signal with the ramp signal output by the control circuit and output the compared digital signal.

[0290] It should be noted that the working principle of control signal group 1 controlling the first row of pixel circuits is similar to that of control signal group 2 controlling the second row of pixel circuits. The only difference is that when they control different rows of pixel circuits 10, the high and low level times of the same type of control signal are different. Since each row of pixel circuits can include multiple identical pixel circuits 10, for ease of explanation, only one pixel circuit 10 in each row will be used as a representative to illustrate the workflow of each group of control signals controlling each row of pixel circuits.

[0291] The control signal group 1 may include a first transmission signal 1, a second transmission signal 1, a reset signal 1, a row selection signal 1, and a ramp signal 1. The first transmission signal 1 is used to control the closing / opening of TX1 of each pixel circuit 10 in the first row pixel circuit. The second transmission signal 1 is used to control the closing / opening of TX2 of each pixel circuit 10 in the first row pixel circuit. The reset signal 1 is used to control the closing / opening of RST of each pixel circuit 10 in the first row pixel circuit. The row selection signal 1 is used to control the closing / opening of SEL of each pixel circuit 10 in the first row pixel circuit. The ramp signal 1 is used to compare with the voltage signals output by each pixel circuit 10 in the first row pixel circuit.

[0292] The control signal group 2 may include a first transmission signal 2, a second transmission signal 2, a reset signal 2, a row selection signal 2, and a ramp signal 2. The first transmission signal 2 is used to control the closing / opening of TX1 of each pixel circuit 10 in the second row pixel circuit. The second transmission signal 2 is used to control the closing / opening of TX2 of each pixel circuit 10 in the second row pixel circuit. The reset signal 2 is used to control the closing / opening of RST of each pixel circuit 10 in the second row pixel circuit. The row selection signal 2 is used to control the closing / opening of SEL of each pixel circuit 10 in the second row pixel circuit. The ramp signal 2 is used to compare with the voltage signals output by each pixel circuit 10 in the second row pixel circuit.

[0293] like Figure 11B As shown, the timing sequence for the GS image sensor to generate the first GS image and the first RS image is as follows:

[0294] Step (1): At time T1, the control circuit outputs a reset signal 1, a first transmission signal 1, and a second transmission signal 1 at a high level, respectively; wherein, the reset signal 1 controls RST to close (i.e., conduct), the first transmission signal 1 controls TX1 to close, and the second transmission signal 1 controls TX2 to close; PD and FD are reset; At time T2, the control circuit outputs a reset signal 1, a first transmission signal 1, and a second transmission signal 1 at a low level, respectively; TX1, TX2, and RST are all disconnected; the control circuit controls the first row of pixel circuits to start exposure, that is, the PD of each pixel circuit 10 in the first row of pixel circuits starts collecting photons.

[0295] Step (2): At time T3, the control circuit outputs the first transmission signal 1, which is set back to a high level; the first transmission signal 1 controls TX1 to close again, and the exposure of the first row of pixel circuits ends; during the period from time T2 to time T3, the PD converts photons into charges.

[0296] Step (3): During the period from time T3 to time T4, TX1 remains closed, and the control circuit transfers the charge converted by PD to Cap.

[0297] Step (4): At time T5, the control circuit outputs a reset signal 1 and a row selection signal 1 at a high level; the reset signal 1 controls RST to close, and FD is reset again; at time T6, the control circuit sets the reset signal 1 to a low level, that is, RST is opened; FD can output a reset voltage 1 to SF; SF can output a voltage follower signal 1 (i.e., reference voltage 1) according to the reset voltage 1; the voltage follower signal 1 is output to the readout circuit through SEL.

[0298] Step (5): At time T7, the control circuit outputs a second transmission signal 1 at a high level, causing TX2 to close; the control circuit begins to control the first row pixel circuit to generate (or read out) a first voltage signal (i.e., an example of a first electrical signal); specifically, the control circuit transfers the charge in Cap to FD; FD converts the received charge into a first voltage signal according to gain 11 (as mentioned above, gain D1), and outputs the first voltage signal sequentially through SF and SEL to the readout circuit; wherein, the first voltage signal is used to generate the first GS image. Specifically, the readout circuit can input the voltage follower signal 1 and the first voltage signal to an internal comparator, and the comparator outputs a first digital signal based on the voltage follower signal 1, the first voltage signal, and the ramp signal 1101 output by the control circuit; wherein, the first digital signal is used to generate the first GS image, and the control circuit can output the ramp signal 1101 before time T7. For example, the comparator first compares the voltage follower signal 1 with the ramp signal 1101 to obtain digital signal 1, then compares the first voltage signal with the ramp signal 1101 to obtain digital signal 2, and finally obtains the first digital signal based on the difference between digital signal 2 and digital signal 1; the gain 11 can be determined by capacitor C1.

[0299] Step (6): From time T8 to time T9, the control circuit outputs a reset signal 1, a first transmission signal 1, a second transmission signal 1, and a row selection signal 1, all at a high level. The reset signal 1 controls the RST to close again, the first transmission signal 1 controls the TX1 to close, and the second transmission signal 1 controls the TX2 to close. The PD and FD are reset. The row selection signal 1 controls the SEL to close. The control circuit will then control the first row pixel circuit to be exposed again.

[0300] Step (7): At time T9, the control circuit sets the reset signal 1, the first transmission signal 1, the second transmission signal 1, and the row selection signal 1 back to low level; RST, TX1, TX2, and SEL are all disconnected; the control circuit controls the first row pixel circuit to be exposed again.

[0301] Step (8): The exposure time of the first row pixel circuit is from time T9 to time T12. During the exposure of the first row pixel circuit, for example, at time T10, the control circuit outputs a reset signal 1 and a row selection signal 1 at a high level, so that RST and SEL are closed and FD is reset again. At time T11, the control circuit sets the reset signal 1 to a low level, so that RST is opened. FD can output a reset voltage 2 to SF. SF can output a voltage follower signal 2 (i.e., reference voltage 2) according to the reset voltage 2. The voltage follower signal 2 is output to the readout circuit through SEL.

[0302] Step (9): At time T12, the control circuit outputs the first transmission signal 1 and the second transmission signal 1 at a high level; the first transmission signal 1 controls TX1 to close again, and the second transmission signal 1 controls TX2 to close again, and the exposure of the first row of pixel circuit ends; during the period from time T9 to time T12, the PD converts photons into charges (or electrons).

[0303] Step (10): Simultaneously, at time T12, the control circuit begins to control the first row of pixel circuits to generate a third voltage signal (i.e., an example of a third electrical signal); specifically, the control circuit transfers the charge in the PD to the FD; the FD converts the received charge into a third voltage signal according to a gain of 11, and outputs the third voltage signal sequentially through SF and SEL to the readout circuit; wherein, the third voltage signal is used to generate the first RS image. Specifically, the readout circuit can input the voltage follower signal 2 and the third voltage signal to the internal comparator, and the comparator outputs a second digital signal based on the voltage follower signal 2, the third voltage signal, and the ramp signal 1102 output by the control circuit; wherein, the second digital signal is used to generate the first RS image, and the control circuit can output the ramp signal 1102 before time T12. For example, the comparator first compares the voltage follower signal 2 with the ramp signal 1102 to obtain digital signal 3, then compares the third voltage signal with the ramp signal 1102 to obtain digital signal 4, and finally obtains the third digital signal based on the difference between digital signal 4 and digital signal 3.

[0304] It should be noted that steps (1) to (10) above are the processing flow of the first row of pixel circuits; steps (11) to (20) below are the processing flow of the second row of pixel circuits.

[0305] Step (11): At time T1, the control circuit outputs a reset signal 2, a first transmission signal 2, and a second transmission signal 2 at a high level, respectively; wherein, the reset signal 2 controls the RST to close, the first transmission signal 2 controls the TX1 to close, and the second transmission signal 2 controls the TX2 to close; PD and FD are reset; at time T2, the control circuit outputs a reset signal 2, a first transmission signal 2, and a second transmission signal 2 at a low level, respectively; TX1, TX2, and RST are all disconnected; the control circuit controls the second row of pixel circuits to start exposure, that is, the PD of each pixel circuit 10 in the second row of pixel circuits starts to collect photons.

[0306] Step (12): At time T3, the control circuit outputs the first transmission signal 2, which is set back to a high level, so that TX1 is closed and the exposure of the second row of pixel circuit ends; during the period from time T2 to time T3, the PD converts the collected photons into charges.

[0307] Step (13): During the period from T3 to T4, TX1 remains closed, and the control circuit transfers the charge converted by PD to Cap.

[0308] Step (14): At time T13, the control circuit outputs a reset signal 2 and a row selection signal 2 that are set to high level again; the reset signal 2 controls RST to close, and FD is reset again; at time T14, the control circuit sets the reset signal 2 to low level, so that RST is opened; FD can output a reset voltage 3 to SF; SF can output a voltage follower signal 3 (i.e., reference voltage 3) according to the reset voltage 3; the voltage follower signal 3 is output to the readout circuit through SEL; where T13 to T14 is a certain time period between T7 and T8.

[0309] Step (15): At time T15, the control circuit outputs the second transmission signal 2, which is set to a high level again, causing TX2 to close. The control circuit then starts controlling the second row pixel circuit to generate a second voltage signal (i.e., an example of a second electrical signal). Specifically, the control circuit transfers the charge in Cap to FD. FD converts the received charge into a second voltage signal according to gain 11, and outputs the second voltage signal to the readout circuit through SF and SEL in sequence. Specifically, the readout circuit can input the voltage follower signal 3 and the second voltage signal to the internal comparator. The comparator outputs a second digital signal based on the voltage follower signal 3, the second voltage signal, and the ramp signal 1103 output by the control circuit. This second digital signal is used to generate the first GS image. The control circuit can output the ramp signal 1103 before time T15. For example, the comparator first compares the voltage follower signal 3 and the ramp signal 1103 to obtain digital signal 5, then compares the second voltage signal and the ramp signal 1103 to obtain digital signal 6, and finally obtains the second digital signal based on the difference between digital signal 5 and digital signal 6.

[0310] The readout circuit can generate a first GS image based on the first digital signal and the second digital signal output in step (5). Time T15 is between time T14 and time T8.

[0311] Step (16): Between times T16 and T17, the control circuit outputs a high-level reset signal 2, a first transmission signal 2, a second transmission signal 2, and a row selection signal 2; wherein, the reset signal 2 controls RST to close again, the first transmission signal 2 controls TX1 to close, and the second transmission signal 2 controls TX2 to close; PD and FD are reset; the row selection signal 2 controls SEL to close; the control circuit will control the second row pixel circuit to be exposed again. It should be noted that T16 can be a time before time T10, and time T17 can be equal to time T10 or a time near time T10.

[0312] Step (17): At time T17, the control circuit sets the reset signal 2, the first transmission signal 2, the second transmission signal 2, and the row selection signal 2 back to low level; RST, TX1, TX2, and SEL are all disconnected; the control circuit controls the second row pixel circuit to be exposed again.

[0313] Step (18): The exposure time of the second row pixel circuit is from T17 to T20. During the exposure of the second row pixel circuit, for example, at T18, the control circuit outputs a reset signal 2 and a row selection signal 2 at a high level, so that RST and SEL are closed, and FD is reset again. At T19, the control circuit sets the reset signal 2 at a low level, so that RST is opened. FD can output a reset voltage 4 to SF. SF can output a voltage follower signal 4 (i.e., reference voltage 4) according to the reset voltage 4. The voltage follower signal 4 is output to the readout circuit through SEL.

[0314] Step (19): At time T20, the control circuit outputs the first transmission signal 2 and the second transmission signal 2, which are reset to a high level, so that TX1 and TX2 close again and the exposure of the second row of pixel circuit ends; during the period from time T17 to time T20, the PD converts photons into charges.

[0315] Step (20): Simultaneously, at time T20, the control circuit begins to control the second row of pixel circuits to generate a fourth voltage signal (i.e., an example of a fourth electrical signal); specifically, the control circuit transfers the charge in the PD to the FD; the FD converts the received charge into a fourth voltage signal according to a gain of 11, and outputs the fourth voltage signal sequentially through SF and SEL to the readout circuit. Specifically, the readout circuit can input the voltage follower signal 4 and the fourth voltage signal to an internal comparator, and the comparator outputs a fourth digital signal based on the voltage follower signal 4, the fourth voltage signal, and the ramp signal 1104 output by the control circuit; wherein, the fourth digital signal is used to generate the first RS image, and the control circuit can output the ramp signal 1104 before time T20. For example, the comparator first compares the voltage follower signal 4 and the ramp signal 1104 to obtain digital signal 7, then compares the fourth voltage signal and the ramp signal 1104 to obtain digital signal 8, and finally obtains the fourth digital signal based on the difference between digital signal 7 and digital signal 8.

[0316] The readout circuit can generate a first RS image based on the third digital signal and the fourth digital signal output in step (10).

[0317] The above describes the process by which the GS image sensor generates the first GS image and the first RS image using the method described above 300. The following section combines... Figure 12A The circuit structure of the GS image sensor shown is as follows: Figure 12B The timing flow of the GS image sensor shown exemplifies the process by which the GS image sensor generates a first GS image, a first RS image, and a second RS image through the method 300 described above.

[0318] like Figure 12A As shown, taking a GS image sensor including a control circuit, a first row pixel circuit, a second row pixel circuit, and a readout circuit as an example, the first row pixel circuit can be understood as the first row pixel circuit, and the second row pixel circuit can be understood as the last row pixel circuit; both the first row pixel circuit and the second row pixel circuit can include multiple... Figure 1C The pixel circuit 20 shown; the control circuit can control the operation of each device in the pixel circuit 20 in the first row pixel circuit and the second row pixel circuit by outputting two sets of control signals, namely control signal group 01 and control signal group 02. Among them, control signal group 01 is used to control the first row pixel circuit to perform operations such as reset, exposure and electrical signal generation, and control signal group 02 is used to control the second row pixel circuit to perform operations such as reset, exposure and electrical signal generation. The readout circuit may include, but is not limited to, a comparator, which is used to receive the voltage signal (i.e., an example of an electrical signal) output by each pixel circuit, and output a digital signal (i.e., a discrete voltage value) based on the voltage signal.

[0319] It should be noted that the working principle of control signal group 01 controlling the first row of pixel circuits is similar to that of control signal group 02 controlling the second row of pixel circuits. The only difference is that when they control different rows of pixel circuits 20, the high and low level times of the same type of control signal are different. Since each row of pixel circuits can include multiple identical pixel circuits 20, for ease of explanation, only one pixel circuit 20 in each row is used as a representative to illustrate the workflow of each row of control signals controlling each row of pixel circuits.

[0320] The control signal group 01 may include a first transmission signal 1, a second transmission signal 1, a third transmission signal 1, a reset signal 1, a row selection signal 1, and a ramp signal 1. The first transmission signal 1 is used to control the closing / opening of TX1 of each pixel circuit 20 in the first row pixel circuit. The second transmission signal 1 is used to control the closing / opening of TX2 of each pixel circuit 20 in the first row pixel circuit. The third transmission signal 1 is used to control the conduction and disconnection of the gain adjustment circuit 101 of each pixel circuit 20 in the first row pixel circuit. The reset signal 1 is used to control the closing / opening of RST of each pixel circuit 20 in the first row pixel circuit. The row selection signal 1 is used to control the closing / opening of SEL of each pixel circuit 20 in the first row pixel circuit. The ramp signal 1 is used to compare with the voltage signals output by each pixel circuit 20 in the first row pixel circuit.

[0321] The control signal group 02 may include a first transmission signal 2, a second transmission signal 2, a third transmission signal 2, a reset signal 2, a row selection signal 2, and a ramp signal 2. The first transmission signal 2 is used to control the closing / opening of TX1 of each pixel circuit 20 in the second row pixel circuit; the second transmission signal 2 is used to control the closing / opening of TX2 of each pixel circuit 20 in the second row pixel circuit; the third transmission signal 2 is used to control the conduction and disconnection of the gain adjustment circuit 101 of each pixel circuit 20 in the second row pixel circuit; the reset signal 2 is used to control the closing / opening of RST of each pixel circuit 20 in the second row pixel circuit; the row selection signal 2 is used to control the closing / opening of SEL of each pixel circuit 20 in the second row pixel circuit; and the ramp signal 2 is used to compare with the voltage signals output by each pixel circuit 20 in the second row pixel circuit.

[0322] like Figure 12B As shown, the timing sequence of the GS image sensor generating the first GS image, the first RS image, and the second RS image is as follows:

[0323] Regarding the first row of pixel circuitry, it should be noted that the GS image sensor in T... 00 Time to T 01 The operations that are executed at any time, and Figure 11BThe operations performed by the GS image sensor from time T1 to T12 and from time T13 to T17 are similar and will not be described again here. 00 Time to T 01 Time (corresponding) Figure 11B During times T1 to T12 and T13 to T17, voltage follower signal 1, first voltage signal (corresponding to first digital signal), voltage follower signal 2, and third voltage signal (corresponding to third digital signal) have all been generated.

[0324] In T 02 At time T, the control circuit outputs the third transmission signal 1, which is set to a high level, causing TX3 to close; at time T... 02 At that moment, the control circuit outputs a second transmission signal 1 at a high level, causing TX2 to close and controlling the transfer of charge in Cap to FD.

[0325] After receiving the charge, the FD converts the charge into a fifth voltage signal (an example of a fifth electrical signal) according to gain 22 (i.e., an example of the first gain), and outputs the fifth voltage signal sequentially through SF and SEL to the readout circuit; wherein, the fifth voltage signal is used to generate the second RS image. Specifically, the readout circuit can input the voltage follower signal 2 and the fifth voltage signal to an internal comparator, and the comparator outputs a fifth digital signal based on the voltage follower signal 2, the fifth voltage signal, and the ramp signal 1201 output by the control circuit; wherein, the fifth digital signal is used to generate the second RS image, and the control circuit can... 02 Before the time step, output ramp signal 1201. For example, the comparator first compares the voltage follower signal 2 with the ramp signal 1201 to obtain digital signal 9, then compares the fifth voltage signal with the ramp signal 1201 to obtain digital signal 10, and finally obtains the fifth digital signal based on the difference between digital signal 9 and digital signal 10; where gain 22 can be determined by capacitor Cs and capacitor C1.

[0326] It should be noted that after the first pixel circuit generates voltage signals with two different gains (such as the third voltage signal and the fifth voltage signal), the control circuit can output a reset signal 1 at a high level, so that the Cap and FD devices in the first pixel circuit are reset again.

[0327] Similarly, regarding the second row of pixel circuitry, it should be noted that the GS image sensor in T... 00 Time to T 03 The operations that are executed at any time, and Figure 11B The operations performed by the GS image sensor in steps (11) to (20) are similar and will not be repeated here. In T 00 Time to T 03 Time (corresponding) Figure 11BFrom time T1 to time T4 and from time T13 to time T20, voltage follower signal 3, second voltage signal (corresponding to second digital signal), voltage follower signal 4 and fourth voltage signal (corresponding to fourth digital signal) have all been generated.

[0328] In T 04 At time T, the control circuit outputs the third transmission signal 2 at a high level, causing TX3 to close; at time T... 04 At that moment, the control circuit outputs a second transmission signal 2 at a high level, causing TX2 to close and controlling the transfer of charge in Cap to FD.

[0329] After receiving the charge, the FD converts it into a sixth voltage signal (an example of a sixth electrical signal) according to gain 22, and outputs the sixth voltage signal sequentially through SF and SEL to the readout circuit; the sixth voltage signal is used to generate the second RS image. Specifically, the readout circuit can input the voltage follower signal 4 and the sixth voltage signal to an internal comparator. The comparator outputs a sixth digital signal based on the voltage follower signal 4, the sixth voltage signal, and the ramp signal 1202 output by the control circuit; this sixth digital signal is used to generate the second RS image, and the control circuit can... 04 Before the specified time, output ramp signal 1202. For example, the comparator first compares the voltage follower signal 4 with the ramp signal 1202 to obtain digital signal 11, then compares the sixth voltage signal with the ramp signal 1202 to obtain digital signal 12, and finally obtains the sixth digital signal based on the difference between digital signal 11 and digital signal 12.

[0330] It should be noted that after the second pixel circuit generates voltage signals with two different gains (such as the fourth voltage signal and the sixth voltage signal), the control circuit can output a reset signal 2 at a high level, so that the Cap and FD devices in the second pixel circuit are reset again.

[0331] The readout circuit can generate a second RS image based on the fifth digital signal and the sixth digital signal.

[0332] Optionally, Figure 12A The GS image sensor shown can also output GS images with two gains (e.g., a first GS image and a second GS image) and RS images with two gains (e.g., a first RS image and a second RS image); as Figure 12C As shown, the generation timing process of the GS image sensor is as follows:

[0333] Regarding the first row of pixel circuitry, it should be noted that the GS image sensor in T... 21 Time to T 22 The operations that are executed at any time, and Figure 11BThe operations performed by the GS image sensor from time T1 to T7 are similar and will not be described again here. 21 Time to T 22 Time (corresponding) Figure 11B During time intervals T1 to T7, voltage follower signal 1 and the first voltage signal (corresponding to the first digital signal) have been generated.

[0334] In T 23 At time T, the control circuit outputs the third transmission signal 1, which is set to a high level, causing TX3 to close; at time T... 23 At that moment, the control circuit outputs a second transmission signal 1 at a high level, causing TX2 to close and controlling the transfer of charge in Cap to FD.

[0335] After receiving the charge, the FD converts it into a seventh voltage signal (an example of a seventh electrical signal) according to gain 22 (i.e., an example of a second gain), and outputs the seventh voltage signal sequentially through SF and SEL to the readout circuit; wherein, the seventh voltage signal is used to generate a second GS image. Specifically, the readout circuit can input the voltage follower signal 1 and the seventh voltage signal to an internal comparator, and the comparator outputs a seventh digital signal based on the voltage follower signal 1, the seventh voltage signal, and the ramp signal 1203 output by the control circuit; wherein, the seventh digital signal is used to generate a second GS image, and the control circuit can... 23 Before the time step, output ramp signal 1203. For example, the comparator first compares the voltage follower signal 1 with the ramp signal 1203 to obtain digital signal 13, then compares the seventh voltage signal with the ramp signal 1203 to obtain digital signal 14, and finally obtains the seventh digital signal based on the difference between digital signal 13 and digital signal 14; where gain 22 can be determined by capacitor Cs and capacitor C1.

[0336] It should be noted that after the first pixel circuit generates voltage signals with two different gains (such as the first voltage signal and the seventh voltage signal), the control circuit can output a reset signal 1 at a high level, so that the Cap and FD devices in the first pixel circuit are reset again.

[0337] Similarly, regarding the second row of pixel circuitry, it should be noted that the GS image sensor in T... 21 Time, T 24 Time and T 25 The operations that are executed at any time, and Figure 11B The operations performed by the GS image sensor in steps (11) to (15) are similar and will not be repeated here. In T 25 Prior to this time, voltage follower signal 3 and second voltage signal (corresponding to second digital signal) have been generated.

[0338] The readout circuit can generate a first GS image based on the first digital signal and the second digital signal.

[0339] In T 25 At time T, the control circuit outputs the third transmission signal 1, which is set to a high level, causing TX3 to close; at time T... 25 At that moment, the control circuit outputs a second transmission signal 2 at a high level, causing TX2 to close and controlling the transfer of charge in Cap to FD.

[0340] After receiving the charge, the FD converts it into an eighth voltage signal (an example of an eighth electrical signal) according to gain 22, and outputs the eighth voltage signal sequentially through SF and SEL to the readout circuit; the eighth voltage signal is used to generate the second GS image. Specifically, the readout circuit can input the voltage follower signal 3 and the eighth voltage signal to an internal comparator. The comparator outputs an eighth digital signal based on the voltage follower signal 3, the eighth voltage signal, and the ramp signal 1204 output by the control circuit; this eighth digital signal is used to generate the second GS image, and the control circuit can... 25 Before the specified time, the ramp signal 1204 is output. For example, the comparator first compares the voltage follower signal 3 with the ramp signal 1204 to obtain the digital signal 15, then compares the eighth voltage signal with the ramp signal 1204 to obtain the digital signal 16, and finally obtains the eighth digital signal based on the difference between the digital signal 15 and the digital signal 16.

[0341] It should be noted that after the second pixel circuit generates voltage signals with two different gains (such as the second voltage signal and the eighth voltage signal), the control circuit can output a reset signal 2 at a high level, so that the Cap and FD devices in the second pixel circuit are reset again.

[0342] The readout circuit can generate a second GS image based on the seventh digital signal and the eighth digital signal.

[0343] It should be noted that for the processing methods of the first RS image and the second RS image with different gains output by the GS image sensor, please refer to the above text. Figure 12B The relevant descriptions in the illustrated embodiments will not be repeated here.

[0344] It should also be noted that the GS image sensor can also successively output two frames of GS images with different gains (such as the first GS image and the second GS image) and one frame of RS image (such as the first RS image) through the pixel circuits 20 included in each row of pixel circuits; the processing method for the GS image sensor to generate two frames of GS images with different gains can be referred to the relevant description in the embodiment shown in 12C, and will not be repeated here; the processing method for the GS image sensor to generate one frame of RS image (such as the first RS image) can be referred to the relevant description in the embodiment shown in 11B, and will not be repeated here.

[0345] like Figure 13A As shown, taking a GS image sensor including a control circuit, a first row pixel circuit, a second row pixel circuit, and a readout circuit as an example, the first row pixel circuit can be understood as the first row pixel circuit, and the second row pixel circuit can be understood as the last row pixel circuit; both the first row pixel circuit and the second row pixel circuit can include multiple... Figure 1E The pixel circuit 30 shown; the control circuit can control the operation of each device in the pixel circuit 30 in the first row pixel circuit and the second row pixel circuit by outputting two sets of control signals, namely control signal group 001 and control signal group 002. Among them, control signal group 001 is used to control the first row pixel circuit to perform operations such as reset, exposure and electrical signal generation, and control signal group 002 is used to control the second row pixel circuit to perform operations such as reset, exposure and electrical signal generation. The readout circuit may include, but is not limited to, a comparator, which is used to receive the voltage signal (i.e., an example of an electrical signal) output by each pixel circuit, and output a digital signal (i.e., a discrete voltage value) based on the voltage signal.

[0346] It should be noted that the working principle of control signal group 001 controlling the first row of pixel circuits is similar to that of control signal group 002 controlling the second row of pixel circuits. The only difference is that when they control different rows of pixel circuits 30, the high and low level times of the same type of control signal are different. Since each row of pixel circuits can include multiple identical pixel circuits 30, for ease of explanation, only one pixel circuit 30 in each row will be used as a representative to illustrate the workflow of each row of control signals controlling each row of pixel circuits.

[0347] The control signal group 001 may include a first transmission signal 1, a second transmission signal 1, a fourth transmission signal 1, a reset signal 1, a row selection signal 1, and a ramp signal 1. The first transmission signal 1 is used to control the closing / opening of TX1 of each pixel circuit 30 in the first row pixel circuit. The second transmission signal 1 is used to control the closing / opening of TX2 of each pixel circuit 30 in the first row pixel circuit. The fourth transmission signal 1 is used to control the conduction and disconnection of the charge collection circuit 102 of each pixel circuit 30 in the first row pixel circuit. The reset signal 1 is used to control the closing / opening of RST of each pixel circuit 30 in the first row pixel circuit. The row selection signal 1 is used to control the closing / opening of SEL of each pixel circuit 30 in the first row pixel circuit. The ramp signal 1 is used to compare with the voltage signals output by each pixel circuit 30 in the first row pixel circuit.

[0348] The control signal group 002 may include a first transmission signal 2, a second transmission signal 2, a fourth transmission signal 2, a reset signal 2, a row selection signal 2, and a ramp signal 2. The first transmission signal 2 is used to control the closing / opening of TX1 of each pixel circuit 30 in the second row pixel circuit; the second transmission signal 2 is used to control the closing / opening of TX2 of each pixel circuit 30 in the second row pixel circuit; the fourth transmission signal 2 is used to control the conduction and disconnection of the charge collection circuit 102 of each pixel circuit 30 in the second row pixel circuit; the reset signal 2 is used to control the closing / opening of RST of each pixel circuit 30 in the second row pixel circuit; the row selection signal 2 is used to control the closing / opening of SEL of each pixel circuit 30 in the second row pixel circuit; and the ramp signal 2 is used to compare with the voltage signals output by each pixel circuit 30 in the second row pixel circuit.

[0349] like Figure 13B As shown, the timing sequence of the GS image sensor generating the first GS image, the first RS image, and the second RS image is as follows:

[0350] It should be noted that the GS image sensor in T 00 Time to T 01 The process for generating the first GS image at each step can be referenced. Figure 11B Regarding the generation of the first GS image; the only difference is that the GS image sensor is in T 00 When resetting PD and FD, it is also necessary to output the fourth transmission signal 1 and the fourth transmission signal 2 at a high level.

[0351] In T 01 At time T, the control circuit outputs a high-level reset signal 1, a first transmission signal 1, a second transmission signal 1, and a fourth transmission signal 1, causing RST, TX1, TX2, and TX4 to all close; at this time, PD and FD are reset. 02At a certain moment, the control circuit outputs a reset signal 1, a first transmission signal 1, and a second transmission signal 1 at a low level, causing RST, TX1, and TX2 to disconnect; the control circuit controls the first row of pixel circuits to start exposure, that is, the PDs of each pixel circuit 30 in the first row of pixel circuits begin to collect photons.

[0352] In T 03 At time T, the control circuit outputs the first transmission signal 1 and the second transmission signal 1, which are then reset to a high level; TX1 and TX2 close again, and the exposure of the first row of pixel circuits ends; at T 02 Time to T 03 During this time period, the PD converts photons into electrical charges.

[0353] It should be noted that in T 03 Before the specified time, the control circuit outputs a row selection signal 1 at a high level, causing SEL to close.

[0354] In T 03 Time to T 04 During a given time period, the control circuit can control the first row pixel circuit to generate a third digital signal according to gain D1, wherein gain D1 (i.e., an example of the generation gain of the first RS image) can be determined by capacitor C1.

[0355] Similarly, in T 05 Before time T, the control circuit outputs a row selection signal 2 at a high level, causing SEL to close; at time T 05 Time to T 06 During this time period, the control circuit can control the second row of pixel circuits to generate a fourth digital signal according to gain D1.

[0356] The readout circuit can generate a first RS image based on the third digital signal and the fourth digital signal.

[0357] In T 07 Time to T 08 During this time period, the control circuit can control the first row of pixel circuits to generate a fifth digital signal according to gain D3 (i.e., another example of the first gain), where gain D3 can be determined by capacitor C1 and LOFIC.

[0358] Similarly, in T 09 Time to T 10 During this time period, the control circuit can control the second row of pixel circuits to generate the sixth digital signal according to the gain D3.

[0359] The readout circuit can generate a second RS image based on the fifth digital signal and the sixth digital signal.

[0360] Optionally, in some other embodiments, during the reading of the second RS image, the control circuit can control the third transfer transistor (i.e., TX3) in the pixel circuit 30 to output a third transmission signal 1 and a third transmission signal 2 at a high level; thus, in T 07 Time to T 08 During this time period, the control circuit can control the first row of pixel circuits to generate a fifth digital signal according to gain D4 (i.e., another example of the first gain), wherein gain D4 can be determined by capacitors C1, Cs and lofic.

[0361] Similarly, in T 09 Time to T 10 During this time period, the control circuit can control the second row of pixel circuits to generate the sixth digital signal according to the gain D4.

[0362] The readout circuit can generate a second RS image based on the fifth digital signal and the sixth digital signal.

[0363] It should be noted that the method by which the control circuit generates the third, fourth, fifth, and sixth digital signals can be found in the above text. Figure 11B The corresponding digital signal generation method will not be elaborated here.

[0364] In addition, it should be noted that, Figure 13B The markings 1300 and 1301 indicate that the duration of this section is adjustable.

[0365] To make it easier to understand, let's combine the following... Figure 14A The circuit structure of the GS image sensor shown is as follows: Figure 14B The timing flow of the GS image sensor shown exemplifies the process by which the GS image sensor generates the first GS image and the first RS image through the method 300 described above.

[0366] like Figure 14A As shown, taking a GS image sensor including a control circuit, a first row pixel circuit, a second row pixel circuit, and a readout circuit as an example, the first row pixel circuit can be understood as the first row pixel circuit, and the second row pixel circuit can be understood as the last row pixel circuit; both the first row pixel circuit and the second row pixel circuit can include multiple... Figure 1GThe pixel circuit 40 shown; the control circuit can control the operation of each device in the pixel circuit 40 in the first row pixel circuit and the second row pixel circuit by outputting two sets of control signals, namely control signal group 10 and control signal group 20; wherein, control signal group 10 is used to control the first row pixel circuit to perform operations such as reset, exposure and electrical signal generation, and control signal group 20 is used to control the second row pixel circuit to perform operations such as reset, exposure and electrical signal generation; the readout circuit may include, but is not limited to, a comparator, which is used to receive the voltage signal (i.e., an example of an electrical signal) output by each pixel circuit, and output a digital signal (i.e., a discrete voltage value) based on the voltage signal.

[0367] It should be noted that the working principle of control signal group 10 controlling the first row of pixel circuits is similar to that of control signal group 20 controlling the second row of pixel circuits. The only difference is that when they control different rows of pixel circuits 40, the high and low level times of the same type of control signal are different. Since each row of pixel circuits can include multiple identical pixel circuits 40, for ease of explanation, only one pixel circuit 40 in each row will be used as a representative to illustrate the workflow of each group of control signals controlling each row of pixel circuits.

[0368] The control signal group 10 may include a first transmission signal 1, a second transmission signal 1, a reset signal 1, a row selection signal 1, and a ramp signal 1. The first transmission signal 1 is used to control the closing / opening of TX1 of each pixel circuit 40 in the first row pixel circuit. The second transmission signal 1 is used to control the closing / opening of TX2 of each pixel circuit 40 in the first row pixel circuit. The reset signal 1 is used to control the closing / opening of RST of each pixel circuit 40 in the first row pixel circuit. The row selection signal 1 is used to control the closing / opening of SEL of each pixel circuit 40 in the first row pixel circuit. The ramp signal 1 is used to compare with the voltage signals output by each pixel circuit 40 in the first row pixel circuit.

[0369] The control signal group 20 may include a first transmission signal 2, a second transmission signal 2, a reset signal 2, a row selection signal 2, and a ramp signal 2. The first transmission signal 2 is used to control the closing / opening of TX1 of each pixel circuit 40 in the second row pixel circuit. The second transmission signal 2 is used to control the closing / opening of TX2 of each pixel circuit 40 in the second row pixel circuit. The reset signal 2 is used to control the closing / opening of RST of each pixel circuit 40 in the second row pixel circuit. The row selection signal 2 is used to control the closing / opening of SEL of each pixel circuit 40 in the second row pixel circuit. The ramp signal 2 is used to compare with the voltage signals output by each pixel circuit 40 in the second row pixel circuit.

[0370] like Figure 14BAs shown, the timing sequence for the GS image sensor to generate the first GS image and the first RS image is as follows:

[0371] It should be noted that the GS image sensor in T 00 Time to T 03 The process for generating the first GS image at each step can be referenced. Figure 11B Regarding the generation of the first GS image; the only difference is that the GS image sensor is in T 01 When the row select signal 1 is set to high level, the reset signal 1 is not required. Similarly, the GS image sensor does not need to output the reset signal 1 when T is set to high level. 02 When the row select signal 2 is set to high level, the reset signal 2 is not required. That is, when SEL is closed, RST does not need to be closed.

[0372] In T 03 At time T, the control circuit outputs a high-level reset signal 1, a first transmission signal 1, and a second transmission signal 1, causing RST, TX1, and TX2 to all close; at this time, PD and FD are reset. 04 At a certain moment, the control circuit outputs a reset signal 1, a first transmission signal 1, and a second transmission signal 1 at a low level, causing RST, TX1, and TX2 to disconnect; the control circuit controls the first row of pixel circuits to start exposure, that is, the PDs of each pixel circuit 40 in the first row of pixel circuits begin to collect photons.

[0373] In T 04 Time to T 05 During this time period, the PD converts photons into electrical charges.

[0374] In T 05 At time T, the control circuit outputs a first transmission signal 1 at a high level, which first closes TX1; the exposure of the first row of pixel circuits ends; at T 05 After time and at T 06 Before the specified time, the second transmission signal 1, which is set to a high level, causes TX2 to close. By controlling TX1 and TX2 to not close or open at the same time, the control circuit can ensure that the charge generated by the PD is fully transferred.

[0375] It should be noted that in T 05 Before the specified time, the control circuit outputs a row selection signal 1 at a high level, causing SEL to close.

[0376] In T 05 Time to T 07 During a given time period, the control circuit can control the first row pixel circuit to generate a third digital signal according to gain D1, wherein gain D1 (i.e., an example of the generation gain of the first RS image) can be determined by capacitor C1.

[0377] Similarly, in T08 Time to T 10 During this time period, the control circuit can control the second row of pixel circuits to generate a fourth digital signal according to gain D1.

[0378] The readout circuit can generate a first RS image based on the third digital signal and the fourth digital signal.

[0379] For example, such as Figure 15A As shown, taking a GS image sensor including a control circuit, a first row pixel circuit, a second row pixel circuit, and a readout circuit as an example, the first row pixel circuit can be understood as the first row pixel circuit, and the second row pixel circuit can be understood as the last row pixel circuit; both the first row pixel circuit and the second row pixel circuit can include multiple... Figure 1I The pixel circuit 50 shown; the control circuit can control the operation of each device in the pixel circuit 50 in the first row pixel circuit and the second row pixel circuit by outputting two sets of control signals, namely control signal group 100 and control signal group 200; wherein, control signal group 100 is used to control the first row pixel circuit to perform operations such as reset, exposure and electrical signal generation, and control signal group 200 is used to control the second row pixel circuit to perform operations such as reset, exposure and electrical signal generation; the readout circuit may include, but is not limited to, a comparator, which is used to receive the voltage signal (i.e., an example of an electrical signal) output by each pixel circuit, and output a digital signal (i.e., a discrete voltage value) based on the voltage signal.

[0380] It should be noted that the working principle of control signal group 100 controlling the first row of pixel circuits is similar to that of control signal group 200 controlling the second row of pixel circuits. The only difference is that when they control different rows of pixel circuits 50, the high and low level times of the same type of control signal are different. Since each row of pixel circuits can include multiple identical pixel circuits 50, for ease of explanation, only one pixel circuit 50 in each row will be used as a representative to illustrate the workflow of each group of control signals controlling each row of pixel circuits.

[0381] The control signal group 100 may include a first transmission signal 1, a second transmission signal 1, a fifth transmission signal 1, a reset signal 1, a row selection signal 1, and a ramp signal 1. The first transmission signal 1 is used to control the closing / opening of TX1 of each pixel circuit 50 in the first row pixel circuit. The second transmission signal 1 is used to control the closing / opening of TX2 of each pixel circuit 50 in the first row pixel circuit. The fifth transmission signal 1 is used to control the closing / opening of TX5 of each pixel circuit 50 in the first row pixel circuit. The reset signal 1 is used to control the closing / opening of RST of each pixel circuit 50 in the first row pixel circuit. The row selection signal 1 is used to control the closing / opening of SEL of each pixel circuit 50 in the first row pixel circuit. The ramp signal 1 is used to compare with the voltage signals output by each pixel circuit 50 in the first row pixel circuit.

[0382] The control signal group 200 may include a first transmission signal 2, a second transmission signal 2, a reset signal 2, a fifth transmission signal 2, a row selection signal 2, and a ramp signal 2. The first transmission signal 2 controls the closing / opening of TX1 of each pixel circuit 50 in the second row pixel circuit; the second transmission signal 2 controls the closing / opening of TX2 of each pixel circuit 50 in the second row pixel circuit; the fifth transmission signal 2 controls the closing / opening of TX5 of each pixel circuit 50 in the second row pixel circuit; the reset signal 2 controls the closing / opening of RST of each pixel circuit 50 in the second row pixel circuit; the row selection signal 2 controls the closing / opening of SEL of each pixel circuit 50 in the second row pixel circuit; and the ramp signal 2 is used to compare with the voltage signals output by each pixel circuit 50 in the second row pixel circuit.

[0383] like Figure 15B As shown, the timing sequence for the GS image sensor to generate the first GS image and the first RS image is as follows:

[0384] In T 00 At a certain moment, the control circuit outputs a high-level reset signal 1, a first transmission signal 1, a second transmission signal 1, and a fifth transmission signal 1, causing RST, TX1, TX2, and TX5 to all close; at this time, PD and FD are reset.

[0385] In T 01 At a certain moment, the control circuit outputs a reset signal 1, a first transmission signal 1, a second transmission signal 1, and a fifth transmission signal 1 at a low level, causing RST, TX1, TX2, and TX5 to all disconnect. The first row pixel circuit and the second row pixel circuit are exposed simultaneously, that is, the PD of each pixel circuit 50 in the first row pixel circuit and the second row pixel circuit begins to collect photons.

[0386] At time T02, the control circuit outputs the first transmission signal 1 and the fifth transmission signal 1, which are then reset to a high level; the first transmission signal 1 controls TX1 to close again, ending the exposure of the first row of pixel circuits; the fifth transmission signal 1 controls TX5 to close again; at T... 02 Time to T 03 During this period, TX1 and TX5 remain closed, and the control circuit transfers the charge converted by the PD of each pixel circuit 50 to TX5. At this time, TX5 acts as a capacitor to store charge. It should be noted that since the operating voltage of TX5 is adjustable, the capacity of TX5 as a capacitor to store charge is variable.

[0387] In T 03 After time and at T 04 Before the specified time, the control circuit outputs a row selection signal 1 at a high level, causing SEL to close.

[0388] In T 04 At a certain moment, the control circuit outputs a second transmission signal 1 at a high level, causing TX2 to close; the control circuit can control the first row pixel circuit to generate a first digital signal according to gain D1, wherein gain D1 can be determined by capacitor C1.

[0389] Similarly, in T 05 At any given time, the control circuit can control the second row of pixel circuits to generate a second digital signal according to gain D1.

[0390] The readout circuit can generate a first GS image based on the first digital signal and the second digital signal.

[0391] Before the control circuit generates the second digital signal, for example, at T 06 At a certain moment, the control circuit outputs a high-level reset signal 1, a first transmission signal 1, a fifth transmission signal 1, and a second transmission signal 1, causing RST, TX1, TX2, and TX5 to all close; at this time, PD and FD are reset.

[0392] In T 07 At a certain moment, the control circuit outputs a reset signal 1, a first transmission signal 1, a fifth transmission signal 1, and a second transmission signal 1 at a low level, causing RST, TX1, TX2, and TX5 to all disconnect; the control circuit controls the PD of each pixel circuit 50 in the first row of pixel circuits to start exposure, that is, the PD of each pixel circuit 50 in the first row of pixel circuits to start collecting photons.

[0393] In T 07 After time and at T 08 Before the specified time, the control circuit outputs a row selection signal 1 at a high level, causing SEL to close.

[0394] In T 07 Time to T08 During this time period, the PD converts photons into electrical charges.

[0395] In T 08 At time T, the control circuit first outputs a high-level first transmission signal 1 to close TX1; the exposure of the first row of pixel circuits ends; at T 08 After time and at T 09 Before time T, the fifth transmission signal 1, which is set to a high level, closes TX5; at time T 09 After time and at T 10 Before the specified time, the second transmission signal 1, which is set to a high level, causes TX2 to close; the control circuit controls TX1, TX2 and TX5 to close or open in sequence, so that the charge generated by PD is fully transferred.

[0396] From T 09 At the start of the moment, the control circuit can control the first row of pixel circuits to generate a third digital signal according to gain D1, where gain D1 can be determined by capacitor C1.

[0397] Similarly, in T 11 At time T, the control circuit first outputs a high-level first transmission signal 2 to close TX1; the exposure of the second row of pixel circuits ends; at T 11 After time and at T 12 Before time T, the fifth transmission signal 2, which is set to a high level, closes TX5; at time T 12 After time and at T 13 Before the time, the second transmission signal 2, which is set to a high level, closes TX2; the control circuit controls TX1, TX2 and TX5 to close or open in sequence, so that the charge generated by PD is fully transferred.

[0398] In T 12 Time to T 13 During this time period, the control circuit can control the second row of pixel circuits to generate a fourth digital signal according to gain D1.

[0399] The readout circuit can generate a first RS image based on the third digital signal and the fourth digital signal.

[0400] It should be noted that in practical applications, considering the performance differences of different devices, the control timing of the control circuit for each device (such as TX1, TX2, TX3, etc.) in the pixel circuit (such as pixel circuit 20, etc.) mentioned above may deviate. For example, in the process of generating GS images (such as the first GS image, etc.) and RS images (such as the first RS image, etc.), the actual operating timing of the devices may deviate reasonably from the timing shown in the example in the figure above. The embodiments of this application do not limit the operating timing of each device.

[0401] The foregoing section detailed examples of image generation methods provided in this application. It is understood that the GS image sensor, in order to achieve the aforementioned functions, includes corresponding hardware structures and / or software modules for executing each function. Those skilled in the art should readily recognize that, based on the units and algorithm steps of the examples described in conjunction with the embodiments disclosed herein, this application can be implemented in hardware or a combination of hardware and computer software. Whether a function is executed in hardware or by computer software driving hardware depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application. This application can divide the image generation method into functional units based on the above method examples; for example, each function can be divided into separate functional units, or two or more functions can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit. It should be noted that the unit division in this application is illustrative and only represents a logical functional division; other division methods may exist in actual implementation.

[0402] This application provides a computer program product that, when executed by a processor, implements the method of any of the method embodiments of this application. The computer program product can be stored in memory, and is, for example, a program that undergoes preprocessing, compilation, assembly, and linking processes to ultimately be converted into an executable object file that can be executed by a processor.

[0403] This application also provides a computer-readable storage medium storing a computer program thereon, which, when executed by the aforementioned electronic device, implements the method of any of the method embodiments of this application. The computer program may be a high-level language program or an executable object program.

[0404] The computer-readable storage medium is, for example, memory. Memory can be volatile or non-volatile, or it can include both volatile and non-volatile memory. Non-volatile memory can be read-only memory (ROM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), or flash memory. Volatile memory can be random access memory (RAM), which serves as an external cache. By way of example, but not limitation, many forms of RAM are available, such as static random access memory (SRAM), dynamic random access memory (DRAM), synchronous dynamic random access memory (SDRAM), double data rate synchronous dynamic random access memory (DDR SDRAM), enhanced synchronous dynamic random access memory (ESDRAM), synchronous linked dynamic random access memory (SLDRAM), and direct rambus RAM (DRRAM).

[0405] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working process and technical effects of the above-described apparatus and equipment can be referred to the corresponding processes and technical effects in the foregoing method embodiments, and will not be repeated here.

[0406] The systems, apparatuses, and methods disclosed in the embodiments provided in this application can be implemented in other ways. For example, some features of the method embodiments described above may be omitted or not performed. The apparatus embodiments described above are merely illustrative; the division of units is only a logical functional division, and in actual implementation, there may be other division methods. Multiple units or components may be combined or integrated into another system. Furthermore, the coupling between units or components can be direct or indirect, including electrical, mechanical, or other forms of connection.

[0407] The above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit it. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application, and should all be included within the protection scope of this application.

[0408] Finally, the above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any changes or substitutions within the technical scope disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A method for generating an image, characterized in that, Applied to a global shutter (GS) image sensor, the GS image sensor including a first row pixel circuit and a last row pixel circuit, the method includes: The first row pixel circuit and the last row pixel circuit are controlled to be exposed simultaneously to generate a first electrical signal and a second electrical signal, wherein the first electrical signal is the electrical signal generated by the first row pixel circuit and the second electrical signal is the electrical signal generated by the last row pixel circuit. After the first electrical signal is generated and before the second electrical signal is generated, the first row pixel circuit is controlled to be exposed again to generate a third electrical signal; A first GS image is generated based on the first electrical signal and the second electrical signal; The trailing pixel circuit is re-exposed to generate a fourth electrical signal; A first rolling shutter RS ​​image is generated based on the third and fourth electrical signals.

2. The method according to claim 1, characterized in that, The method further includes: After the third electrical signal is generated, and before the fourth electrical signal is generated, the first row pixel circuit is controlled to be exposed again to generate the fifth electrical signal; The trailing pixel circuit is re-exposed to generate a sixth electrical signal; A second RS image is generated based on the fifth and sixth electrical signals.

3. The method according to claim 2, characterized in that, The exposure duration of the second RS image is greater than that of the first RS image.

4. The method according to claim 2, characterized in that, The first gain is different from the generation gain of the first RS image; the first gain is the gain of the second RS image.

5. The method according to claim 4, characterized in that, Before controlling the first row of pixel circuits to be exposed again to generate the third electrical signal, the method further includes: After the first electrical signal is generated and before the second electrical signal is generated, the first row pixel circuit is controlled to generate a seventh electrical signal according to a second gain, which is different from the generation gain of the first GS image; After generating the second electrical signal, the trailing pixel circuit is controlled to generate an eighth electrical signal according to the second gain. The seventh and eighth electrical signals are used to generate a second GS image.

6. The method according to any one of claims 1 to 5, characterized in that, The exposure time of the first GS image is less than the exposure time of the first RS image.

7. The method according to any one of claims 1 to 6, characterized in that, Before the method controls the first row of pixel circuits to be exposed again to generate the third electrical signal, it further includes: The first row pixel circuit is reset.

8. The method according to claim 7, characterized in that, The first row pixel circuit includes a first photosensitive element, a first transfer transistor, a second transfer transistor, a first floating diffusion node, a first reset transistor, and a first selection transistor. The output terminal of the first photosensitive element is connected to the input terminal of the first transfer transistor. The output terminal of the first transfer transistor is connected to the input terminal of the second transfer transistor. The output terminal of the second transfer transistor is connected to both the first floating diffusion node and the input terminal of the first reset transistor. The output terminal of the first reset transistor is connected to the input terminal of the first selection transistor. Resetting the first row pixel circuit includes: When the first transfer transistor, the second transfer transistor, and the first selection transistor are all closed, the first photosensitive element and the first floating diffusion node are reset by the first reset transistor.

9. The method according to claim 8, characterized in that, The control of the first row of pixel circuits to be exposed again to generate a third electrical signal includes: The first photosensitive element is controlled to re-expose the first row of pixel circuits to generate the first row of photogenerated charges. When the first transfer transistor, the second transfer transistor, and the first selection transistor are all closed, the first row of photogenerated charge is transferred to the first floating diffusion node; The first floating diffusion node converts the photogenerated charge in the first row into an electrical signal to generate the third electrical signal.

10. The method according to any one of claims 1 to 9, characterized in that, Before the method controls the trailing pixel circuit to be exposed again to generate the fourth electrical signal, it further includes: The trailing pixel circuit is reset.

11. The method according to claim 10, characterized in that, The trailing pixel circuit includes a second photosensitive element, a third transfer transistor, a fourth transfer transistor, a second floating diffusion node, a second reset transistor, and a second selection transistor. The output terminal of the second photosensitive element is connected to the input terminal of the third transfer transistor, the output terminal of the third transfer transistor is connected to the input terminal of the fourth transfer transistor, the output terminal of the fourth transfer transistor is connected to both the second floating diffusion node and the input terminal of the second reset transistor, and the output terminal of the second reset transistor is connected to the input terminal of the second selection transistor. Resetting the trailing pixel circuit includes: When the third transfer transistor, the fourth transfer transistor, and the second selection transistor are all closed, the second photosensitive element and the second floating diffusion node are reset by the second reset transistor.

12. The method according to claim 11, characterized in that, The control of the trailing pixel circuit to re-expose and generate a fourth electrical signal includes: The second photosensitive element is controlled to re-expose the trailing pixel circuit, generating a second row of photogenerated charges; When the third transfer transistor, the fourth transfer transistor, and the second selection transistor are all closed, the second row of photogenerated charge is transferred to the second floating diffusion node; The second row of photogenerated charges is converted into electrical signals through the second floating diffusion node to generate the fourth electrical signal.

13. A GS image sensor, characterized in that, include: The system includes a first-row pixel circuit, a last-row pixel circuit, and a control circuit. The first-row pixel circuit and the last-row pixel circuit each include multiple pixel circuits. The control circuit is used to control the GS image sensor to perform the method according to any one of claims 1 to 12.

14. An electronic device, characterized in that, The electronic device includes the GS image sensor, which is used to perform the method of any one of claims 1 to 12.

15. An imaging system, characterized in that, The imaging system includes a processing circuit and the GS image sensor, wherein the processing circuit is used to control the GS image sensor to perform the method according to any one of claims 1 to 12.

Images