Lidar sensor system comprising an integrated modulator

Abstract

A light detection and ranging (LIDAR) system for a vehicle can include a light source configured to output a light beam, a photonic integrated circuit (PIC) including a semiconductor die, the semiconductor die including a substrate having two or more semiconductor devices formed on the substrate, the two or more semiconductor devices configured to receive the light beam from the light source and modify the light beam, and at least one photonic die coupled to the semiconductor die, the at least one photonic die including at least one emitter configured to receive the light beam from the semiconductor die, and one or more optical elements configured to receive the light beam from the emitter and emit the light beam toward an object in an environment of the vehicle.

Description

[0001] Priority Statement

[0002] This application claims priority and benefit to U.S. Patent Application No. 18 / 516,646, filed November 21, 2023, the entire contents of which are incorporated herein by reference. Background Technology

[0003] Light Detection and Ranging (LIDAR) systems use lasers to create a three-dimensional representation of the surrounding environment. A LIDAR system includes at least one transmitter paired with a receiver to form channels, although channel arrays can be used to expand the field of view of the LIDAR system. During operation, each channel emits a laser beam into the environment. The laser beams are reflected from objects within the environment, and the reflected beams are detected by the receiver. A single channel provides ranging information for a single point. Overall, multiple channels are combined to create a point cloud corresponding to a three-dimensional representation of the surrounding environment. Summary of the Invention

[0004] Various aspects and advantages of embodiments of this disclosure will be set forth in part in the description which follows, or may be learned from the description, or may be learned by practice of the embodiments.

[0005] Exemplary aspects of this disclosure relate to LIDAR systems. As further described herein, LIDAR systems can be used by various devices and platforms (e.g., robotic platforms, etc.) to enhance their ability to perceive their environment and perform functions in response to it (e.g., autonomous navigation within the environment).

[0006] This disclosure relates to the integration and co-packaging of silicon photonics dies and III-V semiconductor dies to improve the performance of LIDAR systems. Specifically, the III-V semiconductor die can include one or more semiconductor devices, such as modulators, preamplifiers, and / or amplifiers, respectively associated with channels on the semiconductor die. The III-V die can be coupled to a photonics die that feeds a light beam to a channel of the III-V die.

[0007] An exemplary implementation of this technology is a photonic integrated circuit having a group III-V die coupled to a silicon photonics die. The silicon photonics die includes a light source (e.g., a seed laser) that guides a light beam to a modulator. The modulator is configured to modulate the light beam to generate a modulated beam. The modulator can be configured to modulate the phase and / or frequency of the light source, such that the modulated beam can include a phase-modulated beam and / or a frequency-modulated beam. The modulated beam is provided to an amplifier formed by one or more channels of the group III-V die. The amplifier is configured to amplify the beam to generate an amplified beam. The amplified beam is provided to a transceiver chip configured to emit the amplified beam toward a target and receive the reflected beam from the target. The LIDAR system can determine the distance to the target and / or the velocity of the target based on the reflected beam.

[0008] Another exemplary implementation of this technology is a photonic integrated circuit having a semiconductor die (e.g., a III-V semiconductor die) coupled to a silicon photonic die. The silicon photonic die includes a light source (e.g., a seed laser) that feeds a light beam to a modulator formed as a channel of the semiconductor die. The modulator is configured to modulate the beam to generate a modulated beam, which is then fed to an amplifier formed by one or more channels of the same semiconductor die. The amplifier is capable of amplifying the modulated beam to generate an amplified beam, which is then capable of providing the amplified beam to a transceiver chip configured to emit the amplified beam toward an object and receive a reflected beam from the object. The LIDAR system can determine the distance to the object and / or the velocity of the object based on the reflected beam.

[0009] In another exemplary embodiment, the semiconductor die includes a preamplifier stage and an amplifier stage, each formed by one or more channels on the same semiconductor die. The preamplifier stage is capable of generating a preamplified beam that is amplified compared to the modulated beam, but this preamplified beam is not amplified to the intensity required for LiDAR applications. The amplifier stage is capable of amplifying the preamplified beam to the intensity required for LiDAR applications to generate an amplified beam provided to the transceiver chip. Although the preamplifier stage and the amplifier stage can operate independently, they can be formed on the same III-V group die.

[0010] In some implementations, one or more channels formed in a semiconductor die can be arranged in different directions. For example, one or more channels formed in a semiconductor die can be configured to guide light in a first direction, while one or more other channels formed in a semiconductor die can be configured to guide light in a second direction that is substantially parallel to but opposite to the first direction. For example, one or more channels associated with a first semiconductor device (e.g., a preamplifier) ​​can be configured to guide light in the first direction, while one or more channels associated with a second semiconductor device (e.g., a modulator and / or amplifier) ​​can be configured to guide light in the second direction.

[0011] To maintain consistency with this type of implementation, the semiconductor die can have a specific facet (e.g., a first facet, such as a facet coupled to at least one photonic die). The input of at least a first channel and the output of at least a second channel of one or more channels of the semiconductor die are both located on this specific facet. The semiconductor die can also have another specific facet (e.g., a second facet opposite the first facet, such as a facet coupled to a transceiver die / chip). Similar to the first facet, the input of at least a third channel and the output of at least a fourth channel of one or more channels of the semiconductor die are both located on the second facet.

[0012] III-V group semiconductor devices can be formed through parallel regeneration, where multiple different semiconductor devices can be grown independently and co-integrated on the same die without the need for butt joints to connect them. Specifically, these devices can be grown on the same substrate by first growing regeneration layers on multiple semiconductor stacks, and then etching away portions of the regeneration layers on semiconductor stacks that are not associated with the devices corresponding to the already grown layers. Subsequently, new layers for other semiconductor devices are grown in the previously etched areas. As a result, a substrate with multiple independently operating semiconductor devices formed on a single substrate is formed, without the need for butt joints to connect these devices. By eliminating butt joints, these devices avoid the optical losses and manufacturing inefficiencies associated with butt joints, thereby improving the quality of LIDAR systems utilizing these semiconductor devices.

[0013] The LIDAR system according to this disclosure offers a variety of technical effects and benefits. For example, the LIDAR system according to this disclosure can include multiple types of semiconductor devices (e.g., modulators, amplifiers, etc.) on a common substrate. Furthermore, these semiconductor devices can be connected via interfaces without requiring mating connectors or other combined manufacturing processes. In this way, compared to some existing LIDAR systems, these devices can reduce manufacturing costs, increase manufacturing efficiency, and / or improve performance.

[0014] Furthermore, in some cases, using III-V semiconductor devices to generate light may be advantageous because other semiconductors (e.g., silicon) may be unable to generate light or perform poorly when generating light. Exemplary aspects of this disclosure provide an efficient architecture for delivering high-power optical signals within an integrated chip that is easily incorporated into larger systems (e.g., LIDAR systems).

[0015] For example, in one aspect, this disclosure provides a Light Detection and Ranging (LIDAR) system for a vehicle. The LIDAR system includes: a light source configured to output a light beam; a photonic integrated circuit (PIC) including a semiconductor die, the semiconductor die including a substrate having two or more semiconductor devices formed on the substrate, the two or more semiconductor devices being configured to receive the light beam from the light source and modify the light beam; at least one photonic die coupled to the semiconductor die, the at least one photonic die including at least one emitter configured to receive the light beam from the semiconductor die; and one or more optical elements configured to receive the light beam from the emitter and direct the light beam toward an object in the vehicle environment.

[0016] In some embodiments, the semiconductor die includes one or more channels, at least one of the channels respectively including one or more semiconductor devices, and at least one photonic die includes one or more waveguides respectively coupled to the one or more channels.

[0017] In some embodiments, the semiconductor die has a specific facet. In some embodiments, the input of at least a first channel of one or more channels and the output of at least a second channel of one or more channels are located on the specific facet of the semiconductor die.

[0018] In some implementations, at least one photonic die includes a power distribution network configured to receive a light beam and distribute the light beam to one or more channels of one or more semiconductor devices.

[0019] In some implementations, at least one photonic die includes at least one silicon photonic die.

[0020] In some implementations, the semiconductor die is a III-V semiconductor die, and one or more semiconductor devices include one or more III-V semiconductor devices.

[0021] In some implementations, III-V semiconductor devices include indium phosphide devices, boron nitride devices, or gallium arsenide devices.

[0022] In some embodiments, at least one of two or more semiconductor devices includes a modulator configured to receive a light beam from a light source and modulate the light beam.

[0023] In some embodiments, at least one of the two or more semiconductor devices is an amplifier stage configured to receive and amplify a light beam from a light source.

[0024] In some implementations, two or more semiconductor devices include a preamplifier stage configured to receive a light beam from a light source and amplify the light beam to a specific amplitude, and to provide the light beam with the specific amplitude to an amplifier stage.

[0025] In some embodiments, each of two or more semiconductor devices is formed by a respective semiconductor stack on a substrate. In some embodiments, the respective semiconductor stacks of one or more semiconductor devices are isolated.

[0026] In some embodiments, at least one photonic die also includes a receiver configured to receive a reflected light beam from one or more optical elements, the reflected light beam being reflected from an object.

[0027] In some embodiments, at least one photonic die includes a transceiver die, wherein a transmitter and a receiver are disposed on the transceiver die.

[0028] For example, in one aspect, this disclosure provides an autonomous vehicle control system. The autonomous vehicle control system includes a photonic integrated circuit (PIC), the PIC comprising: a semiconductor die including a substrate having two or more semiconductor devices directly formed on the substrate, the two or more semiconductor devices being configured to receive and modify a light beam from a light source; and at least one photonic die coupled to the semiconductor die, the at least one photonic die including at least one transmitter configured to receive a light beam from the semiconductor die.

[0029] In some implementations, the semiconductor die is a III-V semiconductor die, and one or more semiconductor devices include one or more III-V semiconductor devices.

[0030] In some implementations, at least one of two or more semiconductor devices is a modulator configured to receive a light beam from a light source and modulate the light beam.

[0031] In some embodiments, at least one of the two or more semiconductor devices is an amplifier stage configured to receive and amplify a light beam from a light source.

[0032] In some implementations, two or more semiconductor devices include a preamplifier stage configured to receive a light beam from a light source, amplify the light beam to a specific amplitude, and provide the light beam with the specific amplitude to an amplifier stage.

[0033] In some embodiments, each of two or more semiconductor devices is formed by a respective semiconductor stack on a substrate. In some embodiments, the respective semiconductor stacks of one or more semiconductor devices are isolated.

[0034] For example, in one aspect, this disclosure provides an autonomous vehicle. The autonomous vehicle includes an autonomous vehicle control system, which includes: one or more processors; and a Light Detection and Ranging (LIDAR) system. The LIDAR system includes: a light source configured to output a light beam; a photonic integrated circuit (PIC) including a semiconductor die, the semiconductor die including a substrate having two or more semiconductor devices formed on the substrate, the two or more semiconductor devices being configured to receive the light beam from the light source and modify the light beam; and at least one photonic die coupled to the semiconductor die, the at least one photonic die including at least one emitter configured to receive the light beam from the semiconductor die; and one or more optical elements configured to receive the light beam from the emitter and direct the light beam toward an object in the vehicle environment.

[0035] Other exemplary aspects of this disclosure relate to other systems, methods, vehicles, apparatuses, tangible non-transitory computer-readable media, and devices for motion prediction and / or operation of LIDAR systems including LIDAR modules having exemplary aspects of this disclosure.

[0036] These and other features, aspects, and advantages of the various embodiments of this disclosure will become better understood with reference to the following description and the appended claims. The accompanying drawings, which are incorporated in and form a part of this specification, illustrate embodiments of the disclosure and, together with the specification, serve to explain the relevant principles. Attached Figure Description

[0037] Figure 1 A block diagram of an exemplary system according to some embodiments of the present disclosure is described.

[0038] Figure 2 A block diagram of an exemplary LIDAR system according to some embodiments of the present disclosure is described.

[0039] Figure 3 Exemplary photonic integrated circuits according to some embodiments of the present disclosure are described.

[0040] Figure 4 Exemplary photonic integrated circuits according to some embodiments of the present disclosure are described.

[0041] Figure 5 Exemplary photonic integrated circuits according to some embodiments of the present disclosure are described.

[0042] Figure 6 Cross-sectional views of exemplary semiconductor dies according to some embodiments of the present disclosure are described.

[0043] Figure 7 Cross-sectional views of exemplary intermediate semiconductor dies according to some embodiments of the present disclosure are described.

[0044] Figure 8 Cross-sectional views of exemplary intermediate semiconductor dies according to some embodiments of the present disclosure are described.

[0045] Figure 9 A flowchart is described for an exemplary method of producing photonic integrated circuits according to some embodiments of the present disclosure. Detailed Implementation

[0046] The techniques disclosed herein are described below for illustrative purposes only in the context of autonomous vehicles. As described herein, the techniques are not limited to autonomous vehicles and can be implemented in other robots and computing systems as well as various devices. For example, the systems and methods disclosed herein can be implemented in various ways, including but not limited to computer-implemented methods, autonomous vehicle systems, autonomous vehicle control systems, robot platform systems, general-purpose robot equipment control systems, computing devices, etc.

[0047] Reference Figures 1 to 9 Exemplary embodiments of this disclosure will be discussed in further detail. Figure 1A block diagram of an example autonomous vehicle control system 100 according to some embodiments of the present disclosure is depicted. The autonomous vehicle control system 100 can be implemented by the autonomous vehicle's computing system. The autonomous vehicle control system 100 can include one or more sub-control systems 101 that operate to acquire input from sensors 102 or other input devices of the autonomous vehicle control system 100. In some embodiments, the sub-control system 101 can additionally acquire platform data 108 (e.g., map data 110) from local or remote memory. The sub-control system 101 can generate control outputs for controlling the autonomous vehicle (e.g., via platform control device 112, etc.) based on sensor data 104, map data 110, or other data. The sub-control system 101 can include different subsystems to perform various autonomous operations. These subsystems may include a positioning system 130, a perception system 140, a planning system 150, and a control system 160. The positioning system 130 determines the location of the autonomous vehicle in its environment; the perception system 140 detects, classifies, and tracks objects and participants in the environment; the planning system 150 determines the trajectory of the autonomous vehicle; and the control system 160 converts the trajectory into vehicle controls for controlling the autonomous vehicle. The sub-control system 101 can be implemented by one or more onboard computing systems. Each subsystem can include one or more processors and one or more storage devices. The one or more storage devices can store instructions executable by the one or more processors to cause the one or more processors to perform operations or functions associated with the subsystem. The computing resources of the sub-control system 101 can be shared among its subsystems, or each subsystem can have a dedicated set of computing resources.

[0048] In some embodiments, the autonomous vehicle control system 100 can be implemented for or by an autonomous vehicle (e.g., a ground-based autonomous vehicle). The autonomous vehicle control system 100 is capable of performing various processing techniques on inputs (e.g., sensor data 104, map data 110) to perceive and understand the vehicle's surroundings and generate a set of appropriate control outputs to execute a vehicle motion plan (e.g., including one or more trajectories) for traversing the vehicle's surroundings. In some embodiments, the autonomous vehicle implementing the autonomous vehicle control system 100 is able to drive, navigate, operate, etc., with little or no human operator (e.g., driver, pilot, etc.) interaction.

[0049] In some implementations, the autonomous vehicle can be configured to operate in multiple operating modes. For example, the autonomous vehicle can be configured to operate in a fully automatic (e.g., driverless, etc.) operating mode, in which the autonomous platform can be controlled without user input (e.g., driving and navigation without input from a human operator present in or remotely operating the autonomous vehicle). The autonomous vehicle can operate in a semi-automatic operating mode, in which it can operate with some input from a human operator present in or remotely operating the autonomous platform. In some implementations, the autonomous vehicle can enter a manual operating mode, in which the autonomous vehicle is entirely controlled by a human operator (e.g., a human driver, etc.) and autonomous navigation (e.g., autonomous, etc.) may be prohibited or disabled (e.g., temporarily, permanently, etc.). The autonomous vehicle can be configured to operate in other modes, such as parking or sleep modes (e.g., between tasks such as waiting for a trip / service, charging, etc.). In some implementations, the autonomous vehicle can implement vehicle operation assistance technologies (e.g., collision mitigation systems, power-assisted steering, etc.), for example, to assist the human operator of the autonomous platform (e.g., during manual mode, etc.).

[0050] The autonomous vehicle control system 100 can be located on (e.g., on or inside) an autonomous vehicle and can be configured to operate the autonomous vehicle in various environments. The environment can be a real-world environment or a simulated environment. In some embodiments, one or more simulation computing devices can simulate one or more of the following: sensor 102, sensor data 104, communication interface 106, platform data 108, or platform control device 112, for simulating the operation of the autonomous vehicle control system 100.

[0051] In some embodiments, the sub-control system 101 is capable of communicating with one or more networks or other systems having a communication interface 106. The communication interface 106 may include any suitable component for interfacing with one or more networks, including, for example, a transmitter, receiver, port, controller, antenna, or other suitable component that can help facilitate communication. In some embodiments, the communication interface 106 may include multiple components (e.g., antenna, transmitter, or receiver, etc.) that allow it to implement and utilize various communication technologies (e.g., multiple-input multiple-output (MIMO) technology, etc.).

[0052] In some implementations, the sub-control system 101 can communicate with one or more computing devices remote from the autonomous vehicle via one or more networks using the communication interface 106. For example, in some examples, one or more inputs, data, or functions of the sub-control system 101 can be supplemented or replaced by a remote system communicating via the communication interface 106. For example, in some implementations, map data 110 can be downloaded to a remote system via a network using the communication interface 106. In some examples, one or more of the positioning system 130, sensing system 140, planning system 150, or control system 160 can be updated, influenced, prompted, communicated, etc., by the remote system for assistance, maintenance, situational response coverage, management, etc.

[0053] Sensor 102 can be located on an autonomous platform. In some embodiments, sensor 102 can include one or more types of sensors. For example, one or more sensors can include image capture devices (e.g., visible spectrum cameras, infrared cameras, etc.). Additionally or alternatively, sensor 102 can include one or more depth capture devices. For example, sensor 102 can include one or more LiDAR sensors or Radio Sounding and Ranging (RADAR) sensors. Sensor 102 can be configured to generate point data describing at least a portion of a 360-degree view of the surrounding environment. The point data can be point cloud data (e.g., 3D LiDAR point cloud data, RADAR point cloud data). In some embodiments, one or more sensors 102 for capturing depth information can be fixed to a rotating device to rotate the sensor 102 about an axis. While rotating about this axis, sensor 102 can capture data in the form of spaced sector packets describing different portions of a 360-degree view of the environment surrounding the autonomous platform. In some embodiments, one or more sensors 102 for capturing depth information can be solid-state.

[0054] Sensor 102 can be configured to capture sensor data 104 that indicates or otherwise correlates with at least a portion of the autonomous vehicle's environment. Sensor data 104 can include image data (e.g., 2D camera data, video data, etc.), RADAR data, LIDAR data (e.g., 3D point cloud data, etc.), audio data, or other types of data. In some embodiments, sub-control system 101 can acquire input from other types of sensors, such as inertial measurement units (IMUs), altimeters, inclinometers, odometers, position or positioning devices (e.g., GPS, compasses), wheel encoders, or other types of sensors. In some embodiments, sub-control system 101 can acquire sensor data 104 associated with specific components or systems of the autonomous vehicle. Sensor data 104 can indicate, for example, wheel speed, component temperature, steering angle, cargo or passenger status, etc. In some embodiments, sub-control system 101 can acquire sensor data 104 associated with environmental conditions (such as natural environment or weather conditions). In some embodiments, sensor data 104 can include multimodal sensor data. Multimodal sensor data can be acquired by at least two different types of sensors (e.g., sensor 102) and can indicate static and / or dynamic objects or participants within the autonomous vehicle's environment. The multimodal sensor data can include at least two types of sensor data (e.g., camera and LiDAR data). In some embodiments, the autonomous vehicle can utilize sensor data 104 from sensors located remotely (e.g., outside the vehicle). This can include, for example, sensor data 104 captured by different autonomous vehicles.

[0055] The sub-control system 101 is capable of acquiring map data 110 associated with the environment in which the autonomous vehicle has been, is, or will be located. Map data 110 can provide information about the environment or geographic area. For example, map data 110 can provide information about the identification and location of different access roads (e.g., roads), access road segments (e.g., road sections), buildings or other items or objects (e.g., lampposts, crosswalks, curbs, etc.); the location and direction of boundaries or boundary markers (e.g., traffic lanes, parking lanes, turning lanes, bicycle lanes, other lanes, etc.); traffic control data (e.g., the location and indication of signs, traffic lights, other traffic control equipment, etc.); obstacle information (e.g., temporary or permanent closures, etc.); event data (e.g., road closures / traffic rule changes due to parades, concerts, sporting events, etc.); nominal vehicle path data (e.g., indicating an ideal vehicle path, such as along the center of a lane, etc.); or any other map data that provides information that helps the autonomous vehicle understand its surrounding environment and its relationships. In some embodiments, map data 110 can include high-precision map information. Additionally or alternatively, map data 110 may include sparse map data (e.g., lane maps). In some implementations, sensor data 104 may be fused with map data 110 or used to update map data 110 in real time.

[0056] The sub-control system 101 may include a positioning system 130, which provides the autonomous vehicle with an understanding of its position and orientation in the environment. In some examples, the positioning system 130 may support one or more other subsystems of the sub-control system 101, such as by providing a unified local reference frame for performing operations such as sensing, planning, or control.

[0057] In some implementations, positioning system 130 is capable of determining the current position of the autonomous vehicle. The current position can include a global position (e.g., relative to a geographic reference anchor) or a relative position (e.g., relative to objects in the environment). Positioning system 130 can typically include, or interface with, any device or circuitry used to analyze the autonomous vehicle's position or position changes. For example, positioning system 130 can determine its position using one or more of the following: inertial sensors (e.g., inertial measurement units, etc.), satellite positioning systems, radio receivers, network devices (e.g., based on IP addresses, etc.), triangulation or proximity to network access points or other network components (e.g., cell towers, Wi-Fi access points, etc.), or other suitable technologies. The autonomous vehicle's position can be used by various subsystems of subcontrol system 101 or provided to a remote computing system (e.g., using communication interface 106).

[0058] In some implementations, the positioning system 130 is capable of registering the relative positions of environmental elements surrounding the autonomous vehicle with positions recorded in map data 110. For example, the positioning system 130 can process sensor data 104 (e.g., LiDAR data, RADAR data, camera data, etc.) to align or otherwise register to a map of the surrounding environment (e.g., from map data 110) to understand the autonomous vehicle's position within that environment. Therefore, in some implementations, the autonomous vehicle can identify its position in the surrounding environment (e.g., across six axes, etc.) based on a search of map data 110. In some implementations, given an initial position, the positioning system 130 can update the autonomous vehicle's position through incremental realignment based on a recorded or estimated deviation from the initial position. In some implementations, the position can be directly registered in map data 110.

[0059] In some implementations, map data 110 can include a large amount of data subdivided into geographic tiles, enabling the reconstruction of a desired area of ​​a map stored in map data 110 from one or more tiles. For example, multiple tiles selected from map data 110 can be stitched together by sub-control system 101 based on a location obtained by positioning system 130 (e.g., a number of tiles selected near the location).

[0060] In some implementations, the positioning system 130 is capable of determining the location (e.g., relative or absolute) of one or more attachments or accessories to the autonomous vehicle. For example, the autonomous vehicle may be associated with a cargo platform, and the positioning system 130 may provide the location of one or more points on the cargo platform. For example, the cargo platform may include trailers or other equipment towed or otherwise attached to or manipulated by the autonomous vehicle, and the positioning system 130 may provide data describing the location (e.g., absolute, relative, etc.) of the autonomous vehicle and the cargo platform. Other autonomous systems may acquire such information to assist in operating the autonomous vehicle.

[0061] The sub-control system 101 may include a sensing system 140 that allows the autonomous platform to detect, classify, and track objects and participants in its environment. The environmental features or objects sensed in the environment may be those located within the field of view of sensor 102, or those predicted to be occluded by sensor 102. This may include objects that are not moving or are predicted not to move (static objects) or objects that are moving or are predicted to be moving (dynamic objects / participants).

[0062] The perception system 140 is capable of determining one or more states (e.g., current or past states, etc.) of one or more objects in the environment surrounding the autonomous vehicle. For example, a state can describe (e.g., for a given time, time period, etc.) an estimate of the object's current or past location (also called localization); current or past speed / rate; current or past acceleration; current or past heading; current or past orientation; size / footprint (e.g., represented by boundary shape, object highlighting, etc.); classification (e.g., pedestrian category vs. vehicle category vs. bicycle category, etc.); associated uncertainties; or other state information. In some embodiments, the perception system 140 is capable of using one or more algorithms or machine learning models configured to identify / classify objects based on input from sensor 102 to determine the state. The perception system is capable of using sensor data 104 in different modes to generate a representation of the environment for processing by one or more algorithms or machine learning models. In some embodiments, as the autonomous vehicle continues to perceive or interact with these objects (e.g., maneuvering with or around them, yielding, etc.), the state of one or more identified or unidentified objects can be maintained and updated over time. In this way, the perception system 140 is able to provide an understanding of the current state of the environment (e.g., including objects therein) based on previous state records of the environment (e.g., including the movement history of objects therein). This information is helpful when the autonomous vehicle plans its movement in the environment.

[0063] The sub-control system 101 may include a planning system 150, which can be configured to determine how the autonomous platform interacts with and moves within its environment. The planning system 150 can determine one or more motion plans for the autonomous platform. The motion plan may include one or more trajectories (e.g., motion trajectories) indicating the path the autonomous vehicle should follow. The trajectory may have a certain length or time range. The length or time range may be defined by a calculated planning horizon of the planning system 150. The motion trajectory may be defined by one or more waypoints (with associated coordinates). Waypoints may be the future locations of the autonomous platform. The motion plan can be continuously generated, updated, and considered by the planning system 150.

[0064] The planning system 150 is capable of determining the strategy of the autonomous platform. The strategy can be a set of discrete decisions made by the autonomous platform (e.g., yielding to a participant, yielding to a participant in reverse, merging, changing lanes). The strategy can be selected from multiple potential strategies. The selected strategy can be the lowest-cost strategy, as determined by one or more cost functions. The cost function can, for example, evaluate the probability of a collision with another participant or object.

[0065] Planning system 150 is capable of determining the desired trajectory for executing a strategy. For example, planning system 150 can obtain one or more trajectories for executing one or more strategies. Planning system 150 can evaluate trajectories or strategies (e.g., using scores, costs, rewards, constraints, etc.) and rank them. For example, planning system 150 can inform the evaluation of candidate trajectories or strategies for the autonomous platform using predicted outputs indicating interactions between the autonomous platform's trajectory and one or more objects (e.g., proximity, intersection, etc.). In some implementations, planning system 150 can evaluate the autonomous platform's trajectory using static costs (e.g., "avoiding lane boundaries," "minimizing sprints," etc.). Additionally or alternatively, planning system 150 can evaluate the autonomous platform's trajectory or strategy using dynamic costs based on predictions of the current operating scenario (e.g., predicted trajectories or strategies leading to interactions between participants, predicted trajectories or strategies leading to interactions between participants and the autonomous platform, etc.). Planning system 150 can rank trajectories based on one or more static costs, one or more dynamic costs, or a combination thereof. The planning system 150 is able to select a motion plan (and corresponding trajectory) based on the ranking of multiple candidate trajectories. In some implementations, the planning system 150 is able to select the highest-ranked candidate, or the highest-ranked feasible candidate.

[0066] The planning system 150 can then validate the selected trajectory against one or more constraints before the trajectory is executed by the autonomous platform.

[0067] To assist its motion planning decisions, the planning system 150 can be configured to perform predictive functions. The planning system 150 can predict the future state of the environment. This can include predicting the future states of other participants in the environment. In some embodiments, the planning system 150 can predict the future state based on the current or past state (e.g., the state in which the perception system 140 was developed or maintained). In some embodiments, the future state can be a predicted trajectory (e.g., position over time) of an object in the environment (such as other participants) or include that predicted trajectory. In some embodiments, one or more future states can include one or more probabilities associated with them (e.g., marginal probabilities, conditional probabilities). For example, one or more probabilities can include one or more probabilities conditioned on the strategies or trajectory options available to the autonomous vehicle. Additionally or alternatively, probabilities can include probabilities conditioned on the trajectory options available to one or more other participants.

[0068] To execute the selected motion plan, the sub-control system 101 may include a control system 160 (e.g., a vehicle control system). Typically, the control system 160 provides an interface between the sub-control system 101 and the platform control device 112 to implement the strategies and motion plans generated by the planning system 150. For example, the control system 160 can implement the selected motion plan / trajectory to control the movement of the autonomous platform in its environment by following the selected trajectory (e.g., waypoints included). The control system 160 can, for example, translate the motion plan into instructions (e.g., acceleration control, braking control, steering control, etc.) for the corresponding platform control device 112. For instance, the control system 160 can translate the selected motion plan into instructions to adjust steering components (e.g., steering angle) by a certain degree, apply a certain amount of braking force, increase / decrease speed, etc. In some embodiments, the control system 160 can communicate with the platform control device 112 via a communication channel, which may include, for example, one or more data buses (e.g., Controller Area Network (CAN), on-board diagnostic connectors (e.g., OBD-II), or a combination of wired / wireless communication links. The platform control device 112 can send or receive data, messages, signals, etc. to or from the sub-control system 101 via a communication channel (and vice versa).

[0069] The sub-control system 101 can receive auxiliary signals from the remote assistance system 170 via communication interface 106. The remote assistance system 170 can communicate with the sub-control system 101 via a network. In some embodiments, the sub-control system 101 can initiate a communication session with the remote assistance system 170. For example, the sub-control system 101 can initiate a session based on or in response to a trigger. In some embodiments, the trigger can be an alarm, error signal, map feature, request, location, traffic conditions, road conditions, etc.

[0070] After initiating a session, the sub-control system 101 can provide context data to the remote assistance system 170. Context data can include sensor data 104 and state data of the autonomous vehicle. For example, context data can include real-time camera feedback from the autonomous vehicle's cameras and the current speed of the autonomous vehicle. The operator of the remote assistance system 170 (e.g., a human operator) can use the context data to select assistance signals. Assistance signals can provide the sub-control system 101 with values ​​or adjustments to various operating parameters or characteristics. For example, assistance signals can include waypoints (e.g., paths around obstacles, lane changes, etc.), speed or acceleration profiles (e.g., speed limits, etc.), relative motion commands (e.g., platooning, etc.), operating characteristics (e.g., using assistance systems, energy-saving processing modes, etc.), or other signals assisting the sub-control system 101.

[0071] The sub-control system 101 can use auxiliary signals as input to one or more autonomous subsystems performing autonomous functions. For example, the planning system 150 can receive auxiliary signals as input for generating a motion plan. For example, the auxiliary signals can include constraints for generating the motion plan. Additionally or alternatively, the auxiliary signals can include cost or reward adjustments that affect the motion planning of the planning system 150. Additionally or alternatively, the auxiliary signals can be considered by the sub-control system 101 as suggestive inputs to be considered together with other received data (e.g., sensor inputs, etc.).

[0072] The sub-control system 101 can be platform-independent, and the control system 160 can provide control commands to the platform control device 112 for various autonomous mobile platforms (e.g., multiple different autonomous platforms equipped with autonomous control systems). This can include various types of autonomous vehicles from different manufacturers / developers (e.g., cars, vans, SUVs, trucks, electric vehicles, gasoline vehicles, etc.), which operate in various environments and, in some implementations, perform one or more vehicle services.

[0073] Figure 2 This is a block diagram of an example environment for a LiDAR sensor system for autonomous vehicles according to some embodiments. The environment includes a LiDAR system 200, which includes a transmit (Tx) path and a receive (Rx) path. The Tx path includes one or more Tx input / output ports, while the Rx path includes one or more Rx input / output ports. In some embodiments, a semiconductor substrate and / or semiconductor package may include the Tx path and the Rx path. In some embodiments, the semiconductor substrate and / or semiconductor package can include at least one of silicon photonics circuitry, a programmable logic controller (PLC), or a group III-V semiconductor circuit.

[0074] In some implementations, the first semiconductor substrate and / or the first semiconductor package may include a Tx path, while the second semiconductor substrate and / or the second semiconductor package may be able to include an Rx path. In some arrangements, Rx input / output ports and / or Tx input / output ports may appear (or be formed / set / positioned / placed) on one or more edges of one or more semiconductor substrates and / or semiconductor packages.

[0075] LIDAR system 200 includes one or more transmitters 220 and one or more receivers 222. LIDAR system 200 further includes one or more optical elements 210 (e.g., oscillating scanners, unidirectional scanners, Risley prisms, circulator optics, and / or beam collimators, etc.) coupled to LIDAR system 200 (e.g., transmitters 220 and / or receivers 222). In some embodiments, one or more optical elements 210 may be coupled to a Tx path via one or more Tx input / output ports. In some embodiments, one or more optical elements 210 may be coupled to an Rx path via one or more Rx input / output ports.

[0076] The LIDAR system 200 can be coupled to one or more sub-control systems 101 (e.g., Figure 1 (Sub-control system 101 in the system). In some embodiments, sub-control system 101 may be coupled to the Rx path via one or more Rx input / output ports. For example, sub-control system 101 may be able to receive LIDAR output from LIDAR system 200. Sub-control system 101 may be able to control the vehicle (e.g., autonomous vehicle) based on the LIDAR output.

[0077] The Tx path may include a light source 202, modulator 204A, modulator 204B, amplifier 206, and one or more transmitters 220. The Rx path may include one or more receivers 222, mixer 208, detector 212, transimpedance amplifier (TIA) 214, and one or more analog-to-digital converters (ADCs). Although Figure 2 Only a specific number of components and a single input / output channel are shown, but the LIDAR system 200 can contain any number of components and / or input / output channels (in any combination) interconnected in any configuration to facilitate the integration of multiple functions of the LIDAR system to support vehicle operation.

[0078] The light source 202 can be configured to generate an optical signal (or beam) originating from (or associated with) a local oscillator (LO) signal. In some embodiments, the optical signal may have an operating wavelength equal to or substantially equal to 1550 nanometers. In some embodiments, the optical signal may have an operating wavelength between 1400 nanometers and 1440 nanometers.

[0079] Light source 202 can be configured to provide an optical signal to modulator 204A, which is configured to modulate the phase and / or frequency of the optical signal based on a first radio frequency (RF) signal (e.g., "RF1" signal) to generate a modulated optical signal, such as by continuous wave (CW) modulation or quasi-CW modulation. Modulator 204A can be configured to send the modulated optical signal to amplifier 206. Amplifier 206 can be configured to amplify the modulated optical signal to generate an amplified optical signal to be provided to optical element 210 via one or more transmitters 220. One or more transmitters 220 may include one or more optical waveguides or antennas. In some embodiments, the bandwidth of modulator 204A and / or modulator 204B may be between 400 MHz and 1000 MHz.

[0080] According to an example aspect of this disclosure, modulator 204A, modulator 204B, and / or amplifier 206 can be disposed in photonic integrated circuit (PIC) 230. Photonic integrated circuit 230 can include one or more semiconductor devices (e.g., modulators 204A / 204B and / or amplifier 206) formed on a common substrate. Furthermore, the different semiconductor devices can have different semiconductor stacks. For example, modulator 204A can have a first semiconductor stack, while amplifier 206 can have a second semiconductor stack. Additionally or alternatively, amplifier can be formed of a group III-V semiconductor stack, while modulator 204 can be formed of another semiconductor material (e.g., silicon).

[0081] Optical element 210 can be configured to redirect the amplified optical signal received from the Tx path toward the object 218 within a given field of view, receive the return signal reflected from the object 218, and provide the return signal to mixer 208 of the Rx path via one or more receivers 222. The one or more receivers 222 may include one or more optical waveguides or antennas. In some arrangements, transmitter 220 and receiver 222 may together constitute one or more transceivers. In some arrangements, the one or more transceivers may include single-base transceivers or dual-base transceivers.

[0082] Light source 202 can be configured to provide an LO signal to modulator 204B, which is configured to modulate the phase and / or frequency of the LO signal based on a second RF signal (e.g., the "RF2" signal) to generate a modulated LO signal (e.g., using continuous wave (CW) modulation or quasi-CW modulation), and send the modulated LO signal to mixer 208 in the Rx path. Mixer 208 can be configured to mix the modulated LO signal with a return signal (e.g., combine, multiply, etc.) to generate a down-converted signal and send it to detector 212.

[0083] In some arrangements, mixer 208 may be configured to send a modulated LO signal to detector 212. Detector 212 may be configured to generate an electrical signal based on the down-converted signal and send the electrical signal to TIA 214. In some arrangements, detector 212 may be configured to generate an electrical signal based on the down-converted signal and the modulated signal. TIA 214 may be configured to amplify the electrical signal and send the amplified electrical signal to sub-control system 101 via one or more ADCs 224. In some embodiments, TIA 214 may have a peak noise equivalent power (NEP) of less than 5 picowatts per square root hertz (i.e., 5 x 10⁻¹² watts per square root hertz). In some embodiments, the gain of TIA 214 may be between 4 kiloohms and 25 kiloohms. In some embodiments, the 3 dB bandwidth of detector 212 and / or TIA 214 may be between 80 kilohertz (kHz) and 450 megahertz (MHz).

[0084] The sub-control system 101 can be configured to determine the distance to the object 218 and / or measure the speed of the object 218 based on one or more electrical signals received from the TIA via one or more ADCs 224.

[0085] Figure 3 An exemplary photonic integrated circuit 300 (PIC 300) according to some embodiments of the present disclosure is depicted. The PIC 300 can be included in a LIDAR system, such as... Figure 2 The LIDAR system 200.

[0086] PIC 300 may include a semiconductor die 330. The semiconductor die 330 may include a substrate having two or more semiconductor devices directly formed on it. For example, in some embodiments, the semiconductor devices may be formed separately on a common substrate of the semiconductor die 330. The substrate, semiconductor devices, and / or semiconductor die may be formed of a III-V semiconductor material, such as indium phosphide (InP), gallium arsenide (GaAs), indium arsenide (InAs), gallium nitride (GaN), or indium antimonide (InSb).

[0087] According to an exemplary aspect of this disclosure, the respective semiconductor stacks of one or more semiconductor devices of semiconductor die 330 can be isolated, such as electrically and / or physically isolated. For example, the respective semiconductor stacks may not be coupled by any mating joints or other bonding processes. For example, in conventional manufacturing processes, different semiconductor stacks can be bonded together by mating joints or other bonding processes to assemble a PIC. Instead, these semiconductor stacks are formed directly on a common substrate by a manufacturing process such as MOVCD, wherein a layer of the semiconductor stack is formed on each semiconductor device (e.g., by a deposition process) and then etched away from the semiconductor stacks of those devices that do not contain that layer.

[0088] Semiconductor die 330 can be coupled to at least one photonic die. For example, semiconductor die 330 can be coupled to a first photonic die 310 via a first optical interface 303. Semiconductor die 330 can also be additionally or alternatively coupled to a second photonic die 350 via a second optical interface 305. Optical interfaces 303, 305 can be configured to allow waveguides, lenses, or other structures to transmit signals (e.g., electrical signals, optical signals, or laser signals, etc.) between semiconductor die 330 and the first and second photonic dies 310, 350. Photonic dies 310, 350 can be silicon photonic dies. For example, photonic dies 310, 350 can be formed on a silicon substrate and / or formed from a silicon layer.

[0089] Components depicted on the first photonic chip 310 and the second photonic chip 350, such as Figure 3 The arrangement shown is for the purpose of illustrating exemplary aspects of this disclosure. Those skilled in the art will understand that some components depicted on the first photonic die 310 can be positioned on the second photonic die 350, and some components depicted on the second photonic die 350 can also be positioned on the first photonic die 310, without departing from this disclosure. Furthermore, more or fewer photonic dies can be coupled to the semiconductor die 330 without departing from this disclosure.

[0090] The first photonic die 310 may include a light source (e.g., a laser source) 302 signal or otherwise communicate with a light source (e.g., a laser source) 302 signal. The laser source 302 may be configured to provide a light beam (e.g., a laser beam) to the first photonic die 310 and the PIC 300. In some embodiments, a local oscillator (LO) output 352 may be derived from the laser source 302. The LO output 352 may be equivalent to the laser source 302, or may be modulated by the laser source 302 (e.g., via a method such as...). Figure 2(e.g., a modulator 204B or similar LO modulator). In particular, the first photonic die 310 may include a splitter 304 configured to separate the beam from the laser source 302 into a first beam provided to the LO output 352 and a second beam provided to other components of the PIC 300.

[0091] Laser source 302 can provide a light beam to modulator 306 (e.g., phase modulator). Modulator 306 can be configured to modulate the light beam to modify its phase and / or frequency. In some embodiments, modulator 306 can be a silicon phase modulator. Modulator 306 can modulate the light beam, for example, using continuous wave (CW) modulation or quasi-continuous wave (quasi-CW) modulation. In some embodiments, modulator 306 can be disposed on first photonic die 310.

[0092] A light beam can be provided to one or more channels 332 of the semiconductor die 330. For example, channel 332 can be, may contain, or may be part of a semiconductor device of the semiconductor die 330, configured to modify the light beam (e.g., modulate, amplify, etc.) as the light beam passes through channel 332. For example, channel 332 can be or may contain an amplification channel configured to amplify the light beam as it passes through channel 332. As another example, channel 332 can be or may contain a modulation channel configured to modify the light beam as it passes through channel 332.

[0093] PIC 300 (e.g., first photonic die 310) may include a power distribution network 312. The power distribution network 312 may be configured to distribute a light beam to channels 332 of the semiconductor die 330. For example, the power distribution network 312 may distribute the light beam between channels 332 based on the power requirements of the LIDAR system. Furthermore, in some embodiments, PIC 300 (e.g., second photonic die 350) may include a splitter 356 located along the path of the light beam through PIC 300 and prior to the power distribution network 312. Including the splitter 356 can reduce the separation intensity subsequently performed by the power distribution network 312, which in turn can improve the saturation of the amplifier in channels 332.

[0094] The PIC 300 may further include a transmitter configured to receive or communicate with a light beam from the semiconductor die 330. For example, in some embodiments, the second photonic die 350 may include a transmitter ( Figure 3(Not shown in the image), it is configured to receive a light beam from a semiconductor die 330 (e.g., channel 332 of the semiconductor die 330). The second photonic die 350 may include one or more Tx outputs 354 (e.g., Tx0, Tx1, etc.) corresponding to the output channels of the LIDAR system. The Tx outputs 354 may be provided to the transmitter and optics to emit a light beam from the LIDAR system.

[0095] Furthermore, in some embodiments, the photonic die (e.g., photonic die 350) can include a receiver configured to receive a reflected light beam from one or more optical elements. The reflected light beam can be reflected back from a target. For example, the optical elements can emit a light beam from a transmitter toward a target and be reflected by that target. The optical elements can capture the reflected light beam and provide it to the receiver. In some embodiments, the transmitter and receiver can be co-located on a common photonic die (e.g., a transceiver die).

[0096] In some embodiments, the semiconductor die 330 can have a specific facet. The input of at least a first channel of one or more channels and the output of at least a second channel of one or more channels can be positioned on this specific facet of the semiconductor die 330. For example, the input of the first channel and the output of the second channel can be positioned on the same facet (e.g., the same side) of the semiconductor die 330. In this way, the PIC 300 can include one or more "U-turns" such that an optical signal input at the first channel is redirected back toward the input direction when it is output at the second channel. For example, one or more waveguides on the semiconductor die 330 (and / or on the photonic die 310 or 350) can adjust the propagation direction of a beam input in a first direction to a second direction that is substantially opposite to and substantially parallel to the first direction. In this way, the light guided by the waveguide performs a "U-turn" back toward the input (e.g., toward the photonic die 310 or 350).

[0097] Figure 4 An exemplary photonic integrated circuit 400 according to some embodiments of the present disclosure is depicted. The PIC 400 can be included in, for example... Figure 2 In LiDAR systems such as the 2000, etc.

[0098] PIC 400 may include a semiconductor die 430. The semiconductor die 430 may include a substrate having two or more semiconductor devices directly formed on it. For example, in some embodiments, the semiconductor devices may be formed separately on a common substrate of the semiconductor die 430. The substrate, semiconductor devices, and / or semiconductor die may be formed of a III-V semiconductor material, such as indium phosphide (InP), gallium arsenide (GaAs), indium arsenide (InAs), gallium nitride (GaN), or indium antimonide (InSb).

[0099] According to an exemplary aspect of this disclosure, the respective semiconductor stacks of one or more semiconductor devices of semiconductor die 430 can be isolated, such as electrically and / or physically isolated. For example, the respective semiconductor stacks may not be coupled by any mating joints or other bonding processes. For example, in conventional manufacturing processes, different semiconductor stacks can be bonded together by mating joints or other bonding processes to assemble a PIC. Instead, these semiconductor stacks are formed directly on a common substrate by a manufacturing process such as MOVCD, wherein a layer of the semiconductor stack is formed on each semiconductor device (e.g., by a deposition process) and then etched away from the semiconductor stacks of those devices that do not contain that layer.

[0100] Semiconductor die 430 can be coupled to at least one photonic die. For example, semiconductor die 430 can be coupled to a first photonic die 410 via a first optical interface 403. Semiconductor die 430 can also be additionally or alternatively coupled to a second photonic die 450 via a second optical interface 405. Optical interfaces 403, 405 can be configured to enable waveguides, lenses, or other structures for transmitting signals (e.g., electrical signals, optical signals, or laser signals) between semiconductor die 430 and the first and second photonic dies 410, 450. Photonic dies 410, 450 can be silicon photonic dies. For example, photonic dies 410, 450 can be formed on a silicon substrate and / or formed from a silicon layer.

[0101] Components depicted on the first photonic die 430 and the second photonic die 450, such as Figure 4 The arrangement shown is for the purpose of illustrating exemplary aspects of this disclosure. Those skilled in the art will understand that some components depicted on the first photonic die 410 can be positioned on the second photonic die 450, and some components depicted on the second photonic die 450 can also be positioned on the first photonic die 410, without departing from this disclosure. Furthermore, more or fewer photonic dies can be coupled to the semiconductor die 430 without departing from this disclosure.

[0102] The first photonic die 410 may include a light source (e.g., a laser source) 402 signal or otherwise communicate with a light source (e.g., a laser source) 402 signal. The laser source 402 may be configured to provide a light beam (e.g., a laser beam) to the first photonic die 410 and the PIC 400. In some embodiments, a local oscillator (LO) output 452 may be derived from the laser source 402. The LO output 452 may be equivalent to the laser source 402, or may be modulated by the laser source 402 (e.g., via a method such as...). Figure 2 (e.g., a modulator 204B or similar LO modulator). In particular, the first photonic die 410 may include a splitter 404 configured to split the beam from the laser source 402 into a first beam provided to the LO output 452 and a second beam provided to other components of the PIC 400.

[0103] Laser source 402 can provide a light beam to modulator 406 (e.g., a phase modulator). Modulator 406 can be configured to modulate the light beam to modify its phase and / or frequency. In some embodiments, modulator 406 can be a silicon phase modulator. Modulator 406 can modulate the light beam, for example, using continuous wave (CW) modulation or quasi-continuous wave (quasi-CW) modulation. In some embodiments, modulator 406 can be disposed on first photonic die 410.

[0104] A light beam can be provided to one or more channels 435 of the semiconductor die 430. For example, channel 435 can be, may contain, or may be part of a semiconductor device of the semiconductor die 430, configured to modify the light beam (e.g., modulate, amplify, etc.) as the light beam passes through channel 435. For example, channel 435 can be or may contain an amplification channel configured to amplify the light beam as it passes through the channel. As another example, channel 435 can be or may contain a modulation channel configured to modify the light beam as it passes through channel 435.

[0105] The PIC 400 (e.g., a first photonic die 410) can include a power distribution network 412. The power distribution network 412 can be configured to distribute a light beam to channels 435 of the semiconductor die 430. For example, the power distribution network 412 can distribute the light beam between channels 435 based on the power requirements of the LIDAR system. Furthermore, in some embodiments, the PIC 400 (e.g., a second photonic die 450) can include a splitter 456 located along the path of the light beam through the PIC 400 and prior to the power distribution network 412. Including the splitter 456 can reduce the separation intensity subsequently performed by the power distribution network 412, which in turn can improve the saturation of the amplifier in the channels 435.

[0106] exist Figure 4 In the illustrated exemplary PIC 400, semiconductor devices can be associated with preamplifier stage 439 and amplifier stage 440. Preamplifier stage 439 can include one or more semiconductor devices (e.g., each having one or more channels) configured to amplify the beam to a specific amplitude before amplifier stage 440. This specific amplitude can be greater than the amplitude of the beam from laser source 402, but less than the amplitude requirements of the LIDAR system. Including preamplifier stage 439 can improve the saturation of the amplifier in amplifier stage 440.

[0107] For example, such as Figure 4 As shown, preamplifier stage 439 may include an LO channel 432 configured to provide an LO signal 432 from a first photonic die 410 (e.g., from splitter 404) to an LO output 452 on a second photonic die 450. Additionally, channel 434 may be configured to deliver a modulated beam from modulator 406 to splitter 456. Channel 436 may deliver a split beam from splitter 456 to an input of power distribution network 412. Each of channels 432, 434, and 436 of preamplifier stage 439 may have an associated gain. The gain of a channel in preamplifier stage 439 may be less than the gain of a channel in amplifier stage 440. For example, in some embodiments, the gain of a channel in preamplifier stage 439 may be from about 5 mW per channel to about 50 mW per channel, such as from about 10 mW per channel to about 30 mW per channel.

[0108] The PIC 400 may further include a transmitter configured to receive or communicate with a light beam from the semiconductor die 430. For example, in some embodiments, the second photonic die 450 may include a transmitter ( Figure 4 (Not shown in the image), it is configured to receive a light beam from a semiconductor die 430 (e.g., channel 435 of semiconductor die 430). The second photonic die 450 may include one or more Tx outputs 454 (e.g., Tx0, Tx1, etc.) corresponding to the output channels of the LIDAR system. The Tx outputs 454 may be provided to the transmitter and optics to emit a light beam from the LIDAR system.

[0109] like Figure 4As shown, amplifier stage 440 may include one or more channels 438 configured to amplify the beam provided to Tx output 454. For example, each of the channels 438 may be or contain an optical amplifier with gain. The gain of the channels 438 of amplifier stage 440 may be greater than the gain of the channels of preamplifier stage 439. For example, in some embodiments, the gain of channel 438 may be from about 100 mW per channel to about 350 mW per channel, such as from about 150 mW per channel to about 200 mW per channel.

[0110] Furthermore, in some embodiments, the photonic die (e.g., photonic die 450) can include a receiver configured to receive a reflected beam of light from one or more optical elements. The reflected beam can be reflected back from a target. For example, the optical elements can emit a beam of light from a transmitter toward a target and be reflected by that target. The optical elements can capture the reflected beam and provide it to the receiver. In some embodiments, the transmitter and receiver can be co-located on a common photonic die (e.g., a transceiver die).

[0111] Figure 5 An exemplary photonic integrated circuit 500 according to some embodiments of the present disclosure is depicted. The PIC 500 can be included in, for example... Figure 2 In LiDAR systems such as the 2000, etc.

[0112] The PIC 500 may include a semiconductor die 530. The semiconductor die 530 may include a substrate having two or more semiconductor devices directly formed on it. For example, in some embodiments, the semiconductor devices may be formed separately on a common substrate of the semiconductor die 530. The substrate, semiconductor devices, and / or semiconductor die may be formed of a III-V semiconductor material, such as indium phosphide (InP), gallium arsenide (GaAs), indium arsenide (InAs), gallium nitride (GaN), or indium antimonide (InSb).

[0113] According to an exemplary aspect of this disclosure, the respective semiconductor stacks of one or more semiconductor devices of semiconductor die 530 can be isolated, such as electrically and / or physically isolated. For example, the respective semiconductor stacks may not be coupled by any mating joints or other bonding processes. For example, in conventional manufacturing processes, different semiconductor stacks can be bonded together by mating joints or other bonding processes to assemble a PIC. Instead, these semiconductor stacks are formed directly on a common substrate by a manufacturing process such as MOVCD, wherein a layer of the semiconductor stack is formed on each semiconductor device (e.g., by a deposition process) and then etched away from the semiconductor stacks of those devices that do not contain that layer.

[0114] Semiconductor die 530 can be coupled to at least one photonic die. For example, semiconductor die 530 can be coupled to a first photonic die 510 via a first optical interface 503. Semiconductor die 530 can also be additionally or alternatively coupled to a second photonic die 550 via a second optical interface 505. Optical interfaces 503, 505 can be configured to enable waveguides, lenses, or other structures for transmitting signals (e.g., electrical signals, optical signals, or laser signals) between semiconductor die 530 and the first and second photonic dies 510, 550. Photonic dies 510, 550 can be silicon photonic dies. For example, photonic dies 510, 550 can be formed on a silicon substrate and / or formed from a silicon layer.

[0115] Components depicted on the first photonic chip 530 and the second photonic chip 550, such as Figure 5 The arrangement shown is for the purpose of illustrating exemplary aspects of this disclosure. Those skilled in the art will understand that some components depicted on the first photonic die 510 can be positioned on the second photonic die 550, and some components depicted on the second photonic die 550 can also be positioned on the first photonic die 510, without departing from this disclosure. Furthermore, more or fewer photonic dies can be coupled to the semiconductor die 530 without departing from this disclosure.

[0116] The first photonic die 510 may include a light source (e.g., a laser source) 502 signal or otherwise communicate with a light source (e.g., a laser source) 502 signal. The laser source 502 may be configured to provide a light beam (e.g., a laser beam) to the first photonic die 510 and the PIC 500. In some embodiments, a local oscillator (LO) output 552 may be derived from the laser source 502. The LO output 552 may be equivalent to the laser source 502, or may be modulated by the laser source 502 (e.g., via a method such as...). Figure 2 (e.g., a modulator 205B or similar LO modulator). In particular, the first photonic die 510 may include a splitter 504 configured to split the beam from the laser source 502 into a first beam provided to the LO output 552 and a second beam provided to other components of the PIC 500.

[0117] Laser source 502 can provide a light beam to modulator 534 (e.g., a phase modulator). Modulator 534 can be configured to modulate the light beam to modify its phase and / or frequency. In some embodiments, modulator 534 can be a silicon phase modulator. Modulator 534 can modulate the light beam, for example, using continuous wave (CW) modulation or quasi-continuous wave (quasi-CW) modulation. Figure 5In the example, modulator 534 is one of the semiconductor devices in semiconductor die 530. For example, modulator 534 can be formed of a III-V group material to improve the efficiency of modulator 534.

[0118] The light beam can be provided to one or more channels 535 of the semiconductor die 530. For example, channel 535 can be, may contain, or may be part of a semiconductor device of the semiconductor die 530, configured to modify the light beam (e.g., modulate, amplify, etc.) as the light beam passes through channel 535. For example, channel 535 can be or may contain an amplification channel configured to amplify the light beam as it passes through the channel. As another example, channel 535 can be or may contain an LO channel 532 configured to provide the light beam from laser source 502 to LO output 552.

[0119] The PIC 500 (e.g., a first photonic die 510) may include a power distribution network 512. The power distribution network 512 may be configured to distribute a light beam to channels 535 of the semiconductor die 530. For example, the power distribution network 512 may distribute the light beam between channels 535 based on the power requirements of the LIDAR system. Furthermore, in some embodiments, the PIC 500 (e.g., a second photonic die 550) may include a splitter 556 located along the path of the light beam through the PIC 500 and prior to the power distribution network 512. Including the splitter 556 can reduce the separation intensity subsequently performed by the power distribution network 512, which in turn can improve the saturation of the amplifier in the channels 535.

[0120] The PIC 500 may further include a transmitter configured to receive or communicate with a light beam from the semiconductor die 530. For example, in some embodiments, the second photonic die 550 may include a transmitter ( Figure 5 (Not shown in the image), it is configured to receive a light beam from a semiconductor die 530 (e.g., channel 535 of semiconductor die 530). The second photonic die 550 may include one or more Tx outputs 554 (e.g., Tx0, Tx1, etc.) corresponding to the output channels of the LIDAR system. The Tx outputs 554 may be provided to the transmitter and optics to emit a light beam from the LIDAR system.

[0121] The semiconductor devices of semiconductor die 530 and / or channels 535 can be associated with amplifier stage 550. Amplifier stage 540 can include one or more channels 538 configured to amplify the beam provided to Tx output 554. For example, each of the channels 538 can be or contain an optical amplifier with gain. For example, in some embodiments, the gain of the channels 538 can be from about 100 mW per channel to about 350 mW per channel, such as from about 150 mW per channel to about 200 mW per channel.

[0122] Furthermore, in some embodiments, the photonic die (e.g., photonic die 550) can include a receiver configured to receive a reflected beam of light from one or more optical elements. The reflected beam can be reflected back from a target. For example, the optical elements can emit a beam of light from a transmitter toward a target and be reflected by that target. The optical elements can capture the reflected beam and provide it to the receiver. In some embodiments, the transmitter and receiver can be co-located on a common photonic die (e.g., a transceiver die).

[0123] Figure 6 A cross-sectional view of an exemplary semiconductor die 600 according to some embodiments of the present disclosure is depicted. The semiconductor die 600 can be included in a LIDAR system (such as...). Figure 2 In the LIDAR system 200).

[0124] The semiconductor die 600 may include a first semiconductor stack 610 (e.g., corresponding to a first semiconductor device) and a second semiconductor stack 620 (e.g., corresponding to a second semiconductor device) formed on a common substrate 602. The substrate 602 may be a metal substrate or a semiconductor substrate, such as a substrate formed of crystalline silicon.

[0125] The first semiconductor stack 610 may have one or more waveguide layers 612. The second semiconductor stack 620 may have one or more waveguide layers 622. The waveguide layers 612 and 622 may be configured to allow optical signals (e.g., from a laser source) to pass through the semiconductor stacks 610 and 620. In some embodiments, the waveguide layers 612 and 622 may be formed of a III-V semiconductor material. For example, the III-V semiconductor material may be or may include indium phosphide (InP), gallium arsenide (GaAs), indium arsenide (InAs), gallium nitride (GaN), indium antimonide (InSb), or other III-V semiconductor materials. The thickness of the waveguide layers 612 and 622 may be beneficial for conductivity and heat dissipation. In some embodiments, the thickness of the waveguide layers 612 and 622 may range from about 100 micrometers to about 300 micrometers.

[0126] In some embodiments, waveguide layers 612, 622 can be separated by one or more spacer layers 613, 623. Spacer layers 613, 623 can be formed of silicon dioxide (SiO2) or other suitable materials. Spacer layers 613, 623 can have a thickness between about 1 micrometer and about 20 micrometers.

[0127] Waveguide layers 612 and 622 can provide optical modes 615 and 625 for integration with the waveguide phases of adjacent components (e.g., photonic dies). Optical modes 615 and 625 represent light intensity configuration profiles within semiconductor stacks 610 and 620.

[0128] exist Figure 6 In the example, the first semiconductor stack 610 can be a modulator and the second semiconductor stack 620 can be an amplifier. The first semiconductor stack 610 includes an n-type doped semiconductor layer 614, a p-type doped III-V semiconductor layer (e.g., InP) 616, and an insulating layer 618. The second semiconductor stack 620 includes an n-type doped III-V semiconductor layer (e.g., InP) 624, a multiple quantum well (MQW) layer 626, a p-type doped III-V semiconductor layer (e.g., InP) 627, a p-type doped III-V semiconductor layer 628, and an insulating layer 629.

[0129] Although the layers of the semiconductor stack 610 and 620 have been described above using specific materials, it should be understood that these layers can be made of other materials, including but not limited to indium phosphide (InP), gallium arsenide (GaAs), indium arsenide (InAs), gallium nitride (GaN), or indium antimonide (InSb).

[0130] The first semiconductor stack 610 and the second semiconductor stack 620 can be isolated by a deep ridge etching 604. For example, the deep ridge etching 604 can etch from the top of the semiconductor die 600 to the surface of the substrate 602. The deep ridge etching 604 can isolate the first semiconductor stack 610 from the second semiconductor stack 620, such that each stack 610, 620 acts as an independent semiconductor device. For example, light may not be able to travel from the first semiconductor stack 610 to the second semiconductor stack 620 (or vice versa) without passing through adjacent components (e.g., photonic dies).

[0131] The substrate 602 can form an antireflection layer 608 on the surface opposite to the first semiconductor stack 610 and / or the second semiconductor stack 620. The antireflection layer 608 can be formed of a material with low reflectivity, so that the antireflection layer 608 does not reflect a large amount of light incident on the semiconductor die 600.

[0132] Additionally or alternatively, in some embodiments, the antireflection layer 608 can be applied non-uniformly to the surface of the substrate 602, such that the antireflection layer 608 provides a smooth surface. For example, the thickness of the antireflection layer 608 may be non-uniform, such that the antireflection layer 608 compensates for variations in uniformity of the substrate 602 and / or semiconductor stacks 610, 620 caused by the manufacturing process, such as warpage, uneven deposition, etc.

[0133] The application of the antireflection layer 608 can facilitate the alignment between the semiconductor die 600 and other components of the LIDAR sensor system (e.g., photonic dies). For example, applying the antireflection layer 608 can align the optical modes 615, 625 of the semiconductor stacks 610, 620 with the waveguides or other signal transmission modes of adjacent components (e.g., photonic dies).

[0134] Figure 7 A cross-sectional view of an exemplary intermediate semiconductor die 700 according to some embodiments of the present disclosure is depicted. The semiconductor die 700 can be manufactured to be included in a LIDAR system (such as...). Figure 2 The semiconductor die (e.g., semiconductor die 600) in the LIDAR system 200. Specifically, Figure 7 The different growth stages in the manufacturing process of the intermediate semiconductor die 700 are described.

[0135] The semiconductor die 700 can undergo a first growth stage 710. In this stage, one or more first layers can be grown on the substrate 702. The first layers can be grown using any suitable growth or regeneration process, such as metal-organic chemical vapor deposition (MOCVD). The first layers can include one or more waveguide layers 704, one or more spacer layers 705, an n-type doped III-V semiconductor (e.g., InP) layer 706, a multiple quantum well (MQW) layer 707, and a p-type doped III-V semiconductor (e.g., InP) layer 708. For example, the first layers can correspond to layers of a first semiconductor stack (or a first plurality of semiconductor stacks) to be formed on the substrate 702. During the first growth stage 710, these layers can be formed over the entire surface of the substrate 702 exposed to the growth process. This can include portions of the substrate 702 surface that will eventually become a second semiconductor stack.

[0136] After the first growth process, at least some portions of the first layer that are not associated with the first semiconductor stack can be etched away. For example, a mask can be formed on the portions of the first layer associated with the first semiconductor stack, so that the portions of the first layer associated with the first semiconductor stack remain after the etching process is completed. Certain first layers common to each semiconductor stack (e.g., waveguide layer 704 and / or spacer layer 705) can be left unetched.

[0137] After etching away the etched portion of the first layer not associated with the first semiconductor stack, the semiconductor die 700 can undergo a second growth stage 720. During the second growth stage 720, one or more second layers are grown in the etched portion of the first layer. For example, in Figure 7 In the example, the n-type doped III-V semiconductor (e.g., InP) layer 706, the multiple quantum well (MQW) layer 707, and the p-type doped III-V semiconductor (e.g., InP) layer 708 are etched away to a certain depth (t) and replaced with an n-type doped semiconductor layer 722 in the second growth stage 720. After the second growth stage 720, a second etching process can be performed on a region of the first semiconductor stack such that no second layer exists in the first semiconductor stack after the second etching process.

[0138] Then, the semiconductor die 700 can undergo a third growth stage 730. In this stage, one or more third layers can be grown on the surface of the substrate 702 (e.g., on top of the first and / or second layers). In some embodiments, the third layer can be shared by some or all of the semiconductor stack on the semiconductor die 700. For example, the third layer can include a p-type doped III-V semiconductor layer 732 and / or an insulating layer 734.

[0139] Next, the semiconductor die 700 may undergo one or more etching processes to produce the final semiconductor die, such as... Figure 6 The 600 semiconductor die. For example. Figure 8 A cross-sectional view of an exemplary intermediate semiconductor die 800 according to some embodiments of the present disclosure is depicted. Specifically, the semiconductor die 800 may be a semiconductor die 700 that has undergone one or more etching processes. The semiconductor die 800 can be manufactured to be included in a LIDAR system (such as...). Figure 2 The PIC in the LIDAR system 200.

[0140] Specifically, Figure 8 A semiconductor die 800 is depicted having a substrate 802, one or more waveguide layers 804 and one or more spacer layers 805, a first semiconductor stack 810 (e.g., a modulator) and a second semiconductor stack 820 (e.g., an amplifier). The semiconductor die 800 is capable of undergoing a first etching process at a first etched region 832 in order to be formed by... Figure 7 Semiconductor die 700 is used to manufacture semiconductor die 800. For example, Figure 7 The semiconductor die 700 can undergo an etching process in which areas on the surface of the semiconductor die 700 not included in the first etched area 832 are masked, while the first etched area 832 is exposed to the etching process.

[0141] The first etching process can produce a semiconductor die 800 with optical modes 815 and 825. For example... Figure 8 As shown, optical modes 815 and 825 are mainly concentrated in the layer near the top of die 800, rather than as... Figure 6 It is as close to the waveguide layer as the 600 semiconductor die 804.

[0142] Then, the semiconductor die 800 can undergo a second etching process at the second etch region 834 to isolate the first semiconductor stack 810 from the second semiconductor stack 820. Additionally or alternatively, the semiconductor die 800 can undergo a third etch process at the third etch region 836 to create deep etch ridges in the waveguide layer 804. For example, the semiconductor stacks 810 and 820 can be isolated such that, as in Figure 6 In the semiconductor die 600, optical modes 815 and 825 are shifted to waveguide layer 804.

[0143] Figure 9 A flowchart is depicted of an exemplary method 900 for forming a photonic integrated circuit according to some embodiments of the present disclosure. Figure 9 Elements executed in a specific order are described for illustrative and discussion purposes. Those skilled in the art who use the disclosure provided herein will understand that elements of any of the methods discussed herein can be adapted, rearranged, expanded, omitted, combined, or modified in various ways without departing from the scope of this disclosure.

[0144] At 902, method 900 can include growing one or more first layers on a substrate in a first growth stage. The substrate can be, for example, a metal substrate, a semiconductor die, and / or other suitable substrates. The first layer can be grown by any suitable growth or regeneration process, such as, for example, metal-organic chemical vapor deposition (MOCVD). The first layer can include one or more waveguide layers, one or more spacer layers, an n-type doped III-V semiconductor (e.g., InP) layer, a multiple quantum well (MQW) layer, and a p-type doped III-V semiconductor (e.g., InP) layer. In some embodiments, the one or more waveguide layers can be formed of a III-V semiconductor material. For example, the III-V semiconductor material can be or can include one or more of indium phosphide (InP), gallium arsenide (GaAs), indium arsenide (InAs), gallium nitride (GaN), or indium antimonide (InSb).

[0145] One or more first layers can be associated with a first semiconductor stack. For example, a first layer can correspond to a layer of a first semiconductor stack (or a first plurality of semiconductor stacks) to be formed on a substrate. For example, one or more first layers can be at least a portion of a semiconductor stack that will eventually form a first semiconductor device (e.g., an amplifier, a phase modulator, etc.). Although at least some of the first layers can be associated with a first semiconductor stack (e.g., and / or not associated with other semiconductor stacks on the substrate), the first layer can be grown in a region on the substrate larger than the region corresponding to the first semiconductor stack. For example, in some embodiments, the first layer can be grown over the entire surface of the substrate.

[0146] At 904, method 900 can include etching a substrate to remove an etched portion of the first layer. The etched portion may not be associated with the first semiconductor stack. For example, a mask can be formed on a portion of the first layer associated with the first semiconductor stack such that the portion of the first layer associated with the first semiconductor stack remains after the etching process is completed. Some portions of the first layer common to the various semiconductor stacks (e.g., waveguide layers and / or spacer layers) may not be etched.

[0147] At 906, method 900 can include growing one or more second layers in the etched portion of the first layer on the substrate during a second growth stage. The one or more second layers can form a second semiconductor stack. During the second growth stage, one or more second layers are grown in the etched portion of the first layer. For example, in some embodiments, an n-type doped III-V semiconductor (e.g., InP) layer, a multiple quantum well (MQW) layer, and / or a p-type doped III-V semiconductor (e.g., InP) layer are etched away to a depth T and replaced with a second layer during the second growth stage. The second layer can include an n-type doped semiconductor layer. In some embodiments, after the second growth stage, a second etching process can be performed on a region of the first semiconductor stack such that no second layer exists in the first semiconductor stack after the second etching process.

[0148] In some embodiments, at 908, method 900 may further include growing one or more third layers on the substrate. The one or more third layers may be associated with both the first semiconductor stack and the second semiconductor stack. For example, one or more third layers may be grown on a portion of the first layer that is not etched in the etched portion and / or on a second layer formed in the etched portion. The third layer may include a p-type doped III-V semiconductor layer, an insulating layer, and / or other suitable layers.

[0149] In some embodiments, at 910, method 900 may include subjecting the substrate to one or more etch processes. For example, in some embodiments, method 900 may include etching a deep ridge in the substrate to isolate a first semiconductor stack from a second semiconductor stack. For example, the deep ridge may be etched to isolate the optical modes of the first semiconductor stack from the optical modes of the second semiconductor stack. In some embodiments, the method may include etching away a first etched region of the substrate in a first etch process. The first etched region may include at least a portion of one or more third layers, an n-type doped semiconductor layer, and a p-type doped III-V semiconductor layer. For example, the first etched region may be the largest region. The first etch process may etch away the top portion of layers formed on the substrate, such as a third layer. Additionally, in some embodiments, the method may include etching away a second etched region of the substrate in a second etch process. The second etched region may include at least a portion of an n-type doped semiconductor layer, a p-type doped III-V semiconductor layer, a multiple quantum well layer, and an n-type doped III-V semiconductor layer. For example, the second etched region may etch away some of the first and / or second layers. Additionally, in some embodiments, the method can include etching away a third etch region of the substrate in a third etch process to form a deep ridge etch in the substrate. The third etch region includes at least a portion of one or more waveguide layers and one or more spacer layers.

[0150] For example, a particular embodiment of the method for forming a photonic integrated circuit according to an exemplary aspect of this disclosure may include, in a first growth stage, growing one or more first layers on a substrate, the one or more first layers being associated with a first semiconductor stack, the one or more first layers including one or more waveguide layers, one or more spacer layers, an n-type doped III-V semiconductor layer, a multiple quantum well layer, and a p-type doped III-V semiconductor layer. The method may additionally include etching the substrate to remove etched portions of the first layers not associated with the first semiconductor stack, the etched portions of the first layers not associated with the first semiconductor stack including etched portions of the n-type doped III-V semiconductor layer, the multiple quantum well layer, and the p-type doped III-V semiconductor layer. The method may additionally include, in a second growth stage, growing one or more second layers on the substrate in the etched portions of the first layers to form a second semiconductor stack, the one or more second layers including at least an n-type doped semiconductor layer. The method may additionally include growing one or more third layers on the substrate, the one or more third layers being associated with both the first and second semiconductor stacks, the one or more third layers including a p-type doped III-V semiconductor layer and an insulating layer.

[0151] Additionally, in some embodiments, the method may include etching away a first etch region of the substrate in a first etch process, the first etch region including at least a portion of one or more third layers, an n-type doped semiconductor layer, and a p-type doped III-V semiconductor layer; etching away a second etch region of the substrate in a second etch process, the second etch region including at least a portion of an n-type doped semiconductor layer, a p-type doped III-V semiconductor layer, a multiple quantum well layer, and an n-type doped III-V semiconductor layer; and / or etching away a third etch region of the substrate in a third etch process to form a deep ridge etch in the substrate, the third etch region including at least a portion of one or more waveguide layers and one or more spacer layers.

[0152] The following description uses only LIDAR systems and autonomous vehicles as examples to illustrate the technologies involved in this disclosure. As stated herein, the technologies described are not limited to autonomous vehicles and can be implemented or implemented in other systems, autonomous platforms, and other computing systems.

Claims

1. A light detection and ranging (LIDAR) system for a vehicle, the LIDAR system comprising: A light source configured to output a light beam; Photonic integrated circuit (PIC), the photonic integrated circuit (PIC) comprising: A semiconductor die, including a substrate, having two or more semiconductor devices formed on the substrate, the two or more semiconductor devices being configured to receive and modify the light beam from the light source; and At least one photonic die, the at least one photonic die being coupled to the semiconductor die, the at least one photonic die including at least one emitter configured to receive the light beam from the semiconductor die; and One or more optical elements are configured to receive a light beam from the transmitter and direct the light beam toward an object in the vehicle environment.

2. The LIDAR system according to any claim (e.g., claim 1), wherein, The semiconductor die includes one or more channels, at least one of the one or more channels respectively including the one or more semiconductor devices, and wherein, The at least one photonic die includes one or more waveguides respectively coupled to the one or more channels.

3. The LIDAR system according to any claim (e.g., claim 2), wherein: The semiconductor die has a specific facet; and The input of at least a first channel and the output of at least a second channel of the one or more channels are located on the specific facet of the semiconductor die.

4. The LIDAR system according to any claim (e.g., claim 2), wherein, The at least one photonic die includes a power distribution network configured to receive the light beam and distribute the light beam to the one or more channels of the one or more semiconductor devices.

5. The LIDAR system according to any claim (e.g., claim 1), wherein, The at least one photonic die includes at least one silicon photonic die.

6. The LIDAR system according to any claim (e.g., claim 1), wherein, The semiconductor die includes a III-V group semiconductor die, and wherein, The one or more semiconductor devices include one or more III-V group semiconductor devices.

7. The LIDAR system according to any claim (e.g., claim 6), wherein, The III-V group semiconductor devices include indium phosphide devices, boron nitride devices, or gallium arsenide devices.

8. The LIDAR system according to any claim (e.g., claim 1), wherein, At least one of the two or more semiconductor devices includes a modulator configured to receive the light beam from the light source and modulate the light beam.

9. The LIDAR system according to any claim (e.g., claim 1), wherein, At least one of the two or more semiconductor devices includes an amplifier stage configured to receive the light beam from the light source and amplify the light beam.

10. The LIDAR system according to any claim (e.g., claim 9), wherein, The two or more semiconductor devices include a preamplifier stage configured to receive the light beam from the light source and amplify the light beam to a specific amplitude, and to provide the light beam of the specific amplitude to the amplifier stage.

11. The LIDAR system according to any claim (e.g., claim 1), wherein: Each semiconductor stack includes the two or more semiconductor devices on the substrate; and The individual semiconductor stacks of the one or more semiconductor devices are isolated.

12. The LIDAR system according to any claim (e.g., claim 1), wherein, The at least one photonic die also includes a receiver configured to receive a reflected light beam from the one or more optical elements, the reflected light beam being reflected from the object.

13. The LIDAR system according to any claim (e.g., claim 12), wherein, The at least one photonic die includes a transceiver die, wherein... The transmitter and the receiver are mounted on the transceiver die.

14. An autonomous vehicle control system, comprising: Photonic integrated circuit (PIC), the PIC comprising: A semiconductor die, including a substrate, having two or more semiconductor devices directly formed on the substrate, the two or more semiconductor devices being configured to receive a light beam from a light source and modify the light beam; and At least one photonic die is coupled to the semiconductor die, the at least one photonic die including at least one emitter configured to receive the light beam from the semiconductor die.

15. An autonomous vehicle, comprising: An autonomous vehicle control system, the autonomous vehicle control system including one or more processors; as well as A light detection and ranging (LIDAR) system, the LIDAR system comprising: A light source configured to output a light beam; Photonic integrated circuits (PICs) include: A semiconductor die, including a substrate, having two or more semiconductor devices formed on the substrate, the two or more semiconductor devices being configured to receive and modify the light beam from the light source; and At least one photonic die, said at least one photonic die being coupled to said semiconductor die, said at least one photonic die including at least one emitter being configured to receive said light beam from said semiconductor die; and One or more optical elements are configured to receive a light beam from the transmitter and direct the light beam toward an object in the environment of the autonomous vehicle.

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