A low-stress high-thermal-conductivity photovoltaic bypass conductive assembly, diode and preparation method

Abstract

This invention relates to the field of semiconductor technology, and more particularly to a low-stress, high-thermal-conductivity photovoltaic bypass diode and its fabrication method. It includes: a first lead with a receiving groove at one end; a chip mounting position within the receiving groove; a chip disposed in the chip mounting position of the receiving groove; a second lead, one end extending into the receiving groove and electrically connected to the chip, and the other end extending outward to form an external terminal; the first lead, the chip, and the second lead form a conductive connection structure. Specifically, the receiving groove has a circular cross-section; the chip is disposed at the bottom of the receiving groove. This metal packaging solution fundamentally solves the industry problem of temperature rise in photovoltaic bypass diodes. It reduces the junction temperature by approximately 19°C, significantly delaying device aging and extending module lifespan. It eliminates the risk of thermal runaway and improves the stability of power plants under extreme operating conditions. It provides a core thermal management solution for next-generation high-power-density photovoltaic modules.

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