High-temperature-resistant antistatic electronic device protective film formula and production process thereof
By designing a modified PET-PEEK blend substrate layer and a double-layer antistatic functional layer, the problems of aging, insufficient antistatic performance, and adhesive residue in electronic device protective films under high-temperature environments were solved, achieving high light transmittance and excellent mechanical properties.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- 江苏江泰高分子新材料有限公司
- Filing Date
- 2026-02-05
- Publication Date
- 2026-07-17
AI Technical Summary
Existing protective films for electronic devices are prone to aging and deformation under high temperature environments, have insufficient antistatic properties, and the adhesive is prone to peeling off. It is difficult to balance light transmittance and protective performance, and adhesive residue is easily left when they are removed.
A high-temperature resistant and antistatic protective film for electronic devices is formed by using a modified PET-PEEK blend substrate layer, a high-temperature resistant polyurethane-based pressure-sensitive adhesive layer, and a double-layer antistatic functional layer, combined with electron beam pre-crosslinking treatment and gradient curing process.
It achieves no aging or deformation under high temperature conditions, stable surface resistance, high light transmittance, no adhesive residue after removal, excellent tensile strength, and combines wear resistance, antistatic properties, and optical properties.
Smart Images
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