A method for removing boron trioxide from a furnace tube

By introducing oxygen into the furnace tube and raising the temperature, boron trioxide reacts with silicon wafers to generate silicon oxide. The high solid solubility of silicon oxide adsorbs boron atoms, solving the problem of boron trioxide accumulation in the furnace tube. This achieves low-cost removal, improves the production efficiency and yield of solar cells, and enables the reuse of waste silicon wafers.

CN122408480APending Publication Date: 2026-07-17TRINA SOLAR CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
TRINA SOLAR CO LTD
Filing Date
2025-01-16
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

In existing technologies, the accumulation of boron trioxide inside the furnace tube leads to a decrease in the production efficiency and yield of solar cells, and replacing the furnace tube is costly and cannot be removed in a timely and effective manner.

Method used

By introducing oxygen into the furnace tube and raising the temperature, boron trioxide reacts with the silicon wafer to generate silicon oxide and boron atoms. The high solid solubility of silicon oxide adsorbs boron atoms. By combining the monitoring of the sheet resistance of the silicon wafer or the reaction time, the conditions for stopping the impurity removal are determined, thus achieving low-cost removal of boron trioxide.

Benefits of technology

It can easily and efficiently remove boron trioxide from furnace tubes, reduce maintenance costs, extend equipment life, improve the production efficiency and yield of solar cells, and realize the reuse of waste silicon wafers.

✦ Generated by Eureka AI based on patent content.

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Abstract

The application relates to the technical field of solar cells, and particularly provides a method for removing boron trioxide in a furnace tube, which aims to remove the accumulated boron trioxide in the furnace tube at a low cost. The method comprises the following steps: placing a silicon wafer in the furnace tube, introducing oxygen into the furnace tube, and increasing the temperature to a preset temperature, so that the boron trioxide and the silicon wafer react, and after the gettering stopping condition is met, the furnace tube is cooled and the silicon wafer is taken out. According to the application, the boron trioxide in the furnace tube reacts with the silicon wafer at high temperature to obtain silicon oxide and boron atoms. Since the solid solubility of the boron atoms in the silicon oxide is higher than that in the silicon, the boron atoms can be adsorbed by the silicon oxide, so that the accumulated boron trioxide in the furnace tube is removed. The method is simple and convenient, the boron trioxide in the furnace tube can be adsorbed when the furnace tube is idle to avoid impurity accumulation, and a large amount of cost is not needed, so that the accumulated boron trioxide in the furnace tube is removed in time at a low cost.
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