Fluorine-containing low dielectric branched polyacrylate photoresist and method for preparing the same
By preparing fluorinated low-dielectric branched polyacrylate photoresists, the dielectric constant of the photoresist is reduced, the heat resistance and chemical stability of the photoresist are improved, and the mechanical properties and pattern resolution of the photoresist are enhanced through the free radical polymerization reaction of monomers such as fluorinated acetoxystyrene monomer.
CN122410892APending Publication Date: 2026-07-17SOUTHWEAT UNIV OF SCI & TECH +3
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SOUTHWEAT UNIV OF SCI & TECH
- Filing Date
- 2026-05-28
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
The high dielectric constant of existing photoresists limits the development of photolithography processes.
Method used
Fluorine-containing low-dielectric branched polyacrylate photoresist is used. The photoresist resin is formed through free radical polymerization of fluorinated acetoxystyrene monomer, hydrophilic monomer, acrylate monomer and betaine monomer, thereby reducing the polarizability and dielectric constant of the photoresist.
Benefits of technology
It improves the heat resistance, chemical stability and mechanical properties of photoresist, enhances the durability of photoresist in high temperature and corrosive environments, and ensures high resolution and flatness of photoresist patterns.
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Abstract
本申请公开了一种含氟低介电支化聚丙烯酸酯类光刻胶及其制备方法，所述含氟低介电支化聚丙烯酸酯类光刻胶包括光刻胶树脂，所述光刻胶树脂的结构通式用（Ⅰ）表示，其中，FASM表示氟化乙酰氧基苯乙烯单体，HM表示亲水性单体，AM表示丙烯酸酯单体，BM表示甜菜碱类单体。本申请通过丙烯酸酯单体、氟化乙酰氧基苯乙烯单体、亲水性单体和甜菜碱类单体这四个部分，共同使得光刻胶树脂具有极其优异的热学性能、力学性能、附着力、电学性能和成膜性能，极大地提高了光刻胶树脂以及含氟低介电支化聚丙烯酸酯类光刻胶的性能。
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