Method and system for self-optimization of inner layer etching parameters based on mes data
By using a self-optimization method for inner layer etching parameters based on MES data, the etching risk area is dynamically evaluated and the spray pressure is optimized, which solves the problems of uneven copper thickness and pattern density differences in PCB inner layer etching, and achieves precise control and adaptive protection of etching defects.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-06-04
- Publication Date
- 2026-07-17
AI Technical Summary
Existing PCB inner layer etching processes cannot effectively balance the uneven copper thickness and pattern density differences within the board surface. This results in etching parameter settings that cannot simultaneously protect fine lines from being broken by lateral etching and prevent copper layers from remaining in large copper areas, leading to etching defects.
The inner layer etching parameter self-optimization method based on MES data dynamically assesses etching risk areas by fusing real-time scanning of board surface copper thickness data with MES data, establishes a differentiated etching optimization model, and optimizes spray pressure parameters by combining feedforward main compensation and feedback micro-correction composite control.
It achieves precise and differentiated control over etching defect risks, protecting fine lines from being broken by lateral etching while ensuring clean etching of large copper areas, forming a complete closed loop from data acquisition to anomaly tracing.
Smart Images
Figure CN122411342A_ABST