Photocurable composition for forming interlayer dielectric, cured product, and semiconductor device

By using a low-dielectric photocurable composition, the problem of high dielectric constant of silicon dioxide interlayer dielectric in semiconductor devices is solved, thereby improving device stability and operating efficiency, while simplifying the fabrication process.

CN122444934APending Publication Date: 2026-07-24ZHEJIANG FORST NEW MATERIAL RES INST CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
ZHEJIANG FORST NEW MATERIAL RES INST CO LTD
Filing Date
2026-04-27
Publication Date
2026-07-24

AI Technical Summary

Technical Problem

The silicon dioxide interlayer dielectric used in existing semiconductor devices has a high dielectric constant, which affects the stability and efficiency of the devices.

Method used

A low-dielectric photocurable composition is used, comprising a matrix resin and a photoinitiator. The matrix resin consists of a main chain, fluorinated side chains, and carbon-carbon double bonds. It is prepared by free radical copolymerization and esterification reaction to form a cured product with a low dielectric constant as an interlayer dielectric.

Benefits of technology

It reduces the dielectric constant of semiconductor devices, improves device stability and efficiency, and simplifies the fabrication process.

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Abstract

The embodiment of the present application provides a photocuring composition for forming interlayer dielectric, which comprises a base resin and a photoinitiator; the base resin is composed of a main chain and a first side chain and a second side chain connected to the main chain respectively, the main chain is composed of carbon and hydrogen, the first side chain contains carbon-carbon double bond, and the second side chain contains fluorine atom; the photoinitiator is a free radical photoinitiator, and the free radical photoinitiator comprises at least one of triazine, phenylacetone, benzophenone or phosphorus initiator. The embodiment of the present application also provides a cured product and a semiconductor device. The embodiment of the present application introduces fluorine atom and carbon-carbon double bond into the side chain of the base resin, reduces the dielectric constant of the base resin and endows the base resin with photocuring performance. When the base resin is applied to the interlayer dielectric, the lower dielectric constant can improve the stability and working efficiency of the semiconductor device, and the photocuring performance can simplify the preparation process of the semiconductor device and improve the preparation efficiency of the semiconductor device.
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