Optical transceiver device
Patent Information
- Application Number
- CN202611265090.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-08-19
- Publication Date
- 2026-11-03
AI Technical Summary
Existing optical transceiver devices have high overall power consumption, making it difficult to effectively suppress the temperature rise of devices, which leads to wavelength drift and high-temperature failure.
The cold side substrate of the semiconductor cooler is divided into a first uncontrolled temperature cold side substrate, a second uncontrolled temperature cold side substrate, and a controlled temperature cold side substrate. Light emitting components, backlight detection components, and photoelectric detection components are respectively arranged on the cold side substrate to achieve zoned temperature control and reduce the cooling load.
It significantly reduces overall power consumption, improves the energy efficiency of semiconductor coolers, precisely controls temperature to suppress wavelength drift, and enhances assembly flatness and device stability.
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Figure CN123029669A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of optical communication technology, and in particular to an integrated optical transceiver device. Background Technology
[0002] Optical transceiver devices, such as lasers, are prone to temperature rise during operation. To suppress wavelength drift and prevent device failure due to high temperatures, the industry commonly uses thermoelectric coolers (TECs).
[0003] In related technologies, existing optical transceiver devices typically place the optical transmitting and receiving modules on the cold-side substrate of a thermoelectric cooler, relying on the cooling effect of the thermoelectric cooler to control the temperature of each component. However, the overall power consumption of the above solution is relatively high. Summary of the Invention
[0004] This invention provides an integrated optical transceiver device to solve the problem of high power consumption of the entire integrated optical transceiver device.
[0005] This invention discloses an integrated optical transceiver device, comprising a semiconductor cooler, at least one optical emitting component, at least one filtering element, a backlight detection component, a photoelectric detection component, an electrical signal processing component, and a pigtail component. Each filtering element is correspondingly arranged with each optical emitting component. The semiconductor cooler has a shared-heating substrate, a first uncontrolled-temperature cold substrate, a second uncontrolled-temperature cold substrate, and a controlled-temperature cold substrate. The first uncontrolled-temperature cold substrate, the second uncontrolled-temperature cold substrate, and the controlled-temperature cold substrate are separated from each other but share the shared-heating substrate. Each optical emitting component is disposed on the controlled-temperature cold substrate. The backlight detection component is disposed on the first uncontrolled-temperature cold substrate. The photoelectric detection component, the electrical signal processing component, and the filtering element are all disposed on the second uncontrolled-temperature cold substrate. The backlight detection component is used to monitor the power of the optical signals emitted by each optical emitting component.
[0006] The external optical signal is incident on each of the filtering elements through the pigtail assembly, and then reflected to the photodetector assembly. The photodetector assembly converts the optical signal into an electrical signal and transmits it to the electrical signal processing assembly for processing. The optical signals emitted by each optical emitting assembly are split by the corresponding filtering element and then reflected to the pigtail assembly for output.
[0007] Optionally, the temperature-controlled cold surface substrate includes at least one temperature-controlled cold surface sub-substrate, each of the temperature-controlled cold surface sub-substrates is separately disposed, and each of the light emitting components is disposed on each of the temperature-controlled cold surface sub-substrates in a corresponding manner.
[0008] Optionally, the backlight detection component includes a circuit driver chip and at least one backlight detector chip. The circuit driver chip is disposed on the first non-temperature-controlled cold surface substrate. Each backlight detector chip is disposed in correspondence with each light emitting component. The circuit driver chip is provided with at least one first electrical connection portion. Each backlight detector chip is disposed in correspondence with each first electrical connection portion. The backlight detector chip is packaged on the first electrical connection portion.
[0009] Optionally, the electrical connection portion includes a first mounting conductive pad and a wire bonding pad; the backlight detector chip is soldered onto the first mounting conductive pad and electrically connected to the wire bonding pad through metal leads, so that each of the backlight detector chips and the circuit driver chip forms an integrated co-package structure.
[0010] Optionally, the photoelectric detection component includes a chip carrier and at least one PD chip, each PD chip being disposed in a one-to-one correspondence with each of the filter elements, the chip carrier having at least one second electrical connection portion, each second electrical connection portion being disposed in a one-to-one correspondence with each of the PD chips, and the PD chip being packaged and disposed on the second electrical connection portion; the second non-temperature-controlled cold surface substrate having a third electrical connection portion, and the chip carrier being mounted on the third electrical connection portion.
[0011] Optionally, the second electrical connection portion includes a second mounting conductive pad and a gold-plated trace area, and the third electrical connection portion includes a third mounting conductive pad. The PD chip is soldered on the second mounting conductive pad and electrically connected to the chip carrier through the gold-plated trace area. The chip carrier is soldered on the third mounting conductive pad.
[0012] Optionally, the optical transceiver device further includes at least one thermistor, each thermistor being configured in a one-to-one correspondence with each temperature-controlled cold surface sub-sub ...
[0013] Optionally, each of the temperature-controlled cold-surface substrates is provided with a first conductive link, which is electrically connected to the thermistor. The second non-temperature-controlled cold-surface substrate is provided with a second conductive link electrically connected to the first conductive link, which is used to transmit the temperature monitoring signal of the thermistor.
[0014] Optionally, the electrical signal processing component includes a transimpedance amplifier chip, and a third conductive link is provided on the second uncontrolled temperature cold surface substrate. The transimpedance amplifier chip is disposed on the second uncontrolled temperature cold surface substrate and is electrically connected to the third conductive link. The third conductive link is used to transmit the electrical signal of the transimpedance amplifier chip.
[0015] Optionally, the pigtail assembly includes a first pigtail, a second pigtail, and a lens array. The light signals reflected by each of the filter elements are converged and coupled through the lens array and then transmitted to the first pigtail before being output. The external light signals are transmitted to the lens array through the second pigtail, and then coupled and converged by the lens array into a collimated beam before being transmitted to each of the filter elements.
[0016] The beneficial effects of the optical transceiver integrated device provided in this embodiment of the invention are as follows: This embodiment of the invention divides the cold surface substrate of the same semiconductor cooler into a first uncontrolled temperature cold surface substrate, a second uncontrolled temperature cold surface substrate, and a controlled temperature cold surface substrate. The first uncontrolled temperature cold surface substrate, the second uncontrolled temperature cold surface substrate, and the controlled temperature cold surface substrate are separately arranged but share the same common heating surface substrate. The temperature-sensitive light emitting component is set on the controlled temperature cold surface substrate, while the backlight detection component is arranged on the first uncontrolled temperature cold surface substrate, and the photoelectric detection component, the electrical signal processing component, and the filtering element are arranged on the second uncontrolled temperature cold surface substrate. This achieves zoned temperature control, which ensures accurate temperature control of the light emitting component to suppress wavelength drift, while significantly reducing the cooling load of the semiconductor cooler, reducing the overall power consumption, and improving the energy efficiency of the semiconductor cooler. Moreover, since all components are installed on the cold surface substrates of the same semiconductor cooler, they have good assembly flatness. Attached Figure Description
[0017] The technical solution of the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. In the accompanying drawings: Figure 1 This is one of the structural schematic diagrams of the optical transceiver integrated device according to an embodiment of the present invention; Figure 2 This is a schematic diagram of the internal structure of the optical transceiver integrated device according to an embodiment of the present invention; Figure 3 This is a schematic diagram of the structure of a semiconductor cooler according to an embodiment of the present invention; Figure 4 This is a schematic diagram of the backlight detection component according to an embodiment of the present invention; Figure 5 This is a schematic diagram of the structure of the photoelectric detection component according to an embodiment of the present invention; Figure 6 This is a second schematic diagram of the structure of the optical transceiver integrated device according to an embodiment of the present invention; Figure 7 This is a schematic diagram of the optical path of the optical transceiver integrated device according to an embodiment of the present invention.
[0018] The labels for the attached figures are as follows: 10. Semiconductor cooler; 11. Co-heated surface substrate; 12. First uncontrolled temperature-controlled cold surface substrate; 13. Second uncontrolled temperature-controlled cold surface substrate; 131. Third electrical connection; 132. Second conductive link; 133. Third conductive link; 14. Temperature-controlled cold surface substrate; 141. Temperature-controlled cold surface sub-substrate; 1411. First conductive link; 20. Light emitting component; 21. Laser chip; 22. First collimating lens; 30. Filtering element; 40. Backlight detection component; 41. Circuit driver chip; 411. First electrical connection; 42. Backlight detector chip; 50. Photoelectric detection component; 51. Chip carrier; 511. Second electrical connection; 52. PD chip; 53. Second collimating lens; 60. Electrical signal processing component; 61. Transimpedance amplifier chip; 70. Pigtail assembly; 71. First pigtail; 72. Second pigtail; 73. Lens array; 80. Thermistor; 90. Housing. Detailed Implementation
[0019] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. The preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings.
[0020] This invention provides an integrated optical transceiver device, such as... Figures 1 to 3 As shown, the optical transceiver includes a semiconductor cooler 10, at least one optical emitting component 20, at least one filter element 30, a backlight detection component 40, a photoelectric detection component 50, an electrical signal processing component 60, and a pigtail component 70. Each filter element 30 is arranged in a one-to-one correspondence with each optical emitting component 20. The semiconductor cooler 10 is provided with a common heating surface substrate 11, a first uncontrolled temperature cold surface substrate 12, a second uncontrolled temperature cold surface substrate 13, and a controlled temperature cold surface substrate 14. The first uncontrolled temperature cold surface substrate 12, the second uncontrolled temperature cold surface substrate 13, and the controlled temperature cold surface substrate 14 are separated from each other but share the common heating surface substrate 11. Each optical emitting component 20 is disposed on the controlled temperature cold surface substrate 14. The backlight detection component 40 is disposed on the first uncontrolled temperature cold surface substrate 12. The photoelectric detection component 50, the electrical signal processing component 60, and the filter element 30 are all disposed on the second uncontrolled temperature cold surface substrate 13. The backlight detection component 40 is used to monitor the power of the optical signals emitted by each optical emitting component 20.
[0021] The external optical signal is incident on each filter element 30 through the pigtail assembly 70, and then reflected to the photodetector assembly 50. The photodetector assembly 50 converts the optical signal into an electrical signal and transmits it to the electrical signal processing assembly 60 for processing. The optical signal emitted by each optical emitting assembly 20 is reflected to the pigtail assembly 70 after being split by the corresponding filter element 30.
[0022] This invention achieves zoned temperature control by dividing the cold-side substrate of a single thermoelectric cooler 10 into a first uncontrolled temperature-controlled cold-side substrate 12, a second uncontrolled temperature-controlled cold-side substrate 13, and a controlled temperature-controlled cold-side substrate 14. These substrates are separately configured but share the same common heating substrate 11. A temperature-sensitive light-emitting component 20 is placed on the controlled temperature-controlled cold-side substrate 14, while a backlight detection component 40 is placed on the first uncontrolled temperature-controlled cold-side substrate 12. A photoelectric detection component 50, an electrical signal processing component 60, and a filtering element 30 are placed on the second uncontrolled temperature-controlled cold-side substrate 13. This ensures precise temperature control of the light-emitting component 20 to suppress wavelength drift while significantly reducing the cooling load of the thermoelectric cooler 10, lowering overall power consumption, and improving the energy efficiency of the thermoelectric cooler 10. Furthermore, since all components are mounted on the same cold-side substrate of the same thermoelectric cooler 10, the assembly flatness is well-maintained.
[0023] The number of optical emitting components 20 can be one, two, three, or more, and the corresponding number of filter elements 30 can also be one, two, three, or more. When two or more optical emitting components 20 and filter elements 30 are set, a multi-channel optical transceiver is formed. Taking four optical emitting components 20 and four filter elements 30 as an example, the optical signals emitted by the four optical emitting components 20 are reflected by each filter element 30 and then coupled to the pigtail assembly 70 for output. External optical signals are input through the pigtail assembly 70 and transmitted to each filter element 30. Each filter element 30 selectively passes optical signals of a preset wavelength and reflects optical signals of different wavelengths to the photodetector assembly 50.
[0024] Optionally, the filter element 30 is a right-angled triangular prism. The first and second right-angled faces of the same prism are coated with the same optical filter film. This optical filter film allows total internal reflection of a preset wavelength of light signal, while allowing transmission of other wavelengths. Each filter element 30 is coated with an optical filter film of a different wavelength, thus achieving wavelength division multiplexing. Taking four optical emitting components 20 and four filter elements 30 as an example, the four optical emitting components 20 emit wavelengths of 1270nm, 1290nm, 1310nm, and 1330nm, respectively, while the optical filter films coated on the four filter elements 30 are 1265-1275nm, 1285-1295nm, 1305-1315nm, and 1325-1335nm, respectively. In this way, the optical transceiver unit achieves multiplexing of four transmitted signals and wavelength division of the received signals.
[0025] Furthermore, to reduce insertion loss in the optical path, an anti-reflection coating can be deposited on the long inclined surface of the right-angled triangular prism. In the optical path, the long inclined surface of the right-angled triangular prism serves as the incident / exit interface for the light beam. The optical signal emitted by the optical emitting component 20 enters the interior of the right-angled triangular prism through the long inclined surface. The optical signal of the preset wavelength is reflected by total internal reflection through the first right-angled surface and then directed towards the pigtail component 70. The external optical signal is incident through the pigtail component 70, enters the right-angled triangular prism through the long inclined surface, and is reflected by total internal reflection through the second right-angled surface and then directed towards the photodetector component 50. The anti-reflection coating on the long inclined surface can significantly reduce Fresnel reflection loss at the incident / exit interface, reduce insertion loss in the optical path, and improve the multiplexing efficiency at the transmitting end and the splitting efficiency at the receiving end.
[0026] Furthermore, the right-angled triangular prism is equipped with markings to indicate the installation direction.
[0027] like Figure 2 and Figure 3 As shown, in an optional embodiment of this application, the temperature-controlled cold surface substrate 14 includes at least one temperature-controlled cold surface sub-substrate 141, each temperature-controlled cold surface sub-substrate 141 is separately disposed, and each light emitting component 20 is disposed on each temperature-controlled cold surface sub-substrate 141 in a corresponding manner.
[0028] By dividing the temperature-controlled cold-surface substrate 14 into multiple separate temperature-controlled cold-surface sub-sub ...
[0029] In actual assembly and application scenarios, the number of temperature-controlled cold surface substrates 141 can be flexibly adapted according to the number of optical channels of the optical transceiver device. When the device is a multi-channel optical transceiver device, multiple independent temperature-controlled cold surface substrates 141 can be set up to realize independent zone temperature control of the multi-channel optical emitting component 20. When it is a single-channel structure, a single temperature-controlled cold surface substrate 141 can be used to simplify the structure.
[0030] like Figures 2 to 4As shown, in an optional embodiment of this application, the backlight detection component 40 includes a circuit driver chip 41 and at least one backlight detector chip 42. The circuit driver chip 41 is disposed on the first non-temperature-controlled cold surface substrate 12. Each backlight detector chip 42 is disposed in a one-to-one correspondence with each light emitting component 20. The circuit driver chip 41 is provided with at least one first electrical connection portion 411. Each backlight detector chip 42 is disposed in a one-to-one correspondence with each first electrical connection portion 411. The backlight detector chip 42 is packaged on the first electrical connection portion 411.
[0031] In this embodiment, the backlight detection component 40 is configured with a circuit driver chip 41 paired with a backlight detector chip 42 that is matched one-to-one with the light emitting component 20. The backlight detector chip 42 is directly packaged on the first electrical connection portion 411 of the circuit driver chip 41, which is mounted on the first non-temperature-controlled cold-surface substrate 12. This achieves an integrated packaging structure for the backlight detection component 40, enabling localized CPO (Co-Packaged Optics) packaging applications. Compared to traditional discrete mounting structures, this structure significantly shortens the electrical signal transmission distance between the backlight detector chip 42 and the circuit driver chip 41, effectively reducing signal loss, delay, and interference during transmission, improving the transmission accuracy and response speed of the optical power monitoring signal, and reducing power consumption and signal delay in high-speed computing networks. The highly integrated packaging also helps save considerable space for optical communication interaction.
[0032] In an optional embodiment of this application, the first electrical connection portion 411 includes a first mounting conductive pad and a wire bonding pad; the backlight detector chip 42 is soldered onto the first mounting conductive pad and electrically connected to the wire bonding pad through metal leads, so that each backlight detector chip 42 and the circuit driver chip 41 form an integrated co-package structure.
[0033] Specifically, the first mounting conductive pad provides stable physical mounting support and basic conductive connection for the backlight detector chip 42, ensuring the robustness of the backlight detector chip 42 installation and preventing chip misalignment or detachment during long-term operation. The wire bonding pad, together with the metal leads, enables precise electrical conduction between the backlight detector chip 42 and the circuit driver chip 41. This connection method is technologically mature and has strong conduction stability. Compared with traditional plug-in and external wire connection methods, this packaging structure not only improves the degree of integration but also allows for more precise management of the backlight detector chip 42's surface mount position, enabling better reception of laser light emitted from the rear waveguide port of the light emitting component 20 for backlight monitoring.
[0034] Optionally, since the backlight detector chip 42 has a wide operating wavelength range, such as 1200-1500nm, a conventional backlight detector chip 42 can be selected.
[0035] In summary, the above-mentioned combined conductive structure using the first mounting conductive pad and the wire bonding pad achieves integrated co-packaging of the backlight detector chip 42 and the circuit driver chip 41, resulting in high integration and a compact structure, further reducing the overall size of the backlight detection component 40 and meeting the miniaturization development needs of devices.
[0036] like Figure 2 , Figure 3 and Figure 5 As shown, in an optional embodiment of this application, the photoelectric detection component 50 includes a chip carrier 51 and at least one PD chip 52. Each PD chip 52 is disposed in a one-to-one correspondence with each filter element 30. The chip carrier 51 is provided with at least one second electrical connection portion 511, and each second electrical connection portion 511 is disposed in a one-to-one correspondence with each PD chip 52. The PD chip 52 is packaged on the second electrical connection portion 511. The second non-temperature-controlled cold surface substrate 13 is provided with a third electrical connection portion 131, and the chip carrier 51 is mounted on the third electrical connection portion 131.
[0037] Specifically, the PD chip 52, as the core device for photoelectric conversion of optical signals, can accurately receive external optical signals reflected by each filter element 30 through a one-to-one matching filter element 30, realizing independent photoelectric conversion of a single optical signal, avoiding crosstalk interference between multiple signals, and significantly improving the accuracy of optical signal detection. Meanwhile, the layered carrier structure of the chip carrier 51 enables standardized integrated packaging of the PD chip 52. Compared to directly soldering the PD chip 52 onto the second uncontrolled temperature-controlled cold-surface substrate 13, this effectively avoids damage to the PD chip 52 caused by substrate soldering temperature differences and substrate deformation, protecting the core PD chip 52. The second electrical connection part 511 ensures stable conduction between the PD chip 52 and the chip carrier 51, and the third electrical connection part 131 enables circuit conduction between the overall photoelectric detection component 50 and the second uncontrolled temperature-controlled cold-surface substrate 13. The overall structure is stably connected, effectively improving the stability of photoelectric signal conversion and transmission, and ensuring the signal processing accuracy of the subsequent electrical signal processing component 60.
[0038] Optionally, since the conventional PD chip 52 has a wide operating wavelength (receiving wavelength) range, such as 1200-1500nm, the conventional PD chip 52 can be selected.
[0039] In an optional embodiment of this application, the second electrical connection portion 511 includes a second mounting conductive pad and a gold-plated trace area, the third electrical connection portion 131 includes a third mounting conductive pad, the PD chip 52 is soldered on the second mounting conductive pad and electrically connected to the chip carrier 51 through the gold-plated trace area, and the chip carrier 51 is soldered on the third mounting conductive pad.
[0040] The PD chip 52 is precisely mounted and electrically connected via a second conductive pad, while the gold-plated trace area enables efficient signal transmission. The gold-plated trace possesses excellent oxidation resistance, corrosion resistance, and conductivity, maintaining stable conductivity over a long period. This avoids signal attenuation and open circuits caused by trace oxidation and corrosion during long-term use, significantly improving the stability and lifespan of photoelectric signal transmission. Simultaneously, the chip carrier 51 is soldered and electrically connected to the second uncontrolled temperature-controlled cold-surface substrate 13 via a third conductive pad. The use of the second conductive pad and gold-plated trace area for electrical connection between the PD chip 52 and the chip carrier 51, and the third conductive pad for fixing and electrically connecting the chip carrier 51 to the second uncontrolled temperature-controlled cold-surface substrate 13, results in a short signal transmission path and low loss. This allows for precise and rapid transmission of the electrical signal converted by the PD chip 52 to the back-end circuitry, effectively improving the response speed and accuracy of the device's optical signal detection and processing, and ensuring the overall performance of the optical transceiver.
[0041] During assembly, each PD chip 52 is first mounted on the second mounting conductive pad of the chip carrier 51; then the chip carrier 51 is mounted on the third mounting conductive pad of the second uncontrolled temperature cold surface substrate 13; then the pads on the chip carrier 51 are soldered to the corresponding pads on the second uncontrolled temperature cold surface substrate 13 to complete positioning, soldering fixation and electrical connection, realizing the integrated packaging structure of the photoelectric detection component 50 and realizing local CPO (Co-Packaged Optics) packaging application; finally, the optical path coupling and assembly of the receiver are performed.
[0042] In an optional embodiment of this application, the photoelectric detection component 50 further includes a second collimating lens 53. After the external light signal is incident on the filter element 30 via the pigtail assembly 70 and split, it is reflected to the second collimating lens 53 for shaping, and then converged and coupled to the photoelectric detection component 50.
[0043] The large divergence angle of the output beam from the fiber optic assembly 70 can easily lead to beam shift and low light energy utilization when directly incident on the PD chip 52. By adding a second collimating lens 53 to receive the split external light signal, the second collimating lens 53 can converge and shape the diverging beam into a parallel collimated beam, which is then coupled to the photosensitive area of the PD chip 52, greatly improving the optical coupling efficiency and reducing optical path loss.
[0044] like Figure 2 As shown, in an optional embodiment of this application, the optical transceiver device further includes at least one thermistor 80, each thermistor 80 being configured in a one-to-one correspondence with each temperature-controlled cold surface sub-substrate 141, and the thermistor 80 being used to monitor the temperature of the corresponding temperature-controlled cold surface sub-substrate 141.
[0045] In this embodiment, a thermistor 80 is configured one-to-one on each temperature-controlled cold surface sub-sub-substrate 141. The thermistor 80 can collect the operating temperature data of the corresponding temperature-controlled cold surface sub-substrate 141 in real time, accurately reflecting the operating ambient temperature of each optical emitting component 20. Real-time and accurate temperature monitoring can provide precise data support for the temperature control and adjustment of the semiconductor cooler 10, realizing real-time and accurate temperature monitoring of each independent temperature-controlled cold surface sub-substrate 141. When an abnormally high temperature occurs in a certain temperature-controlled cold surface sub-substrate 141, the thermistor 80 can quickly feed back an abnormal signal, which facilitates timely warning and protection by the downstream control system, avoiding high-temperature damage to the corresponding optical emitting component 20, and greatly improving the working safety and stability of the optical transceiver device.
[0046] Optionally, the thermistors 80 provided on each temperature-controlled cold surface substrate 141 can be the same type of thermistor 80.
[0047] like Figure 2 and Figure 3 As shown, in an optional embodiment of this application, each temperature-controlled cold surface substrate 141 is provided with a first conductive link 1411, which is electrically connected to the thermistor 80. The second non-temperature-controlled cold surface substrate 13 is provided with a second conductive link 132, which is electrically connected to the first conductive link 1411. The second conductive link 132 is used to transmit the temperature monitoring signal of the thermistor 80.
[0048] By setting a first conductive link 1411 on the temperature-controlled cold surface sub-substrate 141 and a second conductive link 132 electrically connected to the first conductive link 1411 on the second non-temperature-controlled cold surface sub-substrate 13, the temperature monitoring signal of the thermistor 80 is extracted across regions. The first conductive link 1411 extracts the temperature monitoring signal sensed by the thermistor 80 from the temperature-controlled cold surface sub-substrate 141, while the second conductive link 132 further transmits the temperature monitoring signal to the subsequent control system. This cross-region conductive link design makes full use of the wiring space on the surface of the second non-temperature-controlled cold surface sub-substrate 13 of the semiconductor cooler 10, simplifies the internal wiring layout of the device, and improves integration and reliability.
[0049] In one embodiment, the first conductive link 1411 and the second conductive link 132 can be formed by printing or electroplating metal traces on the surface of the second uncontrolled temperature-controlled cold surface substrate 13. The cross-regional electrical connection between the first conductive link 1411 and the second conductive link 132 can be achieved by providing a common electrode, pad mating, or gold wire bridging at the junction of adjacent cold surface substrates.
[0050] like Figure 2 and Figure 3As shown, in an optional embodiment of this application, the electrical signal processing component 60 includes a transimpedance amplifier chip 61, and a third conductive link 133 is provided on the second uncontrolled temperature cold surface substrate 13. The transimpedance amplifier chip 61 is disposed on the second uncontrolled temperature cold surface substrate 13 and is electrically connected to the third conductive link 133. The third conductive link 133 is used to transmit electrical signals of the transimpedance amplifier chip 61.
[0051] Specifically, the transimpedance amplifier chip 61 converts the weak photocurrent signal generated by the PD chip 52 in the photodetector component 50 into a voltage signal and amplifies it with low noise, significantly improving the signal-to-noise ratio and sensitivity of the receiver. The transimpedance amplifier chip 61 is mounted on the second non-temperature-controlled cold-surface substrate 13 and electrically connected to the third conductive link 133. The electrical signal of the transimpedance amplifier chip 61 can be transmitted to the subsequent control system through the third conductive link 133. The third conductive link 133 provides a stable power supply and signal transmission path for the transimpedance amplifier chip 61, with high line integration and stable transmission, effectively reducing delay and loss during signal processing and ensuring the real-time performance and accuracy of signal processing in the optical transceiver device.
[0052] like Figure 1 and Figure 2 As shown, in an optional embodiment of this application, each optical emitting component 20 includes a laser chip 21 and a first collimating lens 22. The optical signal emitted from the forward waveguide port of each laser chip 21 is shaped by the corresponding first collimating lens 22 to form a collimated laser beam, which is then transmitted to the filter element 30. The optical signal emitted from the backward waveguide port of each laser chip 21 is transmitted to the backlight detection component 40.
[0053] The laser chip 21, combined with the first collimating lens 22, enables precise emission and shaping of optical signals. The original laser beam emitted from the forward waveguide port of the laser chip 21 suffers from large divergence and unfocused optical path. After being shaped by the first collimating lens 22, a highly parallel and focused collimated laser beam is formed, effectively reducing optical loss during signal transmission, improving transmission efficiency and stability, and ensuring the quality of subsequent filtering, beam splitting, and fiber optic output. Simultaneously, the backlight signal emitted from the backward waveguide port of the laser chip 21 is transmitted to the backlight detection component 40, enabling real-time monitoring of optical emission power. This simplifies the optical path structure and reduces device cost and assembly complexity. This forward and backward optical path separation design ensures high-quality transmission of forward optical communication signals while achieving precise monitoring of reverse optical power. The bidirectional optical paths do not interfere with each other, perfectly meeting the dual functional requirements of optical emission and backlight monitoring in the device.
[0054] In optional embodiments of this application, such as Figure 1 , Figure 6 and Figure 7The pigtail assembly 70 includes a first pigtail 71, a second pigtail 72, and a lens array 73. The light signals reflected by each filter element 30 are converged and coupled through the lens array 73 and then output to the first pigtail 71. The external light signals are transmitted to the lens array 73 through the second pigtail 72, and then coupled and converged into a collimated beam by the lens array 73 before being transmitted to each filter element 30.
[0055] Specifically, the lens array 73 can simultaneously match multiple optical paths, uniformly completing the coupling of the emitted beam and the collimation and focusing of the incident beam. This eliminates the need for a separate lens for each optical path, simplifying the optical components of the pigtail assembly 70 and reducing the overall space required. At the transmitting end, the multiple laser beams split from the filter element 30 are converged and focused by the lens array 73, precisely coupling them into the first pigtail 71, reducing optical power loss due to beam divergence and improving optical output efficiency. At the receiving end, the divergent light input from the second pigtail 72 is shaped into a regular parallel beam by the lens array 73 and uniformly projected onto the corresponding filter element 30, achieving wavelength division multiplexing. The integrated lens array 73 integrates multiple optical paths, combining transmission and reception, simplifying assembly processes and saving on the number of optical fibers.
[0056] Optionally, the lens array 73 integrates two lenses, which correspond to the first pigtail 71 and the second pigtail 72, respectively.
[0057] like Figure 1 and Figure 6 As shown, in an optional embodiment of this application, the optical transceiver further includes a housing 90, within which each optical emitting component 20, each filtering element 30, backlight detection component 40, photoelectric detection component 50, and electrical signal processing component 60 are sealed. This arrangement increases the stability and reliability of the optical transceiver during long-term operation.
[0058] like Figure 1 and Figure 7 As shown, the optical signal path of the optical transceiver device according to an embodiment of the present invention will be described in detail below: At the transmitting end, the rearward waveguide port of the laser chip 21 in each optical emitting component 20 emits a back-diverging laser beam, which is directly received by the backlight detector chip 42 of the rear backlight detection component 40; the forward waveguide port of each laser chip 21 outputs the emitted laser beam, which is collimated by the first collimating lens 22 and reaches the right-angled surface of the corresponding filter element 30 to form total internal reflection, and then is transmitted to the lens array 73 of the pigtail assembly 70 for collimation. The collimated beam is coupled and focused into the first pigtail 71 of the pigtail assembly 70.
[0059] At the receiving end, the divergent beam output from the second pigtail 72 in the pigtail assembly 70 is collimated into a collimated beam by the lens array 73. Light of different wavelengths is successively reflected by the other right-angle surface of each filter element 30, and then coupled and converged to the PD chip 52 of the photodetector assembly 50 through the corresponding second collimating lens 53.
[0060] It should be understood that the above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit them. Those skilled in the art can modify the technical solutions described in the above embodiments, or make equivalent substitutions for some of the technical features; and all such modifications and substitutions should fall within the protection scope of the appended claims of the present invention.
Claims
1. An integrated optical transceiver device, characterized in that, The device includes a semiconductor cooler, at least one light emitting component, at least one filter element, a backlight detection component, a photoelectric detection component, an electrical signal processing component, and a pigtail component. Each filter element is correspondingly arranged with each light emitting component. The semiconductor cooler has a common heating surface substrate, a first uncontrolled temperature cold surface substrate, a second uncontrolled temperature cold surface substrate, and a controlled temperature cold surface substrate. The first uncontrolled temperature cold surface substrate, the second uncontrolled temperature cold surface substrate, and the controlled temperature cold surface substrate are separated from each other but share the common heating surface substrate. Each light emitting component is disposed on the controlled temperature cold surface substrate. The backlight detection component is disposed on the first uncontrolled temperature cold surface substrate. The photoelectric detection component, the electrical signal processing component, and the filter element are all disposed on the second uncontrolled temperature cold surface substrate. The backlight detection component is used to monitor the power of the light signals emitted by each light emitting component. The external optical signal is incident on each of the filtering elements through the pigtail assembly, and then reflected to the photodetector assembly. The photodetector assembly converts the optical signal into an electrical signal and transmits it to the electrical signal processing assembly for processing. The optical signals emitted by each optical emitting assembly are split by the corresponding filtering element and then reflected to the pigtail assembly for output.
2. The optical transceiver device according to claim 1, characterized in that, The temperature-controlled cold surface substrate includes at least one temperature-controlled cold surface sub-substrate, each of the temperature-controlled cold surface sub-substrates is separately disposed, and each of the light emitting components is disposed on each of the temperature-controlled cold surface sub-substrates in a corresponding manner.
3. The optical transceiver device according to claim 1, characterized in that, The backlight detection component includes a circuit driver chip and at least one backlight detector chip. The circuit driver chip is disposed on the first non-temperature-controlled cold surface substrate. Each backlight detector chip is disposed in a one-to-one correspondence with each light emitting component. The circuit driver chip is provided with at least one first electrical connection portion. Each backlight detector chip is disposed in a one-to-one correspondence with each first electrical connection portion. The backlight detector chip is packaged and disposed on the first electrical connection portion.
4. The optical transceiver device according to claim 3, characterized in that, The electrical connection portion includes a first mounting conductive pad and a wire bonding pad; the backlight detector chip is soldered onto the first mounting conductive pad and electrically connected to the wire bonding pad through metal leads, so that each of the backlight detector chips and the circuit driver chip forms an integrated co-package structure.
5. The optical transceiver device according to claim 1, characterized in that, The photoelectric detection component includes a chip carrier and at least one PD chip. Each PD chip is arranged in a one-to-one correspondence with each of the filter elements. The chip carrier is provided with at least one second electrical connection portion, and each second electrical connection portion is arranged in a one-to-one correspondence with each of the PD chips. The PD chip is packaged on the second electrical connection portion. The second non-temperature-controlled cold surface substrate is provided with a third electrical connection portion, and the chip carrier is attached to the third electrical connection portion.
6. The optical transceiver device according to claim 5, characterized in that, The second electrical connection portion includes a second mounting conductive pad and a gold-plated trace area. The third electrical connection portion includes a third mounting conductive pad. The PD chip is soldered onto the second mounting conductive pad and electrically connected to the chip carrier through the gold-plated trace area. The chip carrier is soldered onto the third mounting conductive pad.
7. The optical transceiver device according to claim 2, characterized in that, The optical transceiver also includes at least one thermistor, each thermistor being configured in a one-to-one correspondence with each temperature-controlled cold surface substrate, and the thermistor being used to monitor the temperature of the corresponding temperature-controlled cold surface substrate.
8. The optical transceiver device according to claim 7, characterized in that, Each of the temperature-controlled cold-surface substrates is provided with a first conductive link, which is electrically connected to the thermistor. The second non-temperature-controlled cold-surface substrate is provided with a second conductive link, which is electrically connected to the first conductive link. The second conductive link is used to transmit the temperature monitoring signal of the thermistor.
9. The optical transceiver device according to any one of claims 1-8, characterized in that, The electrical signal processing component includes a transimpedance amplifier chip. A third conductive link is provided on the second uncontrolled temperature cold surface substrate. The transimpedance amplifier chip is disposed on the second uncontrolled temperature cold surface substrate and is electrically connected to the third conductive link. The third conductive link is used to transmit the electrical signals of the transimpedance amplifier chip.
10. The optical transceiver device according to any one of claims 1-8, characterized in that, The fiber optic assembly includes a first fiber optic cable, a second fiber optic cable, and a lens array. The light signals reflected by each of the filter elements are converged and coupled through the lens array and then transmitted to the first fiber optic cable before being output. The external light signals are transmitted to the lens array via the second fiber optic cable, and then coupled and converged by the lens array into a collimated beam before being transmitted to each of the filter elements.
