Display device

Abstract

Disclosed is a display apparatus including: a first light emitting device, a second light emitting device, and a third light emitting device on a substrate; an encapsulation layer covering the first to third light emitting devices; a touch electrode disposed on the encapsulation layer and having a first opening, a second opening, and a third opening, the first opening, the second opening, and the third opening overlapping the first light emitting device, the second light emitting device, and the third light emitting device, respectively; a touch insulating layer on the encapsulation layer; a color filter layer or a reflection adjustment layer disposed on the touch insulating layer and further disposed in a second opening of the touch electrode overlapping the second light emitting device; and a planarization layer. The planarization layer may directly contact an upper surface of the touch insulating layer through the first opening and the third opening. The color filter layer or the reflection adjustment layer may reduce a difference between front light and side light emitted from pixels of the display device.

Description

[0001] This application is based on and claims the benefit of priority from Korean Patent Application No. 10-2023-0105630 filed in the Korean Intellectual Property Office on August 11, 2023, the disclosure of which is incorporated herein in its entirety by reference. Technical Field

[0002] One or more embodiments relate to a device, and in particular, a display device. Background Art

[0003] The display device displays data visually. Such a display device may include a substrate divided into a display area and a non-display area. A plurality of pixels may be included in the display area. In addition, a thin film transistor corresponding to each of the plurality of pixels and a sub-pixel electrode electrically connected to the thin film transistor may be provided in the display area. In addition, a light-emitting layer may be provided in the display area to correspond to the sub-pixel electrode. In addition, a counter electrode may be provided in the display area and provided together in each of the pixels. Various wirings, a driving unit, a control unit, etc. may be provided in the non-display area to transmit electrical signals to the display area. Utility Model Content

[0004] The sub-pixel electrodes or counter electrodes in the pixels of the display device may be reflective and positioned so that the constructive interference of the light emitted from the light-emitting layer increases the brightness of the front light. Constructive interference may result in a brightness difference between the front light traveling perpendicular to the surface of the display device (or the upper surface of the light-emitting device) and the side light traveling at an inclined angle (e.g., 45 degrees). In addition, there may be a difference between the wavelength range or brightness distribution of the front light and the side light, so that the colors of the front light and the side light may be seen differently depending on the position of the observer. For example, the peak wavelength of the side light may be shorter than the peak wavelength of the front light, so that an observer in a position to see the front light can identify one color (e.g., light green), and an observer in a position to see the side light can identify a different color (e.g., cyan). A color filter layer or a reflection adjustment layer as disclosed herein can reduce the difference between the front light and the side light emitted from the pixels of the display device.

[0005] Additional aspects will be set forth in part in the description which follows and, in part, will be apparent from the description, or may be learned by practice of the presented disclosed embodiments.

[0006] The utility model aims to provide a display device with reduced brightness difference between front light and side light.

[0007] According to one aspect of the disclosure, a display device includes: a first light-emitting device, a second light-emitting device and a third light-emitting device, wherein the first light-emitting device, the second light-emitting device and the third light-emitting device are arranged on a substrate; an encapsulation layer, covering the first light-emitting device, the second light-emitting device and the third light-emitting device; a touch electrode, which is arranged on the encapsulation layer and has a first opening, a second opening and a third opening respectively overlapping with the first light-emitting device, the second light-emitting device and the third light-emitting device; a touch insulating layer, which is between the encapsulation layer and the touch electrode; a color filter layer, which is arranged on the touch insulating layer and is also arranged in the second opening of the touch electrode overlapping with the second light-emitting device; and a planarization layer, which is arranged on the color filter layer, wherein the planarization layer is in direct contact with the upper surface of the touch insulating layer through the first opening and the third opening of the touch electrode.

[0008] The touch electrode may include a first conductive line and a second conductive line, and the second opening is between the first conductive line and the second conductive line.

[0009] The color filter layer may be between the first conductive line and the second conductive line of the touch electrode.

[0010] The width of the color filter layer may be smaller than the width of the second opening.

[0011] The color filter layer may cover upper surfaces of the first and second conductive lines of the touch electrode.

[0012] One side surface of the color filter layer and one side surface of the first conductive line of the touch electrode may be on the same plane.

[0013] The color filter layer may include a material having a maximum transmittance within a wavelength range of about 520 nm to about 530 nm.

[0014] The maximum transmittance of the material of the color filter layer may be 90% or more.

[0015] The material of the color filter layer may have a full width at half maximum (FWHM) of 100 nm or less.

[0016] The brightness of the display device measured in a direction inclined at 45 degrees to the upper surface of the substrate may be 60% or more of the brightness of the display device measured in a direction perpendicular to the upper surface of the substrate at 90 degrees.

[0017] The planarization layer may include a plurality of layers including different materials.

[0018] According to another aspect of the disclosure, a display device includes: first to third light emitting devices, which are arranged on a substrate; an encapsulation layer, covering the first to third light emitting devices; a touch electrode, which is disposed on the encapsulation layer and has a first opening, a second opening and a third opening, which are respectively overlapped with the first light emitting device, the second light emitting device and the third light emitting device; a touch insulating layer, which is on the encapsulation layer; a reflection adjustment layer, which is disposed on the touch electrode and includes a material that absorbs light in a wavelength range of 580nm to 600nm; and a planarization layer, which covers the reflection adjustment layer.

[0019] The reflection adjustment layer may be disposed in the second opening of the touch electrode.

[0020] The planarization layer may directly contact the touch insulation layer through the first opening and the third opening of the touch electrode.

[0021] The touch electrode may include a conductive line surrounding the second opening, and the reflection adjustment layer may overlap an upper surface of the conductive line of the touch electrode.

[0022] The width of the reflection adjustment layer may be smaller than the width of the second opening of the touch electrode.

[0023] The reflection adjustment layer may extend to overlap the first opening, the second opening, and the third opening of the touch electrode.

[0024] The reflection adjustment layer may include a material having a transmittance of 0.5 or less in a wavelength range of about 585 nm to about 595 nm.

[0025] The brightness of the display device measured in a direction inclined at 45 degrees to the upper surface of the substrate may be 60% or more of the brightness of the display device measured in a direction perpendicular to the upper surface of the substrate at 90 degrees.

[0026] The planarization layer may include a plurality of layers including different materials.

[0027] According to an embodiment, a display device can be provided in which the brightness ratio of the side light relative to the front light is increased (i.e., the brightness difference between the front light and the side light is reduced). In addition, the display device can reduce the wavelength difference between the front light and the side light, so that the color difference between the front light and the side light is reduced, and the position of the observer has less influence on the color of the image seen. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The above and other aspects, features and advantages of certain disclosed embodiments will become more apparent from the following description taken in conjunction with the accompanying drawings.

[0029] Figure 1 is a plan view schematically showing a display device according to an embodiment.

[0030] Figure 2 It is along Figure 1 A cross-sectional view of the display device taken along line II-II'.

[0031] Figure 3 is a plan view showing a part of a display device according to an embodiment.

[0032] Figure 4 It is shown Figure 3 An enlarged plan view of region IV of the display device shown in FIG.

[0033] Figure 5 It is along Figure 4 A cross-sectional view of the display device taken along line V-V'.

[0034] Figure 6 It is shown Figure 4 An enlarged plan view of area VI of the display device shown in FIG.

[0035] Figure 7 , Figure 8 , Fig. 9 , Fig.10 and Fig.11 According to various embodiments, Figure 6 A cross-sectional view of the display device taken along line AA'.

[0036] Fig.12 is a graph showing brightness distribution according to the wavelength of front light and side light.

[0037] Fig.13 is a graph showing luminance distribution of front light according to wavelength before and after applying a color filter layer according to an embodiment.

[0038] Fig.14 is a graph showing transmittance distribution of front light according to wavelength when a color filter layer according to an embodiment is used.

[0039] Fig.15 is a graph showing brightness distribution of front light according to wavelength before and after applying the reflection adjustment layer according to various embodiments.

[0040] Fig.16 is a graph showing transmittance distribution of front light according to wavelength when the reflection adjustment layer according to various embodiments is used. DETAILED DESCRIPTION

[0041] Reference will now be made in detail to embodiments, examples of which are shown in the accompanying drawings, wherein like reference numerals represent like elements throughout. In this regard, the embodiments presented may have different forms and should not be construed as being limited to the descriptions set forth herein. Therefore, embodiments are described below only by reference to the accompanying drawings to explain aspects of this specification.

[0042] Since various modifications and various embodiments of the present disclosure are possible, only some specific embodiments are shown in the drawings and only some specific embodiments are described in detail in the specific embodiments. The effects and features of the present disclosure and the methods for realizing them will be apparent with reference to the embodiments described in detail below in conjunction with the drawings. However, the present disclosure is not limited to the embodiments disclosed herein, but can be implemented in various forms.

[0043] Hereinafter, the terms “first”, “second”, etc. are used for the purpose of distinguishing one element from other elements, and not in a limiting sense.

[0044] Hereinafter, a singular or plural expression includes the case of the singular or plural item unless the context clearly indicates otherwise.

[0045] In the following, terms such as “comprises” or “has” are intended to identify the features or elements mentioned, and do not exclude the possible presence of one or more other features or elements, unless the exclusion is explicitly stated.

[0046] Hereinafter, that a part such as a layer, a region, an element, etc. is located on another part includes not only a case where the part is directly located on the other part but also a case where other elements are interposed between the part and the other part.

[0047] In the drawings, the size of the elements may be exaggerated or reduced. For example, the size and thickness of each component in the drawings may be shown for the convenience of explanation or illustration, and the present disclosure is not necessarily limited to the illustration.

[0048] In this specification, when the order of some embodiments of a specific process may be described, the specific process order may be performed differently from the described order. For example, two processes described in succession may be performed substantially simultaneously or in the reverse order of the described order.

[0049] In this specification, "A and / or B" is A, B, or A and B. In addition, "at least one of A and B" is A, B, or A and B. As used herein, the term "and / or" includes any and all combinations of one or more of the relevant listed items. Throughout the disclosure, the expression "at least one of a, b, and c" means only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof.

[0050] Hereinafter, when multiple elements such as layers, regions, components, etc. are connected to each other, the multiple elements may be directly connected to each other, or the multiple elements may be indirectly connected to each other with other layers, regions, or components placed between the multiple elements. For example, when the specification describes that layers, regions, components, etc. are electrically connected to each other, the layers, regions, components, etc. may be directly electrically connected to each other, and / or the layers, regions, components, etc. may be indirectly electrically connected to each other with other layers, regions, or components placed between the layers, regions, or components.

[0051] The following may refer to the x-axis, y-axis, and z-axis to describe directions or relative positions. The x-axis, y-axis, and z-axis are not limited to the three axes on the Cartesian coordinate system, and may be interpreted in a broad sense including them. For example, the x-axis, y-axis, and z-axis may be perpendicular to each other, but may be different directions that are not perpendicular to each other.

[0052] Figure 1 is a plan view schematically showing a display device 1 according to the embodiment.

[0053] Reference Figure 1 , the display device 1 may include a display area DA and a non-display area NDA. Sub-pixels each including a display element such as a light emitting diode may be arranged in the display area DA and may be operated to generate an image in the display area DA. The non-display area NDA may be an area in which no image is provided and may surround the display area DA. A scan driver and a data driver that provide electrical signals to the sub-pixels of the display area DA and a power supply line through which power such as a driving voltage and a common voltage is provided may be arranged in the non-display area NDA.

[0054] Figure 1 It is shown that the display device 1 has a length in the x-axis direction, and the length in the x-axis direction is less than the length of the display device 1 in the y-axis direction intersecting the x-axis direction. However, the embodiment is not limited thereto. In another embodiment, the length of the display device 1 in the x-axis direction may be greater than its length in the y-axis direction, and the shape of the display device 1 may be variously changed.

[0055] The display device 1 can be applied to various products such as mobile phones, smart phones, personal computers (PCs), mobile communication terminals, electronic notebooks, electronic books, portable multimedia players (PMPs), navigation devices, ultra-mobile PCs, televisions (TVs), laptop computers, monitors, billboards, Internet of Things (IOT) devices, etc. In addition, the display device 1 according to the embodiment can be used for wearable devices such as smart watches, watch phones, glasses-type displays, or head-mounted displays (HMDs). In addition, the display device 1 according to the embodiment can be used as a dashboard of a vehicle and a central information display (CID) set on the center dashboard or dashboard of the vehicle, an interior mirror display for replacing the side mirrors of the vehicle, and as a display screen for rear seat entertainment of the vehicle and set on the rear surface of the front seat.

[0056] Figure 2 It is along Figure 1 A cross-sectional view of the display device 1 taken along line II-II'.

[0057] Reference Figure 2 , the display device 1 may include a substrate 100 , a display element layer 200 , a low-reflection layer 250 , an encapsulation layer 300 , and an input sensing layer 400 .

[0058] The substrate 100 may include glass or a polymer resin. For example, the polymer resin may include polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate or cellulose acetate propionate. The substrate 100 including the polymer resin may have flexible, rollable or bendable properties. The substrate 100 may have a multilayer structure including a layer including the above-mentioned polymer resin and an inorganic layer (not shown).

[0059] The display element layer 200 may include a light emitting diode as a display element, a thin film transistor electrically connected to the light emitting diode, and an insulating layer between the light emitting diode and the thin film transistor.

[0060] The low-reflection layer 250 may be disposed on the display element layer 200, and the encapsulation layer 300 may be disposed on the low-reflection layer 250. For example, the display element layer 200 and / or the low-reflection layer 250 may be sealed with the encapsulation layer 300. The encapsulation layer 300 may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. For example, the encapsulation layer 300 may include a first inorganic encapsulation layer 310, a second inorganic encapsulation layer 330, and an organic encapsulation layer 320. The organic encapsulation layer 320 may be between the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330.

[0061] In some embodiments, the display device 1 may include an encapsulation substrate (not shown) formed of a glass material instead of the encapsulation layer 300. The encapsulation substrate may be disposed on the display element layer 200, and the display element layer 200 may be between the substrate 100 and the encapsulation substrate. A gap may exist between the encapsulation substrate and the display element layer 200, and the gap may be filled with a filling material.

[0062] The input sensing layer 400 may be disposed on the encapsulation layer 300. The input sensing layer 400 may detect an external input (e.g., a touch of an object such as a finger or a pen) so that the display device 1 may obtain coordinate information corresponding to a touch position. The input sensing layer 400 may include a touch electrode and a signal line connected to the touch electrode. The input sensing layer 400 may detect an external input by using a mutual capacitance method or a self-capacitance method.

[0063] In an embodiment, the input sensing layer 400 may include a first touch electrode layer 410 and a second touch electrode layer 430, a touch insulating layer 420, and a planarizing layer 440. The first touch electrode layer 410 may be disposed on the encapsulation layer 300. The touch insulating layer 420, the second touch electrode layer 430, and the planarizing layer 440 may be sequentially disposed on the first touch electrode layer 410. In other words, the touch insulating layer 420 may be between the first touch electrode layer 410 and the second touch electrode layer 430, and the planarizing layer 440 may be disposed on the second touch electrode layer 430.

[0064] The touch insulating layer 420 may include an inorganic insulating material. The planarizing layer 440 may include an organic insulating material. The first touch electrode layer 410 and the second touch electrode layer 430 may be provided in a specific pattern and may include a metal layer.

[0065] In another embodiment, an insulating layer may be additionally located between the input sensing layer 400 and the encapsulation layer 300. For example, another insulating layer may be additionally located between the first touch electrode layer 410 and the second inorganic encapsulation layer 330.

[0066] Figure 3 is a plan view showing a part of the display device 1 according to the embodiment.

[0067] Reference Figure 3, the input sensing layer 400 may include a first touch electrode TE1 including a first touch pattern TP1 and a first bridge pattern BP1, and first signal lines 451a, 451b, and 451c connected to the first touch pattern TP1. The input sensing layer 400 may also include a second touch electrode TE2 including a second touch pattern TP2 and a second bridge pattern BP2, and second signal lines 452a, 452b, and 452c connected to the second touch pattern TP2. For example, each first touch electrode TE1 may include a group of first touch patterns TP1 arranged along the ±y direction and connected to each other through the first bridge pattern BP1 between adjacent first touch patterns TP1. Each second touch electrode TE2 may include a group of second touch patterns TP2 arranged along the ±x direction and connected to each other through the second bridge pattern BP2 between adjacent second touch patterns TP2. The first touch electrode TE1 and the second touch electrode TE2 may cross each other. In an embodiment, the first bridge pattern BP1 and the second bridge pattern BP2 may cross each other without being electrically connected to each other.

[0068] The first touch electrode TE1 and the second touch electrode TE2 may be arranged in the display area DA. The first signal lines 451a, 451b and 451c and the second signal lines 452a, 452b and 452c respectively connected to the first touch pattern TP1 and the second touch pattern TP2 may be arranged in the non-display area NDA. The first touch electrode TE1 may be connected to the sensing terminal portion 460 through the first signal lines 451a, 451b and 451c. The second touch electrode TE2 may be connected to the sensing terminal portion 460 through the second signal lines 452a, 452b and 452c.

[0069] Figure 3 It is shown that the first signal lines 451a, 451b and 451c are connected to the upper side and the lower side of each of the first touch electrodes TE1. However, the embodiment is not limited thereto. In another embodiment, each of the first signal lines 451a, 451b and 451c may be connected only to the upper side or the lower side of the first touch electrode TE1.

[0070] Figure 3 It is shown that the second signal lines 452a, 452b and 452c are connected to the left and right sides of the second touch electrode TE2. However, the embodiment is not limited thereto. In another embodiment, each of the second signal lines 452a, 452b and 452c may be connected only to the left or right side of the corresponding second touch electrode TE2 in the second touch electrode TE2.

[0071] Figure 3The upper first signal lines 451a, 451b and 451c and the lower first signal lines 451a, 451b and 451c are shown to be connected to the sensing terminal portion 460, respectively. However, the embodiment is not limited thereto. In another embodiment, the upper first signal lines 451a, 451b and 451c and the lower first signal lines 451a, 451b and 451c may be connected to the sensing terminal portion 460 in the non-display area NDA and electrically connected to each other.

[0072] Figure 3 It is shown that the left second signal lines 452a, 452b and 452c and the right second signal lines 452a, 452b and 452c are respectively connected to the sensing terminal part 460. However, the embodiment is not limited thereto. In another embodiment, the left second signal lines 452a, 452b and 452c and the right second signal lines 452a, 452b and 452c can be connected to the sensing terminal part 460 in the non-display area NDA and are electrically connected to each other.

[0073] Figure 3 It is shown that the input sensing layer 400 includes a plurality of touch patterns TE applicable to the mutual capacitance method, and the touch pattern TE includes a first touch electrode TE1 and a second touch electrode TE2, the first touch electrode TE1 includes a group of first touch patterns TP1 arranged in the same column, and the second touch electrode TE2 includes a group of second touch patterns TP2 arranged in the same row. However, the embodiment is not limited thereto. In another embodiment, the touch pattern TE of the input sensing layer 400 may adopt a self-capacitance method, whereby the touch patterns TE of the input sensing layer 400 are respectively connected to corresponding signal lines, thereby allowing the coordinates of the touch event to be detected. In the following, for the sake of convenience of explanation, the case where the input sensing layer 400 adopts the mutual capacitance method is described.

[0074] Figure 4 It is shown Figure 3 An enlarged plan view of area IV of the display device 1 is shown in FIG.

[0075] Reference Figure 4 The first touch pattern TP1 and another adjacent first touch pattern TP1 may be electrically connected to each other via the first bridge pattern BP1, and the second touch pattern TP2 and another adjacent second touch pattern TP2 may be electrically connected to each other via the second bridge pattern BP2.

[0076] Each of the first touch pattern TP1, the second touch pattern TP2, the first bridge pattern BP1, and the second bridge pattern BP2 may be a mesh pattern including first and second mesh lines ML1 and ML2. The first mesh line ML1 may extend in the first direction DR1, and the second mesh line ML2 may extend in the second direction DR2.

[0077] Two adjacent first grid lines ML1 and two adjacent second grid lines ML2 may cross at the grid opening ML-OP. In other words, each grid opening ML_OP may be defined or delimited by a pair of adjacent first grid lines ML1 and a pair of adjacent second grid lines ML2 that cross each other. A light emitting diode to be described later may be stacked or disposed below one of the grid openings ML-OP.

[0078] The first bridge pattern BP1 may include an approximately L-shaped line including a portion extending in the first direction DR1 and a portion extending in the second direction DR2. The first bridge pattern BP1 may be separated from the first touch pattern TP1 or in a layer separate from the first touch pattern TP1, and portions of the first bridge pattern BP1 and the first touch pattern TP1 may overlap each other in a plan view and may contact and be electrically connected to each other, for example, through a through hole or opening in an intermediate insulating layer.

[0079] The second bridge pattern BP2 may include portions of the first mesh line ML1 and the second mesh line ML2, and the portions of the first mesh line ML1 and the second mesh line ML2 may be repeatedly connected in the x direction and may extend together. The second bridge pattern BP2 may be formed integrally with the second touch pattern TP2 or in the same layer. Figure 4 As shown in FIG. 1 , a portion of the second touch electrode disposed in an approximately rectangular area between two L-shaped first bridge patterns BP1 may be understood as a second bridge pattern BP2, and a portion of the second touch electrode disposed in other areas except the rectangular area may be understood as a second touch pattern TP2.

[0080] Figure 5 It is along Figure 4 A cross-sectional view of the display device 1 taken along line VV′.

[0081] Reference Figure 5 The input sensing layer 400 may include a first touch electrode layer 410 , a touch insulating layer 420 disposed on the first touch electrode layer 410 , a second touch electrode layer 430 disposed on the touch insulating layer 420 , and a planarization layer 440 disposed on the second touch electrode layer 430 .

[0082] The first touch electrode layer 410 may be disposed on the second inorganic encapsulation layer 330. The organic encapsulation layer 320 may be provided under the second inorganic encapsulation layer 330.

[0083] Some of the first touch pattern TP1, the second touch pattern (not shown), the first bridge pattern BP1, and the second bridge pattern BP2 may be located in the first touch electrode layer 410 or formed in the first touch electrode layer 410, and the others of the first touch pattern TP1, the second touch pattern (not shown), the first bridge pattern BP1, and the second bridge pattern BP2 may be located in the second touch electrode layer 430 or formed in the second touch electrode layer 430. For example, the first touch electrode layer 410 may include the first bridge pattern BP1, and the second touch electrode layer 430 may include the first touch pattern TP1, the second touch pattern (not shown), and the second bridge pattern BP2.

[0084] Adjacent second touch patterns (not shown) may be electrically connected to each other via the second bridge pattern BP2 located on the same layer.

[0085] Adjacent first touch patterns TP1 may be electrically connected to each other via first bridge patterns BP1 located at different layers. For example, adjacent first touch patterns TP1 may be disposed in the second touch electrode layer 430, and the first bridge pattern BP1 electrically connecting the first touch patterns TP1 may be disposed in the first touch electrode layer 410. The first touch pattern TP1 may be connected to the first bridge pattern BP1 through a contact hole CNT formed in the touch insulating layer 420.

[0086] The planarization layer 440 may cover the second touch electrode layer 430 (or the first touch pattern TP1 , the second touch pattern (not shown), and the second bridge pattern BP2 ).

[0087] Figure 5 An example is shown in which the first bridge pattern BP1 is located in the first touch electrode layer 410 and the first touch pattern TP1 and the second bridge pattern BP2 are located in the second touch electrode layer 430. However, the embodiment is not limited thereto. In another embodiment, the first touch pattern TP1 and the first bridge pattern BP1 may be located in the first touch electrode layer 410, and the second touch pattern (not shown) and the second bridge pattern BP2 may be located in the second touch electrode layer 430 without forming the contact hole CNT in the touch insulating layer 420.

[0088] Figure 6 It is shown Figure 4 An enlarged plan view of area VI of the display device 1 is shown in FIG.

[0089] Reference Figure 6, the first touch pattern TP1 may have a grid shape and may define a plurality of openings. For example, the first touch pattern TP1 may include grid lines ML, and the grid lines ML may include first grid lines ML1 extending in the first direction DR1 and second grid lines ML2 extending in the second direction DR2. The first grid lines ML1 and the second grid lines ML2 may be configured to define first to third openings OP1, OP2, and OP3.

[0090] The corresponding sub-pixel may be arranged in each opening defined by the mesh lines ML of the first touch pattern TP1. For example, the first to third sub-pixels P1, P2, and P3 may be arranged in the first to third openings OP1, OP2, and OP3, respectively.

[0091] Figure 6 Also shown are the first to third subpixels P1, P2, and P3. The first to third subpixels P1, P2, and P3 may emit light having different colors. For example, the first subpixel P1 may emit red light, the second subpixel P2 may emit green light, and the third subpixel P3 may emit blue light.

[0092] One of the first bridge patterns BP1 may be disposed between the first subpixel P1 and the second subpixel P2. For example, a portion of one of the first bridge patterns BP1 may extend in the first direction DR1, and some of the first bridge patterns BP1 may be arranged between the first subpixel P1 and the second subpixel P2. A portion of the first bridge pattern BP1 may overlap the first opening OP1 and / or the second opening OP2.

[0093] Another one of the first bridge patterns BP1 may include a portion extending between the second subpixel P2 and the third subpixel P3. For example, a portion of another one of the first bridge patterns BP1 may extend in the second direction DR2 and may be arranged between the second subpixel P2 and the third subpixel P3. A portion of the first bridge pattern BP1 may overlap the second opening OP2 and / or the third opening OP3.

[0094] A portion of the first touch pattern TP1 (eg, the first conductive line TP1-1) may overlap the first bridge pattern BP1 and may extend in the first direction DR1. A portion of the first conductive line TP1-1 may be disposed between the first subpixel P1 and the second subpixel P2.

[0095] Another portion of the first touch pattern TP1 (eg, the second conductive line TP1-2) may overlap the first bridge pattern BP1 and may extend in the second direction DR2. A portion of the second conductive line TP1-2 may be disposed between the second subpixel P2 and the third subpixel P3.

[0096] Figures 7 to 11 is a diagram showing the Figure 6 A cross-sectional view of the display device 1 taken along line AA′.

[0097] Figure 7 is a diagram showing a method according to an embodiment of the present invention. Figure 6 A cross-sectional view of the display device 1 taken along line AA′.

[0098] Reference Figure 7 , a display element layer 200 including a plurality of sub-pixels may be disposed on a substrate 100. In an embodiment, first to third sub-pixels P1, P2, and P3 may be disposed on a substrate 100. The first to third sub-pixels P1, P2, and P3 may include first to third light emitting diodes LED1, LED2, and LED3, respectively, that emit light of a specific color.

[0099] The first to third light emitting diodes LED1, LED2, and LED3 may include first to third subpixel electrodes 1210, 2210, and 3210 and first to third intermediate layers 1220, 2220, and 3220 corresponding to the first to third light emitting diodes LED1, LED2, and LED3, respectively.

[0100] The substrate 100 may include glass or a polymer resin. The substrate 100 including the polymer resin may have flexible, rollable, or bendable properties. The substrate 100 may have a multilayer structure including a layer including the above-mentioned polymer resin and an inorganic layer (not shown).

[0101] The first to third intermediate layers 1220 , 2220 , and 3220 corresponding to the first to third subpixels P1 , P2 , and P3 , respectively, may be electrically connected to the first to third thin film transistors TFT1 , TFT2 , and TFT3 on the substrate 100 , respectively.

[0102] The first intermediate layer 1220 corresponding to the first subpixel P1 may be electrically connected to the first thin film transistor TFT1 through the first subpixel electrode 1210. The first thin film transistor TFT1 may include a first active layer A1, a first gate electrode G1 overlapping a portion of the first active layer A1, and a first source electrode S1 and a first drain electrode D1 contacting a portion of the first active layer A1.

[0103] The second intermediate layer 2220 corresponding to the second subpixel P2 may be electrically connected to the second thin film transistor TFT2 through the second subpixel electrode 2210. The second thin film transistor TFT2 may include a second active layer A2, a second gate electrode G2 overlapping a portion of the second active layer A2, and a second source electrode S2 and a second drain electrode D2 contacting a portion of the second active layer A2.

[0104] The third intermediate layer 3220 corresponding to the third subpixel P3 may be electrically connected to the third thin film transistor TFT3 through the third subpixel electrode 3210. The third thin film transistor TFT3 may include a third active layer A3, a third gate electrode G3 overlapping a portion of the third active layer A3, and a third source electrode S3 and a third drain electrode D3 contacting a portion of the third active layer A3.

[0105] The first to third gate electrodes G1, G2 and G3 may include at least one material selected from the group consisting of aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W) and copper (Cu), and may have a single-layer structure or a multi-layer structure including the above materials.

[0106] A buffer layer 101 for preventing penetration of impurities may be between the first to third active layers A1, A2, and A3 and the substrate 100. A gate insulating layer 103 may be between the first to third active layers A1, A2, and A3 and the first to third gate electrodes G1, G2, and G3. An interlayer insulating layer 105 may be disposed on the first to third gate electrodes G1, G2, and G3. The buffer layer 101, the gate insulating layer 103, and the interlayer insulating layer 105 may include an inorganic insulating material such as silicon oxide (SiO x ), Silicon Nitride (SiN x ), silicon oxynitride (SiON), aluminum oxide (AlO x ), aluminum nitride (AlN x ), titanium oxide (TiO x ) or titanium nitride (TiN x ).

[0107] The first to third source electrodes S1, S2, and S3 may be disposed on the interlayer insulating layer 105, and may be respectively connected to the first to third active layers A1, A2, and A3 through contact holes formed in the interlayer insulating layer 105 and the gate insulating layer 103. The first to third source electrodes S1, S2, and S3 may include Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo, Ti, W, and Cu, and may have a single-layer structure or a multi-layer structure.

[0108] The first to third drain electrodes D1, D2, and D3 may be arranged on the interlayer insulating layer 105, and may be connected to the first to third active layers A1, A2, and A3, respectively, through contact holes formed in the interlayer insulating layer 105 and the gate insulating layer 103. The first to third drain electrodes D1, D2, and D3 may include Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo, Ti, W, and Cu, and may have a single-layer structure or a multi-layer structure. In some embodiments, the first to third source electrodes S1, S2, and S3 and the first to third drain electrodes D1, D2, and D3 may include the same material.

[0109] The first organic insulating layer 107 may be disposed on the first to third thin film transistors TFT1, TFT2, and TFT3. For example, the first organic insulating layer 107 may be disposed to cover the first to third source electrodes S1, S2, and S3 and the first to third drain electrodes D1, D2, and D3. The first organic insulating layer 107 may include an organic insulating material such as acryl, benzocyclobutene, polyimide, or hexamethyldisiloxane. The first organic insulating layer 107 may include a plurality of contact holes. For example, the first organic insulating layer 107 may include a plurality of contact holes overlapped with the first to third drain electrodes D1, D2, and D3, respectively.

[0110] The contact metal CM may be disposed on the first organic insulating layer 107. The contact metal CM may include Al, Cu, and / or Ti, and may have a single-layer structure or a multi-layer structure including the above materials. The contact metal CM may include a plurality of regions, and the plurality of regions of the contact metal CM may overlap with the first to third drain electrodes D1, D2, and D3, respectively. A portion of each region of the contact metal CM may be arranged in a contact hole formed in the first organic insulating layer 107. For example, the plurality of regions of the contact metal CM may contact the first to third drain electrodes D1, D2, and D3, respectively, through the contact holes formed in the first organic insulating layer 107.

[0111] The second organic insulating layer 109 may be between the first organic insulating layer 107 and the first to third sub-pixel electrodes 1210, 2210, and 3210. The second organic insulating layer 109 may include an organic insulating material such as acryl, benzocyclobutene, polyimide, or hexamethyldisiloxane. The second organic insulating layer 109 may include contact holes respectively overlapping a plurality of regions of the contact metal CM.

[0112] The first to third subpixel electrodes 1210, 2210, and 3210 may be disposed on the second organic insulating layer 109. The first to third subpixel electrodes 1210, 2210, and 3210 may be formed as reflective electrodes. The first to third subpixel electrodes 1210, 2210, and 3210 may be formed by forming a reflective layer including Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or a compound thereof and by arranging an ITO, IZO, ZnO, or In on the reflective layer. 2 O 3 In an embodiment, the first to third sub-pixel electrodes 1210, 2210, and 3210 may have a structure in which an ITO layer, an Ag layer, and an ITO layer are sequentially stacked. Of course, the embodiment is not limited thereto, and the first to third sub-pixel electrodes 1210, 2210, and 3210 may be formed of various materials, and the structures of the first to third sub-pixel electrodes 1210, 2210, and 3210 may be variously modified, and the first to third sub-pixel electrodes 1210, 2210, and 3210 may include a single-layer structure or a multi-layer structure.

[0113] The first to third subpixel electrodes 1210 , 2210 , and 3210 may be electrically connected to regions of the contact metal CM respectively overlapping the first to third subpixel electrodes 1210 , 2210 , and 3210 through contact holes formed in the second organic insulating layer 109 .

[0114] According to reference Figure 7In the described embodiment, the first to third thin film transistors TFT1, TFT2 and TFT3 and the first to third sub-pixel electrodes 1210, 2210 and 3210 are electrically connected to each other via the area of ​​the contact metal CM. However, the embodiment is not limited thereto. In another embodiment, the contact metal CM may be omitted, and an organic insulating layer may be between the first to third thin film transistors TFT1, TFT2 and TFT3 and the first to third sub-pixel electrodes 1210, 2210 and 3210. Alternatively, three or more organic insulating layers may be between the first to third thin film transistors TFT1, TFT2 and TFT3 and the first to third sub-pixel electrodes 1210, 2210 and 3210, and the first to third thin film transistors TFT1, TFT2 and TFT3 and the first to third sub-pixel electrodes 1210, 2210 and 3210 may be electrically connected to each other via a plurality of contact metal CMs.

[0115] The subpixel defining layer 111 may cover edge regions (or edges) of the first to third subpixel electrodes 1210, 2210, and 3210. In other words, the subpixel defining layer 111 may include a plurality of openings for exposing the center of each of the first to third subpixel electrodes 1210, 2210, and 3210. Each opening of the subpixel defining layer 111 may be configured to define an emission region of the first to third subpixels P1, P2, and P3.

[0116] The first to third intermediate layers 1220, 2220, and 3220 may be disposed on the first to third subpixel electrodes 1210, 2210, and 3210. For example, the first intermediate layer 1220 may be disposed on the first subpixel electrode 1210 in the opening of the subpixel defining layer 111. The second intermediate layer 2220 may be disposed on the second subpixel electrode 2210 in the opening of the subpixel defining layer 111. The third intermediate layer 3220 may be disposed on the third subpixel electrode 3210 in the opening of the subpixel defining layer 111.

[0117] The first to third intermediate layers 1220, 2220, and 3220 may include an organic emission layer including a low molecular weight material or a polymer material. The first to third intermediate layers 1220, 2220, and 3220 may have a structure in which a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL), and / or an electron injection layer (EIL) are stacked on each other in a single structure or a composite structure.

[0118] The electrode 230 may be arranged on the first to third intermediate layers 1220, 2220, and 3220. The electrode 230 may be formed integrally to cover the first to third intermediate layers 1220, 2220, and 3220. The electrode 230 may be formed as a transparent electrode or a semi-transparent electrode. When the electrode 230 is formed as a transparent electrode or a semi-transparent electrode, the electrode 230 may include one or more materials selected from the group consisting of Ag, Al, Mg, Li, Ca, Cu, lithium fluoride (LiF), MgAg, and CaAg, or a material having a multilayer structure such as LiF / Ca or LiF / Al, and may have a film shape having a thickness of several nanometers to tens of nanometers. Of course, the configuration and material of the electrode 230 are not limited to these examples, and various modifications are possible.

[0119] The cover layer 240 may be disposed on the first to third light emitting diodes LED1, LED2, and LED3. In an embodiment, the cover layer 240 may cover the counter electrode 230. In an embodiment, the cover layer 240 may be configured to improve the emission efficiency of the first to third light emitting diodes LED1, LED2, and LED3 based on the principle of enhanced interference.

[0120] The covering layer 240 may be an organic covering layer including an organic material, an inorganic covering layer including an inorganic material, or a composite covering layer including an organic material and an inorganic material. For example, the covering layer 240 may include a carbocyclic compound, a heterocyclic compound, an amine-containing compound, a porphine derivative, a phthalocyanine derivative, a naphthalocyanine derivative, an alkali metal complex, an alkaline earth metal complex, or any combination thereof.

[0121] The low reflection layer 250 may be arranged on the cover layer 240. Since the cover layer 240 may be arranged on the first to third light emitting diodes LED1, LED2 and LED3, it can also be understood that the low reflection layer 250 may be arranged on the first to third light emitting diodes LED1, LED2 and LED3. The low reflection layer 250 may include an inorganic material having a relatively low reflectivity, and in an embodiment, the low reflection layer 250 may include a metal or a metal oxide. When the low reflection layer 250 includes a metal, the metal may include, for example, ytterbium (Yb), bismuth (Bi), Co, Mo, Ti, zirconium (Zr), Al, Cr, niobium (Nb), Pt, W, indium (In), tin (Sn), iron (Fe), Ni, tantalum (Ta), manganese (Mn), zinc (Zn), germanium (Ge), silver (Ag), Mg, Au, Cu, Ca or a compound thereof. When the low reflection layer 250 includes a metal oxide, the metal oxide may include, for example, TiO 2 、ZrO 2 、 2 O5 , HfO 2 、Al 2 O 3 , ZnO, Y 2 O 3 , BeO, MgO, PbO 2 , WO 3 Of course, the embodiment is not limited thereto, and the material for forming the low reflection layer 250 may be variously modified.

[0122] The encapsulation layer 300 may be disposed on the low-reflection layer 250. The encapsulation layer 300 may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. Figure 7 As shown in FIG, the encapsulation layer 300 may include a first inorganic encapsulation layer 310, an organic encapsulation layer 320, and a second inorganic encapsulation layer 330 that are sequentially stacked.

[0123] The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may include silicon oxide (SiO x ), Silicon Nitride (SiN x ), silicon oxynitride (SiON), aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), Tantalum Oxide (Ta 2 O 5 ), hafnium oxide (HfO 2 ) or zinc oxide (ZnO x , ZnO x It may include ZnO and / or ZnO 2 The first inorganic encapsulating layer 310 and the second inorganic encapsulating layer 330 may have a single layer structure or a multi-layer structure including the above-mentioned materials.

[0124] The organic encapsulation layer 320 may be configured to relieve the internal stress of the first inorganic encapsulation layer 310 and / or the second inorganic encapsulation layer 330. The organic encapsulation layer 320 may include a polymer material. For example, the organic encapsulation layer 320 may include polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane (HMDSO), an acryl resin (e.g., polymethyl methacrylate, polyacrylic acid, etc.), or any combination thereof.

[0125] The encapsulation layer 300 may have a multilayer structure of a first inorganic encapsulation layer 310, an organic encapsulation layer 320, and a second inorganic encapsulation layer 330. In this case, even when a crack occurs in the encapsulation layer 300, the crack does not propagate between the first inorganic encapsulation layer 310 and the organic encapsulation layer 320 or between the organic encapsulation layer 320 and the second inorganic encapsulation layer 330. The encapsulation layer 300 may prevent or minimize external moisture or oxygen from penetrating into the display element layer 200.

[0126] The input sensing layer 400 may be disposed on the encapsulation layer 300. The input sensing layer 400 may include a first touch electrode layer 410, a touch insulating layer 420, a second touch electrode layer 430, and a planarization layer 440. The first touch electrode layer 410 may be directly disposed on the encapsulation layer 300. For example, the first touch electrode layer 410 may be directly disposed on the second inorganic encapsulation layer 330 of the encapsulation layer 300. However, the embodiment is not limited thereto.

[0127] In another embodiment, the input sensing layer 400 may include an insulating film (not shown) between the first touch electrode layer 410 and the encapsulation layer 300. In this case, the insulating film may be disposed on the second inorganic encapsulation layer 330 of the encapsulation layer 300, and may planarize the surface on which the first touch electrode layer 410 is disposed. The insulating film may include silicon oxide (SiO x ), Silicon Nitride (SiN x ), silicon oxynitride (SiON), etc. In some embodiments, the insulating film may further include an organic insulating material.

[0128] The touch insulating layer 420 may be disposed on the first touch electrode layer 410. The touch insulating layer 420 may include an inorganic material or an organic material. When the touch insulating layer 420 includes an inorganic material, the touch insulating layer 420 may include a silicon nitride (SiN x ), aluminum nitride (AlN x ), zirconium nitride (ZrN x ), titanium nitride (TiN x ), Hafnium Nitride (HfN x ), Tantalum Nitride (TaN x ), silicon oxide (SiO x ), aluminum oxide (AlO x ), titanium oxide (TiO x ), zinc oxide (ZnO x ), cerium oxide (CeO x) and silicon oxynitride (SiON). When the touch insulating layer 420 includes an organic material, the touch insulating layer 420 may include at least one material selected from the group consisting of an acryl-based resin, a methacryl-based resin, polyisoprene, a vinyl-based resin, an epoxy-based resin, a urethane-based resin, a cellulose-based resin, and a polyparaxylene-based resin.

[0129] The second touch electrode layer 430 may be disposed on the touch insulating layer 420. The second touch electrode layer 430 may be used as a sensor to detect a touch input of a user. The first touch electrode layer 410 may be used as a connector to connect the touched second touch electrode layer 430 in one direction. For example, the first touch electrode layer 410 may include a first bridge pattern BP1, and the second touch electrode layer 430 may include a first touch pattern TP1. The first bridge pattern BP1 may connect the first touch patterns TP1 to each other (see Figure 4 and Figure 5 ).

[0130] In an embodiment, the first touch electrode layer 410 and the second touch electrode layer 430 may have a structure (eg, a mesh structure) through which light emitted from the first to third light emitting diodes LED1, LED2, and LED3 may pass (see FIG. Figure 4 and Figure 6 ). In an embodiment, the second touch electrode layer 430 may include first to third openings OP1, OP2, and OP3 overlapping the first to third light emitting diodes LED1, LED2, and LED3.

[0131] The first touch electrode layer 410 and the second touch electrode layer 430 may include a metal layer or a transparent conductive layer. The metal layer may include Mo, Ag, Ti, Cu, Al and alloys thereof. The transparent conductive layer may include transparent conductive oxides such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), conductive polymers (such as PEDOT), metal nanowires, carbon nanotubes or graphene.

[0132] The planarization layer 440 may be disposed on the second touch electrode layer 430. The planarization layer 440 may include an inorganic material or an organic material. When the planarization layer 440 includes an inorganic material, the planarization layer 440 may include a silicon nitride (SiN x ), aluminum nitride (AlN x ), zirconium nitride (ZrN x ), titanium nitride (TiN x ), Hafnium Nitride (HfN x ), Tantalum Nitride (TaN x ), silicon oxide (SiO x), aluminum oxide (AlO x ), titanium oxide (TiO x ), zinc oxide (ZnO x ), cerium oxide (CeO x ) and silicon oxynitride (SiON). When the planarization layer 440 includes an organic material, the planarization layer 440 may include at least one material selected from the group consisting of an acryl-based resin, a methacryl-based resin, polyisoprene, a vinyl-based resin, an epoxy-based resin, a urethane-based resin, a cellulose-based resin, and a polyparaxylene-based resin.

[0133] The planarization layer 440 may include a plurality of layers including different materials. For example, the planarization layer 440 may have a multi-layer structure including a silicon oxide (SiO x ) and a second planarizing layer disposed on the first planarizing layer and including an acryl-based resin.

[0134] The first conductive line TP1-1 and the second conductive line TP1-2 of the first touch pattern TP1 of the second touch electrode layer 430 may be spaced apart from each other, and the second light emitting diode LED2 is between the first conductive line TP1-1 and the second conductive line TP1-2 of the first touch pattern TP1 of the second touch electrode layer 430. The second opening OP2 may be provided between the first conductive line TP1-1 and the second conductive line TP1-2. The first conductive line TP1-1 may be connected to the first bridge pattern BP1 of the first touch electrode layer 410 through a contact hole formed in the touch insulating layer 420. Although Figure 7 Although not shown in the figure, the second conductive line TP1 - 2 may also be connected to the first bridge pattern BP1 through a contact hole formed in the touch insulation layer 420 .

[0135] The color filter layer CF may be between the touch insulation layer 420 and the planarization layer 440. For example, in a plan view, the color filter layer CF may be disposed between the first conductive line TP1-1 and the second conductive line TP1-2 on the touch insulation layer 420 and covered by the planarization layer 440. A portion of the color filter layer CF may be disposed in the second opening OP2.

[0136] The color filter layer CF may correspond to the second light emitting diode LED2, and may not be disposed on the first light emitting diode LED1 and the third light emitting diode LED3. Therefore, in the region on the first light emitting diode LED1 and the second light emitting diode LED3, the touch insulating layer 420 and the planarizing layer 440 may be in direct contact with each other. For example, the touch insulating layer 420 and the planarizing layer 440 may be in direct contact with each other within the first opening OP1. The touch insulating layer 420 and the planarizing layer 440 may be in direct contact with each other within the third opening OP3.

[0137] The side surface of the color filter layer CF may be spaced apart from the first conductive line TP1-1 and the second conductive line TP1-2. In other words, the width of the color filter layer CF may be smaller than the width of the second opening OP2. The touch insulating layer 420 and the planarization layer 440 may directly contact each other in a partial area of ​​the second opening OP2 surrounding the color filter layer CF.

[0138] Figure 7 It is shown that the thickness of the color filter layer CF may be greater than the thickness of the second touch electrode layer 430 (e.g., the first wire TP1-1 and the second wire TP1-2). However, the embodiment is not limited thereto. In another embodiment, the thickness of the color filter layer CF may be less than the thickness of the first wire TP1-1 and the second wire TP1-2, and all parts of the color filter layer CF may be disposed in the second opening OP2.

[0139] The second subpixel P2 may emit light of a specific color (e.g., green light). The light emitted from the second subpixel P2 may include a first light L1 (sometimes referred to as a front light) traveling in a direction perpendicular to the upper surface of the substrate 100 (e.g., the +z direction). In addition, the light emitted from the second subpixel P2 may include side light (such as the second light L2 and the third light L3) emitted at a specific angle (e.g., 45 degrees) relative to the upper surface of the substrate 100. In an embodiment, the angle between the second light L2 or the third light L3 and the upper surface of the substrate 100 may be 45 degrees. Therefore, the angle between the first light L1 and the second light L2 may be 45 degrees, and the angle between the first light L1 and the third light L3 may be 45 degrees.

[0140] The brightness of the side light relative to the brightness of the front light can be shown by a graph of brightness relative to angle (LvA). In this case, the front light refers to the light emitted vertically from the upper surface of the light source (e.g., the light emitting device), and the side light means the light emitted at a specific angle from the upper surface of the light source.

[0141] In the present specification, front light may mean light emitted from the second light emitting diode LED2 in a direction perpendicular to the upper surface of the substrate 100 (or the upper surface of the second light emitting diode LED2) (e.g., +z direction). In the present specification, side light may mean light emitted from the second light emitting diode LED2 at a specific angle (e.g., 45 degrees) relative to the upper surface of the substrate 100 (or the upper surface of the second light emitting diode LED2). For example, Figures 7 to 11 The first light L1 shown in FIG. 5 may be front light, and the second light L2 and the third light L3 may be side light.

[0142] In the present specification, LvA may mean a ratio of the brightness of the second light L2 to the brightness of the first light L1, or a ratio of the brightness of the third light L3 to the brightness of the first light L1. For example, LvA may be understood as a value obtained by dividing the brightness of the second light L2 by the brightness of the first light L1, or a value obtained by dividing the brightness of the third light L3 by the brightness of the first light L1.

[0143] The brightness of the side light may be lower than the brightness of the front light. For example, the brightness of the second light L2 or the third light L3 may be lower than the brightness of the first light L1. Therefore, the value of LvA may be expressed as a ratio less than 1 (or as a percentage less than 100%). For example, if the color filter layer CF is not disposed in the path of the emitted light, LvA may be about 35% to about 45%.

[0144] The wavelength range or brightness distribution of the side light may be different from the wavelength range or brightness distribution of the front light. For example, the central wavelength (or wavelength with maximum brightness) of the brightness distribution of the side light may be shorter than the central wavelength of the brightness distribution of the front light. The brightness distribution of the side light may not be consistent with the brightness distribution of the front light and may be biased toward shorter wavelengths (see Fig.12 ). Therefore, the respective brightness distributions of the side light and the front light may be different from each other, so that the colors of the side light and the front light may be different from each other. This may cause a phenomenon in which an image provided by the display device is seen in different colors when the image is seen from the front and when the image is seen at a specific angle, respectively.

[0145] The color filter layer CF may include a material through which green light is selectively transmitted. For example, the color filter layer CF may include a material having a central wavelength of a transmission profile within a range of about 520 nanometers (nm) to about 530 nm.

[0146] The color filter layer CF may selectively transmit light having a peak wavelength in the brightness distribution of the second light L2 or the third light L3, so that the color filter layer CF preferentially transmits a portion of the first light L1 having a wavelength corresponding to the second light L2 or the third light L3. Light that does not overlap with the main wavelength range of the second light L2 or the third light L3 within the wavelength range of the first light L1 may not be transmitted or may be only partially transmitted through the color filter layer CF.

[0147] The color filter layer CF may induce several effects, and three examples of which are described below.

[0148] First, the color filter layer CF may prevent light within a specific wavelength range in the brightness distribution of the first light L1 from being transmitted through the color filter layer CF, or only a portion of the light within a specific wavelength range in the brightness distribution of the first light L1 may be transmitted through the color filter layer CF. In this case, the brightness of the first light L1 may be reduced as a whole (i.e., at all wavelengths), and LvA may be increased. In some embodiments, the LvA of a display device to which a color filter layer CF is applied according to an embodiment may be approximately 60% or greater. In an embodiment, the LvA of a display device to which a color filter layer CF is applied according to an embodiment may be approximately 60.6% or greater.

[0149] Secondly, the color filter layer CF can shift the brightness distribution of the first light L1 to be closer to the brightness distribution of the second light L2 or the third light L3 (see FIG. Fig.13 ). Therefore, by applying the color filter layer CF, the wavelength difference (or color difference) between the front light (eg, the first light L1) and the side light (eg, the second light L2 or the third light L3) may be reduced.

[0150] Third, when the color filter blocks or does not transmit light within a specific wavelength range, the brightness of the light may be reduced as a whole due to the transmittance of the color filter. In the case of the color filter layer CF according to the embodiment, the maximum transmittance (e.g., the transmittance of the center wavelength) may be 90% or more (see Fig.14 ). Therefore, when the color filter layer CF according to the embodiment is applied, the above-mentioned effects (e.g., increasing the brightness ratio between the front light and the side light and reducing the color difference between the front light and the side light) can be achieved without greatly reducing the brightness of all of the first to third lights L1, L2, and L3.

[0151] Of course, the above-mentioned effects are examples, and the embodiment is not limited to these effects.

[0152] Figure 8 is a diagram showing a method according to another embodiment of the present invention. Figure 6 A cross-sectional view of the display device 1 taken along line AA′. Figure 8 Examples and Figure 7 The embodiments of the present invention differ mainly in that Figure 8The size or shape of the color filter layer CF can be Figure 7 The sizes or shapes of the color filter layers CF are different. Figure 8 The other components can be referred to above Figure 7 Those elements described are substantially the same.

[0153] Reference Figure 8 , the color filter layer CF may cover the upper surface of the first conductive line TP1-1 and / or the second conductive line TP1-2. For example, a portion of the color filter layer CF may be disposed in the second opening OP2. Another portion of the color filter layer CF may protrude from the upper surface of the second opening OP2, and a portion thereof may be disposed on the first conductive line TP1-1 or the second conductive line TP1-2.

[0154] In an embodiment, one side surface of the color filter layer CF may exist in the same plane as the side surface of the first wire TP1-1 or the second wire TP1-2. For example, a portion of the color filter layer CF may be disposed on the first wire TP1-1, and the side surface of the color filter layer CF may form the same plane or a continuous surface as the side surface of the first wire TP1-1. Another portion of the color filter layer CF may be disposed on the second wire TP1-2, and the side surface of the color filter layer CF may form the same plane or a continuous surface as the side surface of the second wire TP1-2.

[0155] In another embodiment, the color filter layer CF may extend beyond the edge of the first conductive line TP1-1 or the second conductive line TP1-2. In other words, the first conductive line TP1-1 or the second conductive line TP1-2 may be covered by the color filter layer CF.

[0156] Figure 8 It is shown that the color filter layer CF covers both the upper surface of the first wire TP1-1 and the upper surface of the second wire TP1-2. However, the embodiment is not limited thereto. In another embodiment, the color filter layer CF may cover only the upper surface of only one of the first wire TP1-1 and the second wire TP1-2, or may only partially cover the upper surface of the first wire TP1-1 or the second wire TP1-2.

[0157] The second opening OP2 may be completely filled with the color filter layer CF. In other words, the touch insulation layer 420 and the planarization layer 440 may not directly contact each other in a region overlapping the second opening OP2.

[0158] Figure 8 The effect of the color filter layer CF shown in FIG. 4 can be similar to that of Figure 7 The effect of the color filter layer CF is shown in FIG. Figure 7 The embodiments are different. Figure 8In the embodiment of the present invention, the color filter layer CF is configured to entirely cover the second opening OP2, so that all or more light emitted from the second light emitting diode LED2 and passing through the second opening OP2 can be affected by the color filter layer CF. Therefore, the effect of the color filter layer CF can be greater than Figure 7 The effect of the embodiment shown in .

[0159] Fig. 9 is a diagram showing a method according to another embodiment of the present invention. Figure 6 A cross-sectional view of the display device 1 taken along line AA′. Fig. 9 Examples and Figure 7 The embodiments of the present invention differ mainly in that Fig. 9 The reflection adjustment layer RCL replaces Figure 7 The color filter layer CF. Fig. 9 The other components can be referred to above Figure 7 Those elements described are substantially the same.

[0160] Reference Fig. 9 The reflection adjustment layer RCL may be disposed on the touch insulation layer 420 and the second touch electrode layer 430 .

[0161] In an embodiment, the reflection adjustment layer RCL may cover the touch insulation layer 420 and the second touch electrode layer 430. The reflection adjustment layer RCL may be covered by a planarization layer 440 disposed on the reflection adjustment layer RCL.

[0162] The reflection adjustment layer RCL may include a material that absorbs light within a specific wavelength range. For example, the reflection adjustment layer RCL may include an absorptive metal, an inorganic material, an organic material, an inorganic dye, or an organic dye. In one embodiment, the reflection adjustment layer RCL may include a porphyrin dye.

[0163] The reflection adjustment layer RCL may absorb or attenuate light within a wavelength range of about 580 nm to about 600 nm. For example, the reflection adjustment layer RCL may include a material having a wavelength of minimum transmittance (ie, a central wavelength of 585 nm or 595 nm).

[0164] The portion of the first light L1 having a wavelength within the wavelength range of the second light L2 or the third light L3 may be transmitted through the reflection adjustment layer RCL. The reflection adjustment layer RCL may concentrate on absorbing light having a wavelength that does not strongly overlap with the brightness distribution of the second light L2 or the third light L3 in the brightness distribution of the first light L1.

[0165] Light within a wavelength range greater than a wavelength at which the brightness distribution of the second light L2 or the third light L3 reaches a peak (eg, about 585 nm to about 595 nm within the wavelength range of the first light L1 ) may be absorbed by the reflection adjustment layer RCL.

[0166] Therefore, the reflection adjustment layer RCL can cause Figure 7 or Figure 8 The effect of the color filter layer CF shown in is similar to that of the color filter layer CF shown in . For example, the reflection adjustment layer RCL can be arranged so that light within a specific wavelength range of the wavelength range of the first light L1 can be absorbed or attenuated by the reflection adjustment layer RCL, and may not pass through or only a portion of it can pass through. Therefore, the brightness of the first light L1 can be reduced as a whole, so that LvA can be increased. In some embodiments, the LvA of the display device with the reflection adjustment layer RCL applied according to the embodiment may be about 60% or greater. In an embodiment, the LvA of the display device with the reflection adjustment layer RCL applied according to the embodiment may be about 60.7% or greater.

[0167] In addition, since the reflection adjustment layer RCL can absorb or attenuate light in a wavelength range that does not strongly overlap with the brightness distribution of the second light L2 or the third light L3, the reflection adjustment layer RCL can shift the brightness distribution of the first light L1 closer to the brightness distribution of the second light L2 or the third light L3. Therefore, by applying the reflection adjustment layer RCL, the wavelength difference (or color difference) between the front light (e.g., the first light L1) and the side light (e.g., the second light L2 or the third light L3) can be reduced.

[0168] Of course, the above-mentioned effects are examples, and the embodiment is not limited to these effects.

[0169] Fig.10 is a diagram showing a method according to another embodiment of the present invention. Figure 6 A cross-sectional view of the display device 1 taken along line AA′. Fig.10 Examples and Fig. 9 The main difference of the embodiment is that Fig.10 The area of ​​the reflection adjustment layer RCL in the embodiment may be limited to cover only some light emitting diodes. Fig.10 The other elements of the embodiment may be substantially the same as those described above.

[0170] Reference Fig.10 , the reflection adjustment layer RCL may cover the first wire TP1-1 and / or the second wire TP1-2, and may be disposed between the touch insulation layer 420 and the planarization layer 440. For example, a portion of the reflection adjustment layer RCL may be disposed in the second opening OP2. Another portion of the reflection adjustment layer RCL may protrude from the upper surface of the second opening OP2 in the +z direction, and another portion of the reflection adjustment layer RCL may be disposed on the first wire TP1-1 or the second wire TP1-2.

[0171] In an embodiment, one side surface of the reflection adjustment layer RCL may be in the same plane as the side surface of the first wire TP1-1 or the second wire TP1-2. For example, a portion of the reflection adjustment layer RCL may be disposed on the first wire TP1-1, and the side surface of the reflection adjustment layer RCL may be in the same plane as the side surface of the first wire TP1-1. Another portion of the reflection adjustment layer RCL may be disposed on the second wire TP1-2, and the side surface of the reflection adjustment layer RCL may be in the same plane as the side surface of the second wire TP1-2.

[0172] In another embodiment, the reflection adjustment layer RCL may extend beyond the edge of the first conductive line TP1-1 or the second conductive line TP1-2. In other words, the first conductive line TP1-1 or the second conductive line TP1-2 may be covered by the reflection adjustment layer RCL.

[0173] The reflection adjustment layer RCL may correspond to the second light emitting diode LED2, and may not be disposed on the first light emitting diode LED1 and the third light emitting diode LED3. Therefore, in the region on the first light emitting diode LED1 and the second light emitting diode LED3, the touch insulation layer 420 and the planarization layer 440 may be in direct contact with each other. For example, the touch insulation layer 420 and the planarization layer 440 may be in direct contact with each other within the first opening OP1. The touch insulation layer 420 and the planarization layer 440 may be in direct contact with each other within the third opening OP3.

[0174] Fig.10 An embodiment in which the reflection adjustment layer RCL covers both the upper surface of the first wire TP1-1 and the upper surface of the second wire TP1-2 is shown. However, the embodiment is not limited thereto. In another embodiment, the reflection adjustment layer RCL may only cover the upper surface of one of the first wire TP1-1 and the second wire TP1-2.

[0175] The second opening OP2 may be completely filled with the reflection adjustment layer RCL. In other words, the touch insulation layer 420 and the planarization layer 440 may not directly contact each other in a region overlapping the second opening OP2.

[0176] Fig.11 is a diagram showing a method according to another embodiment of the present invention. Figure 6 A cross-sectional view of the display device 1 taken along line AA′. Fig.11 Examples and Fig.10 The main difference of the embodiment is that Fig.11 The reflection adjustment layer RCL in the embodiment of Fig.10 The reflection adjustment layer RCL in the embodiment has a small area. Fig.11 The other elements of the embodiment may be substantially the same as those described above.

[0177] Reference Fig.11 , the reflection adjustment layer RCL may be disposed between the first conductive line TP1-1 and the second conductive line TP1-2, and may be between the touch insulation layer 420 and the planarization layer 440. A portion of the reflection adjustment layer RCL may be disposed in the second opening OP2.

[0178] The side surface of the reflection adjustment layer RCL may be spaced apart from the first conductive line TP1-1 and the second conductive line TP1-2. In other words, the width of the reflection adjustment layer RCL may be smaller than the width of the second opening OP2. Therefore, the touch insulation layer 420 and the planarization layer 440 may directly contact each other in a partial region of the second opening OP2.

[0179] Fig.11 It is shown that the thickness of the reflection adjustment layer RCL is greater than the thickness of the second touch electrode layer 430 (e.g., the first wire TP1-1 and the second wire TP1-2). However, the embodiment is not limited thereto. In another embodiment, the thickness of the reflection adjustment layer RCL may be less than the thickness of the first wire TP1-1 and the second wire TP1-2, and all parts of the reflection adjustment layer RCL may be disposed in the second opening OP2.

[0180] Fig.12 A graph showing brightness distribution according to wavelengths of front light and side light from pixels or light emitting devices emitting red light, green light, and blue light is shown.

[0181] The first distribution line 10 may indicate distribution of the front light. The first distribution line 10 may specifically show brightness of light of a specific wavelength measured in a direction perpendicular to an upper surface of the light emitting device (or a direction perpendicular to an upper surface of the substrate).

[0182] The second distribution line 20 may show the distribution of the side light. The second distribution line 20 may specifically show the brightness of light of a specific wavelength measured at a specific angle (e.g., 45 degrees) based on the upper surface of the light emitting device. For example, the second distribution line 20 may show the brightness of light of a specific wavelength measured in a direction inclined at about 45 degrees relative to the upper surface of the substrate.

[0183] The x-axis of the graph may indicate wavelength and the y-axis may indicate spectral radiance.

[0184] The wavelength of the peak brightness of the brightness distribution within the wavelength range of a specific color may be the central wavelength of the color. In the red wavelength range, the central wavelength ( Fig.12 The virtual line N) can be obtained from the central wavelength ( Fig.12 The virtual line M) is offset by about 10 nm. Fig.12As shown in FIG. 1 , the central wavelength of the red light wavelength range of the first distribution line 10 may be about 615 nm, and the central wavelength of the red light wavelength range of the second distribution line 20 may be about 605 nm.

[0185] In the blue wavelength range, the central wavelength of the first distribution line 10 may be about 460 nm, and the central wavelength of the second distribution line 20 may be about 455 nm. In the green wavelength range, the central wavelength of the first distribution line 10 may be about 525 nm, and the central wavelength of the second distribution line 20 may be about 510 nm.

[0186] As described above, in the red, green, and blue wavelength ranges, the center wavelength of the side light may be relatively shorter than the center wavelength of the front light. Therefore, depending on the position of the observer, the front light and the side light may be recognized as light with different wavelengths (i.e., different colors). In other words, the color of the same image provided by the same display device may be recognized differently at different viewing angles.

[0187] At all wavelengths, the y value of the first distribution line 10 may be greater than the y value of the second distribution line 20. In other words, at all wavelengths, the brightness of the front light may be greater than the brightness of the side light. For example, at the same x value, the y value of the first distribution line 10 may be greater than the y value of the second distribution line 20. In other words, at the same wavelength, the brightness of the front light may be greater than the brightness of the side light. Therefore, at all wavelengths, the brightness ratio, which is a value obtained by dividing the brightness of the side light by the brightness of the front light, may be less than 1.

[0188] Fig.13 1 shows the corresponding brightness distribution according to the wavelength of the front light before and after applying the color filter layer according to the embodiment. The green wavelength range of the brightness distribution of the front light can be provided by extracting the green wavelength range of the front light according to the wavelength. Fig.13 The brightness distribution shown in .

[0189] Reference Fig.13 , the x-axis represents wavelength (the unit of wavelength is nanometer (nm)), and the y-axis represents brightness and arbitrary units.

[0190] Fig.13 The first brightness 11 generated when the color filter layer according to the embodiment is not applied is shown, and the second brightness 12 generated when the color filter layer according to the embodiment is applied is shown. The first brightness 11 is a comparative example disclosed, showing that the reference is not applied. Figure 7 Describes the state of the color filter layer.

[0191] The first brightness 11 may be greater than the second brightness 12 as a whole. That is, the brightness of the front light before the color filter layer is applied (or the first brightness 11) may be greater than the brightness of the front light after the color filter layer is applied (or the second brightness 12). In other words, by applying the color filter layer according to the embodiment, the brightness of the front light may be reduced as a whole, but the brightness ratio obtained by dividing the brightness of the side light by the brightness of the front light may be increased as a whole.

[0192] By applying the color filter layer according to the embodiment, light in a specific wavelength range (for example, light in a short wavelength range) can be selectively transmitted through the color filter layer. Therefore, by applying the color filter layer according to the embodiment, the effect of moving the wavelength range of the front light toward the short wavelength range as a whole can be achieved. Therefore, in the long wavelength range (for example, about 570nm to about 580nm), the color filter layer can have a greater influence on the first brightness 11, which makes the second brightness 12 more to the left than the first brightness 11 or in a wavelength range relatively shorter than the first brightness 11. This can reduce the wavelength difference between the front light and the side light. Therefore, the chromatic aberration between the front light and the side light can be reduced, so that the visibility of the display device can be enhanced in a wide range of the observer's position.

[0193] Fig.14 is a graph showing the transmittance distribution of front light according to wavelength when the color filter layer according to the embodiment is applied. The green wavelength range of the luminance distribution of the front light can be extracted to provide Fig.14 The curve diagram shown in .

[0194] Reference Fig.14 , the x-axis represents the wavelength (the unit of wavelength is nm), and the y-axis represents the transmittance.

[0195] Fig.14 The first transmittance 31 in FIG. 1 is the transmittance when the color filter layer is not applied as a comparative example disclosed, and the first transmittance is a transmittance of 1.0000, which means 100% when the color filter layer is not applied. The transmittance of the color filter layer according to the embodiment may be a second transmittance 32, and may have Fig.14 The distribution shown in .

[0196] The wavelength in the peak of the transmittance distribution line may be defined as the central wavelength, and the transmittance in the central wavelength may be defined as the maximum transmittance. For example, the wavelength in the peak of the second transmittance may be defined as the central axis 32-λmax of the second transmittance 32, and the transmittance at the central axis 32-λmax of the second transmittance 32 may be defined as the maximum transmittance 32-Tmax of the second transmittance 32.

[0197] In some embodiments, the central axis 32 -λmax of the second transmittance 32 may be located within a wavelength range of about 520 nm to about 530 nm. For example, the central axis 32 -λmax of the second transmittance 32 may be about 525 nm.

[0198] In some embodiments, the maximum transmittance 32 -Tmax of the second transmittance 32 may be about 90% or more. For example, the maximum transmittance 32 -Tmax of the second transmittance 32 may be about 90.5% or more.

[0199] The difference (or distance) between two wavelengths at half the maximum transmittance of the transmittance distribution line may be defined as the full width at half maximum (FWHM). For example, the difference between two points where a line indicating half of the maximum transmittance 32-Tmax of the second transmittance 32 (e.g., about 45% which is half of about 90%) meets the second transmittance 32 may be considered as the full width at half maximum 32-FWHM of the second transmittance 32.

[0200] In some embodiments, the full width at half maximum 32-FWHM of the second transmittance 32 may be about 100 nm or less. For example, the full width at half maximum 32-FWHM of the second transmittance 32 may be about 99.6 nm.

[0201] Fig.15 1 shows the corresponding brightness distribution according to the wavelength of the front light before and after applying the reflection adjustment layer according to various embodiments. The green light wavelength range of the brightness distribution can be provided by extracting the green light wavelength according to the wavelength of the front light. Fig.15 The curve diagram shown in .

[0202] Reference Fig.15 , the x-axis represents the wavelength, the unit of wavelength is nm, and the y-axis represents the brightness.

[0203] Fig.15 The third brightness 13 shows a comparative example in which the reflection adjustment layer according to the embodiment is not applied. The fourth brightness 14 shows a comparative example in which the reflection adjustment layer according to the embodiment is not applied. Fig. 9 The fifth brightness 15 shows the case where the first reflection adjustment layer is applied according to another embodiment. Fig. 9 The first reflection adjustment layer and the second reflection adjustment layer may include different materials. For example, the first reflection adjustment layer and the second reflection adjustment layer may include materials that absorb light within a specific wavelength range, and the wavelength ranges (or central wavelengths) of the light absorbed by the materials may be different (see also Fig.16 ).

[0204] The third brightness 13 may be greater than the fourth brightness 14 and the fifth brightness 15 as a whole. That is, the brightness of the front light before the reflection adjustment layer is applied (or the third brightness 13) may be greater than the brightness of the front light after the reflection adjustment layer is applied (or the fourth brightness 14 and the fifth brightness 15) as a whole. In other words, by applying the reflection adjustment layer according to the embodiment, the brightness of the front light may be reduced as a whole, but the brightness ratio obtained by dividing the brightness of the side light by the brightness of the front light may be increased as a whole.

[0205] The fourth brightness 14 may be overall greater than the fifth brightness 15. That is, when the second reflection adjustment layer is applied, the reduction in brightness of the front light may be greater than when the first reflection adjustment layer is applied. However, when the second reflection adjustment layer is applied, the brightness ratio may be further increased compared to when the first reflection adjustment layer is applied.

[0206] By applying the reflection adjustment layer according to the embodiment, light in a specific wavelength range (e.g., light in a long wavelength range) can be selectively transmitted through the reflection adjustment layer or reflected in the reflection adjustment layer. Therefore, by applying the reflection adjustment layer according to the embodiment, the effect of moving the wavelength range of the front light to the short wavelength range as a whole can be achieved. Therefore, compared with the third brightness 13, the fourth brightness 14 and the fifth brightness 15 can be on the left or in a relatively short wavelength range. This can reduce the wavelength difference between the front light and the side light.

[0207] The fifth brightness 15 may be located in an area toward the left or in an area of ​​relatively shorter wavelengths compared to the fourth brightness 14. Therefore, when the second reflection adjustment layer is applied, the brightness distribution of the front light may be shifted toward shorter wavelengths compared to when the first reflection adjustment layer is applied. Therefore, the effect of reducing the wavelength difference between the front light and the side light in the fifth brightness 15 to which the second reflection adjustment layer is applied may be greater than the effect of reducing the wavelength difference between the front light and the side light in the fourth brightness 14 to which the first reflection adjustment layer is applied.

[0208] When the wavelength difference between the front light and the side light is reduced, the color difference between the front light and the side light can be reduced, so that the visibility of the display device from the range of the observer's position can be improved.

[0209] In the fifth brightness 15, the effect of increasing the brightness ratio between the front light and the side light and reducing the wavelength difference between the front light and the side light may be greater than the effect of increasing the brightness ratio between the front light and the side light and reducing the wavelength difference between the front light and the side light in the fourth brightness 14. Fig.15 As shown in , the brightness of the front light of the fifth brightness 15 can be smaller than the brightness of the front light of the fourth brightness 14 as a whole.

[0210] Fig.16 is a graph showing transmittance distribution according to the wavelength of front light when the reflection adjustment layer according to various embodiments is applied. Fig.16 , the x-axis represents the wavelength, the unit of wavelength is nm, and the y-axis represents the transmittance.

[0211] Fig.16 The third transmittance 33 in FIG. 3 is the transmittance of a comparative example in which the reflection adjustment layer is not applied, resulting in a transmittance of 1.0000 or 100% as a percentage. The fourth transmittance 34 represents the transmittance of the first reflection adjustment layer according to the embodiment. The fifth transmittance 35 represents the transmittance of the second reflection adjustment layer according to another embodiment.

[0212] The reflection adjustment layer may include a material that absorbs, reflects, or otherwise blocks light within a specific wavelength range. The wavelength at the bottom of the valley of the transmittance distribution line may be defined as the central wavelength, and the transmittance in the central wavelength may be defined as the minimum transmittance. For example, the wavelength in the valley of the fourth transmittance 34 may be defined as the central axis 34-λmin of the fourth transmittance 34, and the transmittance at the central axis 34-λmin of the fourth transmittance 34 may be defined as the minimum transmittance 34-Tmin of the fourth transmittance 34. The wavelength at the bottom of the valley of the fifth transmittance 35 may be defined as the central axis 35-λmin of the fifth transmittance 35, and the transmittance at the central axis 35-λmin of the fifth transmittance 35 may be defined as the minimum transmittance 35-Tmin of the fifth transmittance 35.

[0213] The material included in the first reflection adjustment layer having the fourth transmittance 34 and the material included in the second reflection adjustment layer having the fifth transmittance 35 may have different central wavelengths and minimum transmittances.

[0214] In an embodiment, the central axis 34 -λmin of the fourth transmittance 34 may be approximately 595 nm. In an embodiment, the central axis 35 -λmin of the fifth transmittance 35 may be approximately 585 nm.

[0215] In some embodiments, the minimum transmittance 34-Tmin of the fourth transmittance 34 and the minimum transmittance 35-Tmin of the fifth transmittance 35 may be about 50% or less. In an embodiment, within a wavelength range of about 585 nm to about 595 nm, both the fourth transmittance 34 and the fifth transmittance 35 may be about 50% or less.

[0216] Reference Fig.15 and Fig.16 , the brightness and transmittance when the first reflection adjustment layer is applied may be the fourth brightness 14 and the fourth transmittance 34. The brightness and transmittance when the second reflection adjustment layer is applied may be the fifth brightness 15 and the fifth transmittance 35.

[0217] The fifth transmittance 35 may be smaller than the fourth transmittance 34 as a whole. The fifth brightness 15 may be smaller than the fourth brightness 14 as a whole. Therefore, the brightness ratio corresponding to the fifth brightness 15 (the brightness ratio of the display device when the second reflection adjustment layer is applied) may be greater than the brightness ratio corresponding to the fourth brightness 14 (the brightness ratio of the display device when the first reflection adjustment layer is applied). In an embodiment, the brightness ratio corresponding to the fifth brightness 15 may be approximately 60.7%, and the brightness ratio corresponding to the fourth brightness 14 may be approximately 58.5%.

[0218] According to an embodiment, a display device can be provided in which the brightness ratio of the side light relative to the front light is increased (i.e., the brightness difference between the front light and the side light is reduced). In addition, the display device can reduce the wavelength difference between the front light and the side light, so that the color difference between the front light and the side light is reduced, and the position of the observer has less influence on the color of the image seen. The above effects are illustrative, and the effects of the present disclosure are not limited to the above description.

[0219] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for the purpose of limitation. The description of features or aspects within each embodiment should generally be considered applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those of ordinary skill in the art that various changes in form and detail may be made therein without departing from the spirit and scope defined by the appended claims.

Claims

1. A display device, characterized in that: The display device comprises: A first light emitting device, a second light emitting device and a third light emitting device, wherein the first light emitting device, the second light emitting device and the third light emitting device are arranged on a substrate; an encapsulation layer, covering the first light emitting device to the third light emitting device; a touch electrode, disposed on the encapsulation layer, and having a first opening, a second opening, and a third opening respectively overlapping with the first to third light-emitting devices on a plane; A touch insulating layer, disposed on the packaging layer; a color filter layer disposed on the touch insulating layer and also disposed in the second opening of the touch electrode overlapping the second light emitting device; and a planarization layer, disposed on the color filter layer, The planarization layer is in direct contact with the upper surface of the touch insulation layer through the first opening and the third opening of the touch electrode.

2. The display device according to claim 1, characterized in that The width of the color filter layer is smaller than the width of the second opening.

3. The display device according to claim 1, characterized in that The touch electrode includes a first conductive line and a second conductive line, and the second opening is between the first conductive line and the second conductive line.

4. The display device according to claim 3, characterized in that The color filter layer is disposed between the first conductive line and the second conductive line of the touch electrode.

5. The display device according to claim 3, characterized in that The color filter layer covers an upper surface of the first conductive line and an upper surface of the second conductive line of the touch electrode.

6. The display device according to claim 5, characterized in that One side surface of the color filter layer and one side surface of the first conductive line of the touch electrode are in the same plane.

7. The display device according to claim 1, characterized in that The color filter layer has a maximum transmittance in a wavelength range of 520 nm to 530 nm.

8. The display device according to claim 7, characterized in that The maximum transmittance of the color filter layer is 90% or more.

9. The display device according to claim 8, characterized in that The color filter layer has a full width at half maximum of 100 nm or less.

10. The display device according to claim 1, characterized in that The brightness of the display device measured in a direction inclined at 45 degrees to the upper surface of the substrate is 60% or more of the brightness of the display device measured in a direction perpendicular to the upper surface of the substrate at 90 degrees.

Images