Deep ultraviolet LED packaging structure of hole-digging lens

By adopting hole-punched quartz lenses and optimized ceramic substrate design in deep UV LED packaging structures, the problem of light refractive index gradient in traditional packaging structures is solved, and more efficient ultraviolet light extraction and light extraction are achieved Effect.

CN222485217UActive Publication Date: 2025-02-14ADVANCED ULTRAVIOLET OPTOELECTRONICS CO LTD
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Patent Information

Application Number
CN202421229484.2
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-05-31
Publication Date
2025-02-14
Estimated Expiration
2034-05-31

AI Technical Summary

Technical Problem

In the traditional deep ultraviolet LED packaging structure, the refractive index gradient of the dielectric layer through which light passes is not suitable, resulting in poor extraction of deep ultraviolet light, and the dam structure will block light and affect ultraviolet light.

Method used

Using hole-cut quartz lenses and optimized design ceramic substrate structures, including the protrusions of the first copper-plated layer and the annular arrangement of the second copper-plated layer, combined with the organic fill layer, a gradient layer with a gradually reduced refractive index is formed to reduce the dam enclosure. Light blocking effect.

Benefits of technology

The extraction effect of deep ultraviolet light is improved, the barrier of the dam to ultraviolet light is reduced, and the performance of ultraviolet light is achieved is achieved.

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Abstract

The utility model belongs to the technical field of deep ultraviolet LED packaging structures, and particularly relates to a deep ultraviolet LED packaging structure of a dug hole lens, which comprises a ceramic substrate, a first copper plating layer, a UVC chip, an organic filling layer, a dug hole quartz lens and a second copper plating layer, the first copper plating layer is welded at the center of the ceramic substrate, a bulge is arranged at the center of the first copper plating layer, and the UVC chip is welded at the center of the second copper plating layer. The protrusions of the first copper plating layer are cylindrical, the UVC chip is welded to the protrusions of the first copper plating layer, the ceramic substrate is cylindrical, and the second copper plating layer is annularly arranged on the edge of the upper surface of the ceramic substrate. According to the utility model, the three-dimensional structure of the ceramic substrate is optimized and designed, so that the first copper-plated layer at the center of the ceramic substrate is raised, the height of the UVC chip after welding is raised, the side surface of the UVC chip emits light after the UVC chip is raised, and the light blocking of the second copper-plated layer surrounding the periphery is reduced, thereby achieving the best ultraviolet light extraction effect.
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Description

Technical Field

[0001] The utility model belongs to the technical field of deep ultraviolet LED packaging structures, and in particular relates to a deep ultraviolet LED packaging structure with a hole-digging lens. Background Art

[0002] At present, the deep ultraviolet packaging mainly adopts a three-dimensional dam ceramic substrate plated with copper, nickel and gold. The deep ultraviolet chip is welded in the cavity of the ceramic substrate with a three-dimensional dam using the eutectic process of gold and tin welding. By adding quartz flat glass and quartz spherical lens, the bonding station is on the steps of the three-dimensional dam to meet the requirements of deep ultraviolet chip packaging and light output. Because the only glass material that can transmit the deep ultraviolet 250nm-315nm band is quartz glass of model JGS1 and JGS2, the solid light-transmitting flat and spherical glass are all made of quartz.

[0003] There is an air gap between the quartz lens and the chip, and the light-emitting interface of the deep ultraviolet flip chip is a sapphire substrate. In the traditional deep ultraviolet packaging form, the deep ultraviolet light passes through sapphire, air, quartz glass and finally enters the air. The refractive index of the interface during the whole process is from high to low, then high, and then low. According to the Fresnel effect, if the deep ultraviolet light is to have a better extraction effect, the refractive index of the medium layer through which the light passes needs to gradually decrease from the sapphire of the chip, and the slower the gradient of the refractive index decrease, the better. The refractive index of the traditional packaging form goes from high to low, then high, and then low, which will greatly affect the extraction effect of the deep ultraviolet light. In addition, in order to ensure the fixation of the lens, the traditional packaging structure has a dam on the side wall, which will block the light and affect the ultraviolet emission. Utility Model Content

[0004] In view of the technical problem that the above-mentioned traditional packaging structure affects the ultraviolet emission, the utility model provides a deep ultraviolet LED packaging structure with a hole-punched lens.

[0005] In order to solve the above technical problems, the technical solution adopted by the utility model is:

[0006] A deep ultraviolet LED packaging structure with a hole-punched lens comprises a ceramic substrate, a first copper-plated layer, a UVC chip, an organic filling layer, a hole-punched quartz lens and a second copper-plated layer, wherein the first copper-plated layer is welded at the center of the ceramic substrate, a protrusion is provided at the center of the first copper-plated layer, the protrusion of the first copper-plated layer is cylindrical, the UVC chip is welded on the protrusion of the first copper-plated layer, the ceramic substrate is cylindrical, the second copper-plated layer is annularly arranged at the edge of the upper surface of the ceramic substrate, the hole-punched quartz lens is embedded between the protrusion of the first copper-plated layer and the second copper-plated layer, and the organic filling layer is arranged between the UVC chip and the hole-punched quartz lens.

[0007] It also includes a positive electrode surface and a negative electrode surface, which are arranged at the bottom of the ceramic substrate, and the positive electrode surface and the negative electrode surface are both electrically connected to the first copper-plated layer through the ceramic substrate.

[0008] The organic filling layer is made of fluorocarbon compounds, carbon silicon compounds, fluorine silicon compounds or imine compounds.

[0009] The UVC chip adopts ZK-MZ-D800-5W deep ultraviolet LED chip, the wavelength range of the UVC chip is 200nm-320nm, and the UVC chip adopts a front-mounted, vertical or flip-mounted chip.

[0010] The hole-digging quartz lens is bonded and connected to the first copper-plated layer and the second copper-plated layer by means of glue dispensing.

[0011] The bottom of the hole-punched quartz lens is cylindrical, the top of the hole-punched quartz lens is hemispherical, the hole-punched quartz lens has a hole from the bottom surface to the hemispherical top, and the cylindrical bottom of the hole-punched quartz lens is embedded between the protrusion of the first copper-plated layer and the second copper-plated layer.

[0012] Compared with the prior art, the utility model has the following beneficial effects:

[0013] The utility model optimizes and designs the three-dimensional structure of the ceramic substrate, so that the first copper-plated layer in the center of the ceramic substrate is raised, so that the height of the UVC chip is raised after welding. After the UVC chip is raised, the side of the UVC chip emits light, and the utility model reduces the light blocking of the second copper-plated layer of the surrounding dam to achieve the best ultraviolet light extraction effect. The utility model adds a peripheral second copper-plated layer and a raised first copper-plated layer in the middle to the ceramic substrate, so that there is a card slot with a dam recessed between the two, which makes it convenient for batch operation. In addition, after digging a hole in the quartz lens on the glue dispensing cover, there will be glue overflow. After the overflowed glue is solidified, the glue overflow protection at both ends of the card slot can better solve the airtightness problem. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] In order to more clearly illustrate the implementation of the utility model or the technical solution in the prior art, the following is a brief introduction to the drawings required for the implementation or the prior art description. Obviously, the drawings in the following description are only exemplary, and for ordinary technicians in this field, other implementation drawings can be derived from the provided drawings without creative work.

[0015] The structures, proportions, sizes, etc. illustrated in this specification are only used to match the contents disclosed in the specification so as to facilitate understanding and reading by persons familiar with the technology. They are not used to limit the conditions under which the present invention can be implemented, and therefore have no substantial technical significance. Any structural modification, change in proportion or adjustment in size shall still fall within the scope of the technical contents disclosed in the present invention without affecting the effects and purposes that can be achieved by the present invention.

[0016] Figure 1 It is a schematic diagram of the structure of the utility model;

[0017] Figure 2 It is a cross-sectional view of the hole-digging quartz lens of the utility model;

[0018] Figure 3 It is a top view of the hole-digging quartz lens of the utility model.

[0019] Among them: 1 is a ceramic substrate, 2 is a first copper-plated layer, 21 is a protrusion, 3 is a UVC chip, 4 is an organic filling layer, 5 is a hole-punched quartz lens, 6 is a second copper-plated layer, 7 is a positive electrode surface, and 8 is a negative electrode surface. DETAILED DESCRIPTION

[0020] In order to make the purpose, technical solutions and advantages of the embodiments of the utility model clearer, the technical solutions in the embodiments of the utility model will be clearly and completely described below. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. These descriptions are only to further illustrate the features and advantages of the utility model, rather than to limit the claims of the utility model. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.

[0021] The following is a further detailed description of the specific implementation of the present invention in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0022] The terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise specified, "plurality" means two or more.

[0023] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0024] In this embodiment, if Figure 1 As shown, it includes a ceramic substrate 1, a first copper-plated layer 2, a UVC chip 3, an organic filling layer 4, a hole-punched quartz lens 5, and a second copper-plated layer 6. The first copper-plated layer 2 in the welding area of ​​the UVC chip 3 in the middle of the ceramic substrate 1 is provided with a protrusion to ensure that the UVC chip 3 is not blocked by the dam after emitting light. The second copper-plated layer 6 on the periphery of the ceramic substrate 1 and the protrusion 21 of the first copper-plated layer 2 inside are used to limit the hole-punched quartz lens 5. The second copper-plated layer 6 and the protrusion 21 of the first copper-plated layer 2 are bonded to the hole-punched quartz lens 5 by dispensing glue in the middle of the limiting position. When bonding, the hole-punched quartz lens 5 is covered, just enough to make the silicone overflow to the dispensing position. When the silicone overflows, the airtightness of the lamp bead is guaranteed. An organic filling layer 4 is placed above the UVC chip 3. The material of the organic filling layer 4 includes but is not limited to fluorocarbon compounds (such as perfluoropolyether), carbon silicon compounds (such as silicone resin), fluorosilicon compounds, imide compounds (such as polyimide), etc. The organic filling layer 4 replaces the air, so that the deep ultraviolet light can achieve a gradual change in refractive index, thereby better extracting the ultraviolet light.

[0025] Furthermore, the positive electrode surface 7 and the negative electrode surface 8 of the deep ultraviolet LED packaging structure are at the bottom of the ceramic substrate 1, and the positive electrode surface 7 and the negative electrode surface 8 both pass through the ceramic substrate 1 to be connected to the UVC chip 3, and the deep ultraviolet LED packaging structure is connected to the lamp bead welding pad through the positive electrode surface 7 and the negative electrode surface 8 to be energized.

[0026] Furthermore, the bottom of the hole-punched quartz lens 5 is cylindrical, and the top of the hole-punched quartz lens 5 is hemispherical. The hole-punched quartz lens 5 is opened from the bottom surface to the hemispherical top, and the cylindrical bottom of the hole-punched quartz lens 5 is embedded between the protrusion 21 of the first copper-plated layer 2 and the second copper-plated layer 6.

[0027] Further, preferably, the UVC chip 3 adopts a ZK-MZ-D800-5W deep ultraviolet LED chip, the wavelength range of the UVC chip 3 is 200nm-320nm, and the UVC chip 3 adopts a top-mounted, vertical or flip-mounted chip.

[0028] Only the preferred embodiments of the present invention are described in detail above, but the present invention is not limited to the above embodiments. Various changes can be made within the knowledge scope of ordinary technicians in this field without departing from the purpose of the present invention, and various changes should be included in the protection scope of the present invention.

Claims

1. A deep ultraviolet LED packaging structure with a hole-punch lens, characterized in that: The invention comprises a ceramic substrate (1), a first copper-plated layer (2), a UVC chip (3), an organic filling layer (4), a hole-punched quartz lens (5) and a second copper-plated layer (6); the first copper-plated layer (2) is welded at the center of the ceramic substrate (1); a protrusion (21) is provided at the center of the first copper-plated layer (2); the protrusion (21) of the first copper-plated layer (2) is cylindrical; the UVC chip (3) is welded on the protrusion (21) of the first copper-plated layer (2); the ceramic substrate (1) is cylindrical; the second copper-plated layer (6) is annularly arranged at the edge of the upper surface of the ceramic substrate (1); the hole-punched quartz lens (5) is embedded between the protrusion (21) of the first copper-plated layer (2) and the second copper-plated layer (6); and the organic filling layer (4) is arranged between the UVC chip (3) and the hole-punched quartz lens (5).

2. The deep ultraviolet LED packaging structure with a hole-punched lens according to claim 1, characterized in that: It also comprises a positive electrode surface (7) and a negative electrode surface (8), wherein the positive electrode surface (7) and the negative electrode surface (8) are arranged at the bottom of the ceramic substrate (1), and the positive electrode surface (7) and the negative electrode surface (8) both pass through the ceramic substrate (1) and are electrically connected to the first copper-plated layer (2).

3. The deep ultraviolet LED packaging structure with a hole-punched lens according to claim 1, characterized in that: The organic filling layer (4) is made of fluorocarbon compounds, carbon silicon compounds, fluoro silicon compounds or imine compounds.

4. The deep ultraviolet LED packaging structure with a hole-punched lens according to claim 1, characterized in that: The UVC chip (3) adopts a ZK-MZ-D800-5W deep ultraviolet LED chip, the wavelength range of the UVC chip (3) is 200nm-320nm, and the UVC chip (3) adopts a front-mounted, vertical or flip-mounted chip.

5. The deep ultraviolet LED packaging structure with a hole-punched lens according to claim 1, characterized in that: The hole-punched quartz lens (5) is bonded and connected to the first copper-plated layer (2) and the second copper-plated layer (6) by means of glue dispensing.

6. The deep ultraviolet LED packaging structure with a hole-punched lens according to claim 1, characterized in that: The bottom of the hole-punched quartz lens (5) is cylindrical, the top of the hole-punched quartz lens (5) is hemispherical, the hole-punched quartz lens (5) has a hole from the bottom surface to the hemispherical top, and the cylindrical bottom of the hole-punched quartz lens (5) is embedded between the protrusion (21) of the first copper-plated layer (2) and the second copper-plated layer (6).