Wafer structure
By setting the test element group at least partially in the cross region in the wafer structure and adjusting its shape and size according to the width of the cutting channel, the TEG residue problem is solved, and smaller cutting residues and better product electrical properties are achieved.
Patent Information
- Application Number
- CN202421290768.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-06
- Publication Date
- 2025-03-18
- Estimated Expiration
- 2034-06-06
AI Technical Summary
In the prior art, the shape of the TEG is rectangular. When the width of the cutting path is smaller than the width of the TEG, there will be a large area of TEG residue, which may lead to poor electrical properties of the product.
A wafer structure is designed in which the test element set is at least partially completely within a cross region formed by the junction position of the first cutting path and the second cutting path. The test element set can be round, rhombus or triangular in shape and its size can be adapted to the width of the cutting path to ensure complete removal.
By placing the test element group in the junction area of the cutting channel, even if its size is larger than the size of the cutting channel, the cutting residue of TEG can be minimized and the product electrical properties can be improved.