Power semiconductor, heat dissipation system and power conversion equipment

Abstract

The utility model discloses a power semiconductor, heat dissipation system and power conversion equipment relates to power semiconductor heat dissipation technical field, including insulating plate and substrate, the insulating plate includes insulating layer, chip is used for being arranged on the first side of insulating layer, the substrate has a plurality of enclosing surface, each enclosing surface can enclose to form heat conduction cavity, and the heat conduction cavity is provided with the heat conduction cavity. A phase change working medium used for heat conduction is arranged in the heat conduction cavity, the heat conduction cavity can make direct or indirect contact with the first side face or the second side face of the insulating layer, and the phase change working medium in the heat conduction cavity can transmit heat from the heat source position to the cold source position through evaporation and condensation. According to the power semiconductor disclosed by the utility model, the substrate is directly attached to the insulating layer of the insulating plate, so that the heat transfer path of the power semiconductor device is effectively shortened, and the heat dissipation efficiency is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of power semiconductor heat dissipation, and more specifically to a power semiconductor, a heat dissipation system and a power conversion device. Background Art

[0002] As a core component of electrical equipment such as inverters and PCS (Power Conversion System), power semiconductor devices have seen their heat flux density continue to increase driven by technological advances. In order to avoid the problem of air entering and increasing thermal resistance due to tiny uneven surfaces when connecting power semiconductor devices to the heat sink surface, the current solution is to use interface materials for filling. However, the thermal resistance of these interface materials is usually large, which has become one of the main bottlenecks limiting the heat dissipation efficiency of power semiconductor devices.

[0003] Combination Figure 1 A power semiconductor device 01 in the current technology includes a plastic package 010, a potting compound 011 (not shown in the figure), a chip 012, a chip connection layer 013, an insulating plate 014 (DBC, including a first metal layer 0141, an insulating layer 0142 and a second metal layer 0143), a substrate connection layer 015 and a substrate 016, which are arranged in sequence. The substrate 016 is connected to the substrate 03 through the interface material 02, and the substrate 03 is connected to the heat sink 04. When the power semiconductor device 01 is working, the chip 012 will generate heat, and the heat will pass through the insulating plate 014, the substrate 016, the interface material 02 and the substrate 03 in sequence until it is dissipated by the heat sink 04, and its heat dissipation efficiency is low.

[0004] Therefore, how to improve the heat dissipation efficiency of power semiconductor devices has become a technical problem that needs to be urgently solved by those skilled in the art. Utility Model Content

[0005] In view of this, an object of the present invention is to provide a power semiconductor to improve the heat dissipation efficiency of the power semiconductor device.

[0006] Another object of the present invention is to provide a heat dissipation system including the power semiconductor.

[0007] Another object of the present utility model is to provide a power conversion device including the above-mentioned power semiconductor or the above-mentioned heat dissipation system.

[0008] In order to achieve the above purpose, the utility model provides the following technical solutions:

[0009] A power semiconductor comprising:

[0010] An insulating board, comprising an insulating layer, wherein the chip is arranged on a first side of the insulating layer;

[0011] The substrate has a plurality of enclosed surfaces, the enclosed surfaces enclose a heat-conducting cavity, a phase-change medium for heat conduction is arranged in the heat-conducting cavity, and the heat-conducting cavity is in direct or indirect contact with the first side surface or the second side surface of the insulating layer.

[0012] Optionally, in the above power semiconductor, the heat-conducting cavity is in direct contact with the first side surface or the second side surface of the insulating layer, and the insulating layer and the enclosing surface together enclose to form the heat-conducting cavity.

[0013] Optionally, in the above-mentioned power semiconductor, the heat-conducting cavity is in direct contact with the first side surface of the insulating layer, and the chip is arranged on the enclosing surface of the substrate and the insulating layer opposite to each other; or,

[0014] The heat conduction cavity is in direct contact with the second side surface of the insulating layer, and the chip is arranged on the first side surface of the insulating layer.

[0015] Optionally, in the above power semiconductor, the heat-conducting cavity is in indirect contact with the first side surface or the second side surface of the insulating layer, and each of the enclosed surfaces encloses to form an independent heat-conducting cavity.

[0016] Optionally, in the above power semiconductor, the insulating plate includes a first metal layer arranged on a first side of the insulating layer, and the chip is used to be arranged on the first metal layer; and / or,

[0017] The insulating plate includes a second metal layer disposed between the insulating layer and the substrate.

[0018] Optionally, in the above-mentioned power semiconductor, a direction perpendicular to the extension plane of the substrate is a vertical direction, and a projection area of ​​the substrate in the vertical direction is larger than a projection area of ​​the chip in the vertical direction;

[0019] The projection of the substrate in the vertical direction coincides with the projection of the chip in the vertical direction.

[0020] Optionally, in the above-mentioned power semiconductor, one insulating plate corresponds to one or more substrates; or,

[0021] One substrate corresponds to one or more insulating plates.

[0022] A heat dissipation system comprises the above-mentioned power semiconductor and a heat dissipation component, wherein the heat dissipation component is used to dissipate heat from the power semiconductor.

[0023] Optionally, in the above heat dissipation system, the heat dissipation component includes a heat sink, and the power semiconductor is arranged on the heat sink.

[0024] Optionally, in the above heat dissipation system, the power semiconductor is bonded to the heat sink; or,

[0025] The heat sink is provided with an embedding groove, and the power semiconductor is embedded in the embedding groove.

[0026] Optionally, in the above-mentioned heat dissipation system, the heat dissipation component includes a heat exchange device and a heat sink, the power semiconductor is arranged on the heat sink, the heat sink has a cooling cavity, the cooling cavity is filled with a cooling medium, and the cooling cavity forms a cooling circuit with the heat exchange device through a circulation pipeline, and the cooling circuit can transfer heat from the heat sink to the heat exchange device through the circulation of the cooling medium.

[0027] Optionally, in the above-mentioned heat dissipation system, the cooling medium is a non-phase-changing cooling medium, and the heat exchange device is a heat exchanger;

[0028] The heat sink and the heat exchanger form the cooling circuit through the circulation pipeline, and a circulation pump is arranged on the circulation pipeline. The circulation pump can drive the cooling medium to circulate and transfer heat from the heat sink to the heat exchanger.

[0029] Optionally, in the above heat dissipation system, the cooling medium is a phase-change cooling medium, and the heat exchange device is a condenser;

[0030] The heat sink and the condenser form the cooling circuit through the circulation pipeline. In the vertical direction, the condenser is arranged above the heat sink. The cooling medium absorbs heat at the heat sink and is converted into a gas phase and enters the condenser. It releases heat and condenses into a liquid phase in the condenser and flows back to the cooling cavity to form a cycle.

[0031] A power conversion device comprises a housing and the above-mentioned power semiconductor, wherein the power semiconductor is arranged in the housing; or,

[0032] It comprises a shell and the above-mentioned heat dissipation system, wherein the power semiconductor is arranged in the shell.

[0033] Optionally, in the above-mentioned power conversion device, the shell is provided with a first cavity and a second cavity, a partition is provided between the first cavity and the second cavity, the power semiconductor is provided in the first cavity, and the heat dissipation component is provided in the second cavity, and the power semiconductor and the heat dissipation component are indirectly contacted and dissipated through the partition, or directly contacted and dissipated through the window on the partition.

[0034] Optionally, in the above-mentioned power conversion device, it also includes a cover body, which is arranged on the shell and protected outside the heat dissipation component, and an air inlet and an air outlet are formed between the cover body and the shell, and the air inlet and the air outlet are opposite to the heat dissipation component.

[0035] The power semiconductor provided by the utility model includes an insulating plate and a substrate, an insulating plate, an insulating plate and a substrate, an insulating plate including an insulating layer, a chip is used to be arranged on the first side of the insulating layer, the substrate has a plurality of enclosing surfaces, each enclosing surface can enclose to form a heat-conducting cavity, a phase-change medium for heat conduction is arranged in the heat-conducting cavity, the heat-conducting cavity can be in direct or indirect contact with the first side or the second side of the insulating layer, and the phase-change medium in the heat-conducting cavity can transfer heat from the heat source to the cold source through evaporation and condensation, that is, it can transfer heat from the side of the power semiconductor close to the chip to the side away from the chip, and finally, heat can be dissipated through a heat dissipation component arranged separately or directly dissipated with the external environment to achieve the effect of efficient heat dissipation, and the phase change principle can play a role in rapid temperature uniformity and heat transfer. Compared with the prior art, the power semiconductor provided by the utility model directly fits the substrate and the insulating layer of the insulating plate, can cancel the setting of the connection layer such as the interface material, and effectively shortens the heat transfer path of the power semiconductor device, reduces thermal resistance, enhances the temperature uniformity of the heat dissipation system, and improves the heat dissipation efficiency.

[0036] The heat dissipation system and power conversion device disclosed in the present invention both include the above-mentioned power semiconductor. Since they have the above-mentioned power semiconductor, they also have the above-mentioned beneficial effects, which will not be described in detail here. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0038] Figure 1 is a schematic diagram of a power semiconductor in the prior art;

[0039] Figure 2 It is a schematic diagram of the structure of the substrate disclosed in the embodiment of the utility model;

[0040] Figure 3 It is a schematic diagram of the first power semiconductor disclosed in the utility model;

[0041] Figure 4 A schematic diagram of a second power semiconductor disclosed in the utility model;

[0042] Figure 5A schematic diagram of a third power semiconductor disclosed in the utility model;

[0043] Figure 6 It is a schematic diagram of a fourth power semiconductor disclosed in the utility model;

[0044] Figure 7 is a schematic diagram of a fifth power semiconductor disclosed in the utility model;

[0045] Figure 8 is a schematic diagram of a sixth power semiconductor disclosed in the utility model;

[0046] Fig. 9 is a schematic diagram of a seventh power semiconductor disclosed in the utility model;

[0047] Fig.10 is a schematic diagram of an eighth power semiconductor disclosed in the utility model;

[0048] Fig.11 This is a schematic diagram of the structure of the first power conversion device disclosed in the utility model;

[0049] Fig.12 It is a structural schematic diagram of the second power conversion device disclosed in the utility model;

[0050] Fig.13 This is a schematic structural diagram of the third power conversion device disclosed in the utility model.

[0051] Among them, 01 is a power semiconductor device, 010 is a plastic package, 011 is a potting compound, 012 is a chip, 013 is a chip connection layer, 014 is an insulating board, 0141 is a first metal layer, 0142 is an insulating layer, 0143 is a second metal layer, 015 is a substrate connection layer, 016 is a substrate, 02 is an interface material, 03 is a substrate, 031 is a first side wall surface, 032 is a second side wall surface, 04 is a radiator, 041 is a radiator substrate, 042 is a fin, 05 is a pipeline, 06 is a circulating pump, 07 is a heat exchanger, 08 is a condenser, 09 is a heat sink, 091 is a cooling cavity, 10 is a shell, 11 is an inductor, 12 is a heating device, 13 is a circuit board, 14 is a cover, 15 is an air outlet, and 16 is an air inlet. DETAILED DESCRIPTION

[0052] The core of the utility model is to disclose a power semiconductor to improve the heat dissipation efficiency of the power semiconductor device.

[0053] Another core of the utility model is to disclose a heat dissipation system including the above-mentioned power semiconductor.

[0054] Another core of the utility model is to disclose a power conversion device including the above-mentioned power semiconductor or the above-mentioned heat dissipation system.

[0055] The following is an explanation of the embodiments with reference to the accompanying drawings. In addition, the embodiments shown below do not limit the contents of the utility model described in the claims. In addition, the entire contents of the structures represented by the following embodiments are not limited to those necessary as solutions of the utility model described in the claims. It should be noted that, for ease of description, only the parts related to the utility model are shown in the accompanying drawings. In the absence of conflict, the embodiments in the utility model and the features in the embodiments can be combined with each other.

[0056] Combination Figure 3-Figure 10 The power semiconductor disclosed in the embodiment of the utility model includes an insulating plate 014 and a substrate 03. The insulating plate 014 includes an insulating layer 0142. The chip 012 is used to be arranged on the first side of the insulating layer 0142. The substrate 03 has multiple enclosure surfaces, each of which can enclose a heat-conducting cavity. A phase-change medium for heat conduction is arranged in the heat-conducting cavity. The heat-conducting cavity can be in direct or indirect contact with the first side or the second side of the insulating layer 0142. The phase-change medium in the heat-conducting cavity can transfer heat from the heat source to the cold source through evaporation and condensation, that is, it can transfer heat from the side of the power semiconductor close to the chip 012 to the side away from the chip 012. Finally, the heat can be dissipated through a heat dissipation component that is arranged separately or directly dissipated with the external environment to achieve the effect of efficient heat dissipation, and the phase change principle can play a role in rapid temperature equalization and heat transfer. The chip 012 can be specifically arranged on the insulating plate 014 or the substrate 03, and only needs to be located on the same side outside the heat-conducting cavity.

[0057] Compared with the prior art, the power semiconductor disclosed in the embodiment of the utility model directly bonds the substrate 03 with the insulating layer 0142 of the insulating plate 014, which can eliminate the setting of connecting layers such as interface materials, and effectively shorten the heat transfer path of the power semiconductor device 01, reduce thermal resistance, enhance the temperature uniformity of the heat dissipation system, and improve heat dissipation efficiency.

[0058] The substrate 03 may be a VC (vapor chamber, heat spreader), a heat pipe or other structure with a phase change temperature-averaging cavity. The insulating layer 0142 may be a composite material substrate such as a carbon fiber reinforced polymer substrate (CFRP), a glass fiber reinforced plastic (FR-4), a metal matrix composite material substrate, and an insulating material substrate such as ceramic, quartz, or diamond.

[0059] Specifically, when the heat-conducting cavity is in direct contact with the first side or the second side of the insulating layer 0142, the insulating layer 0142 and the enclosing surface of the substrate 03 may be enclosed together to form the above-mentioned heat-conducting cavity. It can be understood that the first side of the insulating layer 0142 refers to the side located outside the first side of the insulating layer 0142.

[0060] Combination Figure 2 and Figure 3 Taking the substrate 03 as a temperature equalizing plate as an example, the substrate 03 has a first side wall surface 031 and a second side wall surface 032 relative to each other. In the present invention, the insulating plate 014 can replace the first side wall surface 031 or the second side wall surface 032 of the substrate 03, and directly form a closed heat-conducting cavity with other enclosing surfaces of the substrate 03 through bonding and other processes for heat conduction, thereby achieving direct contact between the insulating layer 0142 and the heat-conducting cavity.

[0061] By directly enclosing the insulating plate 014 with the substrate 03, the advantages of the high thermal conductivity and good temperature uniformity of the substrate 03 can be utilized to quickly conduct the heat generated by the chip 012 when the power semiconductor device 01 is working through the insulating layer 0142 and the substrate 03 and dissipate the heat, and the setting of the insulating layer 0142 can achieve insulation isolation between the chip 012 and the outside world. This combination of the substrate 03 and the insulating plate 014 to form a heat-conducting cavity for the phase-change working medium to conduct heat can further shorten the heat transfer path of the power semiconductor device 01, reduce thermal resistance, enhance the temperature uniformity of the heat dissipation system, and improve the heat dissipation efficiency.

[0062] The chip 012 is used to be arranged on one side of the outer wall of the power semiconductor composed of the insulating plate 014 and the substrate 03, and the phase change medium can quickly conduct heat from the side of the power semiconductor where the chip 012 is arranged to the other side opposite thereto. Specifically, if the heat-conducting cavity is in direct contact with the first side of the insulating layer 0142, the chip 012 is arranged on the enclosed surface opposite to the substrate 03 and the insulating layer 0142; if the heat-conducting cavity is in direct contact with the second side of the insulating layer 0142, the chip 012 can be arranged on the first side of the insulating layer 0142.

[0063] If the heat-conducting cavity is in indirect contact with the first side or the second side of the insulating layer 0142, it means that the enclosed surfaces of the substrate 03 enclose an independent heat-conducting cavity, and the insulating plate 014 is attached to the outer wall of a certain enclosed surface of the heat-conducting cavity, thereby achieving indirect contact with the heat-conducting cavity. In this embodiment, the substrate 03 can be a heat spreader, a heat pipe with multiple cavities, and the like.

[0064] Reference Figure 3As shown in the figure, the utility model can be arranged in the form of stacking the chip 012, the first metal layer 0141, the insulating layer 0142, and the substrate 03 in sequence, or in the form of stacking the chip 012, the substrate 03, the insulating layer 0142, and the first metal layer 0141 in sequence, without affecting the insulation and heat conduction functions of the power semiconductor to the chip 012. It can be understood by those skilled in the art that the positions of the insulating layer 0142 and the first metal layer 0141 can be interchanged, but the preferred method is that the insulating layer 0142 is connected to the substrate 03.

[0065] For ease of description, the following is further described based on a specific implementation scheme in which the chip 012 is arranged on the first side of the insulating layer 0142 and the substrate 03 is arranged on the second side of the insulating layer 0142 (that is, the insulating plate 014 replaces the first side wall surface 031 of the substrate 03 and is arranged opposite to the second side wall surface 032 of the substrate 03, the heat of the chip 012 is first conducted to the insulating layer 0142, and then the phase change medium conducts the heat from the insulating layer 0142 to the second side wall surface 032 of the substrate 03; alternatively, the insulating plate 014 is arranged in contact with the first side wall surface 031 of the substrate 03, the heat of the chip 012 is first conducted to the insulating layer 0142, and then conducted from the insulating layer 0142 to the first side wall surface 031 of the substrate 03, and finally the phase change medium conducts the heat from the first side wall surface 031 of the substrate 03 to the second side wall surface 032 of the substrate 03).

[0066] Furthermore, to facilitate the connection between the insulating plate 014 and the chip 012 , the insulating plate 014 may further include a first metal layer 0141 , which is disposed on a first side of the insulating layer 0142 and can be directly connected to the chip 012 via a connection layer such as solder.

[0067] In a specific embodiment disclosed in the present utility model, each enclosed surface of the substrate 03 encloses an independent heat-conducting cavity, the insulating plate 014 is in indirect contact with the heat-conducting cavity, and the insulating plate 014 further includes a second metal layer 0143, which is disposed between the insulating layer 0142 and the substrate 03, that is, the insulating plate 014 can retain a complete structure, and dissipate heat through the direct bonding of the substrate 03 and the second metal layer 0143. The first metal layer 0141 and the second metal layer 0143 are usually made of copper layers to have good thermal conductivity.

[0068] The second side wall surface 032 (power semiconductor) of the substrate 03 can be cooled directly by air cooling or water cooling or by a heat dissipation component. In addition, a fin structure or a groove structure can be provided on the second side wall surface 032 of the substrate 03 to increase the heat dissipation area and improve the heat dissipation effect.

[0069] It can be understood that, in order to ensure the heat dissipation effect, the insulating plate 014 and the substrate 03, as well as the substrate 03 and the heat dissipation component are all fitted together. In the present invention, the first side and the second side of each component refer to opposite sides. For example, the first metal layer 0141 is arranged on the first side of the insulating layer 0142, and the substrate 03 is arranged on the second side of the insulating layer 0142, which means that the first metal layer 0141 and the substrate 03 are respectively arranged on opposite sides of the insulating layer 0142.

[0070] The size of the substrate 03 can be set according to the needs, as long as it can meet the requirements of welding, force, mechanics, etc. It can be understood that, combined with Figure 3 and Figure 4 The size of the substrate 03 and the size of the insulating layer 0142 can be the same or different. Thus, the substrate 03 and the insulating plate 014 can be arranged in a one-to-one correspondence or a non-one-to-one correspondence. Figure 6 A plurality of insulating plates 014 may be disposed on a substrate 03, or a substrate 03 may cooperate with a plurality of insulating plates 014 to enclose a plurality of heat-conducting cavities, thereby reducing heat dissipation costs and improving heat dissipation efficiency.

[0071] In some embodiments, in combination Figure 7 and Figure 8 An insulating plate 014 can be bonded to one or more substrates 03 or an insulating plate 014 can be enclosed with the substrate 03 to form one or more heat-conducting cavities to adjust the heat dissipation efficiency of the chip 012 according to actual conditions. Each substrate 03 can be directly connected to the surface of the heat sink substrate 041 (heat dissipation component) or embedded in the embedding groove on the first side of the heat sink substrate 041.

[0072] It should be noted that if the direction in which the extension plane of the substrate 03 is defined as the horizontal direction, the direction perpendicular to the extension plane of the substrate 03 is the vertical direction (i.e. Figure 6 The up and down direction shown is the vertical direction), the projection area of ​​the substrate 03 in the vertical direction must be larger than the projection area of ​​the chip 012 in the vertical direction, and the projection of the substrate 03 in the vertical direction coincides with the projection of the chip 012 in the vertical direction, that is, the projection of the substrate 03 in the vertical direction can at least completely cover the projection of the chip 012 in the vertical direction to ensure the heat dissipation effect on the chip 012.

[0073] The heat dissipation system disclosed in the embodiment of the utility model includes the above-mentioned power semiconductor and the heat dissipation component. The heat dissipation component is used to dissipate heat from the power semiconductor. Since it has the above-mentioned structure, it also has the above-mentioned beneficial effects. Other structures can refer to the prior art and will not be repeated here.

[0074] In one embodiment, the heat dissipation assembly includes a heat sink 04, which is disposed on the other side of the power semiconductor opposite to the chip 012. Figure 5 In the structural form of the medium power semiconductor, the heat sink 04 is arranged on the side of the substrate 03 facing away from the insulating plate 014, that is, the second side wall surface 032 of the substrate 03 is connected to the heat sink 04, so that the phase change medium can conduct the heat of the insulating layer 0142 to the heat sink 04, and then dissipate the heat through the heat sink 04. The heat sink 04 can be a fin heat sink and other types, so that the heat dissipation area can be effectively increased through the fin structure to improve the heat dissipation efficiency.

[0075] The power semiconductor (usually the substrate 03) and the heat sink 04 can be connected by means of clamping, welding, screw connection, etc., instead of using thermal interface materials for connection, so as to enhance the heat dissipation capacity of the system. Specifically, the heat sink 04 includes a heat sink substrate 041 and fins 042, the power semiconductor is arranged on the first side of the heat sink substrate 041, and the fins 042 are arranged on the second side of the heat sink substrate 041.

[0076] The substrate 03 may be specifically Figure 4 The method shown is directly attached to the surface of the radiator substrate 041, or as Figure 5 In the method shown, a groove is opened on the first side of the heat sink substrate 041, and the substrate 03 is embedded in the groove. Compared with the solution of directly attaching the substrate 03 to the surface of the heat sink substrate 041, this solution can transfer the heat generated by the chip 012 during operation to the fins 042 more quickly, thereby improving the heat dissipation efficiency of the system and facilitating installation.

[0077] The substrate 03 can be an ordinary temperature averaging board or an insulating temperature averaging board. The ordinary temperature averaging board has stronger thermal conductivity, and the shell of the insulating temperature averaging board is an insulating shell with certain insulation performance, which can further improve the safety of power semiconductors.

[0078] In a specific embodiment disclosed in the present utility model, the heat dissipation component includes a heat exchange device and a heat sink 09 (for example, it can be implemented as a liquid cooling plate or an evaporator), the power semiconductor (substrate 03) is arranged on the heat sink 09, and can conduct heat to the heat sink 09 through direct contact with the heat sink 09, the heat sink 09 has a cooling cavity 091, the cooling cavity 091 is filled with a cooling medium, and the cooling cavity 091 forms a cooling circuit with the heat exchange device through a circulation pipeline 05, the cooling circuit can be used for the circulation of the cooling medium to transfer heat from the heat sink 09 to the heat exchange device, and the heat exchange device can exchange heat with the external environment.

[0079] Specifically, the types of heat exchange equipment vary depending on the type of cooling medium. Fig. 9When the cooling medium is water (water can be used as a single-phase cooling medium or a two-phase cooling medium according to the actual operating temperature), oil, some liquid refrigerants and other non-phase change cooling media, the heat exchange device is a heat exchanger 07, and the heat sink 09 and the heat exchanger 07 form a cooling circuit through the circulation pipeline 05, and the circulation pipeline 05 is provided with a circulation pump 06, which can drive the cooling medium to circulate between the heat sink 09 and the heat exchanger 07 and transfer the heat from the heat sink 09 to the heat exchanger 07. When the power semiconductor device 01 is working, the chip 012 generates heat, and the heat is transferred to the heat sink 09 through the power semiconductor. After the cooling medium absorbs the heat, it transfers the heat to the external environment through the heat exchanger 07.

[0080] Combination Fig.10 When the cooling medium is a phase-changing cooling medium, the heat exchange device corresponds to the condenser 08. The heat sink 09 and the condenser 08 form a cooling loop through the circulation pipeline 05. In the vertical direction, the condenser 08 is arranged above the heat sink 09. In the cooling loop, the radiator 04 acts as an evaporator. The cooling medium absorbs the heat of the chip 012 at the radiator 04, so that the cooling medium changes from a liquid phase to a gas phase. Based on the pressure difference, the gas phase cooling medium enters the condenser 08 along the cooling pipeline 05, releases heat and condenses into a liquid phase in the condenser 08, and flows back to the radiator 04 through the cooling pipeline 05 by gravity to realize circulation. Since the cooling medium itself undergoes a phase change during this process, an automatic drive cycle of the cooling medium can be formed through the height difference between the condenser 08 and the heat sink 09 without the need to set up additional driving components.

[0081] It can be understood that the present embodiment does not impose any limitation on the height difference between the condenser 08 and the heat sink 09, as long as the automatic heat exchange cycle of the cooling medium can be satisfied.

[0082] In addition, the heat dissipation component can also be a siphon heat sink or other structures, which will not be described in detail here.

[0083] Combination Figure 11-13 The utility model also discloses a power conversion device, which includes a housing 10 and the above-mentioned power semiconductor or the above-mentioned heat dissipation system. The power semiconductor can be arranged in the housing 10 in a detachable manner by means of threaded connection, pin connection, snap connection or bonding. The housing 10 can play a protective function for the power semiconductor. Since it has the above-mentioned power semiconductor or heat dissipation system, it also has the above-mentioned beneficial effects, which will not be repeated here.

[0084] In order to facilitate the heat dissipation of the substrate 03 through the heat dissipation component, the housing 10 is provided with a first cavity and a second cavity, the power semiconductor is provided in the first cavity, the heat dissipation component is provided in the second cavity, and a partition is provided between the first cavity and the second cavity, and the power semiconductor and the heat dissipation component can be indirectly contacted through the partition for heat dissipation. Alternatively, a window (heat dissipation hole) is provided on the partition, and the power semiconductor can directly contact the heat dissipation component at the window and dissipate heat, with less thermal resistance and higher thermal conductivity efficiency.

[0085] In order to protect the heat dissipation component, the power conversion device further includes a cover 14, which is protectively arranged at the heat dissipation component, and an air inlet 16 and an air outlet 15 are formed between the cover 14 and the housing 10, and the air inlet 16 and the air outlet 15 are both opposite to the heat dissipation component. Ambient wind can enter through the air inlet 16 and exit through the air outlet 15 to bring the heat on the heat dissipation component to the environment, thereby completing the heat dissipation process.

[0086] Specifically, the configuration of the cover 14 varies according to the different heat dissipation components. Fig.11 When the heat dissipation assembly includes a heat sink 04, the air inlet 16 and the air outlet 15 can be directly opposite to the fins 042 of the heat sink 04, so that the ambient wind can directly take away the heat of the fins 042. Fig.12 When the heat dissipation assembly includes a heat dissipation plate 09 and a heat exchanger 07, the air inlet 16 and the air outlet 15 can at least directly face the heat exchanger 07, so that the ambient wind can directly take away the heat of the heat exchanger 07. Fig.12 When the heat dissipation component is a heat dissipation plate 09 and a condenser 08, the air inlet 16 and the air outlet 15 are directly opposite to the condenser 08, so that the ambient wind can directly take away the heat of the condenser 08. Other arrangements of the heat dissipation component will not be described here.

[0087] In addition, electronic components such as inductor 11, other heating components 12, and circuit board 13 may be arranged in the housing 10. The housing 10 can prevent the electronic components from being exposed to the air, slow down the aging of the device, and extend the service life of the device. The electronic components, heat dissipation components, cover 14 and housing 10 are all connected in a detachable manner, and this embodiment is not limited to this.

[0088] The above description of the disclosed embodiments enables professionals and technicians in the field to implement or use the utility model. Various modifications to these embodiments will be obvious to professionals and technicians in the field, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the utility model. The specific technical means in some embodiments can be combined in part or in whole into another embodiment without being explicitly excluded by another embodiment. Therefore, the utility model will not be limited to the embodiments shown in this article, but will conform to the widest range consistent with the principles and novel features disclosed herein.

Claims

1. A power semiconductor, characterized in that: include: An insulating plate (014) comprising an insulating layer (0142), wherein the chip (012) is arranged on a first side of the insulating layer (0142); The substrate (03) has a plurality of enclosed surfaces, the enclosed surfaces enclose a heat-conducting cavity, a phase-change working medium for heat conduction is arranged in the heat-conducting cavity, and the heat-conducting cavity is in direct or indirect contact with the first side surface or the second side surface of the insulating layer (0142).

2. The power semiconductor according to claim 1, characterized in that The heat-conducting cavity is in direct contact with the first side surface or the second side surface of the insulating layer (0142), and the insulating layer (0142) and the enclosing surface are jointly enclosed to form the heat-conducting cavity.

3. The power semiconductor according to claim 2, characterized in that The heat-conducting cavity is in direct contact with a first side surface of the insulating layer (0142), and the chip (012) is arranged on an enclosed surface of the substrate (03) and the insulating layer (0142) opposite to each other; or, The heat conduction cavity is in direct contact with the second side surface of the insulating layer (0142), and the chip (012) is arranged on the first side surface of the insulating layer (0142).

4. The power semiconductor according to claim 1, characterized in that The heat-conducting cavity is in indirect contact with the first side surface or the second side surface of the insulating layer (0142), and each of the enclosed surfaces encloses to form an independent heat-conducting cavity.

5. The power semiconductor according to claim 4, characterized in that The insulating plate (014) comprises a second metal layer (0143), wherein the second metal layer (0143) is arranged between the insulating layer (0142) and the substrate (03).

6. The power semiconductor according to any one of claims 1 to 5, characterized in that: The insulating plate (014) comprises a first metal layer (0141) arranged on a first side of the insulating layer (0142), and the chip (012) is used to be arranged on the first metal layer (0141).

7. The power semiconductor according to any one of claims 1 to 5, characterized in that: A direction perpendicular to the extension plane of the substrate (03) is a vertical direction, and a projection area of ​​the substrate (03) in the vertical direction is larger than a projection area of ​​the chip (012) in the vertical direction; The projection of the substrate (03) in the vertical direction coincides with the projection of the chip (012) in the vertical direction.

8. The power semiconductor according to any one of claims 1 to 5, characterized in that: One insulating plate (014) corresponds to one or more substrates (03); or, One substrate (03) corresponds to one or more insulating plates (014).

9. A heat dissipation system, characterized in that: It comprises a power semiconductor and a heat dissipation component as described in any one of claims 1 to 8, wherein the heat dissipation component is used to dissipate heat from the power semiconductor.

10. The heat dissipation system according to claim 9, characterized in that: The heat dissipation component comprises a heat sink (04), and the power semiconductor is arranged on the heat sink (04).

11. The heat dissipation system according to claim 10, characterized in that: The power semiconductor is bonded to the heat sink (04); or, The heat sink (04) is provided with an embedding groove, and the power semiconductor is embedded in the embedding groove.

12. The heat dissipation system according to claim 9, characterized in that: The heat dissipation component comprises a heat exchange device and a heat sink (09), the power semiconductor being arranged on the heat sink (09), the heat sink (09) having a cooling cavity (091), the cooling cavity (091) being filled with a cooling medium, and the cooling cavity (091) forming a cooling circuit with the heat exchange device via a circulation pipeline (05), the cooling circuit being capable of transferring heat from the heat sink (09) to the heat exchange device through the circulation of the cooling medium.

13. The heat dissipation system according to claim 12, characterized in that: The cooling medium is a non-phase-changing cooling medium, and the heat exchange device is a heat exchanger (07); The heat sink (09) and the heat exchanger (07) form the cooling circuit via the circulation pipeline (05), and a circulation pump (06) is provided on the circulation pipeline (05). The circulation pump (06) is capable of driving the cooling medium to circulate and transfer heat from the heat sink (09) to the heat exchanger (07).

14. The heat dissipation system according to claim 12, characterized in that: The cooling medium is a phase-changing cooling medium, and the heat exchange device is a condenser (08); The heat sink (09) and the condenser (08) form the cooling circuit through the circulation pipeline (05). In the vertical direction, the condenser (08) is arranged above the heat sink (09). The cooling medium absorbs heat at the heat sink (09) and is converted into a gas phase and enters the condenser (08). It releases heat in the condenser (08) and is condensed into a liquid phase and flows back to the cooling cavity (091), forming a cycle.

15. A power conversion device, characterized in that: comprising a housing (10) and a power semiconductor according to any one of claims 1 to 8, wherein the power semiconductor is arranged in the housing (10); or, It comprises a housing (10) and a heat dissipation system according to any one of claims 9 to 14, wherein the power semiconductor is arranged in the housing (10).

16. The power conversion device according to claim 15, characterized in that: The housing (10) is provided with a first cavity and a second cavity, a partition is provided between the first cavity and the second cavity, the power semiconductor is provided in the first cavity, the heat dissipation component is provided in the second cavity, and the power semiconductor and the heat dissipation component are indirectly cooled through the partition, or directly contacted with windows on the partition for heat dissipation.

17. The power conversion device according to claim 15, characterized in that: The invention also comprises a cover body (14), wherein the cover body (14) is arranged on the shell (10) and is protected outside the heat dissipation component, and an air inlet (16) and an air outlet (15) are formed between the cover body and the shell (10), and the air inlet (16) and the air outlet (15) are both opposite to the heat dissipation component.

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