An IGBT chip resistant to high temperature and high humidity environment

Abstract

The utility model provides an IGBT chip resistant to high temperature and high humidity environment, and relates to the technical field of IGBT chips, including an IGBT chip, the IGBT chip is installed in a lower installation cavity opened at the lower part of an outer shell, and a group of side heat dissipation structures are arranged at the left and right parts of the lower end surface of the IGBT chip, the front and rear parts of the IGBT chip are connected with three groups of connection ends, and the other end of the connection end is provided with three groups of wiring terminals, and the upper end of the wiring terminal is covered with an upper protective cover, the top of the outer shell is provided with a top seat, and an upper groove is opened in the middle of the top seat, and a through opening is opened in the middle of the upper groove, and the upper groove and the lower installation cavity are connected, and an upper heat dissipation fin assembly is installed in the upper groove, and the middle part of the lower end surface of the upper heat dissipation fin assembly is just in contact with the upper end surface of the IGBT chip. The utility model has a strong and firm structure, is pressure-resistant and wear-resistant, has a large heat dissipation and ventilation area, is helpful to quickly reduce the temperature, and is more resistant to high temperature and high humidity and corrosion, and is safer and more durable.

Description

Technical Field

[0001] The utility model relates to the technical field of IGBT chips, in particular to an IGBT chip resistant to high temperature and high humidity environments. Background Art

[0002] The power chip is a power management chip. It is a chip that is responsible for the conversion, distribution, detection and other power management of electric energy in the electronic equipment system. It is mainly responsible for identifying the CPU power supply amplitude, generating corresponding short-term waves, and driving the subsequent circuit to output power. The application range of power chips is very wide. The development of power chips is of great significance to improving the performance of the whole machine. The choice of power chips is directly related to the needs of the system.

[0003] In the specification of a durable high-temperature resistant power chip in the prior art (publication number CN217062057U), it is mentioned that "the front and back sides of the body are fixedly provided with straight plug-in legs, both sides of the body are provided with heat dissipation holes, the top of the body is provided with ventilation holes, and the top of the body is fixedly provided with a support plate; the inner cavity of the support plate is fixedly provided with a sponge column, the top of the support plate is provided with a heat dissipation port, the inner wall of the heat dissipation port is fixedly provided with a heat dissipation plate, the bottom of the body is fixedly provided with a rubber sleeve, and the outer wall of the rubber sleeve is fixedly provided with a limiting block", but the chip in the prior art is easily subjected to pressing wear and tear, and is not resistant to high humidity erosion, which affects its service life, and the device is not strong and durable. Utility Model Content

[0004] In order to overcome the defects of the prior art, an IGBT chip resistant to high temperature and high humidity environment is provided to solve the problems that the chip in the prior art is easily subjected to compression wear, is not resistant to high humidity erosion, affects its service life, and is not strong and durable.

[0005] To achieve the above-mentioned purpose, an IGBT chip resistant to high temperature and high humidity environment is provided, comprising an IGBT chip, wherein the IGBT chip is installed in a lower installation cavity opened in the lower part of an outer shell, and a group of side heat dissipation structures are arranged on the left and right parts of the lower end surface of the IGBT chip, the front and rear parts of the IGBT chip are connected with three groups of connection ends, and the other end of the connection end is provided with three groups of wiring terminals, and the upper end of the wiring terminal is covered with an upper protective cover, the outer shell is made of silicon carbide, and the IGBT chip and the outer shell, and the IGBT chip and the side heat dissipation structure are all separated and connected.

[0006] Furthermore, a top seat is arranged on the top of the outer shell, an upper groove is opened in the middle of the top seat, a through opening is opened in the middle of the upper groove, and the upper groove is communicated with the lower installation cavity.

[0007] Furthermore, an upper heat dissipation fin assembly is installed in the upper groove, and the middle portion of the lower end surface of the upper heat dissipation fin assembly is arranged to be in contact with the upper end surface of the IGBT chip.

[0008] Furthermore, the front and rear parts of the top seat are each provided with three groups of screw holes, and a group of fastening screws are installed in each group of screw holes, and the lower part of the fastening screws is screwed into the corresponding screw holes on the IGBT chip through threads.

[0009] Furthermore, a side heat dissipation fin group is arranged on one side of the side heat dissipation structure, and a plurality of groups of heat transfer aluminum sheets are arranged on the other side of the side heat dissipation structure, and the heat transfer aluminum sheets are closely attached to the lower end surface of the IGBT chip.

[0010] The beneficial effects of the utility model are:

[0011] 1. The utility model uses the upper heat dissipation fin assembly and the side heat dissipation structure to dissipate heat over a large area, thereby evenly transferring the heat on the IGBT chip to prevent the operating temperature of the IGBT chip from being too high.

[0012] 2. The configuration of the outer shell in the utility model facilitates the installation of the IGBT chip in the lower installation cavity, which not only provides stable and firm installation, but also provides safer and more reliable protection, and is also easy to disassemble.

[0013] 3. The side heat dissipation structures installed on the left and right parts of the lower end surface of the IGBT chip in the utility model are positioned and installed, which not only increases the contact area with the IGBT chip, but also the heat transfer aluminum sheet transfers heat to the side heat dissipation fin groups on both sides, which is faster and more convenient, and also makes it easy to remove the side heat dissipation structure from the IGBT chip, which is convenient for maintenance or replacement.

[0014] 4. At the same time, the outer shell is made of silicon carbide, which is not only strong and firm, but also more resistant to high temperature and moisture corrosion. The heat dissipation structure on the opposite side and the IGBT chip protection are safer and more reliable, making it more durable. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 This is a rendering of an embodiment of the utility model;

[0016] Figure 2 It is a top view schematic diagram of an embodiment of the utility model;

[0017] Figure 3 A bottom view schematic diagram of an embodiment of the utility model;

[0018] Figure 4 It is a front view schematic diagram of an embodiment of the utility model;

[0019] Figure 5 It is a schematic diagram of the side heat dissipation structure of an embodiment of the utility model.

[0020] In the figure: 1. outer shell; 10. top seat; 11. upper groove; 12. upper heat sink fin assembly; 13. lower mounting cavity; 14. screw hole; 15. fastening screw; 2. side heat dissipation structure; 20. side heat sink fin assembly; 21. heat transfer aluminum sheet; 3. IGBT chip; 30. connection end; 31. upper protective cover; 32. wiring terminal. DETAILED DESCRIPTION

[0021] In order to make the technical problems, technical solutions and beneficial effects to be solved by the utility model clearer, the utility model is further described in detail in combination with the accompanying drawings and embodiments. The specific embodiments described herein are only used to explain the utility model, and are not used to limit the utility model. Specific details such as specific system structures and technologies are proposed in order to more thoroughly understand the embodiments of the utility model. The described embodiments are part of the embodiments of the present disclosure, rather than all of the embodiments. However, it should be clear to those skilled in the art that the utility model can also be implemented in other embodiments without these specific details. Based on the embodiments in the present disclosure, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present disclosure.

[0022] The specific implementation of the utility model is described in detail below with reference to the accompanying drawings.

[0023] Figure 1 The effect diagram of the embodiment of the utility model is as follows: Figure 2 A schematic top view of an embodiment of the utility model, Figure 3 A bottom view schematic diagram of an embodiment of the utility model, Figure 4 A schematic front view of an embodiment of the utility model and Figure 5 It is a schematic diagram of the side heat dissipation structure of an embodiment of the utility model.

[0024] Reference Figures 1 to 5 As shown, the utility model provides an IGBT chip resistant to high temperature and high humidity environment, including an IGBT chip 3, the IGBT chip 3 is installed in a lower installation cavity 13 opened in the lower part of the outer shell 1, and a group of side heat dissipation structures 2 are arranged on the left and right parts of the lower end surface of the IGBT chip 3, the front and rear parts of the IGBT chip 3 are connected with three groups of connection ends 30, and the other end of the connection end 30 is provided with three groups of wiring terminals 32, and the upper end of the wiring terminal 32 is covered with an upper protective cover 31.

[0025] In this embodiment, a top seat 10 is provided on the top of the outer shell 1, and an upper groove 11 is opened in the middle of the top seat 10, and a through opening is opened in the middle of the upper groove 11, and the upper groove 11 is connected to the lower mounting cavity 13, and an upper heat sink fin assembly 12 is installed in the upper groove 11, and the middle of the lower end surface of the upper heat sink fin assembly 12 is just in contact with the upper end surface of the IGBT chip 3.

[0026] As a preferred embodiment, the utility model performs large-area heat dissipation through the upper heat dissipation fin assembly 12 and the side heat dissipation structure 2, so as to evenly transfer the heat on the IGBT chip 3 to prevent the operating temperature of the IGBT chip 3 from being too high.

[0027] In this embodiment, three groups of screw holes 14 are provided on the front and rear parts of the top seat 10 , and a group of fastening screws 15 are installed in each group of screw holes 14 . The lower part of the fastening screws 15 is screwed into the corresponding screw holes on the IGBT chip 3 through threads.

[0028] As a preferred embodiment, the configuration of the outer shell 1 in the utility model facilitates the installation of the IGBT chip 3 in the lower installation cavity 13, which not only ensures stable and firm installation, but also provides safer and more reliable protection, and is also easy to disassemble.

[0029] In this embodiment, a side heat dissipation fin group 20 is provided on one side of the side heat dissipation structure 2, and a plurality of groups of heat transfer aluminum sheets 21 are provided on the other side of the side heat dissipation structure 2, and the heat transfer aluminum sheets 21 are tightly attached to the lower end surface of the IGBT chip 3; the outer shell 1 is made of silicon carbide, and the IGBT chip 3 and the outer shell 1, and the IGBT chip 3 and the side heat dissipation structure 2 are all split and connected.

[0030] As a preferred embodiment, the side heat dissipation structure 2 installed on the left and right parts of the lower end surface of the IGBT chip 3 in the utility model is positioned and installed, which not only increases the contact area with the IGBT chip 3, but also the heat transfer aluminum sheet 21 transfers heat to the side heat dissipation fin group 20 on both sides, which is faster and more convenient, and also makes it easy to remove the side heat dissipation structure 2 from the IGBT chip 3 for maintenance or replacement.

[0031] At the same time, the outer shell 1 is made of silicon carbide, which is not only strong and firm, but also more resistant to high temperature and moisture corrosion. The protection of the heat dissipation structure 2 and the IGBT chip 3 on the opposite side is safer and more reliable, making it more durable.

[0032] The utility model can effectively solve the problems in the prior art that the chip is easily subjected to compression wear, is not resistant to high humidity erosion, affects its service life, and is not strong and durable. The utility model has a strong and firm structure, is resistant to pressure and wear, has a large heat dissipation and ventilation area, helps to quickly reduce the temperature, and is more resistant to high temperature and high humidity and corrosion, and is safer and durable.

[0033] The above embodiments are used to explain the present invention rather than to limit the present invention. Any modifications and changes made to the present invention within the spirit of the present invention and the scope of the claims for protection shall be included in the protection scope of the present invention.

Claims

1. An IGBT chip resistant to high temperature and high humidity environment, characterized in that: The invention comprises an IGBT chip (3), wherein the IGBT chip (3) is mounted in a lower mounting cavity (13) provided at the lower part of an outer shell (1), and a group of side heat dissipation structures (2) are arranged at both the left and right parts of the lower end surface of the IGBT chip (3), and the front and rear parts of the IGBT chip (3) are connected to three groups of connection ends (30), and the other ends of the connection ends (30) are provided with three groups of connection terminals (32), and the upper ends of the connection terminals (32) are covered with an upper protective cover (31), and the outer shell (1) is made of silicon carbide, and the IGBT chip (3) and the outer shell (1), and the IGBT chip (3) and the side heat dissipation structures (2) are all separated and connected.

2. The IGBT chip resistant to high temperature and high humidity environment according to claim 1, characterized in that: A top seat (10) is arranged at the top of the outer shell (1), an upper groove (11) is opened in the middle of the top seat (10), a through opening is opened in the middle of the upper groove (11), and the upper groove (11) is communicated with the lower installation cavity (13).

3. The IGBT chip resistant to high temperature and high humidity environment according to claim 2, characterized in that: An upper heat dissipation fin assembly (12) is installed in the upper groove (11), and the middle portion of the lower end surface of the upper heat dissipation fin assembly (12) is arranged to be in contact with the upper end surface of the IGBT chip (3).

4. The IGBT chip resistant to high temperature and high humidity environment according to claim 2, characterized in that: The front and rear parts of the top seat (10) are each provided with three groups of screw holes (14), and a group of fastening screws (15) are installed in each group of screw holes (14), and the lower part of the fastening screw (15) is screwed into the corresponding screw hole on the IGBT chip (3) through a thread.

5. The IGBT chip resistant to high temperature and high humidity environment according to claim 1, characterized in that: A side heat dissipation fin group (20) is provided on one side of the side heat dissipation structure (2), and a plurality of groups of heat transfer aluminum sheets (21) are provided on the other side of the side heat dissipation structure (2), and the heat transfer aluminum sheets (21) are closely attached to the lower end surface of the IGBT chip (3).

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