A multi-layer stacked SiP down-conversion module

Abstract

The utility model provides a multi-layer stacked SiP down-conversion module, comprising a SiP package tube shell, a lower circuit board, a middle circuit board and an upper circuit board arranged inside the SiP package tube shell, wherein the SiP package tube shell comprises a ceramic substrate at the bottom, a surrounding frame around the ceramic substrate and a cover plate at the upper part of the surrounding frame; the lower circuit board is mounted on the ceramic substrate, the middle circuit board is mounted on the lower circuit board through BGA solder balls, and the upper circuit board is mounted on the middle circuit board through BGA solder balls; the radio frequency, primary mixing and one intermediate frequency circuit in the superheterodyne secondary frequency conversion circuit are placed on the lower circuit board, the one intermediate frequency circuit, secondary mixing and two intermediate frequency circuits in the superheterodyne secondary frequency conversion circuit are placed on the middle circuit board, and the positive and negative power supply voltage stabilization circuits are placed on the upper circuit board. The utility model realizes a miniaturized and lightweight multi-layer stacked SiP down-conversion module.

Description

Technical Field

[0001] The utility model relates to the technical field of microelectronics, in particular to a multi-layer stacked SiP down-conversion module. Background Art

[0002] The down-conversion module is the core component of the radar warning receiver of electronic warfare equipment. It is responsible for filtering, down-converting, amplifying and processing the enemy radar signal received by the antenna and transmitting it to the signal processor. Radar warning receivers usually face non-cooperative enemy radar signals with wide airspace and wide frequency bandwidth. It is necessary to process the complex and changeable electromagnetic signals through the down-conversion module with extremely high difficulty to obtain low noise, low spurious, high gain and large dynamic effects, thereby greatly improving the sensitivity of electronic reconnaissance, effectively detecting the enemy radar position and achieving excellent technical indicators. The traditional down-conversion module adopts a two-dimensional plane assembly method, which is large in size and weight. With the development of a new generation of electronic warfare platforms such as intelligent drones and decoy jammers, the installation space is greatly limited. The traditional two-dimensional plane assembly down-conversion module cannot meet the requirements of miniaturization and lightweight in size and weight. The technical path is transformed from the traditional two-dimensional brick-type integration to the tile-type three-dimensional integration. Therefore, it is necessary to develop a multi-layer stacked SiP down-conversion module. Utility Model Content

[0003] To solve the above problems, the utility model discloses a multi-layer stacked SiP down-conversion module, which can place the superheterodyne secondary frequency conversion circuit and the power supply voltage stabilization circuit on the lower circuit board, the middle circuit board and the upper circuit board respectively using the multi-layer stacked SiP technology, thereby realizing a miniaturized and lightweight multi-layer stacked SiP down-conversion module.

[0004] In order to achieve the above object, the technical solution of the utility model is as follows:

[0005] A multi-layer stacked SiP down-conversion module comprises a SiP package shell, a lower circuit board, a middle circuit board and an upper circuit board, and a cover plate arranged inside the SiP package shell, wherein the SiP package shell comprises a ceramic substrate at the bottom, a surrounding frame around the ceramic substrate and a cover plate located on the upper part of the surrounding frame; the lower circuit board is mounted on the ceramic substrate by solder, the middle circuit board is mounted on the lower circuit board by BGA solder balls, and the upper circuit board is mounted on the middle circuit board by BGA solder balls.

[0006] The lower circuit board is provided with a radio frequency, a primary mixer and an intermediate frequency circuit, the radio frequency signal is interconnected with the SiP package shell through a gold tape, and the power signal and the control signal are interconnected with the SiP package shell through a gold wire; an intermediate frequency, a secondary mixer and a second intermediate frequency circuit are placed on the middle circuit board, an intermediate frequency signal is interconnected with the lower circuit board through a coaxial circuit composed of 5 BGA solder balls, and the power signal and the control signal are interconnected with the lower circuit board through BGA solder balls; the upper circuit board is provided with a positive and negative power supply voltage stabilization circuit, and the power supply signal is interconnected with the middle circuit board through a BGA solder ball.

[0007] Furthermore, the RF circuit includes an RF amplifier A, an RF digitally controlled attenuator, an RF switch filter group, an RF amplifier B, and an RF attenuator connected in sequence; the primary mixing circuit includes a first-stage mixer; and the intermediate frequency circuit includes an intermediate frequency attenuator A, an intermediate frequency filter, and an intermediate frequency amplifier connected in sequence. The RF amplifier A, the RF digitally controlled attenuator, the RF switch filter group, the RF amplifier B, the RF attenuator, the first-stage mixer, an intermediate frequency attenuator A, an intermediate frequency filter, and an intermediate frequency amplifier are bonded to the lower circuit board with conductive adhesive, and the chips are interconnected with gold wires in sequence.

[0008] Further, the first intermediate frequency circuit includes an intermediate frequency attenuator B; the secondary mixing circuit includes a second-stage mixer; the second intermediate frequency circuit includes a second intermediate frequency attenuator A, a second intermediate frequency filter A, a second intermediate frequency amplifier A, a second intermediate frequency digitally controlled attenuator, a second intermediate frequency amplifier B, a second intermediate frequency filter 2, and a second intermediate frequency attenuator B connected in sequence. The first intermediate frequency attenuator B, the second-stage mixer, the second intermediate frequency attenuator A, the second intermediate frequency filter A, the second intermediate frequency amplifier A, the second intermediate frequency digitally controlled attenuator, the second intermediate frequency amplifier B, the second intermediate frequency filter B, and the second intermediate frequency attenuator B are bonded to the middle-layer circuit board with conductive adhesive, and the chips are interconnected with gold wires in sequence.

[0009] Further, the positive power supply voltage stabilization circuit includes a decoupling capacitor A, a decoupling capacitor B, a positive voltage regulator, a decoupling capacitor C, and a decoupling capacitor D connected in sequence; the negative power supply voltage stabilization circuit includes a decoupling capacitor E, a decoupling capacitor F, a negative voltage regulator, a decoupling capacitor G, and a decoupling capacitor H connected in sequence. The decoupling capacitor A, the decoupling capacitor B, the positive voltage regulator, the decoupling capacitor C, the decoupling capacitor D, the decoupling capacitor E, the decoupling capacitor F, the negative voltage regulator, the decoupling capacitor G, and the decoupling capacitor H are soldered to the upper circuit board using a reflow soldering process.

[0010] Furthermore, the assembled middle-layer circuit board is soldered onto the corresponding pads of the lower-layer circuit board through BGA solder balls.

[0011] Furthermore, the assembled upper circuit board is soldered to the corresponding pads of the middle circuit board through BGA solder balls.

[0012] Furthermore, the cover plate is welded on the SiP packaging shell by parallel seam welding.

[0013] The beneficial effects of the utility model are:

[0014] The utility model provides a multi-layer stacked SiP down-conversion module, which places high-frequency circuits such as radio frequency, primary mixing and an intermediate frequency circuit on the lower circuit board, reduces the transmission path of high-frequency signals, and can improve the performance indicators such as noise coefficient, standing wave ratio, and gain flatness of the SiP down-conversion module; places the lower-frequency intermediate frequency, secondary mixing and second intermediate frequency circuits on the middle circuit board, and the lower-frequency intermediate frequency signal is interconnected with the lower circuit board through a coaxial circuit composed of 5 BGA solder balls, which can reduce signal transmission loss; and places the power supply voltage stabilization circuit on the upper circuit board, which can fully utilize the upper space and increase the heat dissipation space of the power supply circuit. The BGA solder balls used in the SiP down-conversion module are arranged in an array, and a part of the BGA solder balls transmit the corresponding radio frequency signals, power signals and control signals, and the remaining BGA solder balls are connected to the ground planes of the upper and lower circuit boards to form a radio frequency shielding cavity, so that the electromagnetic compatibility of the module is better. The SiP down-conversion module uses parallel seam welding to achieve airtight packaging, which further improves the reliability of the module. The three-layer circuit boards of the SiP down-conversion module are stacked three-dimensionally through BGA solder balls to form a three-dimensional layout of the circuit, which reduces the size and weight of the module and solves the problem of large size and heavy weight of the traditional two-dimensional planar assembled down-conversion module. It is very suitable for the needs of new-generation intelligent drones, decoy jammers and other electronic warfare platforms. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a structural schematic diagram of the utility model;

[0016] Figure 2 The utility model is a superheterodyne secondary frequency conversion circuit diagram. DETAILED DESCRIPTION

[0017] In order to make the purpose, technical solution and advantages of the utility model more clear, the features and performance of the utility model are described in detail below with reference to the accompanying drawings.

[0018] like Figure 1As shown, a multi-layer stacked SiP down-conversion module of the present embodiment includes a SiP packaging tube shell 1, a lower circuit board 2, a middle circuit board 3 and an upper circuit board 4, wherein the SiP packaging tube shell 1 includes a ceramic substrate 11, a surrounding frame 12 and a cover plate 13; the lower circuit board 2 is mounted on the ceramic substrate 1, the middle circuit board 3 is mounted on the lower circuit board 2 through BGA solder balls 5, the upper circuit board 4 is mounted on the middle circuit board 3 through BGA solder balls 5, and the cover plate 13 is welded on the surrounding frame 12.

[0019] The lower circuit board 2 is provided with a radio frequency, a primary mixer and an intermediate frequency circuit, the radio frequency signal is interconnected with the SiP package shell through a gold tape, and the power signal and the control signal are interconnected with the SiP package shell through a gold wire; an intermediate frequency, a secondary mixer and a second intermediate frequency circuit are placed on the middle circuit board, an intermediate frequency signal is interconnected with the lower circuit board through a coaxial circuit composed of 5 BGA solder balls, and the power signal and the control signal are interconnected with the lower circuit board through BGA solder balls; a positive power supply voltage stabilization circuit and a negative power supply voltage stabilization circuit are placed on the upper circuit board, and the power signal is interconnected with the middle circuit board through BGA solder balls.

[0020] The lower circuit board 2 of this embodiment is welded to the SiP packaging shell 1 by welding.

[0021] The RF, primary mixing and intermediate frequency circuits placed on the lower circuit board 2 of this embodiment include an RF amplifier A61, an RF digitally controlled attenuator 62, an RF switch filter group 63, an RF amplifier B64, an RF attenuator 65, a first-stage mixer 66, an intermediate frequency attenuator A67, an intermediate frequency filter 68, and an intermediate frequency amplifier 69. The chip is bonded to the lower circuit board 2 with conductive glue, and the chips are interconnected with gold wires in sequence.

[0022] An intermediate frequency, secondary mixing and second intermediate frequency circuits are placed on the middle-layer circuit board 3 of the present embodiment, including an intermediate frequency attenuator B71, a second mixer 72, a second intermediate frequency attenuator A73, a second intermediate frequency filter A74, a second intermediate frequency amplifier A75, a second intermediate frequency digitally controlled attenuator 76, a second intermediate frequency amplifier B77, a second intermediate frequency filter B78, and a second intermediate frequency attenuator B79. The chip is bonded to the lower-layer circuit board 3 with conductive glue, and the chips are interconnected with gold wires in sequence.

[0023] The positive and negative power supply voltage stabilizing circuits are placed on the upper circuit board 4 of this embodiment, including decoupling capacitor A80, decoupling capacitor B81, positive power regulator 82, decoupling capacitor C83, decoupling capacitor D84, decoupling capacitor E85, decoupling capacitor F86, negative power regulator 87, decoupling capacitor G88, and decoupling capacitor H89. The devices are soldered to the upper circuit board using a reflow soldering process.

[0024] In this embodiment, the assembled middle-layer circuit board 3 is soldered to the corresponding pads of the lower-layer circuit board 2 through BGA solder balls.

[0025] In this embodiment, the assembled upper circuit board 4 is soldered to the corresponding pads of the middle circuit board 3 through BGA solder balls.

[0026] The cover plate 13 of the present embodiment is welded on the SiP packaging tube shell 1 by parallel seam welding.

[0027] The utility model discloses a multi-layer stacked SiP down-conversion module, which adopts a three-layer stacking technology solution to vertically interconnect a superheterodyne secondary frequency conversion circuit and a voltage-stabilizing power supply circuit through BGA solder balls to form a three-dimensional layout of the circuit, thereby reducing the volume and weight of the module. The module adopts an airtight packaging technology to further improve the reliability of the module, and is very suitable for the needs of new-generation intelligent UAVs, decoy jammers and other electronic warfare platforms.

[0028] The above descriptions are merely embodiments of the present invention and are not intended to limit the patent scope of the present invention. Any equivalent structure or equivalent process transformation made using the contents of the present invention specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present invention.

Claims

1. A multi-layer stacked SiP down-conversion module, characterized in that: The invention comprises a SiP package tube shell (1), a lower circuit board (2), a middle circuit board (3) and an upper circuit board (4) arranged in the SiP package tube shell (1), wherein the SiP package tube shell (1) comprises a ceramic substrate (11) located at the bottom, a surrounding frame (12) located around the ceramic substrate (11) and a cover plate (13) located on the upper part of the surrounding frame (12); the lower circuit board (2) is mounted on the ceramic substrate (11), the middle circuit board (3) is mounted on the lower circuit board (2) via a BGA solder ball (5), and the upper circuit board (4) is mounted on the middle circuit board (3) via a BGA solder ball (5); the radio frequency, primary mixing and first intermediate frequency circuits (6) in a superheterodyne secondary frequency conversion circuit are placed on the lower circuit board (2), the first intermediate frequency, secondary mixing and second intermediate frequency circuits (7) in the superheterodyne secondary frequency conversion circuit are placed on the middle circuit board (3), and the positive and negative power supply voltage stabilization circuits (8) are placed on the upper circuit board (4).

2. The multi-layer stacked SiP down-conversion module according to claim 1, characterized in that: The radio frequency, primary mixer and intermediate frequency circuit (6) comprises a radio frequency amplifier A (61), a radio frequency digitally controlled attenuator (62), a radio frequency switch filter group (63), a radio frequency amplifier B (64), a radio frequency attenuator (65), a first stage mixer (66), an intermediate frequency attenuator A (67), an intermediate frequency filter (68), and an intermediate frequency amplifier (69) which are connected in sequence.

3. The multi-layer stacked SiP down-conversion module according to claim 1, characterized in that: The first intermediate frequency, second mixer and second intermediate frequency circuit (7) comprises a first intermediate frequency attenuator B (71), a second mixer (72), a second intermediate frequency attenuator A (73), a second intermediate frequency filter A (74), a second intermediate frequency amplifier A (75), a second intermediate frequency digitally controlled attenuator (76), a second intermediate frequency amplifier B (77), a second intermediate frequency filter B (78) and a second intermediate frequency attenuator B (79) which are connected in sequence.

4. The multi-layer stacked SiP down-conversion module according to claim 1, characterized in that: The cover plate (13) is welded to the surrounding frame (12).

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