Trench type double-MOS (Metal Oxide Semiconductor) tube device with common drain electrode

Abstract

The utility model relates to the technical field of semiconductors, in particular to a drain-shared groove type double-MOS (Metal Oxide Semiconductor) tube device, which comprises a fixed frame, a through groove is formed in the fixed frame, and a double-MOS tube device main body is movably arranged in the through groove; according to the utility model, through the cooperation of the chute, the roller, the spring and the damping cylinder, the double-MOS-tube device main body can slide downwards when the double-MOS-tube device main body falls down due to hand sliding of a person during use or the double-MOS-tube device main body collides with other objects due to vibration during transportation, and in the process, the roller rolls in the chute and stretches the spring; meanwhile, the first conductive pin can drive the conductive plate and the conductive piece to slide in the sliding cavity, after the spring absorbs the vibration force completely, the spring can rebound slowly in cooperation with the damping cylinder, the effect of buffering the double-MOS-transistor device body can be achieved, the second conductive pin cannot be pulled by the double-MOS-transistor device body, the second conductive pin can be buffered, and the service life of the double-MOS-transistor device body is prolonged. And the service life of the double-MOS tube device main body is prolonged.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, in particular to a trench-type dual MOS tube device with a shared drain. Background Art

[0002] The trench dual MOS device with a common drain is a special semiconductor device. Its structural feature is that the polysilicon in the middle of the trench is divided into first polysilicon and second polysilicon, a bottom contact hole is opened on the MOS structure between the two trenches, and a connection layer is provided on the surface of the MOS structure. In order to prevent the connection between the MOS device and the circuit board from loosening due to vibration caused by collision or falling during equipment transportation, a MOS device with a buffer structure has now appeared.

[0003] For example, the patent specification of an existing Chinese patent (publication number: CN218333761U) discloses a dual-gate MOS device, in which a support rod is fixedly connected to the top of the vertical rod; a support plate is fixedly connected to the end of the support rod; a spring is fixedly connected to the bottom side of the support plate; and the bottom end of the spring is fixedly connected to the top side of the dual-gate MOS tube body.

[0004] However, in the implementation of the relevant technology, it is found that the dual-gate MOS device of the above design has the following problems: although the dual-gate MOS device can play a certain buffering effect, a spring is arranged on the dual-gate MOS device, so that the spring expands and contracts due to vibration during actual use, and then the spring pulls the dual-gate MOS device. Over time, it is still easy to cause the connection between the dual-gate MOS device and the circuit board to become loose and have poor contact. In view of this, a trench dual MOS tube device with a common drain is provided to overcome the above defects. Utility Model Content

[0005] The utility model aims to solve the shortcomings in the prior art and proposes a trench type dual MOS tube device with a shared drain.

[0006] In order to achieve the above-mentioned purpose, the utility model adopts the following technical scheme: a drain-shared trench-type dual MOS tube device, comprising a fixing frame, a through groove is opened in the fixing frame, a dual MOS tube device body is movably arranged in the through groove, two first conductive pins are symmetrically arranged at the bottom of the dual MOS tube device body, the other end of the first conductive pin is slidably connected to the second conductive pin, the second conductive pin is used for welding on a circuit board, rollers are arranged on both sides of the dual MOS tube device body, the rollers are rollingly connected to the fixing frame, a spring and a damping cylinder are arranged on the top of the roller, the other end of the spring and the damping cylinder is connected to the fixing frame, and the spring is movably sleeved on the damping cylinder.

[0007] As a further description of the above technical solution: two slide grooves and fixed openings are respectively provided in the fixed frame, the roller is rollingly connected in the slide groove, the two ends of the spring and the damping cylinder are respectively fixedly connected to the roller and the inner wall of the slide groove, and the first conductive pin is slidably inserted in the fixed opening.

[0008] As a further description of the above technical solution: a conductive member is slidably arranged inside the second conductive pin, a conductive plate is fixedly installed at the bottom of the first conductive pin, and the other end of the conductive plate is fixedly connected to the conductive member.

[0009] As a further description of the above technical solution: a sliding opening and a sliding cavity are respectively provided on the top and inside of the second conductive pin, the conductive member is slidably connected in the sliding cavity, and the conductive plate is slidably inserted in the sliding opening. When the roller rolls in the sliding groove, the first conductive pin will drive the conductive plate and the conductive member to slide in the sliding cavity, thereby avoiding the problem of motion interference. In addition, although the first conductive pin, the conductive plate, the conductive member and the second conductive pin are slidably connected, the first conductive pin, the conductive plate, the conductive member and the second conductive pin are always in contact, so the current can be transmitted stably, and the problem of poor contact can be prevented.

[0010] As a further description of the above technical solution: two heat dissipation ports are symmetrically opened on both sides of the fixing frame, and a heat conduction port is opened on the top of the fixing frame. The heat dissipation port, the heat conduction port and the through groove are connected. Through the cooperation of the heat dissipation port and the heat conduction port, the heat generated on the side and top of the main body of the dual MOS tube device can be quickly discharged.

[0011] As a further description of the above technical solution: heat dissipation holes are opened on both sides of the fixing frame, the heat dissipation holes are connected to the through grooves, heat dissipation fins are fixedly installed in the through grooves, and the heat dissipation fins are located below the main body of the dual MOS tube device. Through the cooperation of the heat dissipation holes and the heat dissipation fins, a large amount of heat generated at the bottom of the dual MOS tube device main body can be discharged, which helps to improve the performance of the dual MOS tube device main body.

[0012] As a further description of the above technical solution: two positioning plates are symmetrically fixedly installed at the bottom of both sides of the fixing frame, and threaded holes are opened in the positioning plates. The threaded holes are used to threadably insert positioning bolts to install the fixing frame on the circuit board. First, the second conductive pin is inserted into the appropriate position on the circuit board, and then the connection between the second conductive pin and the circuit board is welded to fix the second conductive pin on the circuit board. Then the positioning bolt is screwed into the threaded hole and extended into the circuit board. The fixing frame can be stably positioned and the dual MOS tube device body can be used.

[0013] The utility model has the following beneficial effects:

[0014] The drain-sharing grooved dual MOS tube device designed by the utility model can slide downward when the dual MOS tube device body falls due to a person's hand slipping during use or collides with other objects due to vibration during transportation through the cooperation of a slide groove, a roller, a spring and a damping cylinder. In this process, the roller rolls in the slide groove and stretches the spring, and at the same time, the first conductive pin drives the conductive plate and the conductive member to slide in the slide cavity. After the spring absorbs the vibration force completely, the damping cylinder can be used to make the spring rebound slowly, so as to achieve the effect of buffering the dual MOS tube device body, and the dual MOS tube device body will not pull the second conductive pin, but can buffer it, thereby improving the service life of the dual MOS tube device body.

[0015] The drain-sharing trench dual MOS tube device designed by the utility model can quickly discharge the heat generated by the dual MOS tube device body through the cooperation of the heat dissipation port and the heat conduction port. In addition, a large amount of heat generated at the bottom of the dual MOS tube device body can be discharged through the cooperation of the heat dissipation hole and the heat dissipation fin, which helps to improve the use performance of the dual MOS tube device body. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a schematic diagram of the overall structure of the utility model;

[0017] Figure 2 It is a three-dimensional structural schematic diagram of the interior of the fixing frame of the utility model in a half-section view;

[0018] Figure 3 It is a schematic diagram of a three-dimensional structure of a half-section view of the interior of the second conductive pin of the utility model;

[0019] Figure 4 For this utility model Figure 2 The enlarged view of point A in the middle;

[0020] Figure 5 For this utility model Figure 2 Enlarged view of point B in the middle.

[0021] Legend:

[0022] 1. Fixing frame; 2. Through slot; 3. Dual MOS tube device body; 4. First conductive pin; 5. Second conductive pin; 6. Slide slot; 7. Roller; 8. Spring; 9. Damping cylinder; 10. Fixing port; 11. Conductive part; 12. Conductive plate; 13. Slide port; 14. Slide cavity; 15. Heat dissipation port; 16. Heat conduction port; 17. Heat dissipation hole; 18. Heat dissipation fin; 19. Positioning piece; 20. Threaded hole. DETAILED DESCRIPTION

[0023] Reference Figure 1-5The utility model provides a drain-shared trench dual MOS transistor device: comprising a fixing frame 1, a through groove 2 is provided in the fixing frame 1, a dual MOS transistor device body 3 is movably provided in the through groove 2, two first conductive pins 4 are symmetrically provided at the bottom of the dual MOS transistor device body 3, the other end of the first conductive pin 4 is slidably connected with a second conductive pin 5, the second conductive pin 5 is used for welding on a circuit board, rollers 7 are provided on both sides of the dual MOS transistor device body 3, the rollers 7 are rollingly connected to the fixing frame 1, a spring 8 and a damping cylinder 9 are provided on the top of the roller 7, the other end of the spring 8 and the damping cylinder 9 is connected to the fixing frame 1, the spring 8 is movably sleeved on the damping cylinder 9, two slide grooves 6 and a fixed opening 10 are respectively provided in the fixing frame 1, the roller 7 is rollingly connected in the slide groove 6, the two ends of the spring 8 and the damping cylinder 9 are respectively fixedly connected to the roller 7 and the inner wall of the slide groove 6, and the first conductive pin 4 is slidably inserted in the fixed opening 10.

[0024] In a specific implementation, when the dual MOS tube device body 3 falls due to a person's hand slipping during use or collides with other objects due to vibration during transportation, the dual MOS tube device body 3 will slide downward due to vibration. During this process, the roller 7 will roll in the slide groove 6 and stretch the spring 8. After the spring 8 absorbs the vibration force, the damping cylinder 9 can be used to slowly rebound the spring 8, thereby achieving the effect of buffering the dual MOS tube device body 3. The dual MOS tube device body 3 will not pull the second conductive pin 5, but can buffer it, thereby increasing the service life of the dual MOS tube device body 3.

[0025] As a further implementation scheme of the above technical scheme: a conductive part 11 is slidably arranged inside the second conductive pin 5, a conductive plate 12 is fixedly installed on the bottom of the first conductive pin 4, the other end of the conductive plate 12 is fixedly connected to the conductive part 11, a sliding opening 13 and a sliding cavity 14 are respectively provided on the top and inside of the second conductive pin 5, the conductive part 11 is slidably connected in the sliding cavity 14, and the conductive plate 12 is slidably inserted in the sliding opening 13.

[0026] In a specific implementation, based on the above implementation, while the roller 7 rolls in the slide groove 6, the first conductive pin 4 will drive the conductive plate 12 and the conductive member 11 to slide in the slide cavity 14, thereby avoiding the problem of motion interference. In addition, although the first conductive pin 4, the conductive plate 12, the conductive member 11 and the second conductive pin 5 are slidingly connected, the first conductive pin 4, the conductive plate 12, the conductive member 11 and the second conductive pin 5 are always in contact, so as to stably transmit the current and prevent the problem of poor contact.

[0027] As a further implementation of the above technical solution: two heat dissipation ports 15 are symmetrically provided on both sides of the fixing frame 1, a heat conduction port 16 is provided on the top of the fixing frame 1, and the heat dissipation ports 15, the heat conduction ports 16 and the through slot 2 are connected. Through the cooperation of the heat dissipation ports 15 and the heat conduction ports 16, the heat generated on the side and top of the dual MOS tube device body 3 can be quickly discharged.

[0028] As a further implementation scheme of the above technical scheme: heat dissipation holes 17 are provided on both sides of the fixing frame 1, the heat dissipation holes 17 are connected to the through slots 2, heat dissipation fins 18 are fixedly installed in the through slots 2, and the heat dissipation fins 18 are located below the dual MOS tube device body 3. Through the cooperation of the heat dissipation holes 17 and the heat dissipation fins 18, a large amount of heat generated at the bottom of the dual MOS tube device body 3 can be discharged, which helps to improve the performance of the dual MOS tube device body 3.

[0029] As a further implementation of the above technical solution: two positioning pieces 19 are symmetrically fixedly installed at the bottom of both sides of the fixing frame 1, and threaded holes 20 are provided in the positioning pieces 19. The threaded holes 20 are used to threadably insert positioning bolts to install the fixing frame 1 on the circuit board. First, the second conductive pin 5 is inserted into a suitable position on the circuit board, and then the second conductive pin 5 is welded to the connection between the circuit board and the second conductive pin 5 to fix the second conductive pin 5 on the circuit board, and then the positioning bolt is screwed into the threaded hole 20 and extended into the circuit board, so that the fixing frame 1 can be stably positioned, and the dual MOS tube device body 3 can be used.

[0030] Working principle:

[0031] When using the utility model, first insert the second conductive pin 5 into a suitable position on the circuit board, then weld the second conductive pin 5 and the connection between the circuit board to fix the second conductive pin 5 on the circuit board, then screw the positioning bolt into the threaded hole 20 and extend it into the circuit board, so that the fixing frame 1 can be stably positioned, and the dual MOS tube device body 3 can be used. When the dual MOS tube device body 3 is used, the device falls due to the slip of the hand of the person, or the device collides with other objects due to vibration during transportation, the dual MOS tube device body 3 will slide downward due to vibration. In this process, the roller 7 will roll in the slide groove 6 and stretch the spring 8. At the same time, the first conductive pin 4 will drive the conductive plate 12 and the conductive member 11 to slide in the slide cavity 14. After the spring 8 absorbs the vibration force completely, the damping cylinder 9 can be used to make the spring 8 slowly rebound, that is, The dual MOS tube device body 3 can achieve a buffering effect, which will not cause the dual MOS tube device body 3 to pull the second conductive pin 5, but can buffer it, thereby increasing the service life of the dual MOS tube device body 3. In addition, although the first conductive pin 4, the conductive plate 12, the conductive member 11 and the second conductive pin 5 are slidably connected, the first conductive pin 4, the conductive plate 12, the conductive member 11 and the second conductive pin 5 are always in contact, so that the current can be stably transmitted, and the problem of poor contact can be prevented. Through the cooperation of the heat dissipation port 15 and the heat conduction port 16, the heat generated on the side and top of the dual MOS tube device body 3 can be quickly discharged. In addition, through the cooperation of the heat dissipation hole 17 and the heat dissipation fin 18, a large amount of heat generated at the bottom of the dual MOS tube device body 3 can be discharged, which helps to improve the use performance of the dual MOS tube device body 3.

[0032] Finally, it should be noted that the above are only preferred embodiments of the present invention and are not intended to limit the present invention. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art can still modify the technical solutions described in the aforementioned embodiments or make equivalent substitutions for some of the technical features therein. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A trench dual MOS transistor device with a common drain, comprising a fixing frame (1), characterized in that: The fixing frame (1) is provided with a through groove (2), a dual MOS tube device body (3) is movably arranged in the through groove (2), two first conductive pins (4) are symmetrically arranged at the bottom of the dual MOS tube device body (3), the other end of the first conductive pin (4) is slidably connected to a second conductive pin (5), the second conductive pin (5) is used for welding on a circuit board, rollers (7) are arranged on both sides of the dual MOS tube device body (3), the rollers (7) are rollingly connected to the fixing frame (1), a spring (8) and a damping cylinder (9) are arranged on the top of the roller (7), the other end of the spring (8) and the damping cylinder (9) are connected to the fixing frame (1), and the spring (8) is movably sleeved on the damping cylinder (9).

2. The trench dual MOS transistor device with a common drain according to claim 1, characterized in that: The fixing frame (1) is provided with two slide grooves (6) and a fixing opening (10), the roller (7) is rollingly connected in the slide groove (6), the two ends of the spring (8) and the damping cylinder (9) are fixedly connected to the roller (7) and the inner wall of the slide groove (6), respectively, and the first conductive pin (4) is slidably inserted in the fixing opening (10).

3. The trench dual MOS transistor device with a common drain according to claim 1, characterized in that: A conductive member (11) is slidably disposed inside the second conductive pin (5), a conductive plate (12) is fixedly mounted on the bottom of the first conductive pin (4), and the other end of the conductive plate (12) is fixedly connected to the conductive member (11).

4. The trench dual MOS transistor device with a common drain according to claim 3, characterized in that: A sliding opening (13) and a sliding cavity (14) are respectively provided on the top and inside of the second conductive pin (5); the conductive member (11) is slidably connected in the sliding cavity (14); and the conductive plate (12) is slidably inserted in the sliding opening (13).

5. The trench dual MOS transistor device with a common drain according to claim 1, characterized in that: Two heat dissipation openings (15) are symmetrically provided on both sides of the fixing frame (1), a heat conduction opening (16) is provided on the top of the fixing frame (1), and the heat dissipation openings (15), the heat conduction openings (16) and the through-groove (2) are connected.

6. The trench dual MOS transistor device with a common drain according to claim 1, characterized in that: Both sides of the fixing frame (1) are provided with heat dissipation holes (17), the heat dissipation holes (17) are connected to the through slot (2), a heat dissipation fin (18) is fixedly installed in the through slot (2), and the heat dissipation fin (18) is located below the dual MOS tube device body (3).

7. The trench dual MOS transistor device with a common drain according to claim 1, characterized in that: Two positioning plates (19) are symmetrically fixedly mounted on the bottom of both sides of the fixing frame (1), and threaded holes (20) are provided in the positioning plates (19). Positioning bolts are threadedly inserted into the threaded holes (20) to mount the fixing frame (1) on the circuit board.

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