Doping device, doping system and crystal pulling furnace

Abstract

The utility model provides a doping device, a doping system and a crystal pulling furnace, and belongs to the technical field of crystal pulling furnaces. Comprising a material storage assembly and an opening and closing assembly, the material storage assembly comprises a discharging port, the opening and closing assembly comprises a rotating part, the rotating part comprises a bearing face, the bearing face is arranged below the discharging port at intervals, the vertical projection of the outline of the discharging port is located in the bearing face, and the bearing face can deflect relative to the plane where the discharging port is located; the technical problem that the falling speed of doped materials of the doping device cannot be controlled is solved, and the technical effect of guaranteeing the quality of monocrystalline silicon finished products and the production efficiency is achieved by arranging the bearing face capable of deflecting relative to the plane where the discharging port is located.

Description

Technical Field

[0001] The present application relates to the technical field of crystal pulling furnaces, and in particular to a doping device, a doping system and a crystal pulling furnace. Background Art

[0002] The doping methods used in the Czochralski process to produce single-crystal silicon include the injection method, in which polycrystalline silicon is completely melted in a quartz crucible and then the doping material is melted into the silicon through a special device to achieve the purpose of doping.

[0003] During the processing of the crystal pulling furnace, the existing doping device generally controls the amount of doping material added by setting a control switch. The control switch is controlled by directly opening and closing the valve. The doping material will fall directly from the switch under the action of gravity. The directly controlled control switch cannot accurately control the amount of doping material added, and cannot ensure that the falling speed of the doping material is controllable. Generally, it can only be used for small amounts of doping material. When large quantities of doping material are required for multiple times, it cannot meet the needs.

[0004] Therefore, the technical problem of the prior art is that the falling rate of the doping material in the doping device cannot be controlled. Utility Model Content

[0005] The present application provides a doping device, which solves the technical problem that the falling rate of the doping material in the existing doping device cannot be controlled. By setting a bearing surface that can be deflected relative to the plane where the discharge port is located, the technical effect of ensuring the quality of the single crystal silicon product and the production efficiency is achieved.

[0006] A doping device provided in the present application adopts the following technical solution, including: a material storage component and an opening and closing component, the material storage component includes a discharge port, the opening and closing component includes a rotating part, the rotating part includes a bearing surface, the bearing surface is arranged below the discharge port, and the vertical projection of the discharge port contour is located within the bearing surface, wherein the bearing surface can be deflected relative to the plane where the discharge port is located.

[0007] Preferably, one end of the rotating member close to the discharge port is concave to form a material containing groove, and the bearing surface is located at the bottom of the material containing groove.

[0008] Preferably, the rotating member comprises: a first part and a second part, the material containing groove is located in the first part; the second part is sleeved on the outside of the first part, and the flange of the first part is arranged higher than the second part.

[0009] Preferably, the doping device further comprises a discharge assembly, the discharge assembly comprises a discharge pipe, the discharge pipe inlet is arranged below the rotating member, and is used to deliver the doped material to a designated position.

[0010] Preferably, the discharge pipe is a quartz piece, and the end of the discharge pipe close to the rotating part includes a leakage groove, and the rotating part is located in or on the leakage groove; the diameter of the leakage groove gradually decreases from the end close to the rotating part to the end away from the rotating part.

[0011] Preferably, the opening and closing assembly further comprises a connecting member having a rotational freedom, one end of the connecting member being connected to the second part and capable of driving the rotating member to deflect relative to the plane where the discharge port is located.

[0012] Preferably, the doping device further comprises a weighing component, which is mounted on the material storage component and / or the material discharging component and is electrically or signal-connected to the opening and closing component.

[0013] The present application also provides a doping system, comprising the doping device, docking assembly and sealed shell as described above, wherein the docking assembly is installed on a furnace body and is connected to a discharge assembly in the doping device; the sealed shell is sleeved on the outside of the doping device and the docking assembly and can be sealed and connected to the furnace body.

[0014] Preferably, the docking assembly comprises: a material guide trough and a lifting tube, the material guide trough is located below the outlet of the discharge tube; the lifting tube has a degree of lifting freedom, the lifting tube inlet is arranged corresponding to the material guide trough outlet, and the lifting tube outlet can be moved into the crucible.

[0015] The present application also provides a crystal pulling furnace, comprising: a furnace body and the aforementioned doping system, wherein a crucible is provided in the furnace body; the doping system is sealed and connected to the furnace body, and the doping system can transport doping material into the crucible.

[0016] In summary, the beneficial technical effects of this application are:

[0017] The present application provides a doping device, in which a discharge port and a carrying surface are arranged at an interval, and a doping material falls onto the carrying surface to form a doping material pile on the carrying surface. The opening and closing of the discharge port can be controlled by adjusting the distance between the carrying surface and the discharge port; at the same time, the carrying surface can be deflected relative to the plane where the discharge port is located. When the carrying surface is deflected quantitatively, the angle of the doping material pile changes, and the falling rate of the doping material located on the carrying part can be controlled; by quantitatively adjusting the distance between the discharge port and the carrying surface and the deflection angle of the carrying surface, the feeding of the doping material and the falling rate of the doping material can be controlled, so that the doping device in the present application can meet the needs of large-scale and multiple feeding of doping materials, thereby ensuring the quality and production efficiency of the single crystal silicon finished product. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 This is a schematic diagram of a doping device of the utility model;

[0019] Figure 2 This is a schematic diagram of the structure of a doping device of the utility model

[0020] Figure 3 This is a front view of a doping device of the utility model;

[0021] Figure 4 for Figure 3 Sectional view in the AA direction;

[0022] Figure 5 for Figure 4 Enlarged view of point B in the middle;

[0023] Figure 6 It is a schematic diagram of a doping device with a sealed shell according to the utility model;

[0024] Figure 7 for Figure 6 Cross-sectional view in CC direction;

[0025] Figure 8 It is a left view of a doping system of the utility model;

[0026] Fig. 9 for Figure 8 Cross-sectional view in the middle DD direction;

[0027] Fig.10 It is a front view of a crystal pulling furnace of the utility model.

[0028] Explanation of the reference numerals: 100, material storage assembly; 110, material discharge port; 200, opening and closing assembly; 210, rotating member; 210A, bearing surface; 211, first part; 2111, material storage trough; 2112, flange; 212, second part; 220, connecting member; 300, material discharge assembly; 310, material discharge pipe; 311, leakage trough; 400, crucible; 500, weighing assembly; 600, docking assembly; 610, material guide trough; 620, lifting tube; 700, furnace body; 800, sealed shell. DETAILED DESCRIPTION

[0029] The serial numbers assigned to the components herein, such as "first", "second", etc., are only used to distinguish the objects described and do not have any order or technical meaning. The "connection" and "coupling" mentioned in this application, unless otherwise specified, include direct and indirect connections (couplings). In the description of this application, it should be understood that the orientation or position relationship indicated by the terms "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", etc. are based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing this application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation to this application.

[0030] In the present application, unless otherwise clearly specified and limited, a first feature being “above” or “below” a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being “above”, “above”, and “above” a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0031] The present application provides a doping device to solve the technical problem of lack of a doping device, and achieves the technical effect of ensuring the quality of single crystal silicon products and production efficiency by providing a doping device.

[0032] The doping method used in the production of single crystal silicon by the Czochralski method includes the injection method, in which the polycrystalline silicon is completely melted in the quartz crucible 400, and then the doping material is melted into the silicon through a special device to achieve the purpose of doping. During the processing of the crystal pulling furnace, the existing doping device generally controls the amount of doping material by setting a control switch. The control method of the control switch is to directly open and close the valve. The doping material will fall directly from the switch under the action of gravity. The directly controlled control switch cannot accurately control the amount of doping material, and cannot ensure that the falling speed of the doping material is controllable. It can generally only be used for a small amount of doping material. When it is necessary to inject doping material in large quantities for multiple times, it cannot meet the needs. At the same time, since the existing doping material is generally a powder material, the powdered doping material must ensure purity, so it cannot come into contact with metal parts, and in order not to affect its fluidity, it is also necessary to avoid extrusion.

[0033] In order to solve the above problems, a doping device is provided, please refer to Figure 1The following technical solution is adopted, including: a storage component 100 and an opening and closing component 200, the storage component 100 includes a discharge port 110, the opening and closing component 200 includes a rotating member 210, the rotating member 210 has a deflection freedom and can be deflected relative to the discharge port 110, wherein the rotating member 210 includes a bearing surface 210A, the bearing surface 210A is spaced below the discharge port 110, and the vertical projection of the outline of the discharge port 110 is located within the bearing surface 210A.

[0034] The material storage component 100 is used to store doped materials, and includes a material storage chamber. The valve capacity of the material storage chamber can be selected according to actual conditions. The parts of the material storage component 100 that are in contact with the doped materials are made of materials that will not contaminate the doped materials, preferably quartz. The material storage component 100 includes a discharge port 110, and the discharge port 110 is preferably arranged at the bottom of the material storage chamber, and the doped materials in the material storage chamber can flow out through the discharge port 110.

[0035] Opening and closing assembly 200, please refer to Figure 2-5 The opening and closing component 200 is used to control the opening and closing of the doping material and the speed of the doping material discharge. Specifically, the opening and closing component 200 includes a rotating member 210, and the rotating member 210 includes a bearing surface 210A. The bearing surface 210A is spaced apart from the discharge port 110. There is a certain gap between the bearing surface 210A and the discharge port 110. The existence of the gap allows the doping material to fall onto the bearing surface 210A through the discharge port 110; in the present application, the vertical projection of the contour of the discharge port 110 is located on the bearing surface 210A, so that when the doping material flows out of the discharge port 110 under the action of gravity, the whole will flow into the bearing surface 210A instead of spilling outside the bearing surface 210A.

[0036] Due to the repose angle characteristics of the dust-like doping material, after the dust-like doping material accumulates to a certain extent on the bearing surface 210A, the doping material in the material storage component will not continue to fall. The specific distance between the bearing surface 210A and the discharge port 110 needs to be adjusted according to the material and weight of the doping material. During the debugging process of the doping device, it is necessary to allow the doping material to reach the bearing surface 210A from the discharge port 110, while preventing the doping material from escaping from the bearing surface 210A, so that the rotating member 210 can play a role of closing the discharge port 110 before rotating; when doping is required, the rotating member 210 with deflection freedom is relative to The discharge port 110 is deflected, so that the angle of the doping material in the resting state is changed, and the doping material will separate from the rotating member 210, thus realizing the unloading process of the doping material; the rotating member 210 is connected to the external driving member, and can realize directional deflection under the drive of the external driving member. Since the repose angle of the same doping material is fixed, the falling rate of the doping material can be changed by changing the deflection angle of the rotation angle; when the distance between the bearing surface 210A and the discharge port 110 is fixed, the falling rate of the doping material can be quantitatively changed by changing the deflection angle of the rotating member 210, and the specific relationship between the falling rate and the material can be measured in actual conditions.

[0037] The present application provides a doping device, wherein a bearing surface 210A is spaced below a discharge port 110, and a vertical projection of the contour of the discharge port 110 is located within the bearing surface 210A, so that doping material can fall on the bearing surface 210A to form a doping material pile on the bearing surface 210A, and the opening and closing of the discharge port 110 can be controlled by adjusting the distance between the bearing surface 210A and the discharge port 110; at the same time, the bearing surface 210A can be deflected relative to the plane where the discharge port 110 is located, and when the bearing surface 210A is quantitatively deflected, the angle of the doping material pile changes, and the falling rate of the doping material located on the bearing part can be controlled; by quantitatively adjusting the distance between the discharge port 110 and the bearing surface 210A and the deflection angle of the bearing surface 210A, the feeding of the doping material and the falling rate of the doping material can be controlled, so that the doping device in the present application can meet the needs of large-scale and multiple feeding of doping materials, thereby ensuring the quality and production efficiency of the single crystal silicon finished product.

[0038] Please refer to the figure, the end of the rotating member 210 close to the material outlet 110 is concave to form a material receiving groove 2111, and the bearing surface 210A is located at the bottom of the material receiving groove 2111. Specifically, in one embodiment, the rotating member 210 is disc-shaped, including a concave bearing surface 210A and a flange 2112 higher than the bearing surface 210A. By providing the material receiving groove 2111, the first part 211 can better accommodate the doping material; the top of the flange 2112 is rounded, and the top of the flange 2112 forms a curved surface, so that the doping material can slide off the edge of the flange 2112 better.

[0039] Please refer to Figure 5 The rotating member 210 includes: a first part 211 and a second part 212 , the material containing groove 2111 is located in the first part 211 ; the second part 212 is sleeved on the outside of the first part 211 , and the flange 2112 of the first part 211 is higher than the second part 212 .

[0040] Specifically, in one embodiment, the rotating member 210 includes a first part 211 and a second part 212; the first part 211 and the second part 212 are detachably connected, the material storage tank 2111 is located on the first part 211, and the first part is used to carry doping material. Since the part carrying the material needs to be a non-metallic material such as a quartz piece and needs to be replaced, the rotating member 210 is divided into two parts, and the first part 211 and the second part 212 are connected by a detachable connection method such as snap-on or bonding, which can facilitate the subsequent replacement of the first part 211 and save costs; the shape of the second part 212 is similar to the first part 211, so that the second part 212 can be semi-enclosed on the outside of the first part 211, which can better fix the first part 211 and limit the slippage of the first part 211; by setting the flange 2112 of the first part 211 higher than the second part 212, when the rotating member 210 is deflected, the doping material will not contact the second part 212, thereby avoiding contamination of the doping material.

[0041] Specifically, in one embodiment, the rotating member 210 includes a first part 211 made of quartz material, and a bearing surface 210A is provided on the quartz part for bearing doping materials, thereby avoiding contamination of the doping materials and ensuring the purity of the doping materials; the second part 212 is connected to the first part 211, and the second part 212 can be a metal part or other high-temperature resistant material. Since the rotating member 210 needs to be driven by other driving members to deflect, the second part 212 is provided to avoid damage to the quartz. The second part 212 can be connected to the driving member, and drive the first part 211 to deflect synchronously under the drive of the driving member.

[0042] Furthermore, the doping device further includes a discharge assembly 300, which includes a discharge pipe 310, and the inlet of the discharge pipe 310 is arranged below the rotating member 210, and is used to deliver the doping material to the crucible 400. The discharge assembly 300 is used to transport the doping material to a designated location. In the present application, the discharge assembly 300 includes the discharge pipe 310, which is located below the rotating member 210. The doping material can fall from the bearing surface 210A into the discharge pipe 310. The outlet of the discharge pipe 310 is located at a designated location, such as inside the crucible 400 or at the entrance of the next component. The doping material can move along the discharge pipe 310 under the action of gravity.

[0043] The discharge pipe 310 is a quartz member, and the end of the discharge pipe 310 close to the rotating member 210 includes a leakage groove 311, and the rotating member 210 is located in the leakage groove 311 or on the leakage groove 311; the diameter of the leakage groove 311 gradually decreases from the end close to the rotating member 210 to the end away from the rotating member 210. Specifically, the portion of the discharge pipe 310 in contact with the doping material is made of quartz, which can avoid contamination of the doping material; the end of the discharge pipe 310 close to the rotating member 210 includes a leakage groove 311, and the diameter of the leakage groove 311 gradually decreases from the end close to the rotating member 210 to the end away from the rotating member 210, that is, the shape of the discharge pipe 310 is funnel-shaped, and the rotating member 210 is located in the funnel mouth or on the funnel mouth. By setting the funnel-shaped leakage groove 311, the discharge location of the doping material can be controlled while the doping material is completely received to prevent leakage.

[0044] Please refer to Figure 6-7 , the opening and closing assembly 200 further includes a connecting member 220, the connecting member 220 has a rotational freedom, one end of the connecting member 220 is connected to the second part 212 and / or the first part 211, and can drive the rotating member 210 to deflect relative to the plane where the discharge port 110 is located. Specifically, in one embodiment, the connecting member 220 is strip-shaped and has at least one turning angle; a connecting hole is left on the connecting member 220, and the connecting member 220 is connected to the driving member through the connecting member 220, and the connecting member 220 will deflect when the driving member rotates, and the other end of the connecting member 220 is connected to the rotating member 210, driving the rotating member 210 to deflect, and the connecting member 220 is connected to the second part 212, and the connection method can be screw connection, welding, clamping, etc.; in another embodiment, the connecting member 220 is connected to the first part 211, and the connection method can be bonding, etc. It can be imagined that the connecting member can also be connected to the first part 211 and the second part at the same time.

[0045] Please refer to Figure 7 The doping device further comprises a weighing assembly 500, which is mounted on the storage assembly 100 and / or the discharge assembly 300, and is electrically or signal-connected to the opening and closing assembly 200. The weighing assembly 500 is used to measure the mass of the doping material added by the doping device, and transmit the weight information to the opening and closing assembly 200 to accurately control the degree of deflection of the rotating member 210. In one embodiment, the weighing assembly 500 is connected to the discharge assembly 300, and is used to test the change of the doping material on the discharge assembly 300, and the output of the doping material can be obtained by calculation; in another embodiment, the weighing assembly 500 is connected to the storage assembly 100, and is used to test the change of the doping material on the storage assembly 100, and the output of the doping material can be obtained by calculation; in yet another embodiment, the weighing assembly 500 is connected to the discharge assembly 300 and the storage assembly 100.

[0046] In one embodiment, the doping device includes a cover shell, the storage component 100 is installed in the upper position of the cover shell by snap-fitting, and the discharge port 110 is located below the storage component 100; the opening and closing component 200 includes a rotating member 210, a driving member and a connecting member 220, the rotating member 210 is arranged in the cover shell, the driving member is fixedly installed on the cover shell, the output end of the driving member can rotate, the connecting member 220 connects the rotating member 210 and the driving member, and the rotating member 210 can deflect under the drive of the driving member; the discharge component 300 is snap-fitted to the bottom of the rotating disk in the cover shell through a flange plate, and the discharge pipe 310 in the discharge component 300 is provided with a cover shell of the same shape as the discharge pipe 310 for protecting the discharge pipe 310; the cover shell is taken as a whole, and the various components are sealed and connected, and the inside of the cover shell can be vacuumed by a vacuum pump; the weighing component 500 can also be installed on the cover shell, and the falling speed of the doped material can be controlled by measuring the changes in the weight of the various components installed in the cover shell and the doped material.

[0047] This application also provides a doping system, please refer to Figure 8-9 , including: the aforementioned doping device, a docking assembly 600 and a sealed shell 800, the docking assembly 600 is installed on the furnace body 700, and is connected to the discharge assembly 300 in the doping device, and the sealed shell 800 is sleeved on the outside of the doping device and the docking assembly 600, and can be sealed and connected to the furnace body 700.

[0048] Specifically, the docking assembly 600 includes a flange, and the aforementioned doping device is provided with a flange corresponding thereto. The docking assembly 600 and the doping assembly are connected by bolts, and the doping material can flow from the doping assembly into the docking assembly 600, and then be transported to the crucible 400 through the installation assembly; the docking assembly 600 is fixedly installed on the furnace body 700 by screw connection, and at least a part of the docking assembly 600 can extend into the crucible 400 or above the crucible 400 in the furnace body 700, and the doping material is put into the crucible 400; the sealed shell 8 00, the sealed shell 800 is made of metal material, and the sealed shell 800 is mounted outside the aforementioned doping device and docking assembly 600. An opening is left in the sealed shell, and the opening is connected to the inside of the furnace body 700. The sealed connection between the sealed shell and the furnace body 700 enables the furnace body 700 and the sealed shell to form a sealed environment together; by setting up the docking assembly 600, it can be docked with doping devices of different models, thereby improving the versatility of the doping system; at the same time, since the crystal pulling furnace includes the doping device mentioned above, it also has the same technical effect as mentioned above.

[0049] Please refer to Fig. 9The docking assembly 600 includes: a material guide trough 610 and a lifting tube 620. The material guide trough 610 is located below the outlet of the discharge tube 310. The lifting tube 620 has a degree of freedom of lifting and lowering. The inlet of the lifting tube 620 is arranged corresponding to the outlet of the material guide trough 610. The outlet of the lifting tube 620 can be moved into the crucible 400.

[0050] Specifically, in one embodiment, the material guide trough 610 is a quartz piece, which is arranged below the rotating member 210 and is used to receive the doping material. The material guide trough 610 is inclined relative to the furnace body 700, so that the doping material can flow from the end close to the rotating member 210 to the end close to the furnace body 700 under the action of gravity, and the flow rate of the doping material can be changed by changing the inclination angle of the material guide trough 610; the part of the lifting tube 620 mouth that contacts the doping material is a quartz piece, and the lifting tube 620 has the freedom of lifting and lowering. It can be lifted and lowered under the drive of the driving member, so that the lifting tube 620 can be close to or away from the crucible 400 to complete the doping; the lifting tube 620 includes an inlet and an outlet, and the inlet of the lifting tube 620 is arranged corresponding to the outlet of the material guide trough 610, that is, an opening is left on the side wall of the cylindrical lifting tube 620, and the doping material can flow in from the opening, and then flow into the crucible 400 through the outlet located at the bottom end of the lifting tube 620.

[0051] Please refer to Fig.10 The present application also provides a crystal pulling furnace for the production of single crystal silicon, including: a furnace body 700 and the aforementioned doping system, a crucible 400 is provided in the furnace body 700, the doping system is sealed and connected to the furnace body 700, and the doping system can transport the doping material into the crucible 400.

[0052] Specifically, the crystal pulling furnace includes a furnace body 700 and a crucible 400 located in the furnace body 700. In one embodiment, the furnace body 700 is hollow inside and is made of metal material as a whole. The crucible 400 is used to hold doping materials. The furnace body 700 includes an upper and lower part. An installation portion is left on the upper furnace body 700. The installation portion includes a through hole that passes through the furnace body 700. The aforementioned docking assembly 600 is sealed and connected to the furnace body 700. The telescopic tube can pass through the furnace body 700 and enter into the crucible 400 located below the furnace body 700. Since the crystal pulling furnace includes the doping device mentioned above, it also has the same technical effect as mentioned above.

[0053] The present application also includes a transport assembly, which includes a trolley, a guide and a locking mechanism, two sets of ball screws and four sets of guide rails, which can transport the doping assembly to a position where it docks with the docking assembly 600. When the trolley reaches the correct position, the position of the guide mechanism and the locking mechanism is determined, and holes are punched to fix them for positioning during the subsequent doping process.

[0054] Principle / Steps:

[0055] First, set the distance between the rotating part 210 and the discharge port 110 of the material storage component 100 so that the doping material can fall onto the bearing surface 210A of the rotating part 210 and remain stationary; then install the docking component 600 on the furnace cover, and install the doping device on the transport component, push the transport component close to the furnace body 700, and reach the working position with the assistance of the guide and limit structures, drive the cylinder to lock the trolley, and then drive the two sets of screw nuts of the trolley to make the sealing surface of the outlet of the doper body and the docking part of the doper fit together, and then the vacuuming and doping actions can be carried out.

[0056] When the internal cavity of the doping device is evacuated to the same pressure as that inside the furnace body 700, the plug plate between the docking assembly 600 and the furnace body 700 opens, and the linear unit drives the quartz lifting tube 620 to reach the lower limit position, the driving part on the doping device starts to work, the rotating part 210 rotates (the rotating part 210 acts as a repose angle valve, and the repose angle valve opens to the required angle at this time), and material unloading begins; when the unloading amount reaches the target value, the result can be fed back by the weighing sensor, at this time, the motor returns to the original position, the repose angle valve is closed, and the unloading is completed; after the linear guide rail of the docking part of the doper drives the quartz telescopic cylinder to move to the upper limit position, the plug plate valve is closed, and the unloading process is completed.

[0057] Technical effect:

[0058] 1. The present application provides a doping device, wherein a bearing surface 210A is spaced below a discharge port 110, and a vertical projection of the contour of the discharge port 110 is located within the bearing surface 210A, so that doping material can fall on the bearing surface 210A to form a doping material pile on the bearing surface 210A. By adjusting the distance between the bearing surface 210A and the discharge port 110, the opening and closing of the discharge port 110 can be controlled; at the same time, the bearing surface 210A can be deflected relative to the plane where the discharge port 110 is located. When the bearing surface 210A is quantitatively deflected, the angle of the doping material pile changes, and the falling rate of the doping material located on the bearing part can be controlled; by quantitatively adjusting the distance between the discharge port 110 and the bearing surface 210A and the deflection angle of the bearing surface 210A, the doping material feeding and the doping material falling rate can be controlled, so that the doping device in the present application can meet the needs of large-scale and multiple doping of doping materials, thereby ensuring the quality and production efficiency of single crystal silicon products.

[0059] Although the preferred embodiments of the present application have been described, those skilled in the art may make other changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications falling within the scope of the present application.

[0060] Obviously, those skilled in the art can make various changes and modifications to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is also intended to include these modifications and variations.

Claims

1. A doping device, characterized in that: include: A material storage assembly (100), wherein the material storage assembly (100) comprises a material discharge port (110); An opening and closing assembly (200), the opening and closing assembly (200) comprising a rotating member (210), the rotating member (210) comprising a bearing surface (210A), the bearing surface (210A) being arranged at a distance below the discharge port (110), and the vertical projection of the profile of the discharge port (110) being located within the bearing surface (210A); Wherein, the bearing surface (210A) can be deflected relative to the plane where the discharge port (110) is located.

2. The doping device according to claim 1, characterized in that: One end of the rotating member (210) close to the material outlet (110) is concave to form a material receiving groove (2111), and the bearing surface (210A) is located at the bottom of the material receiving groove (2111).

3. The doping device according to claim 2, characterized in that: The rotating member (210) comprises: A first part (211), wherein the material containing groove (2111) is located in the first part (211); The second part (212) is sleeved on the outside of the first part (211), and the flange (2112) of the first part (211) is arranged higher than the second part (212).

4. The doping device according to claim 2, characterized in that: The doping device further comprises a discharge assembly (300), wherein the discharge assembly (300) comprises a discharge pipe (310), wherein the inlet of the discharge pipe (310) is arranged below the rotating member (210) and is used to deliver the doped material to a designated position.

5. The doping device according to claim 4, characterized in that: The discharge pipe (310) is a quartz member, and one end of the discharge pipe (310) close to the rotating member (210) comprises a leakage groove (311), and the rotating member (210) is located in the leakage groove (311) or on the leakage groove (311); The diameter of the leakage groove (311) gradually decreases from an end close to the rotating member (210) to an end away from the rotating member (210).

6. The doping device according to claim 3, characterized in that: The opening and closing assembly (200) further comprises a connecting member (220), wherein the connecting member (220) has a rotational freedom, and one end of the connecting member (220) is connected to the second part (212) and / or the first part (211), and can drive the rotating member (210) to deflect relative to the plane where the discharge port (110) is located.

7. The doping device according to claim 4, characterized in that: The doping device further comprises a weighing component (500), wherein the weighing component (500) is installed on the material storage component (100) and / or the material discharging component (300), and is electrically connected or signal-connected to the opening and closing component (200).

8. A doping system, characterized in that: include: The doping device according to any one of claims 1 to 7; A docking assembly (600), the docking assembly (600) being installed on the furnace body (700) and being in communication with the discharge assembly (300) in the doping device; A sealed shell (800), wherein the sealed shell (800) is sleeved on the outside of the doping device and the docking assembly (600) and is sealedly connected to the furnace body (700).

9. The doping system according to claim 8, characterized in that: The docking assembly (600) comprises: A material guide trough (610), the material guide trough (610) being located below the outlet of the discharge pipe (310); The lifting tube (620) has a degree of freedom in lifting and lowering, the inlet of the lifting tube (620) is arranged corresponding to the outlet of the material guide trough (610), and the outlet of the lifting tube (620) can be moved into the crucible (400).

10. A crystal pulling furnace, characterized in that: include: A furnace body (700), wherein a crucible (400) is arranged in the furnace body (700); The doping system according to any one of claims 8 to 9 is sealedly connected to the furnace body (700), and the doping system can transport the doping material into the crucible (400).

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