Ultra-wideband high-power synthesis amplifier module

Abstract

The utility model relates to the technical field of solid-state amplifiers, in particular to an ultra-wideband high-power synthesis amplifier module. Comprising a temperature compensation attenuator, an equalizer, a low noise amplifier, a fixed attenuator, a medium power amplifier, a first ultra-wideband power bridge, a first 10W power amplifier, a second 10W power amplifier, a second ultra-wideband power bridge and a directional coupler. The problems that a planar microstrip circuit is poor in synthesis efficiency and large in insertion loss under the ultra-wideband condition are solved.

Description

Technical Field

[0001] The utility model relates to the technical field of solid-state amplifiers, in particular to an ultra-wideband high-power synthetic amplifier module. Background Art

[0002] At present, the power amplifiers of electronic countermeasure equipment all use vacuum tube technology or solid-state technology. With the increased investment in the research and development of solid-state power amplifiers, the idea of ​​"solid-state replacing traveling wave tubes" was proposed, and the transmitter was upgraded and transformed, gradually realizing the "solid-state replacing traveling wave tubes" in many equipment.

[0003] Although solid-state power amplifiers and vacuum device power amplifiers have their own advantages, in the fields of electronic countermeasures, radar, test and measurement, the equipment requires higher reliability, stronger environmental adaptability, and stronger maintainability. Compared with solid-state technology, vacuum tube technology has poor reliability, long startup time, and requires periodic power-on maintenance, high maintenance costs, and the danger of high-voltage maintenance. Solid-state power amplifiers have been favored by users for their unique high reliability, easy maintenance, flexible structure, almost no startup time, and ultra-long life. At the same time, the demand for ultra-wideband high-power solid-state amplifiers is becoming more and more urgent.

[0004] Defects and shortcomings of the existing technology:

[0005] 1) The output power of the latest GaN monolithic chip in the 2-18 GHz frequency band can barely reach the order of 8W-9W, which cannot meet the requirements of special platforms (the demand for solid-state power amplifiers on UAV platforms);

[0006] 2) Traditional ultra-wideband high-power centralized amplifiers use coaxial spatial synthesis technology, which can achieve a maximum of hundreds of watts. However, this technology is complex, difficult to maintain, and inherently has poor heat dissipation problems, making it difficult to promote on airborne and unmanned platforms;

[0007] 3) The traditional planar synthesis method uses microstrip lines for connection, which makes it difficult to achieve ultra-wideband and large-scale chip synthesis. The bandwidth of microstrip lines is limited, and the larger the synthesis scale, the greater the loss and the larger the volume. Utility Model Content

[0008] The utility model provides an ultra-wideband high-power synthesis amplifier module, which solves the problems of poor synthesis efficiency and large insertion loss of solid-state amplifiers.

[0009] In order to achieve the purpose of the utility model, the technical scheme adopted is: an ultra-wideband high-power synthetic amplifier module, including a temperature compensation attenuator, an equalizer, a low-noise amplifier, a fixed attenuator, a medium power amplifier, a first ultra-wideband power bridge, a first 10W power amplifier, a second 10W power amplifier, a second ultra-wideband power bridge and a directional coupler. The input signal is subjected to signal amplitude compensation and input standing wave improvement through the temperature compensation attenuator, and then the link gain flatness is adjusted through the equalizer, and then the signal is amplified through the low-noise amplifier, and then the matching between the low-noise amplifier and the medium power amplifier is adjusted through the fixed attenuator, and then transmitted to the medium power amplifier, and then divided into two paths through the first ultra-wideband power bridge and transmitted to the two-path first 10W power amplifier and the second 10W power amplifier, and the second ultra-wideband power bridge synthesizes the output, and finally outputs through the directional coupler.

[0010] As an optimization solution of the utility model, the ultra-wideband high-power synthetic amplifier module also includes a power supply and control board and a high-speed modulator. The voltage of the power supply and control board is modulated by the high-speed modulator to provide the required power for the first 10W power amplifier and the second 10W power amplifier, and monitor the voltage, current and power status. When a fault occurs, the power supply is cut off and the status is reported.

[0011] As an optimization solution of the utility model, the equalizer includes a main transmission microstrip line and short stubs, and a plurality of short stubs are respectively and alternately arranged on both sides of the main transmission microstrip line.

[0012] As an optimization solution of the present utility model, the first ultra-wideband power bridge and the second ultra-wideband power bridge are both stripline bridges to achieve ultra-wideband synthesis.

[0013] As an optimization solution of the utility model, the directional coupler adopts three layers of staggered parallel coupled strip lines to realize a wide-band coupler.

[0014] As an optimization solution of the utility model, the first 10W power amplifier and the second 10W power amplifier both use diamond copper substrate as heat dissipation substrate.

[0015] As an optimization solution of the utility model, the temperature compensation attenuator, equalizer, low noise amplifier, fixed attenuator, medium power amplifier, first ultra-wideband power bridge, first 10W power amplifier, second 10W power amplifier, second ultra-wideband power bridge and directional coupler are all installed in an independent housing.

[0016] The utility model has positive effects: 1) The utility model adopts ultra-wideband high-power bridge synthesis technology to solve the problem of poor synthesis efficiency and large insertion loss of planar microstrip circuits under ultra-wideband conditions;

[0017] 2) The utility model adopts ultra-wideband high-power bridge synthesis technology, and the synthesized output power reaches 18 watts to 25 watts, with an in-band gain flatness of ±2dB and an in-band power flatness of ±2dB, meeting the needs of unmanned aerial vehicle platforms for miniaturized ultra-wideband high-power solid-state amplifier modules;

[0018] 3) The utility model adopts a planar design, the core heat dissipation device is close to the heat dissipation surface of the shell, the heat dissipation efficiency is high, and it is suitable for reliable use on different platforms;

[0019] 4) The utility model adopts a modular design concept, which is convenient for system integration, simple in process assembly, easy in testing and maintenance, and convenient for mass production;

[0020] 5) The utility model has the advantages of simple structure, low cost and high reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The utility model is further described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0022] Figure 1 It is a principle block diagram of the utility model;

[0023] Figure 2 It is a circuit principle block diagram of the utility model;

[0024] Figure 3 It is the principle block diagram of the power supply, control board and high-speed modulator of the utility model;

[0025] Figure 4 It is a structural schematic diagram of the utility model high-speed modulator;

[0026] Figure 5 It is a schematic diagram of the plane structure of the utility model;

[0027] Figure 6 It is a three-dimensional schematic diagram of the utility model;

[0028] Figure 7 It is a structural schematic diagram of the ultra-wideband power bridge of the utility model;

[0029] Figure 8 It is a schematic diagram of input and output standing wave curves of the ultra-wideband power bridge of the utility model;

[0030] Fig. 9 It is a schematic diagram of the insertion loss curve of the ultra-wideband power bridge of the utility model;

[0031] Fig.10 It is a schematic diagram of the isolation curve of the ultra-wideband power bridge of the utility model;

[0032] Fig.11 It is a schematic diagram of the amplitude consistency curve of the ultra-wideband power bridge of the utility model;

[0033] Fig.12 It is a port phase difference curve diagram of the ultra-wideband power bridge of the utility model;

[0034] Fig.13 It is a port coupling curve diagram of the ultra-wideband power bridge of the utility model;

[0035] Fig.14 It is a circuit structure diagram of the utility model equalizer;

[0036] Fig.15 It is a performance curve diagram of the equalizer of the utility model;

[0037] Fig.16 It is a circuit structure diagram of the directional coupler of the utility model;

[0038] Fig.17 It is a coupling degree curve diagram of the directional coupler of the utility model;

[0039] Fig.18 It is a directivity curve diagram of the directional coupler of the utility model.

[0040] Among them: 1. temperature compensated attenuator, 2. equalizer, 3. low noise amplifier, 4. fixed attenuator, 5. medium power amplifier, 6. first ultra-wideband power bridge, 7. first 10W power amplifier, 8. second 10W power amplifier, 9. second ultra-wideband power bridge, 10. directional coupler, 11. power supply and control board, 12. high-speed modulator, 21. main transmission microstrip line, 22. stub, 61 input interface, 62. 90° interface, 63. 0° interface, 64. isolation port, 101. input end, 102. output end, 103. coupling end, 104. isolation end. DETAILED DESCRIPTION

[0041] like Figure 1 and Figure 2As shown, the utility model discloses an ultra-wideband high-power synthesis amplifier module, comprising a temperature compensation attenuator 1, an equalizer 2, a low noise amplifier 3, a fixed attenuator 4, a medium power amplifier 5, a first ultra-wideband power bridge 6, a first 10W power amplifier 7, a second 10W power amplifier 8, a second ultra-wideband power bridge 9 and a directional coupler 10. The 2±1dBm input signal passes through the temperature compensation attenuator 1 to perform signal amplitude compensation and improve input standing wave, then passes through the equalizer 2 to adjust the link gain flatness, then passes through the low noise amplifier 3 to amplify the signal, the gain of the low noise amplifier 3 is 15±1dB, then passes through the 2dB fixed attenuator 4 to adjust the matching between the low noise amplifier 3 and the medium power amplifier 5, and then is transmitted to the medium power amplifier 5 (the gain is 18±1dB, the output power is 30±1dBm), then passes through the first ultra-wideband power bridge 6 to be divided into two paths and transmitted to the first 10W power amplifier 7 and the second 10W power amplifier 8, the output is synthesized, and finally outputs through the directional coupler 10. The final output power is 42.5±0.5dBm, meeting the requirement of ≥42dBm.

[0042] like Figure 3 and Figure 4 As shown, the ultra-wideband high-power synthesis amplifier module also includes a power supply and control board 11 and a high-speed modulator 12. The voltage of the power supply and control board 11 is modulated by the high-speed modulator 12 to provide the required power for the first 10W power amplifier 7 and the second 10W power amplifier 8, and monitor the voltage, current and power status. When a fault occurs, the power supply is cut off and the status is reported. The power supply and control board 11 and the high-speed modulator 12 are divided into a power supply part and a control and detection circuit part. The 28V power supply is filtered and converted to output 28V, 8V, 5V and -5V voltages. The control and detection circuit part includes a timing and high-speed modulation circuit and a working state monitoring circuit. The working state detection circuit includes monitoring voltage, current and power status.

[0043] like Figure 5 and Figure 6 As shown, the temperature compensated attenuator 1, the equalizer 2, the low noise amplifier 3, the fixed attenuator 4, the medium power amplifier 5, the first ultra-wideband power bridge 6, the first 10W power amplifier 7, the second 10W power amplifier 8, the second ultra-wideband power bridge 9 and the directional coupler 10 all adopt a universal independent shell structure, which is convenient for micro-assembly process assembly and easy to independently test before integration to prevent signal interference between units, and can be prepared and processed in large quantities.

[0044] Temperature compensated attenuator 1: To meet the needs of airborne equipment, gain and power stability in a wide temperature range of -55℃ to +60℃, a temperature compensated attenuator 1 is designed at the input end. A 2dB temperature compensated attenuator 1 with a negative temperature coefficient is selected by design. The temperature coefficient is -0.009dB / dB / ℃. The attenuation of the temperature compensated attenuator 1 in the range of -55℃ to +60℃ varies from 0.9dB to 3.1dB. This compensates for the problem that the circuit has high gain at low temperatures and low gain at high temperatures in a wide temperature range.

[0045] Figure 7 and Figure 8-13 The structure diagram and performance curve of the ultra-wideband power bridge are given. Considering the requirements of miniaturization and easy integration of the UAV platform, the sizes of waveguide synthesis and microstrip synthesis are relatively large. For the first time, a stripline bridge is considered to achieve ultra-wideband synthesis. This structure can also achieve strong coupling through a wide-side coupling structure. The ultra-wideband power bridge includes an input interface 61, a 90° interface 62, a 0° interface 63 and an isolation port 64. Through testing, the input and output standing waves are less than 1.3, the insertion loss is less than 0.6dB, the isolation is greater than 22dB, the amplitude consistency is less than ±0.5dB, the phase difference is 91°±1.5°, and the withstand power is greater than 25 watts. It has excellent performance and a small size.

[0046] When designing equalizer 2, we need to solve the problem of amplitude flatness within a wide frequency band. Due to the uneven gain of ultra-wideband components or modules and the difference in loss during signal transmission, the in-band gain fluctuates within the operating frequency band. The imbalance of the entire amplifier module is about 5dB. Designing an equalizer with a frequency range of 2GHz to 18GHz and an equalization amount of 5dB can greatly improve the in-band gain flatness. The circuit structure diagram is shown in Fig.14 The equalizer 2 includes a main transmission microstrip line 21 and a short stub line 22, and a plurality of short stub lines 22 are staggeredly arranged on both sides of the main transmission microstrip line 21. Fig.15 .

[0047] Directional coupler 10: In ultra-wideband power devices, in order to ensure the reliable operation of the module, the module output power must be monitored, the high-power reflection must be measured and standing wave protection must be performed. In particular, in the measurement of high-power reflected signals, there are very high requirements for the directivity of the directional coupler, and the design of ultra-wideband modules is even more difficult. Common broadband couplers are sawtooth couplers and interdigital couplers. In engineering, they have a wide range of applications, but these two couplers belong to microstrip directional couplers, and microstrip circuits have their own weaknesses that cannot be overcome: the medium of the microstrip directional coupler is non-uniform, part of it is a dielectric substrate, part of it is air, and the phase velocities of odd and even modes are not equal, which leads to the directionality of the microstrip coupler being worse than that of the stripline coupler. In order not to affect the performance of the circuit, the distance from the upper surface of the packaging box to the ground plane must be greater than 10 times the thickness of the dielectric substrate, so the volume is larger. The use of three layers of staggered parallel coupled striplines to realize a broadband coupler can greatly reduce the thickness of the microwave device compared to the microstrip coupler. In view of the requirements of this application, a broadband directional coupler is designed. The circuit structure diagram is shown in Fig.16 The directional coupler 10 includes an input terminal 101, an output terminal 102, a coupling terminal 103 and an isolation terminal 104. The performance curve is shown in FIG. Figure 17-18 . The coupling degree is greater than 20dB and the isolation degree is greater than 18dB.

[0048] The use of diamond copper as a heat sink pad for high-power amplifier chips has greatly improved the overall reliability. Considering the requirements of unmanned payloads for miniaturization of equipment, the heat dissipation measures that can be provided in a limited space are relatively limited. How to quickly and efficiently export the heat of core components such as amplifiers requires a heat sink with high thermal conductivity. This is the first time that a diamond copper substrate has been used as a heat dissipation substrate in a high-power amplifier, and it has been verified by engineering. Traditional high-power amplifier chip pads generally choose molybdenum copper or copper-molybdenum-copper materials, with a thermal conductivity of 200 to 250W (M·K), while the thermal conductivity of diamond copper composite sheets is 500 to 600W (M·K), which is twice that of traditional heat sinks.

[0049] The specific embodiments described above further illustrate the purpose, technical solutions and beneficial effects of the present invention. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. An ultra-wideband high-power synthetic amplifier module, characterized in that: The invention comprises a temperature compensation attenuator (1), an equalizer (2), a low noise amplifier (3), a fixed attenuator (4), a medium power amplifier (5), a first ultra-wideband power bridge (6), a first 10W power amplifier (7), a second 10W power amplifier (8), a second ultra-wideband power bridge (9) and a directional coupler (10). The input signal is subjected to signal amplitude compensation and input standing wave improvement through the temperature compensation attenuator (1), then the link gain flatness is adjusted through the equalizer (2), the signal is amplified through the low noise amplifier (3), the matching between the low noise amplifier (3) and the medium power amplifier (5) is adjusted through the fixed attenuator (4), and then the signal is transmitted to the medium power amplifier (5), and then the signal is divided into two paths through the first ultra-wideband power bridge (6) and transmitted to the two paths of the first 10W power amplifier (7) and the second 10W power amplifier (8), and the second ultra-wideband power bridge (9) synthesizes the output, and finally outputs through the directional coupler (10).

2. The ultra-wideband high-power synthetic amplifier module according to claim 1, characterized in that: The ultra-wideband high-power synthesis amplifier module also includes a power supply and control board (11) and a high-speed modulator (12). The voltage of the power supply and control board (11) is modulated by the high-speed modulator (12) to provide the required power for the first 10W power amplifier (7) and the second 10W power amplifier (8), and monitors the voltage, current and power status. When a fault occurs, the power supply is cut off and the status is reported.

3. The ultra-wideband high-power synthetic amplifier module according to claim 2, characterized in that: The equalizer (2) comprises a main transmission microstrip line (21) and short stubs (22), wherein a plurality of short stubs (22) are respectively arranged in an interlaced manner on both sides of the main transmission microstrip line (21).

4. The ultra-wideband high-power synthetic amplifier module according to claim 3, characterized in that: The first ultra-wideband power bridge (6) and the second ultra-wideband power bridge (9) are both stripline bridges to achieve ultra-wideband synthesis.

5. The ultra-wideband high-power synthetic amplifier module according to claim 4, characterized in that: The directional coupler (10) adopts three layers of staggered parallel coupled strip lines to realize a wide-band coupler.

6. The ultra-wideband high-power synthetic amplifier module according to claim 5, characterized in that: The first 10W power amplifier (7) and the second 10W power amplifier (8) both use a diamond copper substrate as a heat dissipation substrate.

7. An ultra-wideband high-power synthetic amplifier module according to any one of claims 1 to 6, characterized in that: The temperature compensation attenuator (1), the equalizer (2), the low noise amplifier (3), the fixed attenuator (4), the medium power amplifier (5), the first ultra-wideband power bridge (6), the first 10W power amplifier (7), the second 10W power amplifier (8), the second ultra-wideband power bridge (9) and the directional coupler (10) are all installed in an independent housing.

Images