Plasma enhanced chemical vapor deposition equipment
By performing rounded corner treatment and designing the porous structure of ceramic sheets on the discharge plate of the plasma-enhanced chemical vapor deposition equipment, the problem of frequent ignition failures in the equipment is solved, and the continuous production of the equipment and the improvement of product quality is achieved.
Patent Information
- Application Number
- CN202421549134.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-02
- Publication Date
- 2025-06-03
- Estimated Expiration
- 2034-07-02
AI Technical Summary
After the existing plasma-enhanced chemical vapor deposition equipment increases the power and frequency of the radio frequency electrode, it leads to uncontrollable large current concentrated discharge between the discharge plate and the carrier plate, and frequent ignition failures, resulting in equipment damage and product failure.
By changing the structure of the discharge plate, the original edges and corners are grinded into rounded corners, and the bosses on the edges of the discharge plate are removed, and ceramic sheets are added to block the discharge plate to form a porous structure to promote the passage of airflow.
Effectively eliminates the cutting-edge discharge effect, reduces frequent line shutdown and high-value spare parts replacement, improves product quality and allows continuous production of equipment.
Smart Images
Figure CN222935510U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of solar cell production, and specifically, to a plasma enhanced chemical vapor deposition device. Background Art
[0002] With the continuous innovation and technological progress in the photovoltaic industry, the equipment in the manufacturing process of solar cells is also constantly updated and developed. Regarding the preparation of heterojunction solar cells (HJT), the plasma enhanced chemical vapor deposition device (PEVCD) belongs to the core equipment. In its coating process chamber, a pair of electrodes is formed between the discharge plate and the carrier plate. Under the action of a radio frequency power supply, the gas between the pair of electrodes is ionized, and then the silicon wafer on the carrier plate is coated.
[0003] Currently, for the conversion efficiency and production capacity of solar cells, the PEVCD device continuously increases the power and frequency of its radio frequency electrodes, resulting in an uncontrollable large current concentrated discharge phenomenon (such as short circuit and sparking) between the discharge plate and the carrier plate. Frequent sparking will not only cause damage to the discharge plate and / or the carrier plate, requiring repair or replacement of the discharge plate and / or the carrier plate, but also cause batch bad isolation and the transfer of defective products to the subsequent processes, resulting in more serious problems such as screen explosion.
[0004] Therefore, the current plasma enhanced chemical vapor deposition device still needs to be improved. Summary of the Utility Model
[0005] The utility model aims to solve at least one of the technical problems in the related technologies to a certain extent.
[0006] The utility model provides a plasma enhanced chemical vapor deposition device, including: a cavity, the cavity includes a cavity cover and a cavity bottom plate; a discharge plate, the discharge plate is located inside the cavity, the edges and corners of the discharge plate are rounded, and the discharge plate is connected to the cathode of the radio frequency electrode; a ceramic sheet, the ceramic sheet is located on the surface of the discharge plate away from the cavity cover, and the ceramic sheet is used to shield the discharge plate, wherein the area of the discharge plate is greater than or equal to the area of the ceramic sheet. The plasma enhanced chemical vapor deposition device of the utility model eliminates the tip discharge effect by changing the structure of the discharge plate, that is, grinding the original edges and corners of the discharge plate to round corners and removing the protrusions on the four peripheral edges of the original discharge plate, thereby effectively and low-costly solving the problems of frequent line stops for maintenance, frequent replacement of high-value spare parts, and large quantities of defective products in the process of plasma enhanced chemical vapor deposition, that is, improving the product quality and enabling the continuous production of the device.
[0007] According to an embodiment of the utility model, the discharge plate is a porous structure, and the pore diameter of the discharge plate is 0.3 - 2.5 mm.
[0008] According to an embodiment of the present utility model, the ceramic sheet has a porous structure, and the pore diameter of the ceramic sheet is 1-2 mm.
[0009] According to an embodiment of the present utility model, in the Y direction, the distances between the ceramic sheet and the edges of the discharge plate are L1 and L2 respectively, where L1 is 0-5 mm and L2 is 0-5 mm.
[0010] According to an embodiment of the present utility model, in the X direction, the distances between the ceramic sheet and the edges of the discharge plate are L3 and L4 respectively, where L3 is 0-5 mm and L3 is 0-5 mm.
[0011] According to an embodiment of the present utility model, the radius of the rounded corner is 1-5 mm.
[0012] According to an embodiment of the present utility model, there is a gap M between the discharge plate and the ceramic sheet 1 , and the gap M 1 is 0.5-2 mm.
[0013] According to an embodiment of the present utility model, the thickness of the discharge plate is 35-55 mm.
[0014] According to an embodiment of the present utility model, the thickness of the ceramic sheet is 0.5-2 mm.
[0015] According to an embodiment of the present utility model, it further includes: a back plate located on the surface of the discharge plate away from the ceramic sheet; a carrier plate located on the surface of the ceramic sheet away from the discharge plate, and the carrier plate is used to carry the silicon wafer to be coated; a heating plate located on the surface of the carrier plate away from the ceramic sheet, and the heating plate is used to heat the carrier plate.
[0016] According to an embodiment of the present utility model, the gap M between the back plate and the discharge plate 2 is 10-20 mm.
[0017] According to an embodiment of the present utility model, the chamber cover has a process gas inlet, and the chamber bottom plate has a gas outlet.
[0018] According to an embodiment of the present utility model, the anode of the radio frequency electrode is connected to the chamber bottom plate and is electrically connected to the heating plate and the carrier plate, the cathode of the radio frequency electrode is connected to the discharge plate, and the radio frequency electrode is used to generate plasma enhanced chemical vapor deposition inside the chamber.
[0019] According to an embodiment of the present utility model, the plasma enhanced chemical vapor deposition equipment further includes a vacuum pump and a vacuum pipeline. One end of the vacuum pipeline is connected to the gas outlet, and the other end of the vacuum pipeline is connected to the vacuum pump. Description of the Drawings
[0020] The above and / or additional aspects and advantages of the present utility model will become apparent and be readily understood from the description of the embodiments in conjunction with the following drawings, where:
[0021] Figure 1 Schematic structural diagrams of discharge plates and ceramic sheets for some embodiments;
[0022] Figure 2 Schematic structural framework diagrams of plasma enhanced chemical vapor deposition apparatuses for some embodiments;
[0023] Figure 3 Schematic structural framework diagrams of plasma enhanced chemical vapor deposition apparatuses for still some other embodiments;
[0024] Figure 4 Schematic structural framework diagrams of plasma enhanced chemical vapor deposition apparatuses for yet some other embodiments.
[0025] Explanation of reference numerals:
[0026] 1: Discharge plate; 2: Ceramic sheet; 3: Chamber cover; 31: Process gas inlet; 4: Chamber bottom plate; 41: Gas outlet; 5: Vacuum pipeline; 6: Vacuum pump; 7: Back plate; 8: Carrier plate; 9: Heating plate; 10: Insulating plate. Detailed implementation manners
[0027] The following details the implementation manners of the present utility model. The implementation manners described below are exemplary and are only used to explain the present utility model and should not be construed as a limitation to the present utility model.
[0028] The tip discharge effect refers to that on the surface of a conductor, the sharper the position, the greater the charge density, and the energy is concentrated near the tip. The convex part at the edge of the discharge plate exactly conforms to the characteristics of the tip discharge effect and is verified during the production process: Each sparking occurs at the edge of the discharge plate. During the plasma enhanced chemical vapor deposition process, after increasing the VHF power supply power and frequency, the alternating electric field on the surface of the discharge plate is also enhanced, thus causing frequent sparking failures of the discharge plate and damaging components such as the carrier plate or the discharge plate.
[0029] Accordingly, the present utility model provides a plasma enhanced chemical vapor deposition apparatus, which includes a chamber, the chamber includes a chamber cover and a chamber bottom plate; a discharge plate, the discharge plate is located inside the chamber, the edges of the discharge plate are rounded, and the discharge plate is connected to the cathode of the radio frequency electrode; a ceramic sheet, the ceramic sheet is located on the surface of the discharge plate away from the chamber cover, and the ceramic sheet is used to shield the discharge plate, wherein the area of the discharge plate is greater than or equal to the area of the ceramic sheet.
[0030] The plasma enhanced chemical vapor deposition equipment of the present utility model eliminates the tip discharge effect by changing the structure of the discharge plate, that is, rounding the edges of the original discharge plate after grinding and removing the protrusions on the four peripheral edges of the original discharge plate, thereby effectively and low-costly solving the problems of frequent line stops for maintenance, frequent replacement of high-value spare parts, and large quantities of defective products during the plasma enhanced chemical vapor deposition process, that is, improving the product quality and enabling the equipment to continuously produce.
[0031] According to the present invention, referring to Figure 1 , the edges of the discharge plate 1 are rounded, and there are no protrusions on the four peripheral edges of the discharge plate 1. The ceramic sheet 2 is located on one side surface of the discharge plate 1.
[0032] In some embodiments, referring to Figure 2 , the cavity of the plasma enhanced chemical vapor deposition equipment is composed of a cavity cover 3 and a cavity bottom plate 4. The discharge plate 1 is located inside the cavity, and the ceramic sheet 2 is located on the side surface of the discharge plate 1 away from the cavity cover 3. Thus, the problem of arcing between the discharge plate or the carrier plate during the gas phase deposition of silicon wafers can be solved.
[0033] In some embodiments, the discharge plate is a porous structure, and the pore diameter of the discharge plate is 0.3 - 2.5 mm.
[0034] In some embodiments, the ceramic sheet is a porous structure, and the pore diameter of the ceramic sheet is 1 - 2 mm.
[0035] The discharge plate and the ceramic sheet are set to be porous structures, and the pore diameter is controlled within the above range, so that the gas flow can smoothly pass through the ceramic sheet and the discharge plate, reducing the divergence of process gas from the side gaps caused by removing the protrusions on the discharge plate, and improving the utilization rate of process gas and the coating uniformity.
[0036] In some embodiments, referring to Figure 1 , in the Y direction, the distances between the ceramic sheet and the edges of the discharge plate are L1 and L2 respectively, L1 is 0 - 5 mm, and L2 is 0 - 5 mm; in the X direction, the distances between the ceramic sheet and the edges of the discharge plate are L3 and L4 respectively, L3 is 0 - 5 mm, and L3 is 0 - 5 mm. With such a design, the generation of tip discharge effect can be further reduced, thereby improving the production efficiency.
[0037] It can be understood that L1 and L2 can be equal or not equal, and L3 and L4 can be equal or not equal.
[0038] In some embodiments, the radius of the rounded corner is 1 - 5 mm.
[0039] In some embodiments, there is a gap M between the discharge plate and the ceramic sheet 1, this gap is used for caching process gas to reduce the blockage of the ceramic sheet.
[0040] Optionally, the gap M between the discharge plate and the ceramic sheet 1 is 0.5 - 2 mm. Thus, while reducing the blockage of the ceramic sheet, the utilization rate of the process gas is improved.
[0041] In some embodiments, the thickness of the discharge plate is 35 - 55 mm; the thickness of the ceramic sheet is 0.5 - 2 mm.
[0042] In some embodiments, referring to Figure 4 , the cavity cover 3 and the cavity bottom plate 4 form a cavity, and the backplane 7, the discharge plate 1, the ceramic sheet 2, the carrier plate 8, the heating plate 9, etc. are located inside the cavity. The positions of these backplane 7, discharge plate 1, ceramic sheet 2, carrier plate 8, heating plate 9 are set as follows: the backplane 7 is located on the surface of the discharge plate 1 away from the ceramic sheet 2; the carrier plate 8 is located on the surface of the ceramic sheet 2 away from the discharge plate, and the carrier plate 8 is used to carry the silicon wafer to be coated; the heating plate 9 is located on the surface of the carrier plate 8 away from the ceramic sheet 2, and the heating plate 8 is used to heat the carrier plate 8. The surface of the heating plate 9 away from the carrier plate is close to the cavity bottom plate 4, the side of the backplane 7 away from the discharge plate 1 is close to the cavity cover 3, and an insulating plate 10 (such as PTFE) is provided on the surface of the backplane 7 close to the cavity cover 3. Specifically, the cavity cover and the cavity bottom plate can play a role in sealing the process cavity and maintaining a vacuum process state under the pumping action of the vacuum pump; the backplane is used to feed process gas and the RF power supply electrode, and the insulating plate (such as PTFE) provided on the surface of the backplane close to the cavity cover can avoid the occurrence of a short circuit between the backplane and the cavity cover; the discharge plate is used to connect the cathode of the RF power supply and discharge to the anode plate (carrier plate) to achieve the coating function; the ceramic sheet is used to block the discharge plate to prevent excess film layers generated during coating from adhering to the discharge plate; the carrier plate carries the silicon wafer to be coated and completes the coating and the transfer of the silicon wafer; the heating plate is used to heat the carrier plate to reach the temperature required for the process reaction. In this way, during the plasma-enhanced chemical vapor deposition process, the problem of arcing on the discharge plate or the carrier plate can be effectively alleviated.
[0043] It can be understood that, as Figure 2As shown, the discharge plate 1 is located inside the cavity, and the ceramic sheet 2 is located on the surface of the discharge plate 1 away from the cavity cover 3. The back plate, carrier plate, heating plate, etc. are also located inside the cavity. The positions of these back plate, carrier plate, and heating plate relative to the discharge plate and the ceramic sheet are as follows: the back plate is located on the surface of the discharge plate away from the ceramic sheet; the carrier plate is located on the surface of the ceramic sheet away from the discharge plate, and the carrier plate is used to carry the silicon wafer to be coated; the heating plate is located on the surface of the carrier plate away from the ceramic sheet, and the heating plate is used to heat the carrier plate. The surface of the heating plate away from the carrier plate is close to the bottom plate of the cavity, the side of the back plate away from the discharge plate is close to the cavity cover, and an insulating plate (such as PTFE) is provided on the surface of the back plate close to the cavity cover.
[0044] In the plasma enhanced chemical vapor deposition device according to the present invention, there may be gaps between the cavity cover, the bottom plate of the cavity, the back plate, the discharge plate, the ceramic sheet, the carrier plate, and the heating plate. These gaps are beneficial for the process gas or the ionized process gas to pass through.
[0045] Optionally, the gap M between the back plate and the discharge plate 2 is 10 - 20 mm. Thus, it is beneficial for the connection between the electrode plate of the radio frequency electrode and the discharge plate, and it is also beneficial for the process gas to enter this gap during the gas phase deposition process.
[0046] In some embodiments, referring to Figure 3 , the cavity cover 3 has a process gas inlet 31, and the bottom plate 4 of the cavity has a gas outlet 41.
[0047] In some embodiments, referring to Figure 3 , the plasma enhanced chemical vapor deposition device further includes a vacuum pump 6 and a vacuum pipeline 5. One end of the vacuum pipeline 5 is connected to the gas outlet 41, and the other end of the vacuum pipeline 5 is connected to the vacuum pump 6. Thus, under the action of the vacuum pump, the cavity can maintain a vacuum state.
[0048] In some embodiments, the process gas pipeline for transporting the process gas passes through the process gas inlet and is located in the gap between the discharge plate and the back plate. In this way, the process gas with densely distributed holes on the discharge plate is evenly distributed between the discharge plate and the carrier plate.
[0049] Optionally, the process gas includes at least one of silane, phosphine doped with hydrogen, borane doped with hydrogen, hydrogen, carbon dioxide, and methane.
[0050] Optionally, the process gas pipeline is an aluminum pipeline.
[0051] It can be understood that Figure 3Structural framework diagram of a plasma enhanced chemical vapor deposition apparatus. Although the chamber lid, chamber bottom plate, back plate, discharge plate, ceramic plate, carrier plate, and heating plate are located within the chamber and are not shown, the positional relationships of these chamber lid, chamber bottom plate, back plate, discharge plate, ceramic plate, carrier plate, and heating plate are set according to the foregoing description, that is, the chamber lid and the chamber bottom plate form the chamber, and the back plate, discharge plate, ceramic plate, carrier plate, heating, etc. are located inside the chamber wall. The positions of these back plate, discharge plate, ceramic plate, carrier plate, and heating plate are set as follows: the back plate is located on the surface of the discharge plate away from the ceramic plate; the carrier plate is located on the surface of the ceramic plate away from the discharge plate, and the carrier plate is used to carry the silicon wafer to be coated; the heating plate is located on the surface of the carrier plate away from the ceramic plate, and the heating plate is used to heat the carrier plate. The surface of the heating plate away from the carrier plate is close to the chamber bottom plate, the side of the back plate away from the discharge plate is close to the chamber lid, and an insulating plate (such as PTFE) is provided on the surface of the back plate close to the chamber lid.
[0052] In some embodiments, the anode of the radio frequency electrode is connected to the chamber bottom plate and is electrically connected to the heating plate and the carrier plate. The cathode of the radio frequency electrode is connected to the discharge plate. The radio frequency electrode is used to generate plasma enhanced chemical vapor deposition inside the chamber.
[0053] Optionally, referring to Figure 4 , an electrode plate 11 is further connected to the process gas pipeline, and the discharge plate is connected to the cathode of the radio frequency electrode through this electrode plate.
[0054] Optionally, the carrier plate is in direct contact with the heating plate, and good electrical conduction is formed between the two, and they are connected to the chamber through a cable and serve as the anode of the radio frequency electrode. In this way, after the radio frequency power supply is started, a very high frequency alternating electric field is applied between the discharge plate and the carrier plate, and the mixed process gas is ionized into plasma. The plasma is deposited on the surface of the silicon wafer on the carrier plate, realizing the function of silicon wafer coating.
[0055] In some embodiments, the radio frequency electrode is a VHF (very high frequency radio frequency electrode).
[0056] It should be understood that unless otherwise stated, all scientific and technical terms used in the present invention have the same meaning as commonly understood by those skilled in the art to which the present invention belongs. All patents and published publications related to the present invention are incorporated into the present invention by reference in their entirety. The term "comprising" or "including" is an open expression, that is, it includes the content specified in the present invention, but does not exclude other aspects of the content.
[0057] In the description of this specification, the descriptions referring to terms such as "one embodiment", "another embodiment", etc. mean that the specific features, structures, materials or characteristics described in connection with the embodiment are included in at least one embodiment of the present utility model. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples. Additionally, it should be noted that in this specification, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features.
[0058] Although the embodiments of the present utility model have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be construed as limiting the present utility model. Those of ordinary skill in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present utility model.
Claims
1. A plasma enhanced chemical vapor deposition device, characterized in that: include: A cavity, the cavity comprising a cavity cover and a cavity bottom plate; A discharge plate, the discharge plate is located inside the cavity, the corners of the discharge plate are rounded, and the discharge plate is connected to the cathode of the radio frequency electrode; a ceramic sheet, the ceramic sheet being located on a side surface of the discharge plate away from the cavity cover, the ceramic sheet being used to shield the discharge plate, Wherein, the area of the discharge plate is greater than or equal to the area of the ceramic sheet.
2. The plasma enhanced chemical vapor deposition equipment according to claim 1, characterized in that: The discharge plate is a porous structure, and the pore size of the discharge plate is 0.3-2.5 mm; And / or, the ceramic sheet is a porous structure, and the pore size of the ceramic sheet is 1-2 mm.
3. The plasma enhanced chemical vapor deposition equipment according to claim 1 or 2, characterized in that: In the Y direction, the distances between the ceramic sheet and the edge of the discharge plate are L1 and L2 respectively, and in the X direction, the distances between the ceramic sheet and the edge of the discharge plate are L3 and L4 respectively, where L1 is 0-5mm, L2 is 0-5mm, L3 is 0-5mm, and L4 is 0-5mm.
4. The plasma enhanced chemical vapor deposition equipment according to claim 1 or 2, characterized in that: The radius of the fillet is 1-5 mm.
5. The plasma enhanced chemical vapor deposition equipment according to claim 1 or 2, characterized in that: There is a gap M1 between the discharge plate and the ceramic sheet, and the gap M1 is 0.5-2 mm.
6. The plasma enhanced chemical vapor deposition equipment according to claim 1 or 2, characterized in that: The thickness of the discharge plate is 35-55 mm; The thickness of the ceramic sheet is 0.5-2 mm.
7. The plasma enhanced chemical vapor deposition equipment according to claim 1 or 2, characterized in that: Also includes: A back plate, the back plate being located on a surface of the discharge plate that is away from the ceramic sheet; A carrier plate, the carrier plate is located on a side surface of the ceramic sheet away from the discharge plate, and the carrier plate is used to carry the silicon sheet to be coated; A heating plate is located on a side surface of the carrier plate away from the ceramic sheet, and is used to heat the carrier plate.
8. The plasma enhanced chemical vapor deposition equipment according to claim 7, characterized in that: There is a gap M2 between the back plate and the discharge plate, and M2 is 10-20 mm.
9. The plasma enhanced chemical vapor deposition equipment according to claim 7, characterized in that: The chamber cover has a process gas inlet, and the chamber bottom plate has a gas outlet. The anode of the RF electrode is connected to the chamber bottom plate and is conductive with the heating plate and the carrier plate. The cathode of the RF electrode is connected to the discharge plate. The RF electrode is used to generate plasma enhanced chemical vapor deposition inside the cavity.
10. The plasma enhanced chemical vapor deposition equipment according to claim 9, characterized in that: Also includes: A vacuum pump and a vacuum pipeline, one end of the vacuum pipeline is connected to the gas outlet, and the other end of the vacuum pipeline is connected to the vacuum pump.