Etching equipment
By cutting the openings on the buffer plate of the etching device, the etching gas flow field is improved, and the problem of over-etching of the film layer in the prior art is solved, resulting in the fast etching rate in the prior art, and the product quality is improved.
Patent Information
- Application Number
- CN202421847211.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-01
- Publication Date
- 2025-06-06
- Estimated Expiration
- 2034-08-01
AI Technical Summary
During the etching process of existing etching equipment, there are abnormalities in the edge of the semi-finished product of the display panel. It is analyzed that the etching rate at the edge is too fast, resulting in excessive loss of the corresponding film layer during the etching process.
An etching device is designed, including a chamber, a first electrode, a first buffer plate and a second buffer plate. Each buffer plate cuts the openings on the side close to the first electrode to improve the etching gas flow field in the chamber and prevent plasma from gathering at the sides of the first electrode.
By improving the etching gas flow field, plasma aggregation is avoided, and the problem of excessive etching rate of the edge of the article to be etched is reduced, thereby avoiding excessive etching of the film layer and improving product quality.
Smart Images
Figure CN222953040U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the field of display technology, in particular to an etching device. Background Art
[0002] At present, display panels are widely used in many electronic products, such as mobile phones, tablet computers, watches, car displays, etc. In the production process of display panels, it is often necessary to etch the metal film layer to obtain a film layer with a target pattern. Please refer to Figure 1 , Figure 1 The schematic diagram of the etching equipment of the prior art. The etching equipment 10' comprises a chamber A', a first electrode 100', and a plurality of buffer plates 200', wherein the plurality of buffer plates 200' are closely arranged around the first electrode 100'. When in use, the semi-finished display panel can be placed on the first electrode 100' for etching. When the etching is completed and the semi-finished display panel is inspected, an abnormality is found at the edge of the semi-finished display panel. The analysis shows that the etching rate at the edge is too fast, resulting in excessive loss of the corresponding film layer during the etching process. Utility Model Content
[0003] The purpose of the utility model is to provide an etching device to solve the above problems.
[0004] In order to achieve the above-mentioned purpose, the utility model provides an etching device, which includes a chamber, a first electrode, a first buffer plate and a second buffer plate. The chamber has a top and a bottom relative to each other, and a first side wall and a second side wall connected between the top and the bottom, and the first side wall is adjacent to the second side wall; the first electrode is located in the chamber and is arranged adjacent to the bottom, and the first electrode has adjacent first side edges and second side edges, the first side edge is opposite to the first side wall, the second side edge is opposite to the second side wall, the first side edge extends along a first direction, the second side edge extends along a second direction, and the first direction intersects with the second direction; the first buffer plate is arranged adjacent to the bottom, and the first buffer plate is connected to the first side wall and the first side wall. The second buffer plate is arranged adjacent to the bottom, the second buffer plate is connected to the second side wall and the second side, and the second buffer plate has a second opening corresponding to the second side; wherein a vertical projection of a portion of the first side on the bottom overlaps with a vertical projection of the first opening on the bottom and makes at least a portion of the first opening exposed to the first electrode, and a vertical projection of a portion of the second side on the bottom overlaps with a vertical projection of the second opening on the bottom and makes at least a portion of the second opening exposed to the first electrode.
[0005] As an optional technical solution, along the length direction of the first buffer plate, the first buffer plate has a first size s1, and the first opening has a second size s2, wherein 0.5*s1<s2<0.7*s2.
[0006] As an optional technical solution, along the width direction of the first buffer plate, the first buffer plate has a third size s3, and the first opening has a fourth size s4, wherein 0.4*s3<s4<0.6*s3.
[0007] As an optional technical solution, the first buffer plate and the second buffer plate are metal plates, and the etching equipment also has a plurality of first metal support members, which are connected and arranged below the first buffer plate and the second buffer plate and connected to a fixed potential.
[0008] As an optional technical solution, the etching equipment also includes a first auxiliary plate and at least one second metal support member, the first auxiliary plate is a metal plate, the first auxiliary plate is arranged adjacent to a corner formed by the first side wall and the second side wall, the first electrode is connected to the first auxiliary plate, and the at least one second metal support member is connected and arranged under the first auxiliary plate and connected to a fixed potential.
[0009] As an optional technical solution, the etching equipment also has a third buffer plate and a fourth buffer plate. The third buffer plate and the first buffer plate are symmetrically arranged relative to the first electrode, and the fourth buffer plate and the second buffer plate are symmetrically arranged relative to the first electrode.
[0010] As an optional technical solution, the etching equipment also includes multiple first auxiliary plates and multiple second metal support members. The multiple auxiliary plates are metal plates and are respectively arranged at multiple corners of the chamber. The first electrode is connected to the multiple first auxiliary plates, and each second metal support member is connected and arranged under the corresponding first auxiliary plate and connected to a fixed potential.
[0011] As an optional technical solution, a groove is provided in the middle area of the first buffer plate to serve as the first opening.
[0012] As an optional technical solution, the first electrode adjacent to the first side edge is connected and supported on the first buffer plate, a portion of the first opening is located below the first electrode, and a portion of the first opening is exposed to the first electrode.
[0013] As an optional technical solution, the first electrode adjacent to the first side is connected and supported on the first buffer plate, and a vertical projection of a portion of the first side on the bottom is aligned with a vertical projection of a side of the first opening adjacent to the first electrode on the bottom.
[0014] In the etching equipment of the utility model, each buffer plate is cut with an opening on one side close to the first electrode. The structure of each opening can improve the etching gas flow field in the chamber, avoid the problem that plasma gathers at the side of the first electrode and causes the etching rate of the object to be etched to be too fast, resulting in excessive etching of the corresponding film layer, thereby improving product quality.
[0015] The present invention is described in detail below with reference to the accompanying drawings and specific embodiments, but is not intended to limit the present invention. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] Figure 1 A schematic diagram of an etching device in the prior art;
[0017] Figure 2 It is a side view of an embodiment of an etching device of the utility model;
[0018] Figure 3 A top view of an embodiment of an etching device of the present invention;
[0019] Figure 4 It is a partial schematic diagram of an embodiment of an etching device of the utility model;
[0020] Figure 5 It is a cross-sectional view of the first buffer plate along line XX' in the etching device of the utility model;
[0021] Figure 6 It is a top view of another embodiment of the etching equipment of the present invention. DETAILED DESCRIPTION
[0022] In order to provide a further understanding of the purpose, structure, features and functions of the present invention, the present invention is described in detail below with reference to the embodiments.
[0023] The following descriptions of the embodiments refer to the attached drawings to illustrate specific embodiments of the present invention. The directional terms mentioned in the present invention, such as "upper", "lower", "front", "back", "left", "right", "side", etc., are only with reference to the directions of the attached drawings. Therefore, the directional terms used are used to illustrate and understand the present invention, but not to limit the present invention.
[0024] Please refer to Figures 2 to 6 , Figure 2 This is a side view of an embodiment of an etching device of the utility model. Figure 3 This is a top view of an embodiment of an etching device of the utility model. Figure 4 It is a partial schematic diagram of an embodiment of the etching equipment of the utility model. Figure 5 It is a cross-sectional view of the first buffer plate along line XX' in the etching device of the utility model, Figure 6It is a top view of another embodiment of the etching equipment of the present invention.
[0025] In this embodiment, the etching device 10 includes a chamber 100, a first buffer plate 200, a second buffer plate 300, and a first electrode 410. The chamber 100 has a top 110, a bottom 120, and a first side wall 101 and a second side wall 102 connected between the top 110 and the bottom 120. The first side wall 101 and the second side wall 102 are adjacent to each other, and there is an angle of about 90 degrees between the two. The first electrode 410 is located in the chamber 100 and is arranged adjacent to the bottom 110. It has an adjacent first side edge 411 and a second side edge 412. The first side edge 411 is opposite to the first side wall 101, and the second side edge 412 is opposite to the second side wall 102. The first buffer plate 200 is arranged adjacent to the bottom 120, and the first buffer plate 200 connects the first side wall 101 and the first side edge 411 of the first electrode 410. The second buffer plate 300 is disposed adjacent to the bottom 120, and the second buffer plate 300 connects the second side wall 102 and the second side edge 412 of the first electrode 410. Further, the first buffer plate 200 has a first opening 210 corresponding to the first side edge 411, and the second buffer plate 300 has a second opening 310 corresponding to the second side edge 412. Figure 3 As shown, a portion of the first side 411 overlaps with a vertical projection of the first opening 210 on the bottom 120 and makes at least a portion of the first opening 210 exposed from the first side 411 to the first electrode 410, and a portion of the second side 412 overlaps with a vertical projection of the second opening 310 on the bottom 120 and makes at least a portion of the second opening 310 exposed from the second side 412 to the first electrode 410.
[0026] In one embodiment, the first side 411 extends along the first direction F1, the second side 412 extends along the second direction F2, the first direction F1 intersects with the second direction F2, for example, the first direction F1 is perpendicular to the second direction F2. The first electrode 410 may be rectangular. The first side 411 is a long side of the first electrode 410, and the second side 412 is a short side of the first electrode 410. The first direction F1 is the long side direction of the first electrode 410, and the second direction F2 is the short side direction of the first electrode 410, that is, the first buffer plate 200 is arranged along a long side of the first electrode 410, and the second buffer plate 300 is arranged along a short side of the first electrode 410.
[0027] Combination Figure 2 , Figure 3 and Figure 5As shown, a groove A is opened in the middle area of the first buffer plate 200 as the first opening 210, and the four sides of the first buffer plate 200 are reserved. One end of the first buffer plate 200 is connected to the first side wall 101, and the other opposite end of the first buffer plate 200 contacts and supports the first electrode 410 (near the area where the first side edge 411 is located), so that in the second direction F2, the projection of part of the first side edge 411 of the first electrode 410 on the bottom 120 overlaps with the projection of the first opening 210 on the bottom 120. Figure 3 For example, a portion of the first side edge 411 of the first electrode 410 is not in contact with the first buffer plate 200 but is located on the first opening 210. At this time, a portion of the first opening 210 is located below the first electrode 410, and a portion of the first opening 210 is exposed from the first side edge 411 to the first electrode 410. In another embodiment, Figure 6 As shown, the projection of a portion of the first side 411 of the first electrode 410 on the bottom 120 is aligned with the projection of the first opening 210 on the bottom 120 . At this time, the first opening 210 is completely exposed from the first side 411 to the first electrode 410 .
[0028] Similarly, the middle area of the second buffer plate 300 may also be provided with a groove B as the second opening 310, and in this case, the sides of the second buffer plate 300 are all retained. One end of the second buffer plate 300 is connected to the second side wall 102, and the other opposite end of the second buffer plate 300 contacts and supports the first electrode 410 (the area adjacent to the second side edge 412), so that in the first direction F1, the projection of part of the second side edge 412 of the first electrode 410 on the bottom 120 overlaps with the projection of the second opening 310 on the bottom 120. Figure 3 For example, part of the second side 412 of the first electrode 410 is not in contact with the second buffer plate 300 but is located on the second opening 310. At this time, part of the second opening 310 is located below the first electrode 410, and part of the second opening 310 is exposed from the second side 412 to the first electrode 410. In another embodiment, Figure 6 As shown, the projection of the second side 412 of the first electrode 410 on the bottom 120 is aligned with the projection of the second opening 310 on the bottom 120 , and at this time, the second opening 310 is completely exposed from the first electrode 410 .
[0029] In other embodiments, the first buffer plate 200 may also have a bottom plate and a side portion extending from the bottom plate to form a groove as the first opening 210. In this case, the first buffer plate 200 retains the side portions of three peripheries, and the side portion corresponding to the first side edge 411 is removed. In the first direction F1, the first buffer plate 200 has two opposite ends, which can contact and support under the first electrode 410 (adjacent to the area where the first side edge 411 is located), and make the projection of the first side edge 411 of the first electrode 410 on the bottom 120 overlap with the projection of the first opening 210 on the bottom 120 in the second direction F2. Specifically, at least part of the first opening 210 is located under the first electrode 410, and part of the first opening 210 is exposed from the first side edge 411 to the first electrode 410. When multiple buffer plates are provided, reference may be made to the first buffer plate 200, and no further description is given here.
[0030] In one embodiment, the etching device 10 is used to etch an object to be etched, and the object to be etched is, for example, a semi-finished display panel. The object to be etched can be placed on the first electrode 410. The etching device 10 also has a second electrode 420, and the second electrode 420 is adjacent to the top 110 of the chamber 100. The chamber 100 can be a closed space, and the top 110 of the chamber 100 is also provided with an air inlet (not shown), and the bottom 120 of the chamber 100 is also provided with an air outlet (not shown), and the chamber 100 can be connected to the outside world through the air inlet and the air outlet. The air inlet is used to provide the gas required in the etching process into the chamber 100. The air outlet discharges the relevant gas and reaction products. When in use, the first electrode 410 and the second electrode 420 can be energized to form an electromagnetic field between the two, and the etching gas entering the two can be ionized into plasma under the action of the electromagnetic field to etch the object to be etched. When the etching gas reaches the surface of the object to be etched, it will physically or chemically react with the target area on the object to be etched, so that the corresponding film layer forms a target pattern.
[0031] In the etching device 10 of the utility model, the first buffer plate 200 and the second buffer plate 300 respectively cut out the first opening 210 and the second opening 310 on the side close to the first electrode 410. The structure of the first opening 210 and the second opening 310 can improve the etching gas flow field in the chamber 100, and avoid the plasma (plasma) gathering at the first side edge 410 and the second side edge 420 of the first electrode 410, which causes the etching rate of the object to be etched here to be too fast and causes the problem of over-etching of the corresponding film layer, thereby improving product quality.
[0032] In one embodiment, the etching apparatus 10 may further include a third buffer plate 500 and a fourth buffer plate 600 (eg, Figure 3As shown in FIG. 1 , the third buffer plate 500 and the first buffer plate 200 are symmetrically arranged relative to the first electrode 410, and the fourth buffer plate 600 and the second buffer plate 300 are symmetrically arranged relative to the first electrode 410. In other words, the first buffer plate 200 and the third buffer plate 500 are arranged along the two long sides of the first electrode 410, and the openings thereon are adjacent to the two long sides of the first electrode 410; the second buffer plate 300 and the fourth buffer plate 600 are arranged along the two short sides of the first electrode 410, and the openings thereon are adjacent to the two short sides of the first electrode 410. The design of the third buffer plate 500 and the fourth buffer plate 600 can refer to the first buffer plate 200 and the second buffer plate 300, so as to improve the etching gas flow field in the chamber 100, avoid the plasma (plasma) gathering at the four sides of the first electrode 410, resulting in a faster etching rate at each edge of the etched object, causing the problem of over-etching of the corresponding film layer, thereby improving the product quality.
[0033] In one embodiment, along the length direction of the first buffer plate 200 (i.e., the first direction F1), the first buffer plate 200 has a first size s1, and the first opening 210 has a second size s2, wherein 0.5*s1<s2<0.7*s2. Along the width direction of the first buffer plate 200 (i.e., the second direction F2), the first buffer plate 200 has a third size s3, and the first opening 210 has a fourth size s4, wherein 0.4*s3<s4<0.6*s3. In actual operation, the design of the second buffer plate 300, the third buffer plate 500, and the fourth buffer plate 600 can refer to the first buffer plate 200 to improve the etching gas flow field in the chamber 100, which will not be described in detail here.
[0034] In one embodiment, during the etching process, the potential of the first electrode 410 is a fixed potential, such as a ground potential. The ground potential is used as an example below, but is not limited thereto. The first buffer plate 200 and the second buffer plate 300 may be metal plates, such as Figure 2 As shown, the etching device 10 also has a plurality of first metal support members 700, which are connected and disposed below the first buffer plate 200 and the second buffer plate 300 and are grounded. The first buffer plate 200 and the second buffer plate 300 connected thereto are grounded through the grounding of the plurality of first metal support members 700, and the first buffer plate 200 and the second buffer plate 300 are grounded, and the first electrode 410 is connected to the first buffer plate 200 and the second buffer plate 300, and the potential of the first electrode 410 is the ground potential. In other embodiments, the grounding connection of the third buffer plate 500 and the sixth buffer plate 600 can be similar to that of the first buffer plate 200 and the second buffer plate 300, and will not be described in detail.
[0035] Compared to Figure 1Compared with the prior art shown in FIG. 1 , in the present invention, since each buffer plate is provided with openings on each side adjacent to the first electrode 410, each side adjacent to the first electrode 410 is no longer completely connected to the corresponding buffer plate, so that the connection / contact area between the first electrode 410 and each buffer plate becomes smaller, which may affect the potential stability of the first electrode 410. Therefore, in one embodiment, as Figure 3 As shown, the etching device 10 further includes a first auxiliary plate 800 and at least one second metal support member (not shown), the first auxiliary plate 800 is a metal plate and is disposed adjacent to a first corner formed by the first sidewall 101 and the second sidewall 102, that is, the first auxiliary plate 800 is disposed adjacent to a corner of the first electrode 410, and the corner of the first electrode 410 is connected to the first auxiliary plate 800, and at least one second metal support member is connected and disposed below the first auxiliary plate 800 and is grounded. Since the first electrode 410 is additionally connected to the first auxiliary plate 800, the path and area for the first electrode 410 to be connected to the ground potential are increased, thereby ensuring the potential stability of the first electrode 410.
[0036] In one embodiment, the etching apparatus 10 may include a plurality of first auxiliary plates 800 and a plurality of second metal support members, wherein the plurality of first auxiliary plates 800 may be metal plates and are respectively disposed at a plurality of corners of the chamber 100 and connected to support the first electrode 410, and each second metal support member is connected to and disposed under a corresponding first auxiliary plate 800 and is grounded. For example, when the first electrode 410 is rectangular, the first auxiliary plates 800 and the corresponding second metal support members are respectively disposed at the four corners of the first electrode 410, and the first electrode 410 is added and connected to each of the first auxiliary plates 800 to be grounded, thereby ensuring the potential stability of the first electrode 410.
[0037] In the etching equipment of the utility model, each buffer plate is cut with an opening on one side close to the first electrode. The structure of each opening can improve the etching gas flow field in the chamber, avoid the problem that plasma gathers at the side of the first electrode and causes the etching rate of the object to be etched to be too fast, resulting in excessive etching of the corresponding film layer, thereby improving product quality.
[0038] Of course, the present invention may have many other embodiments. Without departing from the spirit and essence of the present invention, technicians familiar with the field may make various corresponding changes and deformations based on the present invention, but these corresponding changes and deformations should all fall within the scope of protection of the claims attached to the present invention.
Claims
1. An etching device, characterized in that include: A chamber having a top and a bottom opposite to each other, and a first side wall and a second side wall connected between the top and the bottom, wherein the first side wall is adjacent to the second side wall; A first electrode is located in the chamber and disposed adjacent to the bottom, the first electrode having a first side edge and a second side edge adjacent to each other, the first side edge is opposite to the first side wall, the second side edge is opposite to the second side wall, the first side edge extends along a first direction, the second side edge extends along a second direction, and the first direction intersects the second direction; A first buffer plate is disposed adjacent to the bottom, the first buffer plate is connected to the first side wall and the first side edge, and the first buffer plate has a first opening corresponding to the first side edge; as well as A second buffer plate is disposed adjacent to the bottom, the second buffer plate is connected to the second side wall and the second side edge, and the second buffer plate has a second opening corresponding to the second side edge; Part of the vertical projection of the first side on the bottom overlaps with the vertical projection of the first opening on the bottom, so that at least part of the first opening is exposed to the first electrode, and part of the vertical projection of the second side on the bottom overlaps with the vertical projection of the second opening on the bottom, so that at least part of the second opening is exposed to the first electrode.
2. The etching equipment according to claim 1, characterized in that Along the length direction of the first buffer plate, the first buffer plate has a first size s1, and the first opening has a second size s2, wherein 0.5*s1<s2<0.7*s2.
3. The etching equipment according to claim 1, characterized in that Along the width direction of the first buffer plate, the first buffer plate has a third size s3, and the first opening has a fourth size s4, wherein 0.4*s3<s4<0.6*s3.
4. The etching equipment according to claim 1, characterized in that The first buffer plate and the second buffer plate are metal plates. The etching equipment also has a plurality of first metal support members, which are connected and arranged below the first buffer plate and the second buffer plate and connected to a fixed potential.
5. The etching equipment according to claim 4, characterized in that The etching equipment also includes a first auxiliary plate and at least one second metal support member. The first auxiliary plate is a metal plate. The first auxiliary plate is arranged adjacent to a corner formed by the first side wall and the second side wall. The first electrode is connected to the first auxiliary plate. The at least one second metal support member is connected and arranged under the first auxiliary plate and is connected to a fixed potential.
6. The etching equipment according to claim 1, characterized in that The etching equipment also has a third buffer plate and a fourth buffer plate. The third buffer plate and the first buffer plate are symmetrically arranged relative to the first electrode, and the fourth buffer plate and the second buffer plate are symmetrically arranged relative to the first electrode.
7. The etching equipment according to claim 6, characterized in that The etching equipment also includes multiple first auxiliary plates and multiple second metal support members. The multiple auxiliary plates are metal plates and are respectively arranged at multiple corners of the chamber. The first electrode is connected to the multiple first auxiliary plates. Each second metal support member is connected and arranged under the corresponding first auxiliary plate and connected to a fixed potential.
8. The etching equipment according to claim 1, characterized in that A groove is formed in the middle area of the first buffer plate to serve as the first opening.
9. The etching equipment according to claim 8, characterized in that The first electrode adjacent to the first side edge is connected and supported on the first buffer plate, a portion of the first opening is located under the first electrode, and a portion of the first opening is exposed to the first electrode.
10. The etching equipment according to claim 8, characterized in that The first electrode adjacent to the first side is connected and supported on the first buffer plate, and a vertical projection of a portion of the first side on the bottom is aligned with a vertical projection of a side of the first opening adjacent to the first electrode on the bottom.