Transistor and biosensor
By introducing the design of IGZO layer and organic semiconductor layer in VFET, the integration and selectivity problems of biosensors are solved, the response speed and sensitivity are improved, and the needs of modern biological detection are met.
Patent Information
- Application Number
- CN202421902988.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-07
- Publication Date
- 2025-07-04
- Estimated Expiration
- 2034-08-07
AI Technical Summary
Existing field-effect transistor (FET)-based biosensors have poor integration, poor selectivity for target markers, and insufficient response speed and sensitivity, making it difficult to meet the needs of modern biological detection.
Indium gallium zinc oxide (IGZO) layer and organic semiconductor layer are introduced into vertical field effect transistors (VFETs). By partially curing antibodies in the organic semiconductor layer and having no overlap with the IGZO layer, the integration of the transistor and the selectivity of the target markers are enhanced, and the response speed and sensitivity are enhanced through the electron transfer performance of the organic semiconductor layer.
It effectively increases the integration of the mid-field effect tube of biosensor, improves the selectivity of target markers, and further improves the response speed and sensitivity of biosensors.
Smart Images
Figure CN223067458U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of biological detection technologies, and more specifically, to transistors and biosensors. Background Art
[0002] With the development of biosensor technologies, biosensors based on field effect transistors (FETs) have gradually become important components in biological detection technologies.
[0003] However, currently, biosensors based on FETs still have problems such as poor integration and poor selectivity of FETs for target markers. Moreover, in order to adapt to the application scenarios of modern biological detection, the response speed and sensitivity of biosensors need to be further improved. Summary of the Invention
[0004] This application provides a transistor and a biosensor. By introducing an indium gallium zinc oxide (IGZO) layer and an organic semiconductor layer into a vertical field effect transistor (VFET), it is possible to effectively increase the integration of field effect transistors in the biosensor, improve the selectivity for target markers, and further improve the response speed and sensitivity of the biosensor.
[0005] In a first aspect, a transistor is provided. The transistor includes: a first metal layer, which serves as the first electrode of the transistor; an organic semiconductor layer, which is located above the first metal layer. The organic semiconductor layer includes charged groups. A first part of the organic semiconductor layer is attached with carboxyl functional groups and immobilized with a first antibody, and the first antibody is used to bind to a first marker in a test sample; an IGZO layer, which is located above a second part of the organic semiconductor layer 120, where the first part and the second part do not overlap; a second metal layer, which is located above the IGZO layer, and the second metal layer serves as the second electrode of the transistor.
[0006] In combination with the first aspect, in certain implementation manners of the first aspect, the organic semiconductor layer includes: poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS), copper(II) hexadecafluorophthalocyanine (F16CuPc), polyaniline (PANI), or polythiophene (PT).
[0007] In combination with the first aspect, in certain implementation manners of the first aspect, the above-mentioned first antibody is immobilized on the first part by attaching to the carboxyl functional groups of the first part.
[0008] In combination with the first aspect, in certain implementations of the first aspect, the sum of the thicknesses of the organic semiconductor layer and the IGZO layer is in the range of [30 nm, 200 nm].
[0009] In combination with the first aspect, in certain implementations of the first aspect, the first metal layer and the second metal layer include: gold (Au), aluminum (Al), or molybdenum (Mo).
[0010] In combination with the first aspect, in certain implementations of the first aspect, the transistor is a VFET.
[0011] In a second aspect, a transistor is provided. The transistor includes: a first metal layer serving as the first electrode of the transistor; an IGZO layer located above a first portion of the first metal layer, with a thiol functional group attached to the surface of a second portion of the first metal layer adjacent to the first portion, and a first antibody immobilized thereon, the first antibody being for binding to a first marker in a test sample; and a second metal layer located above the IGZO layer, the second metal layer serving as the second electrode of the transistor.
[0012] In combination with the second aspect, in certain implementations of the second aspect, the first metal layer and the second metal layer include: Au, Al, or Mo.
[0013] In combination with the second aspect, in certain implementations of the second aspect, the transistor is a VFET.
[0014] In a third aspect, a biosensor is provided. The biosensor includes a transistor in any possible implementation of the transistor design in the first aspect or the second aspect above. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] Figure 1 is a schematic structural diagram of a transistor 100 proposed in an embodiment of the present application;
[0016] Figure 2 is a top view of a transistor 100 proposed in an embodiment of the present application;
[0017] Figure 3 is a schematic structural diagram of another transistor 200 proposed in an embodiment of the present application;
[0018] Figure 4 is a top view of another transistor 200 proposed in an embodiment of the present application;
[0019] Figure 5 is a schematic flowchart of a method 500 for fabricating a transistor proposed in an embodiment of the present application;
[0020] Figure 6It is a schematic flowchart of another method 600 for manufacturing a transistor proposed by an embodiment of the present application. Detailed implementation manners
[0021] Next, the technical solutions in the present application will be described with reference to the accompanying drawings.
[0022] The embodiments of the present application will present various aspects, embodiments or features around a system including multiple devices, components, modules, etc. It should be understood and appreciated that each system may include additional devices, components, modules, etc., and / or may not include all the devices, components, modules, etc. discussed in conjunction with the accompanying drawings. In addition, combinations of these solutions may also be used.
[0023] In addition, in the embodiments of the present application, words such as "exemplary" and "for example" are used to indicate examples, illustrations or explanations. Any embodiment or design solution described as "exemplary" in the embodiments of the present application should not be construed as being more preferred or having more advantages than other embodiments or design solutions. Rather, the use of the word "exemplary" is intended to present concepts in a specific manner.
[0024] The business scenarios described in the embodiments of the present application are for more clearly illustrating the technical solutions of the embodiments of the present application, and do not constitute a limitation on the technical solutions provided by the embodiments of the present application. Those of ordinary skill in the art can know that with the evolution of technology and the emergence of new business scenarios, the technical solutions provided by the embodiments of the present application are equally applicable to similar technical problems.
[0025] The reference to "one embodiment" or "some embodiments" etc. described in this specification means that a specific feature, structure or characteristic described in conjunction with the embodiment is included in one or more embodiments of the present application. Thus, statements such as "in one embodiment", "in some embodiments", "in other some embodiments", "in still other embodiments" etc. that appear in different places in this specification are not necessarily all referring to the same embodiment, but mean "one or more but not all embodiments", unless otherwise specifically emphasized in other ways. The terms "comprising", "including", "having" and their variants all mean "including but not limited to", unless otherwise specifically emphasized in other ways.
[0026] In the embodiments of the present application, "at least one" means one or more, and "a plurality" means two or more. "And / or" describes the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can mean: including the case where A exists alone, A and B exist simultaneously, and B exists alone, where A and B can be singular or plural. The character " / " generally represents an "or" relationship between the associated objects before and after. "At least one (item)" or its similar expression refers to any combination of these items, including any combination of single item (s) or plural items (s). For example, at least one (item) of a, b, or c can mean: a, b, c, a - b, a - c, b - c, or a - b - c, where a, b, and c can be single or multiple.
[0027] In the description of the embodiments of the present application, the orientation or positional relationship indicated by terms such as "upper", "lower", "left", "right", "inner", "outer", "vertical", "horizontal", etc. is defined relative to the orientation or position in which the components in the drawings are schematically placed. It should be understood that these directional terms are relative concepts, which are used for relative description and clarification, rather than indicating or implying that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation. It can change accordingly with the change of the orientation in which the components in the drawings are placed, and thus cannot be understood as a limitation to the present application.
[0028] In the embodiments of the present application, the same reference numeral is used to represent the same component or the same part. For the same parts in the embodiments of the present application, only one of the parts or components may be marked with the reference numeral in the figure. It should be understood that the reference numeral also applies to other identical parts or components. In addition, the components in the drawings are not drawn to scale, and the dimensions and sizes of the components shown in the figure are only exemplary and should not be understood as a limitation to the present application.
[0029] Biological detection technology is an important technology in disease diagnosis. The disease diagnosis and treatment plan is usually specified based on the biological detection results. Therefore, the efficiency of biological detection directly affects the effect of disease diagnosis and treatment. For example, for some acute diseases, if the biological detection efficiency is low, the best time for rescue may be missed.
[0030] With the development of biosensor technology, FET - based biosensors have attracted much attention due to their high sensitivity, real - time monitoring ability, and miniaturization characteristics. Such biosensors can utilize the change in the electrical properties of semiconductor materials to detect the binding of specific biomolecules, thereby realizing the detection of specific biomarkers (biomarkers containing specific biomolecules), such as the detection of the concentration of specific biomolecules in the sample to be measured.
[0031] However, taking the application scenario of the FET-based biosensor for detecting neurodegenerative markers in blood as an example at the current stage, the FET-based biosensor faces corresponding challenges in many aspects.
[0032] First of all, the FETs applied to biosensors at the current stage are mainly planar-structured FETs, and there are limitations in the integration density of planar-structured FETs, which makes it difficult for FETs to be applied to biosensors with high-density biological detection arrays. Secondly, due to the complexity of blood samples, it is difficult for the FET-based biosensor to select neurodegenerative markers from complex blood samples. In this process, there is usually a binding of FETs to non-specific markers, thus reducing the detection accuracy. In addition, in order to adapt to the application scenarios of modern biological detection, the response speed and sensitivity of the biosensor need to be further improved. Solving the problems in these three aspects is particularly important for achieving rapid and accurate clinical diagnosis.
[0033] In view of this, the embodiments of the present application propose a transistor applied to a biosensor. Based on the special structure of the transistor, it can effectively increase the integration of field effect transistors in the biosensor, improve the selectivity for target markers, and further improve the response speed and sensitivity of the biosensor.
[0034] Figure 1 It is a schematic structural diagram of a transistor 100 proposed by the embodiments of the present application.
[0035] Figure 2 It is a top view of a transistor 100 proposed by the embodiments of the present application.
[0036] Referring to Figure 1 and Figure 2 as shown, the above-mentioned transistor 100 includes:
[0037] A first metal layer 110, which serves as the first electrode of the transistor;
[0038] An organic semiconductor layer 120, which is located above the first metal layer 110. The organic semiconductor layer 120 includes charged groups. A first antibody is immobilized on a first part 121 of the organic semiconductor layer 120, and the first antibody is used to bind to the first marker in the test sample;
[0039] An IGZO layer 130, which is located above a second part of the organic semiconductor layer 120, and there is no overlap between the first part 121 and the second part 122;
[0040] A second metal layer 140, which is located above the IGZO layer 130, and the second metal layer 140 serves as the second electrode of the transistor.
[0041] It should be understood that since the organic semiconductor layer includes charged groups and is an organic substance, the introduction of the organic semiconductor layer can effectively improve the electron transport performance of the transistor.
[0042] In some possible embodiments, the above-mentioned first antibody is immobilized on the first portion 121 of the organic semiconductor layer by attaching to the carboxyl functional group of the first portion 121 of the organic semiconductor layer.
[0043] In some possible embodiments, a relatively simple aqueous phase modification method can be used to introduce carboxyl functional groups into the organic semiconductor layer, which helps the first antibody to be more easily immobilized on the organic semiconductor layer. During the process of immobilizing the antibody, the above-mentioned carboxyl functional group can combine with the amino group or other functional groups on the antibody through a covalent bond to form a stable chemical bond, which can fix the antibody on the solid-phase carrier, that is, the first portion 121 of the above-mentioned organic semiconductor layer 120. Among them, the first portion 121 can be the surface of the first portion 121 of the organic semiconductor layer 120. Based on the above treatment of the organic semiconductor layer, when the transistor detects the test sample, the organic semiconductor layer can quickly and accurately capture the first marker in the test sample. Moreover, the difficulty of immobilizing the antibody on the first portion 121 of the organic semiconductor layer 120 is relatively low and the success rate is relatively high, which helps to reduce the preparation difficulty of the transistor.
[0044] In addition, the above-mentioned first marker can be understood as the target marker to be bound by the biosensor to which the above-mentioned transistor is applied.
[0045] In some possible embodiments, there is a corresponding relationship between the above-mentioned first antibody and the above-mentioned first marker. When the biosensor is used to detect other markers, such as the second marker, then the antibody immobilized in the IGZO layer 130 also needs to be adaptively adjusted, such as the second antibody. Correspondingly, the functional groups introduced into the IGZO layer 130 may also need to be adaptively adjusted.
[0046] It should be noted that in the embodiments of the present application, an organic semiconductor layer 120 is introduced into the transistor 100. Since the electron transport ability of the organic semiconductor layer 120 is relatively strong, after the transistor 100 contacts the marker in the test sample, although the first antibody of the organic semiconductor layer 120 binds to the first marker, changing the material structure on the surface of the organic semiconductor layer 120, this may reduce the electron transport ability of the transistor 100. However, due to the introduction of the organic semiconductor layer 120 and the contact between the organic semiconductor layer 120 and the IGZO layer 130, the electron transport ability of the transistor 100 is further increased, thereby helping to offset the problem of the decrease in electron transport ability caused by the binding of the first antibody of the organic semiconductor layer 120 to the first marker, ensuring that the switching characteristics of the transistor 100 based on electron transport are not affected.
[0047] In some possible embodiments, the above-mentioned first metal layer 110 and second metal layer 140 include materials of at least one of the following elements: Au, Al, Mo, etc.
[0048] In some possible embodiments, the processes for depositing the first metal layer 110 and the second metal layer 140 are different, and the thicknesses of the first metal layer and the second metal layer can also be different, that is, they can be adaptively adjusted within a thickness range, such as [30nm, 200nm].
[0049] In some possible embodiments, when the above-mentioned first electrode is the lower electrode of the transistor 100, the above-mentioned second electrode is the upper electrode of the transistor 100; or when the above-mentioned first electrode is the upper electrode of the transistor 100, the above-mentioned second electrode is the lower electrode of the transistor 100.
[0050] In some possible embodiments, the processes for depositing the IGZO layer 130 are different, and the thickness of the IGZO layer 130 can also be different, that is, it can be adaptively adjusted within a thickness range, such as [20nm, 100nm].
[0051] It should be understood that since the IGZO layer 130 is located above the second part 122 of the organic semiconductor 120 and the second part 122 does not overlap with the first part 121, it can be seen that the area of the IGZO layer 130 is smaller than the area of the organic semiconductor 120.
[0052] In some possible embodiments, referring to the above Figure 1 As shown, the above-mentioned organic semiconductor layer 120 can completely cover the above-mentioned first metal layer 110, that is, the area of the first metal layer 110 is smaller than the area of the organic semiconductor layer 120.
[0053] In some possible embodiments, referring to the above Figure 1As shown, the second metal layer 140 and the IGZO layer 130 may be partially stacked, that is, a part of the second metal layer 140 covers a part of the IGZO layer 130.
[0054] In some possible embodiments, the process of depositing the first metal layer 110 and the process of depositing the second metal layer 140 may be the same or different.
[0055] Based on the above technical solution, introducing the organic semiconductor layer 120 and the IGZO layer 130 into the transistor can effectively improve the response speed and sensitivity of the transistor 100, and curing antibodies in the organic semiconductor layer 120 not only helps the antibodies cured in the transistor 100 to effectively bind to the corresponding markers, but also ensures that the electron transport characteristics of the transistor 100 are not affected by the combination of the antibodies cured in the organic semiconductor layer 120 and the markers. Then, applying the transistor 100 proposed in this solution to a biosensor can effectively improve the selectivity of the biosensor to the target marker, minimize the combination of the biosensor with non-specific substances (i.e., non-target markers), and further improve the response speed and sensitivity of the biosensor.
[0056] In some possible embodiments, the organic semiconductor layer 120 includes: PEDOT:PSS, F16CuPc, PANI, or PT.
[0057] In some possible embodiments, the organic semiconductor layer 120 may simultaneously include multiple organic materials provided in the above embodiments.
[0058] Among them, PEDOT:PSS is a polymer conductive polymer composed of two substances, PEDOT and PSS. PEDOT is a polymer of 3,4-ethylenedioxythiophene monomer (EDOT), and PSS serves as a dopant to improve the solubility and conductivity of PEDOT. These two substances together form an aqueous solution with good conductivity. Therefore, the organic semiconductor layer 120 deposited in the transistor 100 using PEDOT:PSS has good conductivity, that is, it can improve the electron transport ability of the transistor 100.
[0059] Accordingly, the preparation of the organic semiconductor layer 120 based on PEDOT:PSS generally includes the following steps and conditions: First, select a suitable substrate and perform cleaning pretreatment; Second, place the substrate in a chemical vapor deposition (CVD) reactor, and introduce a protective gas (such as argon or nitrogen) for heating at a specified temperature; Then, introduce a carbon-containing precursor gas (for example, an organic vapor containing a PEDOT:PSS precursor) and a reducing gas (such as hydrogen), and carry out a chemical reaction under controlled temperature and pressure conditions to deposit PEDOT:PSS on the substrate surface to form a thin film; After the reaction is completed, stop the gas supply, cool and take out the substrate to obtain a PEDOT:PSS thin film.
[0060] It should be understood that the above entire process requires precise control of parameters such as temperature, pressure, gas flow rate, and reaction time to ensure the quality and performance of the thin film.
[0061] F16CuPc is an organic semiconductor material with a relatively high electron mobility, which means that the organic semiconductor layer 120 deposited based on F16CuPc can quickly transfer electrons to the electrodes or other molecules, thereby improving the electron transport ability of the transistor 100, and further enhancing the response speed and efficiency of the transistor 100.
[0062] PANI is a conductive polymer material. Accordingly, the organic semiconductor layer 120 deposited based on PANI can improve the conductive performance of the transistor 100. In addition, the PANI used to deposit the organic semiconductor layer 120 can also be doped to further improve the conductive performance of the finally deposited organic semiconductor layer 120. Common doping materials include inorganic acids (such as hydrochloric acid, sulfuric acid, etc.) and organic acids (such as dodecylbenzenesulfonic acid, dinonylnaphthalenesulfonic acid, etc.). Similarly, for PT, the conductive performance can be improved by doping metal ions (such as Mn2+, Co2+, Ni 2 +, Cu2+, etc.).
[0063] Based on the above technical solutions, a variety of basic materials that can be used as the organic semiconductor layer 120 are provided, which means that there are also a variety of preparation processes for depositing the organic semiconductor layer 120. It can be seen that the transistor 100 proposed in the embodiments of the present application is also relatively flexible in terms of preparation process, that is, the conductive performance of the transistor 100 can be optimized through diverse preparation conditions.
[0064] In some possible embodiments, the sum of the thicknesses of the above organic semiconductor layer 120 and the above IGZO layer 130 is in the range of [30nm, 200nm].
[0065] It should be understood that the sensitivities of different biosensors can also be different. Even for multiple biosensors used to detect the same target biomarker, there can be differences in their sensitivities, and they are applicable to various specific scenarios. This means that the sensitivity of the transistor can also vary within a certain range. Since the sensitivity of the transistor is related to the distance between the two electrodes, the sensitivity of the transistor can be determined by changing the distance between the two electrodes.
[0066] However, in the existing transistors for biosensors, the main layer between the two electrodes is the IGZO layer. However, the thickness of the IGZO layer is usually in the range of [20nm, 100nm], and the yield rate of the IGZO layer with a thickness of 100nm is relatively low, and the implementation difficulty is high. Therefore, the adjustable range of the sensitivity of the existing transistors is extremely limited.
[0067] In the embodiment of the present application, an organic semiconductor layer is introduced into the transistor. While satisfying the fast and accurate capture of the target biomarker by the transistor, it also expands the thickness range of the transistor, and further expands the sensitivity range of the transistor. Moreover, the preparation difficulty of the organic semiconductor layer with a thickness greater than 100nm is relatively simple, so the yield rate of the relatively thick organic semiconductor layer is also guaranteed.
[0068] Based on the above technical solution, the sum of the thicknesses of the organic semiconductor layer 120 and the IGZO layer 130 is in the range of [30nm, 200nm], so that the distance between the two electrodes of the transistor 100 can be adjusted in the range of [100nm, 200nm], thereby expanding the sensitivity range of the transistor 100, enabling the transistor 100 to be applicable to more application scenarios, and increasing the versatility of the transistor 100.
[0069] In some possible embodiments, the transistor 100 proposed in the embodiment of the present application is a VFET.
[0070] It should be understood that the VFET has an ultra-short channel length, that is, the VFET has a nanoscale channel length in the vertical direction, which enables the VFET to achieve a high-performance transistor structure in a smaller space. This ultra-short channel length helps to improve the integration density and performance of the transistor.
[0071] Based on the above technical solution, the structure of the transistor 100 is designed as a vertical structure. When the transistor 100 is applied to a biosensor, it can help increase the number of transistors 100 integrated in the biosensor, thereby improving the overall performance of the biosensor.
[0072] Figure 3 It is a schematic structural diagram of another transistor 200 proposed in the embodiment of the present application.
[0073] Figure 4 It is a top view of another transistor 200 proposed in an embodiment of the present application.
[0074] In some possible embodiments, the transistor 200 includes:
[0075] A first metal layer 110, which serves as the first electrode of the transistor;
[0076] An indium gallium zinc oxide (IGZO) layer 130, the IGZO layer 130 is located above a first part of the first metal layer 110, and a second part of the first metal layer 110 adjacent to the first part is cured with a first antibody, and the first antibody is used to bind to a first marker in a test sample;
[0077] A second metal layer 140, the second metal layer 140 is located above the IGZO layer 130, and the second metal layer 140 serves as the second electrode of the transistor.
[0078] In some possible embodiments, the above-mentioned first antibody is cured on the surface of the second part of the first metal layer 110 through a mercapto functional group attached to the surface of the second part of the first metal layer 110.
[0079] It should be understood that compared with the transistor 100, no organic semiconductor layer is introduced in the transistor 200, and the object of surface modification is replaced with the surface of the second part of the first metal layer 110, and the introduced functional group is replaced with a mercapto functional group.
[0080] Reference Figure 4 It can be seen that compared with the transistor 100, the upper surface area of the first metal layer 110 of the transistor 200 is larger than the lower surface area of the IGZO layer, and the object of surface modification of the transistor 200 can be Figure 4 the striped shaded part in, for curing the first antibody. During the process of antibody curing, the mercapto functional group can be used to connect the first antibody to the solid-phase carrier (i.e., the surface of the second part of the first metal layer 110). Through specific chemical reactions, such as disulfide bond exchange or covalent cross-linking, the first antibody can be fixed on the solid-phase carrier.
[0081] It should be understood that the deposition processes and material uses of the above-mentioned first metal layer 110, IGZO layer 130, and second metal layer 140 are the same as the corresponding descriptions in the transistor 100 in the foregoing embodiments, and will not be repeated here.
[0082] In some possible embodiments, the above-mentioned transistor 200 can also be a VFET.
[0083] Based on the above technical solution, applying the transistor 200 proposed in this solution to a biosensor can effectively improve the selectivity of the biosensor for the target biomarker, minimize the combination of the biosensor with non-specific substances (i.e., non-target biomarkers), and further improve the transistor integration, response speed, and sensitivity of the biosensor.
[0084] Correspondingly, an embodiment of the present application also proposes a preparation method for preparing the above-mentioned transistor 100 and transistor 200.
[0085] Figure 5 It is a schematic flowchart of a method 500 for preparing a transistor proposed in an embodiment of the present application.
[0086] The method 500 is used to prepare the transistor 100 proposed in an embodiment of the present application.
[0087] Reference Figure 5 As shown, the method 500 includes the following steps:
[0088] S510: Deposit a first metal layer, which serves as the first electrode of the transistor.
[0089] In some possible embodiments, the above-mentioned first metal layer can be deposited on a silicon wafer.
[0090] S520: Deposit an organic semiconductor layer on the first metal layer. The organic semiconductor layer includes charged groups.
[0091] In some possible embodiments, the deposition method of the above-mentioned organic semiconductor layer can adopt the CVD method or the plasma-enhanced chemical vapor deposition (PECVD) method to deposit the organic semiconductor layer on the first metal layer.
[0092] S530: Perform surface modification on the organic semiconductor layer to attach carboxyl functional groups to the first part of the organic semiconductor layer.
[0093] S540: Immobilize the first antibody on the first part, and the first antibody is used to bind to the first biomarker in the test sample.
[0094] S550: Deposit an IGZO layer on the second part of the organic semiconductor layer, and the first part and the second part do not overlap.
[0095] In some possible embodiments, the thickness of the IGZO layer is related to the deposition method used, that is, the thickness of the IGZO layer may be different depending on the process used to deposit the IGZO layer, that is, it can be adaptively adjusted within a thickness range, such as [20nm, 100nm]. The methods for depositing the IGZO layer include: sol-gel method, chemical vapor deposition method or solution method.
[0096] S560: depositing a second metal layer on the IGZO layer, the second metal layer serving as a second electrode of the transistor.
[0097] In some possible embodiments, the thickness of the first metal layer and the second metal layer is related to the deposition method used, that is, the processes used to deposit the first metal layer and the second metal layer are different, and the thickness of the first metal layer and the second metal layer may also be different, that is, they can be adaptively adjusted within a thickness range, for example, [30nm, 200nm]. The methods for depositing the first metal layer and the second metal layer include: thermal evaporation technology, electron beam evaporation technology, magnetron sputtering technology or evaporation technology. When the first electrode is the lower electrode of the transistor, the above-mentioned first metal layer can be deposited on a silicon wafer.
[0098] In some possible embodiments, during the process of manufacturing the same transistor, the method of depositing the second metal layer may be different from the method of depositing the first metal layer.
[0099] It should be understood that, regarding the material extension of each dielectric layer involved in the above-mentioned preparation process, please refer to the corresponding description of the transistor 100 above, and will not be repeated here.
[0100] Based on the above technical solution, by introducing an organic semiconductor layer and an IGZO layer into the transistor, and performing surface modification and solidifying the first antibody on the first part of the organic semiconductor layer, the basic biological detection function of combining the transistor with the first marker is realized, while the electronic transmission performance of the transistor is enhanced, which helps to improve the response speed and sensitivity of the transistor, and can minimize the combination of the transistor with non-specific substances (i.e., non-target markers).
[0101] In some possible embodiments, the method 500 may further include the following steps: according to the expected sensitivity of the transistor, the thickness of the organic semiconductor layer and the IGZO layer is determined, the sum of the thickness of the organic semiconductor layer and the IGZO layer is in the range of [30nm, 200nm], and the sum of the thickness of the organic semiconductor layer and the IGZO layer is negatively correlated with the expected sensitivity. After the thickness of the organic semiconductor layer and the IGZO layer is determined, the organic semiconductor layer and the IGZO layer are deposited using a corresponding preparation method.
[0102] Based on the above technical solution, the sum of the thicknesses of the above organic semiconductor layer and the above IGZO layer is in the range of [30 nm, 200 nm], so that the distance between the two electrodes of the transistor 100 can be adjusted in the range of [100 nm, 200 nm], and the thicknesses of the above organic semiconductor layer and the above IGZO layer can be flexibly configured according to the desired sensitivity of the transistor, thereby expanding the sensitivity range of the transistor, enabling the transistor to be applicable to more application scenarios and increasing the versatility of the transistor.
[0103] In some possible embodiments, the above S540 can be implemented in the following 3 ways:
[0104] Surface-modify the first part of the organic semiconductor layer by the UVO treatment method;
[0105] Alternatively, surface-modify the first part of the organic semiconductor layer by the oxygen plasma treatment method to introduce hydroxyl functional groups, and carboxylate the hydroxyl functional groups with carboxylic anhydride;
[0106] Alternatively, treat the first part of the organic semiconductor layer with cation exchange resin.
[0107] Among them, the UVO treatment method is also called the UVO radiation method. The principle of surface-modifying the first part of the organic semiconductor layer based on this method is as follows: Under the combined action of ultraviolet light and ozone, the surface molecular chains of the first part of the organic semiconductor layer can be excited and undergo oxidation reactions. The strong oxidizing property of ozone causes some chemical bonds in the surface molecular chains of the first part of the organic semiconductor layer to break to form hydroxyl functional groups, and then the hydroxyl functional groups are carboxylated with carboxylic anhydride to form carboxyl functional groups.
[0108] The principle of surface-modifying the IGZO layer based on the oxygen plasma treatment method is as follows: The oxygen plasma contains a large number of active oxygen particles (such as oxygen atoms, oxygen molecular ions, etc.). These particles have high energy and reactivity. When the surface of the first part of the organic semiconductor layer is exposed to the oxygen plasma, these active oxygen particles will chemically react with the molecules on the surface of the first part of the organic semiconductor layer, resulting in the breakage and recombination of surface chemical bonds to form carboxyl functional groups.
[0109] In some possible embodiments, the oxygen plasma treatment can also be performed on the multi-layer structure of the first metal layer, the organic semiconductor layer, and the IGZO layer as a whole.
[0110] Cation exchange resin is a polymer material containing acidic functional groups (such as sulfonic acid groups, carboxyl groups, etc.). It can exchange cations in an aqueous solution, and these functional groups are inside the resin.
[0111] Based on the above technical solutions, a variety of preparation schemes are provided to introduce carboxyl functional groups into the first part (such as the surface of the first part) of the organic semiconductor layer, so as to achieve surface modification of the first part of the organic semiconductor layer, thereby enhancing the flexibility of the transistor preparation process proposed in the embodiments of the present application.
[0112] In some possible embodiments, the above S550 can be achieved by a covalent bonding method, and the specific steps of this covalent bonding method are as follows:
[0113] Coat biotin on the first part of the carboxylated organic semiconductor layer. The biotin includes a biotinylated first antibody, and the chemical bond of the first antibody combines with the chemical bond of the carboxyl functional group, so that the first antibody is fixed on the first part of the organic semiconductor layer;
[0114] Alternatively, use EDC and NHS to fix the first antibody on the first part of the carboxylated organic semiconductor layer. The first antibody can be an antibody with an amino group. Among them, the combination of EDC and NHS is commonly used in cross-linking reactions in the field of biochemistry and can connect molecules containing amino groups (such as the above first antibody) with molecules containing carboxyl groups (such as the above carboxylated IGZO surface). Among them, EDC is a zero-length cross-linking agent that can effectively catalyze the reaction between carboxyl groups and amino groups in an aqueous solution to form stable amide bonds. However, the reaction rate of EDC itself with carboxyl groups is relatively slow, and the formed intermediate may be unstable. Therefore, NHS is often added as an auxiliary reagent to accelerate the reaction of EDC with carboxyl groups to generate a more stable intermediate, which then reacts with amino groups to form an amide bond, and this amide bond can fix the first antibody on the first part of the organic semiconductor layer;
[0115] Alternatively, use glutaraldehyde as a cross-linking agent to fix the first antibody on the first part of the carboxylated organic semiconductor layer. Among them, glutaraldehyde is a small molecule compound containing two aldehyde groups, and both of these aldehyde groups can react with the free amino groups of biomolecules such as proteins or enzymes to form Schiff bases, thereby achieving intermolecular cross-linking. During the process of fixing the first antibody, glutaraldehyde first reacts with the carboxyl groups on the first part of the organic semiconductor layer, and then the aldehyde groups that have not reacted with the carboxyl groups react with the first antibody, thereby fixing the first antibody on the first part of the organic semiconductor layer.
[0116] Based on the above technical solutions, a variety of preparation schemes are provided to fix the first antibody on the first part of the organic semiconductor layer, so as to achieve the function of combining the transistor with the first marker, thereby enhancing the flexibility of the transistor preparation process proposed in the embodiments of the present application.
[0117] In some possible embodiments, after the above S540, the following operations may further be performed: performing a chemical reaction using a carboxylic anhydride and the carboxyl functional groups attached to the first portion of the organic semiconductor layer, so that the carboxyl functional groups of the first portion of the organic semiconductor layer can be further activated.
[0118] In some possible embodiments, before activating the first portion of the organic semiconductor layer, a cleaning process may further be performed on the first portion of the organic semiconductor layer.
[0119] Based on the above technical solution, after surface modification of the first portion of the organic semiconductor layer to introduce carboxyl functional groups, further activation of the carboxyl functional groups by a carboxylic anhydride helps the first antibody to be more easily immobilized on the first portion of the organic semiconductor layer later.
[0120] Figure 6 It is a schematic flowchart of another method 600 for manufacturing a transistor proposed by an embodiment of the present application.
[0121] The method 600 is used to manufacture the transistor 200 proposed by an embodiment of the present application.
[0122] Reference Figure 6 As shown, the method 600 includes the following steps:
[0123] S610: Depositing a first metal layer, which serves as the first electrode of the transistor.
[0124] S620: Depositing an IGZO layer on the first portion of the first metal layer.
[0125] S630: Performing surface modification on a second portion adjacent to the first portion in the first metal layer to attach thiol functional groups to the second surface of the second portion in the first metal layer.
[0126] S640: Immobilizing a first antibody on the second surface, which is used to bind to a first marker in a test sample.
[0127] S650: Depositing a second metal layer on the IGZO layer, which serves as the second electrode of the transistor.
[0128] In some possible embodiments, the above S630 may be implemented by the following method:
[0129] Dissolving a compound containing thiol (such as mercaptoethylamine, mercaptoethanol, etc.) in a suitable solvent, such as deionized water or an organic solvent, to obtain a thiol compound solution. Then bringing the thiol compound solution into contact with the second surface of the first metal layer, and introducing thiol functional groups to the second surface of the first metal layer through a chemical reaction.
[0130] In some possible embodiments, the above S640 may be implemented in the following manner:
[0131] The first antibody is dissolved in a buffer, such as phosphate buffered saline (PBS), to prepare a first antibody solution, and then the first antibody solution is contacted with the second surface of the thiol-modified first metal layer, so that the first antibody is bound to the thiol group on the first metal layer through a chemical bond (such as the interaction of the Au-S bond).
[0132] In some possible embodiments, before the second surface of the first metal layer is modified, the second surface may be pretreated, and the pretreatment includes cleaning and activation to increase the activity of the thiol functional groups on the second surface.
[0133] It should be understood that the above method of depositing the first metal layer, the second metal layer and the IGZO layer may be the deposition method used in the above method of manufacturing the transistor 100 .
[0134] Based on the above technical solution, an organic semiconductor layer and an IGZO layer are introduced into the transistor, and the second surface adjacent to the lower surface of the IGZO layer in the first metal layer is surface modified and the first antibody is solidified, so as to realize the basic biological detection function of combining the transistor with the first marker, and at the same time, the electronic transmission performance of the transistor is enhanced, which helps to improve the response speed and sensitivity of the transistor, and can avoid the combination of the transistor with non-specific substances (i.e., non-target markers) as much as possible.
[0135] The embodiments of the present application also provide a biosensor, which includes any one of the transistors 100 or transistors 200 provided in the embodiments of the present application.
[0136] In addition, an embodiment of the present application also proposes a device for preparing a transistor, which includes a processor and a memory, wherein the processor and the memory are connected, wherein the memory is used to store program code, and the processor is used to call the program code to execute method 500 or method 600 proposed in the embodiment of the present application.
[0137] Those of ordinary skill in the art will appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of this application.
[0138] Those skilled in the art can clearly understand that for the convenience and brevity of description, the specific working processes of the systems, devices, and units described above can refer to the corresponding processes in the foregoing method embodiments and will not be elaborated herein.
[0139] In several embodiments provided in the present application, it should be understood that the disclosed systems, devices, and methods can be implemented in other ways. For example, the device embodiments described above are merely illustrative. For example, the division of the units is only a logical function division, and there may be other division methods in actual implementation. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the displayed or discussed couplings or direct couplings or communication connections to each other can be through some interfaces. The indirect couplings or communication connections of the devices or units can be in electrical, mechanical, or other forms.
[0140] The units described as separate components may or may not be physically separated. The components displayed as units may or may not be physical units, that is, they can be located in one place or distributed to multiple network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of this embodiment.
[0141] In addition, in each embodiment of the present application, the functional units can be integrated in a processing unit, or each unit can exist physically alone, or two or more units can be integrated in one unit.
[0142] If the functions are implemented in the form of software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present application, in essence, or the part that contributes to the prior art, or a part of this technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions for causing a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods described in each embodiment of the present application. The foregoing storage medium includes: various media such as USB flash drives, mobile hard disks, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical discs that can store program codes.
[0143] As described above, it is only the specific implementation manner of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present application can easily think of changes or substitutions, which should all be covered within the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims described above.
Claims
1. A transistor, characterized in that, Comprising: A first metal layer (110), the first metal layer (110) serving as the first electrode of the transistor; An organic semiconductor layer (120), the organic semiconductor layer (120) being located above the first metal layer (110), the organic semiconductor layer (120) including a charged group, a first portion (121) of the organic semiconductor layer (120) being cured with a first antibody for binding to a first marker in a test sample; An indium gallium zinc oxide IGZO layer (130), the IGZO layer (130) being located above a second portion (122) of the organic semiconductor layer (120), the first portion (121) and the second portion (122) having no overlap; A second metal layer (140), the second metal layer (140) being located above the IGZO layer (130), the second metal layer (140) serving as the second electrode of the transistor.
2. The transistor according to claim 1, wherein The first antibody is cured on the first portion by attaching to a carboxyl functional group of the first portion.
3. The transistor according to claim 1 or 2, characterized in that, The sum of the thicknesses of the organic semiconductor layer (120) and the IGZO layer (130) is in the range of [30 nm, 200 nm].
4. The transistor according to claim 1, characterized in that, The transistor is a vertical field effect transistor VFET.
5. A biosensor, characterized in that, Comprising the transistor according to any one of claims 1 to 4.