Laminated cell and photovoltaic module

Abstract

The utility model relates to a laminated cell and a photovoltaic module. The laminated cell comprises a top cell and a bottom cell which are mechanically laminated along a first direction, the top cell is a perovskite cell, and the bottom cell is an antimony selenide cell; the bottom cell comprises a transparent conductive layer, an antimony selenide light absorption layer, a first electrode and a first substrate which are stacked in the first direction, and the transparent conductive layer is closer to the top cell than the first electrode. According to the invention, the production cost of the laminated cell can be reduced.

Description

Technical Field

[0001] This application relates to the field of photovoltaic technology, and in particular to a tandem cell and a photovoltaic module. Background Technology

[0002] Organic-inorganic metal halide perovskite materials are suitable as light-absorbing layers in solar cells due to their excellent photoelectric properties and low cost. At the same time, the band gap of perovskite materials is adjustable, and they can be superimposed with other photovoltaic materials with different band gaps to form tandem solar cells, achieving extremely high photoelectric conversion efficiency.

[0003] Current tandem solar cells primarily use wide-bandgap perovskite cells as the top layer and narrow-bandgap crystalline silicon cells as the bottom layer. Although perovskite tandem solar cell structures based on crystalline silicon bottom cells have higher conversion efficiency, the manufacturing process of crystalline silicon cells is complex, increasing production costs. Utility Model Content

[0004] Based on this, this application provides a tandem battery and a photovoltaic module, which can reduce the production cost of tandem batteries.

[0005] In a first aspect, embodiments of this application provide a tandem solar cell, the solar cell comprising a top cell and a bottom cell mechanically stacked along a first direction, the top cell being a perovskite cell and the bottom cell being an antimony selenide cell;

[0006] The bottom cell includes a transparent conductive layer, an antimony selenide light-absorbing layer, a first electrode, and a first substrate stacked along a first direction, with the transparent conductive layer closer to the top cell than the first electrode.

[0007] In one embodiment, the bottom battery further includes a first functional layer and a second functional layer stacked together, wherein the first functional layer is located between the antimony selenide light-absorbing layer and the transparent conductive layer, and the second functional layer is located between the first functional layer and the transparent conductive layer.

[0008] In one embodiment, along the first direction, the size of the antimony selenide light-absorbing layer is between 600nm and 1200nm, the size of the second functional layer is between 50nm and 150nm, the size of the first functional layer is between 10nm and 50nm, and the size of the transparent conductive layer is between 50nm and 200nm.

[0009] Secondly, this application provides a photovoltaic module, which includes a battery string layer, the battery string layer being formed by electrically connecting multiple stacked batteries as described in the first aspect.

[0010] In one embodiment, the photovoltaic module includes a top cell array, a first encapsulation layer, and a bottom cell array stacked along a first direction. The top cell array includes a plurality of top cells arranged and electrically connected along a second direction, and the bottom cell array includes a plurality of bottom cells arranged and electrically connected along the second direction. The first direction is perpendicular to the second direction.

[0011] In one embodiment, the bottom battery array has a first slot, a second slot, and a third slot arranged along a second direction, the first slot penetrating the first electrode along the first direction, and the second and third slots penetrating the antimony selenide light-absorbing layer at least along the first direction.

[0012] The second and third slots are adjacent to each other, and the projection of the second slot on the surface of the first substrate is adjacent to the first slot; the second slot is filled with a first conductive structure, which is in contact with the first electrode and the transparent conductive layer respectively.

[0013] In one embodiment, the top battery array includes a second electrode, a first carrier transport layer, a perovskite light absorption layer, a second carrier transport layer, and a third electrode stacked along a first direction;

[0014] The top cell array has a fourth, a fifth, and a sixth slot arranged along a second direction. The fourth slot penetrates the second electrode along a first direction, and the fifth and sixth slots penetrate at least along the first direction through the first carrier transport layer, the perovskite light absorption layer, and the second carrier transport layer.

[0015] The fifth and sixth slots are adjacent to each other, and the projection of the fifth slot on the surface of the second electrode is adjacent to the fourth slot; the fifth slot is filled with a second conductive structure, which is in contact with the second electrode and the third electrode respectively.

[0016] In one embodiment, along the second direction, the top battery has a first width D1, 4mm≤D1≤10mm.

[0017] In one embodiment, along the second direction, the bottom cell has a second width D2, 4mm≤D2≤10mm.

[0018] In one embodiment, the top battery array includes a plurality of top batteries connected in series along the second direction and / or a plurality of top batteries connected in parallel along the second direction; and / or,

[0019] The bottom battery array includes multiple bottom batteries connected in series along the second direction and / or multiple bottom batteries connected in parallel along the second direction.

[0020] The aforementioned tandem solar cell and photovoltaic module include a four-terminal tandem solar cell with a perovskite cell as the top cell and an antimony selenide cell as the bottom cell. Antimony selenide cells offer advantages such as a suitable bandgap, high theoretical light absorption efficiency, abundant and non-toxic raw material reserves, and simple phase composition. This allows for reduced production costs while maintaining the efficiency of the tandem solar cell, resulting in a high-efficiency, low-cost tandem solar cell, which is beneficial for mass production. The bottom cell also includes a transparent conductive layer, a first electrode, and a first substrate stacked along a first direction with the antimony selenide light absorption layer. The transparent conductive layer does not need to be formed on an additional glass substrate; it can achieve carrier transport through a film layer, making it more suitable for fabricating four-terminal tandem solar cells and enabling the subsequently fabricated photovoltaic module to be a double-glass module, further reducing the cost of the tandem solar cell. Attached Figure Description

[0021] Figure 1 This is a schematic diagram of the structure of the stacked battery provided in the embodiment of this application.

[0022] Figure 2 This is a schematic diagram of the structure of the bottom battery array provided in an embodiment of this application.

[0023] Figure 3 This is a top view schematic diagram of the bottom battery array provided in an embodiment of this application.

[0024] Figure 4 This is a schematic diagram of the top battery array provided in an embodiment of this application.

[0025] Figure 5 This is a schematic diagram of the structure of a photovoltaic module provided in an embodiment of this application.

[0026] Figure Labels

[0027] 10-Top cell; 11-Bottom cell; 111-Transparent conductive layer; 112-Antimony selenide light-absorbing layer; 113-First electrode; 114-First substrate; 115-First functional layer; 116-Second functional layer; A-First direction; 20-Top cell array; 21-Bottom cell array; 23-First encapsulation layer; B-Second direction; P1-First slot; P2-Second slot; P3-Third slot; 211-First grid line; 212-First busbar; 101-Second electrode; 102-First carrier transport layer; 103-Perovskite light-absorbing layer; 104-Second carrier transport layer; 105-Third electrode; 106-Second substrate; P4-Fourth slot; P5-Fifth slot; P6-Sixth slot; 107-Buffer layer; 201-Second busbar. Detailed Implementation

[0028] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0029] In the description of this application, it should be understood that if terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0030] Furthermore, where the terms "first" and "second" appear, these terms are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, where the term "multiple" appears, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0031] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0032] In this application, unless otherwise expressly specified and limited, the use of descriptions such as "above" or "below" the second feature indicates that the first and second features are in direct contact or indirect contact via an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. Similarly, "below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0033] It should be noted that if an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. If so, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application are for illustrative purposes only and do not represent the only possible implementation.

[0034] Currently, tandem solar cells primarily use wide-bandgap perovskite cells as the top layer, with narrow-bandgap crystalline silicon cells as the bottom layer. Although perovskite tandem solar cell structures based on crystalline silicon have high conversion efficiency, the complex manufacturing process of crystalline silicon makes their cost far higher than that of newer thin-film solar cells. Cells using other light-absorbing layer materials with bandgap close to crystalline silicon are also widely used as bottom layers in tandem solar cells, such as copper indium gallium selenide (CIGS) thin-film cells and cadmium telluride (CdTe) thin-film cells. Antimony selenide semiconductor materials have a bandgap of 1.05 eV to 1.2 eV and are widely used in single-junction solar cells; this material is also a suitable light-absorbing layer material for the bottom layer of tandem solar cells.

[0035] Current research on perovskite-antimony selenide tandem solar cells focuses only on the optical distribution and cell efficiency of the tandem cells, and is not suitable for mass production as photovoltaic modules.

[0036] Figure 1 This is a schematic diagram of the structure of the stacked battery provided in the embodiment of this application.

[0037] like Figure 1 As shown, this application embodiment provides a tandem solar cell. The solar cell includes a top cell 10 and a bottom cell 11 mechanically stacked along a first direction A. The top cell 10 is a perovskite cell, and the bottom cell 11 is an antimony selenide cell. The bottom cell 11 includes a transparent conductive layer 111, an antimony selenide light-absorbing layer 112, a first electrode 113, and a first substrate 114 stacked along the first direction A. The transparent conductive layer 111 is closer to the top cell 10 than the first electrode 113.

[0038] As can be seen from the above-described structure of the stacked battery, the stacked battery provided in this application embodiment is a four-terminal stacked battery with a perovskite battery as the top cell 10 and an antimony selenide battery as the bottom cell 11. Compared with a two-terminal stacked battery, the four-terminal stacked battery does not require an additional intermediate connection layer, nor does it require ensuring the current matching problem between the top cell 10 and the bottom cell 11. The structure is simpler, which is conducive to reducing costs and is more suitable for mass production. Among them, the bottom cell 11 includes an antimony selenide light absorption layer 112. The band gap of the antimony selenide semiconductor material is very close to that of silicon material, and the theoretical light absorption efficiency can reach more than 30%, making it suitable as a material for the light absorption layer of the bottom cell 11 of the tandem battery. Compared with crystalline silicon batteries with complex production processes, cadmium telluride batteries with highly toxic and scarce raw materials, and copper indium gallium selenide thin film batteries with expensive raw materials, antimony selenide batteries also have the advantages of abundant raw material reserves, being green and non-toxic, and having a simple phase. Thus, while ensuring the efficiency of the tandem battery, the production cost of the tandem battery can be reduced, so that the prepared tandem battery has the characteristics of high efficiency and low cost, which is conducive to the mass production of tandem batteries. Meanwhile, the bottom cell 11 also includes a transparent conductive layer 111 stacked with the antimony selenide light absorption layer 112 along the first direction A, a first electrode 113, and a first substrate 114. The first electrode 113 is formed on the surface of the first substrate 114 and is located on one side of the antimony selenide light absorption layer 112. The transparent conductive layer 111 is located on the side of the antimony selenide cell away from the first electrode 113 and can serve as another electrode of the antimony selenide cell, playing the role of transporting charge carriers together with the first electrode 113. Moreover, the transparent conductive layer 111 does not need to be formed on an additional glass substrate and can achieve the function of transporting charge carriers through the form of a film layer, which is more suitable for the fabrication of four-terminal tandem cells and makes the photovoltaic module subsequently fabricated a double-glass module, further reducing the cost of tandem cells.

[0039] In some examples, such as Figure 1 As shown, the bottom battery 11 also includes a first functional layer 115 and a second functional layer 116 stacked together. The first functional layer 115 is located between the antimony selenide light-absorbing layer 112 and the transparent conductive layer 111, and the second functional layer 116 is located between the first functional layer 115 and the transparent conductive layer 111.

[0040] Furthermore, the first functional layer 115 can be a buffer layer, which can adjust the energy band matching in the bottom cell 11, enhance the transport of charge carriers, and protect the antimony selenide light absorption layer 112, which is conducive to further improving the efficiency of the tandem cell; the second functional layer 116 can be a window layer, which can also adjust the energy level matching in the bottom cell 11, making the energy band arrangement in the bottom cell 11 more gradual, which is more conducive to the transport of charge carriers.

[0041] For example, the material of the first functional layer 115 may include one or more of cadmium sulfide (CdS), zinc oxide (ZnO), tin oxide (SnO2), etc., and the material of the second functional layer 116 may include one or more of cadmium sulfide (CdS), zinc oxide (ZnO), tin oxide (SnO2), etc. This is only an example and is not specifically limited.

[0042] In some examples, along the first direction A, the size of the antimony selenide light-absorbing layer 112 is between 600 nm and 1200 nm, the size of the second functional layer 116 is between 50 nm and 150 nm, the size of the first functional layer 115 is between 10 nm and 50 nm, and the size of the transparent conductive layer 111 is between 50 nm and 200 nm.

[0043] Based on this, the thickness of the antimony selenide light-absorbing layer 112 in the first direction A ranges from 600 nm to 1200 nm. If the antimony selenide light-absorbing layer 112 is too thin, it cannot fully absorb sunlight, resulting in a smaller number of photogenerated carriers and affecting the efficiency of the tandem solar cell. If the antimony selenide light-absorbing layer 112 is too thick, the transmission distance of photogenerated carriers increases, and carrier recombination also increases, similarly affecting the efficiency of the tandem solar cell. The thickness of the first functional layer 115 in the first direction A ranges from 10 nm to 50 nm, and the thickness of the second functional layer 116 in the first direction A ranges from 50 nm to 150 nm. If the thickness of the first functional layer 115 and the second functional layer 116 is too thin, their effect on bandgap adjustment of the bottom cell 11 is limited, and their protective effect on the antimony selenide light-absorbing layer 112 is also limited. If the thickness of the first functional layer 115 and the second functional layer 116 is too thick, the transmission distance of photogenerated carriers increases, affecting the efficiency of the tandem solar cell. The thickness of the transparent conductive layer 111 in the first direction A ranges from 50 nm to 200 nm. If the thickness of the transparent conductive layer 111 is too thin, the collection effect of the photogenerated current is poor, which affects the efficiency of the tandem solar cell. If the thickness of the transparent conductive layer 111 is too thick, the optical transmittance is low, which also affects the efficiency of the tandem solar cell.

[0044] For example, along the first direction A, the size of the antimony selenide light-absorbing layer 112 can be 600nm, 650nm, 700nm, 750nm, 800nm, 850nm, 900nm, 1050nm, or 1200nm, etc.; the size of the first functional layer 115 can be 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, or 50nm, etc.; the size of the second functional layer 116 can be 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm, or 150nm, etc.; and the size of the transparent conductive layer 111 can be 50nm, 70nm, 100nm, 120nm, 150nm, 180nm, or 200nm, etc. These are just examples and are not specifically limited.

[0045] For example, the material of the transparent conductive layer 111 may be one or more of ITO, IZO, IWO, FTO, ICO, AZO and BZO, etc., which are only examples and are not specifically limited.

[0046] Figure 2 This is a schematic diagram of the structure of the bottom battery array provided in an embodiment of this application. Figure 3 This is a top view schematic diagram of the bottom battery array provided in an embodiment of this application. Figure 4 This is a schematic diagram of the top battery array provided in an embodiment of this application. Figure 5 This is a schematic diagram of the structure of a photovoltaic module provided in an embodiment of this application.

[0047] like Figures 2-5 As shown in the embodiments of this application, a photovoltaic module is also provided. The photovoltaic module includes a battery string layer, which is formed by electrically connecting multiple stacked batteries as described in the above embodiments.

[0048] Compared with the prior art, the beneficial effects of photovoltaic modules are the same as those of the tandem cells described in any of the above embodiments, and will not be repeated here.

[0049] As one possible implementation, such as Figures 2-5As shown, the photovoltaic module includes a top cell array 20, a first encapsulation layer 23, and a bottom cell array 21 stacked along a first direction A. The top cell array 20 includes multiple top cells 10 arranged and electrically connected along a second direction B, and the bottom cell array 21 includes multiple bottom cells 11 arranged and electrically connected along the second direction B. The first direction A is perpendicular to the second direction B. Based on this, in the process of forming the top cells 10, multiple electrically connected top cells 10 can be obtained by dividing the film layer of the entire top cell 10, forming the top cell array 20. In the process of forming the bottom cells 11, multiple electrically connected bottom cells 11 can be obtained by dividing the film layer of the entire bottom cell 11, forming the bottom cell array 21. Then, the obtained top cell array 20 and bottom cell array 21 are stacked one on top of the other and mechanically laminated to form a complete photovoltaic module. Among them, the bottom cells 11 are antimony selenide cells, which have advantages such as good light absorption efficiency, suitable bandgap, low raw material price, and being green and non-toxic. This makes the prepared photovoltaic module have the characteristics of high efficiency and low cost, which is conducive to mass production.

[0050] In some examples, such as Figure 2 As shown, the bottom battery array 21 also includes a first substrate 114, a first electrode 113, an antimony selenide light-absorbing layer 112, and a transparent conductive layer 111, which are sequentially stacked along the first direction A. The bottom battery 11 also has a first slot P1, a second slot P2, and a third slot P3 arranged along the second direction B. The first slot P1 penetrates the first electrode 113 along the first direction A, and the second slot P2 and the third slot P3 penetrate the antimony selenide light-absorbing layer 112 at least along the first direction A. The second slot P2 and the third slot P3 are adjacent to each other, and the projection of the second slot P2 on the surface of the first substrate 114 is adjacent to the first slot P1. The second slot P2 is filled with a first conductive structure, which is in contact with the first electrode 113 and the transparent conductive layer 111, respectively.

[0051] Based on this, the first slot P1 can divide the entire first electrode 113 along the first direction A, and the second slot P2 and the third slot P3 can at least divide the entire antimony selenide light absorption layer 112 along the first direction A. The first slot P1, the second slot P2 and the third slot P3 can divide the entire bottom cell 11 film layer into multiple bottom cells 11 arranged along the second direction B. The second slot P2 is filled with a first conductive structure, which connects the first electrode 113 and the transparent conductive layer 111, so that the multiple bottom cells 11 obtained by division can be electrically connected, thereby forming a bottom cell array 21. Meanwhile, the second slot P2 and the third slot P3 are adjacent, and the projections of the second slot P2 and the first slot P1 on the surface of the first substrate 114 are also adjacent. That is, the first slot P1, the second slot P2 and the third slot P3 are closely attached in the second direction B, which makes the area occupied by the ineffective area in the bottom cell array 21 smaller, and can increase the area occupied by the effective area in the bottom cell array 21, thereby increasing the power generation area and improving the efficiency of the photovoltaic module.

[0052] In some examples, such as Figure 2 As shown, the bottom battery array 21 also includes a first functional layer 115 located between the antimony selenide light-absorbing layer 112 and the transparent conductive layer 111, and a second functional layer 116 located between the first functional layer 115 and the transparent conductive layer 111. Further, the second slot P2 penetrates the antimony selenide light-absorbing layer 112, the buffer layer, and the window layer along the first direction A, forming an interconnection channel between the electrodes on both sides of the bottom battery 11; the transparent conductive layer 111 and the first conductive structure are prepared after the formation of the second slot P2 and before the formation of the third slot P3. The material of the first conductive structure can be the same as the material of the transparent conductive layer 111, and it is formed in the same process as the transparent conductive layer 111; the third slot P3 penetrates the antimony selenide light-absorbing layer 112, the buffer layer, the window layer, and the transparent conductive layer 111 along the first direction A, forming a bottom battery array 21 including multiple electrically connected bottom batteries 11; further, as... Figure 3 As shown, the bottom cell array 21 also includes metal grid lines located on the side of the transparent conductive layer 111 opposite to the antimony selenide light-absorbing layer 112, which can improve the photovoltaic module's ability to collect photogenerated carriers. Furthermore, the third slot P3 is not additionally filled, which can further reduce the cost of the photovoltaic module while ensuring insulation.

[0053] In some examples, such as Figures 2-3 and Figure 5 As shown, the bottom battery array 21 also includes a first busbar 212, which is located on the first electrodes 113 on opposite sides of the bottom battery array 21 along the second direction B.

[0054] In some examples, such as Figure 1 and Figure 4As shown, the top cell 10 includes a second electrode 101, a first carrier transport layer 102, a perovskite light absorption layer 103, a second carrier transport layer 104, and a third electrode 105 stacked along a first direction A. Similarly, the top cell array 20 also includes a second electrode 101, a first carrier transport layer 102, a perovskite light absorption layer 103, a second carrier transport layer 104, and a third electrode 105 stacked along a first direction A.

[0055] For example, the material of the perovskite light-absorbing layer 103 generally includes a three-dimensional structure ABX3, wherein A is a monovalent cation, including but not limited to one or more monovalent cation mixtures of cesium (Cs), rubidium (Rb), methylamino (CH3NH3), and formamidinyl (CH2(NH2)2); B is a divalent cation, including but not limited to one or more divalent cation mixtures of lead (Pb), copper (Cu), zinc (Zn), gallium (Ga), tin (Sn), and calcium (Ca); and X is a monovalent anion, including but not limited to one or more monovalent anion mixtures of iodine (I), bromine (Br), chloride (Cl), fluorine (F), and thiocyanate (SCN). This is only an example and is not specifically limited.

[0056] For example, the thickness of the perovskite light-absorbing layer 103 in the first direction A can be 300 μm to 600 μm, and the band gap can be 1.5 eV to 3.0 eV. The preparation methods of the perovskite light-absorbing layer 103 include, but are not limited to, one or more of spin coating, blade coating, vapor deposition, printing, spraying, spray pyrolysis, slot coating, etc. These are just examples and are not specifically limited.

[0057] For example, the thickness of the perovskite light-absorbing layer 103 in the first direction A can be 300 μm, 350 μm, 400 μm, 450 μm, 500 μm, 550 μm or 600 μm, etc., and the band gap of the perovskite light-absorbing layer 103 can be 1.5 eV, 1.7 eV, 1.9 eV, 2 eV, 2.2 eV, 2.4 eV, 2.6 eV, 2.8 eV or 3.0 eV, etc., which are only examples and are not specifically limited.

[0058] For example, the top battery 10 and the top battery array 20 may include a plurality of first carrier transport layers 102 and / or a plurality of second carrier transport layers 104.

[0059] Furthermore, the first carrier transport layer 102 can be a hole transport layer, and the second carrier transport layer 104 can be an electron transport layer; or, the first carrier transport layer 102 can be an electron transport layer, and the second carrier transport layer 104 can be a hole transport layer.

[0060] For example, the material of the electron transport layer may include, but is not limited to, n-type monocrystalline silicon, n-type polycrystalline silicon, n-type amorphous silicon, TiO2, SnO2, ZnO, ZrO2, GZO, IZO, FTO, ITO, BaSnO3, and TiSnO. x SnZnO x Fullerenes and their derivatives (C 60 The hole transport layer material can be one or more of p-type monocrystalline silicon, p-type polycrystalline silicon, p-type amorphous silicon, single-molecule self-assembled materials, etc., including but not limited to p-type monocrystalline silicon, p-type polycrystalline silicon, p-type amorphous silicon, single-molecule self-assembled materials, etc., wherein the single-molecule self-assembled materials can include [2-(9H-carbazole-9-yl)ethyl]phosphonic acid (2PACz), [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid (MeO-2PACz), [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid (M... e-4PACz), benzoic acid, 4-[bis(2,4-dimethoxybiphenyl-4-yl)amino]-biphenyl-4-carboxylic acid [MC-43], etc., Sprio-OMeTAD (2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene), PTAA (polyethylene terephthalate), P3HT (polymer of 3-hexylthiophene), PEDOT:PSS, Spiro-TTB, F4-TCNQ, F6TCNNQ, TAPC, NiO x One or more of CuSCN, CuAlO2, V2O5, CdS, CdSe, etc. are used here as examples only and are not specifically limited.

[0061] For example, the thickness of the electron transport layer in the first direction A can be between 0 and 100 μm, and the thickness of the hole transport layer in the first direction A can also be between 0 and 100 μm. For instance, the thickness of the electron transport layer in the first direction A can be 1 μm, 20 μm, 40 μm, 60 μm, 80 μm, or 100 μm, etc., and the thickness of the hole transport layer in the first direction A can be 0 μm, 1 μm, 20 μm, 40 μm, 60 μm, 80 μm, or 100 μm, etc. These are merely examples and are not specifically limited.

[0062] For example, the material of the second electrode 101 may be one or more of ITO, IZO, IWO, FTO, ICO, AZO and BZO, etc., and the material of the third electrode 105 may also be one or more of ITO, IZO, IWO, FTO, ICO, AZO and BZO, etc., etc., for example only and not specifically limited.

[0063] For example, such as Figure 4As shown, the top cell 10 also includes a second substrate 106, which is located on the side of the second electrode 101 opposite to the perovskite light-absorbing layer 103. Similarly, the bottom cell array 21 also includes a second substrate 106 located on the side of the second electrode 101 opposite to the perovskite light-absorbing layer 103. Further, the second substrate 106 can be a glass substrate.

[0064] In some examples, such as Figure 4 As shown, the top battery array 20 has a fourth slot P4, a fifth slot P5, and a sixth slot P6 arranged along the second direction B. The fourth slot P4 penetrates the second electrode 101 along the first direction A. The fifth slot P5 and the sixth slot P6 penetrate at least along the first direction A through the first carrier transport layer 102, the perovskite light absorption layer 103, and the second carrier transport layer 104. The fifth slot P5 and the sixth slot P6 are adjacent to each other, and the projection of the fifth slot P5 on the surface of the second electrode 101 is adjacent to the fourth slot P4. The fifth slot P5 is filled with a second conductive structure, which contacts the second electrode 101 and the third electrode 105, respectively.

[0065] Based on this, the fourth slot P4 can divide the entire second electrode 101 along the first direction A, and the fifth slot P5 and the sixth slot P6 can at least divide the entire perovskite light absorption layer 103 along the first direction A. The fourth slot P4, the fifth slot P5 and the sixth slot P6 can divide the entire top cell 10 film layer into multiple top cells 10 arranged along the second direction B. The fifth slot P5 is filled with a second conductive structure, which connects the second electrode 101 and the third electrode 105, so that the multiple top cells 10 obtained by division can be electrically connected, thereby forming a top cell array 20. Meanwhile, the fifth slot P5 and the sixth slot P6 are adjacent, and the projections of the fifth slot P5 and the fourth slot P4 on the surface of the second electrode 101 are also adjacent. That is, the fourth slot P4, the fifth slot P5 and the sixth slot P6 are closely attached in the second direction B, which makes the area occupied by the ineffective region in the top cell array 20 smaller, and can increase the area occupied by the effective region in the top cell array 20, thereby increasing the power generation area and improving the efficiency of the photovoltaic module.

[0066] In some examples, such as Figure 4As shown, the top battery array 20 also includes a passivation layer (not shown) located between the perovskite light absorption layer 103 and the second carrier transport layer 104, and a buffer layer 107 located between the second carrier transport layer 104 and the third electrode 105. Furthermore, the fifth slot P5 penetrates along the first direction A through the first carrier transport layer 102, the perovskite light absorption layer 103, the passivation layer, the second carrier transport layer 104, and the buffer layer 107, forming an interconnection channel between the electrodes on both sides of the top cell 10. The third electrode 105 and the second conductive structure are prepared after the formation of the fifth slot P5 and before the formation of the sixth slot P6. The material of the second conductive structure can be the same as that of the third electrode 105, and they are formed in the same process. The sixth slot P6 penetrates along the first direction A through the first carrier transport layer 102, the perovskite light absorption layer 103, the passivation layer, the second carrier transport layer 104, the buffer layer 107, and the third electrode 105, forming a top cell array 20 including multiple electrically connected top cells 10. In addition, no additional filling is performed in the sixth slot P6, which can further reduce the cost of photovoltaic modules while ensuring insulation.

[0067] In some examples, such as Figure 4 and Figure 5 As shown, the top battery array 20 also includes a second busbar 201, which is located on the second electrodes 101 on opposite sides of the top battery array 20 along the second direction B.

[0068] As one possible implementation, such as Figure 5 As shown, along the second direction B, the top battery 10 has a first width D1, 4mm≤D1≤10mm.

[0069] Based on this, in the top-mounted solar array 20, the first width D1 of each top-mounted solar cell 10 in the second direction B can be between 4mm and 10mm. This ensures a large power generation area while minimizing resistive losses in the top-mounted solar cell 10 and the top-mounted solar array 20, thereby improving the efficiency of the photovoltaic module. If the first width D1 of the top-mounted solar cell 10 in the second direction B is too small, the power generation area of ​​the top-mounted solar cell 10 will also be small, the area of ​​the ineffective region will be large, the photocurrent will be low, and the power loss in the top-mounted solar array 20 will be high, resulting in low efficiency of the photovoltaic module. Conversely, if the first width D1 of the top-mounted solar cell 10 in the second direction B is too large, the resistive losses inside the top-mounted solar cell 10 and the top-mounted solar array 20 will also be high, resulting in high power loss in the top-mounted solar array 20 and low efficiency of the photovoltaic module.

[0070] For example, along the second direction B, the first width D1 of the top battery 10 can be 4mm, 5mm, 6mm, 7mm, 8mm, 9mm or 10mm, etc., which are only examples and are not specifically limited.

[0071] As one possible implementation, such as Figure 5 As shown, along the second direction B, the bottom cell 11 has a second width D2, 4mm≤D2≤10mm.

[0072] Based on this, in the bottom cell array 21, the first width D1 of each bottom cell 11 in the second direction B can be between 4mm and 10mm. This ensures a large power generation area while minimizing resistive losses in the bottom cell 11 and the bottom cell array 21, thereby improving the efficiency of the photovoltaic module. If the first width D1 of the bottom cell 11 in the second direction B is too small, the power generation area of ​​the bottom cell 11 will also be small, the area of ​​the ineffective region will be large, the photocurrent will be low, and the power loss in the bottom cell array 21 will be high, resulting in low efficiency of the photovoltaic module. Conversely, if the first width D1 of the bottom cell 11 in the second direction B is too large, the resistive losses inside the bottom cell 11 and the bottom cell array 21 will also be high, resulting in high power loss in the bottom cell array 21 and low efficiency of the photovoltaic module.

[0073] For example, along the second direction B, the first width D1 of the bottom battery 11 can be 4mm, 5mm, 6mm, 7mm, 8mm, 9mm or 10mm, etc., which are only examples and are not specifically limited.

[0074] In some examples, by adjusting the width of the top cell 10 and the width of the bottom cell 11, voltage matching between the top cell 10 and the bottom cell 11 can be achieved, further improving the efficiency of the photovoltaic module.

[0075] In some examples, the invalid region in the bottom cell array 21 refers to the region in the bottom cell 11 with the first slot P1, the second slot P2, and the third slot P3, while the effective region is the remaining region in the film layer stack except for the invalid region. The invalid region in the top cell array 20 refers to the region in the top cell 10 with the fourth slot P4, the fifth slot P5, and the sixth slot P6, while the effective region is the remaining region in the film layer stack except for the invalid region. By adjusting the positions of the effective and invalid regions in the top cell array 20 and the bottom cell array 21, the invalid region in the top cell array 20 can be made to be opposite to the invalid region in the bottom cell array 21, thereby achieving better light absorption.

[0076] As one possible implementation, the top battery array 20 includes a plurality of top batteries 10 connected in series along the second direction B and / or a plurality of top batteries 10 connected in parallel along the second direction B; and / or, the bottom battery array 21 includes a plurality of bottom batteries 11 connected in series along the second direction B and / or a plurality of bottom batteries 11 connected in parallel along the second direction B.

[0077] Based on this, the multiple top cells 10 in the top cell array 20 can be connected in series or in parallel, or some of the top cells 10 can be connected in series and some in parallel. This allows for voltage matching between the top cells 10 and the bottom cells 11 by adjusting the series and parallel connection configuration, thereby further improving cell efficiency. Similarly, the multiple bottom cells 11 in the bottom cell array 21 can be connected in series or in parallel, or some of the bottom cells 11 can be connected in series and some in parallel. This allows for voltage matching between the top cells 10 and the bottom cells 11 by adjusting the series and parallel connection configuration, thereby further improving the efficiency of the photovoltaic module.

[0078] Furthermore, given a fixed width of the top cell 10, voltage matching between the top cell 10 and the bottom cell 11 can be further achieved by adjusting the series-parallel connection of multiple top cells 10 in the top cell array 20; similarly, given a fixed width of the bottom cell 11, voltage matching between the top cell 10 and the bottom cell 11 can be further achieved by adjusting the series-parallel connection of multiple bottom cells 11 in the bottom cell array 21, thereby further improving the efficiency of the photovoltaic module.

[0079] For example, the series-parallel connection of multiple top batteries 10 in the top battery array 20 and the series-parallel connection of multiple bottom batteries 11 in the bottom battery array 21 can be adjusted by adjusting the position of the slots. Taking the bottom battery array 21 as an example, in the second direction B, some slots can be the first slot P1, the second slot P2, and the third slot P3 in sequence, and other slots can be the second slot P2, the third slot P3, and the first slot P1 in sequence, which is equivalent to negative-negative-positive connection, and connected through an external busbar to realize the parallel connection of some bottom batteries 11. Similarly, taking the top battery array 20 as an example, in the second direction B, some slots can be the fourth slot P4, the fifth slot P5, and the sixth slot P6 in sequence, and other slots can be the fifth slot P5, the sixth slot P6, and the fourth slot P4 in sequence, which is equivalent to negative-negative-positive connection, and connected through an external busbar to realize the parallel connection of some top batteries 10.

[0080] The following describes the method for preparing photovoltaic modules provided in this application with reference to specific embodiments. The embodiments are for explanation only and are not intended to limit the scope of this application.

[0081] I. Fabrication of perovskite top solar cell array:

[0082] (1) Laser etching is performed on the TCO substrate located on the glass substrate to form a fourth groove to separate the front electrode;

[0083] (2) NiO was prepared on a laser-scribed TCO substrate by magnetron sputtering. x It serves as a hole transport layer with a thickness of 15 nm.

[0084] (3) SAMs, serving as hole transport layers, and Cs, serving as perovskite light absorption layers, were sequentially prepared using the slit coating method. 0.25 FA 0.75 Pb(I 0.8 Br 0.2 )3, with a band gap of approximately 1.68 eV and a thickness of 550 nm;

[0085] (4) PDADI as a passivation layer and C60 layer as an electron transport layer were prepared by thermal evaporation process, with a total thickness of 30 nm;

[0086] (5) A buffer layer of SnO2 with a thickness of 20 nm was prepared by atomic layer deposition.

[0087] (6) Perform laser scribing to form a fifth groove that serves as an interconnection channel between the front and rear electrodes;

[0088] (7) ITO electrodes were fabricated using magnetron sputtering with a thickness of 270 nm;

[0089] (8) Perform laser scribing to form the sixth groove to separate the back electrode;

[0090] (9) Perform laser edge cleaning process to draw busbars on the front electrode and back electrode.

[0091] II. Fabrication of antimony selenide-based solar cell arrays:

[0092] (1) Clean the glass substrate;

[0093] (2) A molybdenum electrode with a thickness of 1 μm was prepared on a glass substrate by magnetron sputtering.

[0094] (3) Laser scribing is used to form the first groove and divide the molybdenum electrode as the front electrode of a single top cell;

[0095] (4) A light-absorbing layer of antimony selenide with a thickness of 800 nm was prepared by rapid thermal evaporation.

[0096] (5) A CdS buffer layer with a thickness of 30 nm was deposited using a chemical bath method;

[0097] (6) A zinc oxide window layer with a thickness of 100 nm was prepared by magnetron sputtering.

[0098] (7) Laser scribing is used to remove the film layers other than the molybdenum electrode at the second groove position to form an interconnection channel between the front and rear electrodes;

[0099] (8) An ITO back electrode with a thickness of 150 nm was prepared by magnetron sputtering.

[0100] (9) A third groove is formed by laser scribing to divide the back electrode and form a bottom battery series structure;

[0101] (10) Metal grid lines are fabricated on the segmented back electrode by thermal evaporation to improve the device’s photogenerated carrier collection capability;

[0102] (11) Laser edge cleaning process to draw out the busbar.

[0103] III. Preparation of perovskite-antimony selenide four-terminal tandem photovoltaic modules:

[0104] (1) Stack the prepared perovskite top cell array and antimony selenide bottom cell array from bottom to top in the order of antimony selenide bottom cell array, encapsulation film, and perovskite top cell array, and attach encapsulation butyl glue to the edge of the cell to obtain the assembled module.

[0105] (2) The assembled components are placed in a laminator and degassed to obtain a packaged perovskite-antimony selenide four-terminal tandem photovoltaic module.

[0106] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0107] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A stacked battery, characterized in that, The stacked battery includes a top battery and a bottom battery mechanically stacked along a first direction, wherein the top battery is a perovskite battery and the bottom battery is an antimony selenide battery. The bottom cell includes a transparent conductive layer, an antimony selenide light-absorbing layer, a first electrode, and a first substrate stacked along the first direction, wherein the transparent conductive layer is closer to the top cell than the first electrode.

2. The stacked battery according to claim 1, characterized in that, The bottom battery further includes a first functional layer and a second functional layer stacked together, wherein the first functional layer is located between the antimony selenide light-absorbing layer and the transparent conductive layer, and the second functional layer is located between the first functional layer and the transparent conductive layer.

3. The stacked battery according to claim 2, characterized in that, Along the first direction, the size of the antimony selenide light-absorbing layer is between 600nm and 1200nm, the size of the second functional layer is between 50nm and 150nm, the size of the first functional layer is between 10nm and 50nm, and the size of the transparent conductive layer is between 50nm and 200nm.

4. A photovoltaic module, characterized in that, The photovoltaic module includes a battery string layer, which is formed by electrically connecting multiple stacked batteries as described in any one of claims 1 to 3.

5. The photovoltaic module according to claim 4, characterized in that, The photovoltaic module includes a top cell array, a first encapsulation layer, and a bottom cell array stacked along the first direction. The top cell array includes a plurality of top cells arranged and electrically connected along the second direction, and the bottom cell array includes a plurality of bottom cells arranged and electrically connected along the second direction. The first direction is perpendicular to the second direction.

6. The photovoltaic module according to claim 5, characterized in that, The bottom battery array has a first slot, a second slot, and a third slot arranged along the second direction. The first slot penetrates the first electrode along the first direction, and the second slot and the third slot penetrate the antimony selenide light absorption layer at least along the first direction. The second slot and the third slot are adjacent to each other, and the projection of the second slot on the surface of the first substrate is adjacent to the first slot; The second slot is filled with a first conductive structure, which is in contact with the first electrode and the transparent conductive layer.

7. The photovoltaic module according to claim 5, characterized in that, The top battery array includes a second electrode, a first carrier transport layer, a perovskite light absorption layer, a second carrier transport layer, and a third electrode stacked along the first direction; The top battery array has a fourth, a fifth, and a sixth slot arranged along the second direction. The fourth slot penetrates the second electrode along the first direction. The fifth and sixth slots penetrate at least the first carrier transport layer, the perovskite light absorption layer, and the second carrier transport layer along the first direction. The fifth slot and the sixth slot are adjacent to each other, and the projection of the fifth slot on the surface of the second electrode is adjacent to the fourth slot; the fifth slot is filled with a second conductive structure, which is in contact with the second electrode and the third electrode respectively.

8. The photovoltaic module according to any one of claims 5 to 7, characterized in that, Along the second direction, the top battery has a first width D1, 4mm≤D1≤10mm.

9. The photovoltaic module according to any one of claims 5 to 7, characterized in that, Along the second direction, the bottom battery has a second width D2, 4mm≤D2≤10mm.

10. The photovoltaic module according to any one of claims 5 to 7, characterized in that, The top battery array includes multiple top batteries connected in series along the second direction and / or multiple top batteries connected in parallel along the second direction; and / or, The bottom battery array includes multiple bottom batteries connected in series along the second direction and / or multiple bottom batteries connected in parallel along the second direction.

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