Novel terahertz detection module
By using a novel terahertz detection module, which incorporates components such as a terahertz input waveguide and a quartz substrate, the problems of narrow detection range and insufficient sensitivity are solved, achieving efficient terahertz wave detection in the 100GHz-500GHz frequency band with a wide range and high sensitivity.
Patent Information
- Application Number
- CN202422858656.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-22
- Publication Date
- 2025-12-02
- Estimated Expiration
- 2034-11-22
AI Technical Summary
Existing terahertz wave detection technologies have narrow detection ranges and insufficient sensitivity, especially in the 100GHz-1000GHz frequency band where efficient detection is difficult to achieve.
A novel terahertz detection module is adopted, including a terahertz input waveguide, a quartz substrate, a terahertz waveguide conversion probe, a terahertz detection Schottky diode, and an intermediate frequency filter. The terahertz waveguide conversion probe on the quartz substrate is connected to the matching network of the terahertz detection Schottky diode. Combined with a DC bias module and beam-type lead grounding, efficient detection of terahertz waves is achieved.
It achieves wide-range detection in the 100GHz-500GHz frequency band, with a responsivity of up to 3000V/W and a detection time response on the picosecond level, exhibiting high sensitivity and fast response characteristics.
Smart Images
Figure CN223624331U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of terahertz wave detection technology, and in particular to a novel terahertz detection module. Background Technology
[0002] Terahertz waves refer to electromagnetic waves with frequencies ranging from 100 GHz to 10 THz. Terahertz waves occupy a unique position in the electromagnetic spectrum, and terahertz wave technology is recognized internationally as a crucial interdisciplinary frontier. Due to their high operating frequencies, the generation and detection of terahertz waves are extremely important. Currently, detection in the low-frequency terahertz band (100 GHz-1000 GHz) mainly relies on coherent detection based on mixing and direct intensity detection. In many applications, direct intensity detection of terahertz wave energy is sufficient. Compared to the commonly used mixing detection mode, which typically requires a local oscillator to drive the mixer and thus the terahertz wave detection, detection-based terahertz wave detection usually does not require a large local oscillator. Therefore, its technical difficulty and cost are lower than mixing detection, leading to widespread attention on terahertz detection. Currently, the intensity detection of terahertz waves is achieved either by using terahertz transistors or by using zero-bias Schottky diodes. Utility Model Content
[0003] The technical problem to be solved by this utility model is to provide a new terahertz detector module with a wide detection range and high sensitivity.
[0004] To solve the above-mentioned technical problems, the technical solution adopted by this utility model is as follows: a novel terahertz detection module, comprising a terahertz input waveguide and a quartz substrate, wherein a terahertz waveguide conversion probe on the quartz substrate spans the terahertz input waveguide, the outer end of the terahertz waveguide conversion probe extends to the left end of the quartz substrate, the inner end of the terahertz waveguide conversion probe is connected to one end of a terahertz detection Schottky diode via a terahertz detection Schottky diode matching network, the other end of the terahertz detection Schottky diode is connected to one end of an intermediate frequency filter via an intermediate frequency filter matching network, the other end of the intermediate frequency filter is connected to the output end of a DC bias module and the input end of an intermediate frequency interface, respectively, one end of a beam-type lead is connected to the terahertz detection Schottky diode matching network via a microstrip line, and the other end of the beam-type lead extends to the outer side of the quartz substrate for connection with the cavity to achieve grounding.
[0005] Preferably, the thickness of the quartz substrate is 50 micrometers.
[0006] Preferably, the beam-type lead is a DC ground terminal, while the terahertz radio frequency terminal is open-circuited.
[0007] A further technical solution is that the turn-on voltage of the terahertz detector Schottky diode is 0.7V, and the anode area of the Schottky diode needs to be less than 1 square micrometer, the junction capacitance is less than 1fF, and the junction resistance is not greater than 15 ohms.
[0008] The beneficial effects of adopting the above technical solution are as follows: the detection module described in this application can realize the detection of terahertz waves in the range of 100GHz-500GHz, with a responsivity of 3000V / W and an intrinsic responsivity of detection time on the order of picoseconds. It has the advantages of wide detection range and high sensitivity. Attached Figure Description
[0009] The present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments.
[0010] Figure 1 This is a top view of the detector module described in this embodiment of the present invention.
[0011] The components include: 1. Terahertz input waveguide; 2. Quartz substrate; 3. Terahertz waveguide conversion probe; 4. Terahertz detector Schottky diode matching network; 5. Schottky diode; 6. Intermediate frequency filter matching network; 7. Intermediate frequency filter; 8. DC bias module; 9. Beam lead; 10. Microstrip line. Detailed Implementation
[0012] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only a part of the embodiments of the present utility model, and not all of them. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.
[0013] Many specific details are set forth in the following description in order to provide a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Those skilled in the art can make similar extensions without departing from the spirit of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.
[0014] like Figure 1As shown in the figure, this utility model discloses a novel terahertz detection module, including a terahertz input waveguide 1 and a quartz substrate 2. A terahertz waveguide conversion probe 3 on the quartz substrate 2 spans across the terahertz input waveguide 1. The outer end of the terahertz waveguide conversion probe 3 extends to the left end of the quartz substrate 2. The inner end of the terahertz waveguide conversion probe 3 is connected to one end of a terahertz detection Schottky diode 5 via a terahertz detection Schottky diode matching network 4. The other end of the terahertz detection Schottky diode 5 is connected to one end of an intermediate frequency filter 7 via an intermediate frequency filter matching network 6. The other end of the intermediate frequency filter 7 is connected to a DC bias module 8. One end of a beam lead 9 is connected to the terahertz detection Schottky diode matching network 4 via a microstrip line 10. The other end of the beam lead 9 extends to the outside of the quartz substrate 2 for connection to the cavity to achieve grounding.
[0015] The terahertz waveguide conversion probe 3, terahertz detector Schottky diode matching network 4, terahertz detector Schottky diode 5, intermediate frequency filter matching network 6, and intermediate frequency filter 7 are fabricated on a quartz substrate with a thickness of 50 micrometers. The quartz circuit is grounded via a beam-lead 9, which uses commonly used gold wire bonding for grounding. This significantly reduces the inductive effect at the terahertz RF input. This beam-lead is a DC ground and must be open-circuited to the terahertz RF input.
[0016] The terahertz input port is a standard terahertz waveguide port. Taking the WR4 standard waveguide of 170GHz-260GHz as an example, when the WR4 waveguide is used as the input, the terahertz wave enters the WR4 waveguide, is converted from the TE10 mode in the waveguide to the quasi-TEM mode on the microstrip after passing through the terahertz detection Schottky diode matching network 4, and is then input to the terahertz detection Schottky diode 5. The terahertz detection Schottky diode 5 used in this application is not the commonly used zero-barrier Schottky diode, but a Schottky diode with a certain barrier height. Preferably, it is a Schottky diode with a turn-on voltage of 0.7V, and the anode area of the Schottky diode needs to be less than 1 square micrometer, the junction capacitance is less than 1fF, and the junction resistance is not greater than 15 ohms.
[0017] A Schottky diode with a certain barrier height is used. When the external bias voltage is 0.7V, this Schottky diode responds extremely quickly to the input terahertz wave, reaching the picosecond level. Furthermore, due to the nonlinear effect of the Schottky diode, its detection responsivity near the bias voltage is as high as 3000V / W. After the terahertz wave passes through the biased Schottky diode, the diode converts the energy of the terahertz wave into a low-frequency intermediate frequency (IF) envelope signal, which is then output after passing through the IF filter 7. The DC bias of the terahertz detection Schottky diode is input through the DC port of the Bias-Tee (DC bias module 8), grounded via a beam-type lead. The IF signal of the detected envelope is output through the IF port of the Bias-Tee (DC bias module 8), which is typically an SMA interface.
[0018] Based on the novel terahertz detection module proposed in this invention, it is possible to detect terahertz waves in the range of 100GHz-500GHz. The detection time is mainly determined by the input terahertz waveguide, with a responsivity of 3000V / W and an intrinsic responsivity on the picosecond level.
Claims
1. A novel terahertz detection module, characterized in that: The device includes a terahertz input waveguide (1) and a quartz substrate (2). A terahertz waveguide conversion probe (3) on the quartz substrate (2) spans the terahertz input waveguide (1). The outer end of the terahertz waveguide conversion probe (3) extends to the left end of the quartz substrate (2). The inner end of the terahertz waveguide conversion probe (3) is connected to one end of a terahertz detector Schottky diode (5) via a terahertz detector Schottky diode matching network (4). The other end of the terahertz detector Schottky diode (5) is connected to one end of an intermediate frequency filter (7) via an intermediate frequency filter matching network (6). The other end of the intermediate frequency filter (7) is connected to a DC bias module (8). One end of a beam lead (9) is connected to the terahertz detector Schottky diode matching network (4) via a microstrip line (10). The other end of the beam lead (9) extends to the outside of the quartz substrate (2) for connection to the cavity and grounding.
2. The novel terahertz detection module as described in claim 1, characterized in that: The thickness of the quartz substrate (2) is 50 micrometers.
3. The novel terahertz detection module as described in claim 1, characterized in that: The beam-type lead (9) is a DC ground terminal, and is open to the terahertz radio frequency terminal.
4. The novel terahertz detection module as described in claim 1, characterized in that: The turn-on voltage of the terahertz detector Schottky diode (5) is 0.7V, and the anode area of the Schottky diode must be less than 1 square micrometer, the junction capacitance must be less than 1fF, and the junction resistance must be no greater than 15 ohms.
5. The novel terahertz detection module as described in claim 1, characterized in that: The terahertz input waveguide (1) is a WR4 standard waveguide of 170GHz-260GHz.