Temperature control device, electrostatic chuck and semiconductor equipment
By setting up dense and sparse heat exchange channels in the temperature control device, the problem of the inability of existing temperature control devices to accurately control the temperature is solved, and uniform control of the wafer temperature field is achieved, thereby improving the processing quality.
Patent Information
- Application Number
- CN202423054471.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-11
- Publication Date
- 2025-12-05
- Estimated Expiration
- 2034-12-11
AI Technical Summary
Existing temperature control devices cannot accurately control the temperature of different areas of the wafer, resulting in poor temperature field control.
Design a temperature control device that is divided into a first zone and a second zone, and set different heat exchange channels in each zone. By introducing heat exchange media into each zone, the temperature field of the wafer can be controlled in a zoned manner. The temperature can be precisely regulated by using the distribution of dense and sparse curved channels.
This achieves uniform control of the wafer temperature field, improves temperature control performance, and ensures wafer processing quality.
Smart Images
Figure CN223638331U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to the technical field of semiconductor, especially relates to a temperature control device, electrostatic chuck and semiconductor equipment. BACKGROUND
[0002] In the manufacturing process of semiconductor devices, plasma etching, physical vapor deposition, chemical vapor deposition and other process methods are often used for micro-machining of semiconductor process pieces or wafers. Micro-machining manufacturing processes are usually carried out in a vacuum reaction chamber. Process gas is introduced into the vacuum reaction chamber, and the process gas is activated by external energy input, and then the surface of the semiconductor process piece or wafer is processed.
[0003] During processing, the semiconductor process piece or wafer needs to be placed on a carrier device for fixation. During the processing process, various process conditions will affect the quality of the surface treatment of the semiconductor process piece or wafer. For example, the heating temperature field of the wafer directly affects the quality of wafer processing. In actual processing, the surface temperature of the carrier device needs to be controlled within a specific temperature range to ensure that the wafer fixed on the carrier device can be accurately temperature-controlled during processing.
[0004] One of the existing temperature field control methods is to set a temperature control device on the carrier device. The temperature control device integrates a heat exchange channel, and heat exchange is carried out by pushing heat exchange medium into the heat exchange channel. Then it is circulated back to the temperature control device to achieve constant temperature control. The existing heat exchange channel is usually one-piece, and in the processing process, the temperature of different areas of the wafer surface is usually different (for example, the temperature of the wafer center is usually higher than that of the outer ring area). The above temperature control method cannot accurately and precisely control the temperature of each area of the wafer, resulting in poor temperature field control effect.
[0005] Therefore, based on the above technical problems, a temperature control device, electrostatic chuck and semiconductor equipment are needed to improve the temperature control device to accurately control the temperature field. SUMMARY
[0006] The utility model discloses a temperature control device, electrostatic chuck and semiconductor equipment, which is characterized by a plurality of heat exchange channels arranged in the temperature control device to flexibly control the temperature of each area of the wafer, ensure the uniformity of the temperature field and improve the temperature control effect.
[0007] The utility model provides a temperature control device, which comprises a temperature control body.
[0008] The temperature control body has a first partition and a second partition, and the second partition surrounds the first partition.
[0009] The temperature control body is provided with a first heat exchange flow channel and a second heat exchange flow channel;
[0010] The first heat exchange flow channel comprises a first curved flow channel, which is arranged in the first subzone and reciprocally bent.
[0011] The second heat exchange flow channel comprises a second curved flow channel, which is arranged in the second subzone and reciprocally bent.
[0012] The distribution of the first curved flow channel is denser than that of the second curved flow channel.
[0013] Optionally, the first curved flow channel and the second curved flow channel are spiral flow channels, the second curved flow channel surrounds the first curved flow channel, and the rotation direction of the first curved flow channel is opposite to that of the second curved flow channel.
[0014] Optionally, the center lines of the first curved flow channel and the second curved flow channel are located in a first reference plane.
[0015] Optionally, the inner diameters of the first heat exchange flow channel and the second heat exchange flow channel are the same.
[0016] Optionally, the first heat exchange flow channel further comprises a first liquid inlet flow channel and a first liquid outlet flow channel, the first liquid inlet flow channel is in communication with the outer end of the first curved flow channel, and the first liquid outlet flow channel is in communication with the inner end of the first curved flow channel.
[0017] And / or, the second heat exchange flow channel further comprises a second liquid inlet flow channel and a second liquid outlet flow channel, the second liquid inlet flow channel is in communication with the outer end of the second curved flow channel, and the second liquid outlet flow channel is in communication with the inner end of the second curved flow channel.
[0018] Optionally, the center lines of the first liquid inlet flow channel and the first liquid outlet flow channel are located in a second reference plane, and the second reference plane is parallel to the first reference plane.
[0019] And / or, the center lines of the second liquid inlet flow channel and the second liquid outlet flow channel are located in a second reference plane, and the second reference plane is parallel to the first reference plane.
[0020] Optionally, the first liquid inlet flow channel and the first liquid outlet flow channel extend along a first direction, and the first direction is parallel to the first reference plane.
[0021] And / or, the second liquid inlet flow channel and the second liquid outlet flow channel extend along a first direction, and the first direction is parallel to the first reference plane.
[0022] Optionally, the first liquid inlet flow channel and the second liquid inlet flow channel extend in a forward direction of the first direction and pass through to the outer wall of the temperature control body, and the first liquid outlet flow channel and the second liquid outlet flow channel extend in a reverse direction of the first direction and pass through to the outer wall of the temperature control body.
[0023] The utility model also provides a kind of electrostatic chuck, including the temperature control device of above-mentioned.
[0024] The utility model also provides a kind of semiconductor equipment, and the electrostatic chuck of above-mentioned is installed in the semiconductor equipment.
[0025] In the utility model, temperature control body is divided into first subarea located in central region and second subarea around first subarea, and first curve flow channel is separately arranged in first subarea, and second curve flow channel is separately arranged in second subarea, by separately passing into heat exchange medium in each flow channel, to control the temperature of first subarea and second subarea respectively, and then the partition control to wafer temperature field can be realized.In addition, first subarea corresponds to the central position of temperature control body, and the first curve flow channel distributed in first subarea is denser, which can correspond to the higher temperature area of the center of wafer, and the second curve flow channel distributed in second subarea is sparse, which can correspond to the lower temperature area of the periphery of wafer, and the distribution of flow channel is based on wafer actual temperature distribution, and it is beneficial to accurate temperature control, and realizes the uniform distribution of temperature field. BRIEF DESCRIPTION OF DRAWINGS
[0026] Figure 1 For the flow channel distribution structure diagram of temperature control device of one embodiment of the utility model Figure 1 ;
[0027] Figure 2 For the flow channel distribution structure diagram of temperature control device of one embodiment of the utility model Figure 2 ;
[0028] Figure 3 For the flow channel control structure diagram of temperature control device of one embodiment of the utility model.
[0029] In the drawings:
[0030] 10-temperature control body;11-first subarea;12-second subarea;
[0031] 20-first heat exchange flow channel;21-first curve flow channel;22-first liquid inlet flow channel;23-first liquid outlet flow channel;
[0032] 30-second heat exchange flow channel;31-second curve flow channel;32-second liquid inlet flow channel;33-second liquid outlet flow channel;
[0033] 40-first flow control valve;
[0034] 50 - second flow control valve;
[0035] 60 - liquid supply main pipe;
[0036] a - first reference edge; b - second reference edge; c - first direction. DETAILED DESCRIPTION
[0037] The temperature control device, electrostatic chuck and semiconductor equipment provided by the present application will be further described in detail below in combination with the drawings and specific embodiments. The advantages and features of the present application will be more apparent according to the following description. It should be noted that the drawings are all in a very simplified form and all use non-precise proportions, only for the purpose of facilitating and clarifying the purpose of assisting in the description of the embodiments of the present application.
[0038] As used in the present application, the singular forms "a", "an" and "the" include plural referents, the term "or" is generally used in the sense of "and / or", the term "at least one" is generally used in the sense of "one or more", the term "at least two" or "more" is generally used in the sense of "two or more", and in addition, the terms "first", "second", "third" are only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first", "second", "third" can be explicitly or implicitly included one or at least two of the features. In addition, as used in the present application, "mounting", "connection", "connection", "one element" "set" in another element should be understood broadly, generally only indicates the connection, coupling, cooperation or transmission relationship between the two elements, and the two elements can be directly or indirectly connected, coupled, cooperated or transmitted through intermediate elements, and cannot be understood as indicating or implying the spatial position relationship between the two elements, i.e. one element can be in the interior, exterior, upper, lower or one side of another element, etc. Unless the content is otherwise explicitly indicated. For ordinary skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances. In addition, directional terms such as upper, lower, up, down, left, right, etc. are used with respect to the exemplary embodiments as they are shown in the drawings, upward or upward direction is toward the top of the corresponding drawing, and downward or downward direction is toward the bottom of the corresponding drawing.
[0039] The present embodiment provides a temperature control device, comprising: a temperature control body 10;
[0040] As Figure 1 shown, in the present embodiment, the temperature control body 10 is disc-shaped, which is adapted to the existing electrostatic chuck for adapting to the existing circular wafer shape.
[0041] The temperature control body 10 has a first sub-zone 11 and a second sub-zone 12, wherein the first sub-zone 11 is a cylindrical region located in the central region of the temperature control body 10, and the second sub-zone 12 is an annular region other than the first sub-zone 11, so that the second sub-zone 12 surrounds the first sub-zone 11 and is coaxially arranged with the first sub-zone 11. The first sub-zone 11 and the second sub-zone 12 are natural sub-zones, and there is no other partition structure between the two sub-zones. In combination with Figure 1 Figure 1 Corresponding to the top view of the temperature control body 10, the boundary line between the first sub-zone 11 and the second sub-zone 12 is a dashed annular ring A in the figure, the region located in the annular ring A is the first sub-zone 11, and the region located outside the annular ring A is the second sub-zone 12. Figure 1
[0042] In this embodiment, the radius of the first sub-zone 11 is the same as the radial dimension of the second sub-zone 12, and the temperature control body 10 is uniformly divided to achieve the purpose of uniform temperature control. In other alternative embodiments, the proportion of the first sub-zone 11 and the second sub-zone 12 relative to the temperature control body 10 can be adjusted based on actual temperature control requirements.
[0043] Please continue to refer to Figure 1 As shown in the figure, the temperature control body 10 is provided with a first heat exchange flow channel 20 and a second heat exchange flow channel 30.
[0044] The first heat exchange flow channel 20 includes a first curved flow channel 21, and the first curved flow channel 21 is arranged in the first sub-zone 11 and is arranged in a reciprocating bending manner.
[0045] The second heat exchange flow channel 30 includes a second curved flow channel 31, and the second curved flow channel 31 is arranged in the second sub-zone 12 and is arranged in a reciprocating bending manner.
[0046] The distribution of the first curved flow channel 21 is denser than the distribution of the second curved flow channel 31. Here, dense means that the distance between adjacent flow channels of the first curved flow channel 21 is smaller in the reciprocating bending process, and the distance between adjacent flow channels of the second curved flow channel 31 is larger in the bending process; it can also be understood that the length of the first curved flow channel 21 is greater than the length of the second curved flow channel 31 in a unit volume.
[0047] The temperature control body 10 is divided into a first sub-zone 11 in a central region and a second sub-zone 12 surrounding the first sub-zone 11, and the first curved flow channel 21 is separately arranged in the first sub-zone 11, and the second curved flow channel 31 is separately arranged in the second sub-zone 12, by separately introducing heat exchange medium into each flow channel, the temperature of the first sub-zone 11 and the second sub-zone 12 can be controlled respectively, and the partition control of the wafer temperature field can be realized. In addition, the first sub-zone 11 corresponds to the central position of the temperature control body 10, the first curved flow channel 21 distributed in the first sub-zone 11 is denser, which can correspond to the higher temperature area at the center of the wafer, the second curved flow channel 31 distributed in the second sub-zone 12 is sparser, which can correspond to the lower temperature area at the periphery of the wafer, and the distribution of the flow channel is based on the actual temperature distribution of the wafer, which is beneficial to accurate temperature control and realizes the uniform distribution of the temperature field.
[0048] In the embodiment, the temperature control body 10 is adapted to the existing electrostatic chuck and the wafer shape is set to be disc-shaped. In other alternative embodiments, the shape of the temperature control body 10 can be adaptively adjusted based on the shape of the semiconductor process piece to be actually temperature controlled, and the specific shapes of the first sub-zone 11 and the second sub-zone 12 can also be adaptively adjusted based on the specific shape of the temperature control body 10 and the temperature control requirement.
[0049] In the embodiment, the temperature control body 10 is divided into two regions of the first sub-zone 11 and the second sub-zone 12. In other alternative embodiments, more sub-zones can also be provided, for example, three, four or more sub-zones, and a heat exchange flow channel can be independently arranged in each region, and the number of sub-zones can be adaptively adjusted based on the actual temperature control requirement.
[0050] Please continue to refer to Figure 1 As shown, the first curved flow channel 21 and the second curved flow channel 31 are spiral flow channels. The first curved flow channel 21 is distributed more densely, and the second curved flow channel 31 is distributed more sparsely, which can be understood as that the diameter change rate of the spiral line of the first curved flow channel 21 is smaller, and the diameter change rate of the spiral line of the second curved flow channel 31 is larger. The central axis of the spiral line corresponding to the first curved flow channel 21 and the central axis of the spiral line corresponding to the second curved flow channel 31 are collinear with the central axis of the temperature control body 10. The second curved flow channel 31 surrounds the first curved flow channel 21, and the rotation direction of the first curved flow channel 21 is opposite to that of the second curved flow channel 31. The opposite rotation directions of the two can make the flow channel distribution of the region at the boundary between the first sub-zone 11 and the second sub-zone 12 more smooth, so as to improve the phenomenon of sudden change of flow channel density in this region. In combination with Figure 1As shown, from a top-down view, the boundary between the first section 11 and the second section 12 is a dashed ring A. The outer end 211 of the first curved flow channel 21 is internally tangent to ring A, and the inner end 311 of the second curved flow channel 31 is externally tangent to ring A. Furthermore, the outer end 211 of the first curved flow channel 21 and the inner end 311 of the second curved flow channel 31 are aligned along the first direction c. Figure 2 and Figure 2 The left and right directions (in the middle) are located on both sides of the disk, where the first direction c is perpendicular to the central axis of the temperature control body 10. This arrangement makes the first curved flow channel 21 and the second curved flow channel 31 more evenly distributed at the boundary between the two zones.
[0051] In other alternative embodiments, the first curved flow channel 21 and the second curved flow channel 31 may also be configured as other reciprocating bending structures, such as a U-shaped or S-shaped bending structure.
[0052] Furthermore, the centerline of the first curved flow channel 21 and the centerline of the second curved flow channel 31 are located within the first reference plane a, that is, the first curved flow channel 21 and the second curved flow channel 31 are coplanar. The spiral formed by the first curved flow channel 21 is a planar spiral, and similarly, the spiral formed by the second curved flow channel 31 is a planar spiral.
[0053] Please refer to Figure 2 As shown, Figure 2 The image only shows a portion of the cross-section of the first curved flow channel 21 and a portion of the second curved flow channel 31. The first reference plane a is perpendicular to the central axis of the temperature control body 10. The center of the cross-section of the first curved flow channel 21 is located on the first reference plane a, and similarly, the center of the cross-section of the second curved flow channel 31 is located on the first reference plane a.
[0054] During use, one end of the temperature control body 10 along its axial direction ( Figure 1 The upper end of the temperature control body 10 is attached to the carrier plate of the electrostatic chuck, so the upper end of the temperature control body 10 serves as the temperature control surface for heat exchange with the carrier plate. The first reference surface a is parallel to the temperature control surface. The coplanar arrangement of the first curved flow channel 21 and the second curved flow channel 31 ensures that the first curved flow channel 21 and the second curved flow channel 31 are at the same distance from their temperature control surfaces, thereby achieving more uniform temperature control.
[0055] Please continue to refer to this. Figure 1 As shown, the first heat exchange channel 20 further includes a first liquid inlet channel 22 and a first liquid outlet channel 23. The first liquid inlet channel 22 is connected to the outer end of the first curved channel 21, and the first liquid outlet channel 23 is connected to the inner end of the first curved channel 21.
[0056] The initial temperature of the heat exchange fluid introduced into the first curved flow channel 21 is relatively low. As it flows within the channel, the temperature gradually increases. Liquid enters from the periphery of the first curved flow channel 21 and exits from its center. This allows the newly introduced heat exchange fluid to act on the periphery of the first partition 11. By using a lower-temperature heat exchange fluid to act on a larger peripheral area of the first partition 11, the temperature control area is expanded, improving the temperature control effect. Furthermore, by using a higher-temperature heat exchange fluid to act on a smaller central area of the first partition 11, where the flow channels are relatively denser, a larger volume of heat exchange fluid can be used to control the temperature in the central area, achieving internal and external temperature balance.
[0057] Please continue to refer to this. Figure 2 As shown, the second heat exchange channel 30 also includes a second inlet channel 32 and a second outlet channel 33. The second inlet channel 32 is connected to the outer end of the second curved channel 31, and the second outlet channel 33 is connected to the inner end of the second curved channel 31. Similarly, by applying a lower-temperature heat exchange fluid to the larger peripheral area of the second partition 12, the temperature control area is expanded, improving the temperature control effect. Furthermore, by applying a higher-temperature heat exchange fluid to the inner periphery of the second partition 12, the channels in the central region are relatively more densely packed, allowing for a larger volume of heat exchange fluid to control the temperature of the inner periphery of the second partition 12, achieving internal and external temperature balance. Moreover, at the boundary between the first partition 11 and the second partition 12, the temperature of the heat exchange fluid on the periphery of the first curved channel 21 is lower, while the temperature of the heat exchange fluid on the inner side of the second heat exchange channel 30 is higher. The two temperatures cancel each other out, preventing the temperature at the boundary between the first partition 11 and the second partition 12 from becoming too high or too low.
[0058] For further details, please refer to... Figure 1 As shown, the center lines of the first liquid inlet channel 22 and the first liquid outlet channel 23 are located within the second reference plane b, and the second reference plane b is parallel to the first reference plane a.
[0059] The first inlet channel 22 and the first outlet channel 23 are straight channels, and they extend along a first direction c. The first inlet channel 22 extends along the positive direction of the first direction c. Figure 2 and Figure 1 The first liquid outlet channel 23 extends to the left side of the first direction c and penetrates to the left outer wall of the temperature control body 10. Figure 2 and Figure 2The first heat exchange channel 20 extends to the right side of the first direction (c) and penetrates to the right outer wall of the temperature control body 10. The liquid inlet and liquid outlet of the first heat exchange channel 20 are respectively located on the left and right sides of the temperature control body 10 to prevent the liquid inlet and liquid outlet from being too close to each other and causing thermal interference.
[0060] Here, the positive and negative directions of the first direction c refer to the two opposite sides along the straight line, and the specific orientation of the positive and negative directions is not limited.
[0061] Furthermore, the centerlines of the second inlet channel 32 and the second outlet channel 33 are also located within the second reference plane b, that is, the first inlet channel 22, the first outlet channel 23, the second inlet channel 32 and the second outlet channel 33 are coplanar.
[0062] Combination Figure 2 As shown, the second reference plane b is located below the first reference plane a, and the temperature control surface of the temperature control body 10 ( Figure 2 The upper end of the temperature control body 10 is located above the first reference plane a. This structure causes the first liquid inlet channel 22, the first liquid outlet channel 23, the second liquid inlet channel 32, and the second liquid outlet channel 33 to be located away from the temperature control surface ( Figure 1 The upper part of the temperature control body 10 is located on the side further away to prevent the aforementioned inlet and outlet channels from interfering with the temperature of the temperature control surface.
[0063] Combination Figure 1 As shown, the second inlet channel 32 and the second outlet channel 33 extend along the first direction c, and the second inlet channel 32 extends along the positive direction of the first direction c. Figure 2 and Figure 1 The second liquid outlet channel 33 extends to the left side of the first direction c and penetrates to the left outer wall of the temperature control body 10. Figure 2 and Figure 1 The first direction (c) extends to the right side and penetrates to the right outer wall of the temperature control body 10. The liquid inlet and liquid outlet of the second heat exchange channel 30 are respectively located on the left and right sides of the temperature control body 10 to prevent the liquid inlet and liquid outlet from being too close and causing mutual thermal interference.
[0064] Combination Figure 1 As shown, the first liquid inlet channel 22 and the second liquid inlet channel 32 are located on the same side. Figure 2 and Figure 1 The first liquid outlet channel 23 and the second liquid outlet channel 33 are located on the same side (on the left side of the temperature control body 10). Figure 2 and Figure 3 (Right side of the temperature control unit 10) facilitates the management of liquid inlet and outlet.
[0065] Combination As shown, in the embodiment, the first liquid inlet flow channel 22 is provided with a first flow control valve 40, and the second liquid inlet flow channel 32 is provided with a second flow control valve 50. The first liquid inlet flow channel 22 and the second liquid inlet flow channel 32 are connected with the liquid supply main pipe 60 through external pipelines. The flow rates of the first liquid inlet flow channel 22 and the second liquid inlet flow channel 32 are controlled by the opening degrees of the first flow control valve 40 and the second flow control valve 50, so as to flexibly adjust the flow rates of the heat exchange medium in the first heat exchange flow channel 20 and the second heat exchange flow channel 30.
[0066] The above arrangement makes the first liquid inlet flow channel 22, the first liquid outlet flow channel 23, the second liquid inlet flow channel 32 and the second liquid outlet flow channel 33 penetrate the outer circumferential surface of the temperature control body 10 along a direction perpendicular to the central axis of the temperature control body 10. This arrangement makes the lower end surface of the temperature control body 10 not affected by the openings of the first heat exchange flow channel 20 and the second heat exchange flow channel 30, and the pipeline circumscribed by the first heat exchange flow channel 20 and the second heat exchange flow channel 30 also does not affect the lower end surface of the temperature control body 10, which is beneficial to the flexible installation of the temperature control body 10.
[0067] Further, the first heat exchange flow channel 20 and the second heat exchange flow channel 30 are both circular flow channels, i.e., the cross sections of both are circular. The inner diameter of the first heat exchange flow channel 20 is the same as that of the second heat exchange flow channel 30, so that the developed areas per unit length of the first heat exchange flow channel 20 and the second heat exchange flow channel 30 are the same, so as to reduce the variable factors affecting heat exchange. During the temperature control process, only the flow rates of the heat exchange medium supplied into the first heat exchange flow channel 20 and the second heat exchange flow channel 30 need to be considered to adjust the temperature control capability, which is helpful to simplify the temperature control process.
[0068] In other alternative embodiments, the first heat exchange flow channel 20 and the second heat exchange flow channel 30 can also adjust the shapes of their cross sections based on the temperature control requirements.
[0069] In the embodiment, an electrostatic chuck is also provided, which comprises the above-mentioned temperature control device. The electrostatic chuck further comprises a carrier plate having a carrier surface for carrying a wafer. The temperature control device is attached to the side of the carrier plate opposite to the carrier surface, and is used for temperature control of the carrier plate, so as to adjust the temperature field distribution of the wafer carried thereon. The electrostatic chuck in the embodiment is different from the existing electrostatic chuck in that the temperature control device is different, and the rest of the structure can be consistent with the structure of the existing electrostatic chuck, which will not be described here.
[0070] In the embodiment, a semiconductor equipment is also provided, which is installed with the above-mentioned electrostatic chuck. The semiconductor equipment has a process cavity, and the electrostatic chuck is arranged in the process cavity. The semiconductor equipment can be an etching equipment or a chemical vapor deposition equipment, a physical vapor deposition equipment or other equipment with an electrostatic chuck.
[0071] The various embodiments described in this specification are presented by way of example, and each embodiment is not necessarily limited to the features described with respect to other embodiments.
[0072] The above description is only a description of the preferred embodiments of the present application, and is not intended to limit the scope of the present application in any way. Any modification or improvement made by a person skilled in the art based on the above disclosure is within the scope of protection of the claims.
Claims
1. A temperature control device, characterized by, The temperature control device comprises: a temperature control body; the temperature control body has a first sub-zone and a second sub-zone, the second sub-zone surrounding the first sub-zone; the temperature control body is provided with a first heat exchange flow channel and a second heat exchange flow channel; the first heat exchange flow channel comprises a first curved flow channel, which is arranged in the first sub-zone and reciprocally bent; the second heat exchange flow channel comprises a second curved flow channel, which is arranged in the second sub-zone and reciprocally bent; the distribution of the first curved flow channel is denser than that of the second curved flow channel.
2. The temperature control device of claim 1, wherein The first curved flow channel and the second curved flow channel are spiral flow channels, the second curved flow channel surrounds the first curved flow channel, and the rotation direction of the first curved flow channel is opposite to that of the second curved flow channel.
3. The temperature control device as described in claim 2, characterized in that, The center line of the first curved flow channel and the center line of the second curved flow channel are located in a first reference plane.
4. The temperature control device of claim 3, wherein the temperature control device is configured to control the temperature of the temperature control device to a temperature within a range of 20- 30 degrees Celsius. The first heat exchange flow channel further comprises a first liquid inlet flow channel and a first liquid outlet flow channel, the first liquid inlet flow channel being in communication with the outer end of the first curved flow channel, and the first liquid outlet flow channel being in communication with the inner end of the first curved flow channel; and / or, the second heat exchange flow channel further comprises a second liquid inlet flow channel and a second liquid outlet flow channel, the second liquid inlet flow channel being in communication with the outer end of the second curved flow channel, and the second liquid outlet flow channel being in communication with the inner end of the second curved flow channel.
5. The temperature control device of claim 4, wherein the temperature control device is configured to control the temperature of the temperature control device to a temperature within a range of 20-30 degrees Celsius. The center line of the first liquid inlet flow channel and the first liquid outlet flow channel is located in a second reference plane, which is parallel to the first reference plane; and / or, the center line of the second liquid inlet flow channel and the second liquid outlet flow channel is located in a second reference plane, which is parallel to the first reference plane.
6. The temperature control device of claim 4, wherein the temperature control device is configured to control the temperature of the temperature control device to a temperature within a range of 20- 30 degrees Celsius. The first liquid inlet flow channel and the first liquid outlet flow channel extend along a first direction, which is parallel to the first reference plane; and / or, the second liquid inlet flow channel and the second liquid outlet flow channel extend along a first direction, which is parallel to the first reference plane.
7. The temperature control device of claim 6, wherein the temperature control device is configured to control the temperature of the temperature control device to a temperature within a range of 20- 30 degrees Celsius. The first liquid inlet flow channel and the second liquid inlet flow channel extend in the positive direction of the first direction and penetrate through the outer wall of the temperature control body, and the first liquid outlet flow channel and the second liquid outlet flow channel extend in the negative direction of the first direction and penetrate through the outer wall of the temperature control body.
8. The temperature control device of claim 1, wherein the temperature control device is configured to be used in a medical procedure. The inner diameter of the first heat exchange flow channel is the same as that of the second heat exchange flow channel.
9. An electrostatic chuck, comprising: The temperature control device as claimed in any one of claims 1 to 8.
10. A semiconductor device, characterized by comprising: The semiconductor equipment is provided with the electrostatic chuck as claimed in claim 9.