Chemical vapor deposition nozzle and chemical vapor deposition equipment

By designing the nozzle body and collar, the gas flow resistance is adjusted to control the film deposition thickness, thus solving the problem of uneven wafer film thickness and improving film uniformity and product quality.

CN223674737UActive Publication Date: 2025-12-16HUBEI XINGCHEN TECH CO LTD
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
CN202520037617.4
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-01-07
Publication Date
2025-12-16
Estimated Expiration
2035-01-07

AI Technical Summary

Technical Problem

In existing chemical vapor deposition equipment, the uneven distribution of plasma and the unevenness of the spray holes lead to large differences in film thickness between the middle and the edge of the wafer, which affects film uniformity and product quality.

Method used

The nozzle body and collar structure are adopted. The gas flow resistance is adjusted by adjusting the length of the second adjustment hole on the collar inserted into the first adjustment hole, thereby controlling the film deposition thickness and ensuring film uniformity.

Benefits of technology

It achieves uniformity in thin film deposition and improves product quality. It has a simple structure, low production cost, and is easy to maintain.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN223674737U_ABST
    Figure CN223674737U_ABST
Patent Text Reader

Abstract

The utility model relates to a chemical vapor deposition spray head and chemical vapor deposition equipment, and relates to the technical field of chemical vapor deposition. The chemical vapor deposition spray head comprises a spray head body and a lantern ring, the spray head body is provided with a gas inlet channel, the spray head body is provided with a plurality of spraying holes and first adjusting holes which are communicated with the gas inlet channel at intervals, the lantern ring is provided with a plurality of second adjusting holes, and the hole diameter of the second adjusting holes is smaller than that of the first adjusting holes. The lantern ring is movably connected with the spray head body and used for adjusting the gas flow resistance at the first adjusting hole through the second adjusting hole. The lantern ring is used for adjusting the gas flow resistance at the first adjusting hole, for example, the gas flow resistance at the first adjusting hole is changed by controlling the length, inserted into the first adjusting hole, of the second adjusting hole, so that the film thickness of the corresponding area is adjusted, and the uniformity of the film is guaranteed. And the film uniformity can be ensured only by adjusting the gas flow resistance through the lantern ring, the overall structure is simple, and the production cost is low.
Need to check novelty before this filing date? Find Prior Art

Description

TECHNICAL FIELD

[0001] The utility model relates to chemical vapor deposition technical field, specifically, relate to a kind of chemical vapor deposition showerhead and chemical vapor deposition equipment. BACKGROUND

[0002] At present, semiconductor chemical vapor deposition equipment is mostly designed to disperse into the process cavity gas to improve the uniformity of film deposition, and the current showerhead design mostly adopts single-layer design, and the hole shape is mostly cylindrical straight hole or conical hole.

[0003] The plasma-enhanced chemical vapor deposition process chamber is more common in the current vapor deposition process chamber. Due to the uneven distribution of plasma, the unevenness of the showerhead and the spray hole of the chamber, the deposition film thickness of the middle and edge of the wafer (300mm wafer, radius 135mm outside) often has great difference, which further leads to poor uniformity of the overall film, affecting product quality. SUMMARY

[0004] The utility model aims to provide a kind of chemical vapor deposition showerhead and chemical vapor deposition equipment for solving the above technical problems.

[0005] In the first aspect, the utility model embodiment provides a kind of chemical vapor deposition showerhead, it includes showerhead main part and collar, the showerhead main part is equipped with gas inlet passage, the showerhead main part is spaced apart and equipped with a plurality of with gas inlet passage communication spray hole and first adjusting hole, the collar is equipped with a plurality of second adjusting hole, the aperture of second adjusting hole is less than the aperture of first adjusting hole, the collar is connected with the showerhead main part, and second adjusting hole and first adjusting hole are communicated one by one, and the collar is used for adjusting the gas flow resistance at first adjusting hole by second adjusting hole.

[0006] Optionally, the side of the collar close to the first adjusting hole is provided with a sealing part, the sealing part is slidingly inserted into the first adjusting hole, and the second adjusting hole is communicated with the first adjusting hole through the sealing part.

[0007] Optionally, the showerhead main part is provided with an adjusting assembly, and the adjusting assembly is used to adjust the length of the sealing part inserted into the first adjusting hole.

[0008] Optionally, the adjusting assembly includes an adjusting screw, the showerhead main part is provided with an adjusting screw hole, one end of the adjusting screw is rotatably connected with the collar, and the adjusting screw is arranged in the adjusting screw hole, and the adjusting screw is driven to rotate to adjust the length of the sealing part inserted into the first adjusting hole.

[0009] Optionally, the collar is provided as a circular ring structure, the first adjusting hole is spaced apart and arranged on the showerhead main part in the circumferential direction, and the position of the first adjusting hole corresponds to the second adjusting hole.

[0010] Optionally, each spray hole comprises a first exhaust portion and a second exhaust portion, the first exhaust portion has a larger hole diameter than the second exhaust portion.

[0011] Optionally, the first exhaust portion has a hole diameter of m, and the second exhaust portion has a hole diameter of n, then 3.5mm≤m-n≤4.0mm.

[0012] Optionally, the first exhaust portion has a length of 11.5-12.5mm.

[0013] Optionally, a sealing member is arranged at the connection between the first adjusting hole and the second adjusting hole.

[0014] In another aspect, the utility model also provides a chemical vapor deposition equipment, it includes gas generator, deposition chamber and the chemical vapor deposition shower head of any one of above, the chemical vapor deposition shower head is arranged in the deposition chamber, and the chemical vapor deposition shower head is connected with gas generator.

[0015] The chemical vapor deposition shower head provided by the embodiment of the application comprises a shower head body and a sleeve ring, the shower head body is provided with an air inlet channel, a plurality of spray holes and first adjusting holes are arranged on the shower head body in a spaced manner and are in communication with the air inlet channel, a plurality of second adjusting holes are arranged on the sleeve ring, the hole diameter of the second adjusting holes is smaller than the hole diameter of the first adjusting holes, the sleeve ring is movably connected with the shower head body, and the second adjusting holes and the first adjusting holes are in one-to-one correspondence and in communication, and the sleeve ring is used for adjusting the gas flow resistance at the first adjusting holes. For example, by controlling the length of the second adjusting holes inserted into the first adjusting holes, the gas flow resistance at the first adjusting holes is changed, so that the film thickness of the corresponding area is adjusted, and the uniformity of the film is ensured. The film uniformity can be ensured only by adjusting the gas flow resistance through the sleeve ring, the overall structure is simple, and the production cost is low. BRIEF DESCRIPTION OF DRAWINGS

[0016] In order to more clearly illustrate the technical solutions of the embodiments of the application, the following will briefly introduce the drawings needed to be used in the embodiments of the application. It should be understood that the following drawings only show some embodiments of the application, and therefore should not be regarded as a limitation to the scope. For those skilled in the art, other related drawings can also be obtained without creative labor on the basis of these drawings.

[0017] Figure 1 The cross-sectional view of the chemical vapor deposition shower head provided by the embodiment of the application is shown in the figure.

[0018] Figure 2 The cross-sectional view of the sleeve ring in the chemical vapor deposition shower head provided by the embodiment of the application is shown in the figure.

[0019] Figure 3 The use state diagram of the chemical vapor deposition shower head provided by the embodiment of the application is shown in the figure.

[0020] Figure 4 A bottom view of the sleeve ring of the chemical vapor deposition showerhead provided by the embodiment of the present application is shown in FIG. 2.

[0021] Figure 5 A bottom view of the sleeve ring of the chemical vapor deposition showerhead provided by the embodiment of the present application is shown in FIG. 2. Figure 1 An enlarged view of the A area in FIG. 1.

[0022] Legend: 100 - showerhead body; 200 - sleeve ring; 101 - gas inlet channel; 102 - spray hole; 103 - first adjusting hole; 201 - second adjusting hole; 202 - sealing part; 300 - adjusting screw; 1021 - first exhaust part; 1022 - second exhaust part. DETAILED DESCRIPTION

[0023] In order to make the purpose, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions of the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are some embodiments of the present application, but not all the embodiments of the present application. The components of the embodiments of the present application described and shown in the drawings herein can be arranged and designed in various different configurations.

[0024] In the description of the present application, it should be noted that the positions or location relationships indicated by the terms “inner”, “outer” and the like are based on the positions or location relationships shown in the drawings, or the positions or location relationships in which the products of the present application are usually placed, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms “first”, “second” and the like are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0025] In the description of the present application, it should be noted that, unless otherwise explicitly specified and limited, the terms “set”, “connected” should be understood broadly, for example, can be fixedly connected, can be detachably connected, or integrally connected; can be directly connected, or indirectly connected through an intermediate medium; can be the communication inside two elements. For those skilled in the art, the specific meanings of the above terms in the present application can be understood according to the specific circumstances.

[0026] Please refer to Figure 1As shown, the inside of the shower head body 100 is hollow, and a cavity for dispersing gas is formed inside. An air inlet is formed on the top or side of the shower head body, and the air inlet is in communication with the cavity inside the shower head body to form an air inlet channel 101. A plurality of spray holes 102 are formed at the lower end of the shower head body 100 and are in communication with the air inlet channel 101. The gas enters the inside of the shower head body from the air inlet and is uniformly dispersed and sprayed from the spray holes 102, so as to improve the uniformity of the deposited film as much as possible. However, due to the uneven distribution of gas components and the unevenness of the shower head body 100, there is often a large difference in the thickness of the deposited film between the center and the edge of the wafer, which further leads to poor uniformity of the overall film. Therefore, a sleeve 200 is arranged on the shower head body 100, a plurality of first adjusting holes 103 are formed on the shower head body 100 at intervals, a plurality of second adjusting holes 201 are formed on the sleeve 200 at corresponding positions, and the second adjusting holes 201 are in one-to-one correspondence with the first adjusting holes 103. The diameter of the second adjusting hole 201 is smaller than the diameter of the first adjusting hole 103. In this way, the gas flow resistance at the first adjusting hole 103 is changed after the first adjusting hole 103 and the second adjusting hole 201 are connected, the deposition thickness of the corresponding area of the film is adjusted, and the uniformity of the deposition of the film on the surface of the product is ensured.

[0027] The sleeve 200 is detachably connected with the shower head body 100. On the one hand, sleeves 200 with different lengths of second adjusting holes 201 can be produced, and different sleeves 200 can be replaced according to needs during use, so as to adjust the gas flow resistance at the first adjusting hole 103 and ensure the uniformity of the deposited film. On the other hand, the sleeve 200 can be detached and replaced during use, so as to maintain the sleeve 200 or the shower head body 100 and prolong the service life of the shower head body 100.

[0028] It should be noted that the spray holes 102 are arranged in an array on the shower head body 100, and the positions of the first adjusting holes 103 are determined according to the non-uniform positions of the deposited film. For example, if there is a large difference in the thickness of the film at the center and the edge of the wafer after deposition, the first adjusting hole 103 and the sleeve 200 are arranged at the edge position of the shower head body 100, so as to adjust the gas flow resistance at the edge of the gas shower head, change the thickness of the film at the edge of the wafer, and make the deposited film on the wafer surface more uniform. Similarly, the first adjusting hole 103 and the sleeve 200 can also be arranged at the center of the shower head body 100 to adjust the thickness of the film at the center of the wafer. The specific arrangement position of the first adjusting hole 103 and the sleeve 200 is not limited, and the adjustment can be made according to the actual need to adjust the area of the film thickness.

[0029] Optionally, in some possible embodiments, a sealing portion 202 is arranged on one side of the sleeve 200 close to the first adjusting hole 103, the sealing portion 202 is inserted into the first adjusting hole 103, and the second adjusting hole 201 penetrates through the sealing portion 202 and is in communication with the first adjusting hole 103.

[0030] Please refer to Figure 2 and Figure 4 As shown in the drawings, the side of the collar 200 close to the first adjusting hole 103 is provided with a sealing part 202 protruding from the surface of the collar 200, the sealing part 202 is adapted in shape and size to the first adjusting hole 103, and the second adjusting hole 201 penetrates the sealing part 202, so that the sealing part 202 forms a tubular structure. During installation, the sealing part 202 is inserted into the first adjusting hole 103 one by one, and the peripheral wall of the sealing part 202 is attached to the inner wall of the first adjusting hole 103 to play a sealing role, so as to ensure that the gas is sprayed out through the first adjusting hole 103 and the second adjusting hole 201, and avoid the gas flowing out from the gap between the first adjusting hole 103 and the collar 200, which affects the deposition effect of the film.

[0031] Optionally, in some possible embodiments, the shower head body 100 is provided with an adjusting assembly, and the adjusting assembly is used to adjust the depth of the first adjusting hole 103.

[0032] It can be understood that the depth of the first adjusting hole 103 affects the flow resistance at the first adjusting hole 103 and the second adjusting hole 201. Since the length of the second adjusting hole 201 on the collar 200 is fixed, the gas flow resistance at the first adjusting hole 103 can be adjusted by changing the depth of the first adjusting hole 103, so as to adjust the amount of gas flowing out from the first adjusting hole 103 and the second adjusting hole 201, change the deposition rate of the film in the corresponding area, and realize the adjustment of the deposition film thickness.

[0033] Optionally, in some possible embodiments, the adjusting assembly includes an adjusting screw 300, the shower head body 100 is provided with an adjusting screw hole, one end of the adjusting screw 300 is rotationally connected with the collar 200, and the adjusting screw 300 is arranged in the adjusting screw hole, and the adjusting screw 300 is driven to rotate to adjust the length of the sealing part 202 inserted into the first adjusting hole 103.

[0034] Please refer to Figure 3As shown, the sealing part 202 can slide along the first adjusting hole 103, the longer the length of the sealing part 202 inserted into the first adjusting hole 103, the shorter the length of the first adjusting hole 103, and the shorter the jet channel formed by the first adjusting hole 103 and the second adjusting hole 201; on the contrary, the shorter the length of the sealing part 202 inserted into the first adjusting hole 103, the longer the length of the first adjusting hole 103, and the longer the jet channel formed by the first adjusting hole 103 and the second adjusting hole 201. By adjusting the length of the gas channel to change the gas flow resistance, the deposition rate of the thin film is adjusted to ensure the uniformity of the thin film. The adjusting screw hole on the nozzle body 100 cooperates with the adjusting screw to form a screw adjusting mechanism, and the length of the sealing part 202 inserted into the first adjusting hole 103 can be adjusted by the position of the screw adjusting sleeve 200, so as to change the gas flow resistance. The whole adjusting mechanism has simple structure, low cost, and can realize stepless adjustment. The screw adjusting mechanism itself has self-locking effect, which ensures the stability of the sleeve 200.

[0035] Optionally, in some possible embodiments, the sleeve 200 is provided in a circular ring structure, the first adjusting hole 103 is arranged on the nozzle body 100 in a circumferential interval, and the positions of the first adjusting hole 103 and the second adjusting hole 201 correspond.

[0036] Please refer to Figure 1 and Figure 3 As shown, the sleeve 200 is provided in a circular structure, the spray holes 102 are arranged in a circular array at the center position of the nozzle body 100, and a large area of gas spraying is realized. The first adjusting hole 103 is arranged in a circumferential array at the edge position of the nozzle body 100, and the corresponding sleeve 200 is also provided in a circular ring structure. It can be understood that the existing wafer products are usually in a disc structure, and the spray holes 102 arranged in a circular array can better adapt to the disc-shaped wafer product. The spray holes 102 arranged in a circular array often have inconsistent film thickness at the edge and center of the wafer during the film deposition process, therefore, the first adjusting hole 103 and the sleeve 200 are arranged at the edge position of the spray hole 102 to adjust the deposition thickness of the outer ring film.

[0037] Optionally, in some possible embodiments, each spray hole 102 includes a first exhaust part 1021 and a second exhaust part 1022, and the aperture of the first exhaust part 1021 is larger than the aperture of the second exhaust part 1022.

[0038] Please refer to Figure 5 As shown, each spray hole 102 is provided in a multi-section structure with thick upper part and thin lower part, the gas can be uniformly dispersed and sprayed out of the spray hole 102 by changing the hole type, so as to ensure that the film deposition efficiency of each area of the wafer remains consistent, and the uniformity of the film is further improved.

[0039] Optionally, in some possible embodiments, the spray holes 102 can also be arranged in a conical structure with a large upper end and a small lower end.

[0040] Optionally, in some possible embodiments, the first exhaust part 1021 has a hole diameter of m, and the second exhaust part 1022 has a hole diameter of n, and 3.5 mm≤m-n≤4.0 mm.

[0041] Please refer to Figure 1 As shown in FIG. 1, the spray holes 102 are arranged in a circular array on the lower end surface of the nozzle body 100 to form an inner circle hole, and the radius of the inner circle is 135 mm. The first adjusting holes 103 are arranged in a circumferential array on the outside of the spray holes 102 to form an outer circle hole. The hole diameter and spacing of the spray holes 102 affect the uniformity of the deposited film, so the spray holes 102 are relatively dense, have a small spacing, and have a large number, so that the dispersion of the body can be fast and uniform, and the amount of gas in each area is relatively consistent to ensure the uniformity of the film. Therefore, the hole diameter of the first exhaust part 1021 is 11.8-12.2 mm, and the spacing of the first exhaust part 1021 is 1.5-2.0 mm. When the hole diameter of the first exhaust part 1021 is too large, the dispersion effect of the gas is poor, and a certain gas pressure cannot be formed inside the nozzle body 100, which affects the spraying and deposition effect. Conversely, when the hole diameter of the first exhaust part 1021 is too small, not only is the processing difficult and the processing cost is high, but also the gas flow rate and deposition rate during deposition are difficult to control, which affects the quality of the film. The hole diameter of the second exhaust part 1022 is smaller than that of the first exhaust part 1021, the hole diameter of the first exhaust part 1021 is m, and the hole diameter of the second exhaust part 1022 is n, and 3.5 mm≤m-n≤4.0 mm. If the hole diameter of the second exhaust part 1022 is too small, the gas flow rate of a single spray hole 102 will be too large, which will affect the deposition uniformity. Conversely, if the hole diameter of the second exhaust part 1022 is too small, the deposition efficiency will be low, which will affect the production efficiency. Optionally, the length of the first exhaust part 1021 is set to 11.5-12.5 mm to ensure that the gas resistance at the spray hole 102 is suitable for the wafer, and to improve the uniformity of the film.

[0042] Optionally, a sealing member is arranged at the connection between the first adjusting hole 103 and the second adjusting hole 201. The sealing member can be filled with a sealing liquid or arranged with an interference fit at the connection between the first adjusting hole 103 and the second adjusting hole 201, so as to ensure the sealing of the connection between the first adjusting hole 103 and the second adjusting hole 201, so that the gas can be sprayed out through the first adjusting hole 103 and the second adjusting hole 201, and gas leakage is avoided.

[0043] The utility model embodiment further provides a kind of chemical vapor deposition equipment, it includes gas generator, deposition chamber and above-mentioned chemical vapor deposition shower head, chemical vapor deposition shower head is set in deposition chamber, and chemical vapor deposition shower head is connected with gas generator.This embodiment provides the chemical vapor deposition equipment using above-mentioned chemical vapor deposition shower head, can guarantee the uniformity of deposition film, improve product quality.

[0044] It should be noted that the features of the embodiments of the present application can be combined with each other without conflict.

[0045] The above is only the preferred embodiment of the present application and is not intended to limit the present application. Those skilled in the art can make various modifications and changes to the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. A chemical vapor deposition showerhead, characterized by, The shower head comprises a shower head body (100) and a sleeve ring (200), the shower head body (100) is provided with an air inlet channel (101), a plurality of spray holes (102) and first adjusting holes (103) are arranged on the shower head body (100) in a spaced manner and are communicated with the air inlet channel (101), a plurality of second adjusting holes (201) are arranged on the sleeve ring (200), the second adjusting holes (201) have a smaller diameter than the first adjusting holes (103), the sleeve ring (200) is connected with the shower head body (100), the second adjusting holes (201) are communicated with the first adjusting holes (103) in a one-to-one correspondence, and the sleeve ring (200) is used for adjusting the air flow resistance at the first adjusting holes (103) through the second adjusting holes (201).

2. The chemical vapor deposition showerhead of claim 1, wherein, The sleeve ring (200) is provided with a sealing part (202) on one side close to the first adjusting holes (103), the sealing part (202) is inserted into the first adjusting holes (103), and the second adjusting holes (201) are communicated with the first adjusting holes (103) through the sealing part (202).

3. The chemical vapor deposition showerhead of claim 2, wherein, An adjusting assembly is arranged on the shower head body (100) and is used for adjusting the length of the sealing part (202) inserted into the first adjusting holes (103).

4. The chemical vapor deposition showerhead of claim 3, wherein, The adjusting assembly comprises an adjusting screw (300), the shower head body (100) is provided with an adjusting screw hole, one end of the adjusting screw (300) is rotationally connected with the sleeve ring (200), the adjusting screw (300) is arranged in the adjusting screw hole, and the adjusting screw (300) is driven to rotate so as to adjust the length of the sealing part (202) inserted into the first adjusting holes (103).

5. The chemical vapor deposition showerhead of claim 1, wherein, The sleeve ring (200) is arranged in a circular ring structure, the first adjusting holes (103) are arranged on the shower head body (100) in a circumferential spaced manner, and the positions of the first adjusting holes (103) correspond to the positions of the second adjusting holes (201).

6. The chemical vapor deposition showerhead of claim 1, wherein, Each of the spray holes (102) comprises a first air outlet part (1021) and a second air outlet part (1022), the first air outlet part (1021) has a larger diameter than the second air outlet part (1022).

7. The chemical vapor deposition showerhead of claim 6, wherein, The diameter of the first air outlet part (1021) is m, the diameter of the second air outlet part (1022) is n, and 3.5mm≤m-n≤4.0mm.

8. The chemical vapor deposition showerhead of claim 6, wherein, The length of the first air outlet part (1021) is 11.5-12.5mm.

9. The chemical vapor deposition showerhead of claim 1, wherein, A sealing member is arranged at the connection between the first adjusting hole (103) and the second adjusting hole (201).

10. A chemical vapor deposition apparatus characterized by comprising: The shower head comprises a gas generator, a deposition chamber and the chemical vapor deposition shower head according to any one of claims 1-9, the chemical vapor deposition shower head is arranged in the deposition chamber, and the chemical vapor deposition shower head is connected with the gas generator.