Full-color LED display structure and display panel
By reflecting blue, green, or ultraviolet light to excite the quantum dot layer to emit red light through the quantum dot layer and filter layer in the full-color LED display structure, the luminous efficiency of red light is improved, achieving full-color display and solving the problem of low luminous efficiency of red light.
Patent Information
- Application Number
- CN202520284496.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-21
- Publication Date
- 2025-12-26
- Estimated Expiration
- 2035-02-21
AI Technical Summary
Red light luminescence efficiency is low in LED epitaxial wafers, and gallium arsenide-based materials are fragile, brittle, and difficult to transfer.
It adopts a full-color LED display structure, including a first color light-emitting element, a second color light-emitting element and a third color light-emitting element. The quantum dot layer is excited by blue light or green light to emit red light, and the filter layer is used to reflect non-red light to improve the red light emission efficiency.
It achieves full-color display and improves the luminous efficiency of red light, solving the problem of low luminous efficiency of red light, while avoiding the fragility and brittleness of gallium arsenide-based materials.
Smart Images
Figure CN223730215U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to a semiconductor technical field especially relates to a full color LED display structure and display panel. BACKGROUND
[0002] LED epitaxial wafer has very high application prospect in inorganic light emitting diode field, however, red light epitaxial wafer has low luminous efficiency, and gallium arsenide-based material has problems such as being fragile and brittle, and being difficult to transfer. SUMMARY
[0003] The utility model provides a full color LED display structure and display panel can realize full color display, improve red light luminous efficiency.
[0004] According to one aspect of the utility model, a full color LED display structure is provided, comprising:
[0005] The first color light emitting element includes a first light emitting unit and a quantum dot layer, and the quantum dot layer is located on one side of the first light emitting unit. The first light emitting unit includes a plurality of first sub-light emitting units, and the quantum dot layer covers the plurality of first sub-light emitting units. The first light emitting unit excites the quantum dot layer to emit red light. The first light emitting unit is used to emit blue light, green light or ultraviolet light shorter than blue light in wavelength.
[0006] The first passivation layer is located on the side of the first light emitting unit away from the quantum dot layer, and the first passivation layer covers the first sub-light emitting units and part of the quantum dot layer. The quantum dot layer covers part of the first passivation layer that is not covered by the first sub-light emitting units.
[0007] The light filter layer is located on the side of the quantum dot layer away from the first light emitting unit, and the light filter layer covers the quantum dot layer.
[0008] The second color light emitting unit is located on the side of the light filter layer away from the first light emitting unit. The second color light emitting unit includes a plurality of second sub-light emitting units, and each second sub-light emitting unit corresponds to a first sub-light emitting unit.
[0009] The third color light emitting unit is located on the side of the second color light emitting unit away from the light filter layer. The third color light emitting unit includes a plurality of third sub-light emitting units, and each third sub-light emitting unit corresponds to a second sub-light emitting unit.
[0010] The light filter layer is used to transmit red light, reflect blue light, green light or ultraviolet light shorter than blue light in wavelength.
[0011] Optionally, the second color light emitting unit is a green light LED unit, and the third color light emitting unit is a blue light LED unit.
[0012] Optionally, the full-color LED display structure further comprises:
[0013] The isolation layer is located between adjacent first sub-light emitting units, between adjacent second sub-light emitting units, and between adjacent third sub-light emitting units.
[0014] Optionally, the isolation layer is a metal layer or a black resin layer.
[0015] Optionally, the full-color LED display structure further comprises:
[0016] The driving substrate is located on the side of the first passivation layer away from the third color light emitting unit.
[0017] The driving substrate comprises a first electrode contact and a second electrode contact, and the first electrode contact and the second electrode contact are located on the side of the driving substrate adjacent to the first passivation layer.
[0018] Optionally, the first sub-light emitting unit comprises a first semiconductor layer, a first light emitting layer, and a second semiconductor layer stacked in sequence; in the first sub-light emitting unit, the first semiconductor layer is located on the side of the second semiconductor layer adjacent to the driving substrate.
[0019] The second sub-light emitting unit comprises a first semiconductor layer, a second light emitting layer, and a second semiconductor layer stacked in sequence; in the second sub-light emitting unit, the first semiconductor layer is located on the side of the second semiconductor layer adjacent to the driving substrate.
[0020] The third sub-light emitting unit comprises a first semiconductor layer, a third light emitting layer, and a second semiconductor layer stacked in sequence; in the third sub-light emitting unit, the first semiconductor layer is located on the side of the second semiconductor layer away from the driving substrate.
[0021] Optionally, the full-color LED display structure further comprises:
[0022] The first conductive layer is located on the side of the second semiconductor layer away from the first semiconductor layer, and the first conductive layer covers at least part of the second semiconductor layer.
[0023] The second conductive layer is located on the side of the first semiconductor layer away from the second semiconductor layer, and the second conductive layer covers at least part of the first semiconductor layer.
[0024] Optionally, the full-color LED display structure further comprises:
[0025] The first conductive via and the second conductive via; the first conductive layer is electrically connected to the first electrode contact through the first conductive via; and the second conductive layer is electrically connected to the second electrode contact through the second conductive via.
[0026] Optionally, the full-color LED display structure further comprises:
[0027] A second passivation layer is located between the filter layer and the second light emitting sub-unit, between adjacent second light emitting sub-units, between the second light emitting sub-unit and the third light emitting sub-unit, and between adjacent third light emitting sub-units.
[0028] According to an aspect of the present application, a display panel is provided, comprising the full-color LED display structure of any of the embodiments of the present application.
[0029] In the technical scheme of the present application, the full-color LED display structure comprises: a first color light emitting element, the first color light emitting element comprising a first light emitting sub-unit and a quantum dot layer, the quantum dot layer being located on one side of the first light emitting sub-unit; the first light emitting sub-unit comprising a plurality of first light emitting sub-units, the quantum dot layer covering the plurality of first light emitting sub-units; the first light emitting sub-unit exciting the quantum dot layer to emit red light; the first light emitting sub-unit being configured to emit blue light, green light, or ultraviolet light shorter in wavelength than blue light; a first passivation layer, the first passivation layer being located on a side of the first light emitting sub-unit away from the quantum dot layer, the first passivation layer covering the first light emitting sub-unit and part of the quantum dot layer; the quantum dot layer covering part of the first passivation layer not covered by the first light emitting sub-unit; a filter layer, the filter layer being located on a side of the quantum dot layer away from the first light emitting sub-unit, the filter layer covering the quantum dot layer; a second color light emitting unit, the second color light emitting unit being located on a side of the filter layer away from the first light emitting sub-unit; the second color light emitting unit comprising a plurality of second light emitting sub-units, each second light emitting sub-unit corresponding to a first light emitting sub-unit; a third color light emitting unit, the third color light emitting unit being located on a side of the second color light emitting unit away from the filter layer; the third color light emitting unit comprising a plurality of third light emitting sub-units, each third light emitting sub-unit corresponding to a second light emitting sub-unit; wherein the filter layer is configured to transmit red light and reflect blue light, green light, or ultraviolet light shorter in wavelength than blue light. The light emitted by the first color light emitting element, the light emitted by the second color light emitting unit, and the light emitted by the third color light emitting unit can realize full-color display; the quantum dot layer is excited by blue light, green light, or ultraviolet light to emit red light, thereby improving the light emitting efficiency of red light; the filter layer can reflect blue light, green light, or ultraviolet light, which will cause the quantum dot layer to be excited again to emit red light, thereby further improving the light emitting efficiency of red light.
[0030] It should be understood that the content described in this part is not intended to identify key or important features of the embodiments of the present application, nor is it used to limit the scope of the present application. Other features of the present application will become apparent from the following description. BRIEF DESCRIPTION OF DRAWINGS
[0031] In order to make the technical scheme in the embodiments of the present application clearer, the following will briefly introduce the drawings needed in the embodiment description. Obviously, the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained without creative labor on the basis of these drawings.
[0032] Figure 1 is a schematic view of a full-color LED display structure provided by the embodiments of the present application.
[0033] Figures 2-15 is a schematic view of an intermediate structure of a full-color LED display structure provided by the embodiments of the present application. DETAILED DESCRIPTION
[0034] In order to make the technical scheme in the embodiments of the present application clearer, the following will briefly introduce the drawings needed in the embodiment description. Obviously, the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained without creative labor on the basis of these drawings.
[0035] It should be noted that the terms "first", "second", and the like in the description of the present application and the claims and the above drawings are used to distinguish similar objects, and do not have to be used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion, for example, a process, method, system, product or device including a series of steps or units does not have to be limited to those steps or units clearly listed, but can include other steps or units not clearly listed or inherent to these processes, methods, products or devices.
[0036] The embodiments of the present application provide a full-color LED display structure, Figure 1 is a schematic view of a full-color LED display structure provided by the embodiments of the present application. Figure 1 The full-color LED display structure comprises:
[0037] The first color light emitting element 100 includes the first light emitting unit 10 and the quantum dot layer 20 located on one side of the first light emitting unit 10; the first light emitting unit 10 includes a plurality of first sub light emitting units 11, and the quantum dot layer 20 covers the plurality of first sub light emitting units 11; the first light emitting unit 10 excites the quantum dot layer 20 to emit red light; the first light emitting unit 10 is used to emit blue light, green light or ultraviolet light shorter than the wavelength of blue light;
[0038] The first passivation layer 30 is located on the side of the first light emitting unit 10 away from the quantum dot layer 20, and the first passivation layer 30 covers the first sub light emitting unit 11 and part of the quantum dot layer 20; the quantum dot layer 20 covers part of the first passivation layer 30 not covered by the first sub light emitting unit 11;
[0039] The light filtering layer 40 is located on the side of the quantum dot layer 20 away from the first light emitting unit 10, and the light filtering layer 40 covers the quantum dot layer 20;
[0040] The second color light emitting unit 200 is located on the side of the light filtering layer 40 away from the first light emitting unit 11; the second color light emitting unit 200 includes a plurality of second sub light emitting units 12, and each second sub light emitting unit 12 corresponds to a first sub light emitting unit 11;
[0041] The third color light emitting unit 300 is located on the side of the second color light emitting unit 200 away from the light filtering layer 40; the third color light emitting unit 300 includes a plurality of third sub light emitting units 13, and each third sub light emitting unit 13 corresponds to a second sub light emitting unit 12;
[0042] The light filtering layer 40 is used to transmit red light and reflect blue light, green light or ultraviolet light shorter than the wavelength of blue light.
[0043] Specifically, the full-color LED display structure is a Micro-LED structure; the side walls of the first sub light emitting unit 11, the second sub light emitting unit 12 and the third sub light emitting unit 13 can be inclined side walls for improving light emitting efficiency. The first color light emitting element 100, the second color light emitting unit 200 and the third color light emitting unit 300 are vertically stacked in sequence, which can reduce the lateral size of the device, and the light emitted by the first color light emitting element 100, the light emitted by the second color light emitting unit 200 and the light emitted by the third color light emitting unit 300 can realize full-color display. The material of the first passivation layer 30 can be silicon dioxide or transparent resin, etc., and the first passivation layer 30 plays an insulating protection role; the light filtering layer 40 can be a DBR layer.
[0044] The first light emitting unit 10 can emit light of the same color as the second color light emitting unit 200 or the third color light emitting unit 300. For example, the first light emitting unit 10 can emit blue light, green light or ultraviolet light. Since the light emitting efficiency of red light is low, the light emitting unit emitting blue light, green light or ultraviolet light can be combined with the quantum dot layer 20 to emit red light. The light emitting efficiency of the light emitting unit emitting blue light, green light or ultraviolet light is high, and the quantum dot layer 20 is excited by blue light, green light or ultraviolet light to emit red light, which can improve the light emitting efficiency of red light. The light filter layer 40 is used to transmit red light and reflect blue light, green light or ultraviolet light with a wavelength shorter than that of blue light. If blue light, green light or ultraviolet light is incident on the light filter layer 40, the light filter layer 40 can reflect blue light, green light or ultraviolet light, which can further excite the quantum dot layer 20 to emit red light, thereby further improving the light emitting efficiency of red light. Preferably, the first light emitting unit 10 emits blue light or ultraviolet light. Since the wavelength of blue light or ultraviolet light is shorter than that of green light, the energy of blue light or ultraviolet light is higher. When the quantum dot layer 20 converts blue light or ultraviolet light into red light, the light intensity is higher and the efficiency is higher.
[0045] The quantum dot layer 20 covers the plurality of first sub light emitting units 11 and covers the portion of the first passivation layer 30 not covered by the first sub light emitting unit 11. Therefore, the quantum dot layer 20 is an integral surface. The first sub light emitting unit 11 emits light from the side wall in addition to the surface. The quantum dot layer 20 and the light filter layer 40 can simultaneously reflect light from the remaining light emitting surface back to the quantum dot layer 20 to excite the quantum dot layer 20 to emit red light, thereby further improving the light emitting efficiency of red light. The quantum dot layer 20 does not need to be pixelated, which solves the problem of reduced red light conversion efficiency caused by mixing the quantum dot layer with the optical adhesive.
[0046] The full-color LED display structure in the technical scheme of the embodiment of the utility model includes: first color light emitting element, first color light emitting element includes first light emitting unit and quantum dot layer, quantum dot layer is located in one side of first light emitting unit, first light emitting unit includes multiple first sub light emitting unit, quantum dot layer covers multiple first sub light emitting unit, first light emitting unit excites quantum dot layer to send out red light, first light emitting unit is used for sending blue light, green light or ultraviolet light shorter than blue light wavelength, first passivation layer, first passivation layer is located in one side of first light emitting unit far away from quantum dot layer, first passivation layer covers first sub light emitting unit and part quantum dot layer, quantum dot layer covers part first passivation layer not covered by first sub light emitting unit, filter layer, filter layer is located in one side of quantum dot layer far away from first light emitting unit, filter layer covers quantum dot layer, second color light emitting unit, second color light emitting unit is located in one side of filter layer far away from first light emitting unit, second color light emitting unit includes multiple second sub light emitting unit, every second sub light emitting unit corresponds a first sub light emitting unit, third color light emitting unit, third color light emitting unit is located in one side of second color light emitting unit far away from filter layer, third color light emitting unit includes multiple third sub light emitting unit, every third sub light emitting unit corresponds a second sub light emitting unit, wherein, filter layer is used to transmit red light, reflect blue light, green light or ultraviolet light shorter than blue light wavelength, the light of first color light emitting element, the light of second color light emitting unit and the light of third color light emitting unit can realize full-color display, through blue light, green light or ultraviolet light excitation quantum dot layer sends out red light, improves the light emitting efficiency of red light, filter layer can reflect blue light, green light or ultraviolet light, will make quantum dot layer be excited to send out red light again, thereby further improving the light emitting efficiency of red light.
[0047] Optionally, referring to Figure 1 The second color light emitting unit 200 is a green light LED unit, and the third color light emitting unit 300 is a blue light LED unit.
[0048] The first light emitting unit 10 excites the quantum dot layer 20 to emit red light, the green light LED unit emits green light, and the blue light LED unit emits blue light, so that the colorization of the LED structure is realized, and full-color display is realized.
[0049] Optionally, referring to Figure 1 The full-color LED display structure further includes: an isolation layer 50 located between adjacent first sub light emitting units 11, between adjacent second sub light emitting units 12, and between adjacent third sub light emitting units 13.
[0050] The isolation layer 50 is an opaque layer, and the material of the isolation layer 50 can be tungsten or other metals or black resin, etc. The isolation layer 50 surrounds each sub light emitting unit, and the isolation layer 50 is used to avoid optical crosstalk between adjacent sub light emitting units, so that the problem of optical crosstalk can be prevented.
[0051] Optionally, referring to Figure 1 The isolation layer 50 is a metal layer, and the isolation layer 50 can be tungsten or other metal or black resin, for example.
[0052] Optionally, the driving substrate 60 is located on the side of the first passivation layer 30 away from the third color light emitting unit 300; the driving substrate 60 includes a first electrode contact 61 and a second electrode contact 62, and the first electrode contact 61 and the second electrode contact 62 are located on the side of the driving substrate 60 adjacent to the first passivation layer 30.
[0053] The driving substrate 60 can be an IC driving chip and can be a CMOS driving chip; the first color light emitting element 100 and the first passivation layer 30 can be bonded to the driving substrate 60 through a hybrid bonding process; the driving substrate 60 can include a plurality of driving units, and the plurality of driving units independently control the first color light emitting element 100, the second color light emitting unit 200 and the third color light emitting unit 300, and the light emitting units do not affect each other after a voltage is applied, so that full-color display can be realized and the light emitting efficiency can be improved.
[0054] Optionally, referring to Figure 1 The first sub light emitting unit 11 includes a first semiconductor layer 14, a first light emitting layer 16 and a second semiconductor layer 15 which are sequentially stacked; in the first sub light emitting unit 11, the first semiconductor layer 14 is located on the side of the second semiconductor layer 15 adjacent to the driving substrate 60;
[0055] The second sub light emitting unit 12 includes a first semiconductor layer 14, a second light emitting layer 17 and a second semiconductor layer 15 which are sequentially stacked; in the second sub light emitting unit 12, the first semiconductor layer 14 is located on the side of the second semiconductor layer 15 adjacent to the driving substrate 60;
[0056] The third sub light emitting unit 13 includes a first semiconductor layer 14, a third light emitting layer 18 and a second semiconductor layer 15 which are sequentially stacked; in the third sub light emitting unit 13, the first semiconductor layer 14 is located on the side of the second semiconductor layer 15 away from the driving substrate 60.
[0057] The first semiconductor layer 15 and the second semiconductor layer 17 are of different conductive types, one of which is an N-type doped semiconductor layer and the other of which is a P-type doped semiconductor layer. The materials of the first semiconductor layer 14 and the second semiconductor layer 15 both include GaN, and the first light emitting layer 16, the second light emitting layer 17 and the third light emitting layer 18 are all quantum well layers.
[0058] Optionally, the full-color LED display structure further comprises: a first conductive layer 70; the first conductive layer 70 is located on the side of the second semiconductor layer 15 away from the first semiconductor layer 14, and the first conductive layer 70 covers at least part of the second semiconductor layer 15; a second conductive layer 80, the second conductive layer 80 is located on the side of the first semiconductor layer 14 away from the second semiconductor layer 15, and the second conductive layer 80 covers at least part of the first semiconductor layer 14.
[0059] The material of the first conductive layer can be an indium tin oxide (ITO) film, which has good conductivity and visible light transmittance. The first conductive layer 70 is electrically connected to the first electrode contact 61 of the driving substrate 60, so that the driving unit in the driving substrate 60 provides an electrical signal for each light-emitting unit through the first conductive layer; the second conductive layer 80 is electrically connected to the second electrode contact 62 of the driving substrate 60, so that the driving unit in the driving substrate 60 provides an electrical signal for each light-emitting unit through the second conductive layer 80.
[0060] Optionally, the full-color LED display structure further comprises: a first conductive via 71 and a second conductive via 81; the first conductive layer 70 is electrically connected to the first electrode contact 61 through the first conductive via 71; the second conductive layer 80 is electrically connected to the second electrode contact 62 through the second conductive via 81.
[0061] Optionally, a second passivation layer 90 is located between the filter layer 40 and the second light-emitting sub-unit 12, between adjacent second light-emitting sub-units 12, between the second light-emitting sub-unit 12 and the third light-emitting sub-unit 13, and between adjacent third light-emitting sub-units 13. The material of the second passivation layer 90 can be silicon dioxide or transparent resin, which can play the role of insulation protection.
[0062] The first conductive via 71 and the second conductive via 81 each include a metal bonding pad, which facilitates reliable bonding of the full-color LED display structure; the first conductive via 71 in the first light-emitting sub-unit 11 needs to be filled with a metal material after etching a via in part of the first passivation layer 30; the first conductive via 71 in the second light-emitting sub-unit 12 and the third light-emitting sub-unit 13 needs to be filled with a metal material after etching a via in the first passivation layer 30, the quantum dot layer 20, the filter layer 40, and part of the second passivation layer 90; the first conductive via 71 of each light-emitting sub-unit corresponds to one first electrode contact 61, and the first conductive via 71 of each light-emitting sub-unit is electrically connected to the first electrode contact 61.
[0063] The second conductive via hole 81 of the first sub-light emitting unit 11 needs to be formed by filling a metal material after photoetching and etching a via hole in part of the first passivation layer 30; the second conductive via hole 81 in the second sub-light emitting unit 12 needs to be formed by filling a metal material after photoetching and etching a via hole in the first passivation layer 30, the quantum dot layer 20, the light filtering layer 40 and part of the second passivation layer 90; the second conductive via hole 81 in the third sub-light emitting unit 13 needs to be formed by filling a metal material after photoetching and etching a via hole in part of the second passivation layer 90; the second conductive layer 80 in the same layer is electrically connected, and the vertical projection of the second conductive via hole 81 of each sub-light emitting unit on the driving substrate 60 is coincident, and is connected to the second electrode contact 62 in the driving substrate 60, respectively.
[0064] The embodiment of the utility model provides a preparation method of full-color LED display structure on the basis of above-mentioned embodiment, for preparing full-color LED display structure described in any embodiment of the utility model, Figures 2-14 It is the intermediate structure schematic diagram of full-color LED display structure provided by the embodiment of the utility model, reference Figures 1-14 , preparation method includes:
[0065] S1: reference Figure 2 , provide first substrate 01 and first buffer layer 02, form third color light emitting material layer on first buffer layer 02, third color light emitting material layer includes first semiconductor layer 14, third light emitting layer 18 and second semiconductor layer 15 that are sequentially stacked, then form the first conductive layer 70 of third color light emitting unit, the first conductive layer 70 of third color light emitting unit is current expansion layer, can be indium tin oxide (ITO) plating film, the material of substrate includes silicon, sapphire, silicon carbide etc.
[0066] S2: reference Figure 3 , etch first semiconductor layer 14, third light emitting layer 18 and second semiconductor layer 15 of third color light emitting material layer, then plating passivation sub-layer 31 plays the role of isolation, protection, the material of passivation sub-layer 31 is SiO2 or transparent resin etc., introduce non-transparent isolation layer 50 through TSV process, then plating first metal contact point A1 on the first conductive layer 70 of third color light emitting unit through the mode of photoetching, etching, electroplating, after CMP flat, finally plating bonding medium SiO2 or transparent resin etc., form passivation sub-layer 32.
[0067] S3: reference Figure 4, provide the second substrate 03 and the second buffer layer 04, form the second color light emitting material layer on the second buffer layer 04, the second color light emitting material layer includes the first semiconductor layer 14, the second light emitting layer 17 and the second semiconductor layer 15 which are sequentially stacked, then form the first conductive layer 70 of the second color light emitting unit, the first conductive layer 70 of the second color light emitting unit is a current expansion layer, can be indium tin oxide (ITO) film, the material of the substrate includes silicon, sapphire, silicon carbide and the like; finally, the bonding medium SiO2 or transparent resin and the like are plated to form the passivation sub-three layers 33.
[0068] S4: refer to Figure 5 , the passivation sub-two layers 32 and the passivation sub-three layers 33 are bonded in a fusion bonding manner.
[0069] S5: refer to Figure 6 , the second substrate 03 and the second buffer layer 04 are removed, usually removed by CMP and WET, the second substrate 03 and the second buffer layer 04 are removed by whole surface etching. The first semiconductor layer 14, the second light emitting layer 17 and the second semiconductor layer 15 of the second color light emitting material layer are etched, then the passivation sub-four layers 34 are plated to play a role of isolation and protection, the material of the passivation sub-four layers 31 is SiO2 or transparent resin and the like, and the non-transparent isolation layer 50 is introduced through the TSV process.
[0070] S6: refer to Figure 7 , the second conductive layer 80 of the second color light emitting unit is formed by metal wiring in an N-type layer through a lift off manner; then the medium layer SiO2 or transparent resin and the like are plated, and the passivation sub-five layers 35 are formed by CMP; then the second metal contact A2 and the third metal contact A3 are plated on the first conductive layer 70 of the second color light emitting unit through photolithography, etching and electroplating, the second metal contact A2 is electrically connected with the first conductive layer 70 of each sub-unit, and the third metal contact A3 is electrically connected with the second conductive layer 80 of the second color light emitting unit; then CMP is performed; and the second color light emitting unit 200 is formed.
[0071] S7: refer to Figure 8 , provide the third substrate 05 and the third buffer layer 06, form the first light emitting material layer on the second buffer layer 06, the first light emitting material layer includes the first semiconductor layer 14, the first light emitting layer 16 and the second semiconductor layer 15 which are sequentially stacked, then form the first conductive layer 70 of the first light emitting unit, the first conductive layer 70 of the first light emitting unit is a current expansion layer, can be indium tin oxide (ITO) film, and the material of the substrate is silicon, sapphire, silicon carbide and the like.
[0072] S8: refer to Figure 9, spin-coat the quantum dot layer 20 in turn, coat the transparent light reflection layer to form the light filtering layer 40, coat the bonding medium layer SiO2 or transparent resin, etc. to form the passivation sub-layer 6, and then coat the fourth metal contact A4 on the first conductive layer 70 of the first light emitting unit through photolithography, etching and electroplating, and then perform CMP planarization.
[0073] S9: refer to Figure 10 , the fourth metal contact A4 is bonded with the third metal contact A3 and the second metal contact A2 in a hybrid bonding manner, and the passivation sub-layer 6 is bonded with the passivation sub-layer 5; the material of the metal contact can be Cu. The passivation sub-layer 1, the passivation sub-layer 2, the passivation sub-layer 3, the passivation sub-layer 4, the passivation sub-layer 5 and the passivation sub-layer 6 are the second passivation layer 90 in the embodiment of the utility model.
[0074] S10: refer to Figure 11 , the third substrate 05 and the third buffer layer 06 are removed, which is usually removed through CMP and WET, and the third substrate 05 and the third buffer layer 06 are removed through whole surface etching. The first semiconductor layer 14, the first light emitting layer 16 and the second semiconductor layer 15 of the first light emitting material layer are etched, and the quantum dot layer 20 and the light filtering layer 40 are etched at the same time, a through hole is formed in the quantum dot layer 20 and the light filtering layer 40, then the passivation sub-layer 7 37 is coated to play a role of isolation and protection, the material of the passivation sub-layer 7 31 is SiO2 or transparent resin, etc., and the non-transparent isolation layer 50 is introduced through the TSV process.
[0075] S11: refer to Figure 12 , the N-type layer metal wiring is formed through the lift off method to form the second conductive layer 80 of the first light emitting unit; then the medium layer SiO2 or transparent resin, etc. is coated, and CMP planarization is performed to form the passivation sub-layer 8 38; then the fifth metal contact A5 and the sixth metal contact A6 are coated on the first conductive layer 70 of the first light emitting unit through photolithography, etching, TSV and electroplating, the fifth metal contact A5 is electrically connected with the first conductive layer 70 of each sub-unit, and the sixth metal contact A6 is electrically connected with the second conductive layer 80 of the first light emitting unit; then CMP is performed to form the first color light emitting element 100 and the first conductive via.
[0076] S12: refer to Figure 13 , the driving substrate 60 is provided, the driving substrate 60 is CMOS, the metal is coated through the lift off method to lead out the first electrode contact 61 and the second electrode contact 62, the isolation layer and the bonding layer SiO2 or transparent resin, etc. are coated to form the passivation sub-layer 9 39; then the bonding metal layer is coated on the passivation sub-layer 9 93 through photolithography, etching and electroplating to form the seventh metal contact A7, and then CMP planarization is performed.
[0077] S15: Refer to Figure 14 , the seventh metal contact point A7 is bonded with the fifth metal contact point A5 and the sixth metal contact point A6 by hybrid bonding, and the passivation sub-ninth layer 39 and the passivation sub-eighth layer 38 are bonded; the material of the metal contact point can be Cu. The passivation sub-ninth layer 39, the passivation sub-eighth layer 38 and the passivation sub-seventh layer 37 are the first passivation layer 30 in the embodiment of the utility model.
[0078] S16: Refer to Figure 15 , the first substrate 01 and the first buffer layer 02 are removed; the first substrate 01 and the first buffer layer 02 and part of the first semiconductor layer 14 of the third color light emitting material layer are removed by the way of CMP and WET, and the third color light emitting unit 300 is formed.
[0079] S17: Refer to Figure 1 , the second conductive layer 80 of the third color light emitting unit is led out by the way of photoetching, lift off and TSV in the SiO2 layer, and the metal is rerouted, and the final second conductive via hole 81 is formed.
[0080] The preparation method of the full-color LED display structure provided by the technical scheme of the embodiment of the utility model has the same beneficial effects as the full-color LED display structure described in any embodiment of the utility model.
[0081] It should be understood that the various forms of flow shown above can be used to reorder, add or delete steps. For example, the steps described in the utility model can be executed in parallel, sequentially or in different orders, as long as the desired results of the technical scheme of the utility model can be achieved, and the present document does not limit this.
Claims
1. A full-color LED display structure, characterized in that, Comprise: A first color light emitting element comprising a first light emitting unit and a quantum dot layer, the quantum dot layer being located on one side of the first light emitting unit; The first light emitting unit comprises a plurality of first sub-light emitting units, and the quantum dot layer covers a plurality of first sub-light emitting units; the first light emitting unit excites the quantum dot layer to emit red light; the first light emitting unit is used to emit blue light, green light or ultraviolet light shorter than blue light wavelength; A first passivation layer is located on the side of the first light emitting unit away from the quantum dot layer, and the first passivation layer covers the first sub-light emitting unit and part of the quantum dot layer; the quantum dot layer covers part of the first passivation layer which is not covered by the first sub-light emitting unit; A light filtering layer is located on the side of the quantum dot layer away from the first light emitting unit, and the light filtering layer covers the quantum dot layer; A second color light emitting unit is located on the side of the light filtering layer away from the first light emitting unit; the second color light emitting unit comprises a plurality of second sub-light emitting units, each second sub-light emitting unit corresponding to one first sub-light emitting unit; A third color light emitting unit is located on the side of the second color light emitting unit away from the light filtering layer; the third color light emitting unit comprises a plurality of third sub-light emitting units, each third sub-light emitting unit corresponding to one second sub-light emitting unit; Wherein, the light filtering layer is used to transmit red light and reflect blue light, green light or ultraviolet light shorter than blue light wavelength. 2.The full-color LED display structure according to claim 1, characterized in that, The second color light emitting unit is a green light LED unit, and the third color light emitting unit is a blue light LED unit. 3.The full-color LED display structure according to claim 1, characterized in that, Further comprise: An isolation layer is located between adjacent first sub-light emitting units, between adjacent second sub-light emitting units, and between adjacent third sub-light emitting units.
4. The full-color LED display structure according to claim 3, characterized in that, The isolation layer is a metal layer or a black resin layer.
5. The full-color LED display structure according to claim 1, wherein, Further comprise: A driving substrate is located on the side of the first passivation layer away from the third color light emitting unit; The driving substrate comprises a first electrode contact and a second electrode contact, and the first electrode contact and the second electrode contact are located on the side of the driving substrate adjacent to the first passivation layer. 6.The full-color LED display structure according to claim 5, characterized in that, The first sub-light emitting unit comprises a first semiconductor layer, a first light emitting layer and a second semiconductor layer stacked in turn; in the first sub-light emitting unit, the first semiconductor layer is located on the side of the second semiconductor layer adjacent to the driving substrate; The second sub-light emitting unit comprises a first semiconductor layer, a second light emitting layer and a second semiconductor layer stacked in turn; in the second sub-light emitting unit, the first semiconductor layer is located on the side of the second semiconductor layer adjacent to the driving substrate; The third sub-light emitting unit comprises a first semiconductor layer, a third light emitting layer and a second semiconductor layer stacked in turn; in the third sub-light emitting unit, the first semiconductor layer is located on the side of the second semiconductor layer away from the driving substrate.
7. The full-color LED display structure according to claim 6, characterized in that, Further comprise: A first conductive layer; The first conductive layer is located on the side of the second semiconductor layer away from the first semiconductor layer, and the first conductive layer covers at least part of the second semiconductor layer; A second conductive layer is located on the side of the first semiconductor layer away from the second semiconductor layer, and covers at least part of the first semiconductor layer. 8.The full-color LED display structure according to claim 7, characterized in that, Further comprising: A first conductive via and a second conductive via; the first conductive layer is electrically connected with the first electrode contact through the first conductive via; The second conductive layer is electrically connected with the second electrode contact through the second conductive via. 9.The full-color LED display structure according to claim 8, characterized in that, Further comprising: A second passivation layer is located between the filter layer and the second sub-light emitting unit, between adjacent second sub-light emitting units, between the second sub-light emitting unit and the third sub-light emitting unit, and between adjacent third sub-light emitting units.
10. A display panel, characterized by, The full-color LED display structure of any one of claims 1-9 is included.