Standard sheet
By designing a particle unit array on the surface of the mask, the problems of small detection range and low accuracy of traditional standard films are solved, achieving high-precision and repeatable MBI detection, and supporting multiple cleaning and long-term use.
Patent Information
- Application Number
- CN202520489728.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-19
- Publication Date
- 2026-01-16
- Estimated Expiration
- 2035-03-19
AI Technical Summary
Traditional MBI (Mechanical Inspection and Testing) machines have a small detection range and low detection accuracy, and the standard plates cannot be cleaned after contamination, resulting in poor detection repeatability, which affects detection accuracy and false detection rate.
Design a standard sheet using a mask with a particle unit array on its surface. The particle unit includes multiple particle arrays, which are arranged sequentially along a certain direction with gradually increasing particle size to form an integrated structure that supports multiple cleaning cycles.
It achieves clearly defined particle size and location, covers a wide range of technical nodes, improves detection repeatability and accuracy, reduces false detection rate, and supports long-term continuous use.
Smart Images
Figure CN223808625U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to mask substrate entry detection technical field, especially a standard piece. BACKGROUND
[0002] The manufacturing method of the conventional mask blank inspection (MBI) machine standard piece is to directly spray special materials such as silicon dioxide microspheres or polystyrene microspheres onto the surface of the mask substrate to obtain the standard piece. The size of the particles formed by this method is limited and cannot cover a wider range of technology nodes. Moreover, the particles are randomly distributed, and the number and position of the particles need to be detected in advance before use. The detection process is prone to errors, and the standard of the obtained standard piece is not accurate, which will affect the detection range, detection accuracy and other parameters of the subsequent MBI process. In addition, the particles formed by this method are attached to the surface and cannot be directly cleaned. After multiple uses, the dirt produced will cause the number of particles to change, and the continued use of this standard piece for MBI will not meet the repeatability, will affect the detection accuracy and will have a certain misjudgment rate, so it cannot continue to be used as a standard and is not convenient for long-term continuous use. SUMMARY
[0003] Therefore, the purpose of the utility model is to provide a standard piece to solve the problems of small detection range, low detection accuracy and poor detection repeatability after pollution of the conventional standard piece.
[0004] To solve the above technical problems, the utility model provides a standard piece, which comprises: a mask plate; a particle unit array is arranged on the surface of the mask plate; the particle unit array comprises at least two particle units; each particle unit comprises at least two particle arrays, and the particle arrays are arranged in sequence along a first direction; each particle array comprises at least two particles; all the particles in each particle array have the same particle size, and for each particle array along the first direction in the same particle unit, the particle size of the particles increases in sequence.
[0005] Optionally, the particle unit array is a rectangular particle unit array, and the particle units are arranged along the first direction and a second direction; the second direction is perpendicular to the first direction.
[0006] Optionally, the number of particle units along the first direction is 20-80, and the values at both ends are included.
[0007] And / or, the number of particle units along the second direction is 200-800, and the values at both ends are included.
[0008] And / or, the interval between the adjacent particle units along the first direction is 1-5 times the maximum value of the particle size of all the particle arrays, and the values at both ends are included.
[0009] And / or, the interval between the adjacent particle units along the second direction is 1-5 times the maximum value of the particle size of all the particle arrays, and the values at both ends are included.
[0010] Optionally, the number of the particle arrays is 15-20, and the values at both ends are included.
[0011] And / or, the particle size of the particles is 25-2000 nm, and the values at both ends are included.
[0012] And / or, the particles are cylindrical columns protruding upward or concave downward along the direction perpendicular to the surface of the standard sheet; or the particles are rectangular columns protruding upward or concave downward along the direction perpendicular to the surface of the standard sheet.
[0013] Optionally, the interval between the adjacent particles in each of the particle arrays is 1-5 times the particle size, and the values at both ends are included.
[0014] And / or, the interval between the adjacent particle arrays is 1-5 times the side length of the particle array, and the values at both ends are included.
[0015] Optionally, the particle array is a square particle array, and the particles are arranged along the first direction and the second direction; the second direction is perpendicular to the first direction.
[0016] Optionally, the number of the particles along the first direction in each of the square particle arrays is 10-50, and the values at both ends are included.
[0017] Optionally, the mask plate is a chromium mask plate or a molybdenum silicide mask plate.
[0018] Optionally, each of the particle units includes at least two particle array groups, and the particle array groups are arranged in sequence along the first direction; each of the particle array groups includes at least two particle arrays; the difference in the particle size of the particles between the adjacent particle arrays in the same particle array group is the same, and the difference in the particle size of the particles between the adjacent particle arrays between different particle array groups along the first direction increases in sequence.
[0019] Optionally, each of the particle units includes a first particle array group, a second particle array group, a third particle array group, and a fourth particle array group arranged in sequence along the first direction.
[0020] The particle size of the particles of the particle array in the first particle array group is less than 100 nm; the difference of the particle size of the particles of adjacent particle arrays in the first particle array group is 5 nm-15 nm, and the values at both ends are included;
[0021] The particle size of the particles of the particle array in the second particle array group is 100 nm-200 nm, and the values at both ends are included; the difference of the particle size of the particles of adjacent particle arrays in the second particle array group is 15 nm-30 nm, and the values at both ends are included;
[0022] The particle size of the particles of the particle array in the third particle array group is 200 nm-1000 nm, and the value at the right end is included; the difference of the particle size of the particles of adjacent particle arrays in the third particle array group is 100 nm-300 nm, and the values at both ends are included;
[0023] The particle size of the particles of the particle array in the fourth particle array group is 1000 nm-2000 nm, and the value at the right end is included; the difference of the particle size of the particles of adjacent particle arrays in the fourth particle array group is 300 nm-600 nm, and the values at both ends are included.
[0024] It can be seen that the standard piece has the following beneficial effects compared with the traditional standard piece.
[0025] 1. The mask plate with a patterned surface is directly used as a standard piece, the mask plate has clear particle size, quantity and arrangement position, and clear standards can be directly obtained, and it is not necessary to determine the standards through machine detection, so that the standards of the standard piece are not affected by the detection capacity error of the machine;
[0026] 2. A plurality of particle units arranged in an array are adopted, a plurality of particle arrays arranged in an array are adopted in each particle unit, and a plurality of particles arranged in an array are adopted in each particle array; and the particle size in each particle array increases in turn along the arrangement direction;
[0027] (1) A plurality of different particle sizes are adopted, and the particle size changes gradually, so that a wider technical node can be covered, from 350 nm to 7 nm technical node;
[0028] (2) The array arrangement improves the repeatability, prevents local failure in the manufacturing process from causing size shortage, and prevents local detection error in the use of the standard piece from affecting the overall result;
[0029] 3. This mask has a one-piece structure and can support multiple cleanings. If particles or other dirt fall off during use, it can be removed by cleaning without affecting the original particle arrangement, maintaining repeatability and detection accuracy, and reducing the false detection rate. Therefore, even after multiple cleanings, it can still be used as a standard sheet and can be used continuously for a long time. Attached Figure Description
[0030] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.
[0031] Figure 1 A schematic diagram of the structure of a standard sheet provided in an embodiment of this utility model;
[0032] Figure 2 This is a schematic diagram of another standard sheet provided in an embodiment of the present utility model.
[0033] The annotations in the attached figures are explained as follows:
[0034] 1-Particle unit array 1; 2-Particle unit; 31-25nm particle size array; 32-35nm particle size array; 33-45nm particle size array; 34-2000nm particle size array; 4-Particle. Detailed Implementation
[0035] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.
[0036] After the mask substrate arrives at the factory or before production exposure, the MBI machine is used to pre-inspect the mask substrate to screen out mask substrates whose surface particle number does not meet the manufacturing requirements, thereby avoiding the risk of product scrap.
[0037] MBI machine standard sheet: used for calibration before machine acceptance and daily monitoring after acceptance. The traditional standard sheet is prepared by spraying special materials such as silica microspheres or polystyrene microspheres directly onto the surface of the mask substrate. This method is sprayed as a whole, without fixing the position of each small particle, so the particles are randomly distributed, and the size of the formed particles is limited.
[0038] Because different technology nodes have different particle requirements, and the size of the particles formed by the traditional standard sheet is limited, it cannot cover a wider range of technology nodes. Moreover, the particles are randomly distributed, and the actual number and position of the particles on the standard sheet need to be determined by machine detection, and cannot be determined before the standard sheet is prepared. If there is a certain error in the machine detection capability, it will lead to errors in the detection number and range of the standard sheet and the actual situation, and further affect the detection range, detection accuracy and other parameters of the subsequent MBI process.
[0039] In addition, the standard sheet is frequently used, which has the risk of breaking and being contaminated. Because the particles on the surface are attached to the surface, they can be washed off by cleaning, so they cannot be directly cleaned. If dirty is generated after multiple uses, the number of particles will change, and the use of this standard sheet for MBI will not meet the repeatability, which will affect the detection accuracy and there will be a certain false detection rate, so it cannot continue to be used as a standard, and it is not convenient for long-term continuous use.
[0040] Please refer to Figure 1 , Figure 1 The structure of the standard sheet provided in the embodiment of the present application can include: a mask plate; a particle unit array 1 is arranged on the surface of the mask plate; the particle unit array 1 includes at least two particle units; each particle unit includes at least two particle arrays, and the particle arrays are arranged in sequence along a first direction; each particle array includes at least two particles; all particles in each particle array have the same particle size, and for each particle array along the first direction in the same particle unit, the particle size of the particles increases in sequence.
[0041] The standard sheet provided in the embodiment can be applied to an MBI machine, and is used for testing the performance of the MBI machine such as the grabbing rate, the false detection rate and the repeatability.
[0042] The embodiment is not limited to the specific type of mask plate, for example, the mask plate is a chromium mask plate or a molybdenum silicide mask plate. It should be noted that chromium and molybdenum silicide are both common materials in the prior art, and the embodiment is not limited to the internal components of the mask plate, but directly uses the mask plate made of existing materials. In addition, it should be noted that the particle unit array 1 on the surface of the mask plate in the embodiment is etched along the thickness direction of the surface of the mask substrate, and the surface obtained after etching has a patterned mask plate including a main body portion and a particle unit array 1 arranged on the surface of the main body portion. The particle unit array 1 and the main body portion are an integral structure, so when the mask plate in the embodiment is a chromium mask plate or a molybdenum silicide mask plate, the corresponding surface particles are chromium particles or molybdenum silicide particles.
[0043] The embodiment is not limited to the specific arrangement of the particle units, for example, the particle unit array 1 can be a rectangular particle unit array, and the particle units are arranged along the first direction and the second direction; the second direction is perpendicular to the first direction; in addition, the particle units can also be arranged in other shapes of array. It should be noted that the mask plate is usually rectangular, and in the embodiment, the first direction and the second direction correspond to the extension directions of the two adjacent side lengths of the mask plate, and the particle units are arranged in a rectangular array, which is more convenient and has a higher utilization rate of the mask plate; and has higher repeatability in both the first direction and the second direction.
[0044] The embodiment is not limited to the specific number of particle units along the first direction, for example, the number of particle units along the first direction can be 20-80, and the values at both ends are included. The embodiment is not limited to the specific number of particle units along the second direction, for example, the number of particle units along the second direction is 200-800, and the values at both ends are included. It should be noted that the number of particle units will affect the repeatability, and will also be limited by the size of the mask plate.
[0045] The embodiment is not limited to the interval of the adjacent particle units along the first direction, for example, the interval of the adjacent particle units along the first direction can be 1-5 times of the maximum value of the particle size of all particle arrays, and the values at both ends are included; further, the interval of the adjacent particle units along the first direction can be 2-10 μm, and the values at both ends are included. The embodiment is not limited to the interval of the adjacent particle units along the second direction, for example, the interval of the adjacent particle units along the second direction can be 1-5 times of the maximum value of the particle size of all particle arrays, and the values at both ends are included; further, the interval of the adjacent particle units along the second direction can be 2-10 μm, and the values at both ends are included. It should be noted that the interval of the adjacent particle units in the embodiment adopts the above parameter range, which is easier to prepare, and the interval of the adjacent particle units is also limited by the size of the mask plate. In addition, it should be noted that the interval of the adjacent particle units along the first direction and the interval of the adjacent particle units along the second direction can be the same or different.
[0046] The embodiment is not limited to the specific number of particle arrays in each particle unit, for example, the number of particle arrays can be 15-20, and the values at both ends are included. It should be noted that each particle array in the embodiment corresponds to a particle size, and the more the particle size types, the more the technology nodes can be covered.
[0047] The embodiment is not limited to the specific particle size of the particles in each particle array, for example, the particle size of the particles can be 25-2000 nm, and the values at both ends are included. It should be noted that different technology nodes have different requirements for the particle size of the particles, and the particle size in the embodiment adopts the above parameter range, which can cover 350 nm to 7 nm technology nodes.
[0048] Further, each particle unit in the embodiment can include at least two particle array groups, and the particle array groups are arranged in sequence along the first direction; each particle array group includes at least two particle arrays; the particle size difference of the particles of the adjacent particle arrays in the same particle array group is the same, and the particle size difference of the particles of the adjacent particle arrays between different particle array groups along the first direction increases in sequence. In addition, the particle size difference of the particles of the adjacent particle arrays in the same particle array group can also be different. Further, the particle size difference of the particles of the adjacent particle arrays in the same particle array group along the first direction can also increase in sequence. The above particle size division methods can ensure uniform distribution of particle size. It should be noted that the particle size is divided into multiple particle array groups in the embodiment, and the corresponding particle size difference trend is set according to the particle size change trend, so that the particle size change transition is more refined, thereby ensuring coverage to all nodes.
[0049] The embodiment is not limited to the specific particle size difference of each particle array group. Different particle size differences can be set according to different particle sizes. For example, each particle unit can include a first particle array group, a second particle array group, a third particle array group and a fourth particle array group arranged in the first direction in sequence.
[0050] The particle size of the particles in the particle array in the first particle array group can be less than 100 nm. The particle size difference of the particles in adjacent particle arrays in the first particle array group can be 5 nm-15 nm, and the values at both ends are included.
[0051] The particle size of the particles in the particle array in the second particle array group can be 100 nm-200 nm, and the values at both ends are included. The particle size difference of the particles in adjacent particle arrays in the second particle array group can be 15 nm-30 nm, and the values at both ends are included.
[0052] The particle size of the particles in the particle array in the third particle array group can be 200 nm-1000 nm, and the value at the right end is included. The particle size difference of the particles in adjacent particle arrays in the third particle array group can be 100 nm-300 nm, and the values at both ends are included.
[0053] The particle size of the particles in the particle array in the fourth particle array group can be 1000 nm-2000 nm, and the value at the right end is included. The particle size difference of the particles in adjacent particle arrays in the fourth particle array group can be 300 nm-600 nm, and the values at both ends are included.
[0054] The embodiment is not limited to the specific shape of the particles. For example, the particles can be cylindrical columns protruding upward or recessing downward in the direction perpendicular to the surface of the standard sheet. The cross section of such particles is circular, and the particle size refers to the diameter of the cross section. In addition, the particles can also be rectangular columns protruding upward or recessing downward in the direction perpendicular to the surface of the standard sheet. The cross section of such particles is rectangular (including rectangular or square), and the particle size refers to the side length of the cross section.
[0055] The specific distance between adjacent particles in each particle array in the embodiment can be 1-5 times the particle size, and the values at both ends are included. The specific distance between adjacent particle arrays in the embodiment can be 1-5 times the side length of the particle array, and the values at both ends are included. It should be noted that the distance between adjacent particles and the distance between adjacent particle arrays in the embodiment adopt the above parameter range, which is easier to prepare. If the interval is too large, the particles are prone to collapse during preparation.
[0056] The embodiment is not limited to the specific arrangement of the particles, for example, the particle array can be a square particle array, the particles are arranged along a first direction and a second direction, the second direction is perpendicular to the first direction, and in addition, the particle unit can also adopt other array arrangement modes.
[0057] The embodiment is not limited to the specific number of particles along the first direction in each square particle array, for example, the number of particles along the first direction in each square particle array can be 10-50, and the values at both ends are included. In the embodiment, the number of particles along the second direction in each square particle array is the same as the number of particles along the first direction. It should be noted that the number of particles will affect the repeatability, and at the same time, it will also be limited by the size of the mask plate.
[0058] Based on the above embodiment, the standard sheet provided by the utility model has the following beneficial effects compared with the traditional standard sheet:
[0059] 1. The mask plate with a patterned surface is directly used as a standard sheet, the mask plate has a clear size, number and arrangement position of particles, and a clear standard can be directly obtained, without the need for detection by a machine to determine, so that errors in the standard sheet standard caused by machine detection capacity errors are avoided;
[0060] 2. A plurality of particle units arranged in an array are adopted, a plurality of particle arrays arranged in an array are adopted in each particle unit, a plurality of particles arranged in an array are adopted in each particle array, and the particle size in each particle array increases in turn along the arrangement direction;
[0061] (1) A plurality of different particle sizes are adopted, and the transition of the particle size is fine, so that a wider technical node can be covered, from 350nm to 7nm technical node;
[0062] (2) The array arrangement improves the repeatability, prevents local failure in the manufacturing process from causing size defects (because in the process of preparing the mask substrate into a mask plate, a random defect may occur, such as a particle not being made, but because the arrangement design is repeated a large number of times, the same particles in other areas can be used instead, without affecting the overall effect of the standard sheet.), and prevents local detection errors in the use of the standard sheet from affecting the overall result (because in the machine detection process, a particle may fail to be captured, but several times the same particles are successfully captured, without affecting the final detection result.).
[0063] 3. This mask has a one-piece structure and can support multiple cleanings. If particles or other dirt fall off during use, it can be removed by cleaning without affecting the original particle arrangement, maintaining repeatability and detection accuracy, and reducing the false detection rate. Therefore, even after multiple cleanings, it can still be used as a standard sheet and can be used continuously for a long time.
[0064] To make this utility model easier to understand, please refer to... Figure 2 , Figure 2 This is a schematic diagram of the structure of a standard sheet provided in an embodiment of the present invention. The standard sheet uses a mask with a side length of 152.4 nm. The pattern on the mask is a particle unit array 1 composed of particle units 2. The particle unit array 1 has a total of 500 columns, with each column consisting of 50 particle units 2 arranged vertically, that is, including 500×50 particle units 2. The horizontally adjacent particle units 2 are spaced 6 μm apart, and the vertically adjacent particle units 2 are also spaced 6 μm apart.
[0065] Each particle unit 2 consists of 18 vertical square arrays from top to bottom;
[0066] The particle sizes of the 18 square arrays, from smallest to largest, are 25nm, 35nm, 45nm, 55nm, 65nm, 75nm, 85nm, 95nm, 110nm, 130nm, 150nm, 170nm, 200nm, 500nm, 800nm, 1100nm, 1500nm, and 2000nm. Each square array consists of particles 4 of the same particle size arranged in a specific pattern. Taking the first square array (also the topmost and smallest 25nm particle size square array 31) as an example, each row of this 25nm particle size square array 31 consists of 20 particles 4 with a particle size of 25nm, for a total of 20 rows. The spacing between two adjacent particles 4 is three times the particle size, which is 25 × 3 = 75nm. Therefore, the side length of the 25nm particle size square array 31 is (25 + 25 × 3) × 19 + 25 = 25 × 77 = 1925nm. After finishing this 25nm particle size array 31, the next array is started at a interval of 3 times the side length of the 25nm particle size array 31 (for example, the interval between the 25nm particle size array 31 and the 35nm particle size array 32 is 1925×3=5775nm, the interval between the 35nm particle size array 32 and the 45nm particle size array 33 is (35×77)×3=8085nm, and so on), until the 18th array (which is also the bottom and largest 2000nm particle size array 34), whose side length is 2000×77=154000nm.
[0067] To facilitate understanding of this invention, this embodiment also provides a method for preparing a standard sheet provided in this embodiment. The method involves preparing a mask to prepare the standard sheet, and includes:
[0068] Using high-end mask with electron beam direct writing machine, first, the photoresist coated on the surface of the mask substrate is exposed, then the excess photoresist is removed by developing, leaving the photoresist to form the required particle pattern, then dry etching is carried out, this step uses photoresist as shielding, etching pattern on the next film layer (i.e. mask substrate), then removing the surface photoresist and cleaning the mask substrate, at this time, the required particles are left on the surface of the mask substrate, and the mask with patterned surface is obtained, thereby completing the preparation of the standard piece.
[0069] The traditional standard piece preparation method is not disclosed, there is no manufacturer in China that can make standard pieces, and only foreign manufacturers can be purchased, the purchase price is expensive and the channel is limited, and the prepared standard pieces also have the problems of small detection range, low detection precision and poor detection repeatability mentioned above. The preparation method provided in the embodiment uses high-end mask with electron beam direct writing machine, and a series of processes such as exposure, development, dry etching, glue removal and cleaning are carried out to leave particles on the surface of the mask substrate to complete the preparation of the standard piece. This method is different from the traditional standard piece preparation method which is limited by technology, and the preparation method is clear and operable, and the prepared standard piece has large detection range, high detection precision and good detection repeatability.
[0070] The above has carried out the detailed introduction to the standard piece provided by the utility model, for the general technical personnel in the field, according to the thought of the embodiment of the utility model, there will be changes in specific implementation mode and application range, and the content of the specification should not be understood as the limitation of the utility model.
Claims
1. A standard tablet characterized in that, Comprising: a mask plate; a surface of the mask plate is provided with a particle cell array; the particle cell array comprises at least two particle cells; each of the particle cells comprises at least two particle arrays arranged in sequence along a first direction; each of the particle arrays comprises at least two particles; all the particles in each of the particle arrays have the same particle size, and for each of the particle arrays along the first direction in the same particle cell, the particle size of the particles increases in sequence.
2. The standard piece according to claim 1, characterized in that The particle cell array is a rectangular particle cell array, and the particle cells are arranged along the first direction and a second direction; the second direction is perpendicular to the first direction.
3. The standard piece according to claim 2, characterized in that The number of the particle cells along the first direction is 20-80, and the values at both ends are included; And / or, the number of the particle cells along the second direction is 200-800, and the values at both ends are included; And / or, the spacing between adjacent particle cells along the first direction is 1-5 times the maximum value of the particle sizes of all the particle arrays, and the values at both ends are included; And / or, the spacing between adjacent particle cells along the second direction is 1-5 times the maximum value of the particle sizes of all the particle arrays, and the values at both ends are included.
4. The standard piece according to claim 1, characterized in that, The number of the particle arrays is 15-20, and the values at both ends are included; And / or, the particle size of the particles is 25-2000 nm, and the values at both ends are included; And / or, the particles are cylindrical columns protruding upward or concave downward along a direction perpendicular to the surface direction of the standard sheet; or the particles are rectangular columns protruding upward or concave downward along a direction perpendicular to the surface direction of the standard sheet.
5. The standard piece according to claim 1, characterized in that, The spacing between adjacent particles in each of the particle arrays is 1-5 times the particle size, and the values at both ends are included; And / or, the spacing between adjacent particle arrays is 1-5 times the side length of the particle array, and the values at both ends are included.
6. The standard piece according to claim 1, characterized in that The particle array is a square particle array, and the particles are arranged along the first direction and a second direction; the second direction is perpendicular to the first direction.
7. The standard piece according to claim 6, characterized in that The number of the particles along the first direction in each of the square particle arrays is 10-50, and the values at both ends are included.
8. The standard piece according to claim 1, characterized in that The mask plate is a chromium mask plate or a molybdenum silicide mask plate.
9. The standard piece according to any one of claims 1 to 8, characterized in that, Each of the particle cells comprises at least two particle array groups arranged in sequence along the first direction; each of the particle array groups comprises at least two particle arrays; the particle size difference of the particles between adjacent particle arrays in the same particle array group is the same, and the particle size difference of the particles between adjacent particle arrays along the first direction between different particle array groups increases in sequence.
10. The standard piece according to claim 9, characterized in that Each of the particle cells comprises a first particle array group, a second particle array group, a third particle array group and a fourth particle array group arranged in sequence along the first direction; The particle size of the particles in the particle arrays in the first particle array group is less than 100 nm; the particle size difference of the particles between adjacent particle arrays in the first particle array group is 5-15 nm, and the values at both ends are included; The particle size of the particles of the particle array in the second particle array group is 100-200nm, and the values at both ends are included; the difference in particle size of the particles of adjacent particle arrays in the second particle array group is 15-30nm, and the values at both ends are included; The particle size of the particles of the particle array in the third particle array group is 200-1000nm, and the value at the right end is included; the difference in particle size of the particles of adjacent particle arrays in the third particle array group is 100-300nm, and the values at both ends are included; The particle size of the particles of the particle array in the fourth particle array group is 1000-2000nm, and the value at the right end is included; the difference in particle size of the particles of adjacent particle arrays in the fourth particle array group is 300-600nm, and the values at both ends are included.