Silicon carbide and silicon hybrid parallel power module
By combining IGBTs and SiC power modules in parallel, a power module combining silicon carbide and silicon in parallel is formed, which solves the problem of poor overall performance in terms of loss and cost of existing modules, and achieves the effect of low cost and low loss.
Patent Information
- Application Number
- CN202520067712.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-10
- Publication Date
- 2026-01-30
- Estimated Expiration
- 2035-01-10
AI Technical Summary
Existing power modules cannot achieve a balance between low loss and low cost.
An architecture combining IGBT power modules and SiC power modules in parallel is adopted. By rationally setting the number of IGBT power modules and SiC power modules, a power module combining silicon carbide and silicon in parallel is formed.
It achieves a good overall performance in terms of loss and cost while providing the expected power output.
Smart Images
Figure CN223859056U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model belongs to the field of semiconductor technology, more particularly, it relates to a silicon carbide and silicon hybrid parallel power module. BACKGROUND
[0002] At present, power modules are widely used in new energy vehicles, new energy power generation, smart grids and traffic electrification and many other fields, and usually appear in the form of power modules containing multiple power modules. In some application fields, such as new energy vehicle controllers, there are relatively higher requirements for low loss and low cost of power modules.
[0003] The existing power module usually adopts the same type of power module, mainly IGBT power module or SiC power module. Among them, the IGBT power module has relatively low cost due to the use of silicon-based IGBT devices, but has high conduction and switching loss. The SiC power module has relatively low conduction and switching loss due to the use of SiC (silicon carbide) MOSFET devices, but has high cost. Based on this, the existing power module cannot balance low loss and low cost, in other words, the existing power module does not perform well in the comprehensive performance of loss and cost. SUMMARY
[0004] The utility model aims at solving the problem that the existing power module does not perform well in the comprehensive performance of loss and cost.
[0005] In order to realize the above-mentioned purpose, the utility model provides a silicon carbide and silicon hybrid parallel power module, which comprises:
[0006] An IGBT power module group, which comprises at least one IGBT power module, and the IGBT power module has a DC+ terminal, a DC- terminal and an AC terminal;
[0007] A SiC power module group, which comprises at least one SiC power module, and the SiC power module has a DC+ terminal, a DC- terminal, a power AC terminal and a parallel AC terminal;
[0008] A DC+ copper bar, which is connected to the DC+ terminal of each IGBT power module and the DC+ terminal of each SiC power module at the same time;
[0009] A DC- copper bar, which is connected to the DC- terminal of each IGBT power module and the DC- terminal of each SiC power module at the same time;
[0010] a power AC copper bar connected to the AC terminal of each IGBT power module and the power AC terminal of each SiC power module simultaneously;
[0011] a parallel AC copper bar connected to the parallel AC terminal of each SiC power module simultaneously.
[0012] Optionally, the power module further comprises:
[0013] a housing, the IGBT power module group and the SiC power module group are arranged inside the housing, the DC+ copper bar and the DC- copper bar are led out of the housing in the same direction, so that the DC+ copper bar and the DC- copper bar have an overlapping portion.
[0014] The carbonized silicon and silicon hybrid parallel power module has the advantages that:
[0015] The carbonized silicon and silicon hybrid parallel power module comprises an IGBT power module group and a SiC power module group, the IGBT power module group comprises at least one IGBT power module, and the SiC power module group comprises at least one SiC power module. The IGBT power module has the advantages of low cost and the disadvantage of high loss relative to the SiC power module, and the SiC power module has the advantages of low loss and the disadvantage of high cost relative to the IGBT power module. The carbonized silicon and silicon hybrid parallel power module adopts the architecture of hybrid parallel connection of the IGBT power module and the SiC power module, thereby having the advantages of the IGBT power module and the SiC power module, and by reasonably setting the number of IGBT power modules in the IGBT power module group and the number of SiC power modules in the SiC power module group, good comprehensive performance of loss and cost can be obtained on the basis of providing expected power output.
[0016] Therefore, the carbonized silicon and silicon hybrid parallel power module can effectively solve the problem that the existing power module does not have satisfactory comprehensive performance of loss and cost.
[0017] Other features and advantages of the present application will be described in detail in the following specific embodiment part. BRIEF DESCRIPTION OF DRAWINGS
[0018] The present application can be better understood by referring to the following description made in conjunction with the accompanying drawings, in which the same or similar reference signs are used to represent the same or similar components in all the drawings.
[0019] Figure 1 Fig. 1 shows a structure schematic diagram of a carbonized silicon and silicon hybrid parallel power module according to an embodiment of the present application;
[0020] Figure 2 A circuit schematic diagram of a silicon carbide and silicon hybrid parallel power module is shown according to an embodiment of the present application.
[0021] Figure 3 A relative position relationship schematic diagram of a DC+ copper bar and a DC- copper bar is shown according to an embodiment of the present application. DETAILED DESCRIPTION
[0022] In order for those skilled in the art to more fully understand the technical solutions of the present application, in the following, exemplary embodiments of the present application will be described more fully and in detail with reference to the accompanying drawings. Obviously, one or more embodiments of the present application described below are only one or more of the specific manners in which the technical solutions of the present application can be implemented, and are not exhaustive. It should be understood that the technical solutions of the present application can be implemented in other manners belonging to the general inventive concept without creative labor, and should not be limited by the exemplary described embodiments. Based on one or more embodiments of the present application, all other embodiments obtained by those skilled in the art without creative labor should belong to the scope of protection of the present application.
[0023] Embodiment: The silicon carbide and silicon hybrid parallel power module of the embodiment of the present application comprises:
[0024] An IGBT power module group, the IGBT power module group comprising at least one IGBT power module, the IGBT power module having a DC+ terminal, a DC- terminal and an AC terminal;
[0025] A SiC power module group, the SiC power module group comprising at least one SiC power module, the SiC power module having a DC+ terminal, a DC- terminal, a power AC terminal and a parallel AC terminal;
[0026] A DC+ copper bar, the DC+ copper bar being connected to the DC+ terminal of each IGBT power module and the DC+ terminal of each SiC power module at the same time;
[0027] A DC- copper bar, the DC- copper bar being connected to the DC- terminal of each IGBT power module and the DC- terminal of each SiC power module at the same time;
[0028] A power AC copper bar, the power AC copper bar being connected to the AC terminal of each IGBT power module and the power AC terminal of each SiC power module at the same time;
[0029] A parallel AC copper bar, the parallel AC copper bar being connected to the parallel AC terminal of each SiC power module at the same time.
[0030] Specifically,Figure 1 A structural schematic diagram of a silicon carbide and silicon mixed parallel power module is shown, Figure 2 A circuit principle diagram of a silicon carbide and silicon mixed parallel power module is shown. Figure 1 and Figure 2 The silicon carbide and silicon mixed parallel power module comprises:
[0031] An IGBT power module group, the IGBT power module group comprises one IGBT power module 100, and the IGBT power module 100 has a DC+ terminal, a DC- terminal and an AC terminal;
[0032] A SiC power module group, the SiC power module group comprises two SiC power modules 200, and the SiC power module 200 has a DC+ terminal, a DC- terminal, a power AC terminal and a parallel AC terminal;
[0033] A DC+ copper bar 300, the DC+ copper bar 300 is connected with the DC+ terminal of the IGBT power module 100 and the DC+ terminals of the two SiC power modules 200 simultaneously;
[0034] A DC- copper bar 400, the DC- copper bar 400 is connected with the DC- terminal of the IGBT power module 100 and the DC- terminals of the two SiC power modules 200 simultaneously;
[0035] A power AC copper bar 500, the power AC copper bar 500 is connected with the AC terminal of the IGBT power module 100 and the power AC terminals of the two SiC power modules 200 simultaneously;
[0036] A parallel AC copper bar 600, the parallel AC copper bar 600 is connected with the parallel AC terminals of the two SiC power modules 200 simultaneously.
[0037] Further, the silicon carbide and silicon mixed parallel power module further comprises:
[0038] A shell, the IGBT power module group and the SiC power module group are arranged in the interior of the shell, and the DC+ copper bar 300 and the DC- copper bar 400 are led out of the shell in the same direction, so that the DC+ copper bar 300 and the DC- copper bar 400 have an overlapping part.
[0039] Specifically, Figure 3 A relative position relationship schematic diagram of the DC+ copper bar and the DC- copper bar is shown. Figure 3In the embodiment of the utility model, DC + copper bar 300 and DC - copper bar 400 adopt laminated structure design, that is, DC + copper bar 300 and DC - copper bar 400 are led out from the same direction of the shell, so that DC + copper bar 300 and DC - copper bar 400 have overlapping parts, so the current opposite flows through the similar conductor, can make total parasitic inductance less than the sum of self -induction of DC + copper bar 300 and DC - copper bar 400, has reduced the parasitic inductance outside module. Figure 3 As shown in the figure, the total parasitic inductance of the module outside loop is L loop3 = L DC+ + L DC- - 2 x M, L DC+ is the self -induction of DC + copper bar 300, L DC - is the self -induction of DC - copper bar 400, and M is the mutual inductance of DC + copper bar 300 and DC - copper bar 400, which is positive.
[0040] The power module of silicon carbide and silicon hybrid parallel of the utility model embodiment adopts the architecture of IGBT power module and SiC power module hybrid parallel. The IGBT device adopted by IGBT power module has the advantages of low conduction loss under large current and low cost, but the switching loss is high. The SiC MOSFET device adopted by SiC power module has the advantages of low conduction loss and low switching loss under small current, but the current capacity is small and the cost is high. The architecture of IGBT power module and SiC power module hybrid parallel combines the advantages of both, can balance the cost and performance of power module, and can adjust the number of parallel SiC power modules according to the different power levels.
[0041] Although one or more embodiments of the utility model have been described above, those skilled in the art should know that the utility model can be implemented in any other form without departing from the spirit and scope of the utility model. Therefore, the above-described embodiments are illustrative rather than limiting, and many modifications and substitutions are obvious to those skilled in the art without departing from the spirit and scope of the utility model as defined in the appended claims.
Claims
1. A power module in which silicon carbide and silicon are mixed in parallel, characterized by, Comprise: an IGBT power module group comprising at least one IGBT power module having a DC+ terminal, a DC- terminal and an AC terminal; a SiC power module group comprising at least one SiC power module having a DC+ terminal, a DC- terminal, a power AC terminal and a parallel AC terminal; a DC+ copper bar connected to the DC+ terminal of each IGBT power module and the DC+ terminal of each SiC power module simultaneously; a DC- copper bar connected to the DC- terminal of each IGBT power module and the DC- terminal of each SiC power module simultaneously; a power AC copper bar connected to the AC terminal of each IGBT power module and the power AC terminal of each SiC power module simultaneously; a parallel AC copper bar connected to the parallel AC terminal of each SiC power module simultaneously.
2. The power module of claim 1, wherein, Further comprise: a housing, the IGBT power module group and the SiC power module group are arranged inside the housing, the DC+ copper bar and the DC- copper bar are led out of the housing in the same direction, so that the DC+ copper bar and the DC- copper bar have an overlapping part.