Ray detector and surface density detection equipment
By setting horizontal and vertical elongated detection areas and photoelectric conversion modules in the X-ray detector, the problems of X-ray waste and pixel inconsistency are solved, realizing the efficient utilization of the X-ray detector and the reliability and safety of surface density detection.
Patent Information
- Application Number
- CN202423321102.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-31
- Publication Date
- 2026-02-13
- Estimated Expiration
- 2034-12-31
AI Technical Summary
In existing X-ray detectors, because the emission window of the X-ray source is elongated, the X-rays from the pyramidal edge cannot be directed perpendicularly to the detector, resulting in wasted rays and an inability to guarantee the consistency of rays within a pixel.
Design a ray detector that employs a scintillator and a photoelectric conversion module. The scintillator has horizontal and vertical elongated detection areas, and the photoelectric conversion module has multiple photosensitive areas to ensure the ray consistency of each pixel. The optical signal is converted into an electrical signal through an amplification circuit and transmitted to the control unit.
This enables the effective utilization of the conical edge rays, improves the resolution of the detector and the accuracy of data processing, and enhances the reliability and safety of the surface density detection equipment.
Smart Images
Figure CN223911056U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the field of detection, in particular to a kind of ray detector and surface density detection equipment. BACKGROUND
[0002] X-ray is neutral high-energy photon stream, has super strong penetration effect and fluorescence, heating, photosensitive, ionization effect to the object radiated.The intensity or phase of X-ray changes after passing through object due to object absorption and scattering, its signal change content is related to the characteristics of object, such as material, structure, thickness, defect, therefore can be applied to non-contact internal topography imaging, composition analysis, widely used in medical imaging detection, industrial production safety detection, astronomical detection, high-energy particle detection, environmental safety detection and other fields.
[0003] At present, due to the emission window of X-ray source used in the industry is generally long strip type, so that the ray emitted by X-ray source is overall in pyramid shape. Among them, the X-ray located in the middle part of pyramid shape can be perpendicular to the detector, the X-ray located in the edge of pyramid shape cannot be perpendicular to the detector. Then in order to ensure the consistency of X-ray to each pixel of the detector, the X-ray located in the edge of pyramid shape is generally shielded, which also causes the waste of X-ray to some extent. UTILITY MODEL CONTENT
[0004] The purpose of the present application is to provide a kind of ray detector and surface density detection equipment, can be guaranteed by setting multiple transverse detection zones and multiple longitudinal detection zones which are all long strip shape, the consistency of ray in pixel, so that the ray of conical edge can be effectively utilized.
[0005] To achieve the above purpose, the technical scheme adopted by the embodiments of the present application is as follows:
[0006] In the first aspect, the embodiments of the present application provide a kind of ray detector, comprising: scintillator and photoelectric conversion module matched with the scintillator;
[0007] Wherein, the scintillator has transverse detection zone and longitudinal detection zone, the transverse detection zone and the longitudinal detection zone are all long strip shape;One side of the transverse detection zone has multiple longitudinal detection zones arranged side by side along the width direction of itself ；
[0008] The photoelectric conversion module has multiple photosensitive regions, wherein at least one of the photosensitive regions corresponds to the transverse detection zone;At least one of the photosensitive regions corresponds to the longitudinal detection zone.
[0009] Optionally, the length of the transverse detection zone is equal to the integer multiple of the width of the longitudinal detection zone.
[0010] Optionally, the length of the N transverse detection areas is equal to the width of the M longitudinal detection areas, and N and M are integers, and N is less than M.
[0011] Optionally, the length and width of the transverse detection area are respectively the same as the length and width of the longitudinal detection area.
[0012] Optionally, the length of the transverse detection area is equal to the length of the longitudinal detection area, but the width of the transverse detection area is less than the width of the longitudinal detection area.
[0013] Optionally, the ray detector further comprises a plurality of amplification circuits.
[0014] The input end of the plurality of amplification circuits is connected to the plurality of output ends of the photoelectric conversion module, and the output end of the plurality of amplification circuits is used to connect a control unit in the device where the ray detector is located.
[0015] Optionally, each amplification circuit comprises a transimpedance amplification circuit and a voltage amplification circuit.
[0016] The input end of the transimpedance amplification circuit is connected to one output end of the photoelectric conversion module; the input end of the voltage amplification circuit is connected to the output end of the transimpedance amplification circuit; and the output end of the voltage amplification circuit is the output end of each amplification circuit.
[0017] Optionally, the transimpedance amplification circuit comprises a first transimpedance amplifier, a first gain resistor, a third resistor, a first bias resistor, a first filter capacitor, a second filter capacitor, and a sixth filter capacitor.
[0018] One output end of the photoelectric conversion module is connected to the inverting terminal of the first transimpedance amplifier through the third resistor; the first gain resistor is connected to the output end of the first transimpedance amplifier; the first filter capacitor is connected in parallel across the first gain resistor; the non-inverting terminal of the first transimpedance amplifier is grounded through the first bias resistor; and the power supply terminal of the first transimpedance amplifier is connected to a first preset power supply.
[0019] The voltage amplification circuit comprises a second gain resistor, a third gain resistor, a second bias resistor, a second transimpedance amplifier, a third filter capacitor, a fourth filter capacitor, a fifth filter capacitor, and a fifth resistor.
[0020] The output end of the first transimpedance amplifier is connected to the inverting terminal of the second transimpedance amplifier through the third gain resistor; the second gain resistor is connected to the output end of the second transimpedance amplifier; and the power supply terminal of the second transimpedance amplifier is connected to a second preset power supply.
[0021] The power supply end of the second transimpedance amplifier is also connected to the third filter capacitor and the fifth filter capacitor; the same direction end of the second transimpedance amplifier is grounded through the second bias resistor; the output end of the second transimpedance amplifier is also connected to a control unit in a device in which the ray detector 100 is located through the fifth resistor; one end of the fifth resistor is also grounded through the fourth filter capacitor.
[0022] Optionally, the photoelectric conversion module is a silicon photodiode array, a light receiving surface of each photodiode in the silicon photodiode array is a light receiving surface of each photoelectric conversion module, and a wiring end of each photodiode is an output end of each photoelectric conversion module.
[0023] In a second aspect, the embodiments of the present application provide a surface density detection device, comprising a shell, and a ray source, a control unit and the ray detector of any one of the first aspect arranged in the shell, wherein the ray detector is used in cooperation with the ray source, and the ray source and the ray detector are connected to the control unit.
[0024] The ray detector and the surface density detection device provided by the present application have the following beneficial effects:
[0025] The present application provides a ray detector and a surface density detection device, and relates to the field of detection. The ray detector can be composed of a scintillator and a photoelectric conversion module cooperating with the scintillator. The scintillator has a transverse detection area and a longitudinal detection area. Both the transverse detection area and the longitudinal detection area are long strips, and are used to generate light signals of multiple detection areas based on incident rays. The photoelectric conversion module has multiple light receiving areas, and is used to generate multiple electric signals based on the light signals of the multiple detection areas. At least one light receiving area corresponds to only the transverse detection area, and at least one light receiving area corresponds to only the longitudinal detection area. Thus, the scintillator in the present application can be used to convert received rays into light signals. The multiple light receiving areas of the photoelectric conversion module are used to receive the light signals. The photoelectric conversion module is also used to convert the light signals into electric signals and transmit the electric signals to a control unit. The control unit is used to analyze the electric signals, realize surface density detection of a preset diaphragm, and improve the reliability, safety and stability of the surface density detection device. BRIEF DESCRIPTION OF DRAWINGS
[0026] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiments. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can also be obtained without creative labor on the basis of these drawings.
[0027] Figure 1A structural schematic diagram of a surface density detection device provided by an embodiment of the present application
[0028] Figure 2 A structural schematic diagram of a radiation detector provided by an embodiment of the present application Figure 1
[0029] Figure 3 A structural schematic diagram of a detection area provided by an embodiment of the present application Figure 1
[0030] Figure 4 A structural schematic diagram of a detection area provided by an embodiment of the present application Figure 2
[0031] Figure 5 A structural schematic diagram of a detection area provided by an embodiment of the present application Figure 3
[0032] Figure 6 A structural schematic diagram of a radiation detector provided by an embodiment of the present application Figure 2
[0033] Figure 7 A structural schematic diagram of a radiation detector provided by an embodiment of the present application Figure 3
[0034] Figure 8 A structural schematic diagram of an amplification circuit provided by an embodiment of the present application. DETAILED DESCRIPTION
[0035] In order to make the objectives, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some but not all of the embodiments of the present application. The components of the embodiments of the present application described and shown in the drawings herein can be arranged and designed in various different configurations.
[0036] Therefore, the detailed description of the embodiments of the present application provided in the drawings below is not intended to limit the scope of the claimed present application, but only represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work are within the scope of protection of the present application.
[0037] It should be noted that: similar reference numerals and letters represent similar items in the following drawings, therefore, once an item is defined in one drawing, it does not need to be further defined and explained in the subsequent drawings.
[0038] In the description of the present application, it should be understood that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship commonly understood by those skilled in the art, or the orientation or positional relationship commonly understood by those skilled in the art, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second", "third" and the like are only used to distinguish the description and cannot be understood as indicating or implying relative importance.
[0039] In the description of the present application, it should be understood that the terms "set", "mount", "connected", "connected" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium, or it can be connected inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.
[0040] Some embodiments of the present application will be described in detail below with reference to the accompanying drawings. The following examples and features in the examples can be combined with each other without conflict.
[0041] In order to better understand the schemes provided by the embodiments of the present application, the ray detector and the surface density detection device provided by the embodiments of the present application will be described in detail in sequence below with reference to the accompanying drawings.
[0042] Figure 1 The structure diagram of the surface density detection device provided by the embodiments of the present application is shown in FIG. 2. As shown in FIG. 2, the surface density detection device 200 can include a shell 210, and a ray source 220, a control unit 230 and a ray detector 100 arranged in the shell. Figure 1
[0043] The emission window of the ray source 220 faces the receiving window of the ray detector 100, which is used to ensure the consistency of the rays of each pixel in the ray detector 100; the ray source 220 and the ray detector 100 are connected to the control unit 230, which is used to control the ray source 220 and the ray detector 100.
[0044] The emission window of the ray source 220 is generally in the shape of a long strip, and the rays emitted by the ray source 220 are in the shape of a pyramid as a whole, so that the rays in the shape of a pyramid can be vertically emitted to the ray detector 100. The ray source 220 can be selected according to actual conditions, for example, the ray source 220 can be selected as an X-ray source.
[0045] The surface density detection device provided by the application can be composed of a shell, a ray source, a control unit and a ray detector arranged in the shell. The emission window of the ray detector is directed to the receiving window of the ray detector. The ray source and the ray detector are both connected to the control unit to control the ray source to emit a ray light source and the ray detector to receive the ray light source, so as to realize surface density detection of a preset film piece (such as a separation film, an aluminum foil, a copper foil, a lithium battery pole piece and other metal pieces or plastic films). The surface density detection device is reliable and safe and stable.
[0046] The surface density detection device provided by the application is further illustrated with reference to the accompanying drawings. Figure 2 The structure of a ray detector provided by the application Figure 1 As shown in the structure of a ray detector provided by the application Figure 2 The ray detector 100 can include a scintillator 110 and a photoelectric conversion module 120 matched with the scintillator 110.
[0047] The scintillator 110 has a transverse detection area 111 and a longitudinal detection area 112. Both the transverse detection area 111 and the longitudinal detection area 112 are in the shape of a long strip. Since the rays emitted to the transverse detection area 111 and the longitudinal detection area 112 are all in the shape of a conical edge as a whole, the transverse detection area 111 and the longitudinal detection area 112 are both in the shape of a long strip to ensure the consistency of rays in each pixel of the ray detector and effectively utilize the rays in the shape of a conical edge. Thus, the transverse detection area 111 and the longitudinal detection area 112 have transverse resolution and longitudinal resolution, respectively. Compared with the scheme that the transverse detection area 111 and the longitudinal detection area 112 are both in the shape of a square detection area, the scheme that the transverse detection area 111 and the longitudinal detection area 112 are both in the shape of a long strip detection area can ensure the resolution of the detection area of the scintillator 110 and reduce the amount of data collected by the detection area and the difficulty of data transmission and processing.
[0048] The combination of the transverse detection area 111 and the longitudinal detection area 112 can be illustrated with reference to the accompanying drawings. Figure 3 The structure of a detection area provided by the application Figure 1 The structure of a detection area provided by the application Figure 3The side of the lateral detection area 111 has a plurality of longitudinal detection areas 112 arranged side by side along the width direction of the lateral detection area 111. In this way, the space of the scintillator 110 can be maximally utilized by arranging a plurality of longitudinal detection areas 112 on one side of the lateral detection area 111 along the width direction of the lateral detection area 111, thereby increasing the structural stability of the scintillator 110, and the scintillator 110 has both lateral resolution and longitudinal resolution, and the problem of ray waste in the prior art is effectively improved and solved.
[0049] It should be noted that the way of arranging a plurality of longitudinal detection areas 112 on one side of the lateral detection area 111 along the width direction of the lateral detection area 111 can be selected according to actual conditions, which is not limited here. For example, the plurality of longitudinal detection areas 112 can be spliced one by one along the width direction of the lateral detection area 111, or the detection area of a piece of scintillator 110 can be divided into regions in the above-mentioned way.
[0050] The photoelectric conversion module 120 has a plurality of light sensing regions, at least one of which corresponds to the lateral detection area 111, and at least one of which corresponds to the longitudinal detection area 112. Since the lateral detection area 111 and the longitudinal detection area 112 can be used to generate a plurality of light signals of the detection area based on the incident rays, and a plurality of electrical signals can be generated based on the light signals in the lateral detection area 111 and the longitudinal detection area 112, for example, for converting the light signal of each lateral detection area 111 into an electrical signal, and converting the light signal of each longitudinal detection area 112 into an electrical signal.
[0051] It should be noted that the cooperation form of the scintillator 110 and the photoelectric conversion module 120 is not limited here and can be set according to actual conditions. For example, the scintillator 110 and the photoelectric conversion module 120 can be connected by direct contact (such as Figure 2 ) or by optical fiber coupling. In addition, it should be noted that the plurality of light sensing regions of the photoelectric conversion module 120 needs to be greater than or equal to the plurality of detection areas on the two detection areas of the lateral detection area 111 and the longitudinal detection area 112, so as to ensure that the light signals on the lateral detection area 111 and the longitudinal detection area 112 can be received by the photoelectric conversion module 120.
[0052] The ray detector provided in the application can be composed of a scintillator and a photoelectric conversion module matched with the scintillator; wherein the scintillator is composed of a transverse detection area and a longitudinal detection area, both of which are long strips and used to generate light signals of multiple detection areas based on incident rays; the photoelectric conversion module has multiple light-sensitive areas used to generate multiple electric signals based on the light signals of the multiple detection areas, wherein at least one light-sensitive area corresponds to the transverse detection area only; and at least one light-sensitive area corresponds to the longitudinal detection area only. Thus, the scintillator in the application can be used to convert the received rays into light signals, the multiple light-sensitive areas of the photoelectric conversion module are used to receive the light signals, the photoelectric conversion module is further used to convert the light signals into electric signals and transmit the electric signals to a control unit, and the control unit is used to analyze the electric signals, realize the detection of the surface density of the preset diaphragm and improve the reliability, safety and stability of the surface density detection equipment.
[0053] Optionally, in a possible implementation, the length of the transverse detection area 111 is equal to an integer multiple of the width of the longitudinal detection area 112, which facilitates the splicing combination application and data acquisition among the multiple detection areas in the ray detector 100, and meanwhile, can reduce the interference of the outside world on the test results and improve the detection accuracy.
[0054] The length of the transverse detection area is equal to an integer multiple of the width of the longitudinal detection area, which facilitates the splicing combination application and data acquisition among the multiple detection areas, and meanwhile, can reduce the interference of the outside world on the test results and improve the detection accuracy.
[0055] Optionally, in a possible implementation, the length of the N transverse detection areas 111 is equal to the width of the M longitudinal detection areas 112, and N and M are both integers, and N is less than M.
[0056] For example, Figure 4 A structure diagram of a detection area provided in the embodiment of the application Figure 2 As Figure 4 shown, when N is 2 and M is 10, one side of the 2 transverse detection areas 111 is provided with multiple longitudinal detection areas 112 arranged side by side along the first direction, and the length of the 2 transverse detection areas 111 is equal to the width of the 10 longitudinal detection areas 112, which exactly meets the requirement that the length of the transverse detection area 111 is equal to an integer multiple of the width of the longitudinal detection area 112.
[0057] It should be noted that the combination mode that the length of the N transverse detection areas 111 is equal to the width of the M longitudinal detection areas 112 can be selected according to actual conditions, which is not limited herein, for example, based on the length of the 2 transverse detection areas 111, the 10 longitudinal detection areas 112 can be spliced one by one along the first direction, or the areas can be divided on one detection area according to the above mode.
[0058] The X-ray detector provided in this application has N transverse detection zones whose lengths are equal to the widths of M longitudinal detection zones, and N and M are both integers, with N being less than M. This facilitates the splicing and combination of multiple detection zones for application and data acquisition. At the same time, it can reduce external interference with test results and improve detection accuracy.
[0059] Optionally, in one possible embodiment, the length and width of the transverse detection area 111 are the same as the length and width of the longitudinal detection area 112, that is, the length of the transverse detection area 111 and the length of the longitudinal detection area 112 are the same; the width of the transverse detection area 111 and the width of the longitudinal detection area 112 are the same. In other words, the transverse detection area 111 and the longitudinal detection area 112 have the same shape and size, which is beneficial to the production and manufacturing of the X-ray detector.
[0060] The radiation detector provided in this application has the same length and width of the transverse detection area as the same as the length and width of the longitudinal detection area, which is beneficial to the production and manufacturing of the radiation detector.
[0061] Optionally, in one possible embodiment, the length of the lateral detection area 111 is equal to the length of the longitudinal detection area 112, but the width of the lateral detection area 111 is smaller than the width of the longitudinal detection area 120, which is beneficial to improving the resolution of the lateral detection area 111.
[0062] For example, Figure 5 A schematic diagram of the structure of a detection area provided in an embodiment of this application. Figure 3 .like Figure 5 As shown. The length of the transverse detection area 111 is equal to the length of the longitudinal detection area 112, but the width of the transverse detection area 111 is less than the width of the longitudinal detection area 120.
[0063] The X-ray detector provided in this application has a transverse detection zone with a length equal to that of a longitudinal detection zone, but a width smaller than that of a longitudinal detection zone, which is beneficial for improving the resolution of the transverse detection zone.
[0064] exist Figure 2 Based on the above, the areal density detection device provided in the embodiments of this application will be further illustrated below with reference to the accompanying drawings. Figure 6 A schematic diagram of the structure of a radiation detector provided in this application embodiment. Figure 2 .like Figure 6 As shown, the X-ray detector 100 may also include multiple amplifier circuits 130.
[0065] The input ends of the plurality of amplification circuits 130 are respectively connected to the plurality of output ends of the photoelectric conversion module 120, for inputting the electrical signals output by the plurality of output ends of the photoelectric conversion module 120 to the corresponding amplification circuits 130 to amplify the electrical signals, so as to realize accurate amplification of each electrical signal output by the photoelectric conversion module 120; and the output ends of the plurality of amplification circuits 130 are used to connect to the control unit 230 in the device where the radiation detector 100 is located, for inputting the amplified electrical signals to the control unit 230, and the control unit 230 analyzes the amplified electrical signals to see whether they conform to the preset surface density variation range of the membrane sheet, and then obtains the loss degree of the surface density of the preset membrane sheet.
[0066] The radiation detector provided in the application can also be composed of a plurality of amplification circuits; the input ends of the plurality of amplification circuits are respectively connected to the plurality of output ends of the photoelectric conversion module, and the output ends of the plurality of amplification circuits are used to connect to the control unit in the device where the radiation detector is located, so as to convert the optical signals into nano-ampere-level electrical current by the photoelectric module, output the optical signals to the plurality of amplification circuits for amplification, and realize accurate amplification of each output signal.
[0067] The surface density detection device provided in the embodiments of the application will be further described in combination with the accompanying drawings. Figure 7 The structure of the radiation detector provided in the embodiments of the application Figure 3 As shown in Figure 7 , each amplification circuit 130 can include a transimpedance amplification circuit 131 and a voltage amplification circuit 132.
[0068] The input end of the transimpedance amplification circuit 131 is connected to one output end of the photoelectric conversion module 120, for converting the electrical signal (such as the current signal SIG1) output by the one output end of the photoelectric conversion module 120 into a voltage; the input end of the voltage amplification circuit 132 is connected to the output end of the transimpedance amplification circuit 131; the output end of the voltage amplification circuit 132 is the output end of each amplification circuit 130, and the output end of the voltage amplification circuit 132 is used to connect to the control unit 230 in the device where the radiation detector 100 is located, for inputting the amplified electrical signals to the control unit 230, and the control unit 230 analyzes the amplified electrical signals to see whether they conform to the preset surface density variation range of the membrane sheet, and then obtains the loss degree of the surface density of the preset membrane sheet.
[0069] The ray detector provided in the application, wherein each amplification circuit can be composed of a transimpedance amplification circuit and a voltage amplification circuit; an input end of the transimpedance amplification circuit is connected with an output end of the photoelectric conversion module; an input end of the voltage amplification circuit is connected with an output end of the transimpedance amplification circuit; and an output end of the voltage amplification circuit is an output end of each amplification circuit. Thus, the transimpedance amplification circuit is used to convert the electrical signal output by the output end of the photoelectric conversion module into a voltage signal, and the voltage amplification circuit is used to amplify the voltage signal and transmit it to the control unit, which is used to analyze the amplified electrical signal to see whether it conforms to the surface density variation range of the preset diaphragm type, and then obtain the loss degree of the surface density of the preset diaphragm type, so as to realize the surface density detection of the preset diaphragm type and improve the reliability and safety of the surface density detection equipment.
[0070] Optionally, the application also provides a schematic diagram of an amplification circuit 130, Figure 8 The application provides a schematic diagram of an amplification circuit. Figure 8 As shown in the figure, the amplification circuit 130 can include a transimpedance amplification circuit 131 and a voltage amplification circuit 132.
[0071] The transimpedance amplification circuit 131 can include a first transimpedance amplifier U1, a first gain resistor R2, a third resistor R3, a first bias resistor R6, a first filter capacitor C1, a second filter capacitor C2 and a sixth filter capacitor C6.
[0072] The electrical signal (such as a current signal SIG1) output by the output end of the photoelectric conversion module 120 is connected with the inverting end pin 8 of the first transimpedance amplifier U1 through the third resistor R3; the first gain resistor R2 is connected with the output pin 4 of the first transimpedance amplifier U1, which is used to convert the current signal SIG1 into a voltage signal Uo1 and output the voltage signal as Uo1; the same phase end pin 1 of the first transimpedance amplifier U1 is connected with the ground AGND through the first bias resistor R6; and the power supply pin 6 and pin 3 of the first transimpedance amplifier U1 are respectively connected with a first preset power supply (such as +2.5V and -2.5V). Thus, the transimpedance amplification circuit 131 can be used to convert the input current signal SIG1 into a voltage signal.
[0073] The voltage amplification circuit 132 can include a second gain resistor R1, a third gain resistor R4, a second bias resistor R7, a second transimpedance amplifier U2, a third filter capacitor C3, a fourth filter capacitor C4, a fifth filter capacitor C5 and a fifth resistor R5.
[0074] The output pin 4 of the first trans-impedance amplifier U1 is connected to the inverting terminal pin 4 of the second trans-impedance amplifier U2 through the third gain resistor R4; the second gain resistor R1 is connected to the pin 1 of the second trans-impedance amplifier U2; the power supply pin 5 and the pin 2 of the second trans-impedance amplifier U2 are respectively connected to the second preset power supply (such as +5V and -5V); the power supply pin 5 and the pin 2 of the second trans-impedance amplifier U2 are also respectively connected to the third filter capacitor C3 and the fifth filter capacitor C5; the pin 3 of the second trans-impedance amplifier U2 is connected to the ground through the second bias resistor R7; the output pin 1 of the second trans-impedance amplifier U2 is connected to the control unit 230 in the device where the radiation detector 100 is located through the fifth resistor R5, for inputting the amplified signal AD1 output by the second trans-impedance amplifier U2 into the control unit 230, which is used for analyzing the amplified electrical signal to see whether it conforms to the preset range of the surface density variation of the membrane sheet, and then obtaining the loss degree of the surface density of the preset membrane sheet; one end of the fifth resistor R5 is also connected to the ground through the fourth filter capacitor C4; for constituting a low-pass filter circuit with the fourth filter capacitor C4; thus, the voltage amplification circuit 132 can be used for inversely amplifying the input voltage signal.
[0075] The ray detector provided in the application, wherein the transimpedance amplifier in the amplification circuit can be composed of a first transimpedance amplifier, a first gain resistor, a third resistor, a first bias resistor, a first filter capacitor, a second filter capacitor and a sixth filter capacitor; wherein one output end of the photoelectric conversion module is connected to the inverting terminal of the first transimpedance amplifier through the third resistor; the first gain resistor is connected to the output terminal of the first transimpedance amplifier; the first filter capacitor is connected in parallel to the two ends of the first gain resistor; the non-inverting terminal of the first transimpedance amplifier is grounded through the first bias resistor; and the power supply terminal of the first transimpedance amplifier is connected to a first preset power supply. The voltage amplifier in the amplification circuit can be composed of a second gain resistor, a third gain resistor, a second bias resistor, a second transimpedance amplifier, a third filter capacitor, a fourth filter capacitor, a fifth filter capacitor and a fifth resistor, wherein the output terminal of the first transimpedance amplifier is connected to the inverting terminal of the second transimpedance amplifier through the third gain resistor; the second gain resistor is connected to the output terminal of the second transimpedance amplifier; the power supply terminal of the second transimpedance amplifier is connected to a second preset power supply; the power supply terminal of the second transimpedance amplifier is also connected to the third filter capacitor and the fifth filter capacitor; the non-inverting terminal of the second transimpedance amplifier is grounded through the second bias resistor; the output terminal of the second transimpedance amplifier is also connected to the control unit in the device where the ray detector 100 is located through the fifth resistor; and one end of the fifth resistor is also grounded through the fourth filter capacitor. Thus, the electrical signal output by one output end of the photoelectric conversion module is converted into a voltage signal by the transimpedance amplifier, and then the voltage signal is amplified by the voltage amplifier and transmitted to the control unit, which is used to analyze the amplified electrical signal to see whether it meets the range of the surface density variation of the preset diaphragm, and then obtain the loss degree of the surface density of the preset diaphragm, so as to realize the detection of the surface density of the preset diaphragm and improve the reliability and safety of the surface density detection device.
[0076] Optionally, in a possible implementation, the photoelectric conversion module 120 is a silicon photodiode array, the light-receiving surfaces of the plurality of photodiodes in the silicon photodiode array are the plurality of light-receiving surfaces of the plurality of photoelectric conversion modules, and the plurality of photodiodes are used to receive the light signals on the scintillator 110 in the plurality of detection areas; and the wiring ends of the plurality of photodiodes are the plurality of output ends of the plurality of photoelectric conversion modules, and the plurality of photodiodes are used to convert the plurality of light signals into the plurality of electrical signals.
[0077] The ray detector provided in the application, wherein the photoelectric conversion module is a silicon photodiode array, the light-receiving surfaces of the plurality of photodiodes in the silicon photodiode array are the plurality of light-receiving surfaces of the plurality of photoelectric conversion modules, and the wiring ends of the plurality of photodiodes are the plurality of output ends of the plurality of photoelectric conversion modules, which are used to convert the light signals on the scintillator into electrical signals for subsequent processing, thereby improving the reliability of the ray detector.
[0078] The above descriptions are only the preferred embodiments of the present application, and are not intended to limit the present application. The present application can have various modifications and changes for those skilled in the art. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims
1. A radiation detector, characterized by, The application relates to a radiation detector. The radiation detector comprises a scintillator and a photoelectric conversion module matched with the scintillator. The scintillator has a lateral detection area and a longitudinal detection area, both of which are long strips; one side of the lateral detection area has a plurality of longitudinal detection areas arranged side by side along the width direction of the lateral detection area ； The photoelectric conversion module has a plurality of light-sensitive areas, at least one of which corresponds to the lateral detection area only, and at least one of which corresponds to the longitudinal detection area only.
2. The radiation detector of claim 1, wherein, The length of the lateral detection area is equal to an integral multiple of the width of the longitudinal detection area.
3. The radiation detector of claim 1, wherein, The length of N lateral detection areas is equal to the width of M longitudinal detection areas, and N and M are integers, and N is less than M.
4. The radiation detector of claim 1, wherein, The length and width of the lateral detection area are the same as the length and width of the longitudinal detection area.
5. The radiation detector of claim 1, wherein, The length of the lateral detection area is equal to the length of the longitudinal detection area, but the width of the lateral detection area is less than the width of the longitudinal detection area.
6. The radiation detector of claim 1, wherein, The radiation detector further comprises a plurality of amplification circuits. The input ends of the plurality of amplification circuits are connected to the output ends of the photoelectric conversion module respectively, and the output ends of the plurality of amplification circuits are used for connecting a control unit in a device where the radiation detector is located.
7. The radiation detector of claim 6, wherein, Each amplification circuit comprises a transimpedance amplification circuit and a voltage amplification circuit. The input end of the transimpedance amplification circuit is connected to an output end of the photoelectric conversion module, the input end of the voltage amplification circuit is connected to the output end of the transimpedance amplification circuit, and the output end of the voltage amplification circuit is the output end of each amplification circuit.
8. The radiation detector of claim 7, wherein, The transimpedance amplification circuit comprises a first transimpedance amplifier, a first gain resistor, a third resistor, a first bias resistor, a first filter capacitor, a second filter capacitor and a sixth filter capacitor. The output end of the photoelectric conversion module is connected to the inverting end of the first transimpedance amplifier through the third resistor, the first gain resistor is connected to the output end of the first transimpedance amplifier, the first filter capacitor is connected across the first gain resistor, the non-inverting end of the first transimpedance amplifier is grounded through the first bias resistor, and the power supply end of the first transimpedance amplifier is connected to a first preset power supply. The voltage amplification circuit comprises a second gain resistor, a third gain resistor, a second bias resistor, a second transimpedance amplifier, a third filter capacitor, a fourth filter capacitor, a fifth filter capacitor and a fifth resistor. The output end of the first transimpedance amplifier is connected to the inverting end of the second transimpedance amplifier through the third gain resistor, the second gain resistor is connected to the output end of the second transimpedance amplifier, and the power supply end of the second transimpedance amplifier is connected to a second preset power supply. The power supply end of the second transimpedance amplifier is also connected to the third filter capacitor and the fifth filter capacitor, the non-inverting end of the second transimpedance amplifier is grounded through the second bias resistor, the output end of the second transimpedance amplifier is also connected to the control unit in the device where the radiation detector is located through the fifth resistor, and one end of the fifth resistor is also grounded through the fourth filter capacitor.
9. The radiation detector of claim 1, wherein, The photoelectric conversion module is a silicon photodiode array, the light-sensitive surfaces of a plurality of photodiodes in the silicon photodiode array are the light-sensitive surfaces of the plurality of photoelectric conversion modules, and the wiring ends of the plurality of photodiodes are the output ends of the photoelectric conversion module.
10. An areal density detection apparatus, characterized by, The application relates to a radiation detector. A housing, and a radiation source, a control unit and a radiation detector according to any one of claims 1 to 9 arranged within the housing, wherein the radiation detector is configured to be used in cooperation with the radiation source, and wherein the radiation source and the radiation detector are both connected to the control unit.