Semiconductor power device test heating table

Abstract

The utility model discloses a semiconductor power device test heating table, and relates to the technical field of test heating tables. Comprising a light metal layer and a ceramic layer, a connecting groove is formed in the top end of the light metal layer, a plurality of insulating materials are fixed in the connecting groove, heating elements are inserted in the connecting groove, the insulating materials are located between the heating elements, a plurality of mounting grooves are formed in the bottom end of the ceramic layer, and temperature probes are mounted in the mounting grooves. The heating element is installed in the light metal layer, the temperature probe is installed in the ceramic layer, so that the situation that the heating element and the temperature probe are installed together and are inconvenient to find and disassemble is avoided, in addition, by arranging the spring, the size of the heating element can be changed due to thermal expansion and cold contraction in the working process, and the temperature probe can be conveniently and rapidly found out. The spring can play a buffering role to absorb the stress and vibration, so that the mechanical damage to the heating element is reduced, and the heating element is prevented from being broken and damaged due to stress concentration.

Description

TECHNICAL FIELD

[0001] The utility model relates to test heating platform technical field, concretely is a kind of semiconductor power device test heating platform. BACKGROUND

[0002] When laboratory carries out semiconductor device test analysis, heating platform needs to be used to heat, to create the required working environment, and need to accurately keep constant temperature state, one kind of semiconductor power device test heating platform (announcement number:CN214750672U) in use There is the following shortcomings:

[0003] In its use process, by installing multiple heating elements and temperature probe in multiple strip grooves, heating element heats the semiconductor device to be detected, temperature probe real-time monitoring the temperature of each position of upper ceramic layer of heating platform, but when one of heating element and temperature probe appears damage, since heating element and temperature probe are gathered in strip groove, it is inconvenient to find and disassemble it quickly, for this patent proposes a kind of semiconductor power device test heating platform to solve the above problems. UTILITY MODEL CONTENT

[0004] The utility model aims at providing a kind of semiconductor power device test heating platform to solve the problems raised in the above background.

[0005] To achieve the above object, the utility model provides the following technical scheme: a kind of semiconductor power device test heating platform, including lightweight metal layer and ceramic layer, the top of lightweight metal layer is equipped with connecting groove, multiple insulating materials are fixed in connecting groove, heating element is inserted in connecting groove, insulating material is between heating element, the bottom of ceramic layer is equipped with multiple installation grooves, temperature probe is installed in installation groove.

[0006] Preferably, the side of the heating element is provided with an energizing wire, the end of the energizing wire is fixed with a first connector after penetrating through the lightweight metal layer, one side of the lightweight metal layer is fixed with a first mounting plate, and the first connector is mounted on the first mounting plate.

[0007] Preferably, the side of the temperature probe is provided with a connecting wire, the end of the connecting wire is fixed with a second connector after penetrating through the ceramic layer, one side of the ceramic layer is provided with a second mounting plate, and the second connector is mounted on the second mounting plate.

[0008] Preferably, multiple springs are installed in the connecting groove, one side of the spring is fixed with a limiting plate, and the limiting plate is in contact with the heating element.

[0009] Preferably, the bottom of the ceramic layer is provided with a sliding groove, and the top of the lightweight metal layer is fixed with a sliding block, and the sliding block is slidingly connected in the sliding groove.

[0010] Preferably, the two ends of the light metal layer are fixed with first mounting blocks, the two ends of the ceramic layer are fixed with second mounting blocks, one side of the first mounting block is rotationally connected with a rotating rod, one side of the rotating rod is fixed with a limiting rod, one side of the second mounting block is provided with a connecting port, and the rotating rod and the limiting rod are matched with the connecting port.

[0011] Compared with the prior art, the utility model has the advantages that:

[0012] By installing the heating element in the light metal layer and the temperature probe in the ceramic layer, the heating element and the temperature probe are not installed together, which is convenient for quickly finding and dismounting them.

[0013] In addition, by arranging the spring, the heating element may change in size due to thermal expansion and cold shrinkage during the working process or be affected by external vibration, the spring can play a buffering role, absorb the stress and vibration, reduce the mechanical damage to the heating element, prevent the heating element from being broken and damaged due to stress concentration, and prolong the service life of the heating element. BRIEF DESCRIPTION OF DRAWINGS

[0014] Figure 1 It is a whole structure schematic view of the utility model;

[0015] Figure 2 It is a structure schematic view of the utility model after removing the ceramic layer;

[0016] Figure 3 It is a ceramic layer structure schematic view of the utility model;

[0017] Figure 4 It is a first mounting block structure schematic view of the utility model.

[0018] In the drawing: 1, light metal layer; 2, ceramic layer; 3, first mounting plate; 4, power supply wire; 5, first connector; 6, first mounting block; 7, second mounting block; 8, second mounting plate; 9, insulating material; 10, spring; 11, heating element; 12, sliding block; 13, temperature probe; 14, connecting wire; 15, mounting groove; 16, second connector; 17, connecting port; 18, rotating rod; 19, limiting rod. DETAILED DESCRIPTION

[0019] The technical solutions in the embodiments of the utility model will be clearly and completely described below with reference to the drawings in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by those skilled in the art without creative labor fall within the protection scope of the utility model.

[0020] When the laboratory carries out the semiconductor device test analysis, need to use the heating platform to heat, to create the required working environment, and need to keep the constant temperature state accurately, for the semiconductor device performance test and analysis under different temperature, evaluate its performance parameters and stability, in the microelectronic field, can be used to explore the preparation of new and efficient microelectronic devices, the development of market competitiveness microelectronic devices and process, the utility model provides a kind of semiconductor power device test heating platform, by installing heating element 11 in lightweight metal layer 1, temperature probe 13 is installed in ceramic layer 2, so as to avoid heating element 11 and temperature probe 13 are installed together, it is not convenient to find and disassemble quickly.

[0021] As Figures 1-4 The utility model provides a technical scheme: a kind of semiconductor power device test heating platform, including lightweight metal layer 1 and ceramic layer 2, the top of lightweight metal layer 1 is equipped with connecting groove, connecting groove is fixed with multiple insulating materials 9, connecting groove is inserted with heating element 11, insulating material 9 is between heating element 11, the bottom of ceramic layer 2 is equipped with multiple installation grooves 15, temperature probe 13 is installed in installation groove 15.The side of heating element 11 is installed with electrified wire 4, the end of electrified wire 4 is fixed with first connector 5 after being penetrated through lightweight metal layer 1, the side of lightweight metal layer 1 is fixed with first mounting plate 3, and first connector 5 is installed on first mounting plate 3.The side of temperature probe 13 is installed with connecting line 14, the end of connecting line 14 is fixed with second connector 16 after being penetrated through ceramic layer 2, the side of ceramic layer 2 is installed with second mounting plate 8, and second connector 16 is installed on second mounting plate 8, first connector 5 is installed on first mounting plate 3 by multiple first bolts, second connector 16 is installed on second mounting plate 8 by multiple second bolts, and multiple third bolts are screwed between temperature probe 13 and ceramic layer 2.

[0022] It should be noted that the heating element 11 is installed in the light metal layer 1, and the temperature probe 13 is installed in the ceramic layer 2, which is made of al2o3 ceramic material with a thickness of not more than 5mm. The material of the light metal layer 1 is al alloy, which provides current for the heating element 11 through the power controller to generate heat. The temperature probe 13 monitors the temperature of each position of the heating platform in real time and feeds back the data to the power controller. The controller adjusts the power of the heating element 11 according to the feedback information to realize accurate temperature control. The heating element 11 is an iron-chromium-aluminum heating wire, which generates heat through current to provide the required temperature environment for semiconductor power device testing. The heating element 11 has high power density, which can quickly heat the heating platform to the set temperature, and also can quickly cool down after the test is completed, improving the test efficiency. The temperature probe 13 is a pt100 temperature probe, which is used to monitor the temperature of the heating platform in real time to ensure the accuracy and stability of temperature control. A clamp is installed on the heating platform, which is made of iron and is used to fix the semiconductor device on the heating platform to ensure good contact and temperature conduction between the device and the heating platform. When the heating element 11 and the temperature probe 13 need to be removed, the light metal layer 1 is moved to make the heating element 11 and the temperature probe 13 leak out, and then the power supply wire 4 is detached from the first joint 5, and the heating element 11 is pulled out. Then, the connecting wire 14 is detached from the second joint 16, and then the temperature probe 13 is detached from the ceramic layer 2.

[0023] As shown in Figure 2 and Figure 4 , a plurality of springs 10 are installed in the connecting groove, one side of the spring 10 is fixed with a limiting plate, and the limiting plate is in contact with the heating element 11. The bottom end of the ceramic layer 2 is provided with a sliding groove, and the top end of the light metal layer 1 is fixed with a sliding block 12 which is slidingly connected in the sliding groove. The two ends of the light metal layer 1 are fixed with first mounting blocks 6, and the two ends of the ceramic layer 2 are fixed with second mounting blocks 7. One side of the first mounting block 6 is rotatably connected with a rotating rod 18, one side of the rotating rod 18 is fixed with a limiting rod 19, one side of the second mounting block 7 is provided with a connecting port 17, and the rotating rod 18 and the limiting rod 19 are matched with the connecting port 17.

[0024] It should be noted that the heating element 11 may change in size due to thermal expansion and contraction during operation, or be affected by external vibration. The spring 10 can play a buffering role to absorb these stresses and vibrations, reduce mechanical damage to the heating element 11, prevent the heating element 11 from breaking and damaging due to stress concentration, and prolong its service life. By extruding the spring 10, the heating element 11 is more easily inserted into the connecting groove. In addition, by inserting the rotating rod 18 into the connecting port 17 and then rotating the limiting rod 19, the limiting rod 19 and the connecting port 17 do not coincide, which can realize the fixation between the light metal layer 1 and the ceramic layer 2.

[0025] Although the embodiments of the present application have been shown and described, it is to be understood that various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the present application, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A test heating station for semiconductor power devices, comprising a lightweight metal layer (1) and a ceramic layer (2), characterized in that: The top end of the light metal layer (1) is provided with connecting grooves, a plurality of insulating materials (9) are fixed in the connecting grooves, heating elements (11) are inserted into the connecting grooves, the insulating materials (9) are located between the heating elements (11), the bottom end of the ceramic layer (2) is provided with a plurality of mounting grooves (15), and temperature probes (13) are mounted in the mounting grooves (15).

2. The test and heat station for semiconductor power devices of claim 1, wherein: One side of the heating element (11) is provided with an electrified wire (4), the end of the electrified wire (4) is fixed with a first connector (5) after penetrating through the light metal layer (1), one side of the light metal layer (1) is fixed with a first mounting plate (3), and the first connector (5) is mounted on the first mounting plate (3).

3. The test and heat station for semiconductor power devices of claim 1, wherein: One side of the temperature probe (13) is provided with a connecting wire (14), the end of the connecting wire (14) is fixed with a second connector (16) after penetrating through the ceramic layer (2), one side of the ceramic layer (2) is provided with a second mounting plate (8), and the second connector (16) is mounted on the second mounting plate (8).

4. The test and heat station for semiconductor power devices of claim 1, wherein: A plurality of springs (10) are mounted in the connecting grooves, one side of the spring (10) is fixed with a limiting plate, and the limiting plate is in contact with the heating element (11).

5. The test and heat station for semiconductor power devices of claim 1, wherein: The bottom end of the ceramic layer (2) is provided with a sliding groove, and the top end of the light metal layer (1) is fixed with a sliding block (12) which is slidingly connected in the sliding groove.

6. The test and heat station for semiconductor power devices of claim 1, wherein: Both ends of the light metal layer (1) are fixed with first mounting blocks (6), both ends of the ceramic layer (2) are fixed with second mounting blocks (7), one side of the first mounting block (6) is rotatably connected with a rotating rod (18), one side of the rotating rod (18) is fixed with a limiting rod (19), one side of the second mounting block (7) is provided with a connecting port (17), and the rotating rod (18) and the limiting rod (19) are matched with the connecting port (17).

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