Bidirectional silicon controlled rectifier device and electronic equipment

Abstract

A bidirectional silicon controlled rectifier device and an electronic apparatus are provided. Exemplary bidirectional silicon controlled devices are formed inside and on top of a semiconductor substrate. The bidirectional silicon controlled rectifier device includes: a first doped region on a first surface side of a substrate, having a first conductivity type and connected to a first conductive terminal; a separate second doped region on a second surface side of the substrate opposite to the first surface, having the first conductivity type and connected to a second conductive terminal; and a gate region connected to the control terminal. The first and second regions have first and second parallel lateral surfaces, respectively. Between the first and second parallel lateral surfaces is a separation region not covered by the first region and the second region, the separation region is shaped as a strip extending along the first direction inside the gate region and exhibiting buckling outside the gate region.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to French Patent Application No. 24 / 01932 entitled “Composantélectronique”, filed February 28, 2024, and U.S. Patent Application No. 19 / 049,163 entitled “Electronic Component”, filed February 10, 2025, which are incorporated herein by reference to the fullest extent permitted by law. Technical Field

[0003] This disclosure generally relates to electronic components, and more specifically to triac devices. Background Technology

[0004] Many electronic components have been provided. Among these electronic components, more specifically, bidirectional thyristor devices (transistors for AC) have been provided.

[0005] However, existing electronic components (especially existing bidirectional thyristor devices) have various drawbacks. Utility Model Content

[0006] It is necessary to overcome all or some of the shortcomings of existing electronic components (in particular, bidirectional thyristor devices).

[0007] For this purpose, an embodiment provides a bidirectional thyristor device formed inside and on top of a semiconductor substrate, the bidirectional thyristor device comprising:

[0008] -A first doped region on the first surface side of the substrate has a first conductivity type and is connected to a first conductive terminal of a bidirectional thyristor device;

[0009] - A second doped region on the second surface side of the substrate opposite the first surface has a first conductivity type and is connected to a second conductive terminal of a bidirectional thyristor device; and

[0010] - The gate region is connected to the control terminal of the bidirectional thyristor device.

[0011] The first region and the second region have first and second parallel lateral surfaces, respectively. The bidirectional thyristor device includes a separation region between the first and second parallel lateral surfaces that is not covered by the first and second regions. The separation region has the shape of a strip that extends along a first direction inside the gate region and exhibits buckling outside the gate region.

[0012] According to an embodiment, the bidirectional thyristor device has a substantially rectangular shape in a top view.

[0013] According to an embodiment, the first direction is tilted at an angle of approximately 45° relative to the side of the rectangle formed by the bidirectional thyristor device.

[0014] According to an embodiment, the separation region has a strip shape outside the gate region, the strip extending along a second direction that is substantially parallel to the diagonal of the rectangle formed by the bidirectional thyristor device.

[0015] According to an embodiment, a short-circuit network is formed in each of the first and second regions, and each short-circuit network includes at least one through trench that extends along a third direction inside the gate region and exhibits buckling outside the gate region.

[0016] According to an embodiment, the third direction is substantially parallel to the first direction.

[0017] According to an embodiment, outside the gate region, each through trench extends along a fourth direction that is substantially parallel to the diagonal of the rectangle formed by the bidirectional thyristor device.

[0018] According to an embodiment, each short-circuit network also includes multiple through-holes.

[0019] According to an embodiment, the gate region has a substantially square shape in a top view.

[0020] According to an embodiment, the semiconductor substrate is doped with a second conductivity type opposite to the first conductivity type, where the first conductivity type and the second conductivity type are type N and type P, respectively.

[0021] An embodiment provides an apparatus including at least one bidirectional thyristor device as described above. Attached Figure Description

[0022] The foregoing features and advantages, as well as other features and advantages, will be described in detail in the remainder of the disclosure of specific embodiments given by way of illustration and not limitation, with reference to the accompanying drawings, in which:

[0023] Figure 1 This is a simplified partial side cross-sectional view of an example of a bidirectional thyristor device according to an embodiment;

[0024] Figure 2 yes Figure 1 Equivalent circuit diagram of a bidirectional thyristor device;

[0025] Figure 3 This is a simplified partial top view of an example of a bidirectional silicon-controlled device according to an embodiment;

[0026] Figure 4 This is a simplified partial top view of another example of a bidirectional silicon-controlled thyristor device according to the embodiment; and

[0027] Figure 5 It is schematically and partially illustrated according to embodiments including Figure 4 A block diagram of an example device using a bidirectional silicon controlled rectifier (SCR) device. Detailed Implementation

[0028] In the various figures, similar features have been designated by similar reference numerals. In particular, common structural and / or functional features in various embodiments may have the same reference numerals and may have the same structure, dimensions, and material properties.

[0029] For clarity, only steps and elements that aid in understanding the described embodiments are illustrated and described in detail. In particular, applications of the bidirectional silicon controlled rectifier (SCR) device are not detailed, and the described embodiments are compatible with all or most applications of the bidirectional SCR device and are subject to possible modifications within the capabilities of those skilled in the art upon reading this disclosure.

[0030] Unless otherwise indicated, when referring to two elements connected together, it means a direct connection without any intermediate elements other than conductors, and when referring to two elements coupled together, it means that the two elements can be connected or that they can be coupled through one or more other elements.

[0031] In the following description, unless otherwise indicated, when referring to terms that define absolute position (such as the terms "front", "back", "top", "bottom", "left", "right", etc.), or terms that define relative position (such as the terms "above", "below", "higher", "lower", etc.), or terms that define direction (such as the terms "horizontal", "vertical", etc.), they refer to the orientation of the accompanying drawings.

[0032] Unless otherwise indicated, the expressions “approximately,” “about,” “basically,” and “roughly” mean within 10%, preferably within 5%, or in the case of angular values, within 10°, preferably within 5°.

[0033] In the following description, unless otherwise indicated, the terms “insulating” and “conductive” mean electrically insulating and electrically conductive, respectively.

[0034] Figure 1 This is a simplified partial side cross-sectional view of an example of a bidirectional thyristor device (transistor for AC) 100 according to an embodiment.

[0035] In the example shown, a bidirectional silicon controlled rectifier (SCR) device 100 is formed inside and on top of a semiconductor substrate 101. The substrate 101 is, for example, a wafer or a piece of wafer made of a semiconductor material (e.g., silicon).

[0036] In the illustrated example, the bidirectional thyristor device 100 includes a doped semiconductor region 103 (P1) of a first conductivity type (e.g., type P) formed in a semiconductor substrate 101. In this example, region 103 extends from the surface 101T of the semiconductor substrate 101 (in... Figure 1 In the orientation, the upper surface of the semiconductor substrate 101 extends across the thickness of the semiconductor substrate 101.

[0037] In the illustrated example, on the surface 101T side of the semiconductor substrate 101, the bidirectional thyristor device 100 further includes a doped semiconductor region 105 (N1) of a second conductivity type opposite to the first conductivity type (i.e., N-type doping in this example). Region 105 is formed in region 103 and extends downward from the surface 101T of the semiconductor substrate 101 across the thickness of the semiconductor substrate 101 to a depth less than the depth of region 103. In the illustrated example, region 105 is therefore at least partially surrounded by or adjacent to region 103. Figure 1 In the orientation, the material of zone 103 is at least coated on some lateral surfaces and lower surfaces or bottom of zone 105.

[0038] In the example shown, the bidirectional thyristor device 100 also includes another doped semiconductor region 107 (N2) of a second conductivity type (i.e., N-type doping in this example). In this example, region 107 is located on the surface side of region 103 opposite to the surface 101T of the semiconductor substrate 101 (in... Figure 1 In the orientation, it is located on the lower surface side of zone 103. In the example shown, zone 107 is located directly below zone 103 and in contact with zone 103.

[0039] In the example shown, the bidirectional thyristor device 100 also includes another doped semiconductor region 109 (P2) of a first conductivity type (i.e., P-type doping in this example). In this example, region 109 is located on the surface side of region 107 opposite to region 103 (in... Figure 1 In the orientation, it is located on the lower surface side of region 107). In the example shown, region 109 is located directly below and in contact with region 107. In the example shown, region 109 is located on another surface 101B of the semiconductor substrate 101 opposite to surface 101T (in Figure 1 In the orientation, the lower surface of the semiconductor substrate 101 extends vertically across the thickness of the semiconductor substrate 101.

[0040] In the illustrated example, on the surface 101B side of the semiconductor substrate 101, the bidirectional silicon controlled device 100 further includes another doped semiconductor region 111 (N3) of a second conductivity type (i.e., N-type doping in this example). Region 111 is formed in region 109 and extends downward from the surface 101B of the semiconductor substrate 101 across the thickness of the semiconductor substrate 101 to a depth less than the depth of region 109. In the illustrated example, region 111 is therefore at least partially surrounded by or adjacent to region 109. Figure 1 In the orientation, the material of region 109 coats at least some of the lateral and upper surfaces of region 111. In the example shown, region 111 is not arranged to be aligned vertically with region 105.

[0041] In the illustrated example, the bidirectional thyristor device 100 also includes another doped semiconductor region 113 (N4) of a second conductivity type (i.e., N-type doping in this example). Region 113 is formed in region 103 and extends downward from the surface 101T of the semiconductor substrate 101 across the thickness of the semiconductor substrate 101 to a depth less than the depth of region 103. Region 113 is separate from region 105 and has, for example, a height or depth substantially equal to that of region 105. In the illustrated example, region 113 is therefore at least partially surrounded by or adjacent to region 103. Figure 1 In the orientation, the material of region 103 coats all lateral surfaces and the lower surface or bottom of region 113. In the example shown, region 113 is not arranged to be vertically aligned with region 111. However, this example is not limiting, and as a variation, region 113 may be arranged to be vertically aligned with region 111.

[0042] As an example, the semiconductor substrate 101 is doped with a first conductivity type (i.e., type P in this example), and regions 105, 107, 111 and 113 are formed by diffusion of a second conductivity type (i.e., type N in this example) doping type in the semiconductor substrate 101.

[0043] In the example shown, the bidirectional thyristor device 100 includes a first conductive terminal, also referred to as a first anode (A1), connected to regions 103 and 105. In this example, the conductive terminal A1 includes an electrode 115-1, on the surface of region 103 flush with the surface 101T of the semiconductor substrate 101 (in... Figure 1 In the orientation of the region 103, a portion of the upper surface of the region 105 extends laterally and contacts it. The conductive terminal A1 also includes, for example, another electrode 115-2, on the surface of the region 105 flush with the surface 101T of the semiconductor substrate 101 (in... Figure 1In the orientation, a portion of the upper surface of region 105 extends laterally and contacts it. Electrodes 115-1 and 115-2 are, for example, separate and electrically interconnected via an external circuit. As a variant, electrodes 115-1 and 115-2 may form a single electrode.

[0044] In the example shown, the bidirectional thyristor device 100 further includes a second conductive terminal, also referred to as a second anode (A2), connected to regions 109 and 111. In this example, conductive terminal A2 includes an electrode 117 on the surface of region 109 flush with surface 101B of the semiconductor substrate 101. Figure 1 In the orientation of the region 109, a portion of the lower surface of the region 109 extends laterally and contacts it. Electrode 117 is also located on the surface of region 111 that is flush with the surface 101B of the semiconductor substrate 101. Figure 1 In the orientation, a portion of the lower surface of area 111 extends above and contacts it.

[0045] In the illustrated example, the bidirectional thyristor device 100 further includes a gate terminal (G) connected to regions 103 and 113. In this example, the gate terminal G includes an electrode 119, which is flush with the surface 101T of the semiconductor substrate 101 in region 103. Figure 1 In the orientation of the region 113, a portion of the upper surface of region 103 extends laterally and contacts it. Electrode 119 is also located on the surface of region 113 that is flush with the surface 101T of the semiconductor substrate 101. Figure 1 In the orientation, a portion of the upper surface of area 113 extends above and contacts it.

[0046] As an example, electrodes 115-1, 115-2, 117, and 119 are all made of conductive materials, such as metals or metal alloys. Furthermore, each electrode 115-1, 115-2, 117, and 119 may have a single-layer or multi-layer structure.

[0047] In the example shown, the bidirectional silicon controlled rectifier device 100 includes: a gate region 121, in Figure 2 The region is represented by a dashed rectangle. The gate region 121 of the bidirectional thyristor device 100 extends in the semiconductor substrate 101 directly below region 113, substantially vertically aligned with the electrode 119 of the gate terminal G. In the illustrated example, the gate region 121 includes: the gate of the bidirectional thyristor device 100, including, for example, portions of semiconductor regions 103 and 113 arranged vertically aligned with electrode 119; and a primary trigger region of the bidirectional thyristor device 100. In this example, the primary trigger region of the bidirectional thyristor device 100 extends laterally from the gate and vertically from the gate to electrode 117.

[0048] Figure 1 Show Figure 2 The equivalent circuit diagram of the bidirectional thyristor device 100.

[0049] In the example shown, the bidirectional thyristor device 100 is represented by two thyristors Th1 and Th2, which are connected end-to-end in parallel and assembled between conductive terminals A1 and A2. Figure 1 In the diagram, thyristors Th1 and Th2 have: gate terminals connected to gate terminal G via gate region 121.

[0050] Thyristor Th1 includes, for example, a stack comprising a portion of regions 103, 107, 109, and 111 arranged substantially vertically aligned with electrode 115-1. Figure 1 In the orientation, on the right-hand side of the gate region 121). Electrodes 115-1 and 117, for example, form the anode and cathode electrodes of the thyristor Th1, respectively.

[0051] Similarly, the thyristor Th2 includes, for example, a stack comprising a portion of regions 105, 103, 107, and 109 arranged substantially vertically aligned with electrode 115-2 (in Figure 2 In the orientation, on the left-hand side of the gate region 121). Electrodes 115-2 and 117, for example, form the cathode and anode electrodes of the thyristor Th2, respectively.

[0052] exist Figure 2 In the example shown, a voltage VT exists between the conductive terminals A2 and A1 of the bidirectional thyristor device 100. The voltage VT is supplied, for example, by a power source located outside the bidirectional thyristor device 100. Figure 3 (Not shown in the image) is applied. Additionally, in this example, the control or gate current IG flows from the gate terminal G to the gate region 121.

[0053] When the control current IG is essentially zero, the bidirectional thyristor 100 is in the off state, preventing the current IT from flowing between its conductive terminals A2 and A1.

[0054] From the off state, when the control current IG becomes greater than the gate threshold current IGT in absolute value, for example, under the influence of the applied control current pulse IG, the bidirectional thyristor 100 then switches to the on state. In the on state, the current IT flows freely between the conductive terminals A2 and A1. When, for example, at the end of the pulse of the control current IG, the control current IG again becomes lower than the gate threshold current IGT, the bidirectional thyristor 100 remains in the on state as long as the current IT remains greater than the latching current IL of the bidirectional thyristor 100 in absolute value. In particular, if the pulse of the control current IG lasts long enough for the bidirectional thyristor 100 to complete its switch to the on state for a duration (e.g., a duration of approximately tens of microseconds), the latching current IL has a minimum value corresponding to the holding current IH. The holding current IH corresponds to the minimum value of the current IT required to keep the bidirectional thyristor 100 in the on state.

[0055] When the current IT becomes less than the holding current IH in absolute value, the bidirectional thyristor 100 then switches from the on state to the off state.

[0056] In fact, the gate threshold IGT, latch current IL, and holding current IH can take different values ​​in absolute terms, depending on whether the control current IG is positive or negative and / or the voltage VT is positive or negative.

[0057] The bidirectional thyristor 100 has a sensitivity that depends on the value of its gate threshold current IGT. The lower the gate threshold current IGT, the more sensitive the bidirectional thyristor 100 is considered to be.

[0058] The electrical performance of the bidirectional thyristor device 100 also depends on various other parameters specified using expressions such as dv / dt, di / dt, and (di / dt)c. These parameters are closely related to the characteristics of the gate region 121 (particularly its geometry and dimensions). In other words, slight changes in the gate region 121 cause significant changes in the electrical performance of the bidirectional thyristor device 100.

[0059] Figure 3 This is a simplified partial top view of the bidirectional thyristor device 100. In the example shown, the bidirectional thyristor device 100 has a generally square overall shape. As an example, the square formed by the bidirectional thyristor device 100 has a side length of approximately a few millimeters (e.g., equal to approximately 2 or 3 mm). The bidirectional thyristor device 100 is, for example, capable of handling a nominal current of approximately 16 to 20 A in the on-state.

[0060] In the example shown, in the top view, semiconductor region 105 and semiconductor region 111 have substantially equal surface areas. In particular, this allows us to determine that thyristors Th1 and Th2 have substantially the same electrical characteristics.

[0061] Furthermore, in this example, regions 105 and 111 do not overlap; that is, region 105 does not extend laterally but is aligned vertically with region 111. This specifically ensures that thyristors Th1 and Th2 can be controlled independently of each other.

[0062] As an example, the surface area of ​​each region 105, 111 is approximately half the surface area corresponding to the total surface area of ​​the bidirectional SCR device 100 minus the surface area of ​​region 113. In the illustrated example where the bidirectional SCR device 100 has a square overall shape, regions 105 and 111 both have, for example, a substantially triangular overall shape.

[0063] In the example shown, in Figure 3 The gate region 121, represented by the dashed square surrounding the semiconductor region 113, is located at the first corner of the square formed by the bidirectional thyristor device 100 (in Figure 3 In the orientation of the first corner, near the bottom right corner. Gate region 121 includes region 113 and a portion of regions 105 and 111 located near the first corner.

[0064] In the example shown, regions 105 and 111 have parallel lateral surfaces 105I and 111I, respectively. Surfaces 105I and 111I are, for example, substantially perpendicular. In this example, between the parallel lateral surfaces 105I and 111I, the bidirectional thyristor device 100 includes a separation region 301 that is not covered by regions 105 and 111. In other words, region 301 extends in a direction not aligned with regions 105 and 111 in the vertical direction.

[0065] In the illustrated example, the separation region 301 has the shape of a substantially straight line extending along a direction substantially parallel to the diagonal of the square formed by the bidirectional SCR device 100. In the illustrated example, the separation region 301 extends more precisely along the diagonal of the square formed by the bidirectional SCR device 100, the diagonal connecting a first corner to a second corner of the square, the second corner being opposite the first corner along the diagonal direction. In this example, in the top view, the lateral surfaces 105I and 111I of regions 105 and 111 are inclined at an angle of approximately 45° relative to the sides of the square formed by the bidirectional SCR device 100, and the direction in which the separation region 301 extends is inclined at an angle of approximately 45° relative to the sides of the square.

[0066] In the example shown, a short-circuit network 303 is formed in each of regions 105, 111. As an example, each network 303 includes at least one trench 305 formed in region 105 or 111. In the example shown, each trench 305 is a through trench, that is, it extends through the entire thickness of the region 105, 111 in which it is formed.

[0067] In the illustrated example, region 105 includes a trench 305 extending laterally in a direction substantially parallel to the side surface 105I of region 105. Similarly, in this example, region 111 includes a trench 305 extending laterally in a direction substantially parallel to the side surface 111I of region 111. In the illustrated example, each trench 305 is substantially straight along its entire length. In the illustrated example, each trench 305 extends in a direction inclined at an angle of approximately 45° relative to the side of the square formed by the bidirectional thyristor device 100. Figure 4 As in the example shown, for example near the second corner of the square formed by the bidirectional thyristor device 100, each trench 305 may appear on a side of region 105 or 111 that is different from side 105I or 111I.

[0068] Each network 303 also includes, for example, a through-hole 307 formed in region 105 or 111. In the example shown, each through-hole 307 is a through-hole, that is, it extends across the entire thickness of the region 105, 111 in which it forms. In the example shown, the through-holes 307 are organized into an array of rows and columns, for example, the array having a constant spacing, that is, a constant center-to-center distance between two adjacent through-holes 307. The through-holes 307 may have any cross-sectional shape, such as rectangular, elliptical, square, circular, etc.

[0069] In the example shown, for one or more trenches 305 and one or more through holes 307 formed in region 105, each trench 305 and through hole 307 is filled with the material of region 103, or for one or more trenches 305 and one or more through holes 307 formed in region 111, each trench 305 and through hole 307 is filled with the material of region 109.

[0070] Figure 4 This is a simplified partial top view of another example of a bidirectional thyristor device 400 according to an embodiment.

[0071] Figure 3 The bidirectional thyristor device 400 includes and Figure 4 The common elements of the bidirectional thyristor device 100. These common elements will not be described again in detail below.

[0072] Figure 3400 bidirectional thyristor device and Figure 5 The difference between the bidirectional thyristor device 100 and the bidirectional thyristor device 400 is that, according to an embodiment, the separation region 301 of the bidirectional thyristor device 400 exhibits a buckling 401 outside the gate region 121. According to this embodiment, the separation region 301 of the bidirectional thyristor device 400 has a strip shape, the strip extending along a first direction inside the gate region 121 and extending along a second direction that is not collinear with the first direction outside the gate region 121.

[0073] In the example shown, the bidirectional thyristor device 400 has a generally rectangular overall shape. In this example, a first direction is inclined at an angle of approximately 45° relative to the sides of the rectangle formed by the bidirectional thyristor device 400, and a second direction is substantially parallel to the diagonal of the rectangle formed by the bidirectional thyristor device 400. In the example shown, the second direction is substantially parallel to the diagonal, which couples a first corner of the rectangle formed by the bidirectional thyristor device 400 (region 113 is located near the first corner) to a second corner opposite the first corner along the diagonal direction.

[0074] Additionally, in this example, the trench 305 formed in regions 105 and 111 extends along a third direction inside gate region 121 and exhibits a buckling 403 outside gate region 121. In the illustrated example, the trench 305 extends outside gate region 121 along a fourth direction that is not collinear with the third direction. The third and fourth directions are, for example, parallel to the first and second directions, respectively. In the illustrated example, the third direction is tilted at an angle substantially equal to 45° relative to the sides of the rectangle formed by the bidirectional thyristor device 400, and the fourth direction is substantially parallel to the diagonal, which couples to the first and second corners of the rectangle formed by the bidirectional thyristor device 400.

[0075] The advantage of the bidirectional thyristor device 400 lies in the fact that the buckling 401 prevents modification of the structure of the gate region 121 for the bidirectional thyristor device 100. Therefore, the bidirectional thyristor device 400 has, for example, electrical characteristics that are the same as or similar to those of the bidirectional thyristor device 100. As an example, the bidirectional thyristor device 400 has gate threshold current IGT, latch current IL, and holding current IH that are substantially equal to those of the bidirectional thyristor device 100. The bidirectional thyristor device 400 also has, for example, dynamic performance that is substantially equal to that of the bidirectional thyristor device 100, characterized by parameters such as dv / dt, di / dt, and (di / dt)c. In terms of electrical characteristics, the bidirectional thyristor 400 differs from the bidirectional thyristor 100 in that the bidirectional thyristor 400 has a larger rating than the bidirectional thyristor 100, and in this case, the bidirectional thyristor 400 can withstand a higher rated current than the bidirectional thyristor 100.

[0076] The buckling 401 further advantageously enables semiconductor regions 105 and 111 to maintain substantially equal surface areas, and thus enables thyristors Th1 and Th2 to maintain substantially the same electrical characteristics.

[0077] Figure 5 It is schematically and partially illustrated according to embodiments including Figure 5 A block diagram of an example device 500 (DEV) of a bidirectional silicon controlled rectifier 400.

[0078] In the example shown, device 500 includes a power supply 501 (PWR). Power supply 501 is obtained, for example, by connecting device 500 to a power distribution network (e.g., a single-phase or three-phase AC distribution network). As a variant, power supply 501 may be a battery embedded in device 500, which then supplies, for example, DC current. In this case, the current supplied by power supply 501 is generated, for example, by an inverter (…). Figure 5 (Not shown in the image) is converted into AC current.

[0079] In the example shown, device 500 also includes control circuitry 503 (CTRL), which includes a bidirectional thyristor device 400. Although a single bidirectional thyristor device 400 has been shown in... Figure 4 However, control circuit 503 may of course include at least one other bidirectional thyristor device similar to or the same as bidirectional thyristor device 400. In the example shown, control circuit 503 is connected to power supply 501. In practice, bidirectional thyristor device 400 is, for example, packaged and soldered to the printed circuit board of control circuit 503.

[0080] Device 500 may also include, for example, a load 505, coupled or connected to control circuitry 503. Load 505 may correspond to any type of element referred to as a power receiver or consumer. As an example, load 505 is a rotating machine, such as an electric motor, a heating resistor, etc.

[0081] Control circuit 503 is designed, for example, to control the power supply from power source 501 to load 505. As an example, control circuit 503 is designed to authorize or block the supply of electrical power from power source 501 to load 505 according to the needs of the user of device 500.

[0082] As an example, the bidirectional thyristor device 400 is used in the following applications:

[0083] - Lighting control, such as controlling the brightness of incandescent lamps and dimmable LED lamps in street lighting, stage lighting and other types of commercial lighting systems;

[0084] - Heating control, such as controlling the temperature of heaters, ovens and other heating systems;

[0085] - Motor control, such as controlling the speed of AC motors in various industrial applications;

[0086] - Power supply, such as controlling the output voltage and current of an AC power supply system;

[0087] - In the medical field, bidirectional thyristor devices 400 are integrated, for example, into medical equipment (such as electrocautery equipment and defibrillators);

[0088] - In the field of home automation, bidirectional thyristor devices 400 are integrated into home automation systems to control various appliances, such as air conditioners, fans and refrigerators.

[0089] The advantage of the triac 400 is that it can be used to replace the triac 100 without modifying the electrical characteristics of its gate region 121. This allows for multiple variations of the device 500, for example, depending on the power of the load 505 to be powered, such as a so-called "low-power" version of the control circuit 503 using the triac 100 and a so-called "high-power" version of the triac 400, without modifying other components of the control circuit 503.

[0090] Device 500 may also include ​ Other elements and / or circuits represented by a single function block 507 (FCT).

[0091] Various embodiments and variations have been described. Those skilled in the art will understand that certain features of these various embodiments and variations can be combined, and other variations will occur to them. In particular, although...​ The example of a bidirectional thyristor device 400 having a rectangular overall shape is used, but the embodiment is not limited to this case and is more generally applicable to any bidirectional thyristor device shape, such as elliptical, circular, hexagonal, octagonal, etc. Finally, based on the functional indications given above, actual implementation of the described embodiments and variations is within the capabilities of those skilled in the art. In particular, the described embodiments are not limited to the specific examples of materials and dimensions mentioned in this disclosure.

Claims

1. A bidirectional thyristor device, characterized in that, The bidirectional thyristor device is formed inside and on top of a semiconductor substrate, and the bidirectional thyristor device includes: A first doped region on the first surface side of the substrate has a first conductivity type and is connected to a first conductive terminal of a bidirectional thyristor device. A second doped region on the second surface side of the substrate, opposite the first surface, has a first conductivity type and is connected to a second conductive terminal of a bidirectional thyristor device; and The gate region is connected to the control terminal of the bidirectional thyristor device. The first doped region and the second doped region have first and second parallel lateral surfaces, respectively. The bidirectional thyristor device includes a separation region between the first and second parallel lateral surfaces that is not covered by the first and second doped regions. The separation region has the shape of a strip that extends along a first direction inside the gate region and exhibits buckling outside the gate region.

2. The bidirectional thyristor device as claimed in claim 1, wherein the bidirectional thyristor device has a rectangular shape in a top view.

3. The bidirectional thyristor device of claim 2, wherein the first direction is inclined at an angle equal to 45° relative to one or more sides of the rectangle formed by the bidirectional thyristor device.

4. The bidirectional thyristor device of claim 2, wherein the separation region has a strip shape outside the gate region, the strip extending along a second direction parallel to the diagonal of the shape of the rectangle formed by the bidirectional thyristor device.

5. The bidirectional thyristor device of claim 2, wherein a short-circuit network is formed in each of the first and second doped regions, each short-circuit network comprising at least one through trench extending in a third direction within the gate region and exhibiting buckling outside the gate region.

6. The bidirectional thyristor device as claimed in claim 5, wherein the third direction is parallel to the first direction.

7. The bidirectional thyristor device as described in claim 5, wherein, Outside the gate region, each through trench extends along a fourth direction parallel to the diagonal of the rectangle formed by the bidirectional thyristor device.

8. The bidirectional thyristor device of claim 5, wherein each short-circuit network further includes a plurality of through vias.

9. The bidirectional thyristor device of claim 1, wherein the gate region has a square shape in a top view.

10. The bidirectional thyristor device of claim 1, wherein the semiconductor substrate is doped with a second conductivity type opposite to the first conductivity type, the first conductivity type and the second conductivity type being type N and type P, respectively.

11. An electronic device, characterized in that, The electronic device includes at least one bidirectional thyristor as described in claim 1.

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