Communication module and electronic equipment
By using a shared power amplifier and impedance matching network in the communication module, the problems of high cost and layout difficulty in traditional satellite communication terminals are solved, achieving component reduction and space saving, while ensuring the quality of radio frequency signals and the normal operation of satellite communication functions.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-24
- Publication Date
- 2026-03-13
AI Technical Summary
Traditional satellite communication terminals face challenges such as high cost, large layout area, and difficult layout when supporting multiple standards, especially due to the increased number of components and space occupied caused by the need for separate power amplifiers and filters for each standard.
A communication module design is adopted in which radio frequency chip components generate radio frequency signals of multiple frequency bands, and form a transmission path through a power amplifier, an impedance matching network and an antenna, which reduces the number of components and space occupation, and optimizes the state of the power amplifier through control signals to reduce power consumption.
It achieves the goal of reducing component costs and PCB layout area while supporting multiple satellite standards, reducing layout difficulty, and ensuring the quality of radio frequency signals and the normal operation of satellite communication functions.
Smart Images
Figure CN223993674U_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of communication equipment, and more particularly to a communication module and electronic device. Background Technology
[0002] With the development of electronic devices, more and more electronic devices have emerged. Some electronic devices have communication functions, possessing communication modules that enable communication. Communication methods can include satellite communication; electronic devices can connect to satellites through their internal communication modules, thereby achieving communication with satellites. Utility Model Content
[0003] This disclosure provides a communication module and an electronic device.
[0004] A first aspect of this disclosure provides a communication module, comprising: a radio frequency (RF) chip assembly for generating and outputting an RF signal in a target frequency band; wherein the target frequency band is any frequency band in which the RF signal generated by the RF chip assembly is located, and the RF signal includes a signal used for satellite communication; a power amplifier, the input terminal of which is connected to the output terminal of the RF chip assembly, for amplifying the RF signal in the target frequency band; an impedance matching network, connected to the output terminal of the power amplifier, for performing impedance matching to maximize the output power of the power amplifier; and an antenna, connected to the impedance matching network, for radiating the amplified RF signal in the target frequency band.
[0005] In one embodiment, the power amplifier includes: N input terminals; different input terminals are used to input radio frequency signals of different target frequency bands; the radio frequency chip assembly includes: N radio frequency chips; the output terminals of the radio frequency chips are connected to the input terminals of the power amplifier one-to-one; the radio frequency signals generated and output by different radio frequency chips are in different frequency bands; wherein, the Kth radio frequency chip among the N radio frequency chips is used to generate and output the radio frequency signal of the target frequency band; N≥2; 1≤K≤N.
[0006] In one embodiment, the power amplifier further includes: an amplifier body; a switch, with its two ends connected to the amplifier body and the input terminal respectively; wherein, when the Kth RF chip generates and outputs the RF signal of the target frequency band, the switch is in a target state that connects the amplifier body and the target input terminal; the target input terminal is: the input terminal of the power amplifier connected to the Kth RF chip.
[0007] In one embodiment, the power amplifier further includes: a controlled signal terminal connected to the Kth radio frequency chip, for receiving a first control signal from the Kth radio frequency chip; wherein the first control signal is used by the power amplifier to adjust the switch to the target state.
[0008] In one embodiment, the controlled signal terminal is further configured to receive a second control signal from the Kth radio frequency chip; the second control signal is configured to control the power amplifier to be in a first state; wherein, the power consumption of the power amplifier in the first state is less than the power consumption in the second state, and the second state is the state of the power amplifier when the switch is in a target state.
[0009] In one embodiment, the Kth radio frequency chip is determined based on a control signal issued by the controller of the device in which the communication module is located.
[0010] In one embodiment, the power amplifier includes an input terminal; the radio frequency chip assembly includes a radio frequency chip, the output terminal of which is connected to the input terminal of the power amplifier, for generating and outputting a radio frequency signal in the target frequency band.
[0011] In one embodiment, the radio frequency signal of the target frequency band is generated and output by the radio frequency chip according to the control signal issued by the controller of the device where the communication module is located.
[0012] In one embodiment, the communication module further includes a filtering component, the input of which is connected to the output of the radio frequency chip component, and the output of which is connected to the input of the power amplifier.
[0013] A second aspect of this disclosure provides an electronic device, including: the communication module described in any of the above embodiments.
[0014] The technical solutions provided by the embodiments of this disclosure may include the following beneficial effects:
[0015] The communication components in this scheme include an RF chip assembly, a power amplifier, an impedance matching network, and an antenna. The RF chip assembly generates and outputs RF signals in the target frequency band, which can be any frequency band within the range of RF signals that the RF chip assembly can generate. RF signals include those used for satellite communication. The input of the power amplifier is connected to the output of the RF chip assembly to amplify the RF signals in the target frequency band. The impedance matching network performs impedance matching, and the antenna is connected to the impedance matching network to radiate the amplified RF signals in the target frequency band.
[0016] In this scheme, all RF signals output from the RF chip assembly in the target frequency band are amplified by the same power amplifier, impedance matched by the same impedance matching network, and radiated through the same antenna. The RF chip assembly, power amplifier, impedance matching network, and antenna form a single transmission path. This reduces the number of transmission paths, eliminating the need for separate power amplifiers, impedance matching networks, and antennas for each target frequency band. This reduces the number of components, the space occupied, the cost, and the layout complexity between the components.
[0017] At the same time, the power amplifier and impedance matching network can reduce the impact on the quality of radio frequency signals and ensure normal satellite communication functions.
[0018] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and are not intended to limit this disclosure. Attached Figure Description
[0019] The accompanying drawings, which are incorporated in and form a part of this specification, illustrate embodiments consistent with this disclosure and, together with the description, serve to explain the principles of this disclosure.
[0020] Figure 1 This is a schematic diagram illustrating a communication module according to an exemplary embodiment;
[0021] Figure 2 This is a schematic diagram of an impedance matching network according to an exemplary embodiment. Detailed Implementation
[0022] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numerals in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this disclosure. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this disclosure as detailed in the appended claims.
[0023] With the rapid development of satellite internet technology, the new interconnection model of mobile phones directly connecting to satellites has gradually become a focus of attention. Traditional satellite communication operators, emerging satellite communication operators, terrestrial mobile operators, satellite manufacturers, mobile phone manufacturers, and general users are all attracted by this new scenario that may change the future of the satellite communication industry. Mobile phones and other terminals can not only connect to cellular networks, but also connect directly to satellite networks. This not only meets the communication needs of specific industries, but also provides more choices for ordinary users.
[0024] The technical solution for direct satellite connection between mobile phones is as follows:
[0025] One method is a direct connection mode based on a dedicated mobile phone. This mode achieves satellite communication through a customized dedicated satellite handheld terminal. In this mode, the dedicated satellite handheld terminal uses a dedicated satellite communication frequency band, connects to a gateway station via satellite, and then accesses the terrestrial public network to achieve communication functions. The dedicated communication protocol and frequency band require a customized mobile phone terminal.
[0026] The second is the universal mobile phone direct connection mode. This mode is based on existing standard mobile communication protocols such as 3GPP. By constructing a new communication satellite constellation, it enables direct communication between a universal mobile phone and a satellite, meaning the satellite is modified without changing the phone. In this scenario, the mobile phone connects directly to the satellite without modification. All technical issues need to be resolved on the satellite, which can serve as a mobile base station in space. The advantage of this technology is that it requires minimal modification to the terminal, allowing the mobile phone to connect to the satellite. The challenge lies in the fact that the satellite needs to be equipped with a high-power transmitter, a high-gain antenna, and a software stack compatible with 3GPP standards, resulting in high manufacturing, launch, and maintenance costs. Furthermore, there are difficulties in using terrestrial mobile communication spectrum for the satellite.
[0027] Thirdly, it leverages the terminal's built-in satellite communication chip to achieve dual connectivity between the terminal and both satellites and operator base stations. In this mode, terrestrial mobile communication and satellite communication are relatively independent, with communication with terrestrial base stations or satellites achieved through mode switching. The advantage of this technology lies in utilizing existing communication constellations and satellite communication protocols, allowing for faster terminal upgrades. The challenge lies in the miniaturization and low-power design of the antenna and power amplifier chips.
[0028] Fourth, based on the non-terrestrial network (NTN) technology roadmap of the International Organization for Standardization's 3GPP (3rd Generation Partnership Project), new communication chips and terminals are designed to enable direct communication between mobile phones and satellites, i.e., this standard is modified. It adopts a unified air interface, enabling terminals to simultaneously access both satellite and terrestrial wireless networks through collaboration between satellite and terrestrial networks, achieving seamless global three-dimensional network coverage. This means that future terminal devices conforming to this standard will be able to simultaneously access both satellite and terrestrial wireless networks. The advantage of this model lies in its high level of industry chain support; the challenge lies in tackling key technological challenges such as collaborative networking, protocol enhancement, and terminal compatibility.
[0029] Satellite communication terminals typically use parallel, single-band transmission paths. Different satellite standards employ different power amplifiers, bandpass filters, and RF transceiver chips, thus creating different transmission paths.
[0030] The parallel single-mode transmission path design has the following main shortcomings:
[0031] 1) High cost: When a satellite terminal needs to support multiple satellite communication standards, the use of a single frequency band power amplifier and filter for each standard will increase the number of components and increase the cost.
[0032] 2) Large layout area: Each standard uses a single-band power amplifier and filter, which greatly increases the PCB layout area.
[0033] 3) Increased PCB layout difficulty: For other components, adding a power amplifier is equivalent to adding a heat source, which not only increases the power consumption of the entire system, but also requires keeping components such as crystal oscillators away from heat sources, increasing the layout difficulty.
[0034] refer to Figure 1 This is a schematic diagram of a communication module, which includes:
[0035] Radio frequency chip component 1 is used to generate and output radio frequency signals in a target frequency band; wherein, the target frequency band is any frequency band in which the radio frequency signals generated by the radio frequency chip component are located, and the radio frequency signals include signals used for satellite communication.
[0036] Power amplifier 2, the input of which is connected to the output of the RF chip assembly, is used to amplify the RF signal in the target frequency band.
[0037] Impedance matching network 3 is connected to the output terminal of power amplifier 2 to perform impedance matching and maximize the output power of power amplifier 2.
[0038] Antenna 4 is connected to impedance matching network 3 to radiate the amplified radio frequency signal of the target frequency band.
[0039] The radio frequency chip assembly 1 is a device for generating and transmitting radio frequency signals. The radio frequency chip assembly 1 may include at least one radio frequency chip for generating radio frequency signals in multiple frequency bands.
[0040] Radio frequency (RF) chip component 1 is used for communication between electronic devices and WeChat. The RF signals generated and transmitted by RF chip component 1 are RF signals used for satellite communication. The RF signals output by RF chip component 1 are satellite-dedicated communication frequency bands used by electronic devices for satellite communication.
[0041] The model and quantity of RF chips in RF chip assembly 1 can be determined according to business needs, and are not limited here.
[0042] The frequency band in which the radio frequency signal output by the radio frequency chip component 1 is located is denoted as the target frequency band. The target frequency band can be any frequency band in which the radio frequency signal generated and output by the radio frequency chip component 1 is located. The target frequency band can be determined according to the communication service requirements. Among the radio frequency signals of multiple frequency bands generated by the radio frequency chip component 1, the radio frequency signal of each frequency band can be used as the radio frequency signal of the target frequency band.
[0043] Each frequency band can include multiple radio frequency signals of different frequencies, and radio frequency signals belonging to the same frequency band can be used as radio frequency signals within the same target frequency band.
[0044] For example, radio frequency signals in different target frequency bands are matched with different operators, and each operator has its own radio frequency signal frequency band used for satellite communication. This distinguishes the satellite communication frequency bands of different operators, thereby facilitating satellite communication. Satellite communication frequency bands are different from the frequency bands used for mobile communication signals.
[0045] For example, the radio frequency chip component 1 can be a radio frequency transmitter chip component or a radio frequency transceiver chip component.
[0046] The input terminal of power amplifier 2 is connected to the output terminal of RF chip assembly 1. The RF signal of the target frequency band output by RF chip assembly 1 enters power amplifier 2, which amplifies the RF signal of the target frequency band, thereby increasing the transmission power of the RF signal of the target frequency band. Power amplifier 2 outputs the amplified RF signal to impedance matching network 3 through its output terminal.
[0047] Power amplifier 2 can process radio frequency signals of different target frequency bands, and is compatible with the radio frequency signals of various frequency bands output by radio frequency chip component 1, serving as a common power amplifier for radio frequency signals of different frequency bands output by radio frequency chip component 1.
[0048] The model and internal circuit structure of the power amplifier are not limited, as long as it can amplify the RF signals of various frequency bands output by the RF chip components.
[0049] For example, power amplifier 2 may be a power amplifier specifically designed to amplify radio frequency signals for satellite communications.
[0050] Impedance matching network 3 is connected to the output terminal of power amplifier 2 to perform impedance matching and maximize the output power of power amplifier 2.
[0051] Impedance matching network 3 is a general-purpose impedance matching network.
[0052] After amplification, radio frequency (RF) signals from different target frequency bands can all pass through the same impedance matching network 3. This impedance matching network 3 can process the harmonics of the amplified RF signals from different target frequency bands, thereby reducing the harmonics of the target frequency band RF signals. This impedance matching network 3 can also increase the output power of the power amplifier 2, keeping the amplified target frequency band RF signals output by the power amplifier 2 at the load pull point of the power amplifier 2, thus maximizing the output power of the power amplifier 2. Simultaneously, it can also reduce the insertion loss of RF signals from different target frequency bands.
[0053] In one embodiment, the impedance matching network 3 includes at least a capacitor and an inductor, and may also include a resistor. The structure of the impedance matching network 3 can be adjusted as needed.
[0054] For example, the impedance matching network may include an impedance matching network formed by resistor-inductor (RL), an impedance matching network formed by inductor-capacitor (LC), or an impedance matching network formed by resistor-capacitor-inductor (RCL).
[0055] Antenna 4 is used to radiate the amplified radio frequency signal of the target frequency band.
[0056] For example, antenna 4 is also an antenna specifically designed for satellite communications, that is, specifically designed to radiate radio frequency signals for satellite communications.
[0057] In this scheme, the RF signal output from the RF chip component 1 for any target frequency band is amplified by the same power amplifier, then impedance matched by the same impedance matching network, and finally radiated through the same antenna. The RF chip component, power amplifier, impedance matching network, and antenna form a single transmission path. This reduces the number of transmission paths, eliminating the need for separate power amplifiers, impedance matching networks, and antennas for each target frequency band, thus reducing the number of components, the space occupied, the cost, and the layout complexity between the components.
[0058] At the same time, the power amplifier and impedance matching network can reduce the impact on the quality of radio frequency signals and ensure normal satellite communication functions.
[0059] In one embodiment, reference Figure 2 This is a schematic diagram of an impedance matching network. Impedance matching network 3 includes:
[0060] The first capacitor C1, the second capacitor C2, the first inductor L1, the second inductor L2, the third capacitor C3, and the third inductor L3.
[0061] The second capacitor C2 is connected in series with the first inductor L1. One end of the first capacitor C1 is connected in parallel with the series-connected second capacitor C2 and the first inductor L1, and the ends of the first capacitor C1 and the second capacitor C2 away from the first inductor L1 are connected together; the other end of the first capacitor C1 is grounded. One end of the second inductor L2 is connected in parallel with the series-connected second capacitor C2 and the first inductor L1, and the ends of the second inductor L2 and the first inductor L1 away from the second capacitor C2 are connected together; the other end of the second inductor L2 is grounded. The third capacitor C3 is connected in series with the third inductor L3, and the end of the third capacitor C3 away from the third inductor L3 is connected between the second capacitor C2 and the first inductor L1; the end of the third inductor L3 away from the third capacitor C3 is grounded. The end of the first capacitor C1 connected to the second capacitor C2 is connected to the antenna 4, and the end of the third inductor L3 connected to the first inductor L1 is connected to the output terminal of the power amplifier 2.
[0062] Figure 2 In the circuit shown, the positions of some capacitors and inductors can be interchanged, and additional resistors can be added.
[0063] In one embodiment, the radio frequency (RF) chip assembly includes N RF chips; the output terminals of the N RF chips are respectively connected to the input terminals of the power amplifier 2. The output terminals of the N RF chips can be connected to the same input terminal of the power amplifier 2 or to different input terminals of the power amplifier 2.
[0064] In one embodiment, the power amplifier 2 includes: N input terminals; different input terminals are used to input radio frequency signals of different target frequency bands.
[0065] The radio frequency chip assembly includes: N radio frequency chips; the output terminals of the radio frequency chips are connected one-to-one with the input terminals of the power amplifier 2; the radio frequency signals generated and output by different radio frequency chips are in different frequency bands.
[0066] Among them, the Kth RF chip out of the N RF chips is used to generate and output the RF signal of the target frequency band; N≥2; 1≤K≤N.
[0067] In this embodiment, the power amplifier 2 has N input terminals, and the radio frequency chip assembly 1 includes N radio frequency chips. Each input terminal of the power amplifier 2 can be connected to one of the radio frequency chips in the radio frequency chip assembly 1, and there is a one-to-one connection between the input terminals of the power amplifier 2 and the radio frequency chips, with one radio frequency chip connected to one input terminal of the power amplifier 2.
[0068] In the radio frequency chip assembly 1, different radio frequency chips generate and output radio frequency signals in different frequency bands, and each radio frequency chip can correspond to a different operator.
[0069] For example, the radio frequency chip can be a radio frequency transmitter chip or a radio frequency transceiver chip.
[0070] In the case where the RF chip assembly 1 includes multiple RF chips, one of the multiple RF chips will generate and output an RF signal in the target frequency band, and the multiple RF chips will not output RF signals simultaneously.
[0071] For example, if the Kth RF chip out of N RF chips generates the RF signal that the Kth RF chip can generate, and outputs the generated RF signal, then the frequency band in which the RF signal output by the Kth RF chip is located is the target frequency band. K can be any number in N, i.e., 1 ≤ K ≤ N. Each RF chip can serve as an RF chip that outputs the RF signal of the target frequency band.
[0072] refer to Figure 1 This illustrates a scenario where the RF chip assembly 1 includes three RF chips, i.e., N equals 3. The RF chip assembly 1 includes RF transceiver chip RF1 (the first RF chip), RF transceiver chip RF2 (the second RF chip), and RF transceiver chip RF3 (the third RF chip). The frequency bands in which RF transceiver chip RF1 can generate and output RF signals, RF transceiver chip RF2 can generate and output RF signals, and RF transceiver chip RF3 can generate and output RF signals are different.
[0073] When RF transceiver chip RF1 generates and outputs RF signals, the RF signal in the target frequency band is the RF signal generated and output by RF transceiver chip RF1. Similarly, when RF transceiver chip RF2 generates and outputs RF signals, the RF signal in the target frequency band is the RF signal generated and output by RF transceiver chip RF2. Likewise, when RF transceiver chip RF3 generates and outputs RF signals, the RF signal in the target frequency band is the RF signal generated and output by RF transceiver chip RF3.
[0074] Power amplifier 2 includes three input terminals, such as a first input terminal (e.g., Com1), a second input terminal (e.g., Com2), and a third input terminal (e.g., Com3). RF transceiver chip RF1 is connected to the first input terminal, RF transceiver chip RF2 is connected to the second input terminal, and RF transceiver chip RF3 is connected to the third input terminal. The one-to-one connection between the input terminals of power amplifier 2 and the RF chips is not limited to this and can be adjusted; for example, RF transceiver chip RF1 can be connected to the second input terminal, and RF transceiver chip RF2 can be connected to the first input terminal, etc.
[0075] The first input terminal is used to input the radio frequency signal output by the radio frequency transceiver chip RF1, the second input terminal is used to input the radio frequency signal output by the radio frequency transceiver chip RF2, and the third input terminal is used to input the radio frequency signal output by the radio frequency transceiver chip RF3.
[0076] This scheme enables the RF chip assembly 1 to output a target frequency band RF signal to the power amplifier 2 when the RF chip assembly 1 includes multiple RF chips.
[0077] In one embodiment, reference Figure 1 Power amplifier 2 also includes:
[0078] Amplifier body 201;
[0079] Switch 202 has its two ends connected to amplifier body 201 and input terminal, respectively.
[0080] Specifically, when the Kth RF chip generates and outputs an RF signal in the target frequency band, switch 202 is in the target state, connecting amplifier body 201 and the target input terminal. The target input terminal is the input terminal in power amplifier 2 that is connected to the Kth RF chip.
[0081] The amplifier body, as the main part of the power amplifier 2, performs signal amplification. Switch 202 is a component that connects the input terminals of the power amplifier 2 with the amplifier body 201. Through switch 202, the target input terminal among the multiple input terminals of the power amplifier 2 can be connected to the amplifier body 201, while the other input terminals are disconnected from the amplifier body 201.
[0082] Switch 202 can be a controlled switch, such as a switch formed by a MOSFET, or a single-pole multi-throw switch.
[0083] The solution in this embodiment allows the RF chip that outputs the RF signal of the target frequency band to be connected to the amplifier body 201 through its corresponding input terminal, thereby facilitating the amplifier body 201 to amplify the RF signal of the target frequency band. This also reduces the problem of interference to the RF signal of the target frequency band caused by the input terminals of the power amplifiers corresponding to each RF chip being connected to the amplifier body 201.
[0084] In one embodiment, reference Figure 1 Power amplifier 2 also includes:
[0085] The controlled signal terminal 203 is connected to the Kth RF chip and is used to receive the first control signal from the Kth RF chip; wherein, the first control signal is used by the power amplifier 2 to adjust the switch 202 to the target state.
[0086] The controlled signal terminal 203 serves as another input port of the power amplifier 2, used to input a control signal that controls the state of switch 202. In this embodiment, this control signal is referred to as the first control signal.
[0087] Since switch 202 is connected to the input terminal, and the RF chip is also connected to the input terminal, the RF chip connected to the amplifier body 201 can be controlled by switch 202.
[0088] For example, the first control signal may be issued by the Kth radio frequency chip or by the controller of the electronic device.
[0089] In one embodiment, the controlled signal terminal of the power amplifier 2 is also used to receive a second control signal from the Kth radio frequency chip; the second control signal is used to control the power amplifier to be in a first state.
[0090] In the first state, the power consumption of power amplifier 2 is less than that in the second state. The second state is the state of power amplifier 2 when the switch is in the target state.
[0091] In the second state, power amplifier 2 amplifies the radio frequency signal in the target frequency band, but power consumption is relatively high. In the first state, power amplifier 2 does not need to amplify the radio frequency signal in the target frequency band, so power consumption is lower than in the second state. This reduces the power consumption of power amplifier 2.
[0092] For example, the first state is a non-target state of the switch, such as when switch 202 is disconnected from all input terminals of power amplifier 2; it can also be a power-off state.
[0093] For example, the second control signal may be emitted by the radio frequency chip component 1 or by the controller of the electronic device.
[0094] For example, the Kth RF chip is determined based on the control signal issued by the controller of the device in which the communication module is located.
[0095] In one embodiment, the power amplifier 2 has one controlled signal terminal 203. In this case, the controlled signal terminal 203 can receive a first control signal and a second control signal.
[0096] In one embodiment, the power amplifier 2 has multiple controlled signal terminals 203, such as two, including a first controlled signal terminal and a second controlled signal terminal. Figure 1 As shown, the first controlled signal terminal can be designated as the port receiving the control signal PA_C0, and the second controlled signal terminal can be designated as the port receiving the control signal PA_C1. In this case, the first and second control signals are input together through both controlled signal terminals.
[0097] As shown in the table below:
[0098]
[0099] f1, f2, and f3 represent different target frequency bands, that is, when the RF chip assembly 1 includes multiple RF chips, the frequency bands in which the RF signals output by different RF chips are located. When different RF chips output RF signals corresponding to the target frequency bands, they also output a first control signal.
[0100] For example, f1 represents the target frequency band of the RF signal output by RF transceiver chip RF1, f2 represents the target frequency band of the RF signal output by RF transceiver chip RF1, and f3 represents the target frequency band of the RF signal output by RF transceiver chip RF1. When representing the RF signal output by RF transceiver chip RF1 in frequency band f1, RF1 will also output a first control signal, such as control signal PA_C0 and control signal PA_C1. The control signals PA_C0 and PA_C1 can be represented in the corresponding forms in the table above; for example, control signal PA_C0 is represented as 0, and control signal PA_C1 is represented as 1.
[0101] When representing the RF signal output by the RF transceiver chip RF2 in the f2 frequency band, the RF transceiver chip RF2 will also output a first control signal, such as control signal PA_C0 and control signal PA_C1. The control signals PA_C0 and PA_C1 can be referred to the corresponding representations in the table above, such as control signal PA_C0 being represented as 1 and control signal PA_C1 being represented as 0.
[0102] When the RF transceiver chip RF3 outputs an RF signal in the f3 frequency band, the RF transceiver chip RF1 will also output a first control signal, such as control signal PA_C0 and control signal PA_C1. The control signals PA_C0 and PA_C1 can be represented in the corresponding forms in the table above; for example, control signal PA_C0 is represented as 1, and control signal PA_C1 is represented as 1.
[0103] Different RF chips output different first control signals, so that when the Kth RF chip outputs the RF signal of the target frequency band, the input terminal connected to the Kth RF chip can be connected to the power amplifier body 201.
[0104] In one embodiment, the second control signal may also include control signal PA_C0 and control signal PA_C1, wherein control signal PA_C0 is in the form of 0 and control signal PA_C1 is in the form of 0.
[0105] In one embodiment, the power amplifier 2 includes an input terminal.
[0106] The radio frequency chip assembly 1 includes: a radio frequency chip, the output terminal of which is connected to the input terminal of the power amplifier 2, for generating and outputting radio frequency signals in the target frequency band.
[0107] In this embodiment, the radio frequency chip assembly 1 includes a general-purpose radio frequency chip that can generate and output multiple radio frequency signals of different frequency bands. This eliminates the need for multiple radio frequency chips in the radio frequency chip assembly 1 to generate and output different frequency signals, thereby reducing the number of radio frequency chips in the assembly and consequently reducing the size and space occupied by the assembly.
[0108] In one embodiment, when the radio frequency chip assembly 1 includes a general-purpose radio frequency chip, the radio frequency signal of the target frequency band is generated and output by the radio frequency chip according to the control signal issued by the controller of the device where the communication module is located.
[0109] In one embodiment, the communication module further includes:
[0110] The input terminal of filter component 5 is connected to the output terminal of RF chip component 1, and the output terminal of filter component 5 is connected to the input terminal of power amplifier 2.
[0111] The filtering component 5 is used to filter the radio frequency signal in the target frequency band, thereby improving the signal quality.
[0112] For example, filtering component 5 may include a filter.
[0113] For example, when the RF chip assembly 1 includes multiple RF chips, the output terminal of each RF chip is connected to a filter component. Different RF chips are connected to different filter components, and different filter components filter RF signals in different frequency bands. The filter is matched with the target frequency band, and the filter connected to the RF chip is used to filter signals outside the target frequency band.
[0114] refer to Figure 1 The filtering component 5 includes three filters: filter SAW1, filter SAW2, and filter SAW3. The input of filter SAW1 is connected to the output of RF transceiver chip RF1, the input of filter SAW2 is connected to the output of RF transceiver chip RF2, and the input of filter SAW3 is connected to the output of RF transceiver chip RF3.
[0115] The output of filter SAW1 is connected to the input of power amplifier 2 (Com1), the output of filter SAW2 is connected to the input of power amplifier 2 (Com2), and the output of filter SAW3 is connected to the input of power amplifier 2 (Com3).
[0116] The connection here can include a coupling connection or a line connection.
[0117] In one embodiment, an electronic device is also provided, comprising:
[0118] The communication module in any of the above embodiments.
[0119] Electronic devices are devices that support satellite communication, such as handheld satellite communication terminals, including mobile phones, laptops, etc., and may also include wearable devices, such as watches, wristbands, and glasses.
[0120] In one embodiment, the electronic device may further include a controller connected to the radio frequency chip component in the communication module, for controlling the radio frequency chip component to output radio frequency signals in the target frequency band.
[0121] In one embodiment, a communication module is also provided, as shown in the reference. Figure 1 .
[0122] Antenna 4 is a transmitting antenna used to radiate radio frequency signals.
[0123] Impedance matching network 3 includes components such as capacitors and inductors to adjust the impedance to achieve a matched state, thereby improving energy efficiency and ensuring that the signal can be transmitted efficiently to the load point. This impedance matching network 3 can not only meet the second harmonic requirements of different satellite systems, but also ensure that the RF signals of the three different satellite systems are transmitted as close as possible to the load pull point of the PA after being output from the power amplifier (PA) output port, thus minimizing transmission loss.
[0124] Through this impedance matching network 3, a second harmonic suppression degree of at least 20dB can be achieved for frequency band f1; a second harmonic suppression degree of at least 15dB can be achieved for frequency band f2; a second harmonic suppression degree of at least 15dB can be achieved for frequency band f3; and the insertion loss of the path for frequency bands f1, f2, and f3 is guaranteed to be within 0.5dB.
[0125] The PA is a three-in-one power amplifier module used to amplify incoming radio frequency signals to meet transmission power requirements. Through internal input / output matching network optimization, it achieves signal amplification within the three frequency ranges (f1, f2, and f3) required for satellite communication. The PA utilizes a Wilkinson line configuration to achieve high-power output of satellite communication signals. A balanced design between PA efficiency and nonlinearity ensures that the PA's linearity meets requirements. Com1, Com2, and Com3 are the three radio frequency signal input ports of the PA, and a single-pole triple-throw switch within the PA allows for switching between the inputs of three different satellite signal standards.
[0126] SAW1, SAW2, and SAW3 are bandpass filters for different satellite standards and corresponding frequency bands. They are used to select frequencies that meet the frequency band requirements to pass through, reducing interference from out-of-band signals in the radio frequency path.
[0127] RF1, RF2, and RF3 are three different satellite standard radio frequency transceiver chips used to output radio frequency signals.
[0128] The first input port Com1 of PA is coupled to the output port of SAW1, and the input port of SAW1 is coupled to the output port of RF1, which is used for the transmission of radio frequency signals of satellite system 1.
[0129] The second input port Com2 of PA is coupled to the output port of SAW2, and the input port of SAW2 is coupled to the output port of RF2, which is used for the transmission of radio frequency signals of satellite system 2.
[0130] The input port Com3 of PA is coupled to the output port of SAW2, and the input port of SAW3 is coupled to the output port of RF3, which is used for the transmission of radio frequency signals of satellite system 3;
[0131] The control process is as follows:
[0132] When a user wants to use satellite standard 1 for satellite communication, the RF transceiver chip RF1 outputs the RF1 radio frequency signal, which passes through a bandpass filter that only supports the RF1 band and enters the power amplifier. At the same time, the RF transceiver chip RF1 controls the state of PA_C0 / PA_C1 to switch PA to the mode that supports satellite standard 1, thereby amplifying the RF1 signal. After passing through the matching network to optimize spurious emissions and path insertion loss, the signal is switched to the antenna and transmitted as a radio frequency signal.
[0133] When a user wants to use satellite standard 2 for satellite communication, the RF transceiver chip RF2 outputs the RF2 radio frequency signal, which passes through a bandpass filter that only supports the RF2 frequency band and enters the power amplifier. At the same time, the RF transceiver chip RF2 controls the state of PA_C0 / PA_C1 to switch PA to the mode that supports satellite standard 2, thereby amplifying the RF2 signal. After passing through the matching network to optimize spurious emissions and path insertion loss, the signal is switched by a switch and reaches the antenna to realize the transmission of the radio frequency signal.
[0134] When a user wants to use satellite standard 3 for satellite communication, the RF transceiver chip RF3 outputs an RF3 radio frequency signal, which passes through a bandpass filter that only supports the RF3 band and enters the power amplifier. At the same time, the RF transceiver chip RF3 controls the state of PA_C0 / PA_C1 to switch PA to a mode that supports satellite standard 3, thereby amplifying the RF3 signal. After passing through a matching network to optimize spurious signals and path insertion loss, the signal is switched to the antenna and transmitted as a radio frequency signal.
[0135] This solution addresses the challenge of integrating multiple satellite communication standards into a single terminal in current direct-connect satellite communication scenarios. By employing a three-in-one PA module, the back-end paths of the PA are integrated into a single transmission path. This reduces component costs and quantity, saves PCB layout area, and ensures normal satellite communication functionality without sacrificing performance.
[0136] The selected three-in-one PA module suffers from excessive second harmonic distortion (DHD) at the output due to the significant bandwidth differences and high power across the three frequency bands (f1, f2, and f3) of satellite communication. This paper presents an impedance matching network that optimizes the second harmonic distortion of all three frequency bands (f1, f2, and f3) for satellite communication. This network satisfies the harmonic requirements of different satellite standards while ensuring adequate transmission loss.
[0137] It has the following advantages:
[0138] Cost reduction: The above solution saves two PAs and two switches, thus saving certain costs; PCB layout area reduction: By saving two PAs and two RF switches, the PCB layout area of the transmission path is reduced by about 30% to 40% compared to the three different standards; Reduced PCB layout difficulty: Power consumption is optimized and two heat sources are reduced, thus reducing the layout difficulty of heat-sensitive components such as crystal oscillators.
[0139] Other embodiments of this disclosure will readily occur to those skilled in the art upon consideration of the specification and practice of the utility models disclosed herein. This application is intended to cover any variations, uses, or adaptations of this disclosure that follow the general principles of this disclosure and include common knowledge or customary techniques in the art not disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of this disclosure are indicated by the claims.
[0140] It should be understood that this disclosure is not limited to the precise structures described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The scope of this disclosure is limited only by the appended claims.
Claims
1. A communication module, characterized in that, The communication module comprises: a radio frequency chip assembly for generating and outputting a radio frequency signal of a target frequency band; wherein the target frequency band is any one of the frequency bands of the radio frequency signals that the radio frequency chip assembly can generate, and the radio frequency signal comprises a signal for satellite communication; a power amplifier, an input end of the power amplifier being connected with an output end of the radio frequency chip assembly, for amplifying the radio frequency signal of the target frequency band; an impedance matching network connected with an output end of the power amplifier, for impedance matching to maximize the output power of the power amplifier; an antenna connected with the impedance matching network, for radiating the amplified radio frequency signal of the target frequency band.
2. The communication module according to claim 1, wherein: the power amplifier comprises N input ends, and different input ends are used for inputting radio frequency signals of different target frequency bands; the radio frequency chip assembly comprises N radio frequency chips, and the output ends of the radio frequency chips are connected with the input ends of the power amplifier one by one; and radio frequency signals generated and outputted by different radio frequency chips are in different frequency bands; wherein the Kth radio frequency chip in the N radio frequency chips is used for generating and outputting a radio frequency signal of the target frequency band; N≥2; 1≤K≤N.
3. The communication module of claim 2, wherein, The power amplifier further comprises: an amplifier body; a switch, two ends of the switch being connected with the amplifier body and the input end respectively; wherein when the Kth radio frequency chip generates and outputs the radio frequency signal of the target frequency band, the switch is in a target state of connecting the amplifier body and a target input end; and the target input end is an input end in the power amplifier connected with the Kth radio frequency chip.
4. The communication module of claim 3, wherein, The power amplifier further comprises: a controlled signal end connected with the Kth radio frequency chip, for receiving a first control signal of the Kth radio frequency chip; wherein the first control signal is used for adjusting the switch to the target state by the power amplifier.
5. The communication module according to claim 4, wherein: the controlled signal end is further used for receiving a second control signal of the Kth radio frequency chip; and the second control signal is used for controlling the power amplifier to be in a first state; wherein the power consumption of the power amplifier in the first state is less than that in a second state, and the second state is a state of the power amplifier when the switch is in the target state.
6. The communication module of claim 2, wherein, The Kth radio frequency chip is determined according to a control signal issued by a controller of a device where the communication module is located.
7. The communication module of claim 1, wherein, The power amplifier comprises one input end; the radio frequency chip assembly comprises one radio frequency chip, and the output end of the radio frequency chip is connected with the input end of the power amplifier, for generating and outputting a radio frequency signal of the target frequency band.
8. The communication module of claim 7, wherein, The radio frequency signal of the target frequency band is generated and outputted by the radio frequency chip according to a control signal issued by a controller of a device where the communication module is located.
9. The communication module of claim 1, wherein, The communication module further comprises: a filtering assembly, an input end of the filtering assembly being connected with an output end of the radio frequency chip assembly, and an output end of the filtering assembly being connected with an input end of the power amplifier.
10. An electronic device, comprising: The communication module of any one of claims 1 to 9.