Silicon wafer carrier

By designing a toothed structure for the silicon wafer carrier, the contact area between the silicon wafer and the toothed structure is reduced and the fluidity of the etching solution is enhanced, thus solving the problem of uneven etching of the silicon wafer and improving the photoelectric conversion efficiency of the solar cell.

CN224022214UActive Publication Date: 2026-03-20TONGWEI SOLAR (PENGSHAN) CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-03-18
Publication Date
2026-03-20

AI Technical Summary

Technical Problem

During the wet processing of solar cells, contact between the silicon wafer and the grommets leads to uneven etching, affecting photoelectric conversion efficiency.

Method used

A silicon wafer carrier is designed by setting a second structure on the teeth to narrow the sides inward, thereby reducing the contact area between the silicon wafer and the teeth, and by setting a hollow area between the teeth to improve the fluidity of the etching solution.

Benefits of technology

This effectively reduces the contact area between the silicon wafer and the toothed etchant, improves the uniformity of the etching solution flow, thereby ensuring the uniformity of silicon wafer etching and improving the performance of solar cells.

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Abstract

The utility model relates to the technical field of solar cell devices, and discloses a silicon wafer carrier, which comprises two opposite side plates, a plurality of silicon wafers and a plurality of silicon wafers, a plurality of insert rods, wherein any insert rod is arranged between the two side plates; the clamping teeth are arranged on the inserting piece rod at intervals in the length direction of the inserting piece rod, each clamping tooth comprises a first structure and a second structure which are connected with each other, the second structures are connected to the inserting piece rod, the first structures are used for making contact with silicon wafers, and the two sides of the second structures are narrowed inwards relative to the two sides of the first structures in the length direction of the inserting piece rod. The silicon wafer carrier can effectively reduce the contact area of the silicon wafer and the latches and improve the flowing uniformity of etching liquid, thereby being beneficial to ensuring the etching uniformity of the silicon wafer.
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Description

Technical Field

[0001] This utility model relates to the field of solar cell device technology, and in particular to a silicon wafer carrier. Background Technology

[0002] In the manufacturing process of solar cells, silicon wafers need to undergo wet processing. During wet processing, the silicon wafer carrier, which serves as the support for the silicon wafer, may experience jamming or adhesion between its teeth and the wafer. This makes it difficult for the wafer in that area to come into contact with the etching solution, resulting in poor etching uniformity and negatively impacting the photoelectric conversion efficiency of the solar cell. Utility Model Content

[0003] This utility model discloses a silicon wafer carrier that can effectively reduce the contact area between the silicon wafer and the etchant teeth, improve the uniformity of the etching solution flow, and thus help ensure the uniformity of silicon wafer etching.

[0004] This application discloses a silicon wafer carrier, which includes:

[0005] Two side panels positioned opposite each other;

[0006] A plurality of insert rods, wherein any one of the insert rods is disposed between two of the side plates;

[0007] A plurality of locking teeth are spaced apart on the insert rod along the length direction of the insert rod. Each locking tooth includes a first structure and a second structure that are connected to each other. The second structure is connected to the insert rod, and the first structure is used to contact the silicon wafer. Along the length direction of the insert rod, the two sides of the second structure are narrowed inward relative to the two sides of the first structure.

[0008] Furthermore, along the length direction of the insert rod, the minimum distance between the edges of two adjacent first structures is a, and the minimum distance between the edges of two adjacent second structures is b, wherein a and b satisfy: a:b = (13~15):(16~18).

[0009] Further, the value of b is 3.2 mm to 3.6 mm; and / or,

[0010] The value of 'a' is 2.6 mm to 3.0 mm.

[0011] Furthermore, the second structure has a through-hole area that extends through itself, the through-hole area being disposed along the length direction of the insert rod.

[0012] Furthermore, the second structure has a through-hole area that extends through itself, the through-hole area being disposed along the length direction of the insert rod.

[0013] Furthermore, the second structure has a cross-section perpendicular to the length direction of the insert rod, and the shape of the hollowed-out area corresponds to the shape of the cross-section of the second structure.

[0014] Furthermore, the second structure has a cross-section perpendicular to the length direction of the insert rod, the area of ​​the cross-section including the area of ​​the hollow region and the area of ​​the solid region outside the hollow region, and the ratio of the area of ​​the hollow region to the area of ​​the cross-section is 1:2 to 1:5.

[0015] Furthermore, the first structure has a contact portion for contacting the silicon wafer, the contact portion being a sharp corner or an arc-shaped portion.

[0016] Furthermore, along the height direction of the first structure, the minimum distance between the contact portion and the insert rod is 4.5mm to 5.5mm.

[0017] Furthermore, along the width direction of the silicon wafer carrier, the first structure has a projected shape, which is formed by a first side and a second side connected to opposite sides of the first side, wherein the first side is located away from the insertion rod.

[0018] The second side is used to contact the silicon wafer, and the connection between the first side and the second side is an arc-shaped structure.

[0019] Furthermore, along the length of the insert rod, the maximum width of the first structure is 2.5mm to 3.5mm; and / or,

[0020] The height of the locking teeth is 8.5mm to 9.5mm.

[0021] Compared with the prior art, the beneficial effects of this application include:

[0022] This application provides a silicon wafer carrier that can effectively reduce the contact area between the silicon wafer and the etchant teeth, improve the uniformity of the etching solution flow, and thus help ensure the uniformity of silicon wafer etching.

[0023] Specifically, in this application, the second structure of the toothed structure is connected to the insert rod, and the first structure connected to the second structure is used to contact the silicon wafer. This indicates that the contact point between the silicon wafer and the toothed structure is relatively high. Furthermore, the two sides of the second structure are respectively converging inwards relative to the two sides of the first structure, making the width of the first structure larger than the second structure. This significantly reduces the contact area between the silicon wafer and the second structure, improving the uniformity of silicon wafer etching. In addition, the above structural design results in a larger gap between the second structures. Therefore, when the silicon wafer is immersed in the etching solution for etching, the flow performance of the etching solution at the second structures is higher, helping to avoid etching solution accumulation and further improving the uniformity of silicon wafer etching. Attached Figure Description

[0024] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0025] Figure 1 This is a top view of a silicon wafer carrier provided in an embodiment of this application;

[0026] Figure 2 yes Figure 1 A magnified schematic diagram of the structure at point A in the center, viewed from the front view.

[0027] Figure 3 This is a schematic diagram of the application scenario of the silicon wafer carrier provided in the embodiments of this application (from the front view), wherein a) is a diagram of the silicon wafer in a vertical state, and b) is a diagram of the silicon wafer in a tilted state;

[0028] Figure 4 These are several modified structures of the clamping teeth in the silicon wafer carrier according to embodiments of this application (from the front view perspective), wherein a) is a schematic diagram of clamping teeth with regular shapes in the first and second structures, b) is a schematic diagram of clamping teeth with irregular shapes in the first structure and regular shapes in the second structure, c) is a schematic diagram of clamping teeth with regular shapes in the first structure and irregular shapes in the second structure, d) is a schematic diagram of a first type of clamping teeth with both irregular shapes in the first and second structures, and e) is a schematic diagram of a second type of clamping teeth with both irregular shapes in the first and second structures.

[0029] Figure 5 yes Figure 1 Enlarged schematic diagram of the structure at point A in the middle from the side view perspective;

[0030] Figure 6 This is a schematic diagram of the projected shape of a first structure along the width direction of a silicon wafer carrier provided in an embodiment of this application;

[0031] Figure 7 This is a schematic diagram of the projected shape of another first structure along the width direction of the silicon wafer carrier provided in the embodiments of this application.

[0032] Icons: 1. Side plate; 2. Insert rod; 3. Clamping tooth; 31. First structure; 311. First side; 312. Second side; 313. Connection; 31a. Contact part; 32. Second structure; 321. Hollow area; 322. Solid area; 4. Silicon wafer. Detailed Implementation

[0033] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0034] In this invention, the terms "upper," "lower," "left," "right," "front," "rear," "top," "bottom," "inner," "outer," "middle," "vertical," "horizontal," "lateral," and "longitudinal" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. These terms are primarily for the purpose of better describing this invention and its embodiments, and are not intended to limit the indicated device, element, or component to having a specific orientation, or to be constructed and operated in a specific orientation.

[0035] Furthermore, in addition to indicating direction or positional relationship, some of the aforementioned terms may also have other meanings. For example, the term "above" may also be used in some cases to indicate a certain dependency or connection relationship. Those skilled in the art can understand the specific meaning of these terms in this utility model according to the specific circumstances.

[0036] Furthermore, the terms "first," "second," etc., are primarily used to distinguish different devices, elements, or components (which may be the same or different in specific type and construction), and are not intended to indicate or imply the relative importance or quantity of the indicated devices, elements, or components. Unless otherwise stated, "a plurality of" means two or more.

[0037] The technical solution provided by this utility model will be further described below with reference to the embodiments and accompanying drawings.

[0038] Wet processing of solar cells is a cleaning process. In order to avoid the silicon wafers drifting or attaching during wet processing, silicon wafer carriers such as baskets are used to support the silicon wafers, thus avoiding the above problems and ensuring the effect of wet processing.

[0039] Specifically, the silicon wafer is inserted between two adjacent teeth to fix its position. However, because the silicon wafer is located between the two teeth, it will contact the teeth, making it difficult for the etching solution to act effectively on the contact area. This results in a lower etching amount in this area compared to other areas, leading to poor etching performance and affecting the performance of the solar cell. On the other hand, the etching solution between adjacent teeth has poor flow, resulting in a higher etching amount in this area compared to other areas and poor etching uniformity.

[0040] Based on the above problems, this application provides a silicon wafer carrier. Using this silicon wafer carrier can effectively reduce the contact area between the silicon wafer and the etchant teeth, improve the uniformity of the etching solution flow, and thus help ensure the uniformity of silicon wafer etching.

[0041] This application provides a silicon wafer carrier, such as... Figures 1 to 3 As shown, the silicon wafer carrier includes:

[0042] Two side panels 1 are set opposite to each other;

[0043] Several insert rods 2, any one of which is disposed between two side plates 1;

[0044] A plurality of retaining teeth 3 are spaced apart on the insert rod 2 along its length. Each retaining tooth 3 includes a first structure 31 and a second structure 32 connected to each other. The second structure 32 is connected to the insert rod 2, and the first structure 31 is used to contact the silicon wafer 4 along the length of the insert rod 2 (see [reference]). Figure 1 In the X direction), the two sides of the second structure 32 narrow inward relative to the two sides of the first structure 31.

[0045] Among them, combined Figure 2 As shown, along the length of the insert rod 2, the two sides of the second structure 32 narrow inward relative to the two sides of the first structure 31. That is to say, for any tooth, with the side of the first structure 31 as the reference, the side of the second structure 32 moves closer to the middle from both ends, so that the second structure 32 tends to narrow relative to the first structure 31, thereby making the maximum width of the second structure 32 less than the minimum width of the first structure 31.

[0046] This application provides a silicon wafer carrier in which the second structure 32 of the toothed 3 structure is connected to the insert rod 2, and the first structure 31 connected to the second structure 32 is used to contact the silicon wafer 4. This indicates that the contact point between the silicon wafer 4 and the toothed 3 is relatively high. By further setting the two sides of the second structure 32 to be inwardly contracted relative to the two sides of the first structure 31, the width of the first structure 31 is made larger than that of the second structure 32. Therefore, regardless of whether the silicon wafer 4 is in a vertical or inclined state, the contact area between the silicon wafer 4 and the second structure 32 can be reduced to a greater extent, thereby improving the uniformity of etching the silicon wafer 4. In addition, the above-mentioned structural arrangement results in a larger gap between two adjacent second structures 32. Therefore, when the silicon wafer 4 is placed in the etching solution for etching, the flow performance of the etching solution at the second structure 32 is high, which helps to avoid the accumulation of etching solution, thereby further improving the uniformity of etching the silicon wafer 4.

[0047] Furthermore, along the width direction of insert rod 2 (see...) Figure 1(in the Y direction), the projected shapes of the first structure 31 and the second structure 32 can be regular or irregular shapes. In a first optional embodiment, such as Figure 2 and Figure 4 As shown in a), both the first structure 31 and the second structure 32 are regular shapes; in the second optional embodiment, as... Figure 4 As shown in b) and c), one of the first structure 31 and the second structure 32 is an irregular shape, wherein the first structure 31 in b) is an irregular shape, and the second structure 32 in c) is an irregular shape; in the third optional embodiment, as Figure 4 As shown in d) and e), both the first structure 31 and the second structure 32 are irregular shapes. It is important to note that, regardless of whether the shapes are regular or irregular, the maximum width of the second structure 32 must be less than the minimum width of the first structure 31. This not only ensures good stability of the first structure 31 in fixing the silicon wafer 4, but also effectively reduces the contact area between the silicon wafer 4 and the grommets 3, thereby improving the uniformity of etching. For example, see reference [link to reference]. Figure 4 In the figure, the minimum width of the first structure 31 is L1, the maximum width of the second structure 32 is L2, and L2 is less than L1.

[0048] Further, see the return Figure 2 Along the length of the insert rod 2, the minimum distance between the edges of two adjacent first structures 31 is a, and the minimum distance between the edges of two adjacent second structures 32 is b. a and b satisfy: a:b=(13~15):(16~18).

[0049] When a and b satisfy the above ratio, it not only helps to prevent the silicon wafer 4 from shaking or shifting within the silicon wafer carrier, thereby improving the fixing effect of the first structure 31, but also creates space between the second structures 32 that is conducive to the flow of etching solution, thereby reducing the accumulation of etching solution and ensuring the uniformity of etching of the silicon wafer 4.

[0050] Among them, see references Figure 2 'a' refers to the minimum gap between two adjacent first structures 31, and 'b' refers to the minimum gap between adjacent second structures 32.

[0051] Furthermore, b is 3.2mm to 3.6mm, which is conducive to the flow of the etching solution and avoids the accumulation of the etching solution, thereby effectively ensuring the uniformity of etching of silicon wafer 4.

[0052] When a is 2.6mm to 3.0mm, it is beneficial to improve the stability of the silicon wafer 4 clamping. On the one hand, it helps to avoid stress concentration of the silicon wafer 4 during the clamping process, and on the other hand, it prevents the silicon wafer 4 from falling off the silicon wafer carrier, which helps to improve the stability and effectiveness of the fixation.

[0053] In addition, such as Figure 5 As shown, the second structure 32 has a through-hole area 321 that extends through itself, and the through-hole area 321 extends along the length of the insert rod 2. This design further reduces the contact area between the silicon wafer 4 and the retaining teeth 3, improves the fluidity of the etching solution, and thus helps to further ensure the uniformity of etching the silicon wafer 4, thereby improving the uniformity of etching.

[0054] Furthermore, the second structure 32 has a cross-section perpendicular to the length direction of the insert rod 2, and the shape of the hollowed-out area 321 corresponds to the shape of the cross-section of the second structure 32. When the shape of the hollowed-out area 321 corresponds to the shape of the cross-section, it is easier to process and can increase the area of ​​the hollowed-out area 321 to a greater extent, thereby improving the fluidity of the etching solution and ensuring the uniformity of etching.

[0055] The shape of the hollow area 321 corresponding to the shape of the cross-section of the second structure 32 means that the hollow area 321 is similar to the cross-sectional shape of the second structure 32. For example, when the second structure 32 is a trapezoidal structure, the hollow area 321 also presents a trapezoidal structure.

[0056] Additionally, see the return Figure 5 The second structure 32 has a cross-section perpendicular to the length direction of the insert rod 2. The area of ​​the cross-section includes the area of ​​the hollow area 321 and the area of ​​the solid area 322 located outside the hollow area 321. The ratio of the area of ​​the hollow area 321 to the area of ​​the cross-section is 1:2 to 1:5.

[0057] When the area ratio of the hollowed-out area 321 to the cross-section is within the above range, it can effectively reduce the contact area between the silicon wafer 4 and the tooth 3, improve the fluidity of the etching solution, and ensure that the second structure 32 has high structural strength.

[0058] In addition, such as Figure 6 and Figure 7 As shown, the first structure 31 has a contact portion 31a for contacting the silicon wafer 4, and the contact portion 31a is a sharp corner portion or an arc-shaped portion.

[0059] When the contact surface is a sharp corner or an arc-shaped portion, the contact area between the first structure 31 and the silicon wafer 4 is further reduced, ensuring the uniformity of etching and reducing liquid carryover issues. In particular, when the contact portion 31a is an arc-shaped portion, it not only reduces the contact area with the silicon wafer 4 but also avoids scratching the silicon wafer 4, thereby significantly improving the performance of the solar cell.

[0060] Further, see the return Figure 2 Along the height direction of the first structure 31 (see Figure 2In the Z direction), the minimum distance between the contact part 31a and the insert rod 2 is 4.5mm to 5.5mm.

[0061] When the minimum distance between the contact part 31a and the insert rod 2 is within the above range, the stability of the silicon wafer 4 can be effectively ensured, and problems such as the silicon wafer 4 shifting or falling off during the processing can be avoided.

[0062] Further, see the return Figure 7 Along the width direction of the silicon wafer carrier, the first structure 31 has a projected shape, which is composed of a first side 311 and a second side 312 connected to the opposite sides of the first side 311. The first side 311 is the side that is located away from the insert rod 2.

[0063] The second side 312 is used to contact the silicon wafer 4, and the connection 313 between the first side 311 and the second side 312 is an arc-shaped structure.

[0064] When the connection 313 between the first side 311 and the second side 312 is an arc-shaped structure, it helps to reduce the chance of scratches on the silicon wafer 4, thereby improving the performance of the solar cell.

[0065] Furthermore, along the length direction of the insert rod 2, the maximum width of the first structure 31 is 2.5mm to 3.5mm. When the maximum width of the first structure 31 is within the above range, it can effectively ensure that it has a good clamping effect and reduce the contact area between the clamping teeth 3 and the silicon wafer 4.

[0066] In addition, the height of the clamping tooth 3 is 8.5mm to 9.5mm. When the height of the clamping tooth 3 is within the above range, it is beneficial to ensure the stability of clamping and to avoid excessive contact area between the silicon wafer 4 and the clamping tooth 3, thereby ensuring the uniformity of etching.

[0067] The above provides a detailed description of a silicon wafer carrier disclosed in the embodiments of this application. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand a silicon wafer carrier. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the idea of ​​this utility model. Therefore, the content of this specification should not be construed as a limitation of this utility model.

Claims

1. A silicon wafer carrier, characterized in that, The silicon wafer carrier includes: Two side panels positioned opposite each other; A plurality of insert rods, wherein any one of the insert rods is disposed between two of the side plates; A plurality of locking teeth are spaced apart on the insert rod along the length direction of the insert rod. Each locking tooth includes a first structure and a second structure that are connected to each other. The second structure is connected to the insert rod, and the first structure is used to contact the silicon wafer. Along the length direction of the insert rod, the two sides of the second structure are narrowed inward relative to the two sides of the first structure.

2. The silicon wafer carrier according to claim 1, characterized in that, Along the length direction of the insert rod, the minimum distance between the edges of two adjacent first structures is a, and the minimum distance between the edges of two adjacent second structures is b. a and b satisfy: a:b = (13~15):(16~18).

3. The silicon wafer carrier according to claim 2, characterized in that, The value of b is 3.2 mm to 3.6 mm; and / or, The value of 'a' is 2.6 mm to 3.0 mm.

4. The silicon wafer carrier according to claim 1, characterized in that, The second structure has a through-hole area that extends through itself, and the through-hole area is arranged along the length direction of the insert rod.

5. The silicon wafer carrier according to claim 4, characterized in that, The second structure has a cross-section perpendicular to the length direction of the insert rod, and the shape of the hollowed-out area corresponds to the shape of the cross-section of the second structure.

6. The silicon wafer carrier according to claim 4, characterized in that, The second structure has a cross-section perpendicular to the length direction of the insert rod. The area of ​​the cross-section includes the area of ​​the hollowed-out region and the area of ​​the solid region outside the hollowed-out region. The ratio of the area of ​​the hollowed-out region to the area of ​​the cross-section is 1:2 to 1:

5.

7. The silicon wafer carrier according to claim 1, characterized in that, The first structure has a contact portion for contacting the silicon wafer, the contact portion being a sharp corner or an arc-shaped portion.

8. The silicon wafer carrier according to claim 7, characterized in that, Along the height direction of the first structure, the minimum distance between the contact portion and the insert rod is 4.5mm to 5.5mm.

9. The silicon wafer carrier according to claim 1, characterized in that, Along the width direction of the silicon wafer carrier, the first structure has a projected shape, which is formed by a first side and a second side connected to opposite sides of the first side. The first side is located away from the insertion rod. The second side is used to contact the silicon wafer, and the connection between the first side and the second side is an arc-shaped structure.

10. The silicon wafer carrier according to claim 1, characterized in that, Along the length of the insert rod, the maximum width of the first structure is 2.5mm to 3.5mm; and / or, The height of the locking teeth is 8.5mm to 9.5mm.