DFN packaging structure of power MOSFET chip

Abstract

The utility model discloses a DFN packaging structure of a power MOSFET chip, and relates to the technical field of MOSFET chip DFN packaging, the DFN packaging structure comprises an MOSFET chip DFN packaging body, the top of the MOSFET chip DFN packaging body is provided with a grid plate through a mounting rack, the grid plate is located at a heat dissipation port of the MOSFET chip DFN packaging body, the interior of the mounting rack is provided with a first sliding plate and a first insertion rod through a sliding rod, and the first sliding plate and the first insertion rod are provided with a second sliding plate through a sliding rod. The outer side of the sliding rod is further sleeved with a first spring, one end of the first spring is connected with the first sliding plate, the other end of the first spring is connected with the inner wall of the cavity, and a dustproof plate is further arranged on the mounting frame in a sliding mode. According to the utility model, under the action of the grid plate and the insertion rod, the effective protection of the heat dissipation port is realized, the grid plate can prevent dust from blocking the heat dissipation port and ensure the heat dissipation efficiency, and meanwhile, the insertion rod mechanism enables the grid plate to be conveniently and rapidly assembled and disassembled and is convenient to clean and maintain, so that the service life of the MOSFET chip is prolonged.

Description

TECHNICAL FIELD

[0001] The utility model relates to MOSFET chip DFN packaging technical field, specifically a kind of DFN packaging structure of power MOSFET chip. BACKGROUND

[0002] With the continuous development of electronic technology, power MOSFET chip plays an increasingly important role in power electronic system.

[0003] Traditional MOSFET chip packaging structure often uses simple fin or cooling fan to dissipate heat, but these methods have low heat dissipation efficiency, large noise, large space occupation and other problems, and the existing MOSFET chip DFN packaging structure is easy to be blocked by dust, which reduces the heat dissipation efficiency, and the dustproof measures are often not flexible enough, which is not convenient for cleaning and maintenance, therefore, we propose a kind of DFN packaging structure of power MOSFET chip. UTILITY MODEL CONTENTS

[0004] The utility model aims at providing a kind of DFN packaging structure of power MOSFET chip to solve the problems raised in the above background.

[0005] To achieve the above purpose, the utility model provides the following technical scheme:

[0006] A kind of DFN packaging structure of power MOSFET chip, including MOSFET chip DFN packaging body, the MOSFET chip DFN packaging body top is provided with mounting bracket, mounting bracket is provided with grid plate, grid plate is located at MOSFET chip DFN packaging body heat dissipation port, the inside of mounting bracket is also evenly provided with several cavities, cavity is provided with slide bar, slide bar is provided with the first sliding plate of sliding, the first sliding plate side wall is provided with the first plug rod, the grid plate is provided with the insertion hole of the first plug rod cooperation, the outer side of slide bar is also provided with the first spring, the first spring one end is connected with the first sliding plate, the other end of the first spring is connected with the cavity inner wall, the mounting bracket is also provided with dustproof plate of sliding.

[0007] As a further scheme of the utility model: the mounting bracket is also evenly provided with several installation cavities, installation cavity is provided with telescopic rod, telescopic rod telescopic arm end is provided with the second sliding plate, the second sliding plate outer wall is provided with the second plug rod, the dustproof plate left and right side outer wall is provided with the two limit holes of front and back cooperation with the second plug rod.

[0008] As a further scheme of the utility model: the first sliding plate side wall is also provided with the first support rod, and the first support rod penetrates the side wall of mounting bracket and is connected with the mounting bracket.

[0009] As a further scheme of the utility model: the telescopic rod outer side is equipped with the second spring.

[0010] As a further scheme of the utility model: the second spring one end is connected with the installation cavity inner wall, the second spring other end is connected with the second sliding plate.

[0011] As a further scheme of the utility model: the second sliding plate still is equipped with the second support rod.

[0012] Compared with prior art, the utility model has the beneficial effects as follows:

[0013] 1, under the action of grid plate and insert rod, the effective protection of the heat dissipation port is realized, the grid plate can prevent dust from plugging the heat dissipation port, guarantees the heat dissipation efficiency, and simultaneously, the insert rod mechanism makes the grid plate can be conveniently and quickly installed and disassembled, is convenient for cleaning and maintenance, thereby prolongs the service life of MOSFET chip.

[0014] 2, under the action of dustproof plate and telescopic rod, further improve the dustproof effect, the dustproof plate can completely close the heat dissipation port when not being used, effectively prevents dust from entering the encapsulation inside, and the telescopic rod mechanism is through the elastic force of second spring, makes dustproof plate can stably stay in the open or closed position, and the design of second support rod also facilitates the operation of dustproof plate, makes the dustproof measure more flexible and practical. BRIEF DESCRIPTION OF DRAWINGS

[0015] Fig. 1 It is the structure schematic view of the utility model embodiment.

[0016] Fig. 2 It is the structure schematic view of the utility model embodiment's plan.

[0017] Fig. 3 It is the structure schematic view of the place A in the utility model embodiment.

[0018] Fig. 4 It is the structure schematic view of the place B in the utility model embodiment.

[0019] Marked with the drawing: 1, MOSFET chip DFN encapsulation body;2, mounting frame;3, grid plate;4, slide bar;5, first sliding plate;6, first insert rod;7, first spring;8, first support rod;9, dustproof plate;10, telescopic rod;11, second sliding plate;12, second insert rod;13, second spring;14, second support rod. DETAILED DESCRIPTION

[0020] The utility model will be combined with the drawings detailed below, in the drawing or specification, similar or same part uses same mark, and in practical application, the shape, thickness or height of each component can be enlarged or reduced. The utility model lists each embodiment only for describing the utility model, and is not used to limit the scope of the utility model. Any obvious modification or change made to the utility model does not deviate from the spirit and scope of the utility model.

[0021] Embodiment

[0022] Please refer to Figs. 1-4 , the utility model discloses a kind of DFN package structure of power MOSFET chip, including MOSFET chip DFN package body 1, MOSFET chip DFN package body 1 top is provided with mounting bracket 2, mounting bracket 2 is provided with grid plate 3, grid plate 3 is located at MOSFET chip DFN package body 1 heat dissipation port, when under the action of grid plate 3, the condition that MOSFET chip DFN package body 1 heat dissipation port is jammed by dust can be reduced, to further guarantee the use efficiency of the MOSFET chip DFN package body 1.

[0023] The mounting bracket 2 inside is also uniformly provided with a plurality of cavities, the cavity is provided with a sliding rod 4, the first sliding plate 5 is slidably arranged on the sliding rod 4, the first insertion rod 6 is arranged on the side wall of the first sliding plate 5, the insertion hole for cooperating with the first insertion rod 6 is arranged on the grid plate 3, when under the action of the first insertion rod 6 and the insertion hole, not only the mounting quality of the grid plate 3 is guaranteed, but also the disassembly of the grid plate 3 is facilitated, and then the cleaning of the grid plate 3 by the staff is facilitated, and then the use efficiency of the grid plate 3 is guaranteed, the first spring 7 is further sleeved on the outer side of the sliding rod 4, one end of the first spring 7 is connected with the first sliding plate 5, the other end of the first spring 7 is connected with the inner wall of the cavity, when under the action of the first spring 7, the connection quality of the first insertion rod 6 and the insertion hole is guaranteed, and then the mounting quality of the grid plate 3 is guaranteed, the first supporting rod 8 is further arranged on the side wall of the first sliding plate 5, the first supporting rod 8 penetrates through the side wall of the mounting bracket 2 and is slidably connected with the mounting bracket 2, when the first supporting rod 8 is used, the first sliding plate 5 can be moved, when disassembly and cleaning of the grid plate 3 are needed in actual use, the first supporting rod 8 is pulled outward by the staff to make the first sliding plate 5 drive the first insertion rod 6 to move out of the insertion hole, at this time, the grid plate 3 can be taken down, and then the cleaning work of the grid plate 3 by the staff is facilitated, when the grid plate 3 is put back, the first insertion rod 6 is inserted into the insertion hole under the action of the first spring 7 when the first supporting rod 8 is loosened, and then the installation and fixation of the grid plate 3 are completed, so that the use efficiency of the grid plate 3 is guaranteed.

[0024] The dustproof plate 9 is also slidably arranged on the mounting frame 2, and the grid plate 3 can be blocked under the action of the dustproof plate 9, so that the heat dissipation port of the MOSFET chip DFN packaging body 1 can be sealed when not in use, thereby reducing the occurrence of dust entering the MOSFET chip DFN packaging body 1 through the grid plate 3, and thereby ensuring the use efficiency.

[0025] The mounting frame 2 is also uniformly provided with a plurality of mounting cavities, and a telescopic rod 10 is arranged in the mounting cavity. The telescopic rod 10 is provided with a second sliding plate 11 at the end of the telescopic arm. The second sliding plate 11 is provided with a second insertion rod 12 on the outer wall. The dustproof plate 9 is provided with two limiting holes on the left and right outer walls, which cooperate with the second insertion rod 12. At this time, under the action of the second insertion rod 12, the position of the dustproof plate 9 when opened can be limited, and the position of the dustproof plate 9 after being closed can also be limited, thereby ensuring the use efficiency of the dustproof plate 9. The telescopic rod 10 is provided with a second spring 13 on the outside. One end of the second spring 13 is connected with the inner wall of the mounting cavity. The other end of the second spring 13 is connected with the second sliding plate 11. At this time, under the action of the second spring 13, the connection quality of the second insertion rod 12 and the limiting hole is ensured. The second sliding plate 11 is also provided with a second supporting rod 14. Under the action of the second supporting rod 14, the second insertion rod 12 is conveniently removed from the limiting hole, thereby facilitating the adjustment of the dustproof plate 9.

[0026] In actual use, the MOSFET chip DFN packaging body 1 is fixed by the mounting frame 2, and the grid plate 3 on the upper part covers the heat dissipation port to prevent dust from blocking. The grid plate 3 is stably installed on the mounting frame 2 through the cooperation of the first insertion rod 6 and the insertion hole and the elastic force of the first spring 7, and is convenient to disassemble and clean. When cleaning is needed, the first supporting rod 8 is pulled, the first sliding plate 5 drives the first insertion rod 6 to separate from the insertion hole, and the grid plate 3 can be removed. The dustproof plate 9 can be driven by the telescopic rod 10 on the mounting frame 2 to drive the second sliding plate 11 and the second insertion rod 12 when the MOSFET chip DFN packaging body 1 is not in use. Under the elastic force of the second spring 13, the second insertion rod 12 is inserted into the limiting hole of the dustproof plate 9 to seal the heat dissipation port. The opening and closing positions of the dustproof plate 9 can be limited by the cooperation of the second insertion rod 12 and the limiting hole, and the second supporting rod 14 facilitates the adjustment of the position of the dustproof plate 9.

[0027] It is apparent for a person skilled in the art that the present application is not limited to the details of the above-described exemplary embodiments, but that it can be implemented in other concrete forms without departing from the spirit or the essential characteristics of the present application. Therefore, the embodiments should be considered as exemplary and non-limiting, the scope of the present application being defined by the claims appended hereto rather than by the above description, and all the changes which fall within the meaning and the scope of the equivalent elements of the claims are intended to be embraced therein. Any reference signs in the claims should not be construed as limiting the claims to the figures in which the reference signs are used.

[0028] Furthermore, it should be understood that although the present specification describes exemplary embodiments, not every embodiment contains only one independent technical solution, and the present specification is described in this way only for the sake of clarity, and a person skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that a person skilled in the art can understand.

Claims

1. A DFN package structure of a power MOSFET chip, comprising a MOSFET chip DFN package body (1), characterized in that, The MOSFET chip DFN package body (1) top is provided with mounting frame (2), mounting frame (2) is provided with grid plate (3), grid plate (3) is located at the heat dissipation port of MOSFET chip DFN package body (1), the inside of mounting frame (2) is also uniformly provided with several cavities, the cavity is provided with slide rod (4), the first slide plate (5) is arranged on the slide rod (4), the first slide plate (5) side wall is provided with first insertion rod (6), the grid plate (3) is provided with the insertion hole for cooperation with first insertion rod (6), the outside of slide rod (4) is also provided with first spring (7), one end of first spring (7) is connected with first slide plate (5), the other end of first spring (7) is connected with the inner wall of cavity, the mounting frame (2) is also provided with dustproof plate (9) slidingly.

2. The DFN package structure of a power MOSFET chip according to claim 1, wherein, The mounting frame (2) is also uniformly provided with several installation cavities, the installation cavity is provided with telescopic rod (10), the second slide plate (11) is arranged at the end of telescopic arm of telescopic rod (10), the second slide plate (11) outer wall is provided with second insertion rod (12), the left and right outer walls of dustproof plate (9) are provided with two limiting holes for cooperation with second insertion rod (12).

3. The DFN package structure of a power MOSFET chip according to claim 1, wherein, The first slide plate (5) side wall is also provided with first support rod (8), and the first support rod (8) penetrates the side wall of mounting frame (2) and is connected with the mounting frame (2) slidingly.

4. The DFN package structure of a power MOSFET chip according to claim 2, wherein, The outside of telescopic rod (10) is provided with second spring (13).

5. The DFN package structure of a power MOSFET chip according to claim 4, wherein, One end of second spring (13) is connected with the inner wall of installation cavity, and the other end of second spring (13) is connected with second slide plate (11).

6. The DFN package structure of a power MOSFET chip according to claim 2, wherein, The second slide plate (11) is also provided with second support rod (14).

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