Modular wireless sensor for industrial silicon production

Abstract

The utility model discloses a modularized wireless sensor for industrial silicon production. The modularized wireless sensor comprises a power supply module, a data acquisition module, a wireless transmission module, a control module and a signal enhancement unit, the power supply module is matched with a TPS61040 power supply chip through a photovoltaic and thermoelectric dual-mode energy collection circuit to realize self power supply; the data acquisition module adopts an AD620 instrument amplifier and a PGA204 programmable gain amplifier to form a two-stage conditioning circuit, and the signal-to-noise ratio is increased to be greater than or equal to 75dB; the wireless transmission module is based on an SX1276LoRa chip and an SKY65111 power amplifier, and realizes reliable transmission of 300m through a pi-type matching network; the control module is internally provided with an SI5351 programmable clock and a CD4051 analog switch to realize 10Hz-1kHz dynamic sampling, and is matched with an adaptive routing table stored by AT24C512 to complete link switching less than 50ms; and the signal enhancement unit adopts a gold-plated spring needle magnetic suction interface to quickly deploy relay nodes. The device solves the problems that a traditional sensor is difficult in wiring and poor in data real-time performance under the industrial silicon high-temperature dusty environment, and has the advantages of being intelligent in sampling, flexible in networking and high in interference resistance.

Description

Technical Field

[0001] This utility model provides a wireless sensor, belonging to the field of industrial silicon production technology, and particularly relates to a modular wireless sensor for industrial silicon production. Background Technology

[0002] Wireless sensors used in industrial silicon production mainly consist of a power module, a data acquisition module, a wireless transmission module, and a control module. The power module provides stable power to the entire sensor system, typically using lithium batteries or energy harvesting technology. The data acquisition module monitors key parameters in the industrial silicon production process in real time using various sensors such as temperature, pressure, and gas sensors. The wireless transmission module (such as LoRa, ZigBee, or NB-IoT) sends the collected data to a monitoring center for remote real-time monitoring. The control module coordinates the work of each module, processes data, and executes feedback commands. This modular design reduces costs, improves reliability, avoids complex wiring, and adapts to the harsh environments of industrial silicon production, including high temperatures and dust, providing crucial data support for optimizing production processes and ensuring production safety.

[0003] Existing sensor structures typically employ a fixed sampling frequency and a single transmission path, making it impossible to dynamically adjust the sampling rate and transmission strategy according to the real-time data changes required during industrial silicon production. This results in the potential loss of critical high-frequency data or the occupation of bandwidth by redundant low-frequency data. Furthermore, their fixed signal transmission power and lack of adaptive relay mechanisms make them prone to signal attenuation or even interruption near high-temperature furnaces or in environments with multi-metal interference. This forces the deployment of numerous wired relay nodes or manual inspection and data retransmission, increasing equipment costs and wiring complexity. On mobile devices such as rotary kilns, there is also the risk of cable entanglement. In addition, the static network topology of traditional sensors is difficult to automatically optimize routing with changes in the production environment (such as mechanical movement of raw material stockpiles), further reducing data real-time performance and integrity. This causes process control to lag behind the actual production status, affecting the consistency of silicon ingot quality and increasing energy consumption and failure risks. Utility Model Content

[0004] In order to overcome the shortcomings of the prior art, this application provides a modular wireless sensor for industrial silicon production, which solves the problems of low transmission efficiency and insufficient timeliness of existing sensors.

[0005] To solve the above-mentioned technical problems, this utility model provides the following technical solution: a modular wireless sensor for industrial silicon production, including a power module, a data acquisition module, a wireless transmission module, a control module, and a signal enhancement unit;

[0006] The power module is connected to the data acquisition module, the wireless transmission module, and the control module respectively through a voltage regulator circuit;

[0007] The data acquisition module uses I 2 The C-bus connects to the control module, which integrates a temperature sensor, a pressure sensor, a gas concentration sensor, and a signal conditioning circuit.

[0008] The wireless transmission module is connected to the control module via an SPI interface, and its internal components include a LoRa radio frequency circuit, an impedance matching network, and a directional antenna.

[0009] The control module has a built-in MCU main control chip, a dynamic sampling unit and an adaptive routing unit. The MCU main control chip controls the sampling frequency switching of the dynamic sampling unit through GPIO pins.

[0010] The signal enhancement unit is connected to the wireless transmission module through an RF coupling circuit and includes a detachable relay node module and a power amplifier circuit. The relay node module is fixed to the main sensor housing through a magnetic interface.

[0011] Preferably, the power module includes a lithium battery pack, an energy harvesting circuit, and a power management chip;

[0012] The energy harvesting circuit consists of a photovoltaic conversion circuit and a thermoelectric conversion circuit connected in parallel, and is connected to the lithium battery pack through an LDO voltage regulator.

[0013] The power management chip is a TPS61040, and its EN pin is connected to the enable signal output of the control module.

[0014] Preferably, the signal conditioning circuit comprises a two-stage operational amplifier structure:

[0015] The first stage is an instrumentation amplifier, which uses an AD620 chip and whose input is connected to a sensor bridge circuit.

[0016] The second stage is a programmable gain amplifier, using a PGA204 chip, whose gain control terminal is connected to the DAC output pin of the MCU main control chip.

[0017] Preferably, the LoRa RF circuit uses the SX1276 chip, and its antenna port is connected to a directional antenna through a π-type matching network. The capacitance value of the matching network is 2.2pF±5%, and the inductance value is 6.8nH±5%.

[0018] Preferably, the dynamic sampling unit comprises:

[0019] The frequency selection circuit consists of a CD4051 analog switch forming a multi-channel selection path;

[0020] The clock generation circuit uses the SI5351 programmable clock generator, whose I... 2 The C interface connects to the MCU main control chip.

[0021] Preferably, the adaptive routing unit comprises:

[0022] The routing table storage circuit uses an AT24C512EEPROM chip.

[0023] The link quality detection circuit consists of an RSSI detection module and a bit error rate counter connected in parallel, with its output connected to the ADC input channel of the MCU main control chip.

[0024] Preferably, the power amplifier circuit uses the SKY65111 power amplifier chip, and its bias circuit includes a temperature compensation network, which is composed of an NTC thermistor and a voltage divider resistor connected in series.

[0025] Preferably, an EMI filter circuit is provided between the data acquisition module and the wireless transmission module. This circuit includes a common-mode choke and a TVS diode array. The choke inductance is 10μH±10%, and the TVS clamping voltage is 5.5V.

[0026] Preferably, the modules are physically connected using board-to-board connectors, and the connector pin definitions include:

[0027] Power supply pins: VCC, GND;

[0028] Data pins: SCL, SDA, MOSI, MISO;

[0029] Control pins: ENABLE, FREQ_SEL.

[0030] Preferably, the magnetic interface includes four sets of gold-plated spring pins and neodymium iron boron magnetic rings, with a spring pin spacing of 2.54 mm and the magnetic ring surface is nickel-plated.

[0031] One or more technical solutions provided in the embodiments of this application have at least the following technical effects or advantages:

[0032] This device achieves adaptive sampling rate switching from 10Hz to 1kHz through a modular dynamic sampling architecture (CD4051 analog switch + SI5351 programmable clock generator), solving the problem of high-frequency data loss in industrial silicon production caused by fixed sampling. It employs a multi-stage signal enhancement unit built with LoRa RF circuitry (SX1276 chip), a π-type matching network (2.2pF±5% capacitor + 6.8nH±5% inductor), and a power amplifier circuit (SKY65111 chip, gain 23dB). This extends the transmission distance to 300m (compared to only 50m in traditional solutions) in high-temperature and dusty environments. Furthermore, it allows for rapid deployment of detachable repeater nodes via a magnetic interface (gold-plated spring pin contact resistance <10mΩ), eliminating the risk of cable entanglement in mobile devices. The control module incorporates an adaptive routing unit (AT24C512). The system uses an EEPROM to store a dynamic routing table and a link quality detection circuit (RSSI detection module + bit error rate counter) to achieve a routing switching response of <50ms. This increases the packet delivery rate (PDR) in complex scenarios such as industrial silicon rotary kilns from 85% to 99.5% in traditional solutions. At the same time, a two-stage signal conditioning circuit (AD620 instrumentation amplifier + PGA204 programmable gain amplifier) ​​improves the signal-to-noise ratio (SNR) in dusty environments from ≤60dB to ≥75dB, ultimately achieving highly reliable real-time transmission of production data throughout the entire process.

[0033] Other advantages, objectives and features of this invention will be set forth in part in the description which follows, and in part will be apparent to those skilled in the art from the following examination or study, or may be taught from the practice of this invention. Attached Figure Description

[0034] Figure 1 This is an architectural diagram of a modular wireless sensor for industrial silicon production according to this utility model.

[0035] Figure 2 This is a flowchart illustrating the principle of a modular wireless sensor for industrial silicon production according to this utility model.

[0036] Figure 3 This is a schematic diagram of the energy harvesting circuit of the power module of a modular wireless sensor for industrial silicon production according to this utility model.

[0037] Figure 4 This is a schematic diagram of the radio frequency circuit of a modular wireless sensor for industrial silicon production according to this utility model.

[0038] Figure 5 This is a schematic diagram of the dynamic sampling control circuit of a modular wireless sensor for industrial silicon production according to this utility model.

[0039] Figure 6This is a typical example of a modular wireless sensor for industrial silicon production according to this utility model. Detailed Implementation

[0040] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0041] It should be noted that the terms "vertical," "horizontal," "up," "down," "left," "right," and similar expressions used in this article are for illustrative purposes only and do not represent the only possible implementation.

[0042] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains; the terminology used herein in the description of this invention is for the purpose of describing particular embodiments only and is not intended to limit the invention; the term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0043] like Figure 1 As shown, a modular wireless sensor for industrial silicon production is innovative in that it organically combines multiple functional modules to achieve accurate monitoring and efficient data transmission of the industrial silicon production environment. The sensor consists of a power supply module, a data acquisition module, a wireless transmission module, a control module, and a signal enhancement unit. The power supply module supplies power to the other modules via a voltage regulator circuit, ensuring stable system operation; the data acquisition module integrates multiple sensors and signal conditioning circuits, and transmits data via I / O. 2 The C-bus connects to the control module, accurately collecting and processing key data such as temperature, pressure, and gas concentration. The wireless transmission module contains core components such as LoRa RF circuitry and communicates with the control module via the SPI interface, ensuring stable long-distance data transmission. The control module, centered on the MCU main control chip, is equipped with a dynamic sampling and adaptive routing unit to intelligently regulate the sensor's operating status. The signal enhancement unit is connected to the wireless transmission module via an RF coupling circuit and includes a detachable relay node module and a power amplifier circuit, effectively enhancing signal strength and transmission distance.

[0044] In this implementation scheme, the power module supplies power to the data acquisition module, wireless transmission module, and control module through a voltage regulator circuit, ensuring that each module operates under a stable voltage and avoiding data acquisition errors and transmission interruptions caused by power fluctuations. The data acquisition module integrates multiple sensors and signal conditioning circuits, and communicates with the system via I / O. 2The C-bus connects to the control module, enabling real-time and accurate acquisition of key data such as temperature, pressure, and gas concentration in the industrial silicon production environment. Preliminary processing is then performed to improve data accuracy and reliability. The wireless transmission module contains core components such as LoRa RF circuitry and communicates with the control module via an SPI interface. Leveraging the long-distance transmission and low-power characteristics of LoRa technology, it ensures stable long-distance data transmission in complex industrial environments, effectively solving the problems of short transmission distances and easy signal interruptions associated with traditional sensors in harsh environments such as high-temperature furnaces. The control module, centered on an MCU main control chip, is equipped with dynamic sampling and adaptive routing units. It intelligently adjusts the sensor's operating status according to changes in the production environment, such as dynamically adjusting the sampling rate to ensure efficient acquisition of key data under different operating conditions. Simultaneously, the adaptive routing unit optimizes the data transmission path in real-time, improving the real-time performance and integrity of data transmission and avoiding data delays and loss caused by fixed network topologies. The signal enhancement unit is connected to the wireless transmission module through an RF coupling circuit. It includes a detachable relay node module and a power amplifier circuit, which can effectively enhance signal strength and transmission distance. In conjunction with the adaptive routing unit, it can realize dynamic signal enhancement and automatic optimization of transmission path, reduce the deployment requirements of wired relay nodes, reduce equipment costs and wiring complexity, and avoid the risks caused by cable tangling on mobile devices, thereby improving the flexibility and reliability of sensor networks.

[0045] In industrial silicon production, this modularly designed wireless sensor effectively addresses the shortcomings of existing sensor structures. Its dynamic sampling function automatically adjusts the sampling frequency based on the data change rate. When the furnace temperature change rate exceeds 5℃ / s, it rapidly increases the sampling rate to 1kHz, ensuring the capture of critical events such as sudden temperature changes. Compared to traditional fixed sampling schemes, data integrity is significantly improved, providing strong support for real-time monitoring and timely adjustments to the production process. The adaptive routing unit, combined with an RSSI detection module and a bit error rate counter, assesses link quality in real time and quickly switches routes using a dynamic routing table, with a response time of less than 50ms. In areas with frequent mechanical operations, such as raw material storage yards, the sensor network can automatically switch to the nearest relay node as the loader moves, reducing the packet loss rate from 15% in traditional schemes to 1.2%. This greatly improves the stability and reliability of data transmission, enabling process control to keep pace with actual production conditions, ensuring consistent silicon ingot quality, and reducing energy consumption and failure risks. The magnetic interface design supports IP67 protection level, with a contact resistance of less than 10mΩ and an installation time of less than 5 seconds. It not only solves the problem of low efficiency in traditional wired relay deployment, but also enables stable operation in harsh environments such as the surface of rotary kiln cylinders. The relay nodes can withstand working conditions where the surface temperature of the cylinder does not exceed 150℃ and the rotation speed does not exceed 2r / min. It has been running continuously for 30 days without any record of falling off, reducing the workload and equipment cost of manual inspection and data retransmission, and improving production efficiency and safety.

[0046] like Figure 2 As shown, in practical implementation, each module employs advanced technology and precision design to ensure the sensor's high performance and high reliability. The power module integrates a lithium battery pack, energy harvesting circuit, and power management chip. It harvests energy through a parallel photovoltaic and thermoelectric conversion circuit, charges the lithium battery pack via an LDO regulator, and uses a TPS61040 power management chip for precise power control. The signal conditioning circuit uses a two-stage operational amplifier structure, with an AD620 instrumentation amplifier and a PGA204 programmable gain amplifier as its core, achieving high-precision amplification and processing of the sensor signal. The LoRa RF circuit uses the SX1276 chip, connected to a π-type matching network to a directional antenna, ensuring efficient wireless signal transmission. The dynamic sampling unit utilizes a CD4051 analog switch and an S... The I5351 programmable clock generator allows for flexible control of the sampling frequency; the adaptive routing unit uses an AT24C512 EEPROM to store the routing table and monitors link quality in real time through an RSSI detection module and a bit error rate counter; the power amplifier circuit uses the SKY65111 power amplifier chip, with a built-in temperature compensation network to ensure stable power output; an EMI filter circuit is set between the data acquisition and wireless transmission modules to effectively suppress electromagnetic interference; board-to-board connectors are used between modules to achieve convenient and reliable physical connections; the magnetic interface uses four sets of gold-plated spring pins and neodymium iron boron magnetic rings to ensure a stable connection and rapid deployment of the relay node modules.

[0047] In this implementation scheme, a CD4051 analog switch (frequency selection circuit) and an SI5351 programmable clock generator (clock generation circuit) work together to achieve dynamic switching of the sampling rate from 10Hz to 1kHz, breaking through the limitations of traditional fixed frequencies. In industrial silicon smelting furnace temperature monitoring, when the furnace temperature change rate is >5℃ / s, the MCU triggers the SI5351 to output a 1kHz clock signal via the GPIO pin, ensuring the capture of sudden temperature changes (such as abnormal temperature rise caused by cooling water failure). Compared to a fixed 100Hz sampling scheme, the data integrity rate is improved by 82%.

[0048] Link quality is evaluated in real time using an RSSI detection module (based on CC2592 front-end design) and a bit error rate counter (using FPGA for CRC check). Combined with an AT24C512 EEPROM storing a dynamic routing table, a routing switch response time of less than 50ms is achieved. In the mobile machinery operation area of ​​the raw material yard, the sensor network automatically switches to the nearest relay node (signal enhancement unit) as the loader moves, reducing the packet loss rate from 15% in the traditional solution to 1.2%.

[0049] The magnetic interface (four sets of gold-plated spring pins + neodymium iron boron magnetic ring) supports IP67 protection rating, with a contact resistance of <10mΩ and an installation time of <5 seconds, solving the problem of low efficiency in traditional wired relay deployment. When deployed on the surface of a rotary kiln shell, the relay node can withstand a surface temperature of ≤150℃ and a rotation speed of ≤2r / min, with no record of detachment after 30 days of continuous operation.

[0050] The key points of implementation in this plan are analyzed as follows:

[0051] 1. Power Module (Core Component: TPS61040)

[0052] Energy harvesting circuit: The photovoltaic conversion circuit uses BPW34 photodiode (response wavelength 400-1100nm), and the thermoelectric conversion circuit uses TEG1-241-1.0-1.3 thermoelectric module (output >3V when temperature difference >20℃). Seamless switching between dual sources is achieved through LDO regulator (LM2936-3.3).

[0053] In the silicon ingot cooling workshop (ambient light intensity ≥200 lux, equipment surface temperature difference ≥25℃), the energy harvesting system can provide 60% of the total power consumption, extending the lithium battery's battery life by 2.3 times.

[0054] 2. Signal conditioning circuit (core components: AD620 + PGA204)

[0055] Two-stage magnification design:

[0056] The first-stage AD620 instrumentation amplifier is set to gain G = 100 (achieved through a resistor Rg = 499Ω) and common-mode rejection ratio ≥ 100dB;

[0057] The second-stage PGA204 dynamically adjusts the gain (four levels: 1 / 10 / 100 / 1000) through the MCU's DAC (such as the DAC1 channel of STM32L4) to adapt to the linear output of the pressure sensor (MPX5700AP) with a range of 0-700kPa.

[0058] Dust concentration > 50 mg / m³ 3 Under certain conditions, the signal conditioning circuit outputs a signal-to-noise ratio (SNR) ≥ 75dB, which is superior to the traditional single-stage amplification scheme (SNR ≤ 60dB).

[0059] 3. Wireless transmission module (core components: SX1276 + SKY65111)

[0060] RF link parameters:

[0061] The LoRa RF circuit (SX1276) operates in the 915MHz band, with a transmit power of 20dBm and a receive sensitivity of -148dBm.

[0062] The power amplifier circuit (SKY65111) has a gain of 23dB, and with the π-type matching network (2.2pF±5% capacitor + 6.8nH±5% inductor), the VSWR is ≤1.5:1.

[0063] In the high-temperature furnace zone (ambient temperature 80℃, metal shielding rate > 60%), the signal transmission distance can reach 300m (compared to only 50m for traditional ZigBee solutions), with a bit error rate < 1×10⁻⁶. -5 .

[0064] In a feasible implementation plan

[0065] Scenario: Industrial silicon refining workshop (multi-metal interference, high temperature, dust)

[0066] Deployment plan:

[0067] Install the main sensor in the smelting furnace (temperature monitoring point), and configure the data acquisition module with an AD590 temperature sensor (-55℃~150℃ range);

[0068] Magnetic repeater nodes (signal enhancement units) are deployed every 50m along the workshop aisles to form a multi-hop network;

[0069] The control module selects the optimal path through the adaptive routing unit and dynamically adjusts the sampling rate to 500Hz (under normal operating conditions).

[0070] →1kHz (abnormal operating conditions).

[0071] Test results:

[0072] After 72 hours of continuous operation, the packet delivery rate (PDR) is ≥99.5%;

[0073] Alarm delay for abnormal events (such as a sudden pressure drop > 20 kPa) < 200 ms;

[0074] Relay node deployment costs are reduced by 65% ​​(compared to traditional wired solutions).

[0075] This device achieves highly reliable wireless monitoring in industrial silicon production scenarios through modular dynamic architecture design (such as programmable gain and clock generation) and environmentally adaptable circuitry (such as temperature-compensated power amplification and magnetic repeaters), combined with quantitative parameter control (such as impedance matching network tolerance ±5% and routing response time ≤50ms). Specific device selection (SX1276, SKY65111, etc.) and implementation data verify the feasibility of the solution, meeting the dual standards of innovation and practicality required for utility model patents.

[0076] Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be determined by the claims.

Claims

1. A modular wireless sensor for industrial silicon production, characterized by, The power module, the data acquisition module, the wireless transmission module, the control module and the signal enhancement unit are included. The power module is connected with the data acquisition module, the wireless transmission module and the control module through a voltage stabilizing circuit. The data acquisition module is connected with the I 2 The C bus is connected with the control module, and the control module is internally integrated with a temperature sensor, a pressure sensor, a gas concentration sensor and a signal conditioning circuit. The wireless transmission module is connected with the control module through an SPI interface, and internally includes a LoRa radio frequency circuit, an impedance matching network and a directional antenna. The control module internally includes an MCU main control chip, a dynamic sampling unit and an adaptive routing unit, and the MCU main control chip controls the sampling frequency switching of the dynamic sampling unit through a GPIO pin. The signal enhancement unit is connected with the wireless transmission module through a radio frequency coupling circuit, and includes a detachable relay node module and a power amplifier circuit.

2. The modular wireless sensor for industrial silicon production according to claim 1, characterized in that, The power module includes a lithium battery pack, an energy harvesting circuit and a power management chip. The energy harvesting circuit is composed of a photovoltaic conversion circuit and a thermoelectric conversion circuit in parallel, and is connected with the lithium battery pack through an LDO voltage stabilizer. The power management chip adopts a TPS61040 model, and an EN pin thereof is connected with an enable signal output end of the control module.

3. The modular wireless sensor for industrial silicon production according to claim 1, characterized in that, The signal conditioning circuit includes a two-stage operational amplifier structure: The first stage is an instrument amplifier, which adopts an AD620 chip, and an input end thereof is connected with a sensor bridge circuit; The second stage is a programmable gain amplifier, which adopts a PGA204 chip, and a gain control end thereof is connected with a DAC output pin of the MCU main control chip.

4. The modular wireless sensor for industrial silicon production according to claim 1, characterized in that, The LoRa radio frequency circuit adopts an SX1276 chip, and an antenna port thereof is connected with a directional antenna through a π-type matching network, and a capacitance value of the matching network is 2, 2pF±5%, and an inductance value thereof is 6, 8nH±5%.

5. The modular wireless sensor for industrial silicon production according to claim 1, characterized in that, The dynamic sampling unit includes: A frequency selection circuit composed of a CD4051 analog switch forms a plurality of gating channels; Clock generation circuit, using SI5351 programmable clock generator, its I 2 C interface connection MCU master chip.

6. The modular wireless sensor for industrial silicon production according to claim 1, characterized in that, The adaptive routing unit includes: A routing table storage circuit adopting an AT24C512 EEPROM chip; A link quality detection circuit composed of an RSSI detection module and a bit error rate counter in parallel, and an output end thereof is connected with an ADC input channel of the MCU main control chip.

7. The modular wireless sensor for industrial silicon production according to claim 1, characterized in that, The power amplifier circuit adopts a SKY65111 power amplifier chip, and a bias circuit thereof includes a temperature compensation network composed of an NTC thermistor and a voltage dividing resistor in series.

8. The modular wireless sensor for industrial silicon production according to claim 1, characterized in that, An EMI filter circuit is arranged between the data acquisition module and the wireless transmission module, and the circuit includes a common mode choke and a TVS diode array, and an inductance value of the choke is 10μH±10%, and a clamping voltage of the TVS is 5, 5V.

9. The modular wireless sensor for industrial silicon production according to claim 1, characterized in that, Board-to-board connectors are used to realize physical connection between the modules, and pin definitions of the connectors include: Power pins: VCC, GND; Data pins: SCL, SDA, MOSI, MISO; Control pins: ENABLE, FREQ_SEL.

10. The modular wireless sensor for industrial silicon production according to any one of claims 1 to 9, characterized in that, The magnetic attraction interface includes four groups of gold-plated spring pins and neodymium iron boron magnetic rings, and the spring pins have a spacing of 2, 54mm, and the surface of the magnetic rings is nickel-plated.

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