LED packaging structure and display device

Abstract

The utility model relates to the technical field of display equipment, in particular to an LED packaging structure and a display device, and the LED packaging structure comprises a support, an LED chip arranged on the support, and a packaging glue layer for packaging the LED chip. The LED chip is of a multi-layer structure and comprises a blue light quantum well layer and a green light quantum well layer which are sequentially arranged, and a buffer layer is arranged between the blue light quantum well layer and the green light quantum well layer. The blue light quantum well layer and the green light quantum well layer can output blue light and green light at the same time, the buffer layer is arranged between the blue light quantum well layer and the green light quantum well layer, the buffer layer is mainly used for separating the blue light quantum well layer from the green light quantum well layer, the electron concentration of the buffer layer is far higher than the hole concentration, and the hole of a P-type semiconductor in the LED chip is compounded before being migrated to the green light quantum well. Therefore, holes of the blue light quantum well layer cannot be transmitted to the green light quantum well layer area, the green light quantum well area cannot generate electroluminescence, and the problem of non-uniform energy of blue light and green light under the condition of current change is solved.

Description

[Technical Field]

[0001] This utility model relates to the field of display equipment technology, and in particular to an LED packaging structure and display device. [Background Technology]

[0002] LED (Light Emitter Diode) is a solid-state semiconductor device that converts electrical energy into light energy. It boasts advantages such as low power consumption, excellent light-gathering effect, fast response speed, strong controllability, ability to withstand high impacts, long lifespan, and environmental friendliness. LEDs are gradually replacing traditional light sources, becoming the fourth generation of light sources. Different packaging structures have a significant impact on LED packaging devices, affecting aspects such as lifespan, emission angle, and color gamut.

[0003] Based on engineering experience, the smaller the half-width of blue, green, and red LED chips, the more concentrated the energy in the corresponding wavelength band, and the wider the range of colors that the display screen can express (i.e., the higher the color gamut). Since the half-width of blue LED chips and fluoride phosphors (i.e., red phosphors) is already very small, further optimization is difficult. Due to the physical limitations of green phosphors, the green light emitted after absorbing blue light typically shows a wider half-width in the relative spectral energy diagram, meaning energy is output across a large wavelength range of green light. This results in a color gamut of only 85%–90% for the display screen, failing to meet the growing demands of consumers. Therefore, some LED chips with multi-quantum-well structures have emerged. These chips simultaneously possess both blue and green quantum wells, enabling simultaneous output of both blue and green light, achieving a certain degree of high color gamut display. However, existing blue and green quantum wells are often simple stacked structures, both using electroluminescence, which can lead to uneven energy distribution between blue and green light under varying current conditions, resulting in color drift. [Utility Model Content]

[0004] To address the problem of uneven luminous energy distribution among quantum wells in existing multi-quantum-well LED chips, this invention provides an LED packaging structure and a display device.

[0005] The present invention provides an LED packaging structure, which includes a support, an LED chip disposed on the support, and an encapsulating adhesive layer for encapsulating the LED chip. The LED chip has a multi-layer structure, comprising a blue quantum well layer and a green quantum well layer disposed sequentially, with a buffer layer disposed between the blue quantum well layer and the green quantum well layer.

[0006] Preferably, the blue quantum well layer uses electroluminescence, and the green quantum well layer uses photoluminescence.

[0007] Preferably, the buffer layer is an N-type gallium nitride layer or an intrinsic gallium nitride layer.

[0008] Preferably, the thickness of the buffer layer is in the range of 0.1 nm to 1 nm.

[0009] Preferably, the LED chip is one of the following types: upright chip, vertical chip, and flip chip.

[0010] Preferably, the encapsulating adhesive layer is a red phosphor encapsulating adhesive layer.

[0011] Preferably, the encapsulating adhesive layer is a mixture of red phosphor and green phosphor.

[0012] Preferably, the bracket has a bowl-shaped structure with a bowl cavity, and the LED chip and the encapsulating adhesive are disposed inside the bowl cavity.

[0013] Preferably, the side of the bowl cavity where the LED chip is disposed is coated with white glue.

[0014] This utility model also provides a display device, including a carrier device and an LED encapsulation structure as described above disposed on the carrier device.

[0015] Compared with the prior art, the LED packaging structure and display device of this utility model have the following advantages:

[0016] 1. The LED packaging structure of this utility model includes a support, an LED chip disposed on the support, and an encapsulating adhesive layer for encapsulating the LED chip; the LED chip has a multi-layer structure, including a blue quantum well layer and a green quantum well layer disposed sequentially, with a buffer layer disposed between the blue and green quantum well layers; the light-emitting area of ​​this LED chip has blue and green quantum wells, and can simultaneously output blue and green light, wherein the green light has a narrower half-width, which can improve the color gamut to 100%~115% of NTSC; at the same time, a buffer layer is disposed between the blue and green quantum well layers, the buffer layer mainly serving to separate them. The blue and green quantum well layers have different quantum efficiencies under different currents. Therefore, when the current is changed, a severe color drift phenomenon will occur due to the change in the energy ratio of blue and green light. However, the electron concentration in the buffer layer is much higher than the hole concentration. The holes in the P-type semiconductor in the LED chip are recombinated before they migrate to the green quantum well. Therefore, the holes in the blue quantum well layer (electroluminescent region) will not be transported to the green quantum well layer region (photoluminescent region), so that the green quantum well region will not produce electroluminescence. Thus, the problem of uneven blue and green light energy under changing current will not occur.

[0017] 2. The blue quantum well layer of the LED packaging structure provided by this utility model adopts electroluminescence, and the green quantum well layer adopts photoluminescence. The two quantum wells adopt different light emission principles because the energy of blue and green light is not uniform under the condition of current change. When both blue and green light adopt the principle of electroluminescence (i.e., blue and green quantum well layers overlap each other or there is no buffer layer design), the quantum efficiency of green and blue quantum well layers is different under different currents. Therefore, when the current is changed, a serious color drift phenomenon will occur due to the change in the energy ratio of blue and green light. When a buffer layer is added, the green quantum well layer does not participate in the electroluminescence process. As the blue light energy increases, more blue light passes through the green quantum well layer and is converted into green light energy. The green quantum well layer adopts photoluminescence, so the energy ratio of green and blue light is almost unchanged, resulting in a better final display effect.

[0018] 3. The buffer layer of the LED packaging structure provided by this utility model is an N-type gallium nitride layer or an intrinsic gallium nitride layer; the use of N-type gallium nitride or intrinsic gallium nitride can provide electrons in the LED structure, construct PN junctions, etc., and is the core component of LED light emission, and is a key factor in achieving efficient light emission, stable operation and high performance.

[0019] 4. The thickness range of the buffer layer in the LED packaging structure provided by this utility model is 0.1nm-1nm; ensuring that the buffer layer has a certain thickness, so that holes in the P-type region will not be transmitted to the green quantum well region, ensuring that the green quantum well layer emits light by the principle of photoluminescence, and preventing the generation of blue-green light emission energy difference.

[0020] 5. The LED chip type of the LED packaging structure provided by this utility model is one of the following: upright chip, vertical chip, and flip chip. Upright chip, vertical chip, and flip chip are three commonly used chip structures for LEDs. The multilayer quantum well structure provided by this utility model, which includes a buffer layer, is compatible with various LED chip types and has wide applicability.

[0021] 6. The encapsulating adhesive layer of the LED encapsulation structure provided by this utility model is a red phosphor encapsulating adhesive layer; adding red phosphor enables the LED encapsulation structure to generate red light simultaneously, satisfying the requirements of the three primary colors of light emission.

[0022] 7. The encapsulating adhesive layer of the LED encapsulation structure provided by this utility model also contains green phosphor; mixing an appropriate amount of green phosphor into the encapsulating adhesive layer can enhance the luminous energy of green light, increase brightness without losing color gamut, and help improve the final display effect.

[0023] 8. The LED packaging structure provided by this utility model has a bowl-shaped support with a bowl cavity. The LED chip and encapsulating adhesive are placed inside the bowl cavity. The bowl cavity support can effectively reflect and concentrate the light emitted by the LED chip, making the light more concentrated and emitted in a specific direction, thereby improving the light output efficiency and light intensity. At the same time, the special bowl-shaped structure can provide effective heat dissipation, which can reduce the operating temperature of the LED chip and reduce the impact of thermal stress on the chip, thereby improving the luminous efficiency, stability and service life of the LED.

[0024] 9. The LED chip is disposed on one side of the bowl cavity of the LED packaging structure provided by this utility model. White glue is coated on the side of the bowl cavity. White glue usually has a high reflectivity, which can effectively reflect the light emitted by the LED chip, reduce the absorption and scattering of light inside the package, and thus improve the light extraction efficiency. At the same time, white glue usually has a certain thermal conductivity, which can conduct the heat generated by the LED chip to other parts of the package, and then dissipate it to the external environment through the heat dissipation structure, thereby reducing the operating temperature of the chip and improving the stability and service life of the LED.

[0025] 10. This utility model also provides a display device, including a carrier device and an LED encapsulation structure as described above disposed on the carrier device, which has the same beneficial effects as the LED encapsulation structure described above, and will not be described in detail here. [Attached Image Description]

[0026] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0027] Figure 1 This is a schematic diagram of the LED packaging structure provided in the first embodiment of this utility model.

[0028] Figure 2 yes Figure 1 A magnified view of A in the middle.

[0029] Figure 3 This is a comparison diagram of the emission spectrum of the LED packaging structure provided in the first embodiment of this utility model and that of ordinary LED beads.

[0030] Figure 4 This is a schematic diagram of the LED chip structure of the LED packaging structure provided in the first embodiment of this utility model.

[0031] Figure 5 This is a schematic diagram of the structure of the display device provided in the second embodiment of the present invention.

[0032] Explanation of reference numerals in the attached diagram:

[0033] 1. LED packaging structure; 2. Display device;

[0034] 10. Bracket; 11. LED chip; 12. Encapsulating adhesive layer; 20. Supporting device;

[0035] 100. White adhesive; 101. Bowl cavity; 102. Substrate; 110. Blue quantum well layer; 111. Green quantum well layer; 112. Buffer layer; 113. Substrate; 114. P-region; 115. N-region; 116. Positive electrode; 117. Negative electrode.

Detailed Implementation Methods

[0036] To make the objectives, technical solutions, and advantages of this utility model clearer, the present utility model will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present utility model and are not intended to limit the scope of the present utility model.

[0037] It should be noted that when a component is said to be "fixed to" another component, it can be directly attached to the other component or there may be an intervening component. When a component is said to be "connected to" another component, it can be directly connected to the other component or there may be an intervening component. The terms "vertical," "horizontal," "left," "right," and similar expressions used in this document are for illustrative purposes only.

[0038] In this invention, the terms "upper," "lower," "left," "right," "front," "rear," "top," "bottom," "inner," "outer," "middle," "vertical," "horizontal," "lateral," and "longitudinal" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. These terms are primarily for the purpose of better describing this invention and its embodiments, and are not intended to limit the indicated device, element, or component to having a specific orientation, or to be constructed and operated in a specific orientation.

[0039] Furthermore, in addition to indicating direction or positional relationship, some of the aforementioned terms may also have other meanings. For example, the term "above" may also be used in some cases to indicate a certain dependency or connection relationship. Those skilled in the art can understand the specific meaning of these terms in this utility model according to the specific circumstances.

[0040] Furthermore, the terms "installation," "setup," "equipped with," "connection," and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral structure; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium, or an internal connection between two devices, components, or parts. Those skilled in the art can understand the specific meaning of these terms in this utility model based on the specific circumstances.

[0041] Please refer to Figure 1 and Figure 4 The first embodiment of this utility model provides an LED packaging structure 1 including a support 10, an LED chip 11 disposed on the support 10, and an encapsulating adhesive layer 12 for encapsulating the LED chip 11. The LED chip 11 has a multi-layer structure, including a blue quantum well layer 110 and a green quantum well layer 111 disposed sequentially, with a buffer layer 112 disposed between the blue quantum well layer 110 and the green quantum well layer 111. The LED chip 11 has blue and green quantum wells in its light-emitting area, and can output blue and green light simultaneously. The green light has a narrower half-width, which can improve the color gamut to NTSC. The efficiency is 100-115%. A buffer layer 112 is provided between the blue quantum well layer 110 and the green quantum well layer 111. The buffer layer 112 is mainly used to separate the blue quantum well layer 110 and the green quantum well layer 111. Because the quantum efficiency of the green quantum well layer 111 and the blue quantum well layer 110 differs under different currents, a severe color drift phenomenon will occur due to the change in the energy ratio of blue light to green light when the current is changed. The electron concentration in the buffer layer 112 is much higher than the hole concentration. The holes in the P-type semiconductor in the LED chip 11 are recombinated before migrating to the green quantum well. Therefore, the holes in the blue quantum well layer 110 (electroluminescent region) will not be transmitted to the green quantum well layer 111 region (photoluminescent region), preventing electroluminescence in the green quantum well region and avoiding the problem of uneven blue and green light energy under changing current conditions, thus improving the final display effect.

[0042] For details, please refer to Figure 3 In the figure, N is the spectrum of the control group, and M is the spectrum of the LED packaging structure 1 provided in the first embodiment of the present invention. The control group is an ordinary LED lamp bead. As can be seen from the spectrum, the spectral width of the LED packaging structure 1 provided in the first embodiment of the present invention is relatively narrower than that of the control group. According to engineering experience, the smaller the half-width of blue, green and red of the LED lamp bead, the more concentrated the energy in the corresponding band is, and the more colors can be expressed on the display screen, that is, the higher the color gamut.

[0043] Specifically, the bracket 10 also includes a substrate 102, which provides a stable electrical connection for the LED chip 11.

[0044] Specifically, the LED chip 11 also includes a substrate 113, which serves as the basic structure of the LED chip 11 and provides a flat and stable support surface for the epitaxial layer, ensuring that the green quantum well layer 111 and the blue quantum well layer 110 can be deposited uniformly and flatly during the growth process, thereby ensuring the overall structural integrity and stability of the chip.

[0045] Furthermore, the blue quantum well layer 110 uses electroluminescence, while the green quantum well layer 111 uses photoluminescence. The two quantum well layers use different light emission principles because the energy of blue and green light is uneven under changing current conditions. When both blue and green light use electroluminescence (i.e., blue and green quantum well layers overlap or there is no buffer layer design), the quantum efficiency of the green quantum well layer 111 and the blue quantum well layer 110 is different under different currents. Therefore, when the current is changed, a serious color drift phenomenon will occur due to the change in the energy ratio of blue and green light. When a buffer layer 112 is added, the green quantum well layer 111 does not participate in the electroluminescence process. As the blue light energy increases, more blue light is converted into green light energy after passing through the green quantum well layer 111. Since the green quantum well layer 111 uses photoluminescence, the energy ratio of green and blue light remains almost unchanged, resulting in a better final display effect.

[0046] Furthermore, the buffer layer 112 is an N-type gallium nitride layer or an intrinsic gallium nitride layer; using N-type gallium nitride or intrinsic gallium nitride can provide electrons in the LED structure, construct PN junctions, etc., and is the core component of LED light emission, and is a key factor in achieving efficient light emission, stable operation and high performance.

[0047] For details, please refer to Figure 4 The LED chip 11 includes a common semiconductor P-region 114 and a semiconductor N-region 115, and is also provided with a positive electrode 116 and a negative electrode 117 for electrical connection with the substrate 102.

[0048] Further, please refer to Figure 2 The thickness of the buffer layer 112 (e.g.) Figure 3 The range of H shown is 0.1nm-1nm; to ensure that the buffer layer 112 has a certain thickness, so that holes in the P-type region will not be transmitted to the green quantum well region, and to ensure that the green quantum well layer 111 emits light by the principle of photoluminescence, thus preventing the generation of blue-green light emission energy differences.

[0049] Furthermore, the LED chip 11 is one of the following types: upright chip, vertical chip, and flip chip. Upright chip, vertical chip, and flip chip are three commonly used chip structures for LEDs. The structure of the multilayer quantum well in the LED packaging structure 1 provided in the first embodiment of this utility model, which includes a buffer layer 112, is adaptable to various types of LED chips 11 and has wide applicability.

[0050] Furthermore, the encapsulating layer 12 is a red phosphor encapsulating layer; adding red phosphor enables the LED encapsulation structure 1 to simultaneously produce red light, satisfying the requirements of the three primary colors of light emission.

[0051] Specifically, phosphors include one or more of the following systems: fluoride system, aluminate system, phosphate system, orthosilicate system, borate system, and oxide-based system. Using the above materials as luminescent materials has the characteristics of stable properties and sufficient luminous energy, and can reliably absorb other light energy to produce red light.

[0052] Specifically, the amount of phosphor added is 20%-120% of the weight of the encapsulating adhesive; the amount of phosphor is required to ensure the continuity and stability of red light generation, which helps to improve the overall luminescence effect.

[0053] Furthermore, the encapsulating layer 12 also includes a green phosphor encapsulating layer; mixing an appropriate amount of green phosphor into the encapsulating layer 12 can enhance the luminous energy of green light, increase brightness without losing color gamut, and help improve the final display effect.

[0054] Further, please refer to Figure 1 The bracket 10 has a bowl-shaped structure with a bowl cavity 101. The LED chip 11 and encapsulating adhesive are placed inside the bowl cavity 101. The bowl cavity 101 of the bracket 10 can effectively reflect and concentrate the light emitted by the LED chip 11, making the light more concentrated and emitted in a specific direction, thereby improving the light output efficiency and light intensity. At the same time, the special bowl-shaped structure can provide effective heat dissipation, which can reduce the operating temperature of the LED chip 11 and reduce the impact of thermal stress on the chip, thereby improving the luminous efficiency, stability and lifespan of the LED.

[0055] Furthermore, the side of the LED chip 11 inside the cavity 101 is coated with white glue 100. White glue 100 typically has a high reflectivity, which can effectively reflect the light emitted by the LED chip 11, reducing the absorption and scattering of light inside the package, thereby improving the light extraction efficiency. At the same time, white glue 100 typically has a certain thermal conductivity, which can conduct the heat generated by the LED chip 11 to other parts of the package, and then dissipate it to the external environment through the heat dissipation structure, thereby reducing the operating temperature of the chip and improving the stability and lifespan of the LED.

[0056] Optionally, a reflective film layer can be provided on the side of the bowl cavity 101 where the LED chip 11 is located, that is, white ink or white reflective paper is covered on the substrate 102 to reflect light, which can make the overall brightness higher.

[0057] Please refer to Figure 5The second embodiment of this utility model also provides a display device 2, including a carrier device 20 and an LED encapsulation structure 1 as described in the first embodiment disposed on the carrier device 20, which has the same beneficial effects as the LED encapsulation structure 1 described above, and will not be described in detail here.

[0058] Optionally, the display device 2 can be applied to 3C electronic products and their accessories such as mobile phones and mobile phone cases, or to the surface of products such as home appliances and automobiles, or to smart pens and smart wearable products; depending on different application scenarios, the setting method and number of LED packaging structures 1 on the carrier device 20 are not limited.

[0059] Compared with the prior art, the LED packaging structure and display device of this utility model have the following advantages:

[0060] 1. The LED packaging structure of this utility model includes a support, an LED chip disposed on the support, and an encapsulating adhesive layer for encapsulating the LED chip; the LED chip has a multi-layer structure, including a blue quantum well layer and a green quantum well layer disposed sequentially, with a buffer layer disposed between the blue and green quantum well layers; the light-emitting area of ​​this LED chip has blue and green quantum wells, and can simultaneously output blue and green light, wherein the green light has a narrower half-width, which can improve the color gamut to 100%~115% of NTSC; at the same time, a buffer layer is disposed between the blue and green quantum well layers, the buffer layer mainly serving to separate them. The blue and green quantum well layers have different quantum efficiencies under different currents. Therefore, when the current is changed, a severe color drift phenomenon will occur due to the change in the energy ratio of blue and green light. However, the electron concentration in the buffer layer is much higher than the hole concentration. The holes in the P-type semiconductor in the LED chip are recombinated before they migrate to the green quantum well. Therefore, the holes in the blue quantum well layer (electroluminescent region) will not be transported to the green quantum well layer region (photoluminescent region), so that the green quantum well region will not produce electroluminescence. Thus, the problem of uneven blue and green light energy under changing current will not occur.

[0061] 2. The blue quantum well layer of the LED packaging structure provided by this utility model adopts electroluminescence, and the green quantum well layer adopts photoluminescence. The two quantum wells adopt different light emission principles because the energy of blue and green light is not uniform under the condition of current change. When both blue and green light adopt the principle of electroluminescence (i.e., blue and green quantum well layers overlap each other or there is no buffer layer design), the quantum efficiency of green and blue quantum well layers is different under different currents. Therefore, when the current is changed, a serious color drift phenomenon will occur due to the change in the energy ratio of blue and green light. When a buffer layer is added, the green quantum well layer does not participate in the electroluminescence process. As the blue light energy increases, more blue light passes through the green quantum well layer and is converted into green light energy. The green quantum well layer adopts photoluminescence, so the energy ratio of green and blue light is almost unchanged, resulting in a better final display effect.

[0062] 3. The buffer layer of the LED packaging structure provided by this utility model is an N-type gallium nitride layer or an intrinsic gallium nitride layer; the use of N-type gallium nitride or intrinsic gallium nitride can provide electrons in the LED structure, construct PN junctions, etc., and is the core component of LED light emission, and is a key factor in achieving efficient light emission, stable operation and high performance.

[0063] 4. The thickness range of the buffer layer in the LED packaging structure provided by this utility model is 0.1nm-1nm; ensuring that the buffer layer has a certain thickness, so that holes in the P-type region will not be transmitted to the green quantum well region, ensuring that the green quantum well layer emits light by the principle of photoluminescence, and preventing the generation of blue-green light emission energy difference.

[0064] 5. The LED chip type of the LED packaging structure provided by this utility model is one of the following: upright chip, vertical chip, and flip chip. Upright chip, vertical chip, and flip chip are three commonly used chip structures for LEDs. The multilayer quantum well structure provided by this utility model, which includes a buffer layer, is compatible with various LED chip types and has wide applicability.

[0065] 6. The encapsulating adhesive layer of the LED encapsulation structure provided by this utility model is a red phosphor encapsulating adhesive layer; adding red phosphor enables the LED encapsulation structure to generate red light simultaneously, satisfying the requirements of the three primary colors of light emission.

[0066] 7. The encapsulating adhesive layer of the LED encapsulation structure provided by this utility model also contains green phosphor; mixing an appropriate amount of green phosphor into the encapsulating adhesive layer can enhance the luminous energy of green light, increase brightness without losing color gamut, and help improve the final display effect.

[0067] 8. The LED packaging structure provided by this utility model has a bowl-shaped support with a bowl cavity. The LED chip and encapsulating adhesive are placed inside the bowl cavity. The bowl cavity support can effectively reflect and concentrate the light emitted by the LED chip, making the light more concentrated and emitted in a specific direction, thereby improving the light output efficiency and light intensity. At the same time, the special bowl-shaped structure can provide effective heat dissipation, which can reduce the operating temperature of the LED chip and reduce the impact of thermal stress on the chip, thereby improving the luminous efficiency, stability and service life of the LED.

[0068] 9. The LED chip is disposed on one side of the bowl cavity of the LED packaging structure provided by this utility model. White glue is coated on the side of the bowl cavity. White glue usually has a high reflectivity, which can effectively reflect the light emitted by the LED chip, reduce the absorption and scattering of light inside the package, and thus improve the light extraction efficiency. At the same time, white glue usually has a certain thermal conductivity, which can conduct the heat generated by the LED chip to other parts of the package, and then dissipate it to the external environment through the heat dissipation structure, thereby reducing the operating temperature of the chip and improving the stability and service life of the LED.

[0069] 10. This utility model also provides a display device, including a carrier device and an LED encapsulation structure as described above disposed on the carrier device, which has the same beneficial effects as the LED encapsulation structure described above, and will not be described in detail here.

[0070] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions and improvements made within the principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. An LED packaging structure, characterized in that: The LED packaging structure includes a bracket, an LED chip disposed on the bracket, and an encapsulating adhesive layer for encapsulating the LED chip; the LED chip has a multi-layer structure, and the LED chip includes a blue quantum well layer and a green quantum well layer disposed sequentially, with a buffer layer disposed between the blue quantum well layer and the green quantum well layer.

2. The LED packaging structure according to claim 1, characterized in that: The blue quantum well layer uses electroluminescence, and the green quantum well layer uses photoluminescence.

3. The LED packaging structure according to claim 1, characterized in that: The buffer layer is an N-type gallium nitride layer or an intrinsic gallium nitride layer.

4. The LED packaging structure according to claim 3, characterized in that: The thickness of the buffer layer ranges from 0.1 nm to 1 nm.

5. The LED packaging structure according to claim 1, characterized in that: The LED chip is one of the following types: upright chip, vertical chip, and flip chip.

6. The LED packaging structure according to claim 1, characterized in that: The encapsulating adhesive layer is a red phosphor encapsulating adhesive layer.

7. The LED packaging structure according to claim 6, characterized in that: The encapsulating adhesive layer is a mixture of red and green phosphors.

8. The LED packaging structure according to claim 1, characterized in that: The bracket has a bowl-shaped structure with a bowl cavity, and the LED chip and the encapsulating adhesive are disposed inside the bowl cavity.

9. The LED packaging structure according to claim 8, characterized in that: The side of the bowl cavity where the LED chip is located is coated with white glue.

10. A display device, characterized in that: It includes a carrier device and an LED encapsulation structure as described in any one of claims 1-9 disposed on the carrier device.

Images