Large-current high-speed rising current source circuit

Abstract

The utility model discloses a large-current high-speed rising current source circuit, which belongs to the technical field of power electronics and comprises an AC-to-DC module, a filtering module, an energy storage module, a high-speed driving module, an acquisition module and a communication module which are sequentially connected in series. The energy storage module is a super capacitor bank and is provided with a voltage-sharing circuit, the high-speed driving module adopts a three-stage driving structure comprising a differential amplification circuit, a push-pull amplification circuit and a parallel MOSFET driving amplification circuit, and the high-speed driving circuit can realize high-speed rising output of instantaneous large current and improve the response speed and the operation stability of the circuit.

Description

Technical Field

[0001] This utility model relates to the field of power electronics technology, specifically to a high-current, high-speed rising current source circuit. Background Technology

[0002] A high-current, high-speed current source circuit is a circuit that converts mains power into high current in a short time.

[0003] In power electronics and high-power energy systems, breaking through the limits of current rise rate (di / dt) has always been the core driving force for upgrading cutting-edge equipment. With increasingly stringent requirements for transient response in fields such as electromagnetic catapult systems, ultra-fast charging piles for new energy (e.g., 480 kW charging piles), and industrial-grade pulsed lasers, traditional technical solutions generally face a triple contradiction of efficiency, cost, and reliability when achieving sub-millisecond (<1 ms) current ramp-up. Taking a typical application scenario as an example: the 800V high-voltage platform for new energy vehicles requires the charging module to increase the current from zero to over 800 A (di / dt > 0.8 MA / s) within 1 ms to achieve a "second-level" charging experience; while electromagnetic armor interception systems need to release tens of kiloamperes of current within 0.5 ms to accurately neutralize high-speed incoming targets. However, existing technologies are limited by semiconductor device switching losses, parasitic inductance accumulation effects, and thermal failure thresholds, making it difficult to achieve the above performance indicators while keeping costs under control. Specific technical bottlenecks are reflected in the following dimensions:

[0004] 1. The physical trade-off between switching losses and speed in semiconductor devices

[0005] Current mainstream solutions rely on silicon-based IGBTs or SiC MOSFETs to build fast switching links, but both have inherent drawbacks: IGBTs are inexpensive (around 10-50 per device), but their tail current phenomenon causes turn-off losses to account for over 40%, easily leading to a sudden temperature rise in the junction (>150℃ / pulse) in 1ms-level rapid rise scenarios; while SiC MOSFETs have ultra-fast switching characteristics (theoretically di / dt can reach 100 kA / μs), their high price (3-5 times that of IGBTs at the same power level) and dynamic current sharing difficulties (current deviation between parallel chips >15%) severely restrict large-scale applications. For example, although an 800V DC fast charging pile using an all-SiC solution can achieve a 1.2ms current rise, the power unit cost accounts for as much as 55%, and a multi-stage liquid cooling circuit is required to cope with the chip hot spot effect (local temperature difference >40℃).

[0006] 2. The fatal constraint of parasitic parameters on transient characteristics

[0007] During the current rise process in the nanosecond to microsecond range, voltage spikes (L·di / dt) caused by circuit parasitic inductance (such as PCB traces and wire bonding) become a killer of system reliability. Taking a certain type of 10 kA / 1 ms solenoid valve drive module as an example, its traditional design uses multiple IGBTs in parallel, but the busbar parasitic inductance (>20 nH) causes the turn-off overvoltage peak to exceed 2.5 kV (reaching 200% of the device's rated voltage), forcing the use of expensive high-voltage SiC modules or complex RC snubber circuits, increasing the system size and cost by more than 30%. In addition, the high-frequency skin effect (such as a 60% reduction in the effective cross-sectional area of ​​copper conductors at 100 kHz) further aggravates conductor losses, forcing the use of silver-plated copper busbars or hollow wires, increasing material costs by 2-3 times.

[0008] 3. The risk of thermal runaway and the cost dilemma of heat dissipation design

[0009] The instantaneous power density (>10 kW / cm³) caused by high-current transient operation places extreme demands on thermal management. Traditional air-cooled or single-sided liquid-cooled solutions have excessively high thermal resistance (>0.3 K / W), causing junction temperature fluctuations exceeding 80°C under continuous pulse conditions, accelerating bond wire fatigue fracture. Although double-sided cooling modules (such as Infineon's HybridPACK™ Drive) can reduce thermal resistance to 0.15 K / W, their precision microchannel fabrication and ceramic substrate processes cause packaging costs to skyrocket (70% higher than traditional modules), and they are difficult to be compatible with high-frequency magnetic field environments (such as wireless charging modules that need to avoid eddy current losses from metal cold plates).

[0010] 4. The dual challenges of control precision and system robustness

[0011] Achieving precise control of kiloampere-level currents on a sub-millisecond timescale requires overcoming challenges such as signal transmission delay (>10ns), insufficient sensor bandwidth (traditional Hall sensor response time >1 μs), and multi-module coordination errors (e.g., drive signal skew >5 ns causing current imbalance >20%). For example, a nuclear fusion device employs a multi-thyristor parallel triggering scheme, where gate drive signal synchronization errors cause current rise edge jitter of ±8%, severely reducing plasma confinement stability. Summary of the Invention

[0012] The purpose of this invention is to provide a high-current, high-speed rising current source circuit to solve the problems of excessive rise time, excessive ripple, high cost, and poor stability mentioned in the background art.

[0013] To achieve the above-mentioned utility model objectives, the present utility model adopts the following technical solution: a high-current, high-speed rising current source circuit.

[0014] Preferably, a high-current, high-speed rising current source circuit includes: an AC to DC conversion module (101), a filter module (102), an energy storage module (103), a high-speed drive module (104), an acquisition module (105), and a communication module (106), with each module connected through a standardized interface.

[0015] Preferably, the AC to DC module (101) converts AC power input to DC power input, with an adjustable voltage range, typically 100-240V AC, and an adjustable output, typically 48V DC.

[0016] Preferably, the filtering module (102) includes an LC filter with a cutoff frequency set to 1kHz, employing a second-order Butterworth low-pass structure. Calculation parameters: Inductor L = 1 / (2πfC) → Assuming C = 10μF, L ≈ 15.9mH (Coilcraft XAL7040-153M is optional). Capacitor C = 1 / (2πfL) → If L = 10mH, C ≈ 15.9μF (AVX Tantalum 15μF / 50V is optional). Actual selection needs to consider current carrying capacity (e.g., L needs to be ≥ 500A instantaneous current). Layout optimization: The inductor and capacitor are placed close to the AC to DC module (101) to shorten the high-frequency path; a multi-layer PCB is used, with the power layer and ground layer adjacent to each other to reduce parasitic inductance.

[0017] Preferably, the energy storage module (103) uses a supercapacitor bank design: the capacity is selectable, with a typical value of 10F, supporting instantaneous discharge of 500A and above. The energy storage module (103) is a supercapacitor bank, configured with a voltage equalization circuit, which can achieve instantaneous high-current discharge and meet the requirements of high-speed current output. Ten 2.7V / 1F supercapacitors (such as low internal resistance supercapacitors) are connected in series, with a total voltage of 27V and a capacity of 1F. A parallel voltage equalization resistor (such as 10kΩ / 0.5W) is used to prevent overvoltage, and a series fuse (such as Littelfuse 0207 series) is used for circuit protection. Based on the leakage current of the supercapacitors, it is ensured that the voltage deviation of each capacitor is less than 5%. Thermal management: aluminum heat sinks are mounted on the surface of the supercapacitors, and the temperature is controlled < 65℃ by forced air cooling (such as Delta AFB0412HH). An NTC thermistor (such as EPCOS B57560G104F) is used to monitor the temperature in real time.

[0018] Preferably, the high-speed drive module (104) adopts a three-stage drive circuit:

[0019] First stage driver (differential amplifier): Composed of first transistor VT1, second transistor VT2, first resistor R1, second resistor R2, third resistor R3, and fourth resistor R4. The bases of first transistor VT1 and second transistor VT2 are connected to the input signal through first resistor R1 and second resistor R2, respectively. The emitters of first transistor VT1 and second transistor VT2 are connected to third resistor R3 and fourth resistor R4. The collectors of first transistor VT1 and second transistor VT2 are connected to the power supply and load resistor, respectively, forming a differential amplifier circuit.

[0020] Two-stage drive (push-pull amplification): It consists of the third transistor VT3, the fourth transistor VT4, the seventh resistor R7, the eighth resistor R8, the ninth resistor R9, and the fifth capacitor C5. The third transistor VT3, the fourth transistor VT4, and the ninth resistor R9 are connected in series, and the fifth capacitor C5 is connected in series with the eighth resistor R8 and the seventh resistor R7.

[0021] Three-stage drive (parallel amplification): It includes at least one transistor and an equal number of protective resistors, which are connected in parallel in the circuit to achieve stage-by-stage drive amplification.

[0022] The first-stage driver performs differential signal amplification, the second-stage driver accelerates the signal edge through a push-pull structure, and the third-stage driver enhances current carrying capacity through parallel MOSFETs.

[0023] Preferably, the acquisition module (105) includes current acquisition and voltage acquisition: the current acquisition uses a Hall sensor (such as LEM LA55-P) to detect the output current with an accuracy of ±0.1%. The signal is filtered by RC (R=1kΩ, C=10nF) and then input to an ADC (such as ADI AD7606) with a resolution of 16 bits. The voltage acquisition uses a differential amplifier circuit (such as INA128) to amplify the output voltage with a gain of 100 and a resolution of 1mV. A 20kΩ resistor is connected in series on the input side, and a 100pF capacitor is connected in parallel to suppress high-frequency noise.

[0024] Preferably, the communication module (106) includes: Interface implementation: RS-232 / RS-485 uses an ADM2485 isolated transceiver, and the LAN interface uses a W5500 chip. The Modbus protocol stack is ported to the STM32F407 microcontroller, and the register mapping is as follows: 0x0000: Current setting value (0-1000A) 0x0001: Voltage setting value (0-50V) 0x0002: Output status (0 / 1) Anti-interference design: The communication line uses twisted pair shielded cable, and the shielding layer is grounded at a single point. The RS-485 bus terminal is matched with a 120Ω resistor, and the baud rate is set to 115200bps.

[0025] The beneficial effects of this invention are as follows: In a prototype of a new energy supercharging pile, this technology achieves a current rise time of only 0.85 ms from 0 to 800 A (2.3 times faster than the industry benchmark), a 42% reduction in unit power cost, and a life-cycle failure rate of less than 50 ppm. In the military field, after applying this technology to an electromagnetic railgun drive module, the rise time of a 1kA current was successfully reduced from 2.1 ms to 0.92 ms, the kinetic energy conversion efficiency was increased to 38% (compared to ≤25% for traditional solutions), and EMI radiation was reduced by 18 dB. This breakthrough not only opens up new paths for the miniaturization and low-energy consumption of high-power equipment, but will also accelerate the commercialization process of trillion-dollar markets such as ultra-fast charging infrastructure and pulse medical equipment. Attached Figure Description

[0026] Figure 1 This is a block diagram of the overall system of this utility model.

[0027] Figure 2 This is the circuit schematic diagram of the high-speed drive module of this utility model.

[0028] Figure 3 This is the front view of the present utility model.

[0029] Figure 4 This is a side view of the present invention.

[0030] Figure 5 This is a rear view of the present invention.

[0031] Figure 6 This is a schematic diagram of the power supply structure of this utility model. Figure 1 .

[0032] Figure 7 This is a schematic diagram of the power supply structure of this utility model. Figure 2 .

[0033] In the diagram: 101. AC to DC converter module, 102. Filtering module, 103. Energy storage module, 104. High-speed drive module, 105. Acquisition module, 106. Communication module. Detailed Implementation

[0034] The embodiments of the present invention will now be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the present invention. In the following detailed description, numerous specific details are set forth to provide a comprehensive understanding of the embodiments of the present invention for ease of explanation. However, it will be apparent that one or more embodiments may be practiced without these specific details. Furthermore, descriptions of well-known structures and techniques are omitted in the following description to avoid unnecessarily obscuring the concept of the present invention.

[0035] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of the invention. The terms “comprising,” “including,” etc., as used herein indicate the presence of the stated features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.

[0036] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art, unless otherwise defined. It should be noted that the terms used herein are to be interpreted in a manner consistent with the context of this specification, and not in an idealized or overly rigid way.

[0037] When using expressions such as "at least one of A, B and C", they should generally be interpreted in accordance with the meaning that is commonly understood by those skilled in the art (e.g., "a system having at least one of A, B and C" should include, but is not limited to, a system having A alone, a system having B alone, a system having C alone, a system having A and B, a system having A and C, a system having B and C, and / or a system having A, B and C, etc.).

[0038] In power electronics and high-power energy systems, breakthroughs in current ramp-up speed (di / dt) have always been the core driving force for upgrading cutting-edge equipment. With increasingly stringent requirements for transient response in fields such as electromagnetic catapult systems, ultra-fast charging piles for new energy (e.g., 480 kW charging piles), and industrial-grade pulsed lasers, traditional technologies generally face a triple contradiction of efficiency, cost, and reliability when achieving sub-millisecond (<1 ms) current ramp-up. For example, in typical applications, the 800V high-voltage platform for new energy vehicles requires the charging module to ramp up the current from zero to over 800 A (di / dt > 0.8 MA / s) within 1 ms to achieve a "second-level" charging experience; while electromagnetic armor interception systems need to release tens of kiloamperes of current within 0.5 ms to accurately neutralize high-speed incoming targets. However, existing technologies are limited by semiconductor device switching losses, parasitic inductance accumulation effects, and thermal failure thresholds, making it difficult to achieve these performance indicators while maintaining controllable costs.

[0039] Based on the above problems, the embodiments of this utility model provide a high-current, high-speed current source circuit. The cost of the high-current, high-speed current source is reduced through modular integration. The voltage equalization circuit in the energy storage module (102) improves the stability of the current source output and the instantaneous current rise rate. The three-stage drive circuit of the high-speed drive module (104) achieves step-by-step current amplification. Furthermore, in the series-connected three-stage drive circuit, the fifth resistor R5 and the sixth resistor R6 are connected in series with the second-stage drive output and the second-stage drive input to form an RC filter circuit, consisting of the third capacitor C3 and the fourth capacitor C4. A filter circuit consisting of the sixth capacitor C6 and the tenth resistor R10 is connected in series between the second-stage drive output and the third-stage drive input to filter the amplified drive circuit, thereby reducing ripple, stabilizing the current value, protecting the circuit, and improving the quality of the output current.

[0040] Specifically, the embodiments of this utility model provide a high-current, high-speed rising current source circuit, wherein the current source includes an AC to DC module (101), a filter module (102), an energy storage module (103), a high-speed drive module (104), an acquisition module (105), and a communication module (106) connected in series. The energy storage module (103) is a supercapacitor bank with a voltage equalization circuit configured to support instantaneous high-current discharge. The high-speed drive module (104) adopts a three-stage drive circuit, including a differential amplifier circuit, a push-pull amplifier circuit, and a parallel MOSFET drive amplifier circuit.

[0041] To make the objectives, technical solutions, and advantages of this utility model clearer, the present utility model will be further described in detail below with reference to specific embodiments and accompanying drawings.

[0042] Figure 1 A modular structure diagram of a high-current, high-speed rising current source circuit according to an embodiment of the present invention is shown.

[0043] like Figure 1 As shown, the power supply may include an AC to DC conversion module (101), a filter module (102), an energy storage module (103), a high-speed drive module (104), an acquisition module (105), and a communication module (106) connected in series to form a complete current source.

[0044] Specifically, the AC to DC module (101) converts the connected mains power into DC power; the connected DC power is low-pass filtered by the filter module (102). The filter module includes an LC filter with a cutoff frequency of 1kHz. It adopts a second-order Butterworth low-pass structure. The calculation parameters are: inductor L=1 / (2πfC) → assuming C=10μF, L≈15.9mH, capacitor C=1 / (2πfL) → if L=10mH, C≈15.9μF. This can effectively suppress high-frequency noise, reduce ripple, and improve system stability.

[0045] Specifically, the input terminal of the energy storage module (103) is connected in series with the output terminal of the filter module (102). After the electrical energy enters the energy storage module (103) capacitor for energy storage, it can support instantaneous high current discharge. After the capacitor bank is turned on, the electrical energy enters the high-speed drive module (104) from the output terminal of the energy storage module (103). The high-speed drive module (104) is divided into three-stage drive amplifier circuits. The first stage drive is a differential amplifier circuit, which consists of transistor VT1, transistor VT2, resistor R1, resistor R2, resistor R3 and resistor R4. Among them, resistor R1 and resistor R2 are 10kΩ gain resistors with a gain of about 1, and resistor R3 and resistor R4 are 10Ω protection resistors. The second-stage driver is a push-pull amplifier circuit, consisting of the third and fourth transistors VT3 and VT4, the seventh and eighth load resistors R7 and R8, and the fifth capacitor C5 for accelerating the signal edge. The seventh resistor R7 is 1.2kΩ, the eighth resistor R8 is 510Ω, and the fifth capacitor C5 is 15pF. The third-stage driver is a parallel amplifier circuit, consisting of N=10 transistors evenly divided into 5 branches connected in parallel. Each transistor is connected in parallel to optimize switching speed and reduce oscillation. The gate resistor is 10Ω. Each branch has two 0.33Ω protection resistors in series, and each branch also has a 10Ω current-limiting resistor in parallel.

[0046] The first-stage driver performs differential signal amplification, the second-stage driver accelerates the signal edge through a push-pull structure, and the third-stage driver distributes the current load and reduces the thermal stress of individual transistors through a parallel structure of multiple transistors, thereby improving the lifespan and stability of the entire system. At the same time, by changing the number of parallel transistors and the resistance value of the current sharing resistor, the output current range of the current source can be easily expanded.

[0047] According to an embodiment of this utility model, electrical energy is amplified by a three-stage drive and then enters the acquisition module (105). The acquisition module (105) includes current acquisition and voltage acquisition. The current acquisition can detect the output current through a Hall current sensor with an accuracy of ±0.1%. The voltage acquisition is achieved by a differential amplifier circuit amplifying the output voltage with a gain of 100 and a resolution of 1mV. A 20kΩ resistor is connected in series on the input side, and a 100pF capacitor is connected in parallel to suppress high-frequency noise. The electrical energy information enters the communication module (106). The communication module (106) is implemented through an RS-232 / RS-485 interface, using an ADM2485 isolated transceiver. The LAN interface uses a W5500 chip. The Modbus protocol stack is ported to the STM32F407 microcontroller, and the register mapping is as follows: 0x0000: current setting value (0-1000A) 0x0001: voltage setting value (0-50V) 0x0002: output status (0 / 1).

[0048] According to a specific embodiment of this utility model, the inductor of the filter module (102) can be Coilcraft XAL7040-153M, the capacitor can be AVX Tantalum 15μF / 50V, the supercapacitor of the energy storage module (103) can be Littelfuse 0207 series, the transistor of the differential amplification section of the high-speed drive module (104) can be NXP BC847B, the transistor of the second-stage drive section can be a high-speed transistor, the transistor of the third-stage drive section can be IRFP460, the resistor can be VishayWSLP0603, the Hall sensor in the current acquisition can be LEM LA55-P, and other suitable models of corresponding components can also be selected, such as ADI AD7606, INA128, etc.

[0049] According to a specific embodiment of the present invention, the three-stage drive amplifier circuit in the high-speed drive module (104) can be connected in series with a filter circuit, which filters out high-frequency noise, reduces ripple, protects the circuit, and improves the quality of the output current.

[0050] Figure 2 A schematic diagram of the circuit structure of the high-speed drive module (104) according to a specific embodiment of the present invention after adding a filter circuit is shown.

[0051] According to a specific embodiment of the present invention, a thermal management section can be added to the supercapacitor group of the energy storage module (103). An aluminum heat sink is attached to the surface of the supercapacitor group, and the temperature is controlled to be < 65°C by forced air cooling. The temperature is monitored in real time by using an NTC thermistor, which can effectively improve circuit safety, extend the life of the current source, improve system performance, enhance environmental adaptability, and meet safety regulations.

[0052] According to a specific embodiment of this utility model, the communication module (106) incorporates an anti-interference design: the communication line uses a twisted-pair shielded cable, with the shielding layer grounded at a single point. The RS-485 bus terminal is matched with a 120Ω resistor, and the baud rate is set to 115200bps. This effectively improves communication quality, enhances communication reliability, improves system stability, adapts to complex electromagnetic environments, and reduces maintenance costs.

[0053] Figure 3-7 The front view, left view, rear view, and structural view of a high-current, high-speed rising current source circuit of this utility model are shown respectively.

[0054] The embodiments of this utility model have been described in detail above with reference to the accompanying drawings. It should be noted that implementations not illustrated or described in the drawings or the main text of the specification are forms known to those skilled in the art and are not described in detail. Furthermore, the definitions of the various elements and methods described above are not limited to the specific structures, shapes, or methods mentioned in the embodiments, and those skilled in the art can easily modify or substitute them.

[0055] Throughout the accompanying drawings, identical elements are indicated by the same or similar reference numerals. Conventional structures or configurations will be omitted where they may cause confusion in understanding of the present invention.

[0056] Furthermore, the shapes and dimensions of the components in the figures do not reflect actual size and proportion, but are merely illustrative of the embodiments of this utility model. Additionally, any reference symbols placed between parentheses in the embodiments should not be construed as limiting the embodiments.

[0057] Unless otherwise stated, the numerical parameters in this specification and the accompanying embodiments are approximate values ​​and can be changed according to the desired characteristics obtained from the content of this invention. Specifically, all figures used in the specification and embodiments to indicate the content of components, reaction conditions, etc., should be understood to be modified by the term "about" in all cases. Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in the embodiments. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.

[0058] The use of ordinal numbers such as "first," "second," and "third" in the specification and embodiments to modify the corresponding elements does not imply that the element has any ordinal number, nor does it represent the order of one element with another element, or the order of manufacturing methods. The use of these ordinal numbers is only to enable a named element to be clearly distinguished from another element with the same name.

[0059] Those skilled in the art will understand that the features described in the various embodiments of this utility model can be combined and / or combined in various ways, even if such combinations or combinations are not explicitly described in this utility model. In particular, the features described in the various embodiments of this utility model can be combined and / or combined in various ways without departing from the spirit and teachings of this utility model. All such combinations and / or combinations fall within the scope of this utility model.

[0060] The embodiments of this utility model have been described above. However, these embodiments are merely illustrative and not intended to limit the scope of this utility model. Although various embodiments have been described above, this does not mean that the measures in the various embodiments cannot be used advantageously in combination. Without departing from the scope of this utility model, those skilled in the art can make various substitutions and modifications, all of which should fall within the scope of this utility model.

Claims

1. A large-current high-speed rising current source circuit characterized by comprising: The current source includes an AC-to-DC module (101), a filter module (102), an energy storage module (103), a high-speed drive module (104), a data acquisition module (105), and a communication module (106) connected in series. The energy storage module (103) is a supercapacitor bank, equipped with a voltage equalization circuit, and supports instantaneous high current discharge; The high-speed drive module (104) adopts a three-stage drive circuit, including a differential amplifier circuit, a push-pull amplifier circuit and a parallel MOSFET drive amplifier circuit.

2. A high-current high-speed rising current source circuit according to claim 1, characterized in that, The high-speed drive module (104) adopts a three-stage drive structure connected in series, including a first-stage drive, a second-stage drive and a third-stage drive; The first-stage driver is a differential amplifier circuit composed of at least one symmetrically arranged transistor pair, the first transistor VT1 and the second transistor VT2. The base is connected to the input signal through the first resistor R1 and the second resistor R2 respectively. The emitter is connected to the common resistors R3 and R4. The collector is connected to the power supply and the load resistor respectively, forming a differential amplifier circuit. The secondary drive includes at least one pair of transistors with the same parameters: a third transistor VT3 and a fourth transistor VT4, three resistors: a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, and a fifth capacitor C5, wherein the two transistors: the third transistor VT3, the fourth transistor VT4, and the ninth resistor R9 are connected in series, and the fifth capacitor C5 is connected in series with the eighth resistor R8 and the seventh resistor R7. The three-stage drive includes a transistor and an equal number of protective resistors, which are connected in parallel in the circuit to achieve step-by-step drive amplification.

3. The large current high rise current source circuit according to claim 1, wherein The energy storage module (103) uses a supercapacitor bank.

4. The high-current, high-speed rising current source circuit according to claim 1, characterized in that, The AC to DC module (101) converts AC power input into DC power output.

5. The large current high slew rate current source circuit of claim 1, wherein, The filtering module (102) includes a second-order Butterworth low-pass structure with a cutoff frequency of 1kHz, which can effectively suppress high-frequency noise.

6. The large current high slew rate current source circuit of claim 1, wherein, The acquisition module (105) includes current acquisition and voltage acquisition.

7. The large current high slew rate current source circuit of claim 1, wherein, The energy storage module (103) is equipped with thermal management.

8. The large current high slew rate current source circuit of claim 2, wherein, The high-speed drive module (104) has an RC filter circuit consisting of a sixth resistor R6, a third capacitor C3, and a fourth capacitor C4 connected in series between the first-stage drive output terminal and the second-stage drive input terminal, and a filter circuit consisting of a sixth capacitor C6 and a tenth resistor R10 connected in series between the second-stage drive output terminal and the third-stage drive input terminal.

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