Power module packaging structure

Abstract

The utility model discloses a power module packaging structure, and the structure comprises a lead frame which comprises a plurality of independent base islands. A driving chip and a plurality of power devices, the driving chip comprises a first side edge and a second side edge, and the driving chip and the plurality of power devices are located on the corresponding base islands of the lead frame; the plastic package body wraps the driving chip, the plurality of power devices, the plurality of base islands of the lead frame and the first ends of the plurality of pins, and the plastic package body comprises a first side edge and a second side edge; the first distance between the first side edge of the driving chip and the first side edge of the plastic package body is smaller than the second distance between the second side edge of the driving chip and the second side edge of the plastic package body. Part of the plurality of power devices are distributed between the second side edge of the driving chip and the second side edge of the plastic package body, and the plurality of power devices partially surround the driving chip.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor technology, and more specifically, to a packaging structure. Background Technology

[0002] An IPM (Intelligent Power Module) is a new type of high-power power electronic device with advantages such as high current density, low saturation voltage, and high voltage resistance. It is currently widely used in various fields such as air conditioners, washing machines, and fans. Power modules need to have high reliability, stability, and good heat dissipation capabilities to adapt to the needs of various working environments and workloads.

[0003] Traditional power modules have multiple power devices arranged in a single row, which not only affects the heat dissipation of some power devices, but also makes it difficult to reduce the module size due to this arrangement, which is not conducive to the current trend of miniaturization in various fields.

[0004] We look forward to further improving the power module packaging structure so that it not only has better heat dissipation capabilities but also has the advantage of low cost, thereby improving the stability and reliability of the product. Utility Model Content

[0005] In view of the above problems, the purpose of this utility model is to provide a new power module packaging structure that surrounds multiple power devices around the driver chip to achieve a uniform distribution of multiple power devices, thereby realizing the miniaturization of the power module and improving heat dissipation performance.

[0006] According to one aspect of the present invention, a power module packaging structure is provided, comprising: a lead frame including a plurality of mutually independent base islands; a driver chip and a plurality of power devices, the driver chip including a first side and a second side, the driver chip and the plurality of power devices being located on corresponding base islands of the lead frame; and a molding compound covering the driver chip, the plurality of power devices and the plurality of base islands of the lead frame, the molding compound including a first side and a second side; wherein a first distance between the first side of the driver chip and the first side of the molding compound is less than a second distance between the second side of the driver chip and the second side of the molding compound, and a portion of the plurality of power devices are distributed between the second side of the driver chip and the second side of the molding compound, the plurality of power devices partially surrounding the driver chip.

[0007] Optionally, the base island includes a first base island, a second base island, a third base island, a fourth base island, and a fifth base island; the plurality of power devices include a first power device, a second power device, and a third power device serving as upper-bridge power devices, and a fourth power device, a fifth power device, and a sixth power device serving as lower-bridge power devices; the driver chip is located on the first base island, the upper-bridge power device is located on the second base island, and the lower-bridge power devices are respectively located on the third base island, the fourth base island, and the fifth base island, with the second base island, the third base island, the fourth base island, and the fifth base island partially surrounding the first base island; two of the third base island, the fourth base island, and the fifth base island are adjacent and located on one side of the second base island, and one of the third base island, the fourth base island, and the fifth base island is located on the other side of the second base island.

[0008] Optionally, the base island includes a first base island, a second base island, a third base island, a fourth base island, and a fifth base island; the power devices include a first power device, a second power device, and a third power device serving as upper-bridge power devices, and a fourth power device, a fifth power device, and a sixth power device serving as lower-bridge power devices; the driver chip is located on the first base island, the upper-bridge power device is located on the second base island, and the lower-bridge power devices are respectively located on the third base island, the fourth base island, and the fifth base island; the second base island includes a first part and a second part, the first part of the second base island is located to the left of the first base island, the second part of the second base island is located above and to the upper right of the first base island, the third base island and the fourth base island are located to the upper left of the first base island, and the fifth base island is located to the right of the first base island.

[0009] Optionally, the first power device, the second power device, and the third power device are located on the second base island, the fourth power device is located on the third base island, the fifth power device is located on the fourth base island, and the sixth power device is located on the fifth base island. The first power device is located to the left of the driver chip, the second and third power devices are located to the upper right of the driver chip, the fourth and fifth power devices are located to the upper left of the driver chip, and the sixth power device is located to the right of the driver chip.

[0010] Optionally, the first terminal of the first power device, the first terminal of the second power device, the first terminal of the third power device, the first terminal of the fourth power device, the first terminal of the fifth power device, and the first terminal of the sixth power device respectively receive the first drive control signal, the second drive control signal, the third drive control signal, the fourth drive control signal, the fifth drive control signal, and the sixth drive control signal from the drive chip; the second terminals of the first power device, the second terminals of the second power device, and the second terminals of the third power device are electrically connected to the positive terminal of the DC power supply; the third terminals of the first power device and the second terminals of the fourth power device are electrically connected to the U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal, the third terminals of the second power device and the second terminals of the fifth power device are electrically connected to the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal, the third terminals of the third power device and the second terminals of the sixth power device are electrically connected to the W-phase output terminal / W-phase upper bridge drive bias voltage ground terminal; the third terminal of the fourth power device is electrically connected to the U-phase DC power supply negative terminal, the third terminal of the fifth power device is electrically connected to the V-phase DC power supply negative terminal, and the third terminal of the sixth power device is electrically connected to the W-phase DC power supply negative terminal.

[0011] Optionally, the positive terminal of the DC power supply, the ground terminal of the U-phase output / U-phase upper bridge drive bias voltage, the ground terminal of the V-phase output / V-phase upper bridge drive bias voltage, the ground terminal of the W-phase output / W-phase upper bridge drive bias voltage, the negative terminal of the U-phase DC power supply, the negative terminal of the V-phase DC power supply, and the negative terminal of the W-phase DC power supply are led out from the second side of the plastic package as corresponding pins of the package structure.

[0012] Optionally, the U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal, the U-phase DC power supply negative terminal, the V-phase DC power supply negative terminal, the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal, the DC power supply positive terminal, the W-phase output terminal / W-phase upper bridge drive bias voltage ground terminal, and the W-phase DC power supply negative terminal are arranged in sequence.

[0013] Optionally, the first base island leads to a common ground terminal, the first side of which has several low-voltage terminals, and the second side of which has several high-voltage terminals.

[0014] Optionally, the plurality of low-voltage terminals on the first side of the common ground terminal include a fault signal output terminal, a temperature signal output terminal, an overcurrent protection signal input terminal, a U-phase downbridge signal input terminal, a V-phase downbridge signal input terminal, a W-phase downbridge signal input terminal, a U-phase upbridge signal input terminal, a V-phase upbridge signal input terminal, and a W-phase upbridge signal input terminal; the plurality of high-voltage terminals on the second side of the common ground terminal include a U-phase upbridge floating power supply terminal, a V-phase upbridge floating power supply terminal, and a W-phase upbridge floating power supply terminal; the fault signal output terminal, temperature signal output terminal, overcurrent protection signal input terminal, U-phase downbridge signal input terminal, V-phase downbridge signal input terminal, W-phase downbridge signal input terminal, U-phase upbridge signal input terminal, V-phase upbridge signal input terminal, W-phase upbridge signal input terminal, low-voltage power supply terminal, common ground terminal, U-phase upbridge floating power supply terminal, V-phase upbridge floating power supply terminal, and W-phase upbridge floating power supply terminal are led out from the first side of the plastic package as corresponding pins of the package structure.

[0015] Optionally, the fault signal output terminal, temperature signal output terminal, overcurrent protection signal input terminal, U-phase lower bridge signal input terminal, V-phase lower bridge signal input terminal, W-phase lower bridge signal input terminal, U-phase upper bridge signal input terminal, V-phase upper bridge signal input terminal, W-phase upper bridge signal input terminal, low-voltage power supply terminal, common ground terminal, U-phase upper bridge floating power supply terminal, V-phase upper bridge floating power supply terminal, and W-phase upper bridge floating power supply terminal are arranged in sequence.

[0016] Optionally, the fault signal output terminal and the temperature signal output terminal may be multiplexed to the same terminal, or the fault signal output terminal and the temperature signal output terminal may be separated into two independent terminals.

[0017] Optionally, the power device is a MOS transistor, with the gate of the MOS transistor serving as the first terminal of the power device, the drain of the MOS transistor serving as the second terminal of the power device and located on the base island corresponding to each of the power devices, and the source of the MOS transistor serving as the third terminal of the power device.

[0018] Optionally, the power device is an RC-IGBT, with the gate of the RC-IGBT serving as the first terminal of the power device, the collector of the RC-IGBT serving as the second terminal of the power device and located on the base island corresponding to each of the power devices, and the emitter of the RC-IGBT serving as the third terminal of the power device.

[0019] Optionally, the power device is an IGBT and a fast recovery diode. The gate of the IGBT serves as the first terminal of the power device. The emitter of the IGBT is electrically connected to the anode of the fast recovery diode and serves as the third terminal of the power device. The collector of the IGBT is electrically connected to the cathode of the fast recovery diode and serves as the second terminal of the power device. The collector of the IGBT and the cathode of the fast recovery diode are located on the base islands corresponding to each of the power devices.

[0020] Optionally, one end of the second base island leads to the positive terminal of the DC power supply, one end of the third base island leads to the U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal, one end of the fourth base island leads to the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal, and one end of the fifth base island leads to the W-phase output terminal / W-phase upper bridge drive bias voltage ground terminal.

[0021] Optionally, the encapsulation body further includes a parallel third side and a fourth side, the third side and the fourth side being perpendicular to the first side, the other end of the second base island being connected to the third side of the encapsulation body, and the other end of the fifth base island being connected to the fourth side of the encapsulation body.

[0022] Optionally, the positive terminal of the DC power supply, the ground terminal of the U-phase output / U-phase upper bridge drive bias voltage, the ground terminal of the V-phase output / V-phase upper bridge drive bias voltage, the ground terminal of the W-phase output / W-phase upper bridge drive bias voltage, the negative terminal of the U-phase DC power supply, the negative terminal of the V-phase DC power supply, and the negative terminal of the W-phase DC power supply are connected to the driver chip via bonding wires.

[0023] Optionally, the positive terminal of the DC power supply, the ground terminal of the U-phase output / U-phase upper bridge drive bias voltage, the ground terminal of the V-phase output / V-phase upper bridge drive bias voltage, and the ground terminal of the W-phase output / W-phase upper bridge drive bias voltage are connected to the driver chip via bonding wires.

[0024] Optionally, within the driver chip, a first bootstrap diode is connected between the low-voltage power supply terminal and the floating power supply terminal of the U-phase upper bridge drive, a second bootstrap diode is connected between the low-voltage power supply terminal and the floating power supply terminal of the V-phase upper bridge drive, and a third bootstrap diode is connected between the low-voltage power supply terminal and the floating power supply terminal of the W-phase upper bridge drive. The first bootstrap diode, the second bootstrap diode, and the third bootstrap diode are integrated in the driver chip.

[0025] Optionally, the power module packaging structure can be surface mount or through-hole package.

[0026] Optionally, the power module packaging structure is a plug-in package, and the pins leading out from the first side of the plastic package are in a single row or a double row, and the pins leading out from the second side of the plastic package are in a single row or a double row.

[0027] Optionally, the dimensions of the encapsulated body are 15mm to 35mm in length and 7mm to 20mm in width.

[0028] Optionally, the molding compound has a height of 1.5mm to 5mm.

[0029] Optionally, the dimensions of the encapsulated body are 20mm-25mm in length and 10-15mm in width.

[0030] Optionally, the molding compound has a height of 2-4 mm.

[0031] Optionally, the center distance between adjacent low-voltage terminals on the first side of the common ground terminal is 0.9mm-2.0mm, with an error range of ±0.15mm, and the center distance between adjacent high-voltage terminals on the second side of the common ground terminal is 3.0-5.0mm, with an error range of ±0.15mm.

[0032] Optionally, the center distance between the common ground terminal and the U-phase upper bridge floating power supply terminal is 3.0-5.0mm, with an error range of ±0.15mm.

[0033] Optionally, the center distance between the negative terminal of the U-phase DC power supply and the negative terminal of the V-phase DC power supply is 1.0mm-5.0mm, with an error range of ±0.15mm; the center distance between the U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal and the negative terminal of the U-phase DC power supply is 3.0mm-5.0mm, with an error range of ±0.15mm; the center distance between the negative terminal of the V-phase DC power supply and the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal is 3.0mm-5.0mm, with an error range of ±0.15mm; the center distance between adjacent terminals of the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal, the positive terminal of the DC power supply, the W-phase output terminal / W-phase upper bridge drive bias voltage ground terminal, and the negative terminal of the W-phase DC power supply is 3.0mm-5.0mm, with an error range of ±0.15mm.

[0034] Optionally, the center distance between the negative terminal of the U-phase DC power supply and the negative terminal of the V-phase DC power supply is 1.5mm-3.0mm, with an error range of ±0.15mm; the center distance between the U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal and the negative terminal of the U-phase DC power supply is 3.0mm-4.5mm, with an error range of ±0.15mm; the center distance between the negative terminal of the V-phase DC power supply and the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal is 3.0mm-4.5mm, with an error range of ±0.15mm; the center distance between adjacent terminals of the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal, the positive terminal of the DC power supply, the W-phase output terminal / W-phase upper bridge drive bias voltage ground terminal, and the negative terminal of the W-phase DC power supply is 3.0mm-4.5mm, with an error range of ±0.15mm.

[0035] Optionally, the first base island is not on the same horizontal plane as the second, third, fourth, and fifth base islands.

[0036] According to the power module packaging structure of this utility model embodiment, the driver chip is positioned adjacent to one side of the plastic package, and multiple power devices partially surround the driver chip to achieve a uniform distribution of the multiple power devices. Because the space utilization is improved within the packaging structure, the power module can be miniaturized. Furthermore, the improved heat distribution uniformity of the multiple power devices within the packaging structure effectively improves heat dissipation performance and extends the service life of the power module.

[0037] In a preferred embodiment, a first group of power devices shares a base island connected to the positive terminal of the DC power supply, while a second group of power devices resides on its respective base island connected to its output terminal. The shared base island of the first group of power devices partially surrounds the base island of the driver chip. This shared base island approach not only achieves internal interconnection and reduces the number of internal bonding wires, but also increases the area of ​​the base island, thereby increasing the heat dissipation area of ​​the power module, further improving heat dissipation performance, and extending the service life of the power module.

[0038] In a preferred embodiment, the power module package structure further includes a plurality of fast recovery diodes located on corresponding base islands of the plurality of power devices. The plurality of power devices are connected to the plurality of fast recovery diodes via a plurality of first bonding wires, and the plurality of fast recovery diodes are connected to corresponding pins via a plurality of second bonding wires. This design not only effectively improves the operating efficiency of the power module but also further enhances its protection function, ensuring that the fast recovery diodes can respond quickly during high-frequency switching operations, protecting the power devices from damage by reverse voltage.

[0039] In a preferred embodiment, a bootstrap diode is provided between the low-voltage power supply terminal and the floating power supply terminal for the upper bridge drive inside the driver chip. This bootstrap diode design ensures that the driver chip receives a stable power supply during upper bridge drive, avoiding drive instability caused by voltage fluctuations, thereby further improving the overall performance and reliability of the power module. Through the optimized design of the above structure, the power module packaging structure of this invention not only meets the current market demand for miniaturization and efficient heat dissipation, but also demonstrates significant advantages in cost control and product stability. Attached Figure Description

[0040] The above and other objects, features and advantages of the present invention will become clearer from the following description of embodiments of the present invention with reference to the accompanying drawings, in which:

[0041] Figure 1 The circuit diagrams showing the packaging structures of the first and second embodiments of this utility model are shown.

[0042] Figure 2 This invention provides perspective views of the packaging structure of all embodiments of the present invention.

[0043] Figure 3 This diagram shows the internal structure of the packaging structure according to the second embodiment of the present invention.

[0044] Figure 4 This diagram shows another packaging structure of the first embodiment of the present invention;

[0045] Figure 5 A circuit diagram showing the packaging structure of the third embodiment of this utility model is provided.

[0046] Figure 6 This diagram shows the internal structure of the packaging structure according to the third embodiment of the present invention.

[0047] Figure 7 A circuit diagram showing the packaging structure of the fourth embodiment of this utility model is shown;

[0048] Figure 8 This diagram shows the internal structure of the packaging structure according to the fourth embodiment of the present invention.

[0049] Figure 9 This diagram shows the internal structure of the second embodiment of the present invention as viewed from the fourth side. Detailed Implementation

[0050] The present invention will now be described in more detail with reference to the accompanying drawings. For clarity, the various parts in the drawings are not drawn to scale. Furthermore, certain well-known parts may not be shown. Many specific details of the present invention are described below, but as those skilled in the art will understand, the present invention may be implemented without following these specific details.

[0051] This invention can be presented in various forms, some of which will be described below.

[0052] Figure 1 The circuit diagrams of the first and second embodiments of this utility model are shown.

[0053] The power module 100 includes a driver chip U1, and first to third IGBTs Q11, Q21, and Q31, and fourth to sixth IGBTs Q12, Q22, and Q32 connected to the driver chip U1. In this document, the package structure is described in detail using IGBTs as an example.

[0054] IGBT is an abbreviation for Insulated Gate Bipolar Transistor. An IGBT is a three-terminal switching device, including a gate, emitter, and collector, characterized by high efficiency, fast switching, and low conduction losses, primarily used for power conversion and control. However, this invention is not limited to this. Multiple power devices within the power module 100 are either MOS transistors, RC-IGBTs (reverse-conducting insulated gate bipolar transistors), or combinations of conventional IGBTs and fast recovery diodes. The fast recovery diode (FRD) is integrated within the RC-IGBT.

[0055] The input terminals INUH, INUL, INVH, INVL, INWH, and INWL of the driver chip U1 receive control signals for the U-phase, V-phase, and W-phase from external circuits. The output terminals OUTUH, OUTUL, OUTVH, OUTVL, OUTWH, and OUTWL are connected to the gates of the corresponding IGBTs to provide drive signals for the U-phase, V-phase, and W-phase. The output terminals OUTUH and OUTUL of the driver chip U1 are connected to the gates of the first IGBT Q11 and the fourth IGBT Q12, respectively, to provide the upper and lower bridge drive signals for the U-phase. Similarly, the output terminals OUTVH and OUTVL of the driver chip U1 are connected to the gates of the second IGBT Q21 and the fifth IGBT Q22, respectively, to provide the upper and lower bridge drive signals for the V-phase. The output terminals OUTWH and OUTWL of the driver chip U1 are connected to the gates of the third IGBT Q31 and the sixth IGBT Q32 to provide the upper and lower bridge drive signals for the W-phase. In addition, the driver chip U1 is also connected to the negative terminals NU, NV, and NW of the multiphase DC power supply.

[0056] Therefore, the three-phase drive signals generated by the driver chip U1 are used to control the conduction state of the first to third IGBTs Q11, Q21 and Q31, and the fourth to sixth IGBTs Q12, Q22 and Q32.

[0057] Furthermore, the driver chip U1 can also include multiple bootstrap diodes internally. A bootstrap diode is connected between the low-voltage power supply terminal VCC of the driver chip U1 and each of the upper bridge floating power supply terminals VBU, VBV, and VBW. The function of the bootstrap diode is to provide a stable floating power supply voltage to the driver chip U1 when the upper bridge IGBT is turned on, ensuring reliable driving of the upper bridge IGBT.

[0058] Under the control of the driver chip U1, the power module 100 generates three-phase output signals, namely, U-phase output signal U,VSU, V-phase output signal V,VSV, and W-phase output signal W,VSW. The phases of the three-phase output signals U,VSU, V,VSV, and W,VSW change periodically with time and have phase differences with each other to meet the needs of various motor drive and power conversion applications.

[0059] Figure 2 A perspective view showing the packaging structure of all embodiments of this utility model is provided. Figure 9 This diagram shows the internal structure of the second embodiment of the present invention as viewed from the fourth side. The internal structure diagrams of the various embodiments of the present invention are generally the same as those viewed from the fourth side; therefore, the perspective view of the packaging structure and the internal structure diagram viewed from the fourth side will not be described in detail below.

[0060] Figure 3 , Figure 4 The internal structure diagrams of the packaging structure of the first embodiment and the second embodiment of the utility model are shown respectively.

[0061] by Figure 2 and Figure 4 The package structure 200 shown includes a lead frame 201, a molding compound 202, a driver chip U1, and first to third IGBTs Q11, Q21, and Q31, and fourth to sixth IGBTs Q12, Q22, and Q32 connected to the driver chip U1. Figure 2 and Figure 3 The package structure 200 shown includes first to third IGBTs Q11, Q21, and Q31, and fourth to sixth IGBTs Q12, Q22, and Q32, all of which are RC-IGBTs (reverse-conducting insulated-gate bipolar transistors). Each RC-IGBT integrates a fast recovery diode (FRD). The collector of the RC-IGBT serves as the second terminal of the power device and is located on the corresponding base island of each power device. The emitter of the RC-IGBT serves as the third terminal of the power device.

[0062] The driver chip U1 includes a first side and a second side, and the driver chip and multiple power devices are located on corresponding base islands of the lead frame. A molding compound encapsulates the driver chip U1, the multiple power devices, and the multiple base islands of the lead frame.

[0063] The first distance between the first side of the driver chip U1 and the first side of the molding compound is less than the second distance between the second side of the driver chip U1 and the second side of the molding compound, and a plurality of power devices are distributed between the second side of the driver chip U1 and the second side of the molding compound, with the plurality of power devices partially surrounding the driver chip U1.

[0064] The following is Figure 2 and Figure 4 The package structure shown is illustrated, with the lead frame 201 including multiple base islands 11-18 and multiple pins 21-40.

[0065] The driver chip U1 is disposed on the first base island 11. The first to third IGBTs Q11, Q21 and Q31 are disposed on the second base island 12, the fourth IGBT Q12 is disposed on the third base island 13, the fifth IGBT Q22 is disposed on the fourth base island 14, and the sixth IGBT Q32 is disposed on the fifth base island 15. The second base island 12, the third base island 13, the fourth base island 14 and the fifth base island 15 partially surround the first base island 11; two of the third base island 13, the fourth base island 14 and the fifth base island 15 are adjacent and located on one side of the second base island 12, and one of the third base island 13, the fourth base island 14 and the fifth base island 15 is located on the other side of the second base island 12. Specifically, the second base island 12 includes a first part and a second part. The first part of the second base island 12 is located to the left of the first base island 11, and the second part of the second base island 12 is located above and to the upper right of the first base island 11. The third base island 13 and the fourth base island 14 are located to the upper left of the first base island 11, and the fifth base island 15 is located to the right of the first base island 11.

[0066] The first IGBT Q11 is located to the left of the driver chip U1, the second IGBT Q21 and the third IGBT Q31 are located to the upper right of the driver chip U1, the fourth IGBT Q12 and the fifth IGBT Q22 are located to the upper left of the driver chip U1, and the sixth IGBT Q32 is located to the right of the driver chip U1.

[0067] The first base island 11 has a common ground terminal, and the common ground terminal has a plastic package as pin 31. The second base island 12 has a DC power supply positive terminal (P), and the DC power supply positive terminal (P) has a plastic package as pin 25. The third base island 13 to the fifth base island 15 have U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal, V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal, and W-phase output terminal / W-phase upper bridge drive bias voltage ground terminal, respectively. The U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal, V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal, and W-phase output terminal / W-phase upper bridge drive bias voltage ground terminal have plastic packages as pins 21, 24, and 26, respectively.

[0068] The first terminals of the first IGBT Q11, the second IGBT Q21, the third IGBT Q31, the fourth IGBT Q12, the fifth IGBT Q22, and the sixth IGBT Q32 respectively receive the first, second, third, fourth, fifth, and sixth drive control signals from the driver chip U1. The second terminals of the first IGBT Q11, the second IGBT Q21, and the third IGBT Q31 are electrically connected to the positive DC power supply terminal P. The third terminals of the first IGBT Q11 and the fourth IGBT Q12 are electrically connected to the U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal U,VSU; the third terminals of the second IGBT Q21 and the fifth IGBT Q22 are electrically connected to the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal V,VSV; the third terminals of the third IGBT Q31 and the sixth IGBT Q32 are electrically connected to the W-phase output terminal / W-phase upper bridge drive bias voltage ground terminal W,VSW. The fourth IGBT... The third terminal of Q12 is electrically connected to the negative terminal of the U-phase DC power supply NU; the third terminal of the fifth IGBT Q22 is electrically connected to the negative terminal of the V-phase DC power supply NV; and the third terminal of the sixth IGBT Q32 is electrically connected to the negative terminal of the W-phase DC power supply NW.

[0069] IGBTs and fast recovery diodes form a power device. The gate of the IGBT serves as the first terminal of the power device. The emitter of the IGBT is electrically connected to the anode of the fast recovery diode and serves as the third terminal of the power device. The collector of the IGBT is electrically connected to the cathode of the fast recovery diode and serves as the second terminal of the power device. The collector of the IGBT and the cathode of the fast recovery diode are located on the base islands corresponding to each of the power devices.

[0070] The positive terminal P of the DC power supply, the output terminal / ground terminal U of the U phase upper bridge drive bias voltage U,VSU, the output terminal / ground terminal V of the V phase upper bridge drive bias voltage V,VSV, the output terminal / ground terminal W of the W phase upper bridge drive bias voltage W,VSW, the negative terminal NU of the U phase DC power supply, the negative terminal NV of the V phase DC power supply, and the negative terminal NW of the W phase DC power supply are led out from the second side of the plastic package 202.

[0071] The following terminals are arranged in sequence: U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal U,VSU, U-phase DC power supply negative terminal NU, V-phase DC power supply negative terminal NV, V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal V,VSV, DC power supply positive terminal P, W-phase output terminal / W-phase upper bridge drive bias voltage ground W,VSW, and W-phase DC power supply negative terminal NW. U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal U,VSU is led out from the plastic package as pin 21; U-phase DC power supply negative terminal NU is led out from the plastic package as pin 22; V-phase DC power supply negative terminal NV is led out from the plastic package as pin 23; V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal V,VSV is led out from the plastic package as pin 24; DC power supply positive terminal P is led out from the plastic package as pin 25; W-phase output terminal / W-phase upper bridge drive bias voltage ground W,VSW is led out from the plastic package as pin 26; W-phase DC power supply negative terminal NW is led out from the plastic package as pin 27.

[0072] The first side of the common ground terminal COM consists of several low-voltage terminals, namely: low-voltage power supply terminal VCC, W-phase upper bridge signal input terminal INWH, V-phase upper bridge signal input terminal INVH, U-phase upper bridge signal input terminal INUH, W-phase lower bridge signal input terminal INWL, V-phase lower bridge signal input terminal INVL, U-phase lower bridge signal input terminal INUL, overcurrent protection signal input terminal CSC, and fault signal output terminal / temperature signal output terminal VFO / VOT. The fault signal output terminal / temperature signal output terminal VFO / VOT is a current-output type multiplexed terminal used to generate a superimposed current signal of the fault signal and temperature signal. In this embodiment, by designing the fault signal output terminal / temperature signal output terminal VFO / VOT as a current-output type multiplexed terminal, the dual functions of fault detection and temperature monitoring can be achieved, reducing the number of terminals, simplifying circuit design, and improving the system's integration and reliability.

[0073] The high-voltage terminals on the second side of the common ground terminal COM include the U-phase upper bridge floating power supply terminal VBU, the V-phase upper bridge floating power supply terminal VBV, and the W-phase upper bridge floating power supply terminal VBW.

[0074] The fault signal output terminal VFO, temperature signal output terminal VOT, overcurrent protection signal input terminal CSC, U-phase lower bridge signal input terminal INUL, V-phase lower bridge signal input terminal INVL, W-phase lower bridge signal input terminal INWL, U-phase upper bridge signal input terminal INUH, V-phase upper bridge signal input terminal INVH, W-phase upper bridge signal input terminal INWH, low-voltage power supply terminal VCC, common ground terminal COM, U-phase upper bridge floating power supply terminal VBU, V-phase upper bridge floating power supply terminal VBV, and W-phase upper bridge floating power supply terminal VBW are arranged in sequence. The fault signal output terminal VFO is led out from the plastic package as pin 40; the temperature signal output terminal VOT is led out from the plastic package as pin 40; the overcurrent protection signal input terminal CSC is led out from the plastic package as pin 39; the U-phase lower bridge signal input terminal INUL is led out from the plastic package as pin 38; the V-phase lower bridge signal input terminal INVL is led out from the plastic package as pin 37; the W-phase lower bridge signal input terminal INWL is led out from the plastic package as pin 36; and the U-phase upper bridge signal input terminal INUH is led out from the plastic package as pin 49. Pin 35, V-phase upper bridge signal input terminal INVH is led out from the plastic package as a pin. 34, W-phase upper bridge signal input terminal INWH is led out from the plastic package as a pin. 33, low-voltage power supply terminal VCC is led out from the plastic package as a pin. 32, common ground terminal COM is led out from the plastic package as a pin. 31, U-phase upper bridge floating power supply terminal VBU is led out from the plastic package as a pin. 30, V-phase upper bridge floating power supply terminal VBV is led out from the plastic package as a pin. 29, W-phase upper bridge floating power supply terminal VBW is led out from the plastic package as a pin. 28.

[0075] In addition, the power module package structure 200 also includes sixth to eighth base islands 16-18. The sixth base island 16 is connected to the NW phase, which serves as the negative terminal for W-phase DC power supply. The seventh base island 17 is connected to the VFO / VOT phase, which serves as the fault signal output terminal / temperature signal output terminal. The eighth base island 18 is connected to the CSC phase, which serves as the overcurrent protection signal input terminal.

[0076] The gates of the first to third IGBTs Q11, Q21, and Q31, and the fourth to sixth IGBTs Q12, Q22, and Q32 are connected to the driver chip U1 via their respective bonding lines, and their emitters are also connected to the driver chip U1 via their respective bonding lines. In this embodiment, the first to third IGBTs Q11, Q21, and Q31, and the fourth to sixth IGBTs Q12, Q22, and Q32 are all vertical devices, including emitters and collectors located on opposite surfaces.

[0077] The molding compound 202 also includes a parallel third side and a fourth side, which are perpendicular to the first side. The other end of the second base island 12 is connected to the third side of the molding compound 202, and the other end of the fifth base island 15 is connected to the fourth side of the molding compound 202.

[0078] In this embodiment, the package type of the package structure 200 can be surface mount package or through-hole package. In the through-hole package embodiment, the pins leading out from the first side of the molded body 202 can be a single row or a double row, and the pins leading out from the second side of the molded body 202 can also be a single row or a double row. This design not only improves the flexibility of the package structure, but also facilitates circuit connection and fault detection for users in practical applications.

[0079] The dimensions of the encapsulating body 202 can be 15mm~35mm in length, 7~20mm in width, and 1.5mm~5mm in height. More preferably, the dimensions of the encapsulating body 202 can be 20mm~25mm in length, 10~15mm in width, and 2~4mm in height.

[0080] The center distance between adjacent low-voltage terminals on the first side of the common ground terminal COM is 0.9mm~2.0mm, with an error range of ±0.15mm. The center distance between adjacent high-voltage terminals on the first side of the common ground terminal COM is 3.0mm~5.0mm, with an error range of ±0.15mm. The center distance between the common ground terminal COM and the U-phase upper bridge floating power supply terminal VBU is 3.0-5.0mm, with an error range of ±0.15mm.

[0081] In this embodiment, the center distance between the U-phase DC negative terminal NU and the V-phase DC negative terminal NV is 1.0mm~5.0mm, with an error range of ±0.15mm. The center distance between the U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal U,VSU and the U-phase DC negative terminal NU is 3.0mm~5.0mm, with an error range of ±0.15mm. The center distance between the V-phase DC negative terminal NV and the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal V,VSV is 3.0mm~5.0mm, with an error range of ±0.15mm. The center distance between adjacent terminals of the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal V,VSV, DC power supply positive terminal P, W-phase output terminal / W-phase upper bridge drive bias voltage ground terminal W,VSW, and W-phase DC negative terminal NW is 3.0mm~5.0mm, with an error range of ±0.15mm.

[0082] In a more specific embodiment, the center distance between the U-phase DC negative terminal NU and the V-phase DC negative terminal NV is 1.5mm~3.0mm, with an error range of ±0.15mm. The center distance between the U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal U,VSU and the U-phase DC negative terminal NU is 3.0mm~4.5mm, with an error range of ±0.15mm. The center distance between the V-phase DC negative terminal NV and the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal V,VSV is 3.0mm~4.5mm, with an error range of ±0.15mm. The center distance between adjacent terminals of the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal V,VSV, DC power supply positive terminal P, W-phase output terminal / W-phase upper bridge drive bias voltage ground terminal W,VSW, and W-phase DC negative terminal NW is 3.0mm~4.5mm, with an error range of ±0.15mm.

[0083] Furthermore, the first base island is not on the same horizontal plane as the second, third, fourth, and fifth base islands.

[0084] In this embodiment, the driver chip U1 is positioned adjacent to one side of the molding compound 202, and multiple IGBT portions surround the driver chip U1 to achieve a uniform distribution of multiple power devices.

[0085] By improving space utilization within the packaging structure, power modules can be miniaturized. Furthermore, the improved heat distribution uniformity among multiple power devices within the packaging structure effectively enhances heat dissipation performance and extends the lifespan of the power module.

[0086] Furthermore, the second base island 12 partially surrounds the first base island 11 of the driver chip U1, improving the efficiency of internal interconnection and also improving heat dissipation performance by increasing the area of ​​the base island.

[0087] Furthermore, by rationally distributing the high-voltage and low-voltage pins on opposite sides of the molded package 202, not only is it helpful to optimize the circuit layout and reduce interference between pins, but it also improves the compactness and reliability of the package structure. In particular, by concentrating high-current terminals such as the DC power supply positive terminal P, multi-phase output terminals U, VSU, V, VSV, W, VSW, etc., on the second side of the molded package 202, while concentrating low-current terminals such as the fault signal output terminal / temperature signal output terminal VFO / VOT, and the overcurrent protection signal input terminal CSC, etc., on the first side, this layout effectively avoids interference from the high-voltage terminals to the low-voltage signals, improves the stability of signal transmission, and also facilitates circuit connection and fault detection for users in practical applications.

[0088] Figure 3 This diagram illustrates another packaging structure according to the second embodiment of the present invention.

[0089] exist Figure 3 In the package structure 200 shown, the first to third power devices Q11, Q21, and Q31, and the fourth to sixth power devices Q12, Q22, and Q32 are all RC-IGBTs (reverse-conducting insulated-gate bipolar transistors). The remaining aspects of package structure 200 are the same as package structure 300 and will not be described in detail here. Only the differences between the two will be described in detail below.

[0090] exist Figure 3 In the package structure 200 shown, the first to third power devices Q11, Q21, and Q31, and the fourth to sixth power devices Q12, Q22, and Q32 are all MOS transistors. The gate of the MOS transistor serves as the first terminal of the power device, the drain of the MOS transistor serves as the second terminal of the power device and is located on the corresponding base island of each power device, and the source of the MOS transistor serves as the third terminal of the power device. The remaining aspects of package structure 200 are the same as those of package structure 300, and will not be described in detail here. Only the differences between the two will be described in detail below.

[0091] Figure 5 A circuit diagram showing the packaging structure of the third embodiment of this utility model is provided.

[0092] Figure 5 and Figure 1 The power module circuit 100 is similar, except that the fault signal output terminal VFO and the temperature signal output terminal VOT are separated into two independent terminals. Figure 6 This diagram shows the internal structure of the packaging structure according to the third embodiment of the present invention. Figure 6 Corresponding circuit Figure 5 , Figure 6 and Figure 3 The only difference is that the fault signal output terminal VFO and the temperature signal output terminal VOT are separated into two independent terminals.

[0093] Figure 7 A circuit diagram showing the packaging structure of the fourth embodiment of this utility model is shown; Figure 7 and Figure 1 The power module circuit is similar to 100, the only difference being... Figure 7 The driver chip U1 is no longer connected to the negative terminals NU, NV, and NW of the multiphase DC power supply.

[0094] Figure 8 The circuit corresponding to the package structure shown Figure 7 .

[0095] according to Figure 7 The power module 600 of the fourth embodiment and Figure 1The power module 100 shown according to the first embodiment differs in that the driver chip U1 is not connected to the negative terminals NU, NV, and NW of the multiphase DC power supply. The remaining aspects of the power module 600 are the same as those of the power module 100 and will not be described in detail here.

[0096] according to Figure 8 The packaging structure 700 of the fourth embodiment and Figure 3 The difference between the package module 200 shown according to the first embodiment is that the driver chip U1 is not connected to the negative terminals NU, NV, and NW of the multiphase DC power supply. Therefore, the bonding wires used to connect the driver chip U1 to the negative terminals NU, NV, and NW of the multiphase DC power supply can be omitted, thereby reducing the number of bonding wires inside the package structure. The remaining aspects of the package structure 500 are the same as those of the power module 100 and will not be described in detail here.

[0097] Figure 8 The power device shown is a MOS transistor. The gate of the MOS transistor serves as the first terminal of the power device, the drain of the MOS transistor serves as the second terminal of the power device and is located on the base island corresponding to each of the power devices, and the source of the MOS transistor serves as the third terminal of the power device.

[0098] Figure 8 The power device shown is an RC-IGBT. The gate of the RC-IGBT serves as the first terminal of the power device, the collector of the RC-IGBT serves as the second terminal of the power device and is located on the base island corresponding to each power device, and the emitter of the RC-IGBT serves as the third terminal of the power device.

[0099] Figure 8 The power devices shown are IGBTs and fast recovery diodes. The emitter of the IGBT is electrically connected to the anode of the fast recovery diode and serves as the third terminal of the power device. The collector of the IGBT is electrically connected to the cathode of the fast recovery diode and serves as the second terminal of the power device. The collector of the IGBT and the cathode of the fast recovery diode are located on the base islands corresponding to each power device.

[0100] The side view of the lead frame, driver chip, and power device from the fourth side of the molding compound is shown in Figure 9.

[0101] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0102] As described above, these embodiments of the present invention do not exhaustively cover all details, nor do they limit the invention to the specific embodiments described. Clearly, many modifications and variations can be made based on the above description. This specification selects and specifically describes these embodiments to better explain the principles and practical applications of the present invention, thereby enabling those skilled in the art to effectively utilize the present invention and its modifications. The present invention is limited only by the claims and their full scope and equivalents.

Claims

1. A power module packaging structure, characterized in that, include: A lead frame, the lead frame comprising a plurality of mutually independent base islands; A driver chip and multiple power devices are provided, the driver chip including a first side and a second side, the driver chip and multiple power devices being located on corresponding base islands of the lead frame; as well as A molding compound encapsulates the driver chip, the plurality of power devices, and the plurality of base islands of the lead frame. The molding compound includes a first side and a second side. Wherein, the first distance between the first side of the driver chip and the first side of the molding compound is less than the second distance between the second side of the driver chip and the second side of the molding compound, and some of the plurality of power devices are distributed between the second side of the driver chip and the second side of the molding compound, and the plurality of power devices partially surround the driver chip.

2. The power module packaging structure according to claim 1, characterized in that, The base island includes a first base island, a second base island, a third base island, a fourth base island, and a fifth base island; the plurality of power devices include a first power device, a second power device, and a third power device serving as upper-bridge power devices, and a fourth power device, a fifth power device, and a sixth power device serving as lower-bridge power devices; the driver chip is located on the first base island, the upper-bridge power device is located on the second base island, and the lower-bridge power devices are respectively located on the third base island, the fourth base island, and the fifth base island, with the second base island, the third base island, the fourth base island, and the fifth base island partially surrounding the first base island; two of the third base island, the fourth base island, and the fifth base island are adjacent and located on one side of the second base island, and one of the third base island, the fourth base island, and the fifth base island is located on the other side of the second base island.

3. The power module packaging structure according to claim 1, characterized in that, The base island includes a first base island, a second base island, a third base island, a fourth base island, and a fifth base island; the power devices include a first power device, a second power device, and a third power device serving as upper-bridge power devices, and a fourth power device, a fifth power device, and a sixth power device serving as lower-bridge power devices; the driver chip is located on the first base island, the upper-bridge power device is located on the second base island, and the lower-bridge power devices are located on the third base island, the fourth base island, and the fifth base island, respectively; the second base island includes a first part and a second part, the first part of the second base island is located to the left of the first base island, the second part of the second base island is located above and to the upper right of the first base island, the third base island and the fourth base island are located to the upper left of the first base island, and the fifth base island is located to the right of the first base island.

4. The power module packaging structure according to claim 3, characterized in that, The first power device, the second power device, and the third power device are located on the second base island, the fourth power device is located on the third base island, the fifth power device is located on the fourth base island, and the sixth power device is located on the fifth base island. The first power device is located to the left of the driver chip, the second and third power devices are located to the upper right of the driver chip, the fourth and fifth power devices are located to the upper left of the driver chip, and the sixth power device is located to the right of the driver chip.

5. The power module packaging structure according to claim 4, characterized in that, The first terminal of the first power device, the first terminal of the second power device, the first terminal of the third power device, the first terminal of the fourth power device, the first terminal of the fifth power device, and the first terminal of the sixth power device respectively receive the first drive control signal, the second drive control signal, the third drive control signal, the fourth drive control signal, the fifth drive control signal, and the sixth drive control signal from the drive chip; the second terminals of the first power device, the second terminals of the second power device, and the second terminals of the third power device are electrically connected to the positive terminal of the DC power supply; the third terminals of the first power device and the second terminals of the fourth power device are electrically connected to the U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal, the third terminals of the second power device and the second terminals of the fifth power device are electrically connected to the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal, the third terminals of the third power device and the second terminals of the sixth power device are electrically connected to the W-phase output terminal / W-phase upper bridge drive bias voltage ground terminal; the third terminal of the fourth power device is electrically connected to the U-phase DC power supply negative terminal, the third terminal of the fifth power device is electrically connected to the V-phase DC power supply negative terminal, and the third terminal of the sixth power device is electrically connected to the W-phase DC power supply negative terminal.

6. The power module packaging structure according to claim 5, characterized in that, The positive terminal of the DC power supply, the U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal, the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal, the W-phase output terminal / W-phase upper bridge drive bias voltage ground terminal, the negative terminal of the U-phase DC power supply, the negative terminal of the V-phase DC power supply, and the negative terminal of the W-phase DC power supply are led out from the second side of the plastic package as corresponding pins of the package structure.

7. The power module packaging structure according to claim 5, characterized in that, The U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal, the U-phase DC power supply negative terminal, the V-phase DC power supply negative terminal, the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal, the DC power supply positive terminal, the W-phase output terminal / W-phase upper bridge drive bias voltage ground terminal, and the W-phase DC power supply negative terminal are arranged in sequence.

8. The power module packaging structure according to claim 5, characterized in that, The first base island leads to a common ground terminal, the first side of which has several low-voltage terminals and the second side of which has several high-voltage terminals.

9. The power module packaging structure according to claim 8, characterized in that, The plurality of low-voltage terminals on the first side of the common ground terminal include a fault signal output terminal, a temperature signal output terminal, an overcurrent protection signal input terminal, a U-phase down-bridge signal input terminal, a V-phase down-bridge signal input terminal, a W-phase down-bridge signal input terminal, a U-phase up-bridge signal input terminal, a V-phase up-bridge signal input terminal, and a W-phase up-bridge signal input terminal; the plurality of high-voltage terminals on the second side of the common ground terminal include a U-phase up-bridge floating power supply terminal, a V-phase up-bridge floating power supply terminal, and a W-phase up-bridge floating power supply terminal; The fault signal output terminal, temperature signal output terminal, overcurrent protection signal input terminal, U-phase lower bridge signal input terminal, V-phase lower bridge signal input terminal, W-phase lower bridge signal input terminal, U-phase upper bridge signal input terminal, V-phase upper bridge signal input terminal, W-phase upper bridge signal input terminal, low-voltage power supply terminal, common ground terminal, U-phase upper bridge floating power supply terminal, V-phase upper bridge floating power supply terminal, and W-phase upper bridge floating power supply terminal are led out from the first side of the plastic package as corresponding pins of the package structure.

10. The power module packaging structure according to claim 9, characterized in that, The fault signal output terminal, temperature signal output terminal, overcurrent protection signal input terminal, U-phase lower bridge signal input terminal, V-phase lower bridge signal input terminal, W-phase lower bridge signal input terminal, U-phase upper bridge signal input terminal, V-phase upper bridge signal input terminal, W-phase upper bridge signal input terminal, low-voltage power supply terminal, common ground terminal, U-phase upper bridge floating power supply terminal, V-phase upper bridge floating power supply terminal, and W-phase upper bridge floating power supply terminal are arranged in sequence.

11. The power module packaging structure according to claim 9, characterized in that, The fault signal output terminal and the temperature signal output terminal may be multiplexed to the same terminal, or the fault signal output terminal and the temperature signal output terminal may be separated into two independent terminals.

12. The power module packaging structure according to claim 1, characterized in that, The power device is a MOS transistor, with the gate of the MOS transistor serving as the first terminal of the power device, the drain of the MOS transistor serving as the second terminal of the power device and located on the base island corresponding to each power device, and the source of the MOS transistor serving as the third terminal of the power device.

13. The power module packaging structure according to claim 1, characterized in that, The power device is an RC-IGBT, with the gate of the RC-IGBT serving as the first terminal of the power device, the collector of the RC-IGBT serving as the second terminal of the power device and located on the base island corresponding to each power device, and the emitter of the RC-IGBT serving as the third terminal of the power device.

14. The power module packaging structure according to claim 1, characterized in that, The power devices are IGBTs and fast recovery diodes. The gate of the IGBT serves as the first terminal of the power device. The emitter of the IGBT is electrically connected to the anode of the fast recovery diode and serves as the third terminal of the power device. The collector of the IGBT is electrically connected to the cathode of the fast recovery diode and serves as the second terminal of the power device. The collector of the IGBT and the cathode of the fast recovery diode are located on the base islands corresponding to each of the power devices.

15. The power module packaging structure according to claim 2 or 3, characterized in that, One end of the second base island leads out the positive terminal of the DC power supply, one end of the third base island leads out the U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal, one end of the fourth base island leads out the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal, and one end of the fifth base island leads out the W-phase output terminal / W-phase upper bridge drive bias voltage ground terminal.

16. The power module packaging structure according to claim 2 or 3, characterized in that, The encapsulation body also includes a parallel third side and a fourth side, the third side and the fourth side being perpendicular to the first side, the other end of the second base island being connected to the third side of the encapsulation body, and the other end of the fifth base island being connected to the fourth side of the encapsulation body.

17. The power module packaging structure according to claim 6, characterized in that, The positive terminal of the DC power supply, the ground terminal of the U-phase output / U-phase upper bridge drive bias voltage, the ground terminal of the V-phase output / V-phase upper bridge drive bias voltage, the ground terminal of the W-phase output / W-phase upper bridge drive bias voltage, the negative terminal of the U-phase DC power supply, the negative terminal of the V-phase DC power supply, and the negative terminal of the W-phase DC power supply are connected to the driver chip via bonding wires.

18. The power module packaging structure according to claim 6, characterized in that, The positive terminal of the DC power supply, the ground terminal of the U-phase output / U-phase upper bridge drive bias voltage, the ground terminal of the V-phase output / V-phase upper bridge drive bias voltage, and the ground terminal of the W-phase output / W-phase upper bridge drive bias voltage are connected to the driver chip via bonding wires.

19. The power module packaging structure according to claim 1, characterized in that, Inside the driver chip, a first bootstrap diode is connected between the low-voltage power supply terminal and the floating power supply terminal of the U-phase upper bridge drive, a second bootstrap diode is connected between the low-voltage power supply terminal and the floating power supply terminal of the V-phase upper bridge drive, and a third bootstrap diode is connected between the low-voltage power supply terminal and the floating power supply terminal of the W-phase upper bridge drive. The first bootstrap diode, the second bootstrap diode, and the third bootstrap diode are integrated in the driver chip.

20. The power module packaging structure according to claim 1, characterized in that, The power module packaging structure is either surface mount packaging or through-hole packaging.

21. The power module packaging structure according to claim 6 or 9, characterized in that, The power module packaging structure is a plug-in package. The pins leading out from the first side of the plastic package are either in a single row or in a double row, and the pins leading out from the second side of the plastic package are either in a single row or in a double row.

22. The power module packaging structure according to claim 1, characterized in that, The dimensions of the encapsulated body are 15mm~35mm in length and 7~20mm in width.

23. The power module packaging structure according to claim 22, characterized in that, The encapsulated body is 1.5mm to 5mm high.

24. The power module packaging structure according to claim 1, characterized in that, The dimensions of the encapsulated body are 20mm-25mm in length and 10-15mm in width.

25. The power module packaging structure according to claim 24, characterized in that, The encapsulated body is 2-4 mm high.

26. The power module packaging structure according to any one of claims 22 to 25, characterized in that, The center distance between adjacent low-voltage terminals on the first side of the common ground terminal in the power module packaging structure is 0.9mm-2.0mm, with an error range of ±0.15mm. The center distance between adjacent high-voltage terminals on the second side of the common ground terminal in the power module packaging structure is 3.0-5.0mm, with an error range of ±0.15mm.

27. The power module packaging structure according to claim 9, characterized in that, The center distance between the common ground terminal and the U-phase bridge floating power supply terminal is 3.0-5.0mm, with an error range of ±0.15mm.

28. The power module packaging structure according to claim 7, characterized in that, The center distance between the negative terminal of the U-phase DC power supply and the negative terminal of the V-phase DC power supply is 1.0mm-5.0mm, with an error range of ±0.15mm; the center distance between the U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal and the negative terminal of the U-phase DC power supply is 3.0mm-5.0mm, with an error range of ±0.15mm; the center distance between the negative terminal of the V-phase DC power supply and the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal is 3.0mm-5.0mm, with an error range of ±0.15mm; the center distance between adjacent terminals of the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal, the positive terminal of the DC power supply, the W-phase output terminal / W-phase upper bridge drive bias voltage ground terminal, and the negative terminal of the W-phase DC power supply is 3.0mm-5.0mm, with an error range of ±0.15mm.

29. The power module packaging structure according to claim 7, characterized in that, The center distance between the negative terminal of the U-phase DC power supply and the negative terminal of the V-phase DC power supply is 1.5mm-3.0mm, with an error range of ±0.15mm; the center distance between the U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal and the negative terminal of the U-phase DC power supply is 3.0mm-4.5mm, with an error range of ±0.15mm; the center distance between the negative terminal of the V-phase DC power supply and the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal is 3.0mm-4.5mm, with an error range of ±0.15mm; the center distance between adjacent terminals of the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal, the positive terminal of the DC power supply, the W-phase output terminal / W-phase upper bridge drive bias voltage ground terminal, and the negative terminal of the W-phase DC power supply is 3.0mm-4.5mm, with an error range of ±0.15mm.

30. The power module packaging structure according to claim 2 or 3, characterized in that, The first base island is not on the same horizontal plane as the second, third, fourth, and fifth base islands.

Images