Miniature light emitting diode display chip and display device

Abstract

The utility model discloses a micro light-emitting diode display chip and a display device. The micro light-emitting diode display chip comprises a driving substrate; the first display module is arranged on the driving substrate and is used for displaying the first color light; the second display module is arranged on the driving substrate and is used for simultaneously displaying the second color light and the third color light; the second display module and the first display module are arranged in a spaced mode and located on the same plane. According to the display chip, the first display module and the second display module which are located on the same plane are arranged on the driving substrate, and full-color display of the whole chip is achieved through the first color light displayed by the first display module and the second color light and the third color light emitted by the second display module respectively; the problem that image colors are prone to dislocation, blurring or artifacts in the three-color light combination process is solved, and the color display capacity of the display chip is improved.

Description

Technical Field

[0001] This application belongs to the field of micro-display technology, specifically relating to a micro light-emitting diode display chip and display device. Background Technology

[0002] The tri-color combining technology, which uses red, green, and blue light sources to synthesize a color image, offers advantages such as high resolution and high brightness. This technology allows for the control of the color and brightness of each pixel using three independent light sources. Miniature light-emitting diode (LED) display chips, due to their small size, high brightness, low power consumption, fast response, long lifespan, and high luminous efficiency, have become the primary color projection light source in tri-color combining technology. However, the combining process requires precise alignment of each independent light source in both time and space to synthesize a seamless color image. Therefore, problems such as color misalignment, blurring, or artifacts may occur during alignment. Utility Model Content

[0003] Purpose of the utility model: The purpose of this application is to provide a miniature light-emitting diode display chip and display device to solve the above-mentioned problems.

[0004] Technical solution: To achieve the above objectives, the miniature light-emitting diode display chip of this application includes:

[0005] Drive substrate;

[0006] A first display module is disposed on the driving substrate and is used to display a first color light;

[0007] The second display module is disposed on the driving substrate and is used to simultaneously display a second color light and a third color light; the second display module is disposed at an interval from the first display module and is located on the same plane as the first display module.

[0008] In some embodiments, the driving substrate includes a plurality of contacts;

[0009] The first display module includes multiple arrayed first LED units; each first LED unit is individually driven via a corresponding contact; each first LED unit is capable of emitting light of the first color.

[0010] The second display module includes multiple arrayed second LED units; each second LED unit is individually driven by a corresponding contact; a portion of the second LED units emits the second color light, and another portion emits the third color light.

[0011] In some embodiments, the driving substrate includes a plurality of contacts;

[0012] The first display module includes a plurality of first LED units arranged in an array and a first wavelength conversion unit disposed on the first LED units; the first LED units are individually driven through corresponding contacts; the first wavelength conversion unit is capable of converting the light emitted by the first LED units into the first color light;

[0013] The second display module includes multiple arrayed second LED units, a second wavelength conversion unit disposed on a portion of the second LED units, and a third wavelength conversion unit disposed on the remaining portion of the second LED units; the second LED units are individually driven through corresponding contacts; the second wavelength conversion unit can convert a portion of the light emitted by the second LED units into the second color light, and the third wavelength conversion unit can convert the remaining portion of the light emitted by the second LED units into the third color light.

[0014] In some embodiments, it also includes:

[0015] A bonding layer is disposed on the driving substrate; either the first LED unit or the second LED unit is electrically connected to the bonding layer;

[0016] The first display module further includes:

[0017] A first passivation layer covers the side of the bonding layer and the side of the first LED unit;

[0018] A first electrode layer covers the side of the first passivation layer away from the first LED unit, and the first passivation layer electrically isolates the first electrode layer from either the first LED unit or the bonding layer; the first electrode layer is electrically connected to the corresponding contact and a portion of the top surface of the first LED unit, respectively.

[0019] The second display module also includes:

[0020] A second passivation layer covers the side of the bonding layer and the side of the second LED unit;

[0021] The second electrode layer covers the side of the second passivation layer away from the second LED unit, and the second passivation layer electrically isolates the second electrode layer from either the second LED unit or the bonding layer; the second electrode layer is electrically connected to the corresponding contact and a portion of the top surface of the second LED unit, respectively.

[0022] In some embodiments, it also includes:

[0023] A grid layer is disposed on the driving substrate; the grid layer has a plurality of grid holes, the first LED unit and the second LED unit are disposed in the corresponding grid holes, and the first wavelength conversion unit, the second wavelength conversion unit and the third wavelength conversion unit fill the corresponding grid holes;

[0024] A reflective layer, the reflective layer at least covering the sidewalls of the grid apertures;

[0025] An etching barrier layer is provided, which is located between the reflective layer and at least one of the first display module and the second display module, and electrically isolates the reflective layer from either the first display module or the second display module.

[0026] In some embodiments, it also includes:

[0027] A first filter layer is located on the surface of the first wavelength conversion unit away from the first LED unit. The first filter layer is used to filter other colors of light and allow the first color of light to pass through.

[0028] A second filter layer is located on the surface of the second wavelength conversion unit and / or the third wavelength conversion unit away from the second LED unit. The second filter layer is used to filter other colors of light and allow the second color light and / or the third color light to pass through.

[0029] In some embodiments, at least one of the first LED unit and the second LED unit has a stepped structure; the stepped structure includes a first doped semiconductor layer, a second doped semiconductor layer and an active layer located between the two; the stepped structure disconnects and electrically isolates adjacent second doped semiconductor layers, the active layer and the first doped semiconductor layer from each other; the contact is electrically connected to the corresponding first doped semiconductor layer.

[0030] In some embodiments, the size of the first LED unit and / or the second LED unit is 0.1-10 μm; or

[0031] The driving substrate is a silicon-based CMOS driving board or a thin-film field-effect transistor driving board.

[0032] In some embodiments, a display device includes the micro light-emitting diode display chip described herein.

[0033] In some embodiments, the light emission directions of the first display module and the second display module are a first direction, the direction in which the first display module and the second display module are spaced apart is a second direction, and the first direction and the second direction intersect; the display device further includes:

[0034] A first light combining module is provided, which is correspondingly arranged with the first display module in the first direction. The first light combining module is used to convert the light emitted by the first display module from the first direction to the second direction for emission.

[0035] The second light combining module is arranged at a distance from the second display module in the second direction and located on the same plane; the second light combining module and the second display module are arranged correspondingly in the first direction. The second light combining module is used to convert the light emitted by the second display module from the first direction to the second direction for emission, and to allow the light emitted by the first display module to pass through.

[0036] In some embodiments, the first light-combining module has a first optical film facing the first display module; the first optical film's orthogonal projection onto the driving substrate along the first direction covers the first display module.

[0037] The second light combining module has a second optical film facing the second display module; the orthogonal projection of the second optical film on the driving substrate along the first direction covers the second display module.

[0038] In some embodiments, the first optical film is inclined relative to the surface of the first display module; the second optical film is inclined relative to the surface of the second display module; wherein the first optical film and the second optical film are arranged parallel to each other.

[0039] In some embodiments, the tilt angle of either the first optical film or the second optical film relative to the driving substrate is adjusted according to the light-emitting surface requirements, and the parallel arrangement of the first optical film and the second optical film can ensure that the light emitted by different light-emitting modules can overlap on the light-emitting surface.

[0040] In some embodiments, the first doped semiconductor layer and the second doped semiconductor layer may include one or more layers based on IIVI materials such as ZnSe or ZnO or IIIV nitride materials such as GaN, AlN, InN, InGaN, GaP, AlInGaP, AlGaAs, and alloys thereof.

[0041] In some embodiments, the first doped semiconductor layer is a p-type semiconductor layer and the second doped semiconductor layer is an n-type semiconductor layer.

[0042] In some embodiments, an active layer is provided between the first doped semiconductor layer and the second doped semiconductor layer. Specifically, the active layer can be a multi-quantum well structure, which is used to confine electron and hole carriers to the quantum well region. When electrons and holes recombine, the carriers will emit photons after radiative recombination, thus converting electrical energy into light energy.

[0043] Beneficial Effects: Compared with the prior art, the micro light-emitting diode display chip of this application includes: a driving substrate; a first display module disposed on the driving substrate for displaying a first color light; and a second display module disposed on the driving substrate for simultaneously displaying a second color light and a third color light. The second display module is spaced apart from the first display module and is located on the same plane as the first display module. In the display chip of this application, the first display module and the second display module are disposed on the same plane on the driving substrate. By using the first color light displayed by the first display module and the second color light and the third color light emitted by the second display module respectively, the full-color display of the entire chip is achieved, avoiding the problems of image color misalignment, blurring, or artifacts during the three-color light combination process, thus improving the color display capability of the display chip.

[0044] This application also provides a display device, including a micro light-emitting diode display chip, a first light-combining module, and a second light-combining module; wherein, the light emission direction of the first display module and the second display module is a first direction, the direction in which the first display module and the second display module are spaced apart is a second direction, and the first direction and the second direction intersect; the first light-combining module and the first display module are correspondingly arranged in the first direction, and the first light-combining module is used to convert the light emitted by the first display module from the first direction to the second direction for emission; the second light-combining module and the second display module are spaced apart in the second direction and located on the same plane; the second light-combining module and the second display module are correspondingly arranged in the first direction, and the second light-combining module is used to convert the light emitted by the second display module from the first direction to the second direction for emission, and to allow the light emitted by the first display module to pass through. The display device of this application arranges display modules that emit different colors of light on the same driving substrate, so that the light emitted by the display modules is already aligned on the surface along the second direction. The light combining of multiple colors of light can be completed by adjusting the angle and front-back distance of the first light combining module and the second light combining module. Compared with the light combining structure of multiple independent display chips through prisms, the alignment difficulty of this application is greatly improved, and the structure and process of the light combining module are simpler, the production efficiency is significantly improved, and it has a wide range of application scenarios. Attached Figure Description

[0045] The technical solution and other beneficial effects of this application will become apparent from the following detailed description of specific embodiments in conjunction with the accompanying drawings.

[0046] Figure 1A top view of a micro light-emitting diode display chip with the first structure of this application is shown;

[0047] Figure 2 A cross-sectional view of a micro light-emitting diode display chip with the first structure of this application is shown;

[0048] Figure 3 A top view of a micro light-emitting diode display chip with the second structure of this application is shown;

[0049] Figure 4 A cross-sectional view of a micro light-emitting diode display chip with the second structure of this application is shown;

[0050] Figure 5 A schematic diagram of the structure of the display device provided in an embodiment of this application is shown;

[0051] Figure 6 A schematic diagram of the light combining principle of the display device is shown;

[0052] Figure 7 A schematic diagram of the stepped structure of the first LED unit and the second LED unit is shown;

[0053] Reference numerals: 10-Driver substrate, 101-Contact, 11-First display module, 111-First LED unit, 112-First wavelength conversion unit, 113-First passivation layer, 114-First electrode layer, 12-Second display module, 121-Second LED unit, 122-Second wavelength conversion unit, 123-Third wavelength conversion unit, 124-Second passivation layer, 125-Second electrode layer, 20-Bonding layer, 30-Grid layer, 301-Grid aperture, 40-Reflective layer, 50-Etching barrier layer, 60-First filter layer, 70-Second filter layer, 75-Third filter layer, 80-First doped semiconductor layer, 90-Second doped semiconductor layer, 100-Active layer, 1-First light combining module, 2-Second light combining module, 3-First optical film, 4-Second optical film. Detailed Implementation

[0054] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0055] This application discloses numerous different embodiments or examples for implementing various structures. To simplify the disclosure, specific examples of components and arrangements are described herein. These are merely examples and are not intended to limit the scope of this application. Furthermore, reference numerals and / or letters may be repeated in different examples; such repetition is for simplification and clarity and does not in itself indicate a relationship between the various embodiments and / or arrangements discussed. Additionally, this application provides examples of various specific processes and materials, but those skilled in the art will recognize the application of other processes and / or the use of other materials.

[0056] Generally, terms can be understood at least in part according to their usage in the present application. For example, the term "one or more" as used in this application, at least in part according to the present application, can be used to describe any component, structure, or feature in the singular or in the plural form to describe a combination of components, structures, or features. Similarly, terms such as "a," "an," or "the" can also be understood, at least in part according to the present application, to convey either a singular or a plural usage. Furthermore, the term "based on..." can be understood not necessarily to convey an exclusive set of factors, but rather, at least in part according to the present application, may alternatively allow for the presence of additional factors that do not necessarily have to be explicitly described.

[0057] It should be readily understood that the meanings of “on,” “above,” and “on top of” in this application should be interpreted in the broadest sense, such that “on” means not only “directly on something,” but also “on something” including the presence of an intermediate component or layer between the two, and that “on something” or “above something” means not only “on something” or “above something,” but also “on something” or “above something” where no intermediate component or layer between the two exists.

[0058] Furthermore, for ease of description, spatial relative terms such as "below," "under," "lower," "above," and "upper" may be used in this application to describe the relationship of one element or component to another element or component shown in the accompanying drawings. In addition to the orientations described in the figures, the spatial relative terms are also intended to cover different orientations of the device during use or operation. The device may be oriented in other ways, rotated 90°, or otherwise oriented, and the spatial relative descriptive terms used in this application may be interpreted accordingly.

[0059] As used in this application, the term "layer" refers to a portion of material comprising a region of a certain thickness. A layer may extend over the entirety of an underlying or upper layer structure, or may have a extent smaller than that of the underlying or upper layer structure. Furthermore, a layer may be a region of a homogeneous or heterogeneous continuous structure, with a thickness less than the thickness of the continuous structure. For example, a layer may be located between the top and bottom surfaces of a continuous structure, or between any pair of horizontal planes therebetween. A layer may extend horizontally, vertically, and / or along a tapered surface. A substrate may be a single layer, which may include one or more layers, and / or may have one or more layers on, above, and / or below it. A single layer may include multiple layers. For example, a semiconductor layer may include one or more doped or undoped semiconductor layers, and may have the same or different materials.

[0060] In some embodiments, the term driving substrate 10 as used herein refers to the material on which subsequent material layers are added. The driving substrate 10 itself may be patterned. The material added on top of the driving substrate 10 may be patterned or may remain unpatterned. The driving substrate 10 may be, for example, but not limited to, a display substrate including a silicon-based CMOS driving board or a thin-film field-effect transistor driving board, such as a CMOS (Complementary Metal Oxide Semiconductor) backplane or a TFT glass substrate.

[0061] See Figure 1 and Figure 2 This embodiment provides a first type of micro light-emitting diode display chip, comprising: a driving substrate 10, the driving substrate 10 including a plurality of contacts 101; a first display module 11 disposed on the driving substrate 10 for displaying a first color light; the first display module 11 including a plurality of arrayed first LED units 111; the first LED units 111 are individually driven through corresponding contacts 101; the first LED units 111 are capable of emitting the first color light; a second display module 12 disposed on the driving substrate 10 for simultaneously displaying a second color light and a third color light; the second display module 12 including a plurality of arrayed second LED units 121; the second LED units 121 are individually driven through corresponding contacts 101; a portion of the second LED units 121 emits the second color light, and another portion emits the third color light, for example... Figure 2 In the second display module 12, the second LED unit 121 of the left slash shadow emits a second color light, and the second LED unit 121 of the right slash shadow emits a third color light; wherein, the second display module 12 is spaced apart from the first display module 11 and is located on the same plane as the first display module 11.

[0062] It is understood that in the first structure of the micro light-emitting diode display chip of this application, a first display module 11 and a second display module 12 located on the same plane on the driving substrate 10 are arranged, making the entire display system more compact and simplified. Since the first display module 11 displays monochromatic light and the second display module 12 displays two or more colors of light, the chip can display full color and is easier to implement, reducing the fabrication difficulty of the micro light-emitting display device. The first LED unit 111 and the second LED unit 121 are driven individually through corresponding contacts 101. This independent driving design can reduce mutual interference and influence, and improve the accuracy and stability of bonding.

[0063] See Figure 3 and Figure 4 This embodiment provides a second type of micro light-emitting diode display chip, including: a driving substrate 10, which includes a plurality of contacts 101; a first display module 11 disposed on the driving substrate 10 for displaying a first color light; the first display module 11 includes a plurality of arrayed first LED units 111 and a first wavelength conversion unit 112 disposed on the first LED units 111; the first LED units 111 are individually driven through corresponding contacts 101; the first wavelength conversion unit 112 can convert the light emitted by the first LED units 111 into the first color light; and a second display module 12 disposed on the driving substrate 10. The first display module 12 is used to simultaneously display a second color light and a third color light. It includes multiple arrayed second LED units 121, a second wavelength conversion unit 122 disposed on a portion of the second LED units 121, and a third wavelength conversion unit 123 disposed on the remaining portion of the second LED units 121. Each second LED unit 121 is individually driven via a corresponding contact 101. The second wavelength conversion unit 122 can convert a portion of the light emitted by the second LED units 121 into second color light, and the third wavelength conversion unit 123 can convert the remaining portion of the light emitted by the second LED units 121 into third color light. The second display module 12 is spaced apart from the first display module 11 and is located on the same plane as the first display module 11.

[0064] It is understood that in the second structure of the micro LED display chip of this application, since the first display module 11 and the second display module 12 are located on the same plane on the driving substrate 10, the entire display system is more compact and simplified. When the first display module 11 and the second display module 12 are located on the same plane, the connection and wiring between components can be reduced, the possibility of errors and defects in the bonding process can be reduced, and the bonding yield can be improved. At the same time, the array arrangement of the first display module 11 and the second display module 12 also makes the bonding process more regular and consistent, improving the bonding yield. Among them, the light emitted by the first LED unit 111 and the second LED unit 121 is the same, so that the whole screen uses the same basic primary color. Then, the quantum dot process can be used to complete the full-color display of the whole chip. Since the whole surface is the same basic primary color, the first LED unit 111 and the second LED unit 121 can be fabricated simultaneously, and the bonding yield is greatly improved. Each LED unit is driven individually through the corresponding contact 101. This independent driving design can reduce mutual interference and influence, and improve the accuracy and stability of bonding.

[0065] In some embodiments, append Figure 1-4 The "~" symbol indicates that multiple repeated structures have been omitted, and "multiple" specifically refers to a quantity of two or more.

[0066] In some embodiments, see further. Figure 2 or Figure 4 Each type of display chip also includes: a bonding layer 20 disposed on the driving substrate 10; and either the first LED unit 111 or the second LED unit 121 electrically connected to the bonding layer. The bonding layer 20 is an adhesive layer and also serves to conduct electricity by being electrically connected to the LED unit. The bonding layer 20 is made of metal or a metal alloy. For example, the bonding layer 20 may include Au, Ag, Cu, Al, and their alloys, but is not limited to these.

[0067] In some embodiments, see further. Figure 1-4The first display module 11 further includes a first passivation layer 113, which covers the side of the bonding layer 20 and the side of the first LED unit 111; a first electrode layer 114, which covers the side of the first passivation layer 113 away from the first LED unit 111, and the first passivation layer 113 electrically isolates the first electrode layer 114 from either the first LED unit 111 or the bonding layer 20; the first electrode layer 114 is electrically connected to the corresponding contact 101 and a portion of the top surface of the first LED unit 111. The second display module 12 further includes a second passivation layer 124, which covers the side of the bonding layer 20 and the side of the second LED unit 121; a second electrode layer 125, which covers the side of the second passivation layer 124 away from the second LED unit 121, and the second passivation layer 124 electrically isolates the second electrode layer 125 from either the second LED unit 121 or the bonding layer 20; the second electrode layer 125 is electrically connected to the corresponding contact 101 and a portion of the top surface of the second LED unit 121.

[0068] It should be noted that the materials of the first passivation layer 113 and the second passivation layer 124 are selected from inorganic materials or organic materials to isolate and protect the corresponding LED units. Inorganic materials include any one or a combination of SiO2, Al2O3, ZrO2, TiO2, Si3N4, and HfO2; organic materials include any one or a combination of black matrix photoresist, color filter photoresist, polyimide, BANK, overcoat, near-ultraviolet negative photoresist, and styrene.

[0069] It should be noted that the first electrode layer 114 and the second electrode layer 125 are made of at least one of indium tin oxide, Cr, Ti, Pt, Au, Al, Cu, Ge or Ni.

[0070] In some embodiments, see further. Figure 4 The second type of display chip further includes: a grid layer 30 disposed on the driving substrate 10; the grid layer 30 having a plurality of grid holes 301, the first LED unit 111 and the second LED unit 121 being disposed in the corresponding grid holes 301, and the first wavelength conversion unit 112, the second wavelength conversion unit 122 and the third wavelength conversion unit 123 filling the corresponding grid holes 301; a reflective layer 40 covering at least the sidewalls of the grid holes 301; and an etching barrier layer 50 located between the reflective layer 40 and at least one of the first display module 11 and the second display module 12, and electrically isolating the reflective layer 40 from either the first display module 11 or the second display module 12.

[0071] It is understood that the grid layer 30 is located on the driving substrate 10 and has multiple grid holes 301 corresponding to the LED units, which can effectively block light interference from other LED units, improve the contrast and clarity of the chip, and enhance the display effect. The first wavelength conversion unit 112, the second wavelength conversion unit 122, and the third wavelength conversion unit 123 are filled in the grid holes 301, reducing light transmission loss and scattering, and improving the efficiency and accuracy of wavelength conversion. In some embodiments, the grid layer 30 is made of at least one of organic resin, organic black matrix photoresist, color filter photoresist, and polyimide. The etching barrier layer 50 is made of silicon dioxide, silicon nitride, aluminum oxide, etc. The main function of the etching barrier layer 50 is to protect the LED units from accidental etching during the etching process. The etching barrier layer 50 also has a shielding function to prevent the etchant from entering the LED units. The reflective layer 40 is located on the sidewall of the grid hole 301 and can effectively reflect the light emitted by the LED units. Through reflection by the reflective layer 40, light can be guided back to the front of the display screen, improving light utilization efficiency. The reflective layer 40 also reduces light scattering and loss. By reflecting light back to the first display module 11 or the second display module 12, energy loss can be reduced, improving the energy efficiency of the display screen. Furthermore, the etching barrier layer 50 is located between the reflective layer 40 and the first electrode layer 114 or the second electrode layer 125, providing electrical isolation. This prevents electrical short circuits or interference between the electrode layer and the reflective layer 40, improving the stability and reliability of the display screen. The reflective layer 40 is made of reflective materials such as Al and Ag.

[0072] In some embodiments, see further. Figure 4 The reflective layer 40 also covers the surface of the grid layer 30 away from the driving substrate 10, and the surface of the reflective layer 40 away from the grid layer 30 is flush with the surfaces of the first wavelength conversion unit 112, the second wavelength conversion unit 122, and the third wavelength conversion unit 123 away from the driving substrate 10. Located between the grid layer 30 and the wavelength conversion units, the reflective layer 40 effectively reflects light emitted from the LED units. The grid layer 30 and its flush arrangement with the wavelength conversion units ensure a flat surface facing away from the driving substrate 10, and the reflective layer 40 can capture and reflect light to the maximum extent, improving light reflection efficiency. Furthermore, the coverage of the reflective layer 40 and its flush arrangement with the wavelength conversion units prevents it from being blocked or scattered by the grid layer 30 or the wavelength conversion units, thereby maintaining light transmission efficiency and directionality.

[0073] In some embodiments, see further. Figure 4The second type of display chip also includes a first filter layer 60, which is located on the surface of the first wavelength conversion unit 112 away from the first LED unit 111. The first filter layer 60 is used to filter other colors of light and allow the first color of light to pass through. The second filter layer 70 is located on the surface of the second wavelength conversion unit 122 and / or the third wavelength conversion unit 123 away from the second LED unit 121. The second filter layer 70 is used to filter other colors of light and allow the second color of light and / or the third color of light to pass through.

[0074] It should be noted that the light emitted by the first LED unit 111 and the second LED unit 121 is converted into first-color light, second-color light, and third-color light by three different wavelength conversion units. For example, the first-color light is blue light, the second-color light is red light, and the third-color light is green light. This enables full-color display of the display chip. The first filter layer 60 and the second filter layer 70 are respectively made of filter materials. Taking the light emitted by the LED unit as ultraviolet light, where the first-color light can be red, the second-color light can be green, and the third-color light can be blue light, as an example, the first filter layer 60 uses a red filter material, allowing red light to pass through; the second filter layer 70 uses a green filter material, allowing green light to pass through; and the third filter layer 75 uses a blue filter material, allowing blue light to pass through. The filter materials can be organic color filter photoresist, Bragg distributed reflectors, etc.

[0075] In some embodiments, the first wavelength conversion unit 112, the second wavelength conversion unit 122, and the third wavelength conversion unit 123 are made of color conversion materials, including wavelength conversion particles such as phosphors or quantum dots.

[0076] In some embodiments, see further. Figure 7 At least one of the first LED unit 111 and the second LED unit 121 has a stepped structure; the stepped structure includes a first doped semiconductor layer 80, a second doped semiconductor layer 90 and an active layer 100 located between them; the stepped structure disconnects and electrically isolates adjacent second doped semiconductor layers 90, active layers 100 and first doped semiconductor layers 80 from each other; the contact 101 is electrically connected to the corresponding first doped semiconductor layer 80.

[0077] In some embodiments, the first LED unit 111 and the second LED unit 121 may have a trapezoidal structure. That is, the sidewalls of the first LED unit 111 and the second LED unit 121 may be inclined surfaces, and the angle between the sidewalls and the top surface may be an obtuse angle, thereby improving the light-gathering effect of the LED unit. It should be understood that the first LED unit 111 and the second LED unit 121 may also have a columnar structure, in which case the angle between the sidewalls of the first LED unit 111 and the top surface of the second LED unit 121 is a right angle.

[0078] In some embodiments, the first doped semiconductor layer 80 and the second doped semiconductor layer 90 may include one or more layers based on IIVI materials (such as ZnSe or ZnO) or IIIV nitride materials (such as GaN, AlN, InN, InGaN, GaP, AlInGaP, AlGaAs and alloys thereof).

[0079] In some embodiments, the first doped semiconductor layer 80 may be p-type GaN. In some embodiments, the first doped semiconductor layer 80 may be p-type InGaN. In some embodiments, the first doped semiconductor layer 80 may be p-type AlInGaP. In some embodiments, the second doped semiconductor layer 90 may be n-type GaN. In some embodiments, the second doped semiconductor layer 90 may be n-type InGaN. In some embodiments, the second doped semiconductor layer 90 may be n-type AlInGaP.

[0080] In some embodiments, the active layer 100 is disposed between the first doped semiconductor layer 80 and the second doped semiconductor layer 90 and provides light. The active layer 100 is a layer that recombines holes and electrons provided from the first doped semiconductor layer 80 and the second doped semiconductor layer 90 respectively and outputs light of a specific wavelength, and the active layer 100 may have a single quantum well structure or a multiple quantum well (MQW) structure and alternating stacks of well layers and barrier layers.

[0081] In some embodiments, the size of either the first LED unit 111 or the second LED unit 121 is 1 to 10 μm; for example, the size is any one or any two values ​​of 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, 10 μm.

[0082] In some embodiments, for a display chip with a first structure, the first LED unit 111 and the second LED unit 121 can emit any one of red light, green light, blue light, yellow light or ultraviolet light.

[0083] In some embodiments, the driving substrate 10 may include semiconductor materials such as silicon, silicon carbide, zinc nitride, germanium, zinc arsenide, and zinc phosphide. The driving substrate 10 may have driving circuitry formed therein, and the driving substrate 10 may be a CMOS backplane or a thin-film transistor driving board.

[0084] The fabrication method for the first type of display chip includes:

[0085] A driving substrate 10 is provided, and the driving substrate 10 is at least divided into a first light-emitting region and a second light-emitting region. The driving substrate 10 includes a plurality of contacts 101; a first epitaxial layer is formed on the first light-emitting region 200; and a second epitaxial layer is formed on the second light-emitting region.

[0086] A first display module 11 is formed by processing a first epitaxial layer located in the first light-emitting area. The first display module 11 includes a plurality of first LED units 111 arranged in an array. Each first LED unit 111 is driven individually through a corresponding contact 101.

[0087] A second epitaxial layer located in the second light-emitting region is processed to form a second display module 12. The second display module 12 and the first display module 11 are located on the same plane and spaced apart. The second display module 12 includes a plurality of arrayed second LED units 121. Each second LED unit 121 is driven individually through a corresponding contact 101. All first LED units 111 in the first display module 11 emit first color light, the second LED units 121 in the second display module 12 emit second color light, and another part emits third color light.

[0088] The fabrication method for the second type of display chip includes:

[0089] A driving substrate 10 is provided, the driving substrate 10 including a plurality of contacts 101; an LED epitaxial layer is formed on the driving substrate 10;

[0090] The LED epitaxial layer is divided into two processing areas. The LED epitaxial layer in one processing area is etched to form a first display module 11, and the other is processed in the same way to form a second display module 12. The first display module 11 and the second display module 12 are located on the same plane. The first display module 11 includes a plurality of first LED units 111 arranged in an array, and the second display module 12 includes a plurality of second LED units 121 arranged in an array. The first LED units 111 and the second LED units 121 emit light of the same color. The first LED units 111 and the second LED units 121 are driven individually through corresponding contacts 101.

[0091] A first wavelength conversion unit 112 is formed on the side of the first LED unit 111 away from the driving substrate 10, and a second wavelength conversion unit 122 and a third wavelength conversion unit 123 are formed on the side of the second LED unit 121 away from the driving substrate 10. The first wavelength conversion unit 112 can convert the light emitted by the first LED unit 111 into a first color light, the second wavelength conversion unit 122 can convert a portion of the light emitted by the second LED unit 121 into a second color light, and the third wavelength conversion unit 123 can convert the remaining portion of the light emitted by the second LED unit 121 into a third color light.

[0092] It should be noted that the embodiments of this application do not specifically limit the order of steps in the fabrication method of the micro LED display chip. The embodiments of the fabrication method in this application only describe the fabrication process or steps. Device structures, shapes, and materials not described herein can be referred to the embodiments of the micro LED display chip described above, and will not be repeated here.

[0093] See Figure 5 and Figure 6 This application also provides a display device, including a micro light-emitting diode display chip, wherein the light emission direction of the first display module 11 and the second display module 12 is a first direction X, and the direction in which the first display module 11 and the second display module 12 are spaced apart is a second direction Y, and the first direction X and the second direction Y intersect; the display device further includes: a first light-combining module 1, which is correspondingly disposed with the first display module 11 in the first direction X, and is used to convert the light emitted by the first display module 11 from the first direction X to the second direction Y for emission; a second light-combining module 2, which is spaced apart from the first light-combining module 1 in the second direction Y and located on the same plane; the second light-combining module 2 is correspondingly disposed with the second display module 12 in the first direction X, and is used to convert the light emitted by the second display module 12 from the first direction X to the second direction Y for emission, and to allow the light emitted by the first display module 11 to pass through.

[0094] In some embodiments, the first light combining module 1 has a first optical film 3 facing the first display module 11; the first optical film 3 is projected onto the driving substrate 10 along the first direction X and covers the first display module 11; the second light combining module 2 has a second optical film 4 facing the second display module 12; the second optical film 4 is projected onto the driving substrate 10 along the first direction X and covers the second display module 12.

[0095] In some embodiments, the first optical film 3 is inclined relative to the surface of the first display module 11; the second optical film 4 is inclined relative to the surface of the second display module 12; wherein the first optical film 3 and the second optical film 4 are arranged parallel to each other.

[0096] It is understood that the display device of this embodiment arranges light-emitting modules that emit different colors of light on the same driving substrate 10, so that the light emitted by the light-emitting modules is already aligned on the surface along the second direction Y. It is only necessary to adjust the angle and front-back distance of the first light-combining module 1 and the second light-combining module 2 to complete the combination of multiple colors of light. Compared with the light-combining structure of multiple independent display chips through prisms, the alignment difficulty of this embodiment is greatly improved, and the structure of the light-combining module is simpler, which has a wide range of application scenarios.

[0097] by Figure 5 For example, this display device is not only used for three-color light combining, but the driving substrate 10 is not limited to three colors, nor is it limited to three light-emitting modules.

[0098] Specifically, the color combination on the driving substrate 10 can be as follows: the first display module 11 emits light of one color, such as red, green or blue light, to achieve monochromatic light enhancement; the second display module 12 emits light of two colors, such as green and blue light, to achieve tri-color full-color display.

[0099] In some embodiments, the first optical film 3 and the second optical film 4 may be polarizing beam splitters. A polarizing beam splitter is a composite film of multilayer metal or semiconductor materials, which realizes the polarization and spectral separation of light by utilizing the interference effect of multilayer films.

[0100] In some embodiments, the surfaces of the first light-combining module 1 and the second light-combining module 2 may also be made of a single-sided highly reflective transparent material, and the second light-combining module 2 also needs to be made of a material with high transmittance to facilitate the transmission of the first color light. Specifically, the high transmittance material may include transparent glass, silicon nitride, etc.

[0101] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0102] The present application has been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only for the purpose of helping to understand the technical solutions and core ideas of the present application. Those skilled in the art should understand that they can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. These modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A miniature light-emitting diode display chip, characterized in that, include: The driving substrate includes multiple contacts; A first display module is disposed on the driving substrate and is used to display a first color light; The first display module includes multiple first LED units arranged in an array; The first LED unit is driven individually via the corresponding contact; A second display module is disposed on the driving substrate and is used to simultaneously display a second color light and a third color light; the second display module is spaced apart from the first display module and is located on the same plane as the first display module; the second display module includes a plurality of second LED units arranged in an array; the second LED units are individually driven through corresponding contacts. Wherein, the first LED unit can emit the first color of light, a portion of the second LED unit emits the second color of light, and another portion emits the third color of light; or... The first display module further includes a first wavelength conversion unit disposed on the first LED unit, the first wavelength conversion unit being capable of converting the light emitted by the first LED unit into the first color light; the second display module further includes a second wavelength conversion unit disposed on a portion of the second LED unit and a third wavelength conversion unit disposed on the remaining portion of the second LED unit, the second wavelength conversion unit being capable of converting a portion of the light emitted by the second LED unit into the second color light, and the third wavelength conversion unit being capable of converting the remaining portion of the light emitted by the second LED unit into the third color light.

2. The miniature light-emitting diode display chip according to claim 1, characterized in that, Also includes: A bonding layer is disposed on the driving substrate; Either the first LED unit or the second LED unit is electrically connected to the bonding layer; The first display module further includes: A first passivation layer covers the side of the bonding layer and the side of the first LED unit; A first electrode layer covers the side of the first passivation layer away from the first LED unit, and the first passivation layer electrically isolates the first electrode layer from either the first LED unit or the bonding layer; the first electrode layer is electrically connected to the corresponding contact and a portion of the top surface of the first LED unit, respectively. The second display module also includes: A second passivation layer covers the side of the bonding layer and the side of the second LED unit; The second electrode layer covers the side of the second passivation layer away from the second LED unit, and the second passivation layer electrically isolates the second electrode layer from either the second LED unit or the bonding layer; the second electrode layer is electrically connected to the corresponding contact and a portion of the top surface of the second LED unit, respectively.

3. The miniature light-emitting diode display chip according to claim 1, characterized in that, The miniature light-emitting diode display chip also includes: A grid layer is disposed on the driving substrate; the grid layer has a plurality of grid holes, the first LED unit and the second LED unit are disposed in the corresponding grid holes, and the first wavelength conversion unit, the second wavelength conversion unit and the third wavelength conversion unit fill the corresponding grid holes; A reflective layer, the reflective layer at least covering the sidewalls of the grid apertures; An etching barrier layer is provided, which is located between the reflective layer and at least one of the first display module and the second display module, and electrically isolates the reflective layer from either the first display module or the second display module.

4. The miniature light-emitting diode display chip according to claim 3, characterized in that, Also includes: A first filter layer is located on the surface of the first wavelength conversion unit away from the first LED unit. The first filter layer is used to filter other colors of light and allow the first color of light to pass through. A second filter layer is located on the surface of the second wavelength conversion unit and / or the third wavelength conversion unit away from the second LED unit. The second filter layer is used to filter other colors of light and allow the second color light and / or the third color light to pass through.

5. The miniature light-emitting diode display chip according to claim 2, characterized in that, At least one of the first LED unit and the second LED unit has a stepped structure; the stepped structure includes a first doped semiconductor layer, a second doped semiconductor layer, and an active layer located between the two; The stepped structure disconnects and electrically isolates adjacent second doped semiconductor layers, active layers, and first doped semiconductor layers from each other. The contact is electrically connected to the corresponding first doped semiconductor layer.

6. The miniature light-emitting diode display chip according to claim 1, characterized in that, The driving substrate is a silicon-based CMOS driving board or a thin-film field-effect transistor driving board.

7. A display device, characterized in that, The micro light-emitting diode display chip includes any one of claims 1-6.

8. The display device according to claim 7, characterized in that, The light emission direction of the first display module and the second display module is a first direction, the direction in which the first display module and the second display module are spaced apart is a second direction, and the first direction and the second direction intersect. The display device further includes: A first light combining module is provided, which is correspondingly arranged with the first display module in the first direction. The first light combining module is used to convert the light emitted by the first display module from the first direction to the second direction for emission. The second light combining module is arranged at a distance from the first light combining module in the second direction and located on the same plane; the second light combining module and the second display module are arranged correspondingly in the first direction. The second light combining module is used to convert the light emitted by the second display module from the first direction to the second direction for emission, and to allow the light emitted by the first display module to pass through.

9. The display device according to claim 8, characterized in that, The first light-combining module has a first optical film facing the first display module; the first optical film's orthogonal projection on the driving substrate along the first direction covers the first display module; The second light-combining module has a second optical film facing the second display module; The second optical film, projected onto the driving substrate along the first direction, covers the second display module.

10. The display device according to claim 9, characterized in that, The first optical film is inclined relative to the surface of the first display module; the second optical film is inclined relative to the surface of the second display module; wherein the first optical film and the second optical film are arranged parallel to each other.

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