Top heat dissipation power module
By setting up upper bridge pads, lower bridge pads, and extension bridges in the power module, the current capability of the positive, negative, and output pins is balanced, solving the problem of insufficient pin count in the prior art, improving the convenience of drive circuit design and current capability, and meeting the creepage distance requirements.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- JIANGSU APT SEMICONDUCTOR CO LTD
- Filing Date
- 2025-06-05
- Publication Date
- 2026-05-05
AI Technical Summary
The limited number of positive pins and insufficient number of negative pins in existing power modules result in limited current capability. At the same time, the distribution of the upper and lower bridge drive pins is not conducive to the design of the drive circuit.
Design a top heat dissipation power module by setting up an upper bridge pad and a lower bridge pad, and setting an extension bridge between the lower bridge pad and the output pin to balance the current capability of the positive, negative and output pins. The upper bridge gate pin, upper bridge source or emitter pin, lower bridge gate pin, and lower bridge source or emitter pin are located on the same side to meet the requirements of miniaturization while satisfying the creepage distance.
It achieves balanced current capability of the positive, negative and output pins, improves the ease of drive circuit design, and meets creepage distance requirements.
Smart Images
Figure CN224205637U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of semiconductor technology, and in particular to a non-insulated power module with top heat dissipation. Background Technology
[0002] A power module is an integrated component formed by combining and packaging power electronic devices according to their functions. It is mainly used to realize efficient power conversion and control system power transmission. A power module with top heat dissipation typically includes a plastic package, an insulating substrate, pins, and a power chip. According to GB4943.1-2011 "Safety of Information Technology Equipment Part 1: General Requirements", once the material components and the pollution level of the working environment are determined, the creepage distance between pins is proportional to the effective value of the operating voltage. Therefore, this limits the size of the power module and makes it difficult to further reduce it.
[0003] To address the aforementioned issues, existing patent literature includes, for example, an invention patent published on November 10, 2023, entitled "Semiconductor Package Including Embedded Electrical Conductors." The solution is as follows:
[0004] Semiconductor packaging includes:
[0005] A molding compound; a first die pad partially encapsulated in the molding compound and including opposing first and second main surfaces; a second die pad partially encapsulated in the molding compound and including opposing first and second main surfaces; a first semiconductor die partially encapsulated in the molding compound and disposed on the first die pad, including a first contact pad and a second contact pad and connected to the first die pad via the second contact pad; another device partially encapsulated in the molding compound and disposed on the second die pad, including a first contact pad and a second contact pad and connected to the second die pad via the second contact pad; at least one first lead connected to the first contact pad of the first semiconductor die and extending out of the molding compound; at least one second lead connected to the second contact pad of the other device and extending out of the molding compound; and an electrical conductor connected between the at least one first lead and the at least one second lead and completely encapsulated in the molding compound.
[0006] This design is primarily aimed at Q-DPAK packaged products. Q-DPAK is compatible with various circuit topologies, including half-bridge circuits. This structure has two pads on top, with some terminals directly connected to the two pads, and some pins connected by electrical conductors. Although this technology significantly reduces the size, the following problems still exist in practical applications:
[0007] 1. There are 4 positive pins and 6 output pins, but only 2 negative pins, which limits the current capacity due to the number of negative pins.
[0008] 2. The upper bridge drive pins (upper bridge gate pin, upper bridge source / emitter pin) and lower bridge drive pins (lower bridge gate pin, lower bridge source / emitter pin) are located on opposite sides of the plastic package, which is not conducive to the design of the drive circuit. Therefore, how to balance the current capability of the positive, negative, and output pins and improve the ease of drive circuit design is a technical problem that urgently needs to be solved in this case. Utility Model Content
[0009] This utility model addresses the above problems by providing a top heat dissipation power module that balances the current capability of positive, negative, and output pins and improves the ease of drive circuit design.
[0010] The technical solution of this utility model is:
[0011] A top-mounted heat dissipation power module, comprising:
[0012] The upper bridge pad has an upper bridge power chip soldered / sintered on its top surface. One side of the upper bridge pad is connected to a positive terminal pin that extends out of the plastic package. The other side of the upper bridge pad is provided with an upper bridge drive pin, and the upper bridge power chip is electrically connected to the upper bridge drive pin.
[0013] The lower bridge pad has a lower bridge power chip soldered / sintered on its top surface. The lower bridge pad is connected to an output pin extending out of the plastic package on the same side as the upper bridge drive pin. The lower bridge drive pin is located on the same side as the output pin. The lower bridge power chip is electrically connected to the lower bridge drive pin. The top surface of the upper bridge power chip is electrically connected to the lower bridge pad.
[0014] The negative terminal connection bridge is on the same side as the positive terminal pin and is located on the side of the lower bridge pad; the negative terminal connection bridge has a negative terminal pin that extends out of the plastic package, and the top surface of the lower bridge power chip is electrically connected to the negative terminal connection bridge;
[0015] The distance between the output pin and the upper bridge drive pin is less than the distance between the output pin and the lower bridge drive pin; all the output pins are located on the side of the longitudinal centerline of the top heat dissipation power module closer to the upper bridge drive pin.
[0016] Specifically, an extension bridge is provided between the lower bridge pad and the output pin.
[0017] Specifically, a stress buffer groove is provided at the connection between the extension bridge and the lower bridge pad.
[0018] Specifically, the extension bridge is connected to the lower bridge pad via a bonding wire at the front end of the stress buffer groove.
[0019] Specifically, the upper bridge drive pins include those spaced apart:
[0020] The upper bridge gate pin is located on the side of the upper bridge pad away from the positive electrode pin;
[0021] One of the upper bridge source or emitter pins is located on the side of the upper bridge gate pin;
[0022] The lower bridge drive pin includes:
[0023] The lower bridge gate pin is located on the side of the lower bridge pad away from the negative electrode pin;
[0024] The second lower bridge source or emitter pin is located on the side of the lower bridge gate pin.
[0025] Specifically, the upper bridge gate pin is electrically connected to the upper bridge power chip through the upper bridge gate pad in the plastic package;
[0026] The upper bridge source or emitter is electrically connected to the upper bridge power chip through the upper bridge source or emitter pad;
[0027] The lower bridge gate pin is electrically connected to the lower bridge power chip through the lower bridge gate pad;
[0028] The second lower bridge source or emitter pin is electrically connected to the lower bridge power chip through the lower bridge source or emitter pad;
[0029] Specifically, the number of positive and negative pins are equal, and they are symmetrical about the centerline of the encapsulation.
[0030] Specifically, the upper-bridge power chip and the lower-bridge power chip are one or a combination of two of the following: IGBT chip, MOSFET chip, FRD chip, and SBD chip.
[0031] Specifically, the positive pin, output pin, and negative pin are composed of multiple pins of equal width, or a single pin unit.
[0032] Specifically, the width of a single pin is greater than the width of the upper bridge gate pin, the upper bridge source or emitter pin one, the lower bridge gate pin, and the lower bridge source or emitter pin two.
[0033] This invention places the upper bridge gate pin, upper bridge source or emitter pin one, lower bridge gate pin, and lower bridge source or emitter pin two on the same side of the plastic package, and sets the positive and negative pins on the same side, meeting the requirements for miniaturization while also satisfying creepage distance. The layout design of the positive, negative, and output pins improves the ease of driver circuit design and balances the current capabilities of the positive, negative, and output pins. Attached Figure Description
[0034] Figure 1This is a structural schematic diagram of Embodiment 1 of the present invention;
[0035] Figure 2 This is a schematic diagram of the structure of Embodiment 2 of this utility model;
[0036] Figure 3 This is a structural schematic diagram of Embodiment 3 of this utility model;
[0037] Figure 4 This is a structural schematic diagram of Embodiment 4 of this utility model;
[0038] Figure 5 This is a structural schematic diagram of Embodiment 5 of this utility model;
[0039] Figure 6 This is a schematic diagram of the insulating layer and the bottom metal layer structure;
[0040] Figure 7 This is a structural schematic diagram of Embodiment Six of this utility model;
[0041] Figure 8 This is a schematic diagram of the IGBT FRD circuit.
[0042] Figure 9 This is a schematic diagram of a MOSFET circuit.
[0043] 100 in the image represents the plastic sealant.
[0044] 200 is the upper bridge pad, 210 is the upper bridge power chip, and 220 is the positive pin.
[0045] 300 is the lower bridge pad, 310 is the lower bridge power chip, 320 is the extension bridge, 321 is the buffer slot, and 330 is the output pin.
[0046] 400 is the negative terminal connection bridge, and 410 is the negative terminal pin.
[0047] 500 is the upper bridge drive pin, 510 is the upper bridge gate pin, 511 is the upper bridge gate pad, 520 is the upper bridge source or emitter pin one, 521 is the upper bridge source or emitter pad, 600 is the lower bridge drive pin, 610 is the lower bridge gate pin, 611 is the lower bridge gate pad, 620 is the lower bridge source or emitter pin two, and 621 is the lower bridge source or emitter pad. Detailed Implementation
[0048] The embodiments of this utility model are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this utility model, and should not be construed as limiting this utility model.
[0049] In the description of this utility model, it should be understood that the terms "upper," "lower," "left," "right," "vertical," "horizontal," etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model. In the description of this utility model, unless otherwise stated, "a plurality of" means two or more.
[0050] In the description of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.
[0051] This case involves a top-mounted heat dissipation power module, which includes:
[0052] The upper bridge pad 200 has an upper bridge power chip 210 soldered / sintered on its top surface. One side of the upper bridge pad 200 is connected to a positive terminal pin 220 extending out of the plastic package 100. The other side of the upper bridge pad 200 is provided with an upper bridge drive pin 500. The upper bridge power chip 210 and the upper bridge drive pin 500 are electrically connected through bonding wires.
[0053] The lower bridge pad 300 has a lower bridge power chip 310 soldered / sintered on its top surface. The lower bridge pad 300 is connected to an output pin 330 extending out of the plastic package 100 on the same side as the upper bridge drive pin 500. The lower bridge drive pin 600 is provided on the same side as the output pin 330. The lower bridge power chip 310 and the lower bridge drive pin 600 are electrically connected by bonding wires. The top surface of the upper bridge power chip 210 is electrically connected to the lower bridge pad 300 by bonding wires or copper bridges.
[0054] The negative terminal connection bridge 400 is on the same side as the positive terminal pin 220 and is located on the side of the lower bridge pad 300; the negative terminal connection bridge 400 is provided with a negative terminal pin 410 extending out of the plastic package 100, and the top surface of the lower bridge power chip 310 is electrically connected to the negative terminal connection bridge 400 through a bonding wire or a copper bridge.
[0055] The distance between the output pin 330 and the upper bridge drive pin 500 is less than the distance between the output pin 330 and the lower bridge drive pin 600; all output pins 330 are located vertically on the top heat dissipation power module (within a certain distance). Figure 1(The direction is for reference) The center line is located on the side of the upper bridge drive pin 500.
[0056] The circuit topology in this case is a half-bridge circuit. The upper bridge power chip 210 and the lower bridge power chip 310 are one or a combination of two of the following chips: IGBT chip, MOSFET chip, FRD chip, and SBD chip.
[0057] When the power chip is an IGBT chip, the upper bridge gate pin is electrically connected to the gate of the IGBT chip, and the upper bridge source / emitter pin is electrically connected to the emitter of the IGBT chip.
[0058] When the power chip is a MOSFET chip, the upper bridge gate pin is electrically connected to the gate of the MOSFET chip, and the upper bridge source / emitter pin is electrically connected to the source of the MOSFET chip.
[0059] When the power chip is a diode chip such as FRD or SBD, the upper bridge gate pin, upper bridge source / emitter pin, lower bridge gate pin, and lower bridge source / emitter pin are not connected to the chip and do not participate in the operation; the purpose of still setting the upper bridge gate pin, upper bridge source / emitter pin, lower bridge gate pin, and lower bridge source / emitter pin is to share the lead frame and mold with IGBT chips and MOSFET chips, thereby saving development costs and material control costs.
[0060] In this case, the number of positive pins 220 and negative pins 410 are equal, and they are symmetrical about the longitudinal centerline of the encapsulation body 100.
[0061] The structure of this case will be further described below through examples:
[0062] Example 1:
[0063] like Figure 1 As shown, both the upper-bridge power chip and the lower-bridge power chip use MOSFET chips, and an extension bridge 320 is provided between the lower-bridge pad 300 and the output pin 330. In this embodiment, the extension bridge 320, the lower-bridge pad 300, and the output pin 330 are an integral structure, formed by stamping.
[0064] The positive pin 220 and the upper bridge pad 200 are integrated into one piece and are stamped together.
[0065] The negative pins 410 are connected together inside the plastic package 100, and the connection part is the negative connection bridge 400.
[0066] The upper bridge drive pin 500 includes interval settings:
[0067] The upper bridge gate pin 510 is located on the side of the upper bridge pad 200 away from the positive pin 220;
[0068] The source or emitter pin of the upper bridge is 520, which is located on the side of the gate pin of the upper bridge 510.
[0069] The lower bridge driver pin 600 includes spaced settings:
[0070] The lower bridge gate pin 610 is located on the side of the lower bridge pad 300 away from the negative electrode pin 410;
[0071] The lower bridge source or emitter pin 620 is located on the side of the lower bridge gate pin 610.
[0072] The positive pin 220, the output pin 330, and the negative pin 410 are composed of multiple pins of equal width.
[0073] Figure 1 In this configuration, the gate of the upper-bridge power chip 210 is electrically connected to the upper-bridge gate pin 510 via a bonding wire, and the source of the upper-bridge power chip 210 is electrically connected to the upper-bridge source or emitter pin 520 via a bonding wire. The source of the upper-bridge power chip 210 is also electrically connected to the extension bridge 320 via a bonding wire or a copper bridge. The gate of the lower-bridge power chip 310 is electrically connected to the lower-bridge gate pin 610 via a bonding wire, and the source of the lower-bridge power chip 310 is electrically connected to the lower-bridge source or emitter pin 620 via a bonding wire. The source of the lower-bridge power chip 310 is also electrically connected to the lower negative terminal connection bridge 400 via a bonding wire or a copper bridge.
[0074] Specifically, when the upper-bridge power chip 210 is an IGBT chip or a MOSFET chip, it is an upper-bridge IGBT or an upper-bridge MOSFET.
[0075] When the upper bridge power chip 210 is an IGBT chip, the collector of the upper bridge power chip 210 is soldered or sintered on the top surface of the upper bridge pad 200. The gate of the upper bridge power chip 210 is electrically connected to the upper bridge gate pin 510 through a bonding wire. The emitter of the upper bridge power chip 210 is electrically connected to the upper bridge source or emitter pin 520 through a bonding wire. The emitter of the upper bridge power chip 210 is also electrically connected to the extension bridge 320 through a bonding wire or a copper bridge. When the upper bridge power chip 210 is a MOSFET chip, the drain of the upper bridge power chip 210 is soldered or sintered on the top surface of the upper bridge pad 200. The gate of the upper bridge power chip 210 is electrically connected to the upper bridge gate pin 510 through a bonding wire. The source of the upper bridge power chip 210 is electrically connected to the upper bridge source or emitter pin 520 through a bonding wire. The source of the upper bridge power chip 210 is also electrically connected to the extension bridge 320 through a bonding wire or a copper bridge.
[0076] When the lower-bridge power chip 310 is an IGBT chip, the collector of the lower-bridge power chip 310 is soldered or sintered on the top surface of the lower-bridge pad 300. The gate of the lower-bridge power chip 310 is electrically connected to the lower-bridge gate pin 610 through a bonding wire. The emitter of the lower-bridge power chip 310 is electrically connected to the lower-bridge source or emitter pin 620 through a bonding wire. The emitter of the lower-bridge power chip 310 is also electrically connected to the negative pin 410 through a bonding wire or a copper bridge. When the lower-bridge power chip 310 is a MOSFET chip, the drain of the lower-bridge power chip 310 is soldered or sintered on the top surface of the lower-bridge pad 300. The gate of the lower-bridge power chip 310 is electrically connected to the lower-bridge gate pin 610 through a bonding wire. The source of the lower-bridge power chip 310 is electrically connected to the lower-bridge source or emitter pin 620 through a bonding wire. The source of the lower-bridge power chip 310 is also electrically connected to the negative pin 410 through a bonding wire or a copper bridge.
[0077] In this design, at least the bottom surface of the upper bridge pad 200 is exposed outside the molded package, and a positive pin extends partially from the lower side of the upper bridge pad 200. At least the bottom surface of the lower bridge pad 300 is exposed outside the molded package, and an output pin 330 extends partially from the side of the lower bridge pad 300.
[0078] Positive pin 220, negative pin 410, and output pin 330 extend from the plastic package 100, with positive pin 220 and negative pin 410 located on one side of the plastic package 100 and output pin 330 located on the other side of the plastic package 100. In order to improve the overcurrent capability of the power pins (positive pin 220, negative pin 410, and output pin 330), this embodiment sets four positive pins, four output pins, and four negative pins.
[0079] Considering the creepage distance requirements, since there is no high voltage between the upper bridge gate pin 510, the upper bridge source or emitter pin 520 and the output pin 330, all output pins 330 are placed near the upper bridge gate pin 510 or the upper bridge source / emitter pin 520.
[0080] There is a high voltage between the output pin 330 and the lower bridge gate pin 610 and the lower bridge source or emitter pin 620, so the lower bridge gate pin 610 and the lower bridge source or emitter pin 620 are located on the side away from the output pin 330.
[0081] The distance between the output pin 330 and the upper bridge drive pin 500 is less than the distance between the output pin 330 and the lower bridge drive pin 600; all output pins 330 are located on the side of the top heat dissipation power module centerline close to the upper bridge drive pin 500.
[0082] In this embodiment, considering the structure and layout of the upper bridge power chip 210, the upper bridge gate pin 510, the upper bridge source or emitter pin 520, and the output pin 330 are arranged continuously on one side of the upper bridge power chip 210; if the structure and layout of the upper bridge power chip 210 are different, the pin arrangement can also be the upper bridge source or emitter pin 520, the upper bridge gate pin 510, and the output pin 330 in sequence.
[0083] Similarly, considering the structure and layout of the lower bridge power chip 310, the lower bridge gate pin 610 and the lower bridge source or emitter pin 620 are arranged continuously on one side of the lower bridge power chip 310, and the distance from the output pin 330 is from near to far. If the structure and layout of the lower bridge power chip 310 are different, the pin arrangement can also be the lower bridge source or emitter pin 620 and the lower bridge gate pin 610.
[0084] In this embodiment, the molding compound 100 is made of epoxy material, but it can also be other encapsulation materials with insulating functions. Parts of each pin extend out of the molding compound 100, and at least the bottom surfaces of the upper bridge pad 200 and the lower bridge pad 300 are exposed inside the molding compound 100, while the rest are all encapsulated inside the molding compound 100.
[0085] Example 2:
[0086] like Figure 2 As shown, this embodiment is an improvement on Embodiment 1, specifically, a stress buffer groove 321 is provided at the connection between the extension bridge 320 and the lower bridge pad 300. During the manufacturing process, since the positions of the lower bridge pad 300 and the output pin 330 are relatively fixed, when their positions shift due to deformation, the stress buffer groove 321 can absorb the pressure from tension or compression. The structure of the stress buffer groove 321 can be a single rectangular groove opening towards the lower bridge pad 300, or it can be multiple rectangular grooves; the opening direction of the stress buffer groove 321 can also be away from the lower bridge pad 300; the stress buffer groove 321 can be rectangular, arc-shaped, or semi-circular.
[0087] Example 3:
[0088] like Figure 3 As shown, this embodiment is based on the structure of embodiment two, but uses a different MOSFET chip layout to replace the MOSFET chip of embodiment one.
[0089] The gate of the upper bridge power chip 210 is electrically connected to the upper bridge gate pin 510 through a bonding wire, the source of the upper bridge power chip 210 is electrically connected to the upper bridge source or emitter pin 520 through a bonding wire, and the source of the upper bridge power chip 210 is electrically connected to the extension bridge 320 through a bonding wire or copper bridge 3.
[0090] The gate of the lower-bridge power chip 310 is electrically connected to the lower-bridge gate pin 610 via a bonding wire. The source of the lower-bridge power chip 310 is electrically connected to the lower-bridge source or emitter pin 620 via a bonding wire. The source of the lower-bridge power chip 310 is also electrically connected to the negative terminal connection bridge 400 via a bonding wire or a copper bridge.
[0091] Figure 3 In this process, since the output pin 330 and the lower bridge pad 300 need to be connected through the extension bridge 320, and the width of the extension bridge 320 is limited, in order to avoid introducing a large resistance, a bonding wire is set at the position of the extension bridge 320 near the output pin 330 to connect with the lower bridge pad 300.
[0092] Figure 3 In this embodiment, the lower bridge source or emitter pin 620 is closer to the output pin 330, and the lower bridge gate pin 610 is adjacent to the lower bridge source / emitter pin 620 and is positioned away from the output pin 330.
[0093] Example 4:
[0094] like Figure 4 As shown, this embodiment is based on the structure of Embodiment 3, with the positive pin 220, output pin 330, and negative pin 410 each configured as a single pin unit. Since the positive pin 220, negative pin 410, and output pin 330 are power pins, they will carry a large current during operation. Therefore, it is necessary to minimize the resistance of the power pins. By configuring multiple separate positive pins 220, multiple separate negative pins 410, and multiple separate output pins 330 into a single pin unit, the cross-sectional area of the power pins is increased while ensuring electrical safety, thus improving the overcurrent capability.
[0095] Furthermore, the width of each pin is greater than the width of the upper bridge gate pin 510, the upper bridge source or emitter pin 1 520, the lower bridge gate pin 610, and the lower bridge source or emitter pin 2 620.
[0096] Example 5
[0097] like Figure 5 As shown, the power chip is a MOSFET. The upper gate pin 510 is electrically connected to the upper power chip 210 through the upper gate pad 511 inside the plastic package 100. That is, the upper power chip 210 is connected to the upper gate pad 511 through a bonding wire. The upper gate pin 510 and the output pin 330 are arranged in the same direction. One end is soldered to the upper gate pad 511, and the other end extends out of the plastic package 100.
[0098] The upper bridge source or emitter pin 520 is electrically connected to the upper bridge power chip 210 through the upper bridge source or emitter pad 521. That is, the upper bridge source / emitter pad is located on the side of the upper bridge pad 200 away from the positive pin 220. The upper bridge power chip 210 is connected to the upper bridge source / emitter pad 511 through a bonding wire.
[0099] Specifically, the source or emitter pin 510 of the upper bridge is oriented in the same direction as the output pin 330. One end of the source or emitter pin 520 of the upper bridge is soldered to the source or emitter pad 511 of the upper bridge, and the other end extends out of the plastic package 100.
[0100] The lower bridge gate pin 610 is electrically connected to the lower bridge power chip 310 via the lower bridge gate pad 611; specifically:
[0101] The lower bridge gate pad 611 is located on the side of the lower bridge pad 300 away from the negative terminal pin 410 and is arranged in the same direction as the output pin 330; the lower bridge power chip 310 is connected to the lower bridge gate pad 611 through a bonding wire; one end of the lower bridge gate pin 610 is soldered to the lower bridge gate pad 611, and the other end extends out of the plastic package 100.
[0102] The lower bridge source or emitter pin 620 is electrically connected to the lower bridge power chip 310 via the lower bridge source or emitter pad 621; specifically:
[0103] The lower bridge source or emitter pad 621 is located on the side of the lower bridge pad 300 away from the negative electrode pin 410 and is oriented in the same direction as the output pin 330; the lower bridge power chip 310 is connected to the upper bridge source or emitter pad 621 through a bonding wire; one end of the lower bridge source or emitter pin 620 is soldered to the upper bridge source or emitter pad 621, and the other end extends out of the plastic package 100.
[0104] Figure 5 In the embodiments, with Figure 1 Compared to the previous structure, the lower bridge gate pin 610 is closer to the output pin 330. The lower bridge source or emitter pin 620 is adjacent to the lower bridge gate pin 610 and is positioned away from the output pin 330. Simultaneously, the three output pins 330 are directly electrically connected to the lower bridge pad 300. The negative terminal connection bridge 400 has an L-shaped structure and is located within the molding compound 100. One end of the three negative terminal pins 410 is located within the molding compound 100 and electrically connected to the negative terminal connection bridge 400, while the other end is located outside the molding compound 100. The number of positive terminal pins 220 is equal to that of the negative terminal pins 410, and they are symmetrically arranged along the center line. One end is located within the molding compound 100 and electrically connected to the upper bridge pad 200, while the other end is located outside the molding compound 100.
[0105] The upper bridge pad 200, lower bridge pad 300, upper bridge gate pad 511, upper bridge source or emitter pad 520, lower bridge gate pad 611, lower bridge source or emitter pad 621, and negative electrode connection bridge 400 are all separate structures, located on the same plane, and their other sides are brazed, sintered, or bonded to the insulating layer.
[0106] The upper bridge pad 200, lower bridge pad 300, upper bridge gate pad 511, upper bridge source / emitter pad 520, lower bridge gate pad 611, lower bridge source or emitter pad 621, and negative electrode connection bridge 400 are made of copper or aluminum. The insulating layer is made of Al2O3, AlN, Si3N4, or epoxy.
[0107] At least one bottom metal layer, made of copper or aluminum, is brazed, sintered, or bonded to the other side of the insulation layer, and at least the top surface of the bottom metal layer is exposed outside the encapsulation. Figure 6 As shown.
[0108] Example 6:
[0109] like Figure 7 As shown, the power chip is a Si-based MOSFET chip. This embodiment is mainly based on embodiment five, but sets the positive, output and negative pins as a single pin unit. In other words, the corresponding pins of embodiment five are merged, which improves the overcurrent capability of the power pin while meeting electrical safety requirements.
[0110] In this embodiment, the negative terminal connection bridge 400 has an L-shaped structure and surrounds the side of the lower bridge power chip near the negative terminal pin.
[0111] In summary, in the pin configuration of this case, the upper bridge gate pin 510, the upper bridge source or emitter pin 1 520, the output pin 330, the lower bridge gate pin 610, and the lower bridge source or emitter pin 2 620 are distributed on the other side of the plastic package 100 opposite to the positive pin 220 and the negative pin 410.
[0112] The pin arrangement can be any of the following groups:
[0113] The pin arrangement is as follows: upper bridge gate pin 510, upper bridge source or emitter pin 1 520, output pin 330, lower bridge gate pin 610, and lower bridge source or emitter pin 2 620.
[0114] Alternatively, the pin arrangement order is: upper bridge source / emitter pin 520, upper bridge gate pin 510, output pin 330, lower bridge source / emitter pin 620, and lower bridge gate pin 610.
[0115] Alternatively, the pin arrangement order is: upper bridge source / emitter pin 520, upper bridge gate pin 510, output pin 330, lower bridge gate pin 610, and lower bridge source / emitter pin 620.
[0116] Alternatively, the pin arrangement can be as follows: upper bridge gate pin 510, upper bridge source / emitter pin 520, output pin 330, lower bridge source / emitter pin 620, and lower bridge gate pin 610.
[0117] Regarding the information disclosed in this case, the following points need to be clarified:
[0118] (1) The accompanying drawings of the embodiments disclosed in this case only involve the structures involved in the embodiments disclosed in this case; other structures can refer to the general design.
[0119] (2) Where there is no conflict, the embodiments and features disclosed in this case can be combined with each other to obtain new embodiments;
[0120] The above are merely specific embodiments disclosed in this case, but the scope of protection of this disclosure is not limited thereto. The scope of protection disclosed in this case shall be determined by the scope of protection of the claims.
Claims
1. A top-mounted heat dissipation power module, characterized in that, include: The upper bridge pad (200) has an upper bridge power chip (210) on its top surface. One side of the upper bridge pad (200) is connected to a positive terminal pin (220) that extends out of the plastic package (100). The other side of the upper bridge pad (200) is provided with an upper bridge drive pin (500). The lower bridge pad (300) has a lower bridge power chip (310) soldered / sintered on its top surface. The lower bridge pad (300) is connected to an output pin (330) extending out of the plastic package (100) on the same side as the upper bridge drive pin (500). The lower bridge drive pin (600) is provided on the same side as the output pin (330). The top surface of the upper bridge power chip (210) is electrically connected to the lower bridge pad (300). The negative terminal bridge (400) is on the same side as the positive terminal pin (220) and located on the side of the lower bridge pad (300); the negative terminal bridge (400) is provided with a negative terminal pin (410) extending out of the plastic package (100), and the top surface of the lower bridge power chip (310) is electrically connected to the negative terminal bridge (400); The distance between the output pin (330) and the upper bridge drive pin (500) is less than the distance between the output pin (330) and the lower bridge drive pin (600); all the output pins (330) are located on the side of the top heat dissipation power module centerline close to the upper bridge drive pin (500).
2. The top heat dissipation power module as described in claim 1, characterized in that, The upper bridge power chip (210) is electrically connected to the upper bridge drive pin (500), and the lower bridge power chip (310) is electrically connected to the lower bridge drive pin (600).
3. A top heat dissipation power module as described in claim 1, characterized in that, An extension bridge (320) is provided between the lower bridge pad (300) and the output pin (330).
4. A top heat dissipation power module as described in claim 3, characterized in that, The connection between the extension bridge (320) and the lower bridge pad (300) is provided with a stress buffer groove (321).
5. A top heat dissipation power module as described in claim 4, characterized in that, The extension bridge (320) is connected to the lower bridge pad (300) via a bonding wire at the front end of the stress buffer groove.
6. A top heat dissipation power module according to claim 2, characterized in that, The upper bridge drive pin (500) includes spaced-out pins: The upper bridge gate pin (510) is located on the side of the upper bridge pad (200) away from the positive electrode pin (220); The upper bridge source or emitter pin 1 (520) is located on the side of the upper bridge gate pin (510); The lower bridge drive pin (600) includes: The lower bridge gate pin (610) is located on the side of the lower bridge pad (300) away from the negative electrode pin (410); The second source or emitter pin of the lower bridge (620) is located on the side of the gate pin of the lower bridge (610).
7. A top heat dissipation power module according to claim 6, characterized in that, The upper bridge gate pin (510) is electrically connected to the upper bridge power chip (210) through the upper bridge gate pad (511) inside the plastic package (100); The upper bridge source or emitter pin 1 (520) is electrically connected to the upper bridge power chip (210) through the upper bridge source or emitter pad (521); The lower bridge gate pin (610) is electrically connected to the lower bridge power chip (310) through the lower bridge gate pad (611); The lower bridge source or emitter pin 2 (620) is electrically connected to the lower bridge power chip (310) through the lower bridge source or emitter pad (621).
8. A top heat dissipation power module according to claim 1, characterized in that, The number of positive pins (220) and negative pins (410) are equal and symmetrical about the centerline of the encapsulation (100).
9. A top heat dissipation power module according to claim 1, characterized in that, The upper bridge power chip (210) and the lower bridge power chip (310) are one or a combination of two of the following chips: IGBT chip, MOSFET chip, FRD chip, and SBD chip.
10. A top heat dissipation power module according to claim 1, characterized in that, The positive pin (220), output pin (330), and negative pin (410) are composed of multiple pins of equal width or a single pin unit; The width of the individual pin is greater than the width of the upper bridge gate pin (510), the upper bridge source or emitter pin one (520), the lower bridge gate pin (610), and the lower bridge source or emitter pin two (620).