A solar cell and deposition apparatus

Abstract

The utility model discloses a solar cell and deposition equipment relates to solar cell technical field, this solar cell includes: silicon base is provided with first carrier collection layer in the first region of silicon base first main surface, is provided with second carrier collection layer in the second region of silicon base first main surface and passivation layer, first region and second region are alternately arranged and are provided with interval region between, the conductive type of first carrier collection layer and second carrier collection layer is opposite, the main surface and side of passivation layer cover first carrier collection layer, the main surface and side of second carrier collection layer and interval region. This embodiment can effectively improve the passivation ability of first carrier collection layer side and second carrier collection layer side, improve the overall passivation performance of solar cell.

Description

Technical Field

[0001] This utility model relates to the field of solar cell technology, and in particular to a solar cell and deposition equipment. Background Technology

[0002] For existing back-contact solar cells, passivation layers are typically fabricated on the outer side of the carrier collection layer and in the spacer region to improve the overall passivation performance of the solar cell. However, due to limitations of existing deposition processes, the passivation layer can only be deposited from top to bottom. Therefore, the formed passivation layer only exists on the upper surface of the carrier collection layer and the spacer region. For example, as... Figure 1 As shown, the passivation layer 04 can only be deposited on the surface along the direction of gas deposition. Since the thickness of the deposited layer is much smaller than the depth of the spacer region, an effective passivation layer cannot be formed on the sidewall of the spacer region, so the overall passivation performance of the solar cell still needs to be improved. Utility Model Content

[0003] In view of this, the present invention provides a solar cell and a deposition apparatus. By covering the main surface and side surface of the first carrier collection layer, the main surface and side surface of the second carrier collection layer, and the interval area with a passivation layer, the passivation capability of the side surface of the first carrier collection layer and the side surface of the second carrier collection layer can be effectively improved, thereby improving the overall passivation performance of the solar cell.

[0004] To solve the above-mentioned technical problems, this utility model provides the following technical solution:

[0005] In a first aspect, the present invention provides a solar cell, comprising: a silicon substrate, a first carrier collection layer disposed in a first region of a first main surface of the silicon substrate, a second carrier collection layer disposed in a second region of the first main surface of the silicon substrate, and a passivation layer; wherein the first region and the second region are alternately arranged and a gap region is disposed between them; the first carrier collection layer and the second carrier collection layer have opposite conductivity types; the passivation layer covers the main surface and side surface of the first carrier collection layer, the main surface and side surface of the second carrier collection layer, and the gap region.

[0006] Optionally, the thickness of the passivation layer corresponding to the main surface of the first carrier collection layer and / or the main surface of the second carrier collection layer and / or the spacing region is 3 nm to 7 nm; and / or, the thickness of the passivation layer corresponding to the side surface of the first carrier collection layer is 3 nm to 7 nm; and / or, the thickness of the passivation layer corresponding to the side surface of the second carrier collection layer is 3 nm to 7 nm.

[0007] Optionally, the first carrier collection layer includes a tunneling oxide layer and a first doped layer doped with a first dopant element stacked from the inside to the outside; or, the first carrier collection layer includes an intrinsic polysilicon layer and a first doped layer doped with a first dopant element stacked from the inside to the outside; the second carrier collection layer includes a tunneling oxide layer and a second doped layer doped with a second dopant element stacked from the inside to the outside; wherein the second dopant element has the opposite doping type to the first dopant element; or, the second carrier collection layer includes an intrinsic polysilicon layer and a second doped layer doped with the second dopant element stacked from the inside to the outside.

[0008] Secondly, this utility model provides a method for depositing solar cells, comprising: step 1, placing a cell substrate in the deposition chamber of a deposition apparatus; step 2, controlling the deposition apparatus to release deposition gas, and using the deposition apparatus to control the circumferential rotation of the cell substrate, depositing a passivation layer of predetermined thickness on the side surface and outer surface of the first carrier collection layer, the side surface and outer surface of the second carrier collection layer, and the interval region of the cell substrate.

[0009] Thirdly, this utility model provides a deposition apparatus for solar cells, comprising: a driving part, a deposition part, and a supporting part; wherein, the supporting part is used to place a battery substrate; the driving part applies a driving force to the supporting part, adjusts the position of the supporting part relative to the deposition part, and drives the supporting part to rotate when the supporting part is located below the deposition part, so that the supporting part rotates in its circumferential direction; the deposition part is used to deposit a film layer on the battery substrate placed on the supporting part.

[0010] The technical solution of the first aspect of the above-mentioned utility model has the following advantages or beneficial effects: by covering the main surface and side surface of the first carrier collection layer, the main surface and side surface of the second carrier collection layer, and the interval area with the passivation layer, the passivation capability of the side surface of the first carrier collection layer and the side surface of the second carrier collection layer can be effectively improved, thereby improving the overall passivation performance of the solar cell. Attached Figure Description

[0011] The accompanying drawings are provided to better understand this utility model and do not constitute an undue limitation thereof. Wherein:

[0012] Figure 1 This is a schematic diagram of the cross-sectional structure of a solar cell based on existing technology;

[0013] Figure 2 This is a schematic diagram of the cross-sectional structure of a solar cell according to an embodiment of the present invention;

[0014] Figure 3This is a schematic diagram of the main process of the solar cell deposition method according to an embodiment of the present invention;

[0015] Figure 4 This is a schematic diagram of the deposition process of a solar cell deposition method according to an embodiment of the present invention;

[0016] Figure 5 This is a schematic flowchart of the first deposition cycle according to an embodiment of the present invention;

[0017] Figure 6 This is a schematic diagram of a specific process of the first deposition cycle according to an embodiment of the present invention;

[0018] Figure 7 This is a schematic diagram of a process for depositing a passivation layer according to an embodiment of the present invention;

[0019] Figure 8 This is a rough structural schematic diagram of a solar cell deposition apparatus according to an embodiment of the present invention;

[0020] Figure 9 This is a schematic diagram of the specific structure of the drive unit according to an embodiment of the present utility model;

[0021] Figure 10 A schematic diagram of the lifting assembly in the non-lifted state according to an embodiment of the present utility model;

[0022] Figure 11 A schematic diagram of the specific structure of the lifting assembly in the raised state according to an embodiment of the present utility model;

[0023] Figure 12 A schematic diagram illustrating the positional relationship between the threaded assembly and the outer shell according to an embodiment of the present utility model;

[0024] Figure 13 A schematic diagram of the overall structure of the lifting sleeve according to an embodiment of the present utility model;

[0025] Figure 14 A schematic diagram of the thread structure of the threaded assembly according to an embodiment of the present utility model;

[0026] Figure 15 The specific structure of the connecting component and its positional relationship with the support part according to the embodiments of this utility model;

[0027] Figure 16 A schematic diagram of the lower surface structure of the support portion according to an embodiment of the present utility model;

[0028] Figure 17 This is a schematic diagram of the second deposition cycle according to an embodiment of the present invention.

[0029] The attached figures are labeled as follows:

[0030] 01-Silicon substrate; 02-First carrier collection layer; 03-Second carrier collection layer; 04-Passivation layer;

[0031] 001 - Battery substrate;

[0032] 1-Drive unit; 11-Lifting structure; 111-Power component; 112-Lifting component; 1121-Lifting sleeve; 1122-Snap-on; 1123-Housing shell; 1124-Threaded assembly; 1125-Electromagnetic component; 113-Connecting assembly; 1131-Main body; 1132-Connecting shaft;

[0033] 12-Transmission structure; 121-Transmission frame; 122-Conveyor belt;

[0034] 2-Sedimentation section;

[0035] 3-Support part; 31-Connecting through hole;

[0036] 100-Slide groove; 200-Slider; 300-Main shaft; 400-Auxiliary shaft; 500-Base; 600-Rotary thread; 700-Flat thread. Detailed Implementation

[0037] To facilitate and clearly describe the deposition apparatus of this utility model for solar cells, exemplary embodiments of this utility model are described below with reference to the accompanying drawings, including various details of the embodiments of this utility model to aid understanding. These should be considered merely exemplary. Therefore, those skilled in the art will recognize that various changes and modifications can be made to the embodiments described herein without departing from the scope and spirit of this utility model. Similarly, for clarity and brevity, descriptions of well-known functions and structures are omitted in the following description.

[0038] Figure 2 The diagram shows a cross-sectional view of a solar cell provided in the first aspect of this utility model. Figure 2As shown, the system includes: a silicon substrate 01; a first carrier collection layer 02 disposed in a first region of a first main surface of the silicon substrate 01; a second carrier collection layer 03 disposed in a second region of the first main surface of the silicon substrate 01; and a passivation layer 04. The first and second regions are alternately arranged and separated by a gap. The first and second carrier collection layers 02 and 03 have opposite conductivity types. The passivation layer 04 covers the main surface and side surfaces of the first carrier collection layer 02, the second carrier collection layer 03, and the gap regions. The main surface can be understood as the surface away from the silicon substrate 01. Specifically, the passivation layer 04 covering the main surface of the first carrier collection layer 02, the main surface of the second carrier collection layer 03, and the gap regions is a horizontally extending passivation layer, while the passivation layers covering the side surfaces of the first and second carrier collection layers 02 and 03 are vertically extending passivation layers. It should be noted that the interval region is formed as a trench relative to the first carrier collection layer 02 and the second carrier collection layer 03, such that the first carrier collection layer 02 and the second carrier collection layer 03 have a main surface and a side surface.

[0039] It needs to be explained that, Figure 1 and Figure 2 The carrier collection layer and the spacer region in this invention are conventional structures found in existing BC batteries. Since the first carrier collection layer 02 and the second carrier collection layer 03 have opposite conductivity types, a spacer region is needed to prevent short circuits between them. Specifically, this invention does not improve the structure of the carrier collection layer and the spacer region; the main improvement lies in the placement of the outer passivation layer 04. (Comparison) Figure 2 and Figure 1 As can be seen, compared with the prior art solar cells, the present invention embodiment has a passivation layer 04 prepared on the side of the adjacent spacing region of the first carrier collection layer 02 and the side of the adjacent spacing region of the second carrier collection layer 03, which can effectively cover the outer periphery of the first carrier collection layer 02 and the second carrier collection layer 03, thereby improving the overall passivation performance of the solar cell.

[0040] In one optional embodiment, the thickness of the portion of the passivation layer 04 corresponding to the main surface of the first carrier collection layer 02 and / or the main surface of the second carrier collection layer 03 and / or the spacer region is 3nm to 7nm, such as 3nm, 4nm, 5nm, 6nm, 7nm, etc. It is understood that the passivation layer 04 located outside the main surface of the first carrier collection layer 02, outside the main surface of the second carrier collection layer 03 and the spacer region is usually deposited synchronously based on the same deposition process. Therefore, the thickness of the portion of the passivation layer 04 corresponding to the main surface of the first carrier collection layer 02, outside the main surface of the second carrier collection layer 03 and the spacer region is usually the same.

[0041] In one optional embodiment, the thickness of the portion of the passivation layer 04 corresponding to the side of the first carrier collection layer 02 is 3nm to 7nm, for example, 3nm, 4nm, 5nm, 6nm, 7nm, etc.; the thickness of the portion of the passivation layer 04 corresponding to the side of the second carrier collection layer 03 is 3nm to 7nm, for example, 3nm, 4nm, 5nm, 6nm, 7nm, etc. It is understood that both the first carrier collection layer 02 and the second carrier collection layer 03 include two symmetrically arranged sides. Since the different sides are actually achieved through different deposition processes (described in detail in the fabrication method later), the deposition thickness of the two sides can be the same or different. However, since the sides of the first carrier collection layer 02 and the second carrier collection layer 03 located on the same side are achieved through the same deposition process, the deposition thickness of the sides of the first carrier collection layer 02 and the second carrier collection layer 03 located on the same side is the same.

[0042] It should be noted that different deposition processes are required for different sides of the first carrier collection layer 02 and the second carrier collection layer 03. Each deposition process deposits on the main surface and the spacer region of the first carrier collection layer 02 and the second carrier collection layer 03. Therefore, the passivation layer thickness of the main surface and the spacer region of the first carrier collection layer 02 and the second carrier collection layer 03 can be the sum of the passivation layers of the different sides of the first carrier collection layer 02 and the second carrier collection layer 03.

[0043] Regarding the specific structures of the first carrier collection layer 02 and the second carrier collection layer 03, in one optional embodiment, the first carrier collection layer 02 includes a tunneling oxide layer and a first doped layer doped with a first dopant element stacked from the inside out; or, the first carrier collection layer 02 includes an intrinsic polycrystalline silicon layer and a first doped layer doped with a first dopant element stacked from the inside out. The first dopant element can be a p-type dopant element, such as boron. In a further optional embodiment, the second carrier collection layer 03 includes a tunneling oxide layer and a second doped layer doped with a second dopant element stacked from the inside out; wherein the second dopant element has the opposite doping type to the first dopant element; or, the second carrier collection layer 03 includes an intrinsic polycrystalline silicon layer and a second doped layer doped with a second dopant element stacked from the inside out; wherein the second dopant element has the opposite doping type to the first dopant element. For example, the second dopant element can be an n-type dopant element, such as phosphorus. The preparation temperature and conditions for the tunneling oxide layer and the intrinsic polycrystalline silicon layer are different, but this does not affect the current collection performance of the final first carrier collection layer. Therefore, the choice can be made according to the limitations of the actual preparation process. This invention does not make any specific limitations in this regard.

[0044] In summary, the present invention, applied to solar cells, by covering the main surface and side surfaces of the first carrier collection layer, the main surface and side surfaces of the second carrier collection layer, and the interval region with a passivation layer, can effectively improve the passivation capability of the side surfaces of the first and second carrier collection layers, thereby improving the overall passivation performance of the solar cell.

[0045] The second aspect of this utility model provides a method for depositing a solar cell, such as... Figure 3 As shown, it includes:

[0046] Step S301: Place the battery substrate 001 in the deposition chamber of the deposition equipment;

[0047] Step S302: Control the deposition equipment to release deposition gas, and use the deposition equipment to control the circumferential rotation of the battery substrate 001 to deposit a passivation layer 04 of predetermined thickness on the outer side and main surface of the first carrier collection layer 02, the outer side and main surface of the second carrier collection layer 03, and the interval region included in the battery substrate 001.

[0048] Among them, the battery substrate 001 can be understood as Figure 1 and Figure 2 The battery structure before the passivation layer 04 is deposited is that a first carrier collection layer 02, a second carrier collection layer 03 and a substrate with a spacer region are provided on the front side of the silicon substrate 01.

[0049] In existing deposition processes, the deposition equipment itself does not have a rotation function. Therefore, the battery substrate 001 is usually in a stationary state during the deposition process, and the deposition gas, such as... Figure 1 as well as Figure 2 The deposition proceeds downwards in the direction of the arrow, making it impossible to deposit on the sides of the first carrier collection layer 02 and the second carrier collection layer 03. Only a horizontal passivation layer can be formed on the main surface of the first carrier collection layer 02, the second carrier collection layer 03, and the spacer region. Because the thickness of the passivation layer is less than the height of the first carrier collection layer 02 and the second carrier collection layer 03 protruding from the spacer region, the sides of the first carrier collection layer 02 and the second carrier collection layer 03 cannot be completely covered by the passivation layer. However, this embodiment of the invention controls the circumferential rotation of the battery substrate 001, which generates centrifugal force on the deposited gas during rotation. Figure 4 As shown, the deposition gas moves along the direction of centrifugal force. Thus, during the deposition process, circumferential rotation in different directions can be used to deposit on different sides of the first carrier collection layer 02 and the second carrier collection layer 03. Finally, through circumferential rotation in different directions, a longitudinally extending passivation layer 04 is formed, achieving complete deposition on both sides of the first carrier collection layer 02 and the second carrier collection layer 03.

[0050] In an optional embodiment, step S302 may include N first deposition cycles and N second deposition cycles, wherein the first deposition cycle is as follows: Figure 5 As shown, it specifically includes:

[0051] Step S501: Control the deposition equipment to release the first deposition gas, and use the deposition equipment to control the battery substrate 001 to rotate circumferentially along the first direction, so as to form an intermediate deposition layer on the outer side of the main surface and the first side of the first carrier collection layer 02, the outer side of the main surface and the first side of the second carrier collection layer 03, and the outer side of the interval region included in the battery substrate 001.

[0052] Step S502: Stop rotating the battery substrate 001 and control the deposition equipment to release purge gas to purge the surface of the intermediate deposition layer;

[0053] Step S503: Control the deposition equipment to release the second deposition gas, and use the deposition equipment to control the battery substrate 001 to rotate circumferentially along the first direction, so as to deposit a passivation layer 04 with a first thickness on the outer side of the main surface of the first carrier collection layer 02, the outer side of the main surface of the second carrier collection layer 03, and the outer side of the interval region included in the battery substrate 001.

[0054] In step S504, stop rotating the battery substrate 001 and control the deposition equipment to release purge gas to purge the surface of the passivation layer.

[0055] It should be noted that materials currently suitable as passivation layers typically require multi-source preparation (e.g., providing hydrogen and aluminum sources separately). This means that different deposition gases, providing different deposition atoms, must be introduced sequentially and deposited layer by layer to obtain a complete passivation layer. However, since direct contact between deposition gases from different sources can produce unnecessary byproducts, a purging process is necessary after each type of deposition gas is introduced to ensure that only one type of deposition gas remains in the deposition chamber.

[0056] The second sedimentation cycle is as follows Figure 17 As shown, it includes:

[0057] Step S1701: Control the deposition equipment to release the first deposition gas, and use the deposition equipment to control the battery substrate 001 to rotate circumferentially in a second direction opposite to the first direction, so as to form an intermediate deposition layer on the outer side of the main surface and the first side of the first carrier collection layer 02, the outer side of the main surface and the first side of the second carrier collection layer 03, and the outer side of the interval region included in the battery substrate 001.

[0058] Step S1702: Stop rotating the battery substrate 001 and control the deposition equipment to release purge gas to purge the surface of the intermediate deposition layer;

[0059] Step S1703: Control the deposition equipment to release the second deposition gas, and use the deposition equipment to control the battery substrate 001 to rotate circumferentially in the second direction to deposit a passivation layer 04 with a first thickness on the outer side of the main surface and the second side of the first carrier collection layer 02, the outer side of the main surface and the second side of the second carrier collection layer 03, and the outer side of the spacer region included in the battery substrate 001.

[0060] Step S1704: Stop rotating the battery substrate 001 and control the deposition equipment to release purge gas to purge the surface of the passivation layer; wherein the predetermined thickness is N times the first thickness.

[0061] Understandably, the processes of the first and second deposition cycles are essentially the same, differing only in the opposite direction of circumferential rotation. This allows for the deposition of passivation layers on opposite sides of the first carrier collection layer 02 and the second carrier collection layer 03 under the influence of different centripetal forces. The first direction can be clockwise, and the second direction counterclockwise, or vice versa.

[0062] The following uses alumina as an example to illustrate the deposition process of steps S501 to S504. Figure 6 As shown, the process of one deposition cycle in alumina deposition includes:

[0063] Step S601: Control the deposition equipment to release trimethylaluminium (TMA) and control the battery substrate 001 to rotate circumferentially in the first direction using the deposition equipment, wherein the TMA injection rate is 300 sccm (standard cubic centimeters per minute) and the injection time is 10 s;

[0064] Step S602: Stop rotating the battery substrate 001 and control the deposition equipment to release nitrogen gas to purge the surface of the deposited aluminum layer.

[0065] Step S603: Control the deposition equipment to release water vapor and use the deposition equipment to control the battery substrate 001 to rotate circumferentially in the first direction, wherein the water vapor introduction rate is 150 sccm and the introduction time is 10s;

[0066] In step S604, stop rotating the battery substrate 001 and control the deposition equipment to release nitrogen gas to purge the surface of the deposited alumina layer.

[0067] It should be noted that when the passivation layer 04 is aluminum oxide, aluminum and oxygen elements need to be deposited separately to finally obtain aluminum oxide. Therefore, the deposition gases include trimethylaluminum and water vapor, and multiple gas introductions and purgings are required in one deposition cycle to achieve this.

[0068] In an optional embodiment, step S302 includes: performing N consecutive first deposition cycles followed by N consecutive second deposition cycles; and / or, performing the first and second deposition cycles alternately N times. Specifically, the former involves performing one or more first deposition cycles sequentially, first completing the preparation of a passivation layer 04 on one side, and then performing one or more second deposition cycles to complete the preparation of the passivation layer 04 on the other side. The latter involves simultaneously preparing the passivation layers 04 on both sides in one cycle, and then increasing the thickness of the passivation layers 04 on both sides through multiple cycles. N is a positive integer, which can be 3 to 5, such as 3, 4, 5, etc. In actual preparation, the thickness of the passivation layer 04 can be determined according to the actual required thickness. Typically, the deposition thickness of one first deposition cycle or one second deposition cycle is 0.5 nm to 1 nm, such as 0.5 nm, 0.6 nm, 0.7 nm, 0.8 nm, 1 nm, etc.

[0069] Taking alumina deposition as an example, the process of repeating the first and second deposition cycles N times will be explained in detail. Figure 7 As shown, it includes:

[0070] Step S701: Control the deposition equipment to release trimethylaluminium (TMA) and control the battery substrate 001 to rotate circumferentially along the first direction using the deposition equipment, wherein the TMA injection rate is 300 sccm (standard cubic centimeters per minute) and the injection time is 10 s;

[0071] Step S702: Stop rotating the battery substrate 001 and control the deposition equipment to release nitrogen gas to purge the surface of the deposited aluminum layer.

[0072] Step S703: Control the deposition equipment to release water vapor and use the deposition equipment to control the battery substrate 001 to rotate circumferentially in the first direction, wherein the water vapor introduction rate is 150 sccm and the introduction time is 10s;

[0073] Step S704: Stop rotating the battery substrate 001 and control the deposition equipment to release nitrogen gas to purge the surface of the deposited alumina layer.

[0074] Step S705: Control the deposition equipment to release trimethylaluminium (TMA) and use the deposition equipment to control the battery substrate 001 to rotate circumferentially in a second direction opposite to the first direction. The TMA injection rate is 300 sccm (standard cubic centimeters per minute) and the injection time is 10 s.

[0075] Step S706: Stop rotating the battery substrate 001 and control the deposition equipment to release nitrogen gas to purge the surface of the deposited aluminum layer;

[0076] Step S707: Control the deposition equipment to release water vapor and use the deposition equipment to control the battery substrate 001 to rotate circumferentially in the second direction, wherein the water vapor introduction rate is 150 sccm and the introduction time is 10s;

[0077] Step S708: Stop rotating the battery substrate 001 and control the deposition equipment to release nitrogen gas to purge the surface of the deposited alumina layer;

[0078] Step S709: Repeat steps S701-S708 N times.

[0079] In practical applications, the latter type can be preferred. Figure 7 The scheme shown allows for the simultaneous preparation of passivation layers 04 on both sides in a single deposition cycle. This is because performing circumferential rotation in opposite directions during each deposition cycle increases airflow, thereby increasing the uniformity of passivation layer 04 deposition.

[0080] In an optional embodiment, after step 301 and before step 302, the method further includes: evacuating the deposition chamber in the deposition equipment and heating the deposition chamber; controlling the deposition equipment to release cleaning gas to clean the surface of the battery substrate 001. Since the deposition gas is usually a flammable or explosive gas and cannot be deposited directly in air, the deposition chamber of the deposition equipment must be in a vacuum state before releasing the deposition gas. Furthermore, the release of cleaning gas must simultaneously clean the deposition chamber and the surface of the battery substrate 001 to ensure that the environment within the chamber is suitable for the deposition of the passivation layer.

[0081] In one optional embodiment, the deposition chamber is evacuated to 1 mbar to 10 mbar, for example, 1 mbar, 5 mbar, 10 mbar, etc., and heated to 200°C to 300°C, for example, 200°C, 250°C, 300°C, etc.; the cleaning gas can be water vapor; the flow rate of the cleaning gas is 100 sccm to 300 sccm, for example, 100 sccm, 200 sccm, 300 sccm, etc.; in a further optional embodiment, the flow time of the cleaning gas is 50s to 80s, for example, 50s, 60s, 70s, 80s, etc.

[0082] In an optional embodiment, in step S302, the deposition equipment controls the circumferential rotation speed of the battery substrate 001 to be 5 rpm / min to 15 rpm / min, for example, 5 rpm / min, 10 rpm / min, 15 rpm / min, etc. If the rotation speed is too fast or too slow, it will result in insufficient centrifugal force being generated on the deposition gas in one deposition cycle, thereby affecting the deposition effect on the sides of the first carrier collection layer 02 and the second carrier collection layer 03.

[0083] In one optional embodiment, the purge gas is nitrogen; the purge gas flow rate is 20 slm to 25 slm, for example, 20 slm, 21 slm, 22 slm, 23 slm, 25 slm, etc.; the purge gas introduction time is 5 s to 20 s, for example, 5 s, 10 s, 15 s, 20 s, etc.

[0084] In summary, the solar cell deposition method provided by this utility model embodiment controls the circumferential rotation of the cell substrate 001 through the deposition equipment. During the deposition process, the centripetal force generated by the rotation on the deposition gas causes the deposition gas to be displaced and deposited on the sides of the first carrier collection layer 02 and the second carrier collection layer 03. At the same time, it does not affect the deposition of the main surface of the first carrier collection layer 02, the main surface of the second carrier collection layer 03, and the passivation layer 04 in the interval region, thus obtaining the passivation layer 04 covering the sides and outer sides of the main surface of the first carrier collection layer 02, the sides and outer sides of the main surface of the second carrier collection layer 03, and the interval region.

[0085] The deposition method for solar cells provided by this utility model will be specifically described below with reference to embodiments and comparative examples:

[0086] Example

[0087] A. The battery substrate 001 is mounted onto the support part 3 of the deposition equipment, and the battery substrate 001 is moved to the bottom of the deposition part 2 of the deposition chamber by the deposition equipment;

[0088] B. Evacuate the chamber to a pressure of 5 mbar and heat it to 260°C;

[0089] C. Stop the vacuum pump and close the valve to check for air leakage in the chamber;

[0090] D. Water vapor is continuously introduced into the chamber to pre-clean the surface of the battery substrate 001. The water vapor introduction rate is 200 sccm and the introduction time is 60s.

[0091] E. The drive unit 1 of the deposition equipment controls the support unit 3 and the battery substrate 001 to move upward;

[0092] F. The control support 3 drives the battery substrate 001 to rotate clockwise, and releases trimethylaluminum (TMA) gas using the deposition section 2 of the deposition equipment. The TMA injection rate is 300 sccm, the injection time is 10 s, and the circumferential rotation speed of the support 3 is 10 rpm / min.

[0093] G. Stop rotating the support part 3 and the battery substrate 001, release nitrogen gas using the deposition part 2 of the deposition equipment to clean the pipes and chambers, the nitrogen gas flow rate is 22slm and the injection time is 10s;

[0094] H. The drive unit 1 of the deposition equipment controls the support unit 3 to drive the battery substrate 001 to rotate clockwise, and the deposition unit 2 of the deposition equipment releases water vapor (H2O). The water vapor flow rate is 150 sccm, the flow time is 10s, and the circumferential rotation speed of the support unit 3 is 10 rpm / min.

[0095] I. Stop rotating the support part 3 and the battery substrate 001, release nitrogen gas using the deposition part 2 of the deposition equipment, and clean the pipes and chambers. The nitrogen gas flow rate is 22slm and the injection time is 10s.

[0096] J. After performing step FI loop 3 times, adjust the rotation direction in step FI to counterclockwise, and then perform step FI with the changed rotation direction 3 times again.

[0097] K. After deposition is completed, nitrogen gas is released from the deposition section 2 of the deposition equipment to purge and remove excess gas from the chamber;

[0098] L. The drive unit 1 of the deposition equipment controls the support unit 3 and the battery substrate 001 to move downward, and moves the battery substrate 001 out from under the deposition unit 2;

[0099] M. Remove battery substrate 001.

[0100] Comparative Example

[0101] A. Mount the battery substrate 001 into a deposition chamber of the prior art;

[0102] B. Evacuate the chamber to a pressure of 5 mbar and heat it to 260°C;

[0103] C. Stop the vacuum pump and close the valve to check for air leakage in the chamber;

[0104] D. Water vapor is continuously introduced into the chamber to pre-clean the surface of the battery substrate 001. The water vapor introduction rate is 200 sccm and the introduction time is 60s.

[0105] E. Release trimethylaluminum (TMA) gas, wherein the TMA flow rate is 300 sccm, the flow time is 10 s, and the circumferential rotation speed of the support 3 is 10 rpm / min;

[0106] F. Release nitrogen gas to clean the pipes and chambers. The nitrogen gas flow rate is 22 slm and the gas flow time is 10 s.

[0107] G. Release water vapor (H2O), the water vapor flow rate is 150 sccm, the flow time is 10s, and the circumferential rotation speed of the support part 3 is 10 rpm / min;

[0108] H. Release nitrogen gas to clean the pipes and chambers. The nitrogen gas flow rate is 22 slm and the gas flow time is 10 s.

[0109] I. Repeat step 6 of the EH loop operation;

[0110] J. After deposition is completed, nitrogen gas is released from the deposition section 2 of the deposition equipment to purge and remove excess gas from the chamber;

[0111] K. Remove battery substrate 001.

[0112] The battery substrates 001 prepared in the examples and comparative examples were subjected to WCT-120 passivation testing, and the performance test results are shown in the table below:

[0113]

[0114] As shown in Table 1 above, the IVoc (open-circuit voltage) of the embodiment is increased by 1.06 mV compared to the comparative example, indicating that the passivation performance of the battery substrate 001 prepared in the embodiment is better. This further demonstrates that by rotating the battery substrate 001, a passivation layer 04 can be effectively deposited on the sides of the first carrier collection layer 02 and the second carrier collection layer 03. The IFF (intrinsic fill factor) is also significantly improved, indicating that the effective deposition of the passivation layer 04 (alumina) on the sides of the first carrier collection layer 02 and the second carrier collection layer 03 effectively reduces leakage in the spacer region. In addition, the increase in Lifetime (minority carrier lifetime) indicates that the passivation layer 04 on the sides of the first carrier collection layer 02 and the second carrier collection layer 03 helps to reduce the defect states of the silicon substrate, thereby improving the dielectric film layer's ability to extract regional carriers.

[0115] Furthermore, this invention also provides a solar cell deposition apparatus for fabricating any of the aforementioned solar cells or for implementing any of the aforementioned solar cell deposition methods. This is because existing atomic layer deposition (ALD) equipment cannot achieve the deposition method of this invention and therefore cannot fabricate the solar cells of this invention. Specifically, in existing ALD equipment, the battery substrate placement platform is a fixed platform, and the deposition gas is deposited on the battery from top to bottom. Therefore, only a planar passivation layer can be formed on the battery, for example... Figure 1 As shown, the passivation layer 04 has a thickness much smaller than the thickness of the spacer region, preventing the formation of a passivation layer on the side of the carrier collection layer. Therefore, this embodiment of the invention provides a deposition apparatus for a solar cell to simultaneously deposit a longitudinal passivation layer 04 on the side of the first carrier collection layer 02 and the second carrier collection layer 03 included in the cell substrate 001, while improving the uniformity of the deposition.

[0116] Figure 8 A rough structural schematic diagram of the solar cell deposition apparatus provided in an embodiment of the present invention is shown, as follows: Figure 8As shown, the solar cell deposition apparatus provided by this utility model includes: a driving part 1, a deposition part 2, and a support part 3; wherein, the support part 3 is used to place the battery substrate 001; the driving part 1 applies a driving force to the support part 3, adjusts the position of the support part 3 relative to the deposition part 2, and drives the support part 3 to rotate when the support part 3 is below the deposition part 2, so that the support part 3 rotates in its circumferential direction; the deposition part 2 is used to deposit a film layer on the battery substrate 001 placed on the support part 3.

[0117] Specifically, during use, since the deposition section 2 is relatively fixed and cannot be moved, and the gas is deposited from top to bottom during the deposition process, it is necessary to first use the drive section 1 to adjust the position of the support section 3 so that the support section 3 is in a position that is convenient for placing the battery substrate 001. Then, after placing the battery substrate 001 on the support section 3, the drive section 1 is used to adjust the position of the support section 3 so that the support section 3 is below the deposition section 2, and then the deposition process can begin.

[0118] In practical applications, for certain specific deposit gases, due to their flammability and explosiveness, the deposition process needs to be carried out in a closed and vacuum deposition chamber. Therefore, in an optional embodiment, after the support 3 moves below the deposition part 2, the environment where the deposition part 2 and the support 3 are located is sealed, so that the deposition part 2 and the support 3 can realize the deposition process in a vacuum-sealed chamber.

[0119] It should be noted that the problem in the prior art that the passivation layer 04 cannot be deposited on the sides of the first carrier collection layer 02 and the second carrier collection layer 03 included in the battery substrate 001 is mainly because the positions of the deposition part 2 and the support part 3 are fixed, and no gas flow occurs during the deposition process. As a result, the deposition gas can only be deposited from top to bottom on the upper surface of the battery substrate 001 to form a planar passivation film. Therefore, this embodiment of the invention utilizes the driving part 2 to realize the relative rotation between the support part 3 and the deposition part 2. Through the relative rotation of the support part 3, the air in the chamber can be driven to flow, and under the action of centrifugal force, the deposition gas can be deposited on the side. At the same time, this embodiment of the invention can further improve the uniformity of deposition at any position on the support part 3 by controlling the rotation of the support part 3.

[0120] Below, with Figures 9 to 16 The specific structure of the drive unit 1 will be described in detail, wherein, Figure 9 The positional relationship between the lifting structure 11 and the transmission structure 12 included in the drive unit 1 is shown. Figure 10 This diagram shows the specific structure of the lifting assembly 112 in its non-lifted state. Figure 11 This diagram shows the specific structure of the lifting assembly 112 in the raised state. Figure 12The positional relationship between the threaded assembly 1124 and the housing 1123 is shown. Figure 13 This diagram shows the overall structure of the lifting sleeve 1121 in an embodiment of the present invention. Figure 14 The thread structure of the threaded assembly 1124 in an embodiment of this utility model is shown. Figure 15 The specific structure of the connecting component 113 and its positional relationship with the support part 3 are shown. Figure 16 A schematic diagram of the lower surface structure of the support part 3 is shown.

[0121] In one alternative embodiment, such as Figure 9 As shown, the driving unit 1 includes a lifting structure 11 located below the deposition unit 2 and a transmission structure 12. The lifting structure 11 is used to drive the support unit 3 to move vertically, so that the support unit 3 moves closer to or further away from the deposition unit 2 in the vertical direction, and can also drive the support unit 3 to rotate. The transmission structure 12 is used to transport the support unit 3 to or from below the deposition unit 2 in the horizontal direction. In order to realize both the rotation of the support unit 3 and the horizontal movement of the support unit 3, the present invention embodiment provides a lifting structure 11 and a transmission structure 12, so that the position of the support unit 3 is adjusted by the transmission structure 12, and after the battery substrate 001 is placed, it moves horizontally to below the deposition unit 2, and the rotation of the support unit 3 during the deposition process is realized by the lifting structure 11.

[0122] In a further optional embodiment, the lifting structure 11 is as follows: Figure 10 As shown, it specifically includes: a power assembly 111, a lifting assembly 112, and a connecting assembly 113; wherein, the power assembly 111 is disposed at the bottom of the lifting assembly 112; when the power assembly 111 drives the lifting assembly 112 to rotate, a part of the structure in the lifting assembly 112 moves upward relative to the power assembly 111, thereby driving the connecting assembly 113 to move upward, and when the connecting assembly 113 is at its highest point, the part of the structure in the lifting assembly 112 drives the connecting assembly 113 to rotate; the connecting assembly 113 is fixed to the top of the lifting assembly 112 and is used to connect the support part 3.

[0123] from Figure 10As can be seen, the power component 111, the lifting component 112, and the connecting component 113, arranged sequentially from bottom to top, together constitute the lifting structure 11 in this embodiment of the present invention. During the deposition process, the power component 111 at the bottom provides power, driving the lifting component 112 in the middle position to move vertically, so that the connecting component 113 at the top follows the lifting component 112 to move up and down vertically. In an optional embodiment, the power component 111 can be a motor that provides rotational output. That is, the power component 111 itself does not drive the lifting component 112 to rise or fall, but through the internal structure of the lifting component 112, the rotational output provided by the power component 111 is converted into a vertical force, thereby realizing vertical movement.

[0124] It should be noted that when the power component 111 outputs rotation to drive the lifting component 112 to rise and fall, the output end of the power component 111 can directly contact the lifting component 112 to drive the lifting component 112 to rise and fall, or the power component 111 can be a magnetohydrodynamic motor, which does not need to directly contact the lifting component 112, and drives the lifting component 112 to rotate through magnetic force.

[0125] In the case where the power component 111 is a magnetohydrodynamic motor, in a further optional embodiment of this utility model, with Figure 10 and Figure 11 For example, the lifting assembly 112 includes: a lifting sleeve 1121, a buckle 1122 protruding from the outer wall of the lifting sleeve 1121, a threaded assembly 1124 sleeved on the outside of the lifting sleeve 1121, and a housing 1123; wherein, the lifting sleeve 1121 is a hollow cylinder that rotates under the drive of the power assembly 111; at least a portion of the housing 1123 is sleeved on the outside of the threaded assembly 1124, and the housing 1123 is fixedly disposed relative to the support portion 3, and a sliding groove 100 extending in a vertical direction is provided on the inner side of the housing 1123; the threaded assembly 1124 is circular The ring structure has its top fixedly connected to the connecting component 113. A rotating thread 600, engaging with a snap-fit ​​1122, is provided on the inner wall of the ring structure, and a slider 200, matching a sliding groove 100, is provided on the outer wall of the ring structure. During the rotation of the lifting sleeve 1121 driven by the power component 111, the snap-fit ​​1122 moves within the rotating thread 600 on the inner wall of the threaded component 1123. With the cooperation of the slider 200 and the sliding groove 100, the threaded component 1124 moves up and down, driving the connecting component 113 to move up and down. The rotating thread 600 refers to a multi-turn inclined thread structure, and the rotation direction of the thread can be set according to actual conditions; this invention does not specifically limit this.

[0126] It is understandable that, such as Figure 10 and Figure 11 As shown, at least a portion of the housing 1123 is located inside the lifting sleeve 1121, forming a sealed vacuum space for the power assembly 111 (magnetic fluid motor), thereby ensuring the normal operation of the magnetic fluid rotating shaft of the magnetic fluid motor. As an example, the cross-section of the housing 1123 can be at least U-shaped, with both the lifting sleeve 1121 and the threaded assembly 1124 disposed within the groove of the U-shape.

[0127] in, Figure 10 The diagram shown is a schematic representation of the lifting assembly 112 in its non-lifted state. Figure 11 The diagram shown is a schematic representation of the lifting assembly 112 in its raised state. Figure 10 and Figure 11 As can be seen in area A, the relative positional relationship between the latch 1122 on the outer wall of the lifting sleeve 1121 and the threaded assembly 1124 is different when the lifting assembly 112 is in different states. In practical applications, after the power assembly 111 (magnetic fluid motor) is installed in the housing 1123, the magnetic fluid rotor in the magnetic fluid motor starts to rotate and generate magnetism, driving the lifting sleeve 1121 to rotate circumferentially. At this time, the latch 1122 on the outer wall of the lifting sleeve 1121 begins to move along the rotating thread 600 on the inner wall of the threaded assembly 1124. It should be noted that since the contact between the latch 1122 and the threaded assembly 1124 is not a resistance-free contact, the threaded assembly 1124 may rotate in the same direction as the latch 1122 rotates, failing to achieve the purpose of vertical movement. Therefore, in this embodiment of the invention, a vertically extending groove 100 is provided on the inner side of the fixed housing 1123, and a slider 200 matching the groove 100 is provided on the outer wall of the threaded assembly 1124. Figure 12 As shown. Among them, Figure 12 The diagram shows the positional relationship between the threaded assembly 1124 and the housing 1123 from a top-down view. Area B shows the positional relationship between the slide groove 100 and the slider 200. It is understandable that, due to the restriction of the slide groove 100, the slider 200 can only move vertically. Therefore, the threaded assembly 1124 cannot move circumferentially. This means that when the lifting sleeve 1121 rotates circumferentially, the latch 1122 will inevitably move within the rotating thread 600, thus creating a relative displacement between the lifting sleeve 1121 and the threaded assembly 1124. (Comparison) Figure 10 and Figure 11 It can be seen that, Figure 10 In the middle, the buckle 1122 on the outer wall of the lifting sleeve 1121 is located at the uppermost end of the rotating thread 600 in the thread assembly 1124. As the lifting sleeve 1121 rotates continuously, the buckle 1122 will move continuously in the rotating thread 600, so that the thread assembly 1124 will rise continuously, and move to the highest point when the buckle 1122 is located at the lowermost end of the rotating thread 600.

[0128] Figure 13 The diagram shows the overall structure of the lifting sleeve 1121 in an embodiment of the present invention. In an optional embodiment, the cross-section of the buckle 1122 can be at least one of a triangle, rectangle, square, circle, and arc. The cross-section of the rotating thread 600 matches the cross-section of the buckle to ensure that the buckle 1122 can move along the rotating thread 600.

[0129] In addition, from Figure 13 It can be seen that a base 500 is provided at the lower end of the hollow cylinder of the lifting sleeve 1121. When the threaded assembly 1124 moves downward, as the lower surface of the threaded assembly 1124 abuts against the base 500 of the lifting sleeve 1121, the threaded assembly 1124 cannot continue to move downward, thus returning to the state when the threaded assembly 1124 is not raised. Similarly, it is also necessary to ensure that the threaded assembly 1124 does not come off from the top of the lifting sleeve 1121. That is, if the rotating thread 600 is set through the thickness direction of the threaded assembly 1124, during the continuous upward movement of the threaded assembly 1124, there is a possibility that the latch 1122 will disengage from the rotating thread 600 of the threaded assembly 1124, causing the lifting sleeve 1121 to be unable to control the descent of the threaded assembly 1124. Therefore, with Figure 14 For example, the thread structure in the thread assembly 1124 is illustrated. In an optional embodiment of this utility model, a flat thread 700 connected to the lowermost end of the rotating thread 600 is also provided on the inner wall of the annular structure; a horizontal slide groove communicating with the top of the slide groove 100 is also provided on the inner side of the outer shell 1123; wherein, the horizontal slide groove is arranged circumferentially; after the buckle 1122 moves from the rotating thread 600 to the flat thread 700, the slider 200 and the horizontal slide groove are located on the same horizontal line, the lifting sleeve 1121 and the thread assembly 1124 form a rotatable connection, and the thread assembly 1124 and the outer shell 1123 form a rotatable connection, indicating that they can rotate relative to each other. When the thread assembly 1124 rotates under the action of external force, it can rotate horizontally circumferentially relative to the lifting sleeve 1121 and the outer shell 1123, the buckle 1122 can move within the flat thread 700, and the slider 200 can move within the horizontal slide groove. Among them, the flat thread 700 refers to a horizontally arranged thread structure. Because the horizontal groove is located inside the outer casing 1123 and is circumferentially arranged, therefore... Figure 12 The top view is not labeled. From Figure 14It can be seen that the flat thread 700 is actually the bottommost thread in the thread assembly 1124. When the thread assembly 1124 has a total of n threads, the rotating thread 600 is the n-1th thread from top to bottom, and the flat thread 700 is the nth thread (i.e., the bottommost thread). By combining the rotating thread 600 and the flat thread 700, it can be ensured that the thread assembly 1124 will not separate from the latch 1122 in the lifting sleeve 1121 during the upward movement. Furthermore, when the latch 1122 is located at the flat thread 700, the slider 200 and the horizontal slide groove are on the same horizontal line, that is, the slider 200 can move circumferentially horizontally in the horizontal slide groove, allowing the thread assembly 1124 to rotate circumferentially in the horizontal direction.

[0130] It should be noted that when the latch 1122 is located at the flat thread 700, simply using the power component 111 to drive the lifting sleeve 1121 to rotate is insufficient to continue controlling the rotation of the thread assembly 1124. Therefore, in a further optional embodiment, such as... Figure 3 and Figure 4 As shown, the lifting assembly 112 also includes an electromagnetic component 1125. When the lifting sleeve 1121 and the threaded assembly 1124 are rotatably connected, and the threaded assembly 1124 and the outer casing 1123 are rotatably connected, the electromagnetic force generated by the electromagnetic component 1125 provides an external force to the threaded assembly 1124, causing the threaded assembly 1124 to rotate horizontally relative to the lifting sleeve 1121 under the action of the external force. Specifically, only the threaded assembly 1124 can be made of magnetic material. In this way, after the electromagnetic component 1125 is activated, it will only generate a circumferential electromagnetic force on the threaded assembly 1124, while not generating an electromagnetic force on other structures in the lifting assembly 112.

[0131] As can be seen, through the structure of the lifting component 112, the connecting component 113 can be driven to move vertically, and after the lifting component 112 rises to a specific position, the connecting component 113 can be controlled to rotate circumferentially. However, the ultimate goal of this utility model embodiment is to control the support part 3 to rotate, so it is also necessary to make a fixed connection between the connecting component 113 and the support part 3, so that the support part 3 can be driven to rotate. Therefore, in an optional embodiment, the connecting component 113 includes: a main body 1131, a connecting shaft 1132 disposed on the main body 1131 near the support part 3; a connecting through hole 31 corresponding to the connecting shaft 1132 is provided on the lower surface of the support part 3; the lower part of the connecting component 113 is fixedly connected to the top of the threaded component 1124, and when the lifting component 112 moves upward to the highest point, the connecting shaft 1132 is inserted into the connecting through hole 31.

[0132] For example, Figure 15 The specific structure of the connecting component 113 and its positional relationship with the support part 3 are shown. Figure 16A schematic diagram of the lower surface structure of the support portion 3 is shown. From Figure 15 and Figure 16 As can be seen, multiple protruding connecting shafts 1132 are provided on the upper surface of the main body 1131 in the connecting component 113, and multiple connecting through holes 31 corresponding to the connecting shafts 1132 are provided on the lower surface of the support part 3. In this way, after the connecting component 113 rises to a specific position with the lifting component 112, the connecting shafts 1132 can be inserted into the connecting through holes 31, thereby realizing the fixed connection between the connecting component 113 and the support part 3.

[0133] In a further optional embodiment, the connecting shaft 1132 includes: a main shaft 300 located at the axis of the main body 1131 and at least one auxiliary shaft 400 arranged around the main shaft 300; there are multiple connecting through holes 31, corresponding to the main shaft 300 and the auxiliary shaft 400 respectively. It is understood that a single main shaft 300 is insufficient to achieve a fixed connection between the connecting component 113 and the support part 3; at least two positions need to be inserted into the connecting through holes 31 to achieve a fixed connection between the connecting component 113 and the support part 3. However, if only one main shaft 300 and one auxiliary shaft 400 are provided, the centrifugal force in one direction will be too large when the support part 3 moves circumferentially with the connecting component 113, posing a safety hazard of the auxiliary shaft 400 breaking. Therefore, in a further preferred embodiment of this utility model, multiple auxiliary shafts 400 are provided, and the multiple auxiliary shafts 400 are symmetrically arranged along the main shaft 300. Setting multiple auxiliary shafts 400 serves two purposes: firstly, it ensures that the torque between the connecting assembly 113 and the support 3 is not excessive during startup, preventing the connecting shaft 1132 on the connecting assembly 113 from breaking; secondly, it ensures that the support 3 does not generate centrifugal force in one direction during the circumferential movement of the connecting assembly 113, thus guaranteeing a stable connection between the support 3 and the connecting assembly 113. For example, six auxiliary shafts can be set, with an included angle of 60° between any two adjacent auxiliary shafts.

[0134] Below, with Figure 9 The specific structure of the transmission structure 12 will be described using an example. In one optional embodiment, such as... Figure 9 As shown, the transmission structure 12 includes: a horizontally arranged transmission frame 121 and a conveyor belt 122; wherein, the conveyor belt 122 is disposed on at least one pair of opposite sides of the transmission frame 121, for conveying the support part 3 to or from below the deposition part 2; wherein, the deposition part 2 is fixedly connected to the transmission frame 121. Specifically, Figure 9The arrows in the diagram can indicate one direction of movement for the conveyor belt 122. Specifically, after the support 3 is placed on the conveyor belt 122 from end A, it moves with the conveyor belt 122 to directly below the deposition section 2 for film deposition. After deposition is complete, it continues to move with the conveyor belt 122 from below the deposition section 2 until it reaches end B. It can be understood that the movement between the support 3 and the conveyor belt 122 can be achieved solely through the friction caused by the weight of the support 3 itself, or multiple engagement points can be provided on the conveyor belt 122 to utilize the contact between these engagement points and the support 3 to achieve the effect of moving the support 3. Figure 9 The direction of movement is only one possibility. Alternatively, the support part 3 can be moved from end A to below the deposition part 2 to complete the deposition, and then moved back to end A. This utility model does not limit the specific direction of movement.

[0135] It should be noted that the lifting structure 11 and transmission structure 12 in the drive unit 1 of this embodiment need to be used in combination. First, the conveyor belt 122 in the transmission structure 12 transports the support unit 3 to below the deposition unit 2. Then, the lifting sleeve 1121, buckle 1122, outer shell 1123, and threaded assembly 1124 in the lifting structure 11 work together to lift the support unit 3 from its initial position, thus separating it from the conveyor belt 122 in the transmission structure 12. This avoids the support unit 3 being affected by the friction of the conveyor belt 122 during rotation. When the lifting structure 11 reaches its highest position, the electromagnetic component 1125 controls the horizontal circumferential rotation of the support unit 3. Once the support unit 3 reaches a stable rotational speed, the deposition unit 2 is controlled to begin the deposition process until it ends. After deposition is completed, the electromagnetic component 1125 is turned off to stop the circumferential rotation of the support part 3. Then, the lifting sleeve 1121, buckle 1122, housing 1123 and threaded assembly 1124 in the lifting structure 11 work together to move the support part 3 downward until it returns to the starting position (i.e., it is placed back on the conveyor belt 122). Finally, the conveyor belt 122 in the transmission structure 12 is used to move the support part 3 out from under the deposition part 2.

[0136] In one optional embodiment, both the support portion 3 and the deposition portion 2 provided by this invention have circular outlines, and the diameter of the deposition portion 2 is not less than the diameter of the support portion 3. Because a circular structure is centrally symmetrical for circumferential motion, the centrifugal forces generated at two symmetrical points are equal in magnitude but opposite in direction, thus providing relative stability during circumferential motion. Compared to other structures, this better ensures the stability of circumferential motion. Furthermore, when both the support portion 3 and the deposition portion 2 are circular structures, it ensures that each position in the support portion 3 remains below the deposition portion 2 during circumferential motion, preventing it from shifting below the deposition portion 2, thereby ensuring the uniformity of deposition.

[0137] In summary, the deposition apparatus of the solar cell deposition method provided in this embodiment of the present invention, by setting a driving part and a supporting part, can apply a driving force to the supporting part using the driving part, so that the supporting part on which the battery substrate 001 is placed can rotate in its circumferential direction. This not only forms a horizontal planar passivation layer on the main surface of the first carrier collection layer and the second carrier collection layer and the main surface of the isolation region, but also forms a longitudinal passivation layer on the side of the first carrier collection layer and the second carrier collection layer using centrifugal force, thereby improving the overall passivation effect.

[0138] The above steps are provided only to help understand the structure, method, and core idea of ​​this utility model. For those skilled in the art, various improvements and modifications can be made to this utility model without departing from its principles, and these improvements and modifications also fall within the scope of protection of the claims of this utility model.

Claims

1. A solar cell, characterized in that, include: Silicon substrate (01) A first carrier collection layer (02) is provided in a first region of the first main surface of the silicon substrate (01). A second carrier collection layer (03) is provided in a second region of the first main surface of the silicon substrate (01). And passivation layer (04); The first region and the second region are arranged alternately and are separated by an interval region; the first carrier collection layer (02) and the second carrier collection layer (03) have opposite conductivity types; The passivation layer (04) covers the main surface and side surface of the first carrier collection layer (02), the main surface and side surface of the second carrier collection layer (03), and the interval region.

2. The solar cell according to claim 1, characterized in that, The thickness of the passivation layer (04) corresponding to the main surface of the first carrier collection layer (02) and / or the main surface of the second carrier collection layer (03) and / or the interval region is 3nm~7nm; And / or, The thickness of the passivation layer (04) corresponding to the side of the first carrier collection layer (02) is 3nm~7nm; And / or, The thickness of the portion of the passivation layer (04) corresponding to the side of the second carrier collection layer (03) is 3nm~7nm.

3. The solar cell according to claim 1, characterized in that, The first carrier collection layer (02) includes a tunneling oxide layer and a first doped layer doped with a first doping element stacked from the inside to the outside; or, The first carrier collection layer (02) includes an intrinsic polysilicon layer and a first doped layer doped with a first doping element stacked from the inside to the outside; The second carrier collection layer (03) includes a tunneling oxide layer and a second doped layer doped with a second doping element stacked from the inside to the outside; wherein the second doping element has the opposite doping type to the first doping element. or, The second carrier collection layer (03) includes an intrinsic polysilicon layer stacked from the inside out and a second doped layer doped with the second doping element.

4. A deposition apparatus for solar cells, used to fabricate any one of claims 1 to 3, characterized in that, include: The structure comprises a driving section (1), a deposition section (2), and a support section (3); wherein, The support (3) is used to place the battery substrate (001); The driving part (1) applies a driving force to the support part (3), adjusts the position of the support part (3) relative to the deposition part (2), and drives the support part (3) to rotate when the support part (3) is below the deposition part (2), so that the support part (3) rotates in its circumferential direction; The deposition section (2) is used to deposit a passivation layer on the battery substrate (001) placed on the support section (3).

5. The deposition apparatus according to claim 4, characterized in that, The drive unit (1) includes: a lifting structure (11) located below the deposition unit (2) and a transmission structure (12), wherein, The lifting structure (11) is used to drive the support (3) to move in the vertical direction, so that the support (3) moves closer to or further away from the deposition part (2) in the vertical direction and drives the support (3) to rotate. The transmission structure (12) is used to transport the support (3) to or from the deposition part (2) in the horizontal direction.

6. The deposition apparatus according to claim 5, characterized in that, The lifting structure (11) includes: a power component (111), a lifting component (112), and a connecting component (113); wherein, The power assembly (111) is located at the bottom of the lifting assembly (112); when the power assembly (111) drives the lifting assembly (112) to rotate, a portion of the structure in the lifting assembly (112) moves upward relative to the power assembly (111) to drive the connecting assembly (113) to move upward, and when the connecting assembly (113) is at its highest point, the portion of the structure in the lifting assembly (112) drives the connecting assembly (113) to rotate; The connecting component (113) is fixed to the top of the lifting component (112) and is used to connect the support part (3).

7. The deposition apparatus according to claim 6, characterized in that, The lifting assembly (112) includes: a lifting sleeve (1121), a buckle (1122) protruding from the outer wall of the lifting sleeve (1121), a threaded assembly (1124) sleeved on the outside of the lifting sleeve (1121), and a housing (1123); wherein, The lifting sleeve (1121) is a hollow cylinder that rotates under the drive of the power assembly (111); At least a portion of the outer shell (1123) is sleeved on the outside of the threaded assembly (1124), and the outer shell (1123) is fixedly disposed relative to the support portion (3). A groove (100) extending in the vertical direction is provided on the inner side of the outer shell (1123). The threaded assembly (1124) is a ring structure. The top of the ring structure is fixed to the connecting assembly (113). A rotating thread (600) that engages with the buckle (1122) is provided on the inner wall of the ring structure. A slider (200) that matches the groove (100) is provided on the outer wall of the ring structure. During the rotation of the lifting sleeve (1121) with the power assembly (111), the buckle (1122) moves in the rotating thread (600) on the inner wall of the thread assembly (1124). With the cooperation of the slider (200) and the groove (100), the thread assembly (1124) moves up and down, and the thread assembly (1124) drives the connecting assembly (113) to move up and down.

8. The deposition apparatus according to claim 7, characterized in that, A flat thread (700) connected to the lowest end of the rotary thread (600) is also provided on the inner wall of the annular structure. A horizontal slide groove communicating with the top of the slide groove (100) is also provided on the inner side of the outer casing (1123); wherein the horizontal slide groove is arranged circumferentially. When the buckle (1122) moves from the rotating thread (600) to the flat thread (700) and the connecting assembly (113) is at its highest point, the slider (200) and the horizontal slide are on the same horizontal line. The lifting sleeve (1121) and the threaded assembly (1124) form a rotatable connection. The threaded assembly (1124) and the outer shell (1123) form a rotatable connection. Under the action of external force, the threaded assembly (1124) rotates horizontally in the circumferential direction relative to the lifting sleeve (1121) and the outer shell (1123).

9. The deposition apparatus according to claim 8, characterized in that, The connecting component (113) includes: a main body (1131) and a connecting shaft (1132) disposed on the main body (1131) near the support (3). A connecting through hole (31) corresponding to the connecting shaft (1132) is provided on the lower surface of the support part (3). When the connecting component (113) moves upward to the highest point along with the lifting component (112), the connecting shaft (1132) is inserted into the connecting through hole (31).

10. The deposition apparatus according to claim 9, characterized in that, The connecting shaft (1132) includes: a main shaft (300) located at the center of the main body (1131) and at least one auxiliary shaft (400) arranged around the main shaft (300). There are multiple connecting through holes (31), which correspond to the main shaft (300) and the auxiliary shaft (400) respectively.

11. The deposition apparatus according to claim 7 or 10, characterized in that, The lifting assembly (112) also includes an electromagnetic component (1125). When the lifting sleeve (1121) and the threaded assembly (1124) are rotatably connected, and the threaded assembly (1124) and the outer shell (1123) are rotatably connected, the electromagnetic force generated by the electromagnetic component (1125) provides an external force to the threaded assembly (1124), so that the threaded assembly (1124) rotates horizontally relative to the lifting sleeve (1121) and the outer shell (1123) under the action of the external force.

12. The deposition apparatus according to claim 5 or 10, characterized in that, The transmission structure (12) includes a horizontally arranged transmission frame (121) and a conveyor belt (122); wherein, The conveyor belt (122) is disposed on at least one set of opposite sides of the transmission frame (121) for conveying the support (3) to or from below the deposition part (2); The deposition section (2) is fixedly connected to the transmission frame (121).

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