A detection device and a battery production system

Abstract

The application relates to the technical field of battery production equipment, in particular to a detection equipment and a battery production system. The detection equipment is used for detecting dust on a silicon wafer and comprises a bearing table used for bearing the silicon wafer, a wiping assembly used for wiping a wiped area of the silicon wafer, the wiped area being located on a first surface of the silicon wafer and being smaller than the area of the first surface of the silicon wafer, and a shooting assembly used for shooting the first surface of the silicon wafer. The detection equipment provided in the application can wipe the first surface of the silicon wafer, so that the area of the silicon wafer surface with dust after wiping and the area without wiping form a color difference, thereby identifying whether the surface of the silicon wafer has dust, improving the detection efficiency of detecting the dust on the surface of the silicon wafer, guaranteeing the cleanliness of the silicon wafer, guaranteeing that the silicon wafer with dust does not contaminate other silicon wafers, and improving the yield of silicon wafer production.

Description

Technical Field

[0001] This application relates to the field of battery production equipment technology, and in particular to a testing device and a battery production system. Background Technology

[0002] During the production of photovoltaic cells, especially in the polycrystalline silicon deposition stage, silicon wafers are often contaminated with dust. This dust contamination not only affects the quality of the silicon wafers, but also leaves roller marks when the wafers pass through the rollers in the subsequent RCA cleaning process, severely impacting wafer quality and yield. Currently, commonly used inspection equipment such as film thickness gauges, fragmentation detectors, and conventional automated optical inspection equipment cannot effectively detect these dust-induced defects.

[0003] In the existing technology, the detection of dust on the surface of silicon wafers mainly relies on manual visual inspection during the RCA cleaning process. The method of manually detecting dust on the surface of silicon wafers is not only inefficient and consumes a lot of manpower and time, but also prone to missing problematic silicon wafers due to human factors, thereby affecting the production quality and yield of photovoltaic cells. Utility Model Content

[0004] This application discloses a testing device and a battery production system that can irradiate silicon wafers with infrared light, making the colors of clean silicon wafers and dusty silicon wafers different when photographed, thereby identifying dusty silicon wafers. This improves the detection efficiency of dust on the surface of silicon wafers, ensures the cleanliness of silicon wafers, and also ensures that dusty silicon wafers will not contaminate other silicon wafers, thus improving the yield of silicon wafer production.

[0005] To achieve the above objectives, embodiments of this application disclose a detection device and a battery production system for detecting dust on silicon wafers, including:

[0006] A support platform for supporting the silicon wafer;

[0007] A wiping assembly for wiping a wiping area of ​​the silicon wafer, the wiping area being located on a first surface of the silicon wafer, the wiping area being smaller than the area of ​​the first surface of the silicon wafer;

[0008] A camera, used to photograph the first side of the silicon wafer.

[0009] As an optional implementation, the detection device further includes a detection unit electrically connected to the imaging device, the detection unit being used to analyze whether there is a color difference between the wiped area of ​​the first surface and the area outside the wiped area in the image captured by the imaging device.

[0010] As an optional implementation, the wiping assembly includes a wiping element and a driving element. The driving element can drive the wiping element to move towards or away from the silicon wafer, and the driving element can drive the wiping element to move along a direction parallel to the bearing surface of the support platform to wipe the area to be wiped.

[0011] As an optional implementation, the wiping element is made of a flexible material and has an adhesive surface.

[0012] As an optional implementation, the driving component is a robotic arm capable of gripping the wiping component and the silicon wafer.

[0013] As an optional implementation, the support platform includes an adsorption port disposed on the surface of the support platform for supporting the silicon wafer, and the adsorption port is used to connect to a negative pressure generating element to adsorb the silicon wafer.

[0014] As an optional implementation, the detection device further includes an irradiation element for providing irradiation light to the silicon wafer.

[0015] As an optional implementation, the length d1 of the irradiation element satisfies 55mm≤d1≤59mm, the width d2 of the irradiation element satisfies 16mm≤d2≤20mm, the angle α between the irradiation direction of the irradiation light and the silicon wafer satisfies 14.8°≤a≤15.2°, and the angle b between the shooting path of the imaging element and the plane where the silicon wafer is located satisfies 19.8°≤b≤20.2°.

[0016] As an optional implementation, the wiping element is cylindrical, the diameter d3 of the wiping element satisfies 5mm≤d3≤9mm, and the length d4 of the wiping element satisfies 268mm≤d4≤272mm.

[0017] A second aspect of this application provides a battery production system, including the aforementioned testing equipment.

[0018] Compared with the prior art, the beneficial effects of this application are:

[0019] The detection device provided in this application embodiment can wipe the wiped area on the surface of a silicon wafer using a wiping component, and then capture an image of the wiped side of the silicon wafer using an imaging component. If there is dust on the surface of the silicon wafer, there will be a color difference between the wiped area and the unwiped area. If there is no dust on the surface of the silicon wafer, the wiped area and the unwiped area will have the same color. This allows the device to determine whether there is dust on the surface of the silicon wafer, thereby accurately identifying silicon wafers with dust on their surface. This improves the detection efficiency of dust on the surface of silicon wafers, ensures the cleanliness of the silicon wafers, and also ensures that silicon wafers with dust will not contaminate other silicon wafers, thus improving the yield of silicon wafer production. Attached Figure Description

[0020] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0021] Figure 1 This is a schematic diagram of the structure of the testing equipment provided in the embodiments of this application;

[0022] Figure 2 This is a schematic diagram of the wiping assembly provided in an embodiment of this application;

[0023] Figure 3 This is a schematic diagram of the structure of the support platform provided in the embodiments of this application;

[0024] Figure 4 This is a schematic diagram of the structure of the irradiation element provided in the embodiment of this application.

[0025] Explanation of reference numerals in the attached figures:

[0026] 100-Detection equipment; 200-Silicon wafer; 1-Supporting platform; 11-Adsorption port; 2-Wiping assembly; 21-Wiping component; 22-Driver; 3-Picking component; 4-Irradiation component; 5-Conveyor belt. Detailed Implementation

[0027] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0028] In this application, the terms "upper," "lower," "top," "bottom," "inner," "vertical," and "horizontal," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. These terms are primarily for the purpose of better describing this application and its embodiments, and are not intended to limit the indicated device, element, or component to having a specific orientation, or to be constructed and operated in a specific orientation.

[0029] Furthermore, in addition to indicating location or positional relationship, some of the aforementioned terms may also have other meanings. For example, the term "above" may also be used in some cases to indicate a certain dependency or connection relationship. Those skilled in the art can understand the specific meaning of these terms in this application based on the specific circumstances.

[0030] Furthermore, the terms "set up," "equipped with," and "connected" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral structure; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium, or an internal connection between two devices, components, or parts. Those skilled in the art can understand the specific meaning of these terms in this application based on the specific circumstances.

[0031] Furthermore, the terms "first," "second," etc., are primarily used to distinguish different devices, elements, or components (which may be the same or different in specific type and construction), and are not intended to indicate or imply the relative importance or quantity of the indicated devices, elements, or components. Unless otherwise stated, "a plurality of" means two or more.

[0032] In the current battery manufacturing industry, the production process of passivated contact batteries includes textured surface preparation, doping and diffusion, alkaline polishing, polycrystalline silicon deposition, heat treatment annealing, RCA cleaning, atomic layer deposition, front coating, back coating, screen printing, laser sintering, and performance testing. The passivated contact battery production process includes textured surface preparation to increase the battery surface area, followed by doping and diffusion to form a PN junction, alkaline polishing to remove impurities and damaged layers, polycrystalline silicon deposition to enhance conductivity, heat treatment annealing to stabilize the structure, RCA cleaning to remove residues, atomic layer deposition to form a passivation layer, front and back coatings to improve efficiency and provide protection, screen printing to fabricate electrodes, laser sintering to solidify the electrodes, and finally performance testing to ensure battery quality.

[0033] The polycrystalline silicon deposition stage is typically performed at high temperatures to form a thin polycrystalline silicon film on the silicon wafer surface. During this stage, due to the high temperature and chemical reactions, the silicon wafer surface may react with gases or residues in the surrounding environment, generating dust such as hydrides. Simultaneously, since the raw materials and equipment used in the polycrystalline silicon deposition process may also contain trace amounts of silica, a small amount of silica dust may also be generated during deposition. If this dust is not effectively removed, it will adhere to the silicon wafer surface, causing contamination. Furthermore, in the subsequent RCA cleaning process, when the silicon wafer passes through the rollers, roller marks are formed. Dust contamination of the rollers can then contaminate the water tank, contaminating even dust-free silicon wafers and causing large-scale defects in the silicon wafers.

[0034] Because dust particles are typically small and uniformly distributed, commonly used inspection equipment such as film thickness gauges, fragmentation detectors, and conventional automated optical inspection equipment cannot effectively detect silicon wafer defects caused by dust. Currently, the detection of dust on the silicon wafer surface mainly relies on manual visual inspection during the RCA cleaning process. This method of manually inspecting dust on the silicon wafer surface is not only inefficient and time-consuming, but also prone to overlooking problematic silicon wafers due to human error, thus affecting the production quality and yield of photovoltaic cells.

[0035] Based on this, this application discloses a testing device and a battery production system. The testing device can wipe the first side of a silicon wafer, so that the area of ​​the silicon wafer surface with dust after wiping and the area without wiping form a color difference, thereby identifying whether there is dust on the surface of the silicon wafer, improving the detection efficiency of dust on the surface of the silicon wafer, ensuring the cleanliness of the silicon wafer, and also ensuring that the silicon wafer with dust will not contaminate other silicon wafers, thereby improving the yield of silicon wafer production.

[0036] The technical solution of this application will be further described below with reference to the embodiments and accompanying drawings.

[0037] Please see Figure 1 , Figure 1 This is a schematic diagram of the structure of the testing device 100 provided in an embodiment of this application. This application discloses a testing device 100 and a battery production system for detecting dust on a silicon wafer 200, comprising: a support platform 1 for supporting the silicon wafer 200; a wiping assembly 2 for wiping the wiping area of ​​the silicon wafer 200, the wiping area being located on the first surface of the silicon wafer 200, and the wiping area being smaller than the area of ​​the first surface of the silicon wafer 200; and an imaging component 3 for photographing the first surface of the silicon wafer 200.

[0038] The support stage 1 is used to support the silicon wafer 200 to be tested, so as to ensure that the silicon wafer 200 remains stable during wiping and testing, and to prevent the silicon wafer 200 from shaking or falling off and affecting the test results. Specifically, the support stage 1 can have a smooth and flat support surface to reduce friction and dust generation between the silicon wafer 200 and the support stage 1.

[0039] Optionally, the support platform 1 may be equipped with positioning components, such as limiting blocks, clamping components, and adsorption components, to ensure that the silicon wafer 200 is placed in the same posture each time, to prevent errors in the detection results caused by the tilting of the silicon wafer 200, and to ensure the accuracy and efficiency of the detection.

[0040] It should be noted that during the polysilicon deposition stage of silicon wafer 200 production, due to the high temperature and chemical reactions, the surface of silicon wafer 200 may react with gases or residues in the surrounding environment, generating dust such as hydrides. Simultaneously, since the raw materials and equipment used in the polysilicon deposition process may also contain trace amounts of silica, a small amount of silica dust may also be generated during the deposition process. In other words, the dust on the surface of silicon wafer 200 consists of hydrides and a small amount of silica.

[0041] The testing equipment 100 also includes a wiping component 2, which is used to wipe the wiped area on the first surface of the silicon wafer 200 to remove dust from the wiped area. The wiped area of ​​the silicon wafer 200 is smaller than the area of ​​the first surface of the silicon wafer 200.

[0042] It is understandable that if dust is present on the surface of silicon wafer 200, there will be a color difference between the wiped area and the area before wiping. This is because the wiping component 2 can remove dust particles from the surface of silicon wafer 200. Dust particles tend to scatter and absorb light, causing the area before wiping to appear darker or more speckled. After wiping, as the dust is removed, the light transmittance of the area increases, making the surface appear brighter and more uniform, thus creating a color difference.

[0043] Furthermore, if there is dust on the surface of the silicon wafer 200, there will be a color difference between the area after wiping and the area before wiping. If there is no dust on the surface of the silicon wafer 200, there will be no color difference between the area after wiping and the area before wiping. This allows for a clearer identification of whether there is dust on the surface of the silicon wafer 200 after wiping. In addition, the area of ​​the silicon wafer 200 that is wiped is smaller than the area of ​​the first surface of the silicon wafer 200, so that there will be a color difference on the same surface of the silicon wafer 200 after wiping, which further helps to identify the dust situation on the surface of the silicon wafer 200.

[0044] The inspection device 100 also includes an image capture unit 3, which is used to capture images of the first side of the silicon wafer 200 after it has been wiped. The image capture unit 3 can capture images of the surface of the silicon wafer 200, including reflected or scattered light from dust particles. Specifically, the image capture unit 3 can capture image information of the surface of the silicon wafer 200 using a high-precision camera or image sensor. This image information includes the color, brightness, and minute defects of the silicon wafer 200, thereby allowing analysis and determination of the presence of dust on the surface of the silicon wafer 200 through the images captured by the image capture unit 3.

[0045] Optionally, the camera 3 can be a device such as a high-resolution camera, machine vision camera, or industrial camera that can capture images of the surface of the silicon wafer 200 to identify whether there is a color difference on the surface of the silicon wafer 200 after wiping, thereby identifying whether there is dust on the surface of the silicon wafer 200.

[0046] Thus, the detection device 100 provided in this application embodiment can wipe the wiped area on the surface of the silicon wafer 200 using the wiping component 2, and then capture an image of the wiped side of the silicon wafer 200 using the imaging component 3. If there is dust on the surface of the silicon wafer 200, there will be a color difference between the wiped area and the unwiped area of ​​the silicon wafer 200. If there is no dust on the surface of the silicon wafer 200, the colors of the wiped area and the unwiped area of ​​the silicon wafer 200 will be consistent. This allows the device to determine whether there is dust on the surface of the silicon wafer 200, thereby accurately identifying silicon wafers 200 with dust on their surfaces. This improves the detection efficiency of dust on the surface of the silicon wafer 200, ensures the cleanliness of the silicon wafer 200, and also ensures that silicon wafers 200 with dust will not contaminate other silicon wafers 200, thus improving the yield of silicon wafer 200 production.

[0047] In some embodiments, the detection device 100 further includes a detection unit electrically connected to the imaging device, the detection unit being used to analyze whether there is a color difference between the wiped area and the area outside the wiped area on the first side of the image captured by the imaging device.

[0048] The detection unit can receive image data from the captured object. The detection unit uses image processing algorithms to analyze the image, paying particular attention to the color difference between the wiped and unwiped areas on the first surface of the silicon wafer 200. By comparing the color information of the wiped and unwiped areas, the detection unit can identify whether there is a significant color difference. The presence of a color difference may indicate that dust has been removed from the wiped area, meaning that dust is present on the surface of the silicon wafer 200.

[0049] Furthermore, the detection unit preprocesses and analyzes the image using a built-in image processing algorithm to identify dust on the surface of the silicon wafer 200. The image processing algorithm may include steps such as filtering, edge detection, and morphological processing to improve the accuracy and reliability of the identification.

[0050] Optionally, the detection unit can output the analysis results in a visual manner or in the form of digital signals, thereby facilitating the removal of silicon wafers 200 with dust on their surfaces, preventing the silicon wafers 200 with dust on their surfaces from contaminating the processing equipment, and thus preventing the contaminated processing equipment from contaminating other clean silicon wafers 200.

[0051] Please see Figure 2 , Figure 2 This is a schematic diagram of the structure of the wiping assembly 2 provided in an embodiment of this application. In some embodiments, the wiping assembly 2 includes a wiping member 21 and a driving member 22. The driving member 22 can drive the wiping member 21 to move towards or away from the silicon wafer 200, and the driving member 22 can drive the wiping member 21 to move along a direction parallel to the bearing surface of the support platform 1 to wipe the area to be wiped.

[0052] The wiping element 21 is the part that actually contacts the surface of the silicon wafer 200. The shape and size of the wiping element 21 can be customized according to the shape and size of the area to be wiped to ensure the uniformity and efficiency of wiping. Optionally, the surface of the wiping element 21 can also be coated with a special lubricant or cleaning agent to further improve the wiping effect and ensure that there is a color difference between the wiped area and the unwiped area of ​​the silicon wafer 200 with dust after wiping.

[0053] The driving component 22 is the power source for the wiping assembly 2, capable of driving the wiping component 21 to move closer to or away from the silicon wafer 200. Specifically, the driving component 22 drives the wiping component 21 closer to the surface of the silicon wafer 200 to perform the wiping action. After wiping is completed, the driving component 22 then drives the wiping component 21 away from the surface of the silicon wafer 200 to avoid causing unnecessary damage or contamination to the silicon wafer 200.

[0054] In addition, the driving member 22 can also drive the wiping member 21 to move in a direction parallel to the bearing surface of the bearing platform 1 to wipe the entire area to be wiped. Driven by the driving member 22, the wiping member 21 contacts the area to be wiped with appropriate pressure and speed, thereby removing dust and stains from the surface of the silicon wafer 200.

[0055] Optionally, the wiping action of the wiping member 21 driven by the driving member 22 may include single wiping, multiple back-and-forth wiping or rotational wiping, depending on the shape and size of the area to be wiped and the wiping requirements. This application embodiment does not limit this.

[0056] Optionally, the drive unit 22 may include a robotic arm, a motor, a cylinder, or other power unit, as well as a corresponding transmission mechanism, to achieve precise wiping actions. The drive unit 22 may also be equipped with a control system to receive external commands and control the movement trajectory and speed of the wiping component 21.

[0057] In this way, by precisely controlling the movement of the wiping component 21 through the drive component 22, the wiping component 21 can achieve efficient wiping action, thereby shortening the detection cycle and improving detection efficiency, ensuring that the area to be wiped is wiped evenly, thus avoiding the problems of omission or over-wiping.

[0058] Please see Figure 2 In some embodiments, the wiping member 21 is made of a flexible material with an adhesive surface. It is understood that the flexible material has good softness, enabling it to closely adhere to the surface of the silicon wafer 200, ensuring the uniformity and thoroughness of the wiping member 21 in wiping the silicon wafer 200. The soft wiping member 21 can reduce scratches and abrasions on the surface of the silicon wafer 200, protecting the silicon wafer 200 from damage.

[0059] Furthermore, the flexible material can adapt to silicon wafers 200 of different shapes and sizes, ensuring consistent wiping performance. Whether on flat, curved, or complex-shaped silicon wafers 200, the flexible wiping element 21 provides effective wiping results. Moreover, the flexible material has good wear resistance and corrosion resistance, maintaining stable wiping performance over a long period. The wiping element 21 can be reused multiple times, reducing production and waste disposal costs.

[0060] The surface of the wiping element 21 is adhesive, capable of adsorbing dust and fine particles from the surface of the silicon wafer 200, ensuring a more thorough wiping effect. This adhesive property allows the wiping element 21 to more effectively remove contaminants from the surface of the silicon wafer 200 during the wiping process. The adhesive surface reduces dust re-deposition and airborne particles during wiping, improving wiping efficiency. Within the same wiping time, using the adhesive wiping element 21 yields better wiping results.

[0061] Optionally, the wiping element 21 can be a thermoplastic material with an operating temperature of 130°C and a viscosity of 6500, thereby ensuring effective removal of dust from the surface of the silicon wafer 200, so that there is a color difference between the wiped area and the unwiped area of ​​the silicon wafer 200 with dust after wiping.

[0062] Please see Figure 2 In some embodiments, the drive member 22 is a robotic arm capable of gripping the wiping member 21 and the silicon wafer 200.

[0063] Understandably, the robotic arm possesses a sophisticated gripping mechanism and sensors, enabling it to accurately grasp and release the wiping component 21 and the silicon wafer 200, avoiding damage to either. This gripping capability ensures the accuracy and consistency of the wiping operation, while also guaranteeing the safety of the silicon wafer 200 during the transfer process.

[0064] Furthermore, the robotic arm possesses multiple degrees of freedom, enabling complex motion trajectories and posture adjustments. This allows the robotic arm to flexibly move the wiping component 21 to any position on the surface of the silicon wafer 200 and perform effective wiping operations. Simultaneously, the robotic arm can also transfer the silicon wafer 200 from one location to another, meeting different needs in the production process.

[0065] Optionally, the robotic arm can be connected to a programmable logic controller (PLC) or a computer control system to achieve automated control and remote monitoring. Through programming, parameters such as the robotic arm's motion trajectory, speed, and gripping force can be precisely controlled to adapt to different wiping and transfer tasks, improving the flexibility and adjustability of the production process.

[0066] Optionally, the gripping surface of the robot arm that contacts the wiping element 21 or silicon wafer 200 may be provided with a flexible contact structure to ensure that the robot arm will not damage the surface of the wiping element 21 or silicon wafer 200 during the process of gripping and transferring the wiping element 21 or silicon wafer 200.

[0067] Furthermore, the testing equipment 100 may include a conveyor belt 5, on which the silicon wafer 200 can be mounted. The silicon wafer 200 is carried and transported by the conveyor belt 5 to the testing area of ​​the testing equipment 100, where a robotic arm picks up the silicon wafer 200 and places it on the support platform 1 for wiping. The conveyor belt 5 may be equipped with positioning mechanisms, such as sensors or photoelectric switches, to ensure that the silicon wafer 200 is accurately aligned with the working range of the robotic arm during movement. This helps reduce gripping errors caused by positional deviations of the silicon wafer 200, improving the accuracy and reliability of the robotic arm's gripping.

[0068] Please see Figure 3 , Figure 3 This is a schematic diagram of the structure of the support platform 1 provided in an embodiment of this application. In some embodiments, the support platform 1 includes an adsorption port 11, which is disposed on the surface of the support platform 1 for supporting the silicon wafer 200. The adsorption port 11 is used to communicate with a negative pressure generating element to adsorb the silicon wafer 200. Specifically, when the negative pressure generating element is working, a negative pressure is generated inside the adsorption port 11, thereby adsorbing the silicon wafer 200 placed on the support platform 1 and preventing the silicon wafer 200 from sliding or falling off during the wiping process by the wiping element 21.

[0069] It is understandable that the adsorption port 11 adsorbs the silicon wafer 200 by using negative pressure to provide a stable and reliable fixing method. This fixing method is not limited by the shape, size, or weight of the silicon wafer 200, and is suitable for various types of silicon wafers 200, avoiding the damage that may be caused by directly clamping the silicon wafer 200.

[0070] Optionally, the number of adsorption ports 11 can be set to multiple, and the multiple adsorption ports 11 are arranged at intervals along the width direction and / or length direction of the support stage 1, so as to ensure more stable and uniform adsorption of silicon wafer 200 and prevent damage or unstable adsorption caused by excessive adsorption force at a single point.

[0071] Please see Figure 1 and Figure 4 , Figure 4 This is a schematic diagram of the structure of the irradiation element 4 provided in an embodiment of this application. In some embodiments, the detection device 100 further includes the irradiation element 4, which is used to provide irradiation light to the silicon wafer 200. Specifically, the irradiation element 4 can provide stable and uniform irradiation light to the silicon wafer 200. By adjusting the wavelength, intensity, and angle of the irradiation light, the irradiation element 4 can make the color difference on the surface of the silicon wafer 200 more obvious, eliminating detection errors caused by uneven light. At the same time, the enhanced color difference effect makes it easier to identify whether there is dust on the surface of the silicon wafer 200, reducing the number of abnormal silicon wafers 200 entering the next process due to false detection or missed detection, thereby improving the accuracy and reliability of detection.

[0072] Please see Figure 1 and Figure 4 In some embodiments, the length d1 of the irradiation element 4 satisfies 55mm ≤ d1 ≤ 59mm. This size range ensures that the irradiation light can cover the critical area on the silicon wafer 200, while avoiding excessive size that would lead to unnecessary energy waste or interference. Optionally, the length d1 of the irradiation element 4 can be 55mm, 57mm, or 59mm.

[0073] The width d2 of the irradiator 4 satisfies 16mm ≤ d2 ≤ 20mm. This width range helps to provide sufficient light intensity while maintaining the uniformity of the light spot, ensuring that any details on the surface of the silicon wafer 200 can be clearly illuminated. Optionally, the width d2 of the irradiator 4 can be 16mm, 18mm, or 20mm.

[0074] The angle α between the direction of the irradiation light and the silicon wafer 200 satisfies 14.8° ≤ α ≤ 15.2°. This angle range ensures that the irradiation light is uniformly and effectively irradiated onto the surface of the silicon wafer 200. An angle that is too small may result in an excessively large light spot, while an angle that is too large may cause the light to be too concentrated, resulting in uneven illumination. Optionally, the angle α between the direction of the irradiation light and the silicon wafer 200 can be 14.8°, 15°, or 15.2°.

[0075] The angle b between the imaging path of the imaging element 3 and the plane where the silicon wafer 200 is located satisfies: 19.8° ≤ b ≤ 20.2°. This angle range helps the imaging element 3 capture a clear image of the surface of the silicon wafer 200. Optionally, the angle a between the imaging path of the imaging element 3 and the plane where the silicon wafer 200 is located can be 19.8°, 20°, or 20.2°.

[0076] Please see Figure 2 In some embodiments, the wiping member 21 is cylindrical, the diameter d3 of the wiping member 21 satisfies 5mm≤d3≤9mm, and the length d4 of the wiping member 21 satisfies 268mm≤d4≤272mm.

[0077] It is understandable that the wiping element 21 is cylindrical. This shape facilitates rolling or sliding wiping on the surface of the silicon wafer 200, helps to evenly distribute the wiping force, and avoids causing unnecessary damage to the silicon wafer 200.

[0078] The diameter d3 of the wiping element 21 is between 5 mm and 9 mm. This range ensures that the wiping element 21 can effectively cover the surface of the silicon wafer 200 without causing uneven wiping or difficulty in reaching small areas at the edges of the silicon wafer 200 due to an excessively large diameter. The length d4 of the wiping element 21 is between 268 mm and 272 mm. This length range allows the wiping element 21 to be suitable for most sizes of silicon wafers 200 while providing sufficient wiping area to ensure the cleanliness of the silicon wafer 200 surface.

[0079] Optionally, the diameter d3 of the wiping element 21 can be 5mm, 7mm or 9mm, and the length d4 of the wiping element 21 can be 268mm, 270mm or 272mm.

[0080] The second aspect of this application discloses a battery production system, including a testing device 100. Since the battery production system provided in this application includes the testing device 100 provided in the first aspect of this application, the battery production system has the beneficial effects of any of the aforementioned testing devices 100, which will not be elaborated further here.

[0081] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A detection device for detecting dust on silicon wafers, characterized in that, include: A support platform for supporting the silicon wafer; A wiping assembly for wiping a wiping area of ​​the silicon wafer, the wiping area being located on a first surface of the silicon wafer, the wiping area being smaller than the area of ​​the first surface of the silicon wafer; A camera, the camera being used to photograph the first side of the silicon wafer; A detection unit is electrically connected to the imaging device, and the detection unit is used to analyze whether there is a color difference between the wiped area of ​​the first surface and the area outside the wiped area in the image captured by the imaging device.

2. The detection device according to claim 1, characterized in that, The wiping assembly includes a wiping element and a driving element. The driving element can drive the wiping element to move towards or away from the silicon wafer, and the driving element can drive the wiping element to move along a direction parallel to the bearing surface of the bearing platform to wipe the area to be wiped.

3. The detection device according to claim 2, characterized in that, The wiping device is made of a flexible material and has an adhesive surface.

4. The detection device according to claim 2, characterized in that, The driving component is a robotic arm, which is capable of gripping the wiping component and the silicon wafer.

5. The detection device according to claim 1, characterized in that, The support platform includes an adsorption port, which is disposed on the surface of the support platform used to support the silicon wafer. The adsorption port is used to connect to a negative pressure generating element to adsorb the silicon wafer.

6. The detection device according to claim 1, characterized in that, The detection device also includes an irradiation element for providing irradiation light to the silicon wafer.

7. The detection device according to claim 6, characterized in that, The length d1 of the irradiation element satisfies 55mm≤d1≤59mm, and the width d2 of the irradiation element satisfies 16mm≤d2≤20mm; The angle α between the irradiation direction of the irradiation light and the silicon wafer satisfies 14.8°≤a≤15.2°, and the angle b between the imaging path of the imaging device and the plane where the silicon wafer is located satisfies 19.8°≤b≤20.2°.

8. The detection device according to claim 2, characterized in that, The wiping element is cylindrical, and the diameter d3 of the wiping element satisfies 5mm≤d3≤9mm, and the length d4 of the wiping element satisfies 268mm≤d4≤272mm.

9. A battery production system, characterized in that, The detection equipment includes any one of claims 1 to 8.

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