A round tube inner wall coating device
By using a microwave solid-state source and a coaxial connector to form a microwave plasma host device, combined with a dielectric nozzle and resonant cavity design, uniform coating of the inner wall of a slender circular tube was achieved, solving the problem of plasma not being able to be fed in and achieving a low-cost, high-efficiency coating effect.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- CHENGDU FENYU ELECTRONIC TECH CO LTD
- Filing Date
- 2025-06-23
- Publication Date
- 2026-06-02
AI Technical Summary
In existing technologies, plasma cannot be effectively fed into the interior of slender cylindrical tubes, resulting in the inability to complete the coating process.
The microwave plasma body, which uses a microwave solid-state source and a coaxial connector, achieves stable plasma ejection through a dielectric nozzle and a nozzle tip. The inner diameter of the nozzle tip can be as low as 1 mm, and small holes are arranged around it. Combined with the design of the resonant cavity and the dielectric nozzle, uniform coating is achieved on the inner wall of the slender cylindrical tube.
A low-cost, high-efficiency, uniform coating was achieved on the inner wall of a slender cylindrical tube, solving the problem of plasma not being able to be fed in.
Smart Images
Figure CN224313651U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of microwave plasma coating technology, and more specifically to the field of a coating device for the inner wall of a circular tube. Background Technology
[0002] Plasma deposition is an advanced process that uses plasma technology to modify or deposit thin films on material surfaces. Its core principle is to decompose and ionize gaseous or solid materials using high-energy plasma, forming a uniform and dense thin film on the substrate surface. Due to its advantages such as high adhesion, excellent performance, and environmental friendliness, this technology is widely used in semiconductors, photovoltaics, automobiles, optics, and many other fields.
[0003] Patent CN102206815B, entitled "Plasma Coating Apparatus," discloses the following: A plasma coating apparatus includes a cavity and a reaction device housed within the cavity. A substrate to be coated is disposed on the inner wall of the cavity. The reaction device includes two opposing electrode substrates and a precursor storage cavity. The precursor storage cavity is connected to an electric field formed between the two electrode substrates. The precursor storage cavity includes a carrier gas inlet, through which carrier gas enters the precursor storage cavity and carries the vaporized non-gaseous reactant through the gas outlet into the electric field to react with the gaseous reactant to coat the substrate. Compared with the prior art, the plasma coating apparatus provided by this invention, by placing the substrate to be coated outside the electric field and confining the fluxing ions within the electric field, reduces the impact damage to the surface of the substrate by high-speed fluxing ions, thereby improving the coating quality.
[0004] In the aforementioned patents and existing plasma coating solutions, the plasma cannot be effectively fed into the interior of slender cylindrical tubes, thus preventing the coating process from being completed. Utility Model Content
[0005] The purpose of this invention is to solve the technical problem that plasma cannot be effectively fed into slender cylindrical tubes, thus hindering film deposition. This invention provides a coating device for the inner wall of a cylindrical tube. This device can achieve uniform film deposition on the inner wall of slender cylindrical tubes at low cost and high efficiency.
[0006] To achieve the above objectives, this utility model specifically adopts the following technical solution:
[0007] This utility model provides a coating device for the inner wall of a circular tube, including a microwave solid-state source, a coaxial connector and a microwave plasma body, wherein the microwave solid-state source is connected to the microwave plasma body through the coaxial connector.
[0008] The microwave plasma body includes a metal outer cavity, a resonant column fixedly disposed at one end of the metal outer cavity, a dielectric nozzle movably disposed at the other end of the metal outer cavity, a metal cover plate locking the dielectric nozzle onto the metal outer cavity, a nozzle tip connected to the dielectric nozzle, and a microwave coupling rod disposed within the metal outer cavity; the dielectric nozzle is sleeved on the resonant column, a coaxial connector passes through the metal outer cavity and is connected to the resonant column through the microwave coupling rod, and the nozzle tip extends out of the metal cover plate;
[0009] The nozzle tip is a slender tube with an inner diameter as low as 1 mm. A sealing component is provided at the end of the nozzle tip away from the medium nozzle. Several small holes are evenly distributed on the side wall of the end of the nozzle tip away from the medium nozzle.
[0010] Specifically, a slender tube is provided at the bottom of the medium nozzle, with an inner diameter as low as 1 mm. The length of the slender tube can be adjusted as needed, usually from 10 mm to 100 mm or other lengths. The top of the nozzle front end is sealed, and multiple small holes are evenly arranged around it.
[0011] In one embodiment, the metal outer cavity is a cylindrical body with a sealed upper end and an open lower end. The resonant column is disposed on the internal axis of the metal outer cavity. The upper end of the resonant column is fixedly connected to the inside of the metal outer cavity, and the lower end of the resonant column is open and suspended. The metal outer cavity and the resonant column together form a resonant cavity. The resonant frequency of the resonant cavity is between 2.4 GHz and 2.5 GHz, and the maximum electric field is focused at the open end of the resonant column.
[0012] In one embodiment, the resonant pillar is made of a high-temperature resistant metal, which is one of tungsten metal, tungsten alloy, titanium alloy, or Kovar alloy.
[0013] Specifically, the resonant pillar is made of high-temperature resistant metal, including but not limited to tungsten, tungsten alloy, titanium alloy, Kovar alloy, etc.
[0014] In one embodiment, the medium nozzle includes a nozzle cover fitted onto the open end of the resonant column, wherein the inner diameter of the nozzle cover fitted onto the open end of the resonant column is larger than the outer diameter of the resonant column, and the outer diameter of the nozzle cover fitted onto the open end of the resonant column is smaller than the inner diameter of the metal outer cavity.
[0015] The nozzle cover at the end furthest from the resonant column is provided with a tapered opening with a gradually decreasing diameter, which is connected to the front end of the nozzle.
[0016] Specifically, the nozzle cover fitted on the open end of the resonant column has a circular opening and a tapered lower end, with the upper diameter of the tapered opening being larger than the lower diameter. This is beneficial for the stable ejection of the plasma body by the airflow.
[0017] In one embodiment, a flange is provided on the outer wall of the media nozzle, and the media nozzle is fixed to the lower end of the metal outer cavity by pressing the flange with a metal cover plate.
[0018] Specifically, this means that the device can operate safely and stably even under conditions of high airflow.
[0019] In one embodiment, the medium nozzle is made of quartz or ceramic.
[0020] In one embodiment, at least two symmetrical process vents are provided at the lower end of the metal outer cavity. Each process vent is connected to the corresponding molten material pipe. The process vents are radial holes and are located on the metal outer cavity corresponding to the medium nozzle.
[0021] Specifically, the process gas vent is usually connected to a 6mm outer diameter molten metal pipe. The process gas enters the metal outer cavity through the process gas vent. Due to the obstruction of the outer wall of the medium nozzle, the process gas flows to the top of the metal outer cavity and bounces back into the circular opening of the medium nozzle. Through the guidance of the above structure, the gas flow rate can be stably ejected from the device even when it changes from 0.5L / min to 30L / min, thereby supporting the stable operation of the plasma.
[0022] In one embodiment, the frequency of the microwave solid-state source is 2.4 GHz to 2.5 GHz, and the frequency is adjustable in 0.1 MHz increments; the power of the microwave solid-state source is adjustable from 0 to 500 W, and the microwave solid-state source supports continuous wave and pulse modes, with the pulse frequency adjustable up to 500 kHz.
[0023] In one embodiment, the output port of the microwave solid-state source is an N-type coaxial interface, which is connected to the microwave plasma body via a coaxial connector.
[0024] Specifically, the microwave solid-state source, coaxial connector, and microwave plasma body are directly connected to form an integrated structure, which can minimize losses and save on coaxial cable costs.
[0025] Working principle: During coating, the slender steel pipe to be coated is passed through the nozzle tip, process gas is introduced, microwave power is turned on, and plasma is ejected through the nozzle tip of the medium nozzle and adheres to the inner wall of the slender steel pipe. By moving the slender steel pipe at a uniform speed, the entire inner wall of the pipe is coated.
[0026] The beneficial effects of this utility model are as follows:
[0027] A slender tube with an inner diameter as low as 1 mm is installed at the lower tip of the medium nozzle. The length of the slender tube can be adjusted as needed, typically from 10 mm to 100 mm or other lengths. The nozzle tip is sealed at the top, and multiple small holes are evenly arranged around its perimeter. This device can achieve uniform film deposition on the inner wall of a slender cylindrical tube at low cost and high efficiency. It solves the technical problem that plasma cannot be properly fed into a slender cylindrical tube, thus preventing film deposition. Attached Figure Description
[0028] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this utility model and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained from these drawings without creative effort.
[0029] Figure 1 This is a three-dimensional structural schematic diagram of the present invention;
[0030] Figure 2 yes Figure 1 A view;
[0031] Figure 3 yes Figure 2 Sectional view at point AA;
[0032] Figure 4 This is a schematic diagram of the structure of the media nozzle and the nozzle tip;
[0033] Figure 5 This is a partial structural diagram of the present invention during operation;
[0034] Reference numerals: 1. Microwave solid-state source; 2. Coaxial connector; 3. Microwave plasma body; 31. Microwave coupling rod; 32. Metal outer cavity; 33. Metal cover plate; 34. Process vent; 35. Resonant column; 36. Dielectric nozzle; 37. Nozzle tip; 4. Slender steel tube. Detailed Implementation
[0035] To make the technical problems, technical solutions, and technical effects of this utility model clearer, the technical solutions of this utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments of this utility model. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments. The components of the embodiments of this utility model described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.
[0036] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention.
[0037] It should be noted that similar reference numerals and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures. Furthermore, the terms "first," "second," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.
[0038] In the description of the embodiments of this utility model, it should be noted that the terms "inner", "outer", "upper", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship that the utility model product is usually placed in during use. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.
[0039] Example 1
[0040] like Figures 1 to 5 As shown, this embodiment provides a coating device for the inner wall of a circular tube, including a microwave solid-state source 1, a coaxial connector 2, and a microwave plasma body 3. The microwave solid-state source 1 is connected to the microwave plasma body 3 through the coaxial connector 2.
[0041] The microwave plasma body 3 includes a metal outer cavity 32, a resonant column 35 fixedly disposed at one end of the metal outer cavity 32, a dielectric nozzle 36 movably disposed at the other end of the metal outer cavity 32, a metal cover plate 33 locking the dielectric nozzle 36 onto the metal outer cavity 32, a nozzle tip 37 connected to the dielectric nozzle 36, and a microwave coupling rod 31 disposed within the metal outer cavity 32; the dielectric nozzle 36 is partially sleeved on the resonant column 35, the coaxial connector 2 passes through the metal outer cavity 32 and is connected to the resonant column 35 through the microwave coupling rod 31, and the nozzle tip 37 extends out of the metal cover plate 33.
[0042] The nozzle tip 37 is a slender tube with an inner diameter as low as 1 mm. A sealing component is provided at the end of the nozzle tip 37 away from the medium nozzle 36. Several small holes are evenly distributed on the side wall of the end of the nozzle tip 37 away from the medium nozzle 36.
[0043] Specifically, a slender tube with an inner diameter as low as 1 mm is provided at the lower tip of the medium nozzle 36. The length of the slender tube can be adjusted as needed, typically from 10 mm to 100 mm or other lengths. The nozzle tip 37 is sealed at the top, and multiple small holes are evenly arranged around its perimeter. This device can achieve uniform film coating on the inner wall of a slender cylindrical tube at low cost and high efficiency. It solves the technical problem that plasma cannot be properly fed into a slender cylindrical tube, thus preventing the completion of film coating.
[0044] Example 2
[0045] This embodiment is a further optimization based on Embodiment 1, specifically:
[0046] The outer metal cavity 32 is a cylindrical body with a sealed upper end and an open lower end. The resonant column 35 is set on the internal axis of the outer metal cavity 32. The upper end of the resonant column 35 is fixedly connected to the inside of the outer metal cavity 32, and the lower end of the resonant column 35 is open and suspended. The outer metal cavity 32 and the resonant column 35 together form a resonant cavity. The resonant frequency of the resonant cavity is between 2.4 GHz and 2.5 GHz, and the maximum electric field is focused at the open end of the resonant column 35.
[0047] The resonant column 35 is made of a high-temperature resistant metal, which is one of tungsten, tungsten alloy, titanium alloy or Kovar alloy.
[0048] Specifically, the resonant pillar 35 is made of high-temperature resistant metal, including but not limited to tungsten, tungsten alloy, titanium alloy, Kovar alloy, etc.
[0049] Example 3
[0050] This embodiment is a further optimization based on embodiment 2, specifically:
[0051] The medium nozzle 36 includes a nozzle cover sleeved on the open end of the resonant column 35. The inner diameter of the nozzle cover sleeved on the open end of the resonant column 35 is larger than the outer diameter of the resonant column 35, and the outer diameter of the nozzle cover sleeved on the open end of the resonant column 35 is smaller than the inner diameter of the metal outer cavity 32.
[0052] The nozzle cover at the end away from the resonant column 35 is provided with a tapered opening with a gradually decreasing diameter, and the tapered opening is connected to the nozzle front end 37.
[0053] Specifically, the nozzle cover fitted on the open end of the resonant column 35 has a circular opening and a tapered lower end, with the upper diameter of the tapered opening being larger than the lower diameter. This is beneficial for the stable ejection of the plasma body by the airflow.
[0054] A flange is provided on the outer wall of the media nozzle 36. The media nozzle 36 is fixed to the lower end of the metal outer cavity 32 by pressing the flange with the metal cover plate 33.
[0055] Specifically, this means that the device can operate safely and stably even under conditions of high airflow.
[0056] The medium nozzle 36 is made of quartz or ceramic.
[0057] Example 4
[0058] This embodiment is a further optimization based on embodiment 3, specifically:
[0059] At least two symmetrical process vents 34 are provided at the lower end of the metal outer cavity 32. Each process vent 34 is connected to the corresponding molten material pipe. The process vent 34 is a radial hole and is located on the metal outer cavity 32 corresponding to the medium nozzle 36.
[0060] Specifically, the process gas port 34 is usually connected to a 6mm outer diameter clinker pipe. The process gas enters the metal outer cavity 32 through the process gas port 34. Due to the obstruction of the outer wall of the medium nozzle 36, the process gas flows to the top of the metal outer cavity 32 and bounces back into the circular opening of the medium nozzle 36. Through the guidance of the above structure, the gas flow rate can be stably ejected from the device when it changes from 0.5L / min to 30L / min, thereby supporting the stable operation of the plasma.
[0061] The frequency of microwave solid-state source 1 is 2.4GHz to 2.5GHz and is adjustable in 0.1MHz increments; the power of microwave solid-state source 1 is adjustable from 0 to 500W; microwave solid-state source 1 supports continuous wave and pulse modes, and the pulse frequency can be adjusted up to 500KHz.
[0062] The output port of the microwave solid-state source 1 is an N-type coaxial interface, and it is connected to the microwave plasma body 3 through the coaxial connector 2.
[0063] Specifically, the microwave solid-state source 1, the coaxial connector 2, and the microwave plasma body 3 are directly connected to form an integrated structure, which can minimize losses and save on coaxial cable costs.
[0064] Working principle: During coating, the slender steel pipe 4 to be coated is passed through the nozzle front end 37, process gas is introduced, microwave power is turned on, plasma is ejected through the nozzle front end 37 of the medium nozzle 36 and adheres to the inner wall of the slender steel pipe 4. By moving the slender steel pipe 4 at a uniform speed, the coating of the entire inner wall of the pipe is achieved.
Claims
1. A device for coating the inner wall of a circular tube, characterized in that, It includes a microwave solid-state source (1), a coaxial connector (2), and a microwave plasma body (3), wherein the microwave solid-state source (1) is connected to the microwave plasma body (3) through the coaxial connector (2); The microwave plasma body (3) includes a metal outer cavity (32), a resonant column (35) fixedly disposed at one end of the metal outer cavity (32), a dielectric nozzle (36) movably disposed at the other end of the metal outer cavity (32), a metal cover plate (33) locking the dielectric nozzle (36) on the metal outer cavity (32), a nozzle tip (37) connected to the dielectric nozzle (36), and a microwave coupling rod (31) disposed in the metal outer cavity (32); the dielectric nozzle (36) is partially sleeved on the resonant column (35), the coaxial connector (2) passes through the metal outer cavity (32) and is connected to the resonant column (35) through the microwave coupling rod (31), and the nozzle tip (37) partially extends out of the metal cover plate (33); The nozzle tip (37) is a long and thin tube. A sealing component is provided at the end of the nozzle tip (37) away from the medium nozzle (36). Several small holes are evenly distributed on the side wall of the end of the nozzle tip (37) away from the medium nozzle (36).
2. The device for coating the inner wall of a circular tube according to claim 1, characterized in that, The metal outer cavity (32) is a cylindrical body with a sealed upper end and an open lower end. The resonant column (35) is set on the internal axis of the metal outer cavity (32). The upper end of the resonant column (35) is fixedly connected to the inside of the metal outer cavity (32), and the lower end of the resonant column (35) is open and suspended. The metal outer cavity (32) and the resonant column (35) together form a resonant cavity. The resonant frequency of the resonant cavity is between 2.4 GHz and 2.5 GHz, and the maximum electric field is focused at the open end of the resonant column (35).
3. The device for coating the inner wall of a circular tube according to claim 2, characterized in that, The resonant column (35) is made of a high-temperature resistant metal, which is one of tungsten metal, tungsten alloy, titanium alloy or Kovar alloy.
4. The device for coating the inner wall of a circular tube according to claim 2, characterized in that, The medium nozzle (36) includes a nozzle cover sleeved on the open end of the resonant column (35). The inner diameter of the nozzle cover sleeved on the open end of the resonant column (35) is larger than the outer diameter of the resonant column (35), and the outer diameter of the nozzle cover sleeved on the open end of the resonant column (35) is smaller than the inner diameter of the metal outer cavity (32). A tapered opening with a gradually decreasing diameter is provided on the nozzle cover at the end away from the resonant column (35), and the tapered opening is connected to the nozzle front end (37).
5. The device for coating the inner wall of a circular tube according to claim 4, characterized in that, A flange is provided on the outer wall of the medium nozzle (36). The medium nozzle (36) is fixed at the lower end of the metal outer cavity (32) by pressing the flange with the metal cover plate (33).
6. The device for coating the inner wall of a circular tube according to claim 4, characterized in that, The medium nozzle (36) is made of quartz or ceramic.
7. The device for coating the inner wall of a circular tube according to claim 1, characterized in that, At least two symmetrical process air holes (34) are provided at the lower end of the metal outer cavity (32). Each process air hole (34) is connected to the corresponding clinker pipe. The process air hole (34) is a radial hole and is located on the metal outer cavity (32) corresponding to the medium nozzle (36).
8. The device for coating the inner wall of a circular tube according to claim 1, characterized in that, The microwave solid-state source (1) has a frequency of 2.4 GHz to 2.5 GHz, and the frequency is adjustable in 0.1 MHz increments.
9. The device for coating the inner wall of a circular tube according to claim 1, characterized in that, The power of the microwave solid-state source (1) is adjustable from 0 to 500W. The microwave solid-state source (1) supports continuous wave and pulse modes, and the pulse frequency can be adjusted up to 500KHz.
10. The device for coating the inner wall of a circular tube according to claim 1, characterized in that, The output port of the microwave solid-state source (1) is an N-type coaxial interface, and it is connected to the microwave plasma body (3) through the coaxial connector (2).