Recovery apparatus and semiconductor device

Abstract

This utility model relates to the field of semiconductor manufacturing equipment technology, specifically providing a recycling device and semiconductor equipment, aiming to solve the problem of easy blockage of exhaust pipes in some existing semiconductor equipment, which affects the normal operation of the production line. To this end, the recycling device provided in this application is used to recover the gas discharged from the semiconductor reaction chamber. The recycling device includes: an exhaust pipe, the inlet of which is connected to the exhaust end of the semiconductor reaction chamber; the exhaust pipe includes a heating pipe section and a cooling pipe section connected along the airflow direction; the gas is heated to maintain a gaseous state when flowing through the heating pipe section, and cooled to at least partially convert into a solid state when flowing through the cooling pipe section; a vacuum pump, the suction end of which is connected to the exhaust end of the cooling pipe section; and a collection box connected to the exhaust end of the vacuum pump. The recycling device provided in this application can confine the process of converting the gas discharged from the reaction chamber into a solid state and depositing it within the cooling pipe section, thereby effectively preventing blockage of the exhaust pipe and damage to the vacuum pump.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing equipment technology, specifically providing a recycling device and semiconductor equipment. Background Technology

[0002] In the semiconductor manufacturing field, low-pressure chemical vapor deposition (LPCVD) technology deposits a solid film on the wafer surface through a gas-phase chemical reaction under low pressure. Silicon nitride (Si3N4) thin film processing is a type of LPCVD, primarily used as a masking film for localized oxidation and as a dielectric film for capacitors. The gases typically used in the silicon nitride thin film process are ammonia (NH3) and silicon dichlorosilane (SiH2Cl2), with the reaction formula: 4NH3 + 3SiH2Cl2 = Si3N4 + 6H2 + 6HCl. Silicon nitride films formed using this process have advantages such as high quality and good film thickness uniformity, and are currently a widely adopted technology both domestically and internationally.

[0003] Currently, silicon nitride thin film processing is generally carried out using a diffusion furnace. The reaction chamber of the diffusion furnace is connected to a vacuum pump via an exhaust pipe, which creates a vacuum environment in the reaction chamber. Under these conditions, the silicon nitride generated in the reaction chamber is uniformly deposited on the wafer surface. The gaseous products of the reaction, hydrogen chloride (HCl) and excess ammonia (NH3), are discharged from the reaction chamber, flow through the exhaust pipe to the vacuum pump, and are ultimately discharged into a waste gas collection box for centralized recovery and treatment.

[0004] In the above process, at low temperatures, excess ammonia reacts with hydrogen chloride to form ammonium chloride solid. These solids easily adhere to the inner wall of the exhaust pipe, especially when the pipe cools from high temperature to room temperature, at which point the adhesion becomes more severe. Excessive deposition of these products can clog the pipe, preventing the gaseous products from being discharged normally and affecting the normal operation of the production line.

[0005] In related technologies, a common method for resolving exhaust pipe blockage is to wrap the entire section of the exhaust pipe with heating tape and set the temperature of the heating tape to 150°C or slightly higher to ensure that the exhaust pipe remains at a high temperature and reduce the adhesion of byproducts. However, this method has many drawbacks. On the one hand, the high temperature causes byproducts to enter the suction pump and inevitably adhere to the pump rotor, making them difficult to remove. Long-term accumulation will affect the normal operation of the pump, thereby affecting the normal operation of the diffusion furnace, and will also significantly shorten the pump's service life. On the other hand, the installation cost of a large number of heating tapes is high, and maintaining the high temperature of the pipe also requires a large amount of electrical energy.

[0006] Therefore, a new technical solution is needed to address the above problems. Utility Model Content

[0007] This application aims to solve the aforementioned technical problems, namely, to address the issue in existing silicon nitride thin film processes where ammonium chloride solids generated by the reaction of excessive ammonia with hydrogen chloride adhere to the inner wall of the exhaust pipe, causing pipe blockage, affecting the normal operation of the production line, and resulting in time-consuming, labor-intensive, and costly pipe maintenance, cleaning, and installation.

[0008] In a first aspect, this application provides a recovery apparatus for recovering gases discharged from a semiconductor reaction chamber, comprising:

[0009] An exhaust duct, the inlet of which is connected to the exhaust end of the semiconductor reaction chamber, the exhaust duct including a heating section and a cooling section detachably connected along the airflow direction, wherein the gas is heated to maintain a gaseous state when flowing through the heating section and cooled to at least partially convert into a solid state when flowing through the cooling section; a vacuum pump, the suction end of which is detachably connected to the exhaust end of the cooling section; and a collection box connected to the exhaust end of the vacuum pump.

[0010] Optionally, the cooling pipe section includes:

[0011] The inner tube forms an airflow channel; the outer tube is sleeved outside the inner tube and forms an annular channel with the inner tube, the annular channel being used to introduce cooling medium.

[0012] Optionally, the inlet end of the annular channel is close to the air pump, and the outlet end of the annular channel is close to the heating tube section.

[0013] Optionally, the cooling pipe section is provided with a flow guiding component, which extends axially along the cooling pipe section.

[0014] Optionally, the flow guiding component includes:

[0015] A support member extending axially along the cooling pipe section; a plurality of guide vanes, each connected to the support member, the plurality of guide vanes being arranged at intervals along the axial and radial directions of the cooling pipe section.

[0016] Optionally, the support member is detachably connected to the cooling pipe section.

[0017] Optionally, the guide vane is arc-shaped; and / or, the end of the guide vane near the support member is provided with a baffle, the size of which is smaller than the interval between adjacent guide vanes along the extension direction of the support member.

[0018] Optionally, the heating tube segment includes:

[0019] The main body of the pipe is connected between the exhaust end of the semiconductor reaction chamber and the cooling pipe section; the heating band is wrapped around the outer surface of the main body of the pipe.

[0020] Optionally, the exhaust pipe further includes:

[0021] A connecting pipe section is provided, which connects the cooling pipe section and the air pump; the cooling pipe section and the connecting pipe section are detachably connected.

[0022] In a second aspect, this application provides a semiconductor device, comprising: a semiconductor reaction chamber and a recycling apparatus as described in any one of the first aspects.

[0023] By employing the above technical solution, the recovery device provided in this application effectively prevents exhaust pipe blockage and solid matter from entering the air pump by confining the generation and deposition of solid substances such as ammonium chloride within the cooling pipe section. This protects the air pump from scale buildup, ensuring pumping efficiency and operational lifespan. Furthermore, the recovery device also solves the problems of time-consuming and labor-intensive pipeline maintenance and installation, as well as high daily maintenance costs.

[0024] The semiconductor equipment provided in this application includes a semiconductor reaction chamber and a recycling device as described above. The recycling device is connected to the exhaust end of the semiconductor reaction chamber. By integrating a recycling device with features such as segmented temperature control, optimized flow guidance, and modular structure, the stability, reliability, and service life of the semiconductor equipment are all improved. Attached Figure Description

[0025] The preferred embodiments of this application are described below with reference to the accompanying drawings, in which:

[0026] Figure 1 This is a schematic diagram of the structure of a semiconductor device according to an embodiment of this application;

[0027] Figure 2 This is a schematic diagram of the structure of a cooling pipe section of an exhaust pipe according to an embodiment of this application;

[0028] Figure 3 This is a schematic diagram of the structure of a flow guiding component according to an embodiment of this application.

[0029] List of reference numerals in the attached diagram:

[0030] 10-Semiconductor reaction chamber, 11-Heating tube section, 111-Heating belt, 112-Control valve, 113-Pressure gauge, 12-Cooling tube section, 120-Annular channel, 1201-Liquid inlet end, 1202-Liquid outlet end, 121-Inner tube, 122-Outer tube, 123-Flange, 13-Connecting tube section, 20-Air pump, 30-Collection box, 4-Flow guide assembly, 40-Support ring, 401-Mounting bracket, 402-Baffle, 41-Support component, 42-Flow guide plate. Detailed Implementation

[0031] Preferred embodiments of this application are described below with reference to the accompanying drawings. Those skilled in the art should understand that these embodiments are merely illustrative of the technical principles of this application and are not intended to limit the scope of protection of this application. Those skilled in the art can make adjustments as needed to adapt to specific application scenarios.

[0032] It should be noted that in the description of this application, terms such as "upper", "lower", "left", "right", "inner", and "outer" that indicate direction or positional relationship are based on the direction or positional relationship shown in the accompanying drawings. This is only for the convenience of description and is not intended to indicate or imply that the relevant device or component must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation of this application.

[0033] Furthermore, it should be noted that, in the description of this application, unless otherwise expressly specified and limited, the terms "installation" and "connection" should be interpreted broadly. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to mechanical connections or electrical connections; they can refer to direct connections or indirect connections through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0034] This embodiment provides a recovery device for collecting and processing reaction gases and byproducts discharged from semiconductor devices, achieving gas-solid separation and preventing pipeline blockage.

[0035] Figure 1 This is a schematic diagram of a semiconductor device according to an embodiment of this application. This embodiment is described using a diffusion furnace used in a silicon nitride thin film process as an example. Figure 1 As shown, the semiconductor device includes a semiconductor reaction chamber 10, which is the core component of the silicon nitride thin film process. The chamber uses a high-temperature, low-vacuum environment to drive a chemical reaction, thereby forming a silicon nitride thin film on a substrate such as a wafer. During this process, gaseous products such as hydrogen chloride and excess reactants such as ammonia discharged from the semiconductor reaction chamber 10 enter a recovery device for collection and processing.

[0036] Specifically, the recovery device includes an exhaust pipe, a vacuum pump 20, and a collection box 30 connected in sequence. The exhaust pipe is connected to the exhaust end of the semiconductor reaction chamber 10; driven by the vacuum pump 20, the gas generated in the semiconductor reaction chamber 10 flows sequentially through the exhaust pipe and the vacuum pump 20, and finally enters the collection box 30. Furthermore, the vacuum pump 20 can provide the semiconductor reaction chamber 10 with a low vacuum environment required for silicon nitride thin film processing.

[0037] In this embodiment, the collection box 30 can specifically adopt a scrubber, a commonly used exhaust gas treatment device in the semiconductor field. In semiconductor manufacturing, it is used to treat toxic, corrosive, and flammable and explosive process waste gases. It can convert toxic and harmful substances into substances that can be safely discharged through physical or chemical methods.

[0038] Further, refer to Figure 1 The exhaust pipe includes a heating pipe section 11 and a cooling pipe section 12 that are interconnected. When the vacuum pump 20 is running, gas flows sequentially from the exhaust end of the semiconductor reaction chamber 10 through the heating pipe section 11 and the cooling pipe section 12. The heating pipe section 11 includes a pipe body and a heating element installed on the pipe body, which maintains a high-temperature environment inside the pipe body by continuously supplying heat; the cooling pipe section 12 is equipped with a cooling element, which maintains a low-temperature environment inside the pipe by continuously cooling.

[0039] This design aims to ensure that the gas remains in a gaseous state as it flows through the heating section 11, minimizing deposition. Of course, the required temperature varies depending on the gas composition. For silicon nitride film deposition processes, the main gas components are ammonia and hydrogen chloride, so the gas temperature is generally controlled above 150 degrees Celsius. When flowing through the cooling section 12, the low-temperature environment accelerates gas reactions and the precipitation and aggregation of reaction products. For example, in silicon nitride thin film processes, the low temperature causes ammonia and hydrogen chloride in the gas to react and generate solid ammonium chloride, which is then deposited primarily within the cooling section 12, facilitating subsequent centralized treatment of these deposits. In practice, the temperature in the cooling section 12 is generally controlled below 20 degrees Celsius.

[0040] By confining the formation and deposition of ammonium chloride within the cooling section 12, the concentrations of unreacted ammonia and hydrogen chloride are significantly reduced due to chemical consumption, falling below the critical concentrations for reaction at low temperatures. Even if a small amount of residual gas enters the vacuum pump 20, it is difficult for it to regenerate solid ammonium chloride, or the amount of solid ammonium chloride generated is greatly reduced. These residual gases are subsequently collected and treated in the collection box 30. In this process, the cooling section 12 not only serves as the triggering area for the reaction but also plays a crucial role in intercepting deposits, effectively preventing solids from entering the vacuum pump 20 and adhering to the rotor or the surface of precision components. As a result, the vacuum pump 20 and semiconductor equipment are protected from fouling, ensuring pumping efficiency and operational lifespan.

[0041] In one specific embodiment, the heating component employs a heating band 111, which wraps around the outer wall of the heating pipe section 11, allowing heat to be evenly transferred to the gas inside the pipe. The covering of the heating band 111 can eliminate temperature distribution differences, ensuring that the gas is heated uniformly when flowing through the heating pipe section 11, and avoiding the risk of by-product deposition caused by local low temperatures.

[0042] In one embodiment, reference Figure 2 The cooling pipe section 12 adopts a nested double-pipe structure, mainly composed of an inner pipe 121 and an outer pipe 122. The inner pipe 121 serves as the core airflow channel, used to transport the mixed gas after the reaction; the outer pipe 122 is sleeved outside the inner pipe 121, and the two form an annular channel 120. This annular channel 120 serves as the flow path for the cooling medium, and can indirectly cool the airflow in the inner pipe 121 by injecting circulating cooling water or other cooling media.

[0043] In one specific embodiment, the two ends of the outer tube 122 are respectively connected to pipe joints, which serve as the inlet and outlet of the annular channel 120 for the inflow and outflow of the cooling medium.

[0044] Please continue to refer to this. Figure 2 In one embodiment, the liquid inlet 1201 of the annular channel 120 is located near the side of the vacuum pump 20, and the liquid outlet 1202 of the annular channel 120 is located near the side of the heating tube section 11. That is, the flow direction of the cooling medium is opposite to the flow direction of the high-temperature airflow in the inner tube 121, forming a counter-current heat exchange layout. This helps to maximize the temperature difference between the gas and the cooling medium, thereby improving the heat exchange efficiency.

[0045] It is understandable that the longer the cooling pipe section 12, the more conducive it is to sufficient solid deposition. Practice shows that, according to the current specifications of equipment exhaust pipes, the length of the cooling pipe section 12 should not be less than 4 times its diameter to ensure sufficient deposition area. Of course, considering factors such as cost, in specific implementations, the length of the cooling pipe section 12 is approximately 4 to 5 times its diameter. Of course, if the cooling pipe section 12 adopts a nested double-tube structure, the length of the inner tube 121 is approximately 4 to 5 times its diameter.

[0046] Furthermore, in one implementation, such as Figure 1 As shown, due to layout considerations, a pressure gauge 113 and a control valve 112 are installed in the heating tube section 11 to precisely regulate the gas flow rate. Considering that the heating tube section 11 is connected to the semiconductor reaction chamber 10 and their pressures are consistent, the pressure gauge 113 monitors the pressure inside the semiconductor reaction chamber 10 by real-time monitoring of pressure changes within the heating tube section 11, and feeds the data back to the control system to ensure that the pressure inside the semiconductor reaction chamber 10 matches the programmed setting. The control valve 112 dynamically adjusts its opening degree according to a preset pressure threshold, limiting or increasing the amount of mixed gas entering the exhaust pipe. By actively controlling the gas flow rate and pressure, the pressure inside the semiconductor reaction chamber 10 can be guaranteed to meet process requirements, ensuring the normal operation of the silicon nitride thin film deposition process within the semiconductor reaction chamber 10.

[0047] Furthermore, in actual semiconductor production line deployments, due to limitations in equipment layout and installation space, reaction chamber 10 and vacuum pump 20 often need to be connected by a long-distance exhaust pipe.

[0048] To balance cost-effectiveness and engineering feasibility, in one embodiment, the exhaust duct is further provided with a connecting pipe section 13. The connecting pipe section 13 is not equipped with heating or cooling temperature control elements; its main function is physical extension and interface adaptation, serving as a transition area between the cooling pipe section 12 and the extraction pump 20. Since the connecting pipe section 13 is located downstream of the deposition control zone and the concentration of residual reactive gases has been significantly reduced, its ambient temperature design avoids additional temperature control energy consumption and simplifies the structure, thereby reducing installation and maintenance costs.

[0049] In one embodiment, the cooling pipe section 12 is detachably connected to the heating pipe section 11 and the connecting pipe section 13 via flanges 123. Seals are provided between the cooling pipe section 12 and the heating pipe section 11, and between the cooling pipe section 12 and the connecting pipe section 13, to ensure the overall sealing of the exhaust pipe. This structural design allows the cooling pipe section 12 to be independently disassembled from the entire exhaust pipe. On the one hand, this facilitates the cleaning of ammonium chloride solids deposited inside the cooling pipe section 12, effectively preventing pipe blockage caused by ammonium chloride solids accumulation. On the other hand, if the cooling pipe section 12 is damaged, aged, or requires performance upgrades, it can be quickly replaced, improving the convenience and efficiency of system maintenance.

[0050] Further reference Figure 2 In one embodiment, the cooling pipe section 12 is provided with an axially extending flow guiding component 4, which can guide the flow of gas in the cooling pipe section 12 and make it fully deposited in the cooling pipe by changing the flow path of the airflow.

[0051] In a preferred embodiment, as described above, the cooling pipe section 12 mainly consists of an inner pipe 121 and an outer pipe 122 forming a nested double-pipe structure, in which the flow guiding component 4 is disposed in the inner pipe 121. Specifically, refer to Figure 2 and Figure 3 The flow guiding assembly 4 includes a support member 41 and flow guide plates 42. The support member 41 is fixed to the central axis of the inner tube 121 and is arranged along the length of the tube. Multiple flow guide plates 42 are connected to the support member 41 at a specific angle and are arranged in a staggered pattern in the axial and radial directions, giving the airflow channel a spiral bending shape. This structure forces the gas to repeatedly collide with the surface of the flow guide plates 42 during flow, which helps to extend the flow path of the gas in the cooling tube section 12, such as... Figure 2The middle arrow indicates the airflow direction. This not only increases the gas reaction and solid deposition time, allowing for sufficient deposition within the cooling pipe section 12, but also promotes uniform airflow distribution throughout the inner wall of the cooling pipe, preventing deposits from accumulating locally on the pipe wall.

[0052] The support member 41 of the flow guiding assembly 4 adopts a central shaft structure. One end of the central shaft is fixedly connected to the wall of the inner tube 121 by means of a support ring 40. Specifically, a mounting bracket 401 is provided inside the support ring 40. This mounting bracket 401 is generally "T" shaped and has a mounting hole for inserting the central shaft. The diameter of the mounting hole is slightly larger than the diameter of the central shaft to facilitate the insertion and installation of the central shaft.

[0053] Furthermore, the guide plate 42 can be detachably mounted on the central shaft via clips or bolts to facilitate directional cleaning of localized deposition areas in the guide assembly 4. From a structural strength perspective, in a more preferred embodiment, the guide plate 42 is fixedly connected to the support member 41 by welding, thereby ensuring the overall structural strength of the guide assembly 4.

[0054] In this embodiment, the profile design of the guide plate 42 adopts an arc-shaped structure, which can be a minor arc arc, a major arc arc, or a semi-circular arc, preferably a semi-circular arc. The diameter of the guide plate 42 is slightly smaller than the inner diameter of the cooling pipe section 12, and they are arranged alternately along the axial direction according to a spiral trajectory, thereby forming a continuously bent airflow channel.

[0055] Furthermore, a baffle 402 is provided at the end of the guide plate 42 near the central axis. The length of the baffle 402 is equal to the chord of the guide plate 42. For example, for a semi-circular guide plate 42, the length of the baffle 402 is equal to the diameter of the guide plate 42. The height of the baffle 402 (i.e., the dimension of the baffle 402 along the central axis) is such that it does not exceed the interval between adjacent guide plates 42. Generally, the height of the baffle 402 is 1 / 5 to 1 / 4 of the diameter of the guide plate 42, and the baffle 402 is perpendicular to the guide plate 42. Its function is twofold: firstly, to improve the structural strength of the guide plate 42, and secondly, to further ensure that the deposits are concentrated on the inner wall of the cooling pipe section 12 or on the guide plate 42, thereby making the deposit cleaning work more focused and targeted. In a preferred embodiment, the baffle 402 is fixedly connected to the support member 41.

[0056] Furthermore, the support 41 is detachably connected to the inner wall of the inner tube 121 via a snap-fit ​​or other structure. This design allows the flow guide assembly 4 to be completely extracted from the inner tube 121 for easy cleaning of deposits.

[0057] In another specific embodiment, the flow guiding component 4 is a structure mainly composed of a support shaft and helical blades (not shown in the figure). It is similar to the combined structure of the support member 41 and the flow guiding plate 42 described above. The support shaft is connected to the inner tube, and the helical blades are arranged around the support shaft. When the airflow passes through the cooling pipe section 12, the helical blades force the gas to change its flow direction and increase the contact area between the gas and the pipe wall. This also improves the deposition efficiency by extending the residence time of the gas in the cooling pipe section 12.

[0058] Therefore, it can be seen that the design of setting the flow guiding component 4 in the cooling pipe can achieve efficient deposition control through structured airflow guidance, improve the interception efficiency of by-products in the cooling pipe section 12, and reduce the risk of pipe blockage.

[0059] The recovery device provided in this application employs a segmented temperature control design, concentrating the conversion of gaseous products discharged from the semiconductor reaction chamber 10 into solid matter and the deposition of solid matter as much as possible in a local section of the exhaust pipe. This avoids pipe blockage caused by solid matter deposition, and the recovery device is also easy to clean and saves labor. In particular, compared to wrapping the entire exhaust pipe with a heating belt, this recovery device only requires heating belts in a portion of the pipe section, thus reducing installation and maintenance costs and preventing damage to the pump caused by solid deposits. Furthermore, an optimized flow guidance scheme further ensures the targeted deposition of solid matter.

[0060] This application also provides a semiconductor device, including a semiconductor reaction chamber 10 and a recovery device as described above, the recovery device being connected to the exhaust end of the semiconductor reaction chamber 10.

[0061] It should be noted that although the above embodiments use low-pressure chemical vapor deposition equipment such as diffusion furnaces as examples, they are not limited to this. The semiconductor equipment can also be physical vapor deposition equipment, etching equipment, etc. Specifically, for physical vapor deposition equipment, during the formation of a thin film on the substrate surface, some gaseous byproducts, gaseous products, and / or unreacted gases may be generated. These gases may be converted into solids at low temperatures. By setting up the aforementioned recovery device, these solid products can be deposited as much as possible in the cooling section of the exhaust pipe, preventing solid matter from clogging the exhaust pipe and damaging the suction pump. For etching equipment, the gaseous matter discharged from the etching chamber includes gaseous products generated during etching and process gases used in the etching process, and may also carry a small amount of solid matter. By setting up a recovery device, the gaseous matter generated during the etching process can be treated, preventing exhaust pipe blockage and solid matter from entering the suction pump, thereby ensuring the stable operation of the etching equipment.

[0062] The technical solutions of this application have been described above with reference to the preferred embodiments shown in the accompanying drawings. However, it will be readily understood by those skilled in the art that the scope of protection of this application is obviously not limited to these specific embodiments. Without departing from the principles of this application, those skilled in the art can make equivalent changes or substitutions to the relevant technical features, and the technical solutions after these changes or substitutions will all fall within the scope of protection of this application.

Claims

1. A recovery device for recovering gases discharged from a semiconductor reaction chamber (10), characterized in that, include: An exhaust pipe, the inlet of which is used to connect to the exhaust end of the semiconductor reaction chamber (10), the exhaust pipe including a heating pipe section (11) and a cooling pipe section (12) detachably connected in the direction of airflow, wherein the gas is heated to maintain a gaseous state when flowing through the heating pipe section (11) and cooled to at least partially convert into a solid state when flowing through the cooling pipe section (12); An air pump (20) is provided, the air extraction end of which is detachably connected to the exhaust end of the cooling pipe section (12); A collection box (30) is connected to the exhaust end of the air pump (20).

2. The recycling device according to claim 1, characterized in that, The cooling pipe section (12) includes: The inner tube (121) forms an airflow channel; An outer tube (122) is sleeved outside the inner tube (121) and forms an annular channel (120) between the outer tube (121) and the inner tube (121), the annular channel (120) being used to introduce a cooling medium.

3. The recycling device according to claim 2, characterized in that, The inlet end (1201) of the annular channel (120) is close to the air pump (20), and the outlet end (1202) of the annular channel (120) is close to the heating tube section (11).

4. The recycling device according to any one of claims 1-3, characterized in that, The cooling pipe section (12) is provided with a flow guiding component (4), which extends along the axial direction of the cooling pipe section (12).

5. The recycling device according to claim 4, characterized in that, The flow guiding component (4) includes: Support member (41) extends axially along the cooling pipe section (12); Multiple guide plates (42) are connected to the support member (41), and the multiple guide plates (42) are arranged at intervals along the axial and radial directions of the cooling pipe section (12).

6. The recycling device according to claim 5, characterized in that, The support member (41) is detachably connected to the cooling pipe section (12).

7. The recycling device according to claim 5, characterized in that, The guide vane (42) is arc-shaped; and / or, The guide plate (42) is provided with a baffle (402) at the end near the support member (41). Along the extension direction of the support member (41), the size of the baffle (402) is smaller than the interval between adjacent guide plates (42).

8. The recycling device according to claim 1, characterized in that, The heating tube section (11) includes: The main body of the pipeline is connected between the exhaust end of the semiconductor reaction chamber (10) and the cooling pipe section (12); Heating band (111) is wrapped around the outer surface of the main pipe body.

9. The recycling device according to claim 1, characterized in that, The exhaust pipe also includes: A connecting pipe section (13) is connected between the cooling pipe section (12) and the air pump (20); the cooling pipe section (12) and the connecting pipe section (13) are detachably connected.

10. A semiconductor device, characterized in that, include: The semiconductor reaction chamber (10) and the recovery apparatus as described in any one of claims 1 to 9.

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