Image sensor device

Abstract

The image sensor device includes a pixel sensor array and an electrochromic layer stack above the pixel sensor array. An electrical input can be applied to the electrochromic layer stack to adjust the intensity of incident light received at the pixel sensors of the pixel sensor array. In this way, the electrochromic layer stack allows the intensity of incident light received at the pixel sensors of the pixel sensor array to be adjusted to a suitable illuminance level in the surrounding environment, and allows the intensity of incident light received at the pixel sensors of the pixel sensor array to adapt to changes in the illuminance level in the surrounding environment.

Description

Technical Field

[0001] This disclosure relates to an image sensor device. Background Technology

[0002] Complementary metal-oxide-semiconductor (CMOS) image sensors use photosensitive CMOS circuitry to convert light energy (such as photons) into electrical energy. Photosensitive CMOS circuitry can include photodiodes formed in a silicon substrate. When a photodiode is exposed to light, a charge (called photocurrent) is induced in it. The photodiode can be coupled to a transfer gate, which is used to sample the charge in the photodiode. Colors can be determined by placing color filters on the photosensitive CMOS circuitry. Utility Model Content

[0003] According to some embodiments, an image sensor device is provided. The image sensor device includes a pixel sensor array. The pixel sensor array includes a plurality of first pixel sensors and a plurality of second pixel sensors, each second pixel sensor including a color filter. The image sensor device also includes an electrochromic layer stack located above the first plurality of pixel sensors and the second plurality of pixel sensors.

[0004] According to some embodiments, an image sensor device is provided. The image sensor device includes a first pixel sensor array and a second pixel sensor array. The first pixel sensor array includes a plurality of first pixel sensors and a plurality of second pixel sensors, each second pixel sensor including a color filter associated with a first wavelength range of visible light. The second pixel sensor array includes a plurality of third pixel sensors, each third pixel sensor including a color filter associated with the first wavelength range of visible light, and a plurality of fourth pixel sensors, each fourth pixel sensor including a color filter associated with a second wavelength range of visible light different from the first wavelength range. The image sensor device also includes a first electrochromic layer stack over the plurality of first pixel sensors and the plurality of second pixel sensors. The image sensor device also includes a second electrochromic layer stack over the plurality of third pixel sensors and the plurality of fourth pixel sensors.

[0005] According to some embodiments, an image sensor device is provided. The image sensor device includes a pixel sensor array. The pixel sensor array includes a plurality of first pixel sensors and a plurality of second pixel sensors, each second pixel sensor including a color filter. The image sensor device also includes an electrochromic layer stack located above the first plurality of pixel sensors and the second plurality of pixel sensors. The electrochromic layer stack includes an electrochromic layer, an electrolyte layer, and an ion storage layer located between two transparent electrodes. Attached Figure Description

[0006] The various features disclosed herein can be best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that, in accordance with industry standard practice, the features are not drawn to scale. In fact, for clarity of discussion, the dimensions of the features may be arbitrarily increased or decreased.

[0007] Figure 1 This is an example schematic diagram of a portion of the image sensor device described herein;

[0008] Figures 2A to 2H This is a schematic diagram of an exemplary implementation of a pixel sensor array as described herein;

[0009] Figure 3 This is a schematic diagram of an exemplary implementation of adjusting the optical transmittance of an electrochromic layer stack based on the illuminance level in the surrounding environment.

[0010] Figures 4A to 4L This is a schematic diagram illustrating an exemplary embodiment of the image sensor device described herein;

[0011] Figures 5A to 5C This is an example schematic diagram of the image sensor device described in this article;

[0012] Figures 6A to 6H This is a schematic diagram of an exemplary implementation of a portion of the pixel sensor array described in this article;

[0013] Figures 7A to 7C This is a schematic diagram of an exemplary implementation of adjusting the optical transmittance of the electrochromic layer stack described herein;

[0014] Figures 8A to 8C This is a schematic diagram of an exemplary implementation of the current mirror circuit or a portion thereof described herein;

[0015] Figures 9A to 9B This is a schematic diagram of an exemplary implementation in which compression and decompression circuitry can be communicatively coupled to one or more pixel sensor arrays described herein;

[0016] Figure 10 This is a flowchart of an exemplary process associated with forming the image sensor device described herein.

[0017] [Symbol Explanation]

[0018] 100: Image sensor device

[0019] 102: Pixel sensor array

[0020] 102a: Pixel sensor array / Monochrome pixel sensor array

[0021] 102b: Pixel sensor array / Full-color pixel sensor array

[0022] 102c: Pixel sensor array / Monochrome pixel sensor array

[0023] 104: White pixel sensor

[0024] 106: Color Pixel Sensor

[0025] 200: Implementation Method

[0026] 202:Substrate

[0027] 204: Photodiode

[0028] 206: Isolation Structure

[0029] 208: Lining

[0030] 210: Fill layer

[0031] 212:FD node

[0032] 214: Transfer Gate

[0033] 216: Interconnection Layer

[0034] 218: Dielectric layer / First dielectric layer

[0035] 220: Metallization layer

[0036] 222: Buffer layer

[0037] 224: Isolation Grid

[0038] 226: Metal layer

[0039] 228: Dielectric layer

[0040] 230: Color Filter

[0041] 232: Buffer layer

[0042] 234, 234a, 234b, 234c: Electrochromic layer stacking

[0043] 236: Bottom transparent electrode

[0044] 238: Ion Storage Layer

[0045] 240: Electrolyte layer

[0046] 242: Electrochromic layer

[0047] 244: Top transparent electrode

[0048] 246: Buffer layer

[0049] 248: Microlenses

[0050] 250: Implementation Method

[0051] 252: Implementation Method

[0052] 254: Implementation Method

[0053] 256: Implementation Method

[0054] 258: Implementation Method

[0055] 260: Implementation Method

[0056] 262: Implementation Method

[0057] 300: Implementation Method

[0058] 302: Illuminance

[0059] 304: Incident light

[0060] 400: Implementation Method

[0061] 402: Groove

[0062] 404: Crystal Structure

[0063] 500: Image sensor device

[0064] 502: Color Pixel Sensor

[0065] 504: Color Pixel Sensor

[0066] 506: Image sensor device

[0067] 508: Image Sensor Device

[0068] 600: Implementation Method

[0069] 602: Implementation Method

[0070] 604: Implementation Method

[0071] 606: Implementation Method

[0072] 608: Implementation Method

[0073] 610: Implementation Method

[0074] 612: Implementation Method

[0075] 614: Implementation Method

[0076] 700: Implementation Method

[0077] 702: Electrical Input

[0078] 704: Electrical Input

[0079] 800: Implementation Method

[0080] 802: NMOS Current Mirror Circuit

[0081] 804: PMOS Current Mirror Circuit

[0082] 806: Constant Current Source

[0083] 808: MOSFET

[0084] 810: MOSFET

[0085] 812: Reference current source (I) REF )

[0086] 814: Image current (I) D )

[0087] 814a: Image current (I D )

[0088] 814b: Image current (I) D )

[0089] 814c: Image current (I D )

[0090] 816: MOSFET

[0091] 818: MOSFET

[0092] 820: MOSFET

[0093] 900: Implementation Method

[0094] 902: Compression Circuit

[0095] 904: Decompression circuit

[0096] 906: Image Sensor Device

[0097] 908: Input Image

[0098] 910: Preprocessing circuit

[0099] 912: Encoding Circuit

[0100] 914: Image Container

[0101] 916: Decoding Circuit

[0102] 918: Inverse mapping circuit

[0103] 920: Post-processing circuit

[0104] 922: Image Signal Processor Circuit

[0105] 924: Output Circuit

[0106] 926: Image Correction Circuit

[0107] 928: User Application Circuit

[0108] 930: Decomposition Operation

[0109] 932: Interpolation Operation

[0110] 934: R component

[0111] 936:C1 component

[0112] 938:C2C3 component

[0113] 940:C2 component

[0114] 942:C1C3 component

[0115] 944: C3 component

[0116] 946:C1C2 component

[0117] 948: Compression Operation

[0118] 1000: Process

[0119] 1010, 1020, 1030, 1040: Boxes

[0120] AA: Line

[0121] BB: Line

[0122] C1: First white / transparent component

[0123] C2: Second white / transparent component

[0124] C3: Third white / transparent component

[0125] R: Red component

[0126] V DD Drain-Drain Voltage

[0127] x: direction

[0128] y: direction

[0129] z: Direction Detailed Implementation

[0130] The following disclosure provides numerous different embodiments or examples for implementing various features of this disclosure. Specific embodiments or examples of components and configurations are described below to simplify this disclosure. Of course, these are merely examples and are not intended to be limiting. For example, forming a first feature on or above a second feature in the following description may include embodiments where the first and second features are formed in direct contact, or embodiments where an additional feature is formed between the first and second features such that the first and second features do not need to be in direct contact. Additionally, reference numerals and / or letters may be repeated in various examples throughout this disclosure. Such repetition is for simplicity and clarity and does not, in itself, define the relationship between the various embodiments and / or configurations discussed.

[0131] Furthermore, for ease of description, this disclosure uses spatially relative terms such as “below,” “under,” “lower,” “above,” “upper,” etc., to describe the relationship of an element or feature to one or more other elements or features, as illustrated in the accompanying drawings. The spatially relative terms are intended to cover not only the orientations shown in the drawings but also different orientations of the device during use or operation. For example, if the device in the figures is flipped, an element described as “below” or “under” other elements or features will be oriented as “above” other elements or features. Thus, the exemplary term “below” can encompass both above and below orientations. This device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatially relative descriptive terms used herein will be interpreted accordingly.

[0132] Complementary metal-oxide-semiconductor (CMOS) image sensor devices have a wide range of use cases, including digital cameras, surveillance cameras, night vision, and / or automotive sensing. In some use cases, CMOS image sensor devices may be exposed to varying environments with different illumination levels. For example, in automotive sensing use cases, as a car containing a CMOS image sensor moves between environments with different illumination levels, the CMOS image sensor may experience constantly changing illumination levels. This could happen, for example, when a car transitions between a tunnel and an open environment or when a car passes under a bridge. Changing illumination levels can pose challenges to optimizing the exposure intensity of the incident light received at the CMOS image sensor. For example, transitioning from a low-light environment to a high-light environment may cause the CMOS image sensor to overexpose the incident light, which could lead to loss of detail in the images and / or videos produced by the CMOS image sensor due to saturation of the pixel sensors. Another example is that the transition from an environment with a high illumination level to an environment with a low illumination level may result in the CMOS image sensor device being underexposed to the incident light. This may also cause the loss of details in the images and / or videos produced by the CMOS image sensor device due to the images and / or videos being too dark.

[0133] In some embodiments described herein, a CMOS image sensor device includes a pixel sensor array and an electrochromic layer stack above the pixel sensor array. An electrical input can be applied to the electrochromic layer stack to modulate the intensity of incident light received at the pixel sensors of the pixel sensor array. In this way, the electrochromic layer stack allows the intensity of the incident light received at the pixel sensors of the pixel sensor array to be modulated to suit the illuminance level of the surrounding environment, and allows the intensity of the incident light received at the pixel sensors of the pixel sensor array to adapt to changes in the illuminance level of the surrounding environment.

[0134] Furthermore, the pixel sensor array may include a monochrome pixel sensor array (e.g., a red pixel sensor array, a blue pixel sensor array) configured to sense a single wavelength range of visible light. This enables the CMOS image sensor device to be used in high dynamic range (HDR) automotive use cases and / or other applications relating to machine reading of objects of specific colors, which can produce full-color images and / or videos for comparison and verification with machine reading results based on monochrome images and / or videos generated by the monochrome pixel sensor array.

[0135] Figure 1 This is an example schematic diagram of a portion of the image sensor device 100 described herein. Figure 1A portion of the image sensor device 100 shown includes a pixel sensor array 102. The pixel sensor array 102 may include a monochrome pixel sensor array configured for monochrome sensing and / or machine reading (e.g., reading road signs, reading markings on vehicles). Figure 1 A top view of the pixel sensor array 102 is shown.

[0136] like Figure 1 As shown, the pixel sensor array 102 includes a plurality of pixel sensors, including white pixel sensors (or “transparent” pixel sensors) 104 and color pixel sensors 106. The white pixel sensors 104 and color pixel sensors 106 may be arranged in a grid in the xy plane (e.g., a lateral or horizontal plane) of the pixel sensor array 102. For example, the white pixel sensors 104 and color pixel sensors 106 may be arranged alternately in multiple rows along the x-direction and alternately in multiple columns along the y-direction in the image sensor device 100. However, other arrangements of the white pixel sensors 104 and color pixel sensors 106 in the pixel sensor array 102 are also within the scope of this disclosure.

[0137] In some implementations, the white pixel sensor 104 and / or the color pixel sensor 106 are square (e.g., Figure 1 (As shown in the example). In some embodiments, the white pixel sensor 104 and / or the color pixel sensor 106 include other shapes, such as rectangular, circular, octagonal, rhomboid and / or other shapes.

[0138] White pixel sensor 104 (or “transparent” pixel sensor) refers to a non-discriminating or non-filtering pixel sensor configured to sense incident light across the entire visible spectrum. White pixel sensor 104 can be used for general detection of objects in the field of view of pixel sensor array 102, such as trucks, pedestrians, obstacles, and / or backgrounds.

[0139] Color pixel sensor 106 refers to a pixel sensor that senses only a portion of the visible spectrum of incident light. Specifically, color pixel sensor 106 can be configured to sense a specific wavelength range of incident light associated with a specific color of visible light. Therefore, pixel sensor array 102 can be referred to as a monochromatic pixel sensor array. For example, color pixel sensor 106 can be configured to sense the same wavelength range associated with the red component of incident light, and thus can be referred to as a red pixel sensor. As another example, color pixel sensor 106 can be configured to sense the same wavelength range associated with the blue component of incident light, and thus can be referred to as a blue pixel sensor. As another example, color pixel sensor 106 can be configured to sense the same wavelength range associated with the green component of incident light, and thus can be referred to as a green pixel sensor. Color pixel sensor 106 can be used to detect specific types of objects in the field of view of pixel sensor array 102, such as headlights, traffic lights, road signs, and / or vehicles of a specific color.

[0140] As mentioned above, provided as an example Figure 1 Other examples may be related to Figure 1 The differences described in [the text].

[0141] Figures 2A to 2H This is a schematic diagram of an exemplary implementation of a pixel sensor array as described herein. For example, Figures 2A to 2H The figures show cross-sectional views of an exemplary embodiment of a pixel sensor array 102 of an image sensor device 100. However, Figures 2A to 2H The exemplary implementation of a portion of the pixel sensor array 102 shown herein can be used in other monochrome pixel sensor arrays described herein, such as those combined with... Figures 5A to 5C and / or Figures 6A to 6H The other monochrome pixel sensor arrays shown and described. Figures 2A to 2H It is along Figure 1 The cross-sectional view shown by line AA.

[0142] Figures 2A to 2HExemplary embodiments of a portion of the pixel sensor array 102 of the image sensor device 100 shown all include one or more electrochromic layer stacks. The electrochromic layer stacks may be located above the color pixel sensors 106 in the pixel sensor array 102 (and, in some embodiments, also above the white pixel sensors 104 in the pixel sensor array 102) to enable adjustment and / or dynamic tuning of the intensity of incident light sensed by the color pixel sensors 106, for example, based on the illuminance level in the environment of the image sensor device 100. The electrochromic layer stacks described herein include electrochromic layers in which transmittance can be varied by applying an electrical input across the electrochromic layers. Thus, depending on the magnitude (or polarity) of the electrical input, the electrochromic layers can be biased to achieve greater or less transmittance, thereby enabling adjustment and / or dynamic tuning of the intensity of incident light sensed by the color pixel sensors 106.

[0143] refer to Figure 2A An exemplary embodiment 200 of the pixel sensor array 102 of the image sensor device 100 includes a white pixel sensor 104 and an adjacent color pixel sensor 106. For example... Figure 2A As shown, the image sensor device 100 may include a substrate 202. The substrate 202 may include a semiconductor layer, a semiconductor die substrate, a semiconductor wafer, a stacked semiconductor wafer, or another type of substrate in which semiconductor pixels can be formed. In some embodiments, the substrate 202 is made of silicon (Si) (e.g., a silicon substrate), a material including silicon, a III-V compound semiconductor material such as gallium arsenide (GaAs), a silicon-on-insulator (SOI), or another type of semiconductor material capable of generating charge from photons of incident light. In some embodiments, the substrate 202 is formed of a doped material (e.g., a p-doped material or an n-doped material), such as doped silicon.

[0144] Both the white pixel sensor 104 and the color pixel sensor 106 may include a photodiode 204 contained in a substrate 202. The photodiode 204 may include multiple regions in the substrate 202 doped with various types of ions to form pn junctions or PIN junctions (e.g., junctions between p-type portions, intrinsic (or undoped) types, and n-type portions). For example, the substrate 202 may be doped with an n-type dopant to form one or more n-type regions of the photodiode 204, and the substrate 202 may be doped with a p-type dopant to form p-type regions of the photodiode 204. The photodiode 204 may be configured to absorb photons of incident light entering the substrate 202. The absorption of photons causes the photodiode 204 to accumulate charge (called photocurrent) due to the photoelectric effect. Photons may bombard the photodiode 204, which causes electron emission from the photodiode 204.

[0145] The isolation structure 206 may be located around the photodiodes 204 of the white pixel sensor 104 and the color pixel sensor 106 of the pixel sensor array 102. The isolation structure 206 may be a deep trench isolation (DTI) structure, comprising a plurality of interconnected elongated trenches extending downward into the substrate 202. The elongated trenches may extend from the rear surface of the substrate 202 opposite to the front surface of the substrate 202. Because photons enter the photodiodes 204 from the back surface of the substrate 202, the pixel sensor array 102 can be referred to as a backside illuminated (BSI) pixel sensor array. Therefore, the isolation structure 206 may be referred to as a backside DTI (BDTI) structure. Alternatively, the isolation structure 206 may include a frontside DTI (FDTI) structure extending from the front surface of the substrate 202 into the substrate.

[0146] The isolation structure 206 may include one or more layers. In other examples, the one or more layers may include a liner 208 and a filler layer 210. A portion of the liner 208 and / or a portion of the filler layer 210 may extend along the back surface of the substrate 202. Alternatively, the liner 208 and / or the filler layer 210 may be omitted from the back surface of the substrate 202.

[0147] The fill layer 210 can confine incident light around the photodiode 204 of the associated pixel sensor (e.g., the associated white pixel sensor 104, the associated color pixel sensor 106) to increase the quantum efficiency of the pixel sensor and / or reduce optical crosstalk. In some embodiments, the fill layer 210 comprises one or more dielectric materials, such as silicon oxide (SiO2). x), silicon nitride (Si x N y ), silicon carbide (SiC) x Silicon carbonitride (SiCN) and / or silicon oxynitride (SiON), etc. The substrate 208 may include silicon nitride (Si... x N y ), silicon carbide (SiC) x ), aluminum oxide (Al) x O y Such as Al2O3), tantalum oxide (Ta x O y Such as Ta2O5), hafnium oxide (HfO) x , such as HfO2) and / or another high dielectric constant (high k) dielectric material.

[0148] The photocurrent generated by the photodiode 204 (e.g., the photodiode 204 of the white pixel sensor 104, the photodiode 204 of the color pixel sensor 106) can be transferred and / or stored in associated floating diffusion (FD) nodes 212 in the substrate 202. The FD nodes 212 may include doped portions (e.g., n-doped portions, p-doped portions) of the substrate 202 configured to accumulate and store the photocurrent.

[0149] Both the white pixel sensor 104 and the color pixel sensor 106 may include a transfer gate 214. The transfer gate 214 may be located on the front surface of the substrate 202. The transfer gate 214 may be configured to direct the photoelectric current generated by the photodiode 204 to the FD node 212. For example, the transfer gate 214 of the white pixel sensor 104 may be configured to direct the photoelectric current generated by the photodiode 204 of the white pixel sensor 104 to the FD node 212 of the white pixel sensor 104. As another example, the transfer gate 214 of the color pixel sensor 106 may be configured to direct the photoelectric current generated by the photodiode 204 of the color pixel sensor 106 to the FD node 212 of the color pixel sensor 106. The transfer gate 214 can be implemented by a field effect transistor (FET), such as a planar FET, a fin FET, a nanostructure FET (e.g., a gate all around (GAA) FET, a nanowire FET, a nanosheet FET, a multi-bridge channel FET, a nanoribbon FET), and / or other types of FETs.

[0150] Interconnect layer 216 (e.g., a back end of line (BEOL) region or a rear-end region) may be located on the front side of substrate 202. Interconnect layer 216 may include one or more dielectric layers 218 and one or more metallization layers 220 included within the one or more dielectric layers 218. One or more of the metallization layers 220 may be electrically connected to portions of the pixel sensor array 102, including FD nodes 212 and / or transmission gates 214. The one or more dielectric layers 218 may include silicon oxide (SiO2). x ), silicon nitride (Si x N y ), silicon carbide (SiC) x Metallization layers 220 may be, for example, silicon carbonitride (SiCN) or silicon oxynitride (SiON). One or more metallization layers 220 may include contacts, trenches, vias, interconnects, columns, pillars, single damascene structures, and / or dual damascene structures. One or more metallization layers 220 may include tungsten (W), cobalt (Co), titanium (Ti), copper (Cu), gold (Au), silver (Ag), molybdenum (Mo), ruthenium (Ru), metal alloys, and / or other types of conductive materials.

[0151] On the back side of substrate 202, a buffer layer 222 may be included, and the buffer layer 222 may include another isolation mesh 224. The buffer layer 222 may include one or more dielectric materials, such as silicon oxide (SiO2). x ), silicon nitride (Si x N y ), silicon carbide (SiC) x Silicon carbonitride (SiCN) and / or silicon oxynitride (SiON), etc. The isolation mesh 224 may include an isolation structure (e.g., a mesh structure or mesh isolation structure) above the isolation structure 206. The isolation mesh 224 may include multiple interconnect structures formed by etching to form an interconnect structure over one or more layers. In a top view, the isolation mesh 224 has a mesh-like configuration similar to the isolation structure 206. The isolation mesh 224 may be configured to combine with the isolation structure 206 to further reduce optical interference of the pixel sensor array 102.

[0152] The isolation grid 224 may include an oxide grid, a dielectric grid, a color filter in a box (CIAB) grid, and / or a composite metal grid (CMG), etc. In some embodiments, the isolation grid 224 includes a metal layer 226 and a dielectric layer 228 on and / or above the metal layer 226. The metal layer 226 may include tungsten (W), cobalt (Co), and / or another type of metal or metal-containing material. The dielectric layer 228 may include organic materials, oxides, nitrides, and / or another type of dielectric material, such as silicon oxide (SiO2). x (For example, silicon dioxide (SiO2)) europium oxide (HfO) x europium oxide (HfSiO) x ), aluminum oxide (Al) x O y ), silicon nitride (Si x N y Zirconium oxide (ZrO) x ), magnesium oxide (MgO) x ), Yttrium oxide (Y) x O y ), tantalum oxide (Ta x O y Titanium oxide (TiO) x ), Lanthanum oxide (La) x O y Barium oxide (BaO) x ), silicon carbide (SiC), lanthanum aluminum oxide (LaAlO) x ), Strontium oxide (SrO), zirconium silicon oxide (ZrSiO) x ) and / or calcium oxide (CaO), etc.

[0153] Color filter 230 may be included in the region between the columns of isolation grid 224. Specifically, color filter 230 may be included between the columns of isolation grid 224 above the photodiode 204 of color pixel sensor 106. Color filter 230 for color pixel sensor 106 may be configured to filter incident light to allow incident light of a specific wavelength to pass to photodiode 204 of color pixel sensor 106. As described above... Figure 1As shown, the pixel sensor array 102 can be a monochrome pixel sensor array. Therefore, all color pixel sensors 106 in the pixel sensor array 102 may include the same type of color filter 230. For example, each color pixel sensor 106 in the pixel sensor array 102 may include a color filter 230 configured to filter incident light to allow incident light of a specific wavelength associated with red visible light to pass to the photodiode 204 of the color pixel sensor 106. As another example, each color pixel sensor 106 in the pixel sensor array 102 may each include a color filter 230 configured to filter incident light to allow incident light of a specific wavelength associated with green visible light to pass to the photodiode 204 of the color pixel sensor 106. As another example, the color pixel sensors 106 of the pixel sensor array 102 may each include a color filter 230 configured to filter incident light to allow incident light of a specific wavelength associated with blue visible light to pass to the photodiode 204 of the color pixel sensor 106.

[0154] Another buffer layer 232 may be included on and / or over buffer layer 222, and on and / or over color filter 230. Buffer layer 232 may include a nearly planar layer providing a nearly planar dielectric substrate, and an electrochromic layer stack 234 may be formed on the dielectric substrate. The electrochromic layer stack 234 may be formed over the pixel sensors of pixel sensor array 102, for example over white pixel sensor 104 and color pixel sensor 106. As described above, including the electrochromic layer stack 234 enables the intensity of incident light sensed by white pixel sensor 104 and color pixel sensor 106 to be adjusted and / or dynamically tuned based on the illuminance level in the environment of image sensor device 100.

[0155] The electrochromic layer stack 234 may include a bottom transparent electrode 236, an ion storage layer 238 on and / or above the bottom transparent electrode 236, an electrolyte layer 240 on and / or above the ion storage layer 238, an electrochromic layer 242 on and / or above the electrolyte layer 240, and a top transparent electrode 244 on and / or above the electrochromic layer 242. In exemplary embodiment 200, the layers of the electrochromic layer stack 234 may be formed as thin films stacked along the z-direction (e.g., vertically stacked) in the image sensor device 100.

[0156] The bottom transparent electrode 236 and the top transparent electrode 244 may each comprise one or more transparent or semi-transparent conductive materials. Examples of such materials include indium tin oxide (ITO), fluorine-doped tin dioxide (FTO), and / or ITO-coated polyethylene terephthalate (PET-ITO). The bottom transparent electrode 236 and the top transparent electrode 244 enable the application of an electrical input across the electrochromic layer stack 234 to modify the optical transmittance of the electrochromic layer stack 234.

[0157] The ion storage layer 238 may include trapping and storing ions that may migrate toward or away from the electrochromic layer 242. Therefore, the ion storage layer 238 may include one or more materials with high ion storage capacity, such as metal oxides (e.g., nickel oxide (NiO)) or conductive polymers. The ion storage layer 238 can retain ions without applying an electrical input to the electrochromic layer stack 234, thereby enabling the electrochromic layer 242 to be configured in a persistent optical transmittance state.

[0158] Electrolyte layer 240 can facilitate ion migration between ion storage layer 238 and electrochromic layer 242. Therefore, electrolyte layer 240 can be referred to as ion conduction layer or ion transport layer. Electrolyte layer 240 may include one or more ion conduction materials, including those doped with electrolytes (e.g., lithium salts, ammonium salts), polymers with ion conductivity, and / or another suitable ion conduction material.

[0159] The electrochromic layer 242 may comprise transition metal oxides, transition metals, conductive polymers, viologen, lanthanides, metal phthanlocyanines, and / or another suitable material capable of reversible oxidation to alter the optical transmittance of the electrochromic layer 242. The electrochromic layer 242 can be reversibly oxidized (e.g., based on electrical input applied to the bottom transparent electrode 236 and the top transparent electrode 244) by trapping and releasing ions (e.g., ions from the ion storage layer 238). Such materials may include tungsten oxide (WO3). x For example, WO3 or WO6), molybdenum oxide (MoO) x For example, MoO3), vanadium oxide (V x O y For example, V2O5), titanium dioxide (TiO2) x For example, TiO2), niobium oxide (Nb) x O y For example, Nb₂O₅), nickel oxide (NiO), tin oxide (SnO), and iron oxide (Fe). x O yExamples include Fe2O3), cobalt oxide (CoO), iridium hydroxide (Ir(OH)3), poly(3,4-ethylenedioxythiophene) (PDOT), polypyrrole (PPy), poly(thiophene)s (PT), polyaniline (PANI), 3-aryl-4,5-bis(pyridin-4-yl)isoxazole derivatives, metals, alloys, hydrides, sulfides and / or tellurides including metals, such as manganese (Mn), magnesium (Mg), cobalt (Co), copper (Cu), nickel (Ni), zinc (Zn), vanadium (V), chromium (Cr), iron (Fe), bismuth (Bi), antimony (Sb), gold (Au), platinum (Pt), titanium (Ti) and / or niobium (Nb).

[0160] Another buffer layer 246 may be included on the electrochromic layer stack 234, and a microlens 248 may be included on the buffer layer 246. In some embodiments, each white pixel sensor 104 and each color pixel sensor 106 includes a microlens 248. In some embodiments, two or more white pixel sensors 104 share a microlens 248, two or more color pixel sensors 106 share a microlens 248, and / or white pixel sensors 104 and color pixel sensors 106 share a microlens 248. The microlens 248 may be configured to focus incident light onto photodiodes 204 of the white pixel sensors 104 and color pixel sensors 106.

[0161] Figure 2B Another exemplary embodiment 250 showing a portion of the pixel sensor array 102 of the image sensor device 100 includes a white pixel sensor 104 and an adjacent color pixel sensor 106. (See also...) Figure 2B As shown, an exemplary embodiment 250 of a portion of the pixel sensor array 102 is similar to an exemplary embodiment 200 of a portion of the pixel sensor array 102. However, in exemplary embodiment 250, the electrochromic layer stack 234 is arranged horizontally rather than vertically. Therefore, the bottom transparent electrode 236 is laterally adjacent to the ion storage layer 238, the electrolyte layer 240 is laterally adjacent to the ion storage layer 238, the electrochromic layer 242 is laterally adjacent to the electrolyte layer 240, and the top transparent electrode 244 is laterally adjacent to the electrochromic layer 242.

[0162] Compared to Exemplary Implementation 200, the z-direction thicknesses of the bottom transparent electrode 236, ion storage layer 238, electrolyte layer 240, electrochromic layer 242, and top transparent electrode 244 can be increased respectively. The thickness of the bottom transparent electrode 236, ion storage layer 238, electrolyte layer 240, electrochromic layer 242, and top transparent electrode 244 across the entire z-direction thickness of the electrochromic layer stack 234 is also increased.

[0163] Compared to Exemplary Implementation 200, the lateral widths of the bottom transparent electrode 236, ion storage layer 238, electrolyte layer 240, electrochromic layer 242, and top transparent electrode 244 can be reduced respectively. The spans of each of the bottom transparent electrode 236, ion storage layer 238, electrolyte layer 240, electrochromic layer 242, and top transparent electrode 244 are smaller than the entire lateral width of the electrochromic layer stack 234. However, the size of the electrochromic layer 242 can be set to have a lateral width such that the electrochromic layer 242 is included above the photodiodes 204 of the white pixel sensor 104 and the color pixel sensor 106 of the pixel sensor array 102.

[0164] Figure 2C Another exemplary embodiment 252 showing a portion of the pixel sensor array 102 of the image sensor device 100 includes a white pixel sensor 104 and an adjacent color pixel sensor 106. (As shown) Figure 2C As shown, an exemplary embodiment 252 of a portion of the pixel sensor array 102 is similar to an exemplary embodiment 200 of the pixel sensor array 102. However, in exemplary embodiment 250, the electrochromic layer stack 234 is recessed into the isolation grid 224 above the photodiode 204 of the color pixel sensor 106 of the pixel sensor array 102. Therefore, the electrochromic layer stack 234 is omitted from above the photodiode 204 of the white pixel sensor 104.

[0165] Furthermore, the color filter 230 of the color pixel sensor 106 is integrated into the electrochromic layer stack 234. Specifically, the color filter 230 of the color pixel sensor 106 is integrated into the electrochromic layer 242 of the electrochromic layer stack 234. The electrochromic layer 242 can be formed of one or more materials having electrochromic properties and capable of filtering incident light of specific wavelengths, thereby enabling both color filtering and optical transmittance modulation to be achieved in the same layer. For example, the blue color filter 230 can be implemented as Prussian blue (C60000), which can switch between transparent and translucent blue. 18 Fe7N 18Electrochromic layer 242. As another example, the green color filter 230 can be implemented as a Prussian green (C3FeN3) electrochromic layer 242 that can switch between transparent and translucent green. Furthermore, integrating the color filter 230 into the electrochromic layer 242 allows the color filter 230 to be implemented using a more robust material than a standalone color filter 230, thereby increasing the service life of the color filter 230.

[0166] Figure 2D Another exemplary embodiment 254 showing a portion of the pixel sensor array 102 of the image sensor device 100 includes a white pixel sensor 104 and an adjacent color pixel sensor 106. (As shown) Figure 2D As shown, an exemplary embodiment 254 of a portion of the pixel sensor array 102 is similar to exemplary embodiment 252 of the pixel sensor array 102, wherein the electrochromic layer stack 234 is recessed in the upper isolation grid 224. However, in exemplary embodiment 254, the layers of the electrochromic layer stack 234 are arranged horizontally rather than vertically. Therefore, the bottom transparent electrode 236 is laterally adjacent to the ion storage layer 238, the electrolyte layer 240 is laterally adjacent to the ion storage layer 238, the electrochromic layer 242 is laterally adjacent to the electrolyte layer 240, and the top transparent electrode 244 is laterally adjacent to the electrochromic layer 242.

[0167] Compared to Exemplary Implementation 252, the z-direction thicknesses of the bottom transparent electrode 236, ion storage layer 238, electrolyte layer 240, electrochromic layer 242, and top transparent electrode 244 can be increased respectively. The thickness of the bottom transparent electrode 236, ion storage layer 238, electrolyte layer 240, electrochromic layer 242, and top transparent electrode 244 across the entire z-direction thickness of the electrochromic layer stack 234 is also increased.

[0168] Compared to Exemplary Implementation 252, the lateral widths of the bottom transparent electrode 236, ion storage layer 238, electrolyte layer 240, electrochromic layer 242, and top transparent electrode 244 can be reduced respectively. The span of each of the bottom transparent electrode 236, ion storage layer 238, electrolyte layer 240, electrochromic layer 242, and top transparent electrode 244 is smaller than the entire lateral width of the electrochromic layer stack 234.

[0169] Figure 2E Another exemplary embodiment 256 showing a portion of the pixel sensor array 102 of the image sensor device 100 includes a white pixel sensor 104 and an adjacent color pixel sensor 106. (As shown) Figure 2EAs shown, an exemplary embodiment 256 of a portion of the pixel sensor array 102 is similar to an exemplary embodiment 200 of a portion of the pixel sensor array 102. However, in exemplary embodiment 256, except for the electrochromic layer stack 234b located above the isolation grid 224 of the pixel sensor array 102, the electrochromic layer stack 234a is recessed in the isolation grid 224 above the photodiode 204 of the color pixel sensor 106 of the pixel sensor array 102. The electrochromic layer stack 234b above the isolation grid 224 and the electrochromic layer stack 234a recessed in the isolation grid 224 include layers stacked in the z-direction and arranged vertically in the image sensor device 100.

[0170] The combination of the electrochromic layer stack 234b above the isolation grid 224 and the electrochromic layer stack 234a recessed in the isolation grid 224 allows the optical transmittance of the white pixel sensor 104 and the color pixel sensor 106 of the pixel sensor array 102 to be adjusted or modified (e.g., using the electrochromic layer stack 234b above the isolation grid 224), and allows the operating lifetime of the color filter 230 of the color pixel sensor 106 to be increased (e.g., using the electrochromic layer stack 234a recessed in the isolation grid 224). The electrochromic layer stack 234b above the isolation grid 224 can be controlled independently relative to the electrochromic layer stack 234a recessed in the isolation grid 224. Furthermore, the electrochromic layer stack 234a recessed in the isolation grid 224 can be controlled independently or jointly.

[0171] Figure 2F Another exemplary embodiment 258 showing a portion of the pixel sensor array 102 of the image sensor device 100 includes a white pixel sensor 104 and an adjacent color pixel sensor 106. (As shown) Figure 2FAs shown, in an exemplary embodiment 258 of a portion of the pixel sensor array 102, similar to exemplary embodiment 252, the electrochromic layer stack 234a is recessed in the isolation grid 224 above the photodiode 204 of the color pixel sensor 106 of the pixel sensor array 102, and the electrochromic layer stack 234b is located above the isolation grid 224 of the pixel sensor array 102. However, in exemplary embodiment 258, the layers of the electrochromic layer stack 234a recessed in the isolation grid 224 for the color pixel sensor 106 are arranged horizontally, which is the opposite of the vertical arrangement in exemplary embodiment 256. Therefore, in the electrochromic layer stack 234a embedded in the isolation grid 224 for the color pixel sensor 106, the bottom transparent electrode 236 is laterally adjacent to the ion storage layer 238, the electrolyte layer 240 is laterally adjacent to the ion storage layer 238, the electrochromic layer 242 is laterally adjacent to the electrolyte layer 240, and the top transparent electrode 244 is laterally adjacent to the electrochromic layer 242.

[0172] Figure 2G Another exemplary embodiment 260 showing a portion of the pixel sensor array 102 of the image sensor device 100 includes a white pixel sensor 104 and an adjacent color pixel sensor 106. (As shown) Figure 2F As shown, an exemplary embodiment 260 of a portion of the pixel sensor array 102 is similar to an exemplary embodiment 252 of the same array. The electrochromic layer stack 234a is recessed in the isolation grid 224 above the photodiode 204 of the color pixel sensor 106 in the pixel sensor array 102. Furthermore, the electrochromic layer stack 234b is located above the isolation grid 224 of the pixel sensor array 102. However, in exemplary embodiment 260, the layers of the electrochromic layer stack 234b above the isolation grid 224 are arranged horizontally, which is the opposite of the vertical arrangement in exemplary embodiment 256. Therefore, in the electrochromic layer stack 234b above the isolation grid 224, the bottom transparent electrode 236 is laterally adjacent to the ion storage layer 238, the electrolyte layer 240 is laterally adjacent to the ion storage layer 238, the electrochromic layer 242 is laterally adjacent to the electrolyte layer 240, and the top transparent electrode 244 is laterally adjacent to the electrochromic layer 242.

[0173] Figure 2H Another exemplary embodiment 262 showing a portion of the pixel sensor array 102 of the image sensor device 100 includes a white pixel sensor 104 and an adjacent color pixel sensor 106. (As shown) Figure 2FAs shown, in an exemplary embodiment 262 of a portion of the pixel sensor array 102, similar to exemplary embodiment 252, the electrochromic layer stack 234a is recessed in the isolation grid 224 above the photodiode 204 of the color pixel sensor 106 of the pixel sensor array 102. Furthermore, the electrochromic layer stack 234b is positioned above the isolation grid 224 of the pixel sensor array 102. However, in exemplary embodiment 262, the layers of the electrochromic layer stack 234b above the isolation grid 224 are arranged horizontally, which is the opposite of the vertical arrangement in exemplary embodiment 256. Additionally, the layers of the electrochromic layer stack 234a embedded in the isolation grid 224 of the color pixel sensor 106 are also arranged horizontally, which is the opposite of the vertical arrangement in exemplary embodiment 256.

[0174] As mentioned above, providing Figures 2A to 2H This serves as an example. Other examples can also be related to... Figures 2A to 2H The descriptions are different.

[0175] Figure 3 This is a schematic diagram of an exemplary implementation 300 that adjusts the optical transmittance of the electrochromic layer stack 234 based on the ambient illuminance level 302. (As shown) Figure 3 As shown, the level of illuminance 302 in the surrounding environment can range from dark (e.g., as low as a few hundred lux or less in underground roads such as tunnels) to bright (e.g., as high as 1 million lux or more for outdoor environments).

[0176] The optical transmittance of the electrochromic layer stack 234 included in the pixel sensor array 102 described herein can be adjusted according to the level of illumination 302 in the surrounding environment to adjust the optical intensity of the incident light 304 received at the photodiode 204 of the pixel sensors (e.g., white pixel sensor 104, color pixel sensor 106) of the pixel sensor array 102.

[0177] As another example, if the ambient illuminance 302 is high, the optical transmittance of the electrochromic layer stack 234 included in the pixel sensor array 102 described herein can be adjusted to have low optical transmittance, such as when driving outdoors in daylight. This allows a smaller amount of incident light 304 to pass through the electrochromic layer stack 234 to reach the photodiode 204 of the pixel sensor in the pixel sensor array 102, ensuring that the intensity of the incident light 304 received at the photodiode 204 does not oversaturate the photodiode 204 and cause a loss of image detail.

[0178] The electrochromic layer stack 234 can be used to dynamically adjust for rapidly changing lighting conditions. For example, the electrochromic layer stack 234 can quickly adjust the optical transmittance to take into account the exposure of reflective surfaces and / or the intermittent exposure of light sources (trees, buildings or other objects may intermittently block sunlight).

[0179] In some embodiments, the electrochromic layer stack 234 included in the pixel sensor array 102 can be independently tuned to adjust the optical transmittance of visible and infrared light. Therefore, the electrochromic layer stack 234 can be configured to a high transmittance state for both visible and infrared light, a high transmittance state for visible light and a low transmittance state for infrared light, a low transmittance state for visible light and a high transmittance state for infrared light, or a low transmittance state for both visible and infrared light.

[0180] As mentioned above, providing Figure 3 This serves as an example. Other examples can also be related to... Figure 3 The descriptions are different.

[0181] Figures 4A to 4L This is a schematic diagram of an exemplary embodiment 400 forming the image sensor device 100 described herein. While exemplary embodiment 400 includes the pixel sensor array 102 forming the image sensor device 100 described herein, semiconductor processing techniques can be used to form another pixel sensor array described herein, for example, by combining... Figures 5A to 5C and / or Figures 6A to 6H The image sensor device shown and described includes one or more of pixel sensor arrays 102a, 102b, and / or 102c, as well as other examples. In some embodiments, combined with Figures 4A to 4L One or more of the described semiconductor processing operations may be performed using one or more semiconductor processing tools, such as deposition tools, exposure tools, development tools, etching tools, planarization tools, electroplating tools, ion implantation tools, and / or bonding tools.

[0182] refer to Figure 4A In the exemplary embodiment 400, one or more semiconductor processing operations can be performed in conjunction with the substrate 202. The substrate 202 can be provided as a semiconductor wafer or another type of semiconductor workpiece.

[0183] like Figure 4BAs shown, multiple regions of substrate 202 may be doped to form one or more photodiodes 204 of white pixel sensors 104 and / or may be doped to form one or more photodiodes 204 of color pixel sensors 106. Ion implantation tools may be used to dope substrate 202 to form one or more n-type regions and / or one or more p-type regions of photodiode 204. Ion implantation tools may be used to implant p+ ions into substrate 202 to form p-type regions and / or to implant n+ ions into substrate 202 to form n-type regions.

[0184] like Figure 4B As further shown, one or more regions of the substrate 202 may be doped to form FD nodes 212 of the white pixel sensor 104 and / or may be doped to form FD nodes 212 of the color pixel sensor 106. In some embodiments, FD nodes 212 may be formed by implanting n+ ions into the substrate 202 using an ion implantation tool.

[0185] like Figure 4C As shown, the transmission gate 214 of the white pixel sensor 104 and the transmission gate 214 of the color pixel sensor 106 can be formed above the front surface of the substrate 202. In some embodiments, a gate dielectric layer can be formed on the front surface of the substrate 202, and the transmission gate 214 can be formed on and / or on the gate dielectric layer. In some embodiments, a deposition tool is used to deposit the transmission gate 214. In some embodiments, the transmission gate 214 can comprise polysilicon doped with one or more types of dopants. In some embodiments, the transmission gate 214 can comprise a high-k dielectric and a metallic material (e.g., a metal gate (MG)).

[0186] like Figure 4D As shown, interconnect layer 216 can be formed above the front surface of substrate 202. Forming interconnect layer 216 may include forming one or more dielectric layers 218 and forming one or more metallization layers 220 in the one or more dielectric layers 218. For example, a first dielectric layer 218 may be formed and patterned to form a groove in the first dielectric layer 218, and a first metallization layer 220 may be formed in the groove in the first dielectric layer 218. Subsequent layers of interconnect layer 216 can be formed in a similar manner.

[0187] The deposition tools can be used to deposit the dielectric layer 218 using physical vapor deposition (PVD), atomic layer deposition (ALD), chemical vapor deposition (CVD), oxidation techniques, and / or other methods. In some embodiments, after depositing the dielectric layer 218, a planarization tool can be used to planarize the dielectric layer 218.

[0188] In some embodiments, the pattern in the photoresist layer is used to etch the dielectric layer 218 to form grooves in the dielectric layer 218 for the metallization layer 220. In these embodiments, a deposition tool can be used to form the photoresist layer on the dielectric layer 218. An exposure tool can be used to expose the photoresist layer to a radiation source to pattern the photoresist layer. A development tool can be used to develop and remove portions of the photoresist layer to expose the pattern. An etching tool can be used to etch the dielectric layer 218 based on the pattern to form the grooves. In some embodiments, the etching operation includes dry etching operations (e.g., plasma-based etching operations, gas-based etching operations), wet chemical etching operations, and / or another type of etching operation. In some embodiments, a photoresist removal tool can be used to remove the remaining portions of the photoresist layer (e.g., using a chemical stripper, plasma ashing, and / or another technique). In some embodiments, a hard mask layer is used as an alternative technique to pattern-based etching of the dielectric layer 218.

[0189] Deposition tools can be used to deposit the metallization layer 220 using PVD, ALD, CVD, electroplating (e.g., electrochemical electroplating) techniques and / or another type of deposition technique. In some embodiments, after depositing the metallization layer 220, a planarization tool can be used to planarize the metallization layer 220. In some embodiments, a seed layer is first deposited, and the metallization layer 220 is formed on the seed layer. In some embodiments, one or more substrates (e.g., barrier layers, adhesion layers) are first deposited, and the metallization layer 220 is formed on one or more substrates.

[0190] like Figure 4E As shown, a back-side processing can be performed on the back surface of substrate 202. A recess 402 can be formed from the back surface of substrate 202 to substrate 202. In some embodiments, a pattern in the photoresist layer is used to pattern the recess 402. The recess 402 may include a plurality of interconnected trenches extending into substrate 202 to form a mesh around photodiode 204, and in some embodiments, a mesh is formed around FD node 212.

[0191] A photoresist layer can be formed on the back surface of substrate 202 using a deposition tool. An exposure tool can be used to expose the photoresist layer to a radiation source to pattern the photoresist layer. A development tool can be used to develop and remove a portion of the photoresist layer to expose the pattern. An etching tool can be used to etch substrate 202 based on the pattern to form recess 402. In some embodiments, the etching operation includes plasma etching, wet chemical etching, and / or another type of etching operation. In some embodiments, a photoresist removal tool can be used to remove the remaining portion of the photoresist layer (e.g., using a chemical stripper, plasma ashing, and / or another technique). Alternatively, the pattern in the photoresist layer can be used to transfer the pattern to a hard mask layer used to form recess 402.

[0192] In some embodiments, a cyclic etching technique is used to form the groove 402 to have a relatively high aspect ratio between the depth and lateral width of the groove 402. For example, a cyclic etching technique is used to form the groove 402 such that the groove 402 has an aspect ratio of at least about 8:1 or greater between the depth and lateral width of the groove 402. However, other values ​​for the aspect ratio of the groove 402 are also within the scope of this disclosure. The cyclic etching technique may include multiple deposition and etching cycles performed using a protective liner to minimize lateral etching. For example, the deposition and etching cycle may include etching the groove 402 in the substrate 202 to a first depth, forming a protective liner on the sidewalls and bottom surface of the groove 402, etching the protective liner to remove the protective liner from the bottom surface of the groove 402, and etching the bottom of the groove 402 to increase the depth of the groove 402 to a second depth, while the protective liner protects the sidewalls of the groove 402 from lateral etching.

[0193] like Figure 4F As shown, the recess 402 is filled with one or more substrates 208 and fillers 210 to form an isolation structure 206 within the recess 402. The isolation structure 206 may extend into the substrate 202 and laterally surround the photodiode 204. Figure 4F As further shown, in some embodiments, the material of the liner 208 and / or the material of the filler layer 210 may be deposited on the back surface of the substrate 202.

[0194] Deposition tools can be used to deposit one or more liner layers 208 in a groove 402 using conformal deposition techniques (such as ALD or CVD). One or more liner layers 208 can be conformally deposited on the sidewalls and bottom surface of the groove 402 such that the one or more liner layers 208 conform to the contour of the groove 402. Deposition tools can be used to deposit a filler layer 210 using PVD, ALD, CVD, oxidation, and / or another type of deposition technique.

[0195] In some embodiments, a planarization tool may be used to perform a planarization operation (e.g., chemical mechanical planarization, CMP) to planarize the back side of substrate 202 to remove one or more liner layers 208 and / or filler layers 210 from the back side surface of substrate 202. In some embodiments, the planarization operation may be omitted (or stopped before removing one or more liner layers 208 and / or filler layers 210 from the back side surface of substrate 202), such that one or more liner layers 208 and / or filler layers 210 remain on the back side surface of substrate 202.

[0196] like Figure 4G As shown, an isolation mesh 224 can be formed above the back surface of the substrate 202. The isolation mesh 224 can be formed above the isolation structure 206 such that the isolation mesh 224 conforms to the top view shape of the isolation structure 206. Deposition tools can be used to deposit layers of the isolation mesh 224 using PVD, ALD, CVD, oxidation, plating techniques (e.g., electroplating, electrochemical plating) and / or other suitable deposition techniques. In some embodiments, a metal layer 226 is deposited, and a dielectric layer 228 is deposited on the metal layer 226. A patterned mask layer can be formed above the dielectric layer 228 and used to etch the metal layer 226 and the dielectric layer 228 to form the isolation mesh 224.

[0197] like Figure 4H As shown, a color filter 230 can be formed between the isolation grids 224 above the photodiodes 204 of the color pixel sensor 106. Furthermore, a buffer layer 222 can be formed in the remaining area between the isolation grids 224. In some embodiments, the color filter 230 is formed before the buffer layer 222 is formed. In some embodiments, the buffer layer 222 is formed before the color filter 230 is formed, and the buffer layer 222 is etched to remove a portion of the buffer layer 222 located above the photodiodes 204 of the color pixel sensor 106. The color filter 230 can then be formed above the photodiodes 204 of the color pixel sensor 106.

[0198] Deposition tools can each use PVD, ALD, CVD, oxidation, and / or another suitable deposition technique to deposit the buffer layer 222 and the color filter 230. In some implementations, the buffer layer 222 and / or the color filter 230 are formed over the isolation grid 224. In these embodiments, planarization tools can be used to perform planarization operations (e.g., CMP operations) to planarize the buffer layer 222 and / or the color filter 230. The top surfaces of the buffer layer 222, the color filter 230, and / or the isolation grid 224 can be approximately coplanar after the planarization operation.

[0199] like Figure 4I As shown, buffer layer 232 may be formed on and / or on buffer layer 222. Deposition tools may be used to deposit buffer layer 232 using PVD, ALD, CVD, oxidation, and / or another suitable deposition technique. In these embodiments, planarization tools may be used to perform planarization operations (e.g., CMP operations) to planarize buffer layer 232.

[0200] like Figure 4J As shown, an electrochromic layer stack 234 is provided above a buffer layer 232. The electrochromic layer stack 234 is provided such that it is located above the photodiode 204 of the white pixel sensor 104 and / or the photodiode 204 of the color pixel sensor 106. Alternatively, multiple electrochromic layer stacks 234 are disposed between isolation grids 224 above the photodiodes 204 of the color pixel sensor 106, and the color filter 230 of the color pixel sensor 106 is integrated into the electrochromic layer 242 of the electrochromic layer stack 234. Alternatively, in addition to the electrochromic layer stack 234 disposed above the buffer layer 232, multiple electrochromic layer stacks 234 are disposed between isolation grids 224 above the photodiodes 204 of the color pixel sensor 106.

[0201] In some embodiments, the electrochromic layer stack 234 is formed before it is disposed on the buffer layer 232 (or between the isolation grids 224). In these embodiments, the electrochromic layer stack 234 is formed in a separate process, and after fabrication is complete, it is placed on the pixel sensor array 102. The electrochromic layer stack 234 may be provided as a vertically stacked layer (e.g., stacked along the z-direction), as in, for example, in embodiments 200, 252, 256, 258, and / or 260. Alternatively and / or as an alternative, the electrochromic layer stack 234 may be provided as a horizontally configured layer, as in, for example, in embodiments 250, 254, 258, 260, and / or 262.

[0202] In some embodiments, the electrochromic layer stack 234 is formed on the buffer layer 232 (or between the isolation meshes 224). For example, a bottom transparent electrode 236 may be disposed, deposited, or placed on, for example, the buffer layer 232, on the back surface of the substrate 202. An ion storage layer 238 may be disposed, deposited, or placed on the bottom transparent electrode 236. An electrolyte layer 240 may be disposed, deposited, or placed on the ion storage layer 238. An electrochromic layer 242 may be disposed, deposited, or placed on the electrolyte layer 240. A top transparent electrode 244 may be disposed, deposited, or placed on the electrochromic layer 242.

[0203] like Figure 4K As shown, the electrochromic layer 242 can be formed with a specific crystal structure 404. In some embodiments, the electrochromic layer 242 is formed with a specific crystal structure 404 to reduce or prolong the decay of the electrochromic layer 242, which can increase the working lifetime of the electrochromic layer 242. For example, the electrochromic layer 242 can be formed from a material in which the bonds between the atoms of the material have high degrees of freedom and high bond strength. As an example, the electrochromic layer 242 can be formed from WO6 tungsten oxide, such that the crystal structure 404 is an octahedral structure, in which oxygen and tungsten are bonded together by covalent bonds (e.g., double bonds such as W=O=W). The bonds of WO6 tungsten oxide have strong resistance to bond breakage, thereby prolonging the lifetime and reducing the decay rate over time. However, other higher-order crystal structures 404 of the electrochromic layer 242 are also within the scope of this disclosure.

[0204] like Figure 4L As shown, another buffer layer 246 is formed above the electrochromic layer stack 234, and microlenses 248 may be formed or disposed on the buffer layer 246. Deposition tools may be used to deposit the buffer layer 246 using PVD, ALD, CVD, oxidation, and / or another suitable deposition technique. In these embodiments, planarization tools may be used to perform planarization operations (e.g., CMP operations) to planarize the buffer layer 246.

[0205] As mentioned above, providing Figures 4A to 4L This serves as an example. Other examples can also be related to... Figures 4A to 4L The descriptions are different.

[0206] Figures 5A to 5C This is an example schematic diagram of the image sensor device described in this article. (Combined with...) Figures 5A to 5C The various exemplary image sensor devices shown and described include multiple pixel sensor arrays, including at least one monochrome pixel sensor array. For example, combined with Figures 5A to 5C The various exemplary image sensor devices shown and described include at least one such combination Figure 1 and / or Figures 2A to 2H One or more pixel sensor arrays 102 are shown and described in the diagram. The monochrome pixel sensor array may be accompanied by other monochrome pixel sensor arrays to facilitate monochrome sensing and / or machine readout of multiple monochrome elements, and / or may be accompanied by an RGB pixel sensor array (or another type of full-color pixel sensor array). Figures 5A to 5C The monochrome pixel sensor array included in the exemplary image sensor device shown and described can be used to configure a monochrome pixel sensor array for monochrome sensing and / or machine reading (e.g., reading road signs, reading markings on vehicles). In embodiments that include a panchromatic pixel sensor array, the panchromatic pixel sensor can be used to compare, verify, and / or enhance the monochrome sensing and / or machine reading output from the monochrome pixel sensor array.

[0207] Figure 5A An exemplary image sensor device 500 is shown, including a monochrome pixel sensor array 102a and a full-color pixel sensor array 102b. The monochrome pixel sensor array 102a and the full-color pixel sensor array 102b are independently controllable and connected to independent control circuitry. This allows the monochrome pixel sensor array 102a and the full-color pixel sensor array 102b to generate independent outputs based on incident light.

[0208] Monochrome pixel sensor array 102a is similar to a combination Figure 1 The pixel sensor array 102 shown and described may include a plurality of white pixel sensors 104 and a plurality of color pixel sensors 106 (e.g., single-color / monochromatic pixel sensors). The single-color pixel sensor array 102a also includes one or more electrochromic layer stacks 234, which can be configured according to... Figures 2A to 2H One or more of the exemplary embodiments shown and described are arranged to form an arrangement.

[0209] The full-color pixel sensor array 102b includes multiple color pixel sensors, including color pixel sensor 106, color pixel sensor 502, and color pixel sensor 504. The color pixel sensors 106, 502, and 504 can be arranged in a grid in the xy plane of the pixel sensor array 102b.

[0210] In some embodiments, color pixel sensor 106 is a red pixel sensor (e.g., in monochrome pixel sensor array 102a and panchromatic pixel sensor array 102b), color pixel sensor 502 is a green pixel sensor, and color pixel sensor 504 is a blue pixel sensor. In some embodiments, color pixel sensor 106 is a color filter pixel sensor (e.g., in monochrome pixel sensor array 102a and panchromatic pixel sensor array 102b), color pixel sensor 502 is a blue pixel sensor, and color pixel sensor 504 is a red pixel sensor. In some embodiments, color pixel sensor 106 is a blue pixel sensor (e.g., in monochrome pixel sensor array 102a and panchromatic pixel sensor array 102b), color pixel sensor 502 is a red pixel sensor, and color pixel sensor 504 is a green pixel sensor.

[0211] In some embodiments, color pixel sensors 106, 502, and 504 may include another combination of colors, such as cyan, magenta, and yellow (CMYK) pixel sensors.

[0212] Figure 5B An exemplary image sensor device 506 is shown, including multiple monochrome pixel sensor arrays, including monochrome pixel sensor array 102a and monochrome pixel sensor array 102c. Monochrome pixel sensor array 102a and monochrome pixel sensor array 102c are independently controllable and connected to independent control circuitry. This enables monochrome pixel sensor array 102a and monochrome pixel sensor array 102c to generate independent outputs based on incident light.

[0213] Both monochrome pixel sensor array 102a and monochrome pixel sensor array 102c are similar to a combination Figure 1A pixel sensor array 102 is shown and described, and may include a plurality of white pixel sensors 104 and a plurality of color pixel sensors 106 (e.g., single-color / monochromatic pixel sensors). However, the single-color pixel sensor arrays 102a and 102c include different types of color pixel sensors. For example, the single-color pixel sensor array 102a may include color pixel sensors 106, and the single-color pixel sensor array 102c may include color pixel sensors 502. In some embodiments, color pixel sensors 106 may include red pixel sensors, and color pixel sensors 502 may include blue pixel sensors. In some embodiments, color pixel sensors 106 may include blue pixel sensors, and color pixel sensors 502 may include green pixel sensors. In some embodiments, color pixel sensors 106 may include green pixel sensors, and color pixel sensors 502 may include red pixel sensors. Other combinations of color pixel sensors are within the scope of this disclosure.

[0214] Monochrome pixel sensor array 102a and monochrome pixel sensor array 102c each include one or more electrochromic layer stacks 234, which can be combined Figures 2A to 2H One or more of the exemplary embodiments shown and described are arranged to form an arrangement.

[0215] Figure 5C An exemplary image sensor device 508 is shown, comprising a plurality of monochrome pixel sensor arrays 102a, 102c, and 102b. The monochrome pixel sensor arrays 102a, 102c, and 102b are independently controllable and connected to independent control circuitry. This enables the monochrome pixel sensor arrays 102a and 102c to generate independent outputs based on incident light, and also enables the panchromatic pixel sensor array 102b to generate independent outputs based on incident light.

[0216] As mentioned above, providing Figures 5A to 5C This serves as an example. Other examples can also be related to... Figures 5A to 5C The descriptions are different.

[0217] Figures 6A to 6H This is a schematic diagram illustrating an exemplary implementation of a portion of the pixel sensor array 102b described herein. For example, Figures 6A to 6H The diagram shows cross-sectional views of exemplary implementations of a portion of a pixel sensor array 102b, which may be included in image sensor device 500, image sensor device 508, and / or another image sensor device. Figures 6A to 6H It is along Figure 5A and Figure 5C The cross-sectional view shown by line BB in the figure.

[0218] Figure 6A An exemplary embodiment 600 is shown, comprising a portion of a pixel sensor array 102a including color pixel sensors 106, 502, and 504 (not shown). For example... Figure 6A As shown, an exemplary implementation 600 of a portion of the pixel sensor array 102b is similar to... Figure 2A An exemplary embodiment 200 of a portion of the pixel sensor array 102 includes a color filter 230 included on top of a photodiode 204 for color pixel sensors 106, 502, and 504, and an electrochromic layer stack 234 included on top of the color filter 230. Color pixel sensor 106 may have a first-type color filter 230 (e.g., a red filter), color pixel sensor 502 may have a second-type color filter 230 (e.g., a green filter), and color pixel sensor 504 may have a third-type color filter 230 (e.g., a blue filter).

[0219] Figure 6B Another exemplary embodiment 602 is shown, comprising a portion of a pixel sensor array 102b including color pixel sensors 106, 502, and 504 (not shown). For example... Figure 6B As shown, an exemplary embodiment 602 of a portion of the pixel sensor array 102b is similar to an exemplary embodiment 600 of a portion of the pixel sensor array 102b. However, in exemplary embodiment 602, the electrochromic layer stack 234 is arranged horizontally rather than vertically. Therefore, the bottom transparent electrode 236 is laterally adjacent to the ion storage layer 238, the electrolyte layer 240 is laterally adjacent to the ion storage layer 238, the electrochromic layer 242 is laterally adjacent to the electrolyte layer 240, and the top transparent electrode 244 is laterally adjacent to the electrochromic layer 242.

[0220] Figure 6C Another exemplary embodiment 604 is shown, comprising a portion of a pixel sensor array 102b including color pixel sensors 106, 502, and 504 (not shown). Figure 6CAs shown, an exemplary embodiment 604 of a portion of the pixel sensor array 102b is similar to an exemplary embodiment 600 of a portion of the pixel sensor array 102b. However, in exemplary embodiment 604, the electrochromic layer stack 234 is recessed into the isolation grid 224 above the photodiodes 204 of the color pixel sensors 106, 502, and 504 of the pixel sensor array 102b. Furthermore, the color filters 230 of the color pixel sensors 106, 502, and 504 are integrated into the electrochromic layer stack 234.

[0221] Figure 6D Another exemplary embodiment 606 is shown, comprising a portion of a pixel sensor array 102b including color pixel sensors 106, 502, and 504 (not shown). Figure 6D As shown, in an exemplary embodiment 606 of a portion of the pixel sensor array 102b, similar to an exemplary embodiment 600, the electrochromic layer stack 234 is recessed in the isolation grid 224 above the photodiodes 204 of the color pixel sensors 106, 502, and 504 of the pixel sensor array 102b. However, in exemplary embodiment 606, the layers of the electrochromic layer stack 234 are arranged horizontally rather than vertically.

[0222] Figure 6E Another exemplary embodiment 608 is shown, comprising a portion of a pixel sensor array 102b including color pixel sensors 106, 502, and 504 (not shown). For example... Figure 6E As shown, an exemplary embodiment 608 of a portion of the pixel sensor array 102b is similar to an exemplary embodiment 600 of a portion of the pixel sensor array 102b. However, in exemplary embodiment 608, except for the electrochromic layer stack 234c located above the isolation grid 224 of the pixel sensor array 102, the electrochromic layer stacks 234a and 234b are recessed in the isolation grid 224 above the photodiode 204 of the color pixel sensor 106 of the pixel sensor array 102. The electrochromic layer stack 234c above the isolation grid 224 and the electrochromic layer stacks 234a and 234b recessed in the isolation grid 224 include layers stacked in the z-direction and arranged vertically in the image sensor device 100.

[0223] Figure 6FAnother exemplary embodiment 610 is shown, comprising a portion of a pixel sensor array 102b including color pixel sensors 106, 502, and 504 (not shown). For example... Figure 6F As shown, an exemplary embodiment 610 of a portion of the pixel sensor array 102b is similar to an exemplary embodiment 608 of the same array. Electrochromic layer stacks 234a and 234b are recessed in an isolation grid 224 above the photodiodes 204 of the color pixel sensors 106, 502, and 504 of the pixel sensor array 102. Furthermore, an electrochromic layer stack 234c is positioned above the isolation grid 224 of the pixel sensor array 102. However, in exemplary embodiment 610, the layers of the electrochromic layer stacks 234a and 234b embedded in the isolation grid 224 for the color pixel sensors 106, 502, and 504 are arranged horizontally, which is the opposite of the vertical arrangement in exemplary embodiment 608.

[0224] Figure 6G Another exemplary embodiment 612 is shown, comprising a portion of a pixel sensor array 102b including color pixel sensors 106, 502, and 504 (not shown). Figure 6G As shown, an exemplary embodiment 612 of a portion of the pixel sensor array 102b is similar to an exemplary embodiment 608 of the same array. The electrochromic layer stacks 234a and 234b are recessed in the isolation grid 224 above the photodiodes 204 of the color pixel sensors 106, 502, and 504 of the pixel sensor array 102. Furthermore, the electrochromic layer stack 234c is located above the isolation grid 224 of the pixel sensor array 102. However, in exemplary embodiment 612, the layers of the electrochromic layer stack 234c above the isolation grid 224 are arranged horizontally, which is the opposite of the vertical arrangement in exemplary embodiment 608.

[0225] Figure 6H Another exemplary embodiment 614 is shown, comprising a portion of a pixel sensor array 102b including color pixel sensors 106, 502, and 504 (not shown). For example... Figure 6GAs shown, an exemplary embodiment 614 of a portion of the pixel sensor array 102b is similar to an exemplary embodiment 608 of the same array. The electrochromic layer stacks 234a and 234b are recessed in the isolation grid 224 above the photodiodes 204 of the color pixel sensors 106, 502, and 504 of the pixel sensor array 102. Furthermore, the electrochromic layer stack 234c is located above the isolation grid 224 of the pixel sensor array 102. However, in exemplary embodiment 614, the layers of the electrochromic layer stack 234c above the isolation grid 224 are arranged horizontally, which is the opposite of the vertical arrangement in exemplary embodiment 608. Furthermore, the electrochromic layer stacks 234a and 234b embedded in the isolation grid 224 for color pixel sensors 106, 502 and 504 are arranged horizontally, which is the opposite of the vertical arrangement in exemplary embodiment 608.

[0226] As mentioned above, providing Figures 6A to 6H This serves as an example. Other examples can also be related to... Figures 6A to 6H The descriptions are different.

[0227] Figures 7A to 7C This is a schematic diagram of an exemplary embodiment 700 for adjusting the optical transmittance of the electrochromic layer stack 234 described herein. Figure 7A As shown, an electrical input 702 (e.g., voltage, current) can be applied to the bottom transparent electrode 236 and the top transparent electrode 244. Figure 7B As shown, electrical input 702 causes ions from ion storage layer 238 to be transported via electrolyte layer 240 to electrochromic layer 242. The ions are retained in electrochromic layer 242, thereby reducing the transparency of electrochromic layer 242, which in turn reduces the optical transmittance of electrochromic layer 242. Figure 7C As shown, another electrical input 704 (e.g., an electrical input of opposite polarity) causes ions from the electrochromic layer 242 to be transported from the electrochromic layer 242 to the ion storage layer 238 via the electrolyte layer 240. Therefore, ions are removed from the electrochromic layer 242, thereby increasing the transparency of the electrochromic layer 242, which in turn increases the optical transmittance of the electrochromic layer 242.

[0228] As mentioned above, providing Figures 7A to 7C This serves as an example. Other examples can also be related to... Figures 7A to 7C The descriptions are different.

[0229] Figures 8A to 8C This is a schematic diagram of an exemplary implementation 800 of the current mirror circuit or a portion thereof described herein. (In conjunction with...) Figures 8A to 8CThe constant current source shown and described can be used to provide electrical input to the electrochromic layer stack 234 described herein. Combined with Figures 8A to 8C The constant current source shown and described enables the supply of a constant (or near-constant) power current to the electrochromic layer stack 234, particularly in battery-powered devices where the power supply voltage may decrease over time as the battery is depleted. This stabilizes the operation of the electrochromic layer stack 234 and extends its operational lifespan.

[0230] Figure 8A This illustrates an n-type metal-oxide-semiconductor (NMOS) current mirror circuit 802 with a constant current source. Figure 8B This illustrates a p-type metal-oxide-semiconductor (PMOS) current mirror circuit 804 with a constant current source. Figure 8C A constant current source 806 is shown, which includes an NMOS current mirror circuit 802 and a PMOS current mirror circuit 804. The NMOS current mirror circuit 802 and the PMOS current mirror circuit 804 enable the constant power supply current generated by the constant current source 806 to be consistently and equally mirrored or replicated onto the electrochromic layer stack 234.

[0231] like Figure 8A As shown, the NMOS current mirror circuit 802 includes multiple metal-oxide-semiconductor field-effect transistors (MOSFETs) 808 and MOSFET 810, which are NMOS transistors. MOSFETs 808 and MOSFET 810 are gate-connected, and the gates of MOSFETs 808 and MOSFET 810 are also connected to the drain of MOSFET 808. The drain of MOSFET 808 is connected to a reference current source (I0). REF )812, and provides a mirror current (I) from the drain to the source of MOSFET810. D )814. Drain-source voltage (V) of MOSFET808 and MOSFET810 ds () is greater than the gate-source voltage (V) applied to MOSFET808 and MOSFET810 gs Subtract the threshold voltages (V) of MOSFET808 and MOSFET810 t (For example, V) ds >V gs -V t This allows MOSFET808 and MOSFET810 to operate in saturation mode.

[0232] If MOSFET808 and MOSFET810 are matched transistors, then the reference current source (I) REF )812 and mirror current (ID )814 are approximately equal. In other words:

[0233]

[0234] W REF Where L is the width of the MOSFET808. REF It is the length of the MOSFET808. It is the width of the MOSFET810. That is the length of the MOSFET810. If... and If they are approximately equal, then MOSFET808 and MOSFET810 are matched, and the mirror current (I) D )814 is approximately equal to the reference current source (I REF )812. This makes the reference current source (I REF )812 can be mirrored from MOSFET808 or copied to MOSFET810.

[0235] like Figure 8B As shown, the PMOS current mirror circuit 804 includes multiple MOSFETs 816 and MOSFETs 818, which are PMOS transistors. MOSFETs 816 and MOSFETs 818 are gate-connected, and the gates of MOSFETs 816 and 818 are also connected to the drain of MOSFET 816. The source of MOSFET 816 is connected to the drain-drain voltage (V). DD ), making the reference current source (I) REF The current flows from the source to the drain of the MOSFET 812. The mirror current (Id) is... D The 814 provides power from the source to the drain of the MOSFET 816. The drain-drain voltages (V) of MOSFET 816 and MOSFET 818 are... DD ) and source-gain voltage (V sg The reference current source (I) is equal. If MOSFET816 and MOSFET818 are matched transistors, then the reference current source (I) is equal. REF )812 and mirror current (I D )814 are approximately equal.

[0236] like Figure 8C As shown, the NMOS current mirror circuit 802 and the PMOS current mirror circuit 804 can be coupled through the MOSFET 820. This allows the reference current source (I... REF The 812 can mirror across multiple MOSFETs, including the MOSFET810 (mirror current (I)). D 814a), MOSFET816 and MOSFET820 (mirror current (I)D )814b), and / or MOSFET818 (mirror current (I) D )814c), etc. In some implementations, the mirror current (I) D )814c can be provided as an electrical input 702 to the electrochromic layer stack 234.

[0237] As mentioned above, providing Figures 8A to 8C This serves as an example. Other examples can also be related to... Figures 8A to 8C The descriptions are different.

[0238] Figures 9A to 9B This is a schematic diagram of an exemplary implementation 900 in which compression circuitry 902 and decompression circuitry 904 are communicatively (e.g., electrically, optically) coupled to one or more pixel sensor arrays described herein. For example, compression circuitry 902 and decompression circuitry 904 may be communicatively coupled to image sensor device 906 (e.g., image sensor device 100, image sensor device 500, image sensor device 506, image sensor device 508), including monochrome pixel sensor arrays 102, 102a, and / or 102c, and / or panchromatic pixel sensor array 102b, etc. Compression circuitry 902 and decompression circuitry 904 may be integrated into the image sensor device, may be included in a separate compression / decompression device, and / or may be integrated into another semiconductor device.

[0239] refer to Figure 9A The image sensor device 906 can provide an input image 908 (or input video) to the compression circuit 902. Compared to other compression techniques such as piecewise linear compression, the compression circuit 902 (e.g., an image data compression circuit) can compress the input image 908 in a highly efficient and highly parallelized manner. To parallelize the compression of the input image 908, the compression circuit 902 includes a preprocessing circuit 910 and an encoding circuit 912, wherein the preprocessing circuit 910 decomposes the input image 908 into sub-images in parallel, and the encoding circuit 912 compresses the data of the sub-images in parallel and maps them to the image container 914.

[0240] Similarly, decompression circuit 904 (e.g., image data decompression circuit) can decompress the images stored in image container 914 in a highly efficient and highly parallel manner. Decompression circuit 904 may include decoding circuit 916, inverse mapping circuit 918, and post-processing circuit 920, wherein post-processing circuit 920 converts the compressed data of the images stored in image container 914 back to the raw data of input image 908. The raw data can be provided to downstream processing circuits, such as image signal processor (ISP) circuit 922, output circuit 924, image correction circuit 926, and / or user application circuit 928.

[0241] Figure 9B A detailed example is shown of a compression operation performed by compression circuit 902 on a red monochrome image generated by monochrome pixel sensor arrays 102, 102a, and / or 102c of image sensor device 906. However, compression can be performed on other types of monochrome images. Figure 9B The described operation.

[0242] like Figure 9B As shown, the input image 908 is provided to the preprocessing circuit 910, which performs a parallel decomposition operation 930 to decompose the input image 908 into four (4) image components: R component (red component), C1 component (first white / transparent component), C2 component (second white / transparent component), and C3 component (third white / transparent component). The R component is generated by the color pixel sensor 106 of the monochrome pixel sensor array, and the C1, C2, and C3 components are generated by the white pixel sensor 104 of the monochrome pixel sensor array. Each component corresponds to one-quarter (1 / 4) of the original resolution of the input image 908. Figure 9B As further shown, a parallel interpolation operation 932 is performed by the preprocessing circuit 910, which generates additional interpolated components from components C1, C2, and C3. The output of the interpolation operation 932 includes component R 934, component C1 936, component C2C3 938, component C2 940, component C1C3 942, component C3 944, and component C1C2 946. Components 934 to 946 are provided to the encoding circuit 912, which performs a parallel compression operation 948 to map and compress components 934 to 946. The compressed components 934 to 946 are then stored in the image container 914.

[0243] As mentioned above, providing Figures 9A to 9B This serves as an example. Other examples can also be related to... Figures 9A to 9B The descriptions are different.

[0244] Figure 10 This is a flowchart of an exemplary process 1000 associated with forming the image sensor device described herein. In some embodiments, one or more semiconductor processing tools are used to perform the process. Figure 10 One or more processing blocks, wherein the semiconductor processing tool is, for example, a deposition tool, an exposure tool, a development tool, an etching tool, a planarization tool, an ion implantation tool, or an annealing tool.

[0245] like Figure 10As shown, process 1000 may include a photodiode (204) (block 1010) forming a pixel sensor in a semiconductor layer of an image sensor device. For example, as described herein, one or more semiconductor processing tools may be used to form a photodiode (e.g., photodiode 204) of a pixel sensor (e.g., color pixel sensor 106, color pixel sensor 502, color pixel sensor 504) in a semiconductor layer (e.g., substrate 202) of an image sensor device (e.g., image sensor device 100, image sensor device 500).

[0246] like Figure 10 As further shown, process 1000 may include forming a first isolation structure in a semiconductor layer such that the first isolation structure laterally surrounds the photodiode (block 1020). For example, as described herein, one or more semiconductor processing tools may be used to form the first isolation structure (e.g., isolation structure 206) in a semiconductor layer such that the first isolation structure laterally surrounds the photodiode.

[0247] like Figure 10 As further shown, process 1000 may include forming a second isolation structure over the semiconductor layer, such that the second isolation structure is located over the first isolation structure (block 1030). For example, as described herein, one or more semiconductor processing tools may be used to form the second isolation structure (e.g., isolation mesh 224) over the semiconductor layer, such that the second isolation structure is located over the first isolation structure.

[0248] like Figure 10 As further shown, process 1000 may include providing an electrochromic layer stack (234) over the second isolation structure or causing the second isolation structure to laterally surround the electrochromic layer stack (block 1040). For example, as described herein, one or more semiconductor processing tools may be used to provide an electrochromic layer stack (e.g., electrochromic layer stack 234) over the second isolation structure or to cause the second isolation structure to laterally surround the electrochromic layer stack.

[0249] Process 1000 may include other implementations, such as any single implementation or any combination of implementations in combination with one or more other processes described elsewhere herein, as described below.

[0250] In a first embodiment, process 1000 may include forming a color filter layer (e.g., color filter 230) over a photodiode, such that a second isolation structure laterally surrounds the color filter layer.

[0251] In the second embodiment, either alone or in combination with the first embodiment, the electrochromic layer stack includes forming a bottom transparent electrode (e.g., bottom transparent electrode 236) above the color filter, providing an ion storage layer (e.g., ion storage layer 238) above the bottom transparent electrode, forming an electrolyte layer (e.g., electrolyte layer 240) above the ion storage layer, providing an electrochromic layer (e.g., electrochromic layer 242) above the electrolyte layer, and providing a top transparent electrode (e.g., top transparent electrode 244) above the electrochromic layer.

[0252] In a third embodiment, either alone or in combination with one or more of the first and second embodiments, providing an electrochromic layer stack includes providing an electrochromic layer stack such that the electrochromic layers in the electrochromic layer stack have an octahedral crystal structure (e.g., crystal structure 404).

[0253] In the fourth embodiment, the electrochromic layer comprises tungsten oxide (WO6), either alone or in combination with one or more of the first to third embodiments.

[0254] In the fifth embodiment, alone or in combination with one or more of the first to fourth embodiments, providing an electrochromic layer stack includes providing an electrochromic layer stack such that a color filter is included in the electrochromic layer stack.

[0255] In the sixth embodiment, alone or in combination with one or more of the first to fifth embodiments, process 1000 includes providing another electrochromic layer stack (e.g., another electrochromic layer stack 234) over the second isolation structure.

[0256] although Figure 10 The diagram shows an example block of process 1000, but in some implementations, process 1000 includes... Figure 10 The blocks depicted in the diagram may include additional blocks, fewer blocks, different blocks, or blocks with different arrangements. Alternatively, two or more blocks of process 1000 may be executed in parallel.

[0257] In this manner, the image sensor device includes a pixel sensor array and an electrochromic layer stack above the pixel sensor array. An electrical input can be applied to the electrochromic layer stack to adjust the intensity of incident light received at the pixel sensors of the pixel sensor array. In this way, the electrochromic layer stack allows the intensity of incident light received at the pixel sensors of the pixel sensor array to be adjusted to a suitable illuminance level in the surrounding environment, and allows the intensity of incident light received at the pixel sensors of the pixel sensor array to adapt to changes in the illuminance level in the surrounding environment.

[0258] As described in more detail above, some embodiments described herein provide an image sensor device. The image sensor device includes a pixel sensor array. The pixel sensor array includes a plurality of first pixel sensors and a plurality of second pixel sensors, each second pixel sensor including a color filter. This image sensor device also includes an electrochromic layer stack located above the first plurality of pixel sensors and the second plurality of pixel sensors.

[0259] In some embodiments, the color filter of the second pixel sensor is associated with the same wavelength range of visible light. In some embodiments, the electrochromic layer stack includes an electrochromic layer, an electrolyte layer, and an ion storage layer contained between transparent electrodes of the electrochromic layer stack, wherein the electrochromic layer, electrolyte layer, ion storage layer, and transparent electrodes are disposed perpendicularly in the image sensor device. In some embodiments, the electrochromic layer stack is located above the color filter of the second pixel sensor. In some embodiments, the electrochromic layer stack includes an electrochromic layer, an electrolyte layer, and an ion storage layer contained between transparent electrodes of the electrochromic layer stack, wherein the electrochromic layer, electrolyte layer, ion storage layer, and transparent electrodes are disposed horizontally in the image sensor device. In some embodiments, the electrochromic layer stack is a first electrochromic layer stack of the image sensor device, wherein the image sensor device further includes a second electrochromic layer stack located between the first electrochromic layer stack and the photodiode of the pixel sensor in the second pixel sensor. In some embodiments, the electrochromic layer of the second electrochromic layer stack corresponds to the color filter of the pixel sensor.

[0260] As described in more detail above, some embodiments described herein provide an image sensor apparatus. The image sensor apparatus includes a first pixel sensor array and a second pixel sensor array. The first pixel sensor array includes a plurality of first pixel sensors and a plurality of second pixel sensors, each second pixel sensor including a color filter associated with a first wavelength range of visible light. The second pixel sensor array includes a plurality of third pixel sensors, each third pixel sensor including a color filter associated with the first wavelength range of visible light, and a plurality of fourth pixel sensors, each fourth pixel sensor including a color filter associated with a second wavelength range of visible light different from the first wavelength range. This image sensor apparatus also includes a first electrochromic layer stack over the plurality of first pixel sensors and the plurality of second pixel sensors. This image sensor apparatus also includes a second electrochromic layer stack over the plurality of third pixel sensors and the plurality of fourth pixel sensors.

[0261] In some embodiments, the first electrochromic layer stack is electrically coupled to a constant current source. In some embodiments, the constant current source includes one or more current mirror circuits. In some embodiments, the one or more current mirror circuits include an n-type metal-oxide-semiconductor (NMOS) current mirror circuit. In some embodiments, the one or more current mirror circuits include a p-type metal-oxide-semiconductor (PMOS) current mirror circuit electrically coupled to the NMOS current mirror circuit. In some embodiments, the image sensor device further includes an image data compression circuit coupled to the first pixel sensor array. In some embodiments, the image sensor device further includes an image data decompression circuit coupled to the first pixel sensor array.

[0262] As described in more detail above, some embodiments described herein provide a method. This method includes forming a photodiode of a pixel sensor in a semiconductor layer of an image sensor device. This method includes forming a first isolation structure in the semiconductor layer such that the first isolation structure laterally surrounds the photodiode. This method includes forming a second isolation structure above the semiconductor layer such that the second isolation structure is positioned above the first isolation structure. This method includes forming an electrochromic layer stack above the second isolation structure, or such that the second isolation structure laterally surrounds the electrochromic layer stack.

[0263] In some embodiments, the method further includes providing a color filter above a photodiode such that a second isolation structure laterally surrounds the filter. In some embodiments, providing an electrochromic layer stack includes providing a bottom transparent electrode on the color filter; disposing an ion storage layer above the bottom transparent electrode; providing an electrolyte layer above the ion storage layer; disposing an electrochromic layer above the electrolyte layer; and providing a top transparent electrode on the electrochromic layer. In some embodiments, providing an electrochromic layer stack includes providing an electrochromic layer stack such that the electrochromic layer in the electrochromic layer stack has an octahedral crystal structure. In some embodiments, the electrochromic layer comprises tungsten oxide (WO6). In some embodiments, providing an electrochromic layer stack includes providing an electrochromic layer stack such that the color filter is included in the electrochromic layer stack.

[0264] According to some embodiments, an image sensor device is provided. The image sensor device includes a pixel sensor array. The pixel sensor array includes a plurality of first pixel sensors and a plurality of second pixel sensors, each second pixel sensor including a color filter. The image sensor device also includes an electrochromic layer stack located above the first plurality of pixel sensors and the second plurality of pixel sensors. The electrochromic layer stack includes an electrochromic layer, an electrolyte layer, and an ion storage layer located between two transparent electrodes. In some embodiments, the transparent electrodes, the electrochromic layer, the electrolyte layer, and the ion storage layer are vertically disposed in the image sensor device. In some embodiments, the transparent electrodes, the electrochromic layer, the electrolyte layer, and the ion storage layer are horizontally disposed in the image sensor device.

[0265] The terms “approximately” and “substantially” can indicate that a given quantity varies within 5% of that value (e.g., ±1%, ±2%, ±3%, ±4%, ±5% of the value). These values ​​are merely illustrative and not intended to be limiting. It should be understood that, according to this disclosure, the terms “approximately” and “substantially” can refer to a percentage of the value of a given quantity.

[0266] The foregoing has outlined features of several embodiments to enable those skilled in the art to better understand various aspects of this disclosure. Those skilled in the art will understand that they can readily use this disclosure as a basis for designing or modifying other processes and structures to achieve the same purposes and / or advantages as the embodiments described herein. Those skilled in the art should also recognize that such equivalent constructions do not depart from the spirit and scope of this disclosure, and that various changes, substitutions, and modifications can be made without departing from the spirit and scope of this disclosure.

Claims

1. An image sensor device, characterized in that, include: A one-pixel sensor array, comprising: Multiple first pixel sensors; and Multiple second pixel sensors, each second pixel sensor including a color filter; and An electrochromic layer is stacked on top of the plurality of first pixel sensors and the plurality of second pixel sensors.

2. The image sensor device as claimed in claim 1, characterized in that, The color filter of the plurality of second pixel sensors is related to the same wavelength range of visible light.

3. The image sensor device as claimed in claim 1, characterized in that, The electrochromic layer stack is located above the color filter of the plurality of second pixel sensors.

4. An image sensor device, characterized in that, include: A first pixel sensor array, comprising: Multiple first pixel sensors; and A plurality of second pixel sensors, each of the second pixel sensors including a color filter, the color filter being associated with a first wavelength range of visible light; A first electrochromic layer is stacked above the plurality of first pixel sensors and the plurality of second pixel sensors; A second pixel sensor array, comprising: A plurality of third pixel sensors, each third pixel sensor including a color filter, the color filter being correlated with the first wavelength range of visible light; and A plurality of fourth pixel sensors, each of the fourth pixel sensors including a color filter associated with a second wavelength range of visible light, the second wavelength range being different from the first wavelength range; a second electrochromic layer stacked above the plurality of third pixel sensors and the plurality of fourth pixel sensors.

5. The image sensor device as claimed in claim 4, characterized in that, The first electrochromic layer stack is electrically coupled to a constant current source.

6. The image sensor device as claimed in claim 5, characterized in that, The constant current source includes one or more current mirror circuits.

7. The image sensor device as claimed in claim 6, characterized in that, The current mirror circuit or the plurality of current mirror circuits includes an n-type metal-oxide-semiconductor current mirror circuit.

8. An image sensor device, characterized in that, include: A one-pixel sensor array, comprising: Multiple first pixel sensors; and Multiple second pixel sensors, each second pixel sensor including a color filter; and An electrochromic layer stack is located above the plurality of first pixel sensors and the plurality of second pixel sensors, wherein the electrochromic layer stack includes an electrochromic layer, an electrolyte layer and an ion storage layer located between two transparent electrodes.

9. The image sensor device as claimed in claim 8, characterized in that, The two transparent electrodes, the electrochromic layer, the electrolyte layer, and the ion storage layer are vertically disposed in the image sensor device.

10. The image sensor device as claimed in claim 8, characterized in that, The two transparent electrodes, the electrochromic layer, the electrolyte layer, and the ion storage layer are horizontally disposed in the image sensor device.

Images