Dynamic optical testing device for semiconductor thin film spin coating film forming process

Abstract

The utility model belongs to optical testing equipment technical field especially relates to a kind of dynamic optical testing devices suitable for semiconductor thin film spin coating film forming process.The device includes sample module, light source module, acquisition module and control module, sample module includes material loading tray and glue spreader, material loading tray is equipped with the material loading site for bearing solution, glue spreader transmission connection is in material loading tray;Light source module includes support frame and multiple laser sources, acquisition module includes multiple signal detection receivers, the light signal of laser source emission is transferred to corresponding signal detection receiver on sample module, laser source and signal detection receiver are arranged on support frame with the axis of sample module as center, so that the light signal of multiple laser sources emission is dispersedly arranged.The above-mentioned setting makes that multiple laser sources emitted light signal between will not exist overlap or cross, optical testing function is more rich and comprehensive, and different light signals can avoid mutual interference, improves detection accuracy reliability.

Description

Technical Field

[0001] This utility model relates to the field of optical testing equipment technology, and in particular to a dynamic optical testing device suitable for the spin coating process of semiconductor thin films. Background Technology

[0002] Organic semiconductor thin films are a class of organic compound thin film materials with electrical conductivity between that of organic insulators and organic conductors. They are mainly used in the active layers of devices such as organic field-effect transistors (OFETs), organic solar cells (OSCs), organic light-emitting diodes (OLEDs), and organic sensors.

[0003] In semiconductor thin film deposition methods, spin coating is a technique that uses centrifugal force to uniformly spread a solution into a thin film by rotating a substrate at high speed. In existing technologies, in-situ characterization equipment for spin coating processes is mostly limited to single optical tests (such as interference or absorption), and the optical path design is complex, with different signals easily interfering with each other, resulting in low test accuracy.

[0004] Therefore, it is necessary to design a dynamic optical testing device suitable for the spin coating process of semiconductor thin films to solve the problems existing in the prior art. Utility Model Content

[0005] The purpose of this invention is to provide a dynamic optical testing device suitable for the spin coating process of semiconductor thin films, aiming to solve the technical problems of existing testing equipment having single function, serious signal interference, and low testing accuracy.

[0006] To achieve this objective, the present invention adopts the following technical solution:

[0007] A dynamic optical testing apparatus suitable for the spin-coating process of semiconductor thin films, including:

[0008] The sample module includes a material carrier tray and a spin coater. The material carrier tray is provided with a material loading position for carrying the solution. The spin coater is driven to the material carrier tray to drive the material loading position to rotate along the axis of the material carrier tray.

[0009] The light source module includes a support frame and multiple laser sources mounted on the support frame. The acquisition module includes multiple signal detection receivers mounted on the support frame. The laser sources and signal detection receivers are arranged in a one-to-one correspondence. The light signal emitted by the laser source is transmitted to the corresponding signal detection receiver through the sample module. The laser sources and signal detection receivers are arranged circumferentially on the support frame with the axis of the sample module as the center, so that the light signals emitted by the multiple laser sources are dispersed.

[0010] A control module is located on one side of the sample module and is signal-connected to the spin coater, the laser source, and the signal detector and receiver.

[0011] Preferably, the support frame includes a first suspension and a second suspension, the first suspension and the second suspension being staggered. At least one set of correspondingly arranged laser sources and signal detectors are arranged on the first suspension and located on both sides of the sample module axis, and at least one set of correspondingly arranged laser sources and signal detectors are arranged on the second suspension and located on both sides of the sample module axis, so that multiple laser sources and multiple signal detectors are arranged circumferentially on the support frame with the sample module axis as the center.

[0012] Preferably, the first suspension and the second suspension are arched, with the second suspension positioned below the first suspension.

[0013] Preferably, the laser source includes an interference light source exciter, a fluorescence exciter laser, and a diffuse light source exciter, and the signal detection receiver includes an interference light receiver, a fluorescence receiver, and a diffuse light receiver.

[0014] The first suspension is provided with the interference light source exciter and the interference light receiver, and the second suspension is provided with the fluorescence excitation light source laser, the diffuse light source exciter, the fluorescence receiver and the diffuse light receiver.

[0015] Preferably, the second suspension includes a suspension body and a support base, and the suspension body is provided with the diffuse light source exciter and the diffuse light receiver. The support base is respectively disposed at both ends of the suspension body, and the fluorescent excitation light source laser and the fluorescent receiver are respectively erected on the support base.

[0016] Preferably, the diffuse light source exciter is an iodine-tungsten lamp; the diffuse light receiver includes a scattering probe and a reflection probe array, and the scattered light signal and the reflected light signal emitted by the iodine-tungsten lamp can be fed back to the scattering probe and the reflection probe array respectively through the sample module.

[0017] Preferably, the acquisition module further includes:

[0018] The spectrometer integrates a CCD array, and the signal of the integrated CCD array is connected to the scattering probe, the reflection probe array, and the fluorescence receiver.

[0019] A lock-in amplifier and a source meter are provided, wherein the lock-in amplifier signal is connected to the interference light receiver, and the source meter signal is connected to the lock-in amplifier.

[0020] Preferably, a wavelength filter is integrated on the reflective probe array; and / or,

[0021] The scattering probe is connected to the integrating sphere.

[0022] Preferably, the sample module further includes a temperature control module, which is integrated into the bottom of the material tray and is signal-connected to the control module.

[0023] Preferably, the acquisition module further includes a camera module, which is mounted on the support frame and positioned directly opposite the sample module to capture and record images of the semiconductor thin film during the spin coating process in real time.

[0024] The beneficial effects of this invention are as follows: When multiple laser sources are activated simultaneously to emit light signals toward the sample module, the light signals emitted by the multiple laser sources will not overlap or cross each other on the paths to the sample module and from the sample module to the corresponding signal detector receiver. This ensures that each light signal transmission path is independent, reduces background noise, and achieves a higher signal-to-noise ratio. In addition to providing richer and more comprehensive optical testing functions, it avoids mutual interference between different light signals, thereby effectively improving the accuracy, stability, and reliability of the detection. Attached Figure Description

[0025] Figure 1 This is an overall layout diagram of the dynamic optical testing device for the spin coating process of semiconductor thin films provided by this utility model;

[0026] Figure 2 This is a top view of the optical path of the dynamic optical testing device for the spin coating process of semiconductor thin films provided by this utility model.

[0027] In the picture:

[0028] 100. Solution;

[0029] 1. Sample module; 11. Material tray; 12. Spin coater; 13. Quartz glass protective cover;

[0030] 21. Support frame; 211. First suspension; 212. Second suspension; 2121. Suspension body; 2122. Support base; 22. Interference light source exciter; 23. Fluorescent excitation light source exciter; 24. Diffuse light source exciter;

[0031] 31. Interference light receiver; 32. Fluorescence receiver; 33. Diffuse light receiver; 331. Scattering probe; 332. Reflection probe array; 333. Integrating sphere; 34. Spectrometer integrated area array CCD; 35. Lock-in amplifier; 36. Source meter; 37. Instrument rack; 38. Camera module;

[0032] 4. Control module. Detailed Implementation

[0033] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, the accompanying drawings show only the parts relevant to the present invention, not the entire structure.

[0034] In the description of this utility model, unless otherwise explicitly specified and limited, the terms "connected," "linked," and "fixed" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0035] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0036] In the description of this embodiment, the terms "upper," "lower," "right," and "left," etc., refer to the orientation or positional relationship shown in the accompanying drawings. They are used only for ease of description and simplification of operation, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model. In addition, the terms "first" and "second" are only used for distinction in description and have no special meaning.

[0037] The technical solution provided by this utility model will be described below with reference to the accompanying drawings and specific embodiments.

[0038] Combination Figures 1 to 2 As shown, this embodiment provides a dynamic optical testing device suitable for the spin coating process of semiconductor thin films. The device includes a sample module 1, a light source module, a data acquisition module, and a control module 4. The sample module 1 includes a material carrier tray 11 and a spin coater 12. The material carrier tray 11 has material loading positions for carrying the solution 100. The spin coater 12 is driven to the material carrier tray 11 to rotate the material loading positions along the axis of the material carrier tray 11. The light source module includes a support frame 21 and multiple laser sources mounted on the support frame 21. The data acquisition module includes multiple signal detectors mounted on the support frame 21. Each laser source and signal detector is correspondingly configured. The light signal emitted by the laser source is transmitted through the sample module 1 to the corresponding signal detector. The laser source and signal detector receiver are arranged circumferentially on the support frame 21 with the axis of the sample module 1 as the center, so that the light signals emitted by multiple laser sources are dispersed. The control module 4 is located on one side of the sample module 1 and is connected to the spin coater 12, the laser source and the signal detector receiver. The control module 4 can synchronously control the rotation speed of the spin coater 12 and the opening and closing of the laser source and the signal detector receiver, thereby automatically controlling the rotation speed of the spin coater 12, the laser emission and the data acquisition process, reducing random errors caused by manual operation and improving the consistency and accuracy of detection.

[0039] With the above settings, when the testing device simultaneously activates multiple laser sources to emit light signals toward the sample module 1, the light signals emitted by the multiple laser sources will not overlap or cross each other on the paths to the sample module 1 and from the sample module 1 to the corresponding signal detector receiver. This ensures that each light signal transmission path is independent, reduces background noise, and achieves a higher signal-to-noise ratio. On the basis of richer and more comprehensive optical testing functions, it avoids mutual interference between different light signals, thereby effectively improving the detection accuracy, stability, and reliability.

[0040] Specifically, in this embodiment, the sample module 1 further includes a temperature control module, which is integrated at the bottom of the material carrier tray 11 and connected to the control module 4 via a signal. This allows the control module 4 to control the evaporation rate of the solution 100 by adjusting the temperature of the material carrier tray 11 in real time. This avoids excessively rapid evaporation of the solution 100, which could lead to a rough surface on the semiconductor film, or excessively slow evaporation, which could cause uneven flow. This results in a more uniform semiconductor film thickness distribution and a more stable film thickness increase rate, leading to more accurate and reliable recording of the relationship between film thickness increase rate and changes in optical signal transmission intensity. For example, in this embodiment, the solution 100 is a perovskite MAPbI3 solution, and the temperature control range of the temperature control module is 25-150℃.

[0041] More specifically, in this embodiment, the sample module 1 also includes a quartz glass protective cover 13, which can isolate the solution 100 from splashing outward during spin coating, thereby protecting the laser source and signal detection receiver.

[0042] Specifically, in this embodiment, the support frame 21 includes a first suspension 211 and a second suspension 212, wherein the first suspension 211 and the second suspension 212 are staggered. At least one set of correspondingly arranged laser sources and signal detectors are arranged on the first suspension 211 and located on both sides of the axis of the sample module 1, and at least one set of correspondingly arranged laser sources and signal detectors are arranged on the second suspension 212 and located on both sides of the axis of the sample module 1, so that multiple laser sources and multiple signal detectors are arranged circumferentially on the support frame 21 with the axis of the sample module 1 as the center, so as to achieve the effect that the light signals emitted by multiple laser sources at the same time will not overlap or interfere with each other during the process of being transmitted to the sample module 1 and from the sample module 1 to the corresponding signal detectors.

[0043] Furthermore, the first suspension 211 and the second suspension 212 are arched, with the second suspension 212 positioned below the first suspension 211. This allows the first suspension 211 and the second suspension 212 to be separately positioned on the top of the sample module 1. This not only allows for adjustment of the misalignment angle between the first suspension 211 and the second suspension 212, but also allows for fine-tuning of the mounting positions of the laser source and signal detector receiver, which are respectively mounted on the first suspension 211 and the second suspension 212. This enables the path of the light signal emitted by the laser source to be adjusted from two aspects, effectively ensuring that the light signals emitted by different laser sources do not overlap or interfere.

[0044] For example, in this embodiment, the laser source includes an interference light source exciter 22, a fluorescence exciter 23, and a diffuse light source exciter 24, and the signal detection receiver includes an interference light receiver 31, a fluorescence receiver 32, and a diffuse light receiver 33; the first suspension 211 is provided with the interference light source exciter 22 and the interference light receiver 31, and the second suspension 212 is provided with the fluorescence exciter 23, the diffuse light source exciter 24, the fluorescence receiver 32, and the diffuse light receiver 33, so that the in-situ synchronous testing of interference, diffuse, and fluorescence signals can be integrated through the first suspension 211 and the second suspension 212, which can extend to a range of multiple types of optical testing during the semiconductor thin film deposition process and conduct a comprehensive analysis of the film dynamic mechanism. In one embodiment of this invention, the interference light source exciter 22 is a helium-neon laser, and the corresponding interference light receiver 31 is a silicon photodiode detector for real-time monitoring of film thickness changes; the fluorescence excitation light source exciter 23 is a semiconductor laser, and the corresponding fluorescence receiver 32 is a fluorescence probe for real-time acquisition of fluorescence signals; the diffuse light source exciter 24 is an iodine-tungsten lamp, and the corresponding diffuse light receiver 33 is a diffuse probe for real-time acquisition of diffuse light.

[0045] Furthermore, the second suspension 212 includes a suspension body 2121 and a support base 2122. The suspension body 2121 is equipped with a diffuse light source exciter 24 and a diffuse light receiver 33. The support base 2122 is located at both ends of the suspension body 2121, and a fluorescence exciter 23 and a fluorescence receiver 32 are respectively erected on the support base 2122. This arrangement ensures that the interference light source exciter 22, the fluorescence exciter 23, the diffuse light source exciter 24, the interference light receiver 31, the fluorescence receiver 32, and the diffuse light receiver 33 are uniformly arranged circumferentially around the sample module 1, thereby ensuring that the transmission paths of the interference light, fluorescence, and diffuse light do not overlap or interfere with each other after simultaneous emission.

[0046] It should also be noted that, since the diffuse light source exciter 24 provided in this embodiment uses an iodine-tungsten lamp, the diffuse light source exciter 24 can simultaneously emit scattered light and reflected light to the sample module 1. Accordingly, in this embodiment, the diffuse probe includes a scattering probe 331 and a reflection probe array 332. The scattered light signal emitted by the iodine-tungsten lamp can be fed back to the scattering probe 331 via the sample module 1. The surface flatness and crystal quality of the semiconductor thin film can be inferred from the scattered light information fed back to the scattering probe 331. At the same time, the emitted reflected light signal can be fed back to the reflection probe array 332 via the sample module 1. The change in the thickness of the semiconductor thin film can be determined from the intensity information of the reflected light fed back to the reflection probe array 332. Thus, the thickness, growth state, and quality of the semiconductor thin film can be evaluated more accurately, providing more comprehensive information for the testers.

[0047] Furthermore, in this embodiment, the interference light source exciter 22 is connected to a stepper motor (not shown in the figure), which is connected to the control module 4, so that the stepper motor can drive the interference light source exciter 22 to move on the first suspension 211 according to the angle between the interference light and the diffuse light and fluorescence, so as to ensure that the interference light will not overlap or cross with the fluorescence and diffuse light after it is emitted.

[0048] Furthermore, in this embodiment, a wavelength filter is integrated on the reflective probe array 332. The wavelength filter can selectively collect reflected light in a specific wavelength band, which helps to further avoid interference signals from other laser sources or background, thereby reducing the influence of external factors, ensuring more accurate measurement of reflected light, and significantly improving measurement sensitivity. For example, in this embodiment, the wavelength filter supports a spectral acquisition range of 400-1100nm.

[0049] Furthermore, in this embodiment, an integrating sphere 333 is also connected to the scattering probe 331. The integrating sphere 333 is positioned between the scattering probe 331 and the sample module 1, which enhances the signal-to-noise ratio of the weak scattering signal. Compared to the background noise, the signal-to-noise ratio of the weak scattering signal is significantly improved, thereby increasing the accuracy and reliability of the test of the scattered light emitted from the iodine-tungsten lamp. It also makes the scattering probe 331 less dependent on a specific light-receiving angle of the scattered light, resulting in a wider suitable light-receiving angle range for the scattering probe 331. This reduces the influence of the light-receiving angle on the test results, making the acquisition of the scattering signal more stable and reliable. For example, in this embodiment, the receiving angle of the scattering probe 331 is 20°-80°.

[0050] Optionally, the acquisition module provided in this embodiment further includes a spectrometer integrated CCD array 34, a lock-in amplifier 35, and a source meter 36. The spectrometer integrated CCD array 34 is connected to the scattering probe 331, the reflection probe array 332, and the fluorescence receiver 32 to integrate multi-channel optical signals, generating curves showing the changes in film thickness, phase separation, and crystallization kinetics over time, thus achieving full-spectrum dynamic recording. Preferably, in this embodiment, the spectrometer integrated CCD array 34 is provided with 8 signal ports, enabling the connection and simultaneous acquisition of up to 8 types of optical signals. The lock-in amplifier 35, the source meter 36, and the integrated CCD array 34 of the spectrometer are simultaneously integrated and mounted on the instrument rack 37. The signal of the lock-in amplifier 35 is connected to the interference light receiver 31, and the signal of the source meter 36 is connected to the lock-in amplifier 35. This allows the lock-in amplifier 35 to selectively amplify the interference light signal from the interference light receiver 31 by synchronizing with the signal of the source meter 36. While removing background noise, it retains the effective signal, which greatly improves the signal-to-noise ratio of the interference light and makes it more suitable for weak signal detection environments, thereby improving the detection sensitivity and accuracy of the interference light signal.

[0051] Optionally, in this embodiment, the acquisition module further includes a camera module 38. The camera module 38 is mounted on the support frame 21 and faces the top of the sample module 1. It can capture and record the film formation images of the semiconductor thin film during the spin coating process in real time, thereby simultaneously recording the interference light intensity, scattered light intensity, reflected light spectrum, and fluorescence spectrum. This allows the camera module 38 to combine with the spin coater 12 and the temperature control module to achieve high-precision synchronous testing of the semiconductor thin film during the dynamic film formation process. Furthermore, the two ends of the camera module 38 are respectively fixedly mounted on the first suspension 211 and the second suspension 212, so as to achieve relative fixation of the first suspension 211 and the second suspension 212 through the camera module 38, avoiding the situation where the angle between the two is offset during the test, which would lead to inaccurate test results.

[0052] In the description of this specification, references to terms such as "some embodiments," "other embodiments," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0053] Obviously, the above embodiments of this utility model are merely examples for clearly illustrating the present utility model, and are not intended to limit the implementation of the present utility model. Those skilled in the art can make various obvious changes, readjustments, and substitutions without departing from the protection scope of this utility model. It is neither necessary nor possible to exhaustively describe all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this utility model should be included within the protection scope of the claims of this utility model.

Claims

1. A dynamic optical testing device suitable for semiconductor thin film spin coating film forming process, characterized in that, include: The sample module (1) includes a material tray (11) and a spin coater (12). The material tray (11) is provided with a material loading position for carrying the solution (100). The spin coater (12) is connected to the material tray (11) to drive the material loading position to rotate along the axis of the material tray (11). The light source module includes a support frame (21) and multiple laser sources mounted on the support frame (21). The acquisition module includes multiple signal detection receivers mounted on the support frame (21). The laser sources and the signal detection receivers are arranged in a one-to-one correspondence. The light signal emitted by the laser source is transmitted to the corresponding signal detection receiver through the sample module (1). The laser sources and the signal detection receivers are arranged circumferentially on the support frame (21) with the axis of the sample module (1) as the center, so that the light signals emitted by the multiple laser sources are dispersed. The control module (4) is located on one side of the sample module (1) and is connected to the spin coater (12), the laser source and the signal detector receiver.

2. The dynamic optical testing device for semiconductor thin film spin coating process according to claim 1, characterized in that, The support frame (21) includes a first suspension (211) and a second suspension (212). The first suspension (211) and the second suspension (212) are staggered. At least one set of corresponding laser sources and signal detectors are arranged on the first suspension (211) and located on both sides of the axis of the sample module (1). At least one set of corresponding laser sources and signal detectors are arranged on the second suspension (212) and located on both sides of the axis of the sample module (1), so that multiple laser sources and multiple signal detectors are arranged circumferentially on the support frame (21) with the axis of the sample module (1) as the center.

3. The dynamic optical testing device for semiconductor thin film spin coating process according to claim 2, characterized in that, The first suspension (211) and the second suspension (212) are arched, with the second suspension (212) located below the first suspension (211).

4. The dynamic optical testing device for semiconductor thin film spin coating process according to claim 3, characterized in that, The laser source includes an interference light source exciter (22), a fluorescence exciter (23), and a diffuse light source exciter (24), and the signal detection receiver includes an interference light receiver (31), a fluorescence receiver (32), and a diffuse light receiver (33); The first suspension (211) is provided with the interference light source exciter (22) and the interference light receiver (31), and the second suspension (212) is provided with the fluorescence excitation light source exciter (23), the diffuse light source exciter (24), the fluorescence receiver (32) and the diffuse light receiver (33).

5. The dynamic optical testing device for semiconductor thin film spin coating process according to claim 4, characterized in that, The second suspension (212) includes a suspension body (2121) and a support base (2122). The suspension body (2121) is provided with the diffuse light source exciter (24) and the diffuse light receiver (33). The support base (2122) is respectively located at both ends of the suspension body (2121), and the fluorescent excitation light source exciter (23) and the fluorescent receiver (32) are respectively erected on the support base (2122).

6. The dynamic optical testing device for semiconductor thin film spin coating process according to claim 5, characterized in that, The diffuse light source exciter (24) uses an iodine-tungsten lamp; the diffuse light receiver (33) includes a scattering probe (331) and a reflection probe array (332), and the scattered light signal and the reflected light signal emitted by the iodine-tungsten lamp can be fed back to the scattering probe (331) and the reflection probe array (332) respectively through the sample module (1).

7. The dynamic optical testing device for semiconductor thin film spin coating process according to claim 6, characterized in that, The acquisition module also includes: The spectrometer is integrated with a CCD array (34), and the signal of the integrated CCD array (34) is connected to the scattering probe (331), the reflection probe array (332) and the fluorescence receiver (32); A lock-in amplifier (35) and a source meter (36) are provided, wherein the lock-in amplifier (35) is connected to the interference light receiver (31) and the source meter (36) is connected to the lock-in amplifier (35).

8. The dynamic optical testing device for semiconductor thin film spin coating process according to claim 7, characterized in that, A wavelength filter is integrated on the reflective probe array (332); and / or, The scattering probe (331) is connected to the integrating sphere (333).

9. The dynamic optical testing apparatus for the spin-coating process of semiconductor thin films according to any one of claims 1-8, characterized in that, The sample module (1) also includes a temperature control module, which is integrated at the bottom of the material tray (11) and is connected to the control module (4) via signal.

10. The dynamic optical testing apparatus for the spin-coating process of semiconductor thin films according to any one of claims 1-8, characterized in that, The acquisition module also includes a camera module (38), which is mounted on the support frame (21) and faces the sample module (1) to capture and record the film formation image of the semiconductor thin film during the spin coating process in real time.

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