Semiconductor processing apparatus and gas showerhead therefor
By designing a gas distribution plate with uneven thickness and adjusting the structural parameters of the gas spray head, the problem of uneven distribution of process gas was solved, achieving uniform substrate processing and improving product yield.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- ADVANCED MICRO FAB EQUIP INC CHINA
- Filing Date
- 2025-04-23
- Publication Date
- 2026-06-09
AI Technical Summary
In existing semiconductor processing equipment, the uneven distribution of process gases within the reaction chamber leads to uneven substrate surface treatment results, affecting product yield.
Design a gas spray head that uses a gas distribution plate with uneven thickness, where the outer area is thinner than the central area. By adjusting the thickness of the gas distribution plate and parameters such as the height, density, and angle of the through holes, the differences in process gas flow rate can be balanced to achieve uniform distribution.
By adjusting the structure of the gas distribution plate, the process gas is evenly distributed in the reaction chamber, which improves the uniformity of substrate processing and increases product yield.
Smart Images
Figure CN224343720U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to a semiconductor processing device and its gas spray head. Background Technology
[0002] In semiconductor processing equipment, process gases are introduced into the reaction chamber through a gas spray head located at the top of the reaction chamber to process the substrate. A mounting cover plate in the gas spray head and a gas distribution plate mounted on the mounting cover plate together form a gas diffusion space. The process gases from the gas source enter the gas diffusion space through the inlet channel on the mounting cover plate. After sufficient diffusion within the gas diffusion space, they finally enter the reaction chamber through multiple through-holes on the gas distribution plate, reaching the substrate surface to process the substrate.
[0003] Since the air inlet channel is usually located in the middle of the gas spray head, after the process gas enters the gas diffusion space from the air inlet channel, the distribution of the process gas in the gas diffusion space will always show a trend of more in the center and less around the periphery due to the flow characteristics of the gas itself. This will cause the gas entering the reaction chamber to also show an uneven distribution, ultimately resulting in uneven processing results on the substrate surface and a decrease in product yield.
[0004] The statements herein provide only background information relating to this invention and do not necessarily constitute prior art. Utility Model Content
[0005] The purpose of this invention is to provide a semiconductor processing device and its gas spray head, which balances the difference in process gas flow rate between the central and peripheral areas of the gas spray head entering the reaction chamber, so that the concentration of the process gas entering the reaction chamber presents a relatively uniform distribution, thereby obtaining a uniform processing result on the substrate and improving the product yield.
[0006] To achieve the above objectives, this utility model provides a gas spray head, comprising: a mounting cover plate and at least one gas distribution plate disposed vertically on the mounting cover plate, wherein a gas diffusion space is formed between the mounting cover plate and the gas distribution plate; the mounting cover plate has an air inlet channel communicating with the gas diffusion space; the gas distribution plate has multiple through holes communicating with the gas diffusion space; the gas distribution plate includes a central region and a peripheral region surrounding the central region, wherein at least one of the gas distribution plates has a non-uniform thickness, and the thickness of the peripheral region of the non-uniformly thick gas distribution plate is less than the thickness of the central region.
[0007] Optionally, the gas distribution plate includes a first gas distribution plate and a second gas distribution plate, wherein: a first gas diffusion space is formed between the first gas distribution plate and the mounting cover plate; the first gas distribution plate has multiple through holes; the thickness of the first gas distribution plate is uneven, and the thickness of the outer region of the first gas distribution plate is less than the thickness of the central region; the second gas distribution plate is located below the first gas distribution plate; a second gas diffusion space is formed between the second gas distribution plate and the first gas distribution plate; the second gas distribution plate has multiple through holes.
[0008] Optionally, the thickness of the second gas distribution plate is not uniform, with the thickness of the outer region of the second gas distribution plate being less than the thickness of the central region.
[0009] Optionally, the air intake channel is located in the central area of the mounting cover plate, and the thickness of the gas distribution plate with uneven thickness gradually decreases along a first direction, which is defined as: starting from the edge of the central area of the gas distribution plate, moving towards the peripheral area, until the edge of the gas distribution plate.
[0010] Optionally, the area of the central region of the gas distribution plate with uneven thickness accounts for 0% to 35% of the total area of the gas distribution plate, and the area of the outer region accounts for 65% to 100% of the total area of the gas distribution plate. The height of the through holes on the outer region of the gas distribution plate gradually decreases along the first direction, and the decrease in height between adjacent through holes in the first direction is 5% to 50%.
[0011] Optionally, the lower surface of the outer region of the gas distribution plate with uneven thickness is an inclined surface, and the angle between the inclined surface and the horizontal plane is no greater than 15°.
[0012] Optionally, the lower surface of the peripheral region of the gas distribution plate with uneven thickness is a stepped surface, and in the first direction, the height between adjacent steps decreases by 5% to 50%.
[0013] Optionally, the airflow rate of the through holes in the central region of the gas distribution plate is less than the airflow rate of the through holes in the peripheral region of the gas distribution plate.
[0014] Optionally, the distribution density of through holes in the central region of the gas distribution plate is less than the distribution density of through holes in the peripheral region of the gas distribution plate.
[0015] Optionally, the through holes on the outer periphery of the gas distribution plate are inclined, and the angle between the axial direction of the through hole and the vertical direction in the clockwise direction is not greater than 15°.
[0016] This utility model also provides a semiconductor processing device, comprising: a reaction chamber; a gas spray head as in any of the above embodiments, disposed at the top of the reaction chamber; and a base disposed inside the reaction chamber, opposite to the gas spray head, the base being used to support a substrate.
[0017] This invention adjusts the thickness of the gas distribution plate in different regions according to the gas concentration distribution. Since the concentration of process gas in the central region of the gas diffusion space is greater than that in the outer region, the thickness of the outer region of the gas distribution plate is set to be less than that in the central region. This shortens the height of the through-holes in the outer region of the gas distribution plate, reduces the flow resistance of gas flowing through the through-holes, and increases the flow rate of process gas entering the reaction space through the outer region per unit time. This balances the difference in process gas flow rate between the central and outer regions of the gas distribution plate, resulting in a relatively uniform distribution of process gas concentration in the reaction space between the central and outer regions. This achieves uniform processing of the substrate and improves product yield. Attached Figure Description
[0018] Figure 1 This is a schematic diagram of the structure of a semiconductor processing device provided by this utility model and a gas spray head provided in the first embodiment.
[0019] Figure 2 This is a schematic diagram of the structure of a gas spray head provided in the second embodiment.
[0020] Figure 3 This is a schematic diagram of the gas distribution plate in one embodiment.
[0021] Figure 4 This is a schematic diagram of the gas distribution plate in another embodiment.
[0022] Figure 5 This is a schematic diagram of the structure of a gas spray head provided in the third embodiment. Detailed Implementation
[0023] The following is based on Figures 1-5 The preferred embodiments of this utility model will be described in detail below.
[0024] like Figure 1 As shown, this utility model provides a semiconductor processing device, including a reaction chamber 1. The reaction chamber 1 has a gas spray head 2 and a base 3 arranged opposite to each other. The gas spray head 2 is installed on the top of the reaction chamber 1, and the base 3 is located below the gas spray head 2. The base 3 supports a substrate W, and a reaction space 4 is formed between the gas spray head 2 and the base 3.
[0025] In the first embodiment, as Figure 1As shown, the gas spray head 2 includes a mounting cover plate 21 and a first gas distribution plate 22 vertically disposed on the mounting cover plate 21, forming a gas diffusion space 23 between the mounting cover plate 21 and the first gas distribution plate 22. The mounting cover plate 21 is provided with an air inlet channel 211, one end of which is connected to a process gas source (not shown in the figure), and the other end is connected to the gas diffusion space 23. The first gas distribution plate 22 has multiple through holes 221, one end of which is connected to the gas diffusion space 23, and the other end is connected to the reaction space 4. Process gas from the process gas source enters the gas diffusion space 23 through the air inlet channel 211. Due to thermal motion, the process gas migrates from a high concentration area to a low concentration area within the gas diffusion space 23, and finally enters the reaction space 4 through the through holes 221 to process the substrate W.
[0026] Since the air intake channel 211 is usually located in the central area of the mounting cover plate 21, after the process gas enters the gas diffusion space 23 through the air intake channel 211, the process gas migrates and diffuses from the central area of the gas diffusion space 23 to the outer area. Before the process gas in the gas diffusion space 23 has been fully diffused and uniformly distributed, the process gas has already entered the reaction space 4 through the through hole 221 on the first gas distribution plate 22. This results in the gas concentration in the central area of the gas diffusion space 23 being greater than the gas concentration in the outer area. Consequently, the concentration of the process gas entering the reaction space 4 also shows a distribution pattern where the concentration in the central area is greater than the concentration in the outer area. Ultimately, this leads to uneven surface treatment of the substrate W, resulting in a decrease in product yield.
[0027] To solve this problem, the present invention sets the thickness of the first gas distribution plate 22 to be non-uniformly distributed, such as... Figure 1As shown, the first gas distribution plate 22 includes a central region 222 and a peripheral region 223 surrounding the central region 222. The through hole located in the central region 222 is a first through hole 2211, and the through hole located in the peripheral region 223 is a second through hole 2212. The thickness of the peripheral region 223 is less than the thickness of the central region 222. In this embodiment, the thickness of the first gas distribution plate 22 in different regions is adjusted according to the gas concentration distribution. The concentration of process gas in the central region of the gas diffusion space 23 is greater than that in the outer region. Therefore, the thickness of the outer region 223 of the first gas distribution plate 22 is set to be less than that of the central region 222. This shortens the height of the second through hole 2212 on the outer region 223 of the first gas distribution plate 22, reduces the flow resistance of gas flowing through the second through hole 2212 on the outer region 223, and increases the flow rate of process gas entering the reaction space 4 through the outer region 223 per unit time. This balances the difference in flow rate of process gas entering the reaction space 4 from the central region 222 and the outer region 223 of the first gas distribution plate 22. Consequently, the concentration of process gas entering the reaction space 4 also exhibits a relatively uniform distribution pattern between the central region and the outer region, thereby obtaining a uniform processing result for the substrate W and improving the product yield.
[0028] like Figure 2 As shown, in the second embodiment, the gas spray head 2 includes a first gas distribution plate 22 and a second gas distribution plate 24. Figure 1 Based on the structure of the gas spray head of the first embodiment shown, this embodiment adds a second gas distribution plate 24 below the first gas distribution plate 22. The second gas distribution plate 24 has multiple through holes 241. A first gas diffusion space 231 is formed between the first gas distribution plate 22 and the mounting cover plate 21, and the first gas diffusion space 231 communicates with the air inlet channel 211 and the through holes 221 on the first gas distribution plate 22. A second gas diffusion space 232 is formed between the second gas distribution plate 24 and the first gas distribution plate 22, and the second gas diffusion space 232 communicates with the through holes 221 on the first gas distribution plate 22 and the through holes 241 on the second gas distribution plate 24.
[0029] Compared to the previous embodiment, in this embodiment, only the thickness of the first gas distribution plate 22 in different regions is changed according to the gas concentration distribution pattern, while the second gas distribution plate 24 is uniformly distributed. The effect of the first gas distribution plate 22 is the same as in the previous embodiment, balancing the difference in process gas flow rate between the central region 222 and the peripheral region 223 of the first gas distribution plate 22 when entering the second gas diffusion space 232, resulting in a relatively uniform concentration distribution of the process gas entering the second gas diffusion space 232 between the central and peripheral regions. Furthermore, this embodiment adds a second gas distribution plate 24 to form a two-layer gas distribution structure of the first gas diffusion space 231 and the second gas diffusion space 232. After the process gas passes through the first gas distribution plate 22 with its uneven thickness and enters the second gas diffusion space 232, it continues to diffuse uniformly within the second gas diffusion space 232, thereby making the concentration distribution of the process gas that finally enters the reaction space 4 after passing through the second gas distribution plate 24 more uniform, achieving a uniform processing result on the substrate W and improving product yield.
[0030] like Figure 1 and Figure 2 As shown, direction A is defined as: starting from the edge of the central region 222 of the first gas distribution plate 22, moving towards the peripheral region 223, until the edge of the first gas distribution plate 22. Due to the inherent flow characteristics of the gas, the process gas enters the gas diffusion space 23 through the inlet channel 211. Figure 1 ) or the first gas diffusion space 231 ( Figure 2 Afterwards, the gas gradually diffuses from the central region of the gas diffusion space 23 (or the first gas diffusion space 231) towards the outer region. The closer to the inlet channel 211, the higher the concentration of the process gas; the farther from the inlet channel 211, the lower the concentration of the process gas. Along direction A, the concentration gradually decreases as the distance gradually increases. It can be seen that within the gas diffusion space 23 (or the first gas diffusion space 231), the concentration of the process gas gradually decreases from the central region to the outer region, rather than decreasing abruptly. Therefore, in order to match this concentration reduction distribution, the thickness of the first gas distribution plate 22 is set to gradually decrease from the central region 222 to the outer region 223, thereby gradually shortening the height of the second through hole 2212 located on the outer region 223 of the first gas distribution plate 22, and better balancing the difference in process gas flow rate entering the reaction space 4 (or the second gas diffusion space 232) from the central region 222 and the outer region 223 of the first gas distribution plate 22.
[0031] Specifically, the area of the central region 222 of the first gas distribution plate 22 accounts for 0% to 35% of the total area of the gas distribution plate, while the area of the outer region 223 accounts for 65% to 100% of the total area of the gas distribution plate. When the area of the central region 222 accounts for 0%, the area of the outer region 223 accounts for 100%. In this case, the central region 222 is confined to a single point, and the thickness of the first gas distribution plate 22 gradually decreases from the center point along direction A. That is, the height of all through holes 221 on the entire first gas distribution plate 22 gradually decreases. This situation is suitable for situations where the gas spray head is larger, and a better gas equalization effect can be obtained. When the area of the central region 222 increases to 35%, the area of the outer region 223 decreases to 65%. This situation is suitable for situations where the gas spray head is smaller. By reasonably setting the proportions of the central region 222 and the outer region 223, it can accommodate gas spray heads of different sizes, thus making it suitable for reaction chambers of different sizes, and has strong applicability.
[0032] Furthermore, the thickness of the first gas distribution plate 22 is limited to gradually decrease along direction A, so that the height of the second through hole 2212 on the outer region 223 of the first gas distribution plate 22 gradually decreases along direction A. In direction A, the decrease in height between adjacent second through holes 2212 is set to 5% to 50%. If the size of the gas spray head 2 is small, the decrease in thickness of the first gas distribution plate 22 is large, and the decrease in height of the second through hole 2212 along direction A is also correspondingly large. If the size of the gas spray head 2 is large, the decrease in thickness of the first gas distribution plate 22 is small, and the decrease in height of the second through hole 2212 along direction A is also correspondingly small.
[0033] In the first embodiment of this utility model, as Figure 1 As shown, the lower surface 2231 of the outer region 223 of the first gas distribution plate 22 is an inclined surface, and the angle α between the inclined surface and the horizontal plane is no greater than 15°, so that the height reduction between adjacent second through holes 2212 on the outer region 223 can reach 5% to 50%. The inclined surface is easy to process and the processing process is easy to control. Using the inclined surface to achieve the thickness reduction of the first gas distribution plate 22 can reasonably control the processing cost.
[0034] In one embodiment of this utility model, such as Figure 3As shown, the lower surface 2231 of the outer region 223 of the first gas distribution plate 22 is a stepped surface. Each step is provided with a second through hole 2212. In direction A, the height reduction between adjacent steps is 5% to 50%, so that the height reduction between adjacent second through holes 2212 on the outer region 223 can reach 5% to 50%. The stepped surface is not difficult to process and is relatively easy to implement, and the processing cost can be controlled at a low level.
[0035] In addition to achieving uniform gas distribution by changing the height of the through holes on the gas distribution plate, a more uniform airflow distribution can be further achieved by adjusting the airflow volume, distribution density, and tilt angle of the through holes in different areas of the gas distribution plate.
[0036] For example, in some embodiments of this utility model, the diameter of the first through hole 2211 on the central region 222 of the first gas distribution plate 22 can be made smaller than the diameter of the second through hole 2212 on the peripheral region 223, thereby making the air passage of the first through hole 2211 less than the air passage of the second through hole 2212. Because the process gas in the gas diffusion space 23 ( Figure 1 ) or the first gas diffusion space 231 ( Figure 2 The concentration in the central region of the first gas distribution plate 22 is greater than that in the outer region. By reducing the ventilation volume of the first through hole 2211 on the central region 222 of the first gas distribution plate 22, the flow resistance of the gas flowing through the first through hole 2211 is increased, thereby reducing the flow rate of the process gas entering the reaction space 4 (or the second gas diffusion space 232) through the central region 222 per unit time. Conversely, by increasing the ventilation volume of the second through hole 2212 on the outer region 223 of the first gas distribution plate 22, the flow resistance of the gas flowing through the second through hole 2212 is reduced, thereby increasing the flow rate of the process gas entering the reaction space 4 (or the second gas diffusion space 232) through the outer region 223 per unit time. This can better balance the difference in the flow rate of the process gas entering the reaction space 4 (or the second gas diffusion space 232) from the central region 222 and the outer region 223 of the first gas distribution plate 22.
[0037] In some other embodiments, the distribution density of the first through holes 2211 on the central region 222 of the first gas distribution plate 22 is made smaller than the distribution density of the second through holes 2212 on the peripheral region 223. This is because the process gas diffuses in the gas diffusion space 23 ( Figure 1 ) or the first gas diffusion space 231 ( Figure 2The concentration in the central region of the first gas distribution plate 22 is greater than that in the outer region. By reducing the distribution density of the first through holes 2211 on the central region 222 of the first gas distribution plate 22, the flow rate of process gas entering the reaction space 4 (or the second gas diffusion space 232) through the central region 222 per unit time is reduced. Conversely, by increasing the distribution density of the second through holes 2212 on the outer region 223 of the first gas distribution plate 22, the flow rate of process gas entering the reaction space 4 (or the second gas diffusion space 232) through the outer region 223 per unit time is increased. This balances the difference in the flow rate of process gas entering the reaction space 4 (or the second gas diffusion space 232) from the central region 222 and the outer region 223 of the first gas distribution plate 22.
[0038] In another embodiment, such as Figure 4 As shown, the second through hole 2212 on the outer periphery region 223 of the first gas distribution plate 22 is inclined, such that the angle β between the axial direction of the second through hole 2212 and the vertical direction in the clockwise direction is not greater than 15°. Because the process gas in the gas diffusion space 23 ( Figure 1 ) or the first gas diffusion space 231 ( Figure 2 The concentration in the central region of the first gas distribution plate 22 is greater than that in the outer region. By tilting the second through hole 2212 on the outer region 223 so that the axis of the second through hole 2212 is approximately parallel to the gas flow direction, the flow resistance of gas flowing into the second through hole 2212 is reduced, thereby increasing the flow rate of process gas entering the reaction space 4 (or the second gas diffusion space 232) through the outer region 223 per unit time. This can better balance the difference in process gas flow rate between the central region 222 and the outer region 223 of the first gas distribution plate 22.
[0039] like Figure 5 As shown, in the third embodiment, in Figure 2 Based on the structure of the gas spray head shown, the thickness of the second gas distribution plate 24 is also set to be non-uniformly distributed. The second gas distribution plate 24 includes a central region 242 and a peripheral region 243 surrounding the central region 242. The through hole located on the central region 242 is the third through hole 2411, and the through hole located on the peripheral region 243 is the fourth through hole 2412. The thickness of the peripheral region 243 is made smaller than the thickness of the central region 242.
[0040] In this embodiment, the thickness of the gas distribution plate is adjusted according to the gas concentration distribution. The concentration of the process gas in the central region of the first gas diffusion space 231 is greater than that in the outer region. Therefore, the thickness of the outer region 223 of the first gas distribution plate 22 is set to be less than that of the central region 222. This shortens the height of the first through hole 221 on the outer region 223 of the first gas distribution plate 22, reduces the flow resistance of the gas flowing through the first through hole 221 on the outer region 223, increases the flow rate of the process gas entering the second gas diffusion space 232 through the outer region 223 per unit time, and enhances the uniformity of the process gas concentration.
[0041] Based on this, the thickness of the outer region 243 of the second gas distribution plate 24 is set to be less than the thickness of the central region 242, thereby shortening the height of the fourth through hole 2412 on the outer region 243 of the second gas distribution plate 24, reducing the flow resistance of gas flowing through the fourth through hole 2412 on the outer region 243, and increasing the flow rate of process gas entering the reaction space 4 through the outer region 243 per unit time, so as to balance the difference in process gas flow rate between the central region 242 and the outer region 243 of the second gas distribution plate 24, and further enhance the uniformity of process gas concentration.
[0042] Similarly, as with the first gas distribution plate 22, direction B is defined as: starting from the edge of the central region 242 of the second gas distribution plate 24, moving towards the outer region 243, and ending at the edge of the second gas distribution plate 24. The thickness of the second gas distribution plate 24 is gradually reduced along direction B, thereby gradually reducing the flow resistance of the second gas distribution plate 24 along direction B and gradually increasing the flow rate of process gas entering the reaction space 4 through the outer region 223 per unit time. This better balances the differences in process gas flow rates entering the reaction space 4, resulting in a more uniform distribution of process gas concentration, ultimately achieving a uniform processing result for the substrate W and improving product yield.
[0043] The central region 242 of the second gas distribution plate 24 accounts for 0% to 35% of the total area of the gas distribution plate, while the outer region 243 accounts for 65% to 100% of the total area of the gas distribution plate. By reasonably setting the proportions of the central region 242 and the outer region 243, it can accommodate gas spray heads of different sizes, thus making it applicable to reaction chambers of different sizes and exhibiting strong applicability.
[0044] Similarly, the thickness of the second gas distribution plate 24 is limited to gradually decrease along direction B, so that the height of the fourth through hole 2412 on the outer region 243 of the second gas distribution plate 24 gradually decreases along direction B. In direction B, the decrease in height between adjacent fourth through holes 2412 is 5% to 50%.
[0045] Similar to the first gas distribution plate 22, the lower surface of the outer region 243 of the second gas distribution plate 24 can also be processed into an inclined surface or a stepped surface, so that the height reduction between adjacent fourth through holes 2412 on the outer region 243 can reach 5% to 50%. In addition, the air volume, distribution density and tilt angle of the through holes in different regions of the second gas distribution plate 24 can be adjusted to achieve a more uniform airflow distribution, which will not be elaborated here.
[0046] This invention adjusts the thickness of the gas distribution plate in different regions according to the gas concentration distribution. Since the concentration of process gas in the central region of the gas diffusion space is greater than that in the outer region, the thickness of the outer region of the gas distribution plate is set to be less than that in the central region. This shortens the height of the through-holes in the outer region of the gas distribution plate, reduces the flow resistance of gas flowing through the through-holes, and increases the flow rate of process gas entering the reaction space through the outer region per unit time. This balances the difference in process gas flow rate between the central and outer regions of the gas distribution plate, resulting in a relatively uniform distribution of process gas concentration in the reaction space between the central and outer regions. This achieves uniform processing of the substrate and improves product yield.
[0047] It should be noted that, in the embodiments of this utility model, the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential," etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings and are only for the convenience of describing the embodiments. They do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.
[0048] In this utility model, unless otherwise explicitly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances.
[0049] It should be understood that, when used in this specification and the appended claims, the term "comprising" indicates the presence of the described feature, integral, step, operation, element and / or component, but does not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components and / or collections thereof.
[0050] It should also be understood that the terminology used in this specification is for the purpose of describing particular embodiments only and is not intended to limit the scope of the application. As used in this specification and the appended claims, the singular forms “a,” “an,” and “the” are intended to include the plural forms unless the context clearly indicates otherwise.
[0051] It should also be further understood that the term “and / or” as used in this application specification and the appended claims means any combination of one or more of the associated listed items and all possible combinations, and includes such combinations.
[0052] As used in this specification and the appended claims, the term "if" may be interpreted, depending on the context, as "when," "once," "in response to determination," or "in response to detection." Similarly, the phrases "if determined" or "if [described condition or event] is detected" may be interpreted, depending on the context, as "once determined," "in response to determination," "once [described condition or event] is detected," or "in response to detection of [described condition or event]."
[0053] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without inventive effort are within the scope of protection of the present invention. After reading the above content, various modifications and substitutions to the present invention will be obvious to those skilled in the art. Therefore, the scope of protection of the present invention should be defined by the appended claims.
Claims
1. A gas spray head, characterized in that, Includes: a mounting cover plate and at least one gas distribution plate disposed on the mounting cover plate in a vertical direction, wherein a gas diffusion space is formed between the mounting cover plate and the gas distribution plate; The mounting cover has an air intake channel, which is connected to the gas diffusion space; The gas distribution plate has multiple through holes, which are connected to the gas diffusion space. The gas distribution plate includes a central region and a peripheral region surrounding the central region. At least one of the gas distribution plates has a non-uniform thickness, and the thickness of the peripheral region of the non-uniformly thick gas distribution plate is less than the thickness of the central region.
2. The gas spray head as described in claim 1, characterized in that, The gas distribution plate includes a first gas distribution plate and a second gas distribution plate, wherein: A first gas diffusion space is formed between the first gas distribution plate and the mounting cover plate. The first gas distribution plate has multiple through holes. The thickness of the first gas distribution plate is uneven, with the thickness of the outer region of the first gas distribution plate being less than the thickness of the central region. The second gas distribution plate is located below the first gas distribution plate, and a second gas diffusion space is formed between the second gas distribution plate and the first gas distribution plate. The second gas distribution plate has multiple through holes.
3. The gas spray head as described in claim 2, characterized in that, The thickness of the second gas distribution plate is uneven, with the thickness of the outer region of the second gas distribution plate being less than that of the central region.
4. The gas spray head as described in any one of claims 1-3, characterized in that, The air intake channel is located in the central area of the mounting cover plate, and the thickness of the gas distribution plate with uneven thickness gradually decreases along a first direction. The first direction is defined as: starting from the edge of the central area of the gas distribution plate, moving towards the peripheral area, until the edge of the gas distribution plate.
5. The gas spray head as described in claim 4, characterized in that, The central region of the gas distribution plate with uneven thickness accounts for 0% to 35% of the total area of the gas distribution plate, and the peripheral region accounts for 65% to 100% of the total area of the gas distribution plate. The height of the through holes on the peripheral region of the gas distribution plate gradually decreases along the first direction, and the decrease in height between adjacent through holes is 5% to 50% in the first direction.
6. The gas spray head as described in claim 5, characterized in that, The lower surface of the outer region of the gas distribution plate with uneven thickness is an inclined surface, and the angle between the inclined surface and the horizontal plane is no greater than 15°.
7. The gas spray head as described in claim 5, characterized in that, The lower surface of the outer region of the gas distribution plate with uneven thickness is a stepped surface, and in the first direction, the height between adjacent steps decreases by 5% to 50%.
8. The gas spray head as described in claim 4, characterized in that, The airflow rate of the through holes in the central region of the gas distribution plate is less than that of the through holes in the peripheral region of the gas distribution plate.
9. The gas spray head as described in claim 4, characterized in that, The distribution density of through holes in the central region of the gas distribution plate is less than the distribution density of through holes in the peripheral region of the gas distribution plate.
10. The gas spray head as described in claim 4, characterized in that, The through holes on the outer periphery of the gas distribution plate are inclined, and the angle between the axial direction of the through holes and the vertical direction in the clockwise direction is no greater than 15°.
11. A semiconductor processing apparatus, characterized in that, Include: reaction chamber; The gas spray head as described in any one of claims 1-10 is disposed at the top of the reaction chamber; A base is disposed inside the reaction chamber, opposite to the gas spray head, and the base is used to support the substrate.